JPH11316976A - Phase transition recording medium - Google Patents
Phase transition recording mediumInfo
- Publication number
- JPH11316976A JPH11316976A JP10300612A JP30061298A JPH11316976A JP H11316976 A JPH11316976 A JP H11316976A JP 10300612 A JP10300612 A JP 10300612A JP 30061298 A JP30061298 A JP 30061298A JP H11316976 A JPH11316976 A JP H11316976A
- Authority
- JP
- Japan
- Prior art keywords
- recording medium
- layer
- recording
- phase change
- phase transition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は相変化記録媒体に関
する。詳しくは記録層として相変化形の記録層を用いた
光記録媒体に関する。The present invention relates to a phase change recording medium. More specifically, the present invention relates to an optical recording medium using a phase-change recording layer as a recording layer.
【０００２】[0002]
【従来の技術】相変化記録媒体はレーザービームによる
加熱により媒体の結晶相が変化する（例えば、結晶→ア
モルファス）効果を用いて情報を記録し、各結晶相の光
反射率の違いから情報を読み出すことができる。相変化
記録媒体には書き込み可能型（ライトワンス型）と書き
換え可能型（イレーザブル型）の両方があり、近年進歩
の著しい記録媒体である。相変化記録媒体のキャリアレ
ベル（ＣＬ）は記録状態と消去状態の光反射率のコント
ラストが違うほど大きくなる。コントラストを上げる為
に記録層を薄くし、その下に反射層を設け光の干渉効果
を利用する方式が提案されている（例えば昭和６２年秋
季応用物理学会１８ｐ−ＺＰ−１２）。2. Description of the Related Art In a phase change recording medium, information is recorded using an effect in which the crystal phase of the medium changes (for example, from crystal to amorphous) by heating with a laser beam, and the information is recorded based on the difference in the light reflectance of each crystal phase. Can be read. The phase change recording medium includes both a writable type (write-once type) and a rewritable type (erasable type), and is a recording medium with remarkable progress in recent years. The carrier level (CL) of the phase change recording medium increases as the contrast of the light reflectance between the recorded state and the erased state increases. There has been proposed a method in which a recording layer is thinned in order to increase contrast, and a reflective layer is provided thereunder to utilize the interference effect of light (for example, Autumn Applied Physics Society of Japan, 1987, 18p-ZP-12).
【０００３】[0003]
【発明が解決しようとする課題】干渉効果を強く出すに
は反射層の光反射率を高くする必要があるが、反射率の
高い物質（例えば、Ａｕ，Ａｇ，Ｃｕ，Ａｌ等）を用い
ると、一般に熱伝導度が大きく感度の低下をもたらす。In order to enhance the interference effect, it is necessary to increase the light reflectance of the reflection layer. However, if a material having a high reflectance (eg, Au, Ag, Cu, Al, etc.) is used. In general, the thermal conductivity is large and the sensitivity is lowered.
【０００４】[0004]
【課題を解決するための手段】本発明者等は上述の欠点
を克服した高コントラスト、高感度の相変化記録媒体を
提供することを目的に鋭意検討した結果、本発明に到達
したものである。すなわち本発明の要旨は、ポリカーボ
ネート基板上に誘電体層を介して設けられた記録層の結
晶状態を熱的に変化させて光反射率を変えることにより
記録を行なう相変化記録媒体において、記録層上に反射
層を設けてなり、該反射層をＡｌ 1-x Ｍx （ＭはＴａ，
Ｔｉ，Ｚｒ，Ｖ，Ｐｔ，Ｍｏ，Ｃｒから選ばれる少なく
とも１種の元素、ｘは０．０１〜０．１５の数）によっ
て形成したことを特徴とする相変化記録媒体に存する。SUMMARY OF THE INVENTION The present inventors have identified the above-mentioned drawbacks.
High-contrast, high-sensitivity phase change recording medium
As a result of intensive studies aimed at providing
It was done. That is, the gist of the present invention is
Of the recording layer provided on the substrate through a dielectric layer
By changing the crystal state thermally and changing the light reflectance
Reflection on the recording layer in the recording phase change recording medium
A reflective layer, 1-xMx(M is Ta,
Ti, Zr, V, Pt, Mo, Cr
And x is a number from 0.01 to 0.15).
A phase change recording medium characterized by being formed by:
【０００５】[0005]
【発明の実施の形態】以下、本発明を更に詳細に説明す
る。本発明による相変化形光記録媒体は、真空蒸着やス
パッタリングなど通常の薄膜形成装置により作成され
る。基板としては、低熱伝導性材料であるＰＣ（ポリカ
ーボネート）が該基板への熱の散逸を防ぐ目的から用い
られる。基板の厚みは１〜２ｍｍ程度が一般的であり、
通常約１．２ｍｍ程度である。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described below in more detail. The phase-change optical recording medium according to the present invention is produced by a normal thin film forming apparatus such as vacuum evaporation or sputtering. As the substrate, PC (polycarbonate), which is a low thermal conductive material, is used for the purpose of preventing heat from dissipating to the substrate. The thickness of the substrate is generally about 1 to 2 mm,
Usually, it is about 1.2 mm.
【０００６】本発明においては基板上に誘電体層、記録
層、反射層を順次設ける。記録層としてはＧｅＴｅ系、
ＩｎＳｂ系、ＴｅＯ2 系等が用いられる。記録層の膜厚
は記録前、記録後の屈折率、及び反射層の屈折率から最
もコントラストがとれるように最適化されるが、通常２
００Å〜６００Åである。本発明においては反射層とし
てＴａ，Ｔｉ，Ｚｒ，Ｖ，Ｐｔ，Ｍｏ，Ｃｒから選ばれ
る一種以上の元素を含有するＡｌ合金を用いる。添加金
属の含有量は１〜１５ａｔ％（原子％）、さらに好まし
くは２〜１０ａｔ％である。好ましい添加金属は上記の
うち、Ｔａ，Ｔｉ，Ｚｒである。反射層の膜厚は反射率
が低下せず、しかも感度が著しく低下しない範囲で選ば
れるが、３００Å〜５００Å程度が好ましい。干渉効果
をさらに強める為記録層の基板側に接して高屈折率の誘
電体を設ける。また、さらに、記録層の反射層側に接し
て高屈折率の誘電体を設ければより効果的である。誘電
体としては例えば、ＺｎＳ，Ｔａ2 Ｏ5 ，ＳｉＯ2 ，Ｓ
ｉＯ，ＺｒＯ2 ，Ｓｉ3 Ｎ 4 ，ＡｌＮ等が用いられる。
尚、誘電体を記録層の片面または両面に設ける場合は記
録層の膜厚は誘電体を含めた全体の干渉効果によって決
定される。In the present invention, a dielectric layer is formed on a substrate,
A layer and a reflective layer are sequentially provided. GeTe based recording layer,
InSb system, TeOTwoA system or the like is used. Recording layer thickness
Is the maximum from the refractive index before and after recording and the refractive index of the reflective layer.
Is also optimized for contrast, but usually 2
00-600 °. In the present invention, the reflective layer
Selected from Ta, Ti, Zr, V, Pt, Mo, Cr
An Al alloy containing one or more elements is used. Additive
The content of the genus is 1 to 15 at% (atomic%), more preferably
Or 2 to 10 at%. Preferred additive metals are
Of these, Ta, Ti, and Zr. Reflectivity is the thickness of the reflective layer
Is selected as long as the sensitivity does not decrease and the sensitivity does not decrease significantly.
However, about 300-500 ° is preferable. Interference effect
In order to further enhance the
An electric body is provided. Further, the recording layer contacts the reflective layer side of the recording layer.
It is more effective to provide a dielectric material having a high refractive index. dielectric
As a body, for example, ZnS, TaTwoOFive, SiOTwo, S
iO, ZrOTwo, SiThreeN Four, AlN, etc. are used.
If a dielectric is provided on one or both sides of the recording layer, the
The thickness of the recording layer is determined by the overall interference effect including the dielectric.
Is determined.
【０００７】[0007]
【実施例】以下、実施例に基づいて本発明を具体的に説
明するが本発明はその要旨を越えない限り以下の実施例
に限定されない。EXAMPLES Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited to the following examples unless it exceeds the gist.
【０００８】実施例１ 基板にはポリカーボネートのディスクを用いその上にＲ
Ｆスパッタリング法により、ＳｉＯ2 層を１０００Å成
膜した。その上に記録層としてＧｅターゲット上にＴ
ｅ，Ｂｉチップを配値してスパッタリングにより形成し
た。成膜速度は１０Å／ｓｅｃとし、４００Åの膜厚に
成膜した。記録層の組成はＧｅ50Ｔｅ50Ｂｉ3 であっ
た。次に反射層として、Ａｌターゲット上にＴａチップ
を配して３００ÅのＡｌとＴａの合金を成膜した。反射
層中のＴａ量はＴａチップ数によって調整した。また比
較例としてＡｌのみの反射層を持つ同様のディスクを作
成した。Example 1 A polycarbonate disk was used as a substrate, and R
An SiO 2 layer was formed to a thickness of 1000 ° by the F sputtering method. A recording layer is formed on the Ge target as a recording layer.
e, Bi chips were arranged and formed by sputtering. The film formation rate was 10 ° / sec, and the film was formed to a thickness of 400 °. The composition of the recording layer was Ge 50 Te 50 Bi 3 . Next, a Ta chip was arranged on an Al target to form an alloy of 300 ° Al and Ta as a reflective layer. The amount of Ta in the reflective layer was adjusted by the number of Ta chips. As a comparative example, a similar disk having a reflective layer made of only Al was prepared.
【０００９】以上のように作成したディスクに１８００
ｒｐｍ、０．５ＭＨｚ ｄｕｔｙ５０％の条件で記録を
行なったところ、図１のような結果を得た。なお、最適
記録パワーは２次歪Ｃ2 とキャリアレベルＣの比Ｃ2 ／
Ｃが最小になる記録パワーとした。図１から明らかなよ
うにＡｌにＴａを少量添加することによりキャリアレベ
ルを低下させずに感度を上げることが可能である。同様
な効果はＡｌとＴａ以外にＡｌとＴｉ，Ｚｒ，Ｖ，Ｐ
ｔ，Ｍｏ，Ｃｒ等との合金を用いた場合においても認め
られた。[0009] 1800 is added to the disc created as described above.
When recording was performed under the conditions of rpm and 0.5 MHz duty 50%, the result as shown in FIG. 1 was obtained. The optimum recording power secondary distortion C 2 and the ratio of carrier level C C 2 /
The recording power at which C was minimized was set. As is clear from FIG. 1, the sensitivity can be increased without lowering the carrier level by adding a small amount of Ta to Al. A similar effect is obtained in addition to Al and Ta, in addition to Al and Ti, Zr, V, P
It was also recognized when an alloy with t, Mo, Cr, etc. was used.
【００１０】[0010]
【発明の効果】本発明による相変化記録媒体はＣ／Ｎ
比、感度共に良好な特性を示す。The phase change recording medium according to the present invention has a C / N ratio.
It shows good characteristics in both ratio and sensitivity.
【図１】反射膜中のＴａ含有量と最適記録パワー及び、
キャリアレベルの相関を示したグラフ。FIG. 1 shows a Ta content in a reflective film, an optimum recording power, and
5 is a graph showing carrier level correlation.
Claims (4)
して設けられた記録層の結晶状態を熱的に変化させて光
反射率を変えることにより記録を行なう相変化記録媒体
において、記録層上に反射層を設けてなり、該反射層を
Ａｌ1-x Ｍx（ＭはＴａ，Ｔｉ，Ｚｒ，Ｖ，Ｐｔ，Ｍ
ｏ，Ｃｒから選ばれる少なくとも１種の元素、ｘは０．
０１〜０．１５の数）によって形成したことを特徴とす
る相変化記録媒体。1. A phase change recording medium in which recording is performed by thermally changing a crystal state of a recording layer provided on a polycarbonate substrate with a dielectric layer interposed therebetween to change light reflectivity. A reflective layer is provided, and the reflective layer is formed of Al 1-x M x (M is Ta, Ti, Zr, V, Pt, M
at least one element selected from o and Cr;
(Number of 01 to 0.15).
いられ、干渉効果が高まるように設けられている請求項
１に記載の相変化記録媒体。2. The phase change recording medium according to claim 1, wherein a material containing SiO 2 is used as the dielectric layer, and the dielectric layer is provided so as to enhance the interference effect.
項１又は２に記載の相変化記録媒体。3. The phase change recording medium according to claim 1, wherein the thickness of the recording layer is 600 ° or less.
度が上がり、キャリアレベルの低下が１．５ｄＢ以下で
ある請求項１乃至３のいずれか１つに記載の相変化記録
媒体。4. The phase change recording medium according to claim 1, wherein the sensitivity is increased and the decrease in the carrier level is 1.5 dB or less as compared with the case where the reflective layer is made only of Al.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10300612A JP3137093B2 (en) | 1998-10-22 | 1998-10-22 | Phase change recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10300612A JP3137093B2 (en) | 1998-10-22 | 1998-10-22 | Phase change recording medium |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62326238A Division JPH087880B2 (en) | 1987-12-23 | 1987-12-23 | Phase change recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11316976A true JPH11316976A (en) | 1999-11-16 |
| JP3137093B2 JP3137093B2 (en) | 2001-02-19 |
Family
ID=17886958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10300612A Expired - Lifetime JP3137093B2 (en) | 1998-10-22 | 1998-10-22 | Phase change recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3137093B2 (en) |
-
1998
- 1998-10-22 JP JP10300612A patent/JP3137093B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3137093B2 (en) | 2001-02-19 |
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