JPH11286066A - Transparent conductive film - Google Patents
Transparent conductive filmInfo
- Publication number
- JPH11286066A JPH11286066A JP10576998A JP10576998A JPH11286066A JP H11286066 A JPH11286066 A JP H11286066A JP 10576998 A JP10576998 A JP 10576998A JP 10576998 A JP10576998 A JP 10576998A JP H11286066 A JPH11286066 A JP H11286066A
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- transparent conductive
- layer
- index layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、タッチパネル上部
電極、タッチパネル下部電極、ＥＬ用透明電極、プラセ
ル用透明電極等に使用される、光透過率の高い、可撓性
にも優れた、特に黄味の少ないガラスタイプの透明導電
性フイルムに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high light transmittance and excellent flexibility, particularly yellow, used for an upper electrode of a touch panel, a lower electrode of a touch panel, a transparent electrode for EL, a transparent electrode for placell, and the like. The present invention relates to a transparent conductive film of a glass type having a low taste.
【０００２】[0002]
【従来の技術】透明プラスチックフイルムに、透明導電
性膜を製膜した透明導電性フイルムは、その軽さ、可撓
性、成形性などから近年多用されている。これらの層構
成も多数提案されている。これらの従来提案されている
透明導電性フイルムは、実用上、表面反射が向上し使用
者にとって見ずらいなどの課題があり、反射防止のため
高屈折率層と低屈折率層とを併設して課題を解決せんと
する提案もされている。2. Description of the Related Art In recent years, a transparent conductive film obtained by forming a transparent conductive film on a transparent plastic film has been widely used in recent years because of its lightness, flexibility, moldability, and the like. Many of these layer configurations have been proposed. These conventionally proposed transparent conductive films have problems in practical use such that surface reflection is improved and it is difficult for a user to see them.To prevent reflection, a high refractive index layer and a low refractive index layer are provided side by side. There is also a proposal to solve the problem.
【０００３】[0003]
【発明が解決しようとする課題】これら従来の透明導電
性フイルムは、透明性、導電性、表面硬度、密着性、耐
湿性など透明導電性フイルムに要求される基本的性能に
おいて、いずれもそれなりの性能を備えてはいるが、特
定波長での高い透明性とその黄味の少なさを兼ね備えた
ものは知られていない。本発明者らは、透明導電性フイ
ルムに要求される基本的性能において満足すべき性能を
有し、かつ特定波長での高い透明性とその黄味の少なさ
を兼ね備えた透明導電性フイルム、さらに積層数の少な
いかつ膜厚さの小さい透明導電性フイルムを提供するた
めに検討し本発明に到達した。These conventional transparent conductive films all have a certain level of basic performance required for a transparent conductive film such as transparency, conductivity, surface hardness, adhesion, and moisture resistance. Despite its performance, there is no known compound that has both high transparency at a specific wavelength and low yellowness. The present inventors have a satisfactory performance in the basic performance required for a transparent conductive film, and a transparent conductive film having high transparency at a specific wavelength and low yellowness, and The present inventors have studied to provide a transparent conductive film having a small number of layers and a small film thickness, and have reached the present invention.
【０００４】[0004]
【課題を解決するための手段】すなわち本発明は、透明
プラスチックフイルムの一面上に、少なくとも高屈折率
層と低屈折率層と透明導電性層とが設けられた透明導電
性フイルムであって、高屈折率層（Ｈ）の屈折率（ｎ
Ｈ）が１．８以上で２．８以下であり、その光学膜厚
（ｎｄＨ）が４０ｎｍ以上１２０ｎｍ以下で、低屈折率
層（Ｌ）の屈折率（ｎＬ）が１．３以上で１．６以下で
あり、その光学膜厚（ｎｄＬ）が４０ｎｍ以上１１０ｎ
ｍ以下であり、該透明導電性フイルムの光透過率のピー
クが４５０ｎｍから５４０ｎｍの波長間にあり、かつ該
光透過率のピークが８８％以上であり、高屈折率層と低
屈折率層との合計の幾何学的厚さが１５０ｎｍ以下であ
ることを特徴とする透明導電性フイルムである。That is, the present invention relates to a transparent conductive film having at least a high refractive index layer, a low refractive index layer and a transparent conductive layer provided on one surface of a transparent plastic film, The refractive index (n) of the high refractive index layer (H)
H) is from 1.8 to 2.8, the optical thickness (ndH) is from 40 nm to 120 nm, and the refractive index (nL) of the low refractive index layer (L) is from 1.3 to 1.3. 6 and the optical film thickness (ndL) is 40 nm or more and 110 n or more.
m, the light transmittance peak of the transparent conductive film is between 450 nm and 540 nm, and the light transmittance peak is 88% or more, and the high refractive index layer and the low refractive index layer Is a transparent conductive film characterized by having a total geometric thickness of 150 nm or less.
【０００５】また透明プラスチックフイルムの他の一面
に、ハードコート層が設けられた前記の透明導電性フイ
ルムであり、透明プラスチックフイルムと高屈折率層と
の間にハードコート層が設けられた前記の透明導電性フ
イルムであり、透明プラスチックフイルムと高屈折率層
との間にアンカーコート層が設けられた前記の透明導電
性フイルムであり、透明導電性層がインジウム・錫・酸
化物を主成分とするものであって、その幾何学的厚さが
１４０ｎｍ以下である前記の透明導電性フイルムであ
り、高屈折率層と低屈折率層との合計の幾何学的厚さが
１００ｎｍ以下である前記の透明導電性フイルムであ
る。The above-mentioned transparent conductive film having a hard coat layer provided on another surface of the transparent plastic film, wherein the hard coat layer is provided between the transparent plastic film and the high refractive index layer. A transparent conductive film, wherein the transparent conductive film is the transparent conductive film provided with an anchor coat layer between the transparent plastic film and the high refractive index layer, wherein the transparent conductive layer is mainly composed of indium tin oxide. The transparent conductive film having a geometric thickness of 140 nm or less, wherein the total geometric thickness of the high refractive index layer and the low refractive index layer is 100 nm or less. Is a transparent conductive film.
【０００６】[0006]
【発明の実施態様】本発明における透明プラスチックフ
イルムとしては、透明性のあるものであれば特に限定さ
れるものではないが、例えば、ポリエチレンテレフタレ
ートフイルム、ポリエチレンナフタレートフイルム、ポ
リカーボネートフイルム、トリアセチルセルロースフイ
ルム、（メタ）アクリロニトリルフイルム、ポリエーテ
ルサルフォンフルム、ポリフェニレンスルフィッドフイ
ルム、等が挙げられる。これらのフイルムは、透明性に
おいて優れた値を有するものたとえば全光透過率で８５
％以上のもの、また耐熱性においても１５０℃での収縮
率が全方向で２％以下のもの、また光学的に異方性のな
いもの、が好適に使用される。BEST MODE FOR CARRYING OUT THE INVENTION The transparent plastic film in the present invention is not particularly limited as long as it is transparent. For example, polyethylene terephthalate film, polyethylene naphthalate film, polycarbonate film, triacetyl cellulose film , (Meth) acrylonitrile film, polyethersulfone film, polyphenylene sulfide film, and the like. These films have excellent transparency, for example, 85% in total light transmittance.
% Or less, and also has a heat resistance of 2% or less in all directions at 150 ° C., and has no optical anisotropy.
【０００７】本発明おいては、上記の透明プラスチック
フイルムの一面に、ハードコート層を設けるか、または
設けずして、他面に高屈折率層、低屈折率層、透明導電
性層を設けるが、該他面に予めアンカーコート層または
前記のハードコート層を設けて後高屈折率層、低屈折率
層、透明導電性層を設けた方が好ましい。In the present invention, a high-refractive-index layer, a low-refractive-index layer, and a transparent conductive layer are provided on one surface of the above-mentioned transparent plastic film, with or without a hard coat layer. However, it is preferable that an anchor coat layer or the above-mentioned hard coat layer is provided on the other surface in advance, followed by a high refractive index layer, a low refractive index layer, and a transparent conductive layer.
【０００８】これらのハードコート層は、紫外線硬化樹
脂、電子線硬化樹脂、アルコキシシラン加水分解縮合系
樹脂、メラミン系樹脂、チタネート系化合物からのも
の、（メタ）アクリレート系アルコール変性多官能化合
物、トリメチロールプロパン（メタ）アクリレート、ト
リプロピレングリコールジアクリレート、ペンタエリス
リトールトリアクリレート、１，６ヘキサンジオール
（メタ）アクリレート等の層であればよく、特に限定さ
れるものではないが、好ましくは鉛筆硬度において２Ｈ
以上さらに好ましくは３Ｈ以上のハードコート層であ
る。本発明におけるアンカーコート層は、ハードコート
層と同一のものでもよく、ハードコート層を構成するも
の以外の樹脂からなるものでもよい、たとえば密着性向
上のためにアクリル系樹脂、ウレタン・アクリル系樹
脂、アクリル・メラミン系樹脂、有機珪素化合物、チタ
ネート系化合物等を使用する。上記ハードコート層（ま
たはアンカーコート層）は、予め少量のシリカ微粒子を
添加含有せしめたものから形成するなどして、ノングレ
ア化したものでもよい、このノングレア化により層は粗
面化され、透明電極としてのニュートンリング発生防止
に有効である。These hard coat layers are made of an ultraviolet-curable resin, an electron beam-curable resin, an alkoxysilane hydrolysis-condensation resin, a melamine resin, a titanate compound, a (meth) acrylate-based alcohol-modified polyfunctional compound, Any layer such as methylolpropane (meth) acrylate, tripropylene glycol diacrylate, pentaerythritol triacrylate, and 1,6 hexanediol (meth) acrylate may be used, and the layer is not particularly limited.
The hard coat layer is more preferably 3H or more. The anchor coat layer in the present invention may be the same as the hard coat layer, or may be made of a resin other than the one constituting the hard coat layer. For example, an acrylic resin, a urethane-acrylic resin for improving adhesion And acryl / melamine resins, organic silicon compounds, titanate compounds and the like. The hard coat layer (or the anchor coat layer) may be non-glare, for example, formed from a material in which a small amount of silica fine particles are added and contained in advance. This is effective in preventing Newton's ring from occurring.
【０００９】透明プラスチックフイルムまたはハードコ
ート層を一面に設けた透明プラスチックフイルムの他面
上に、アンカーコート層を設けるかまたは設けずして、
他面に高屈折率層、低屈折率層、透明導電性層を設ける
に際し、これらの他面表面を高屈折率層、低屈折率層、
透明導電性層を設けるに先立って予めプラズマ処理、イ
オンボンバード処理、コロナ放電処理などを施し、密着
性を更に高めてもよいことは勿論である。ついで、該他
面に高屈折率層、低屈折率層、透明導電性層を設けるを
方法は、ＣＶＤ，ＥＢ蒸着、イオンプレーテイング、ス
パッタリング、等が挙げられこれらの方法から適宜選択
使用される。例えばスパッタリングによりＳｉＯ、また
はＳｉＯとＳｉＯ2混合物などのＳｉ酸化物をターゲッ
トとして用い、酸素雰囲気下またはアルゴン雰囲気下で
ＳｉＯ2を設ける方法である。[0009] An anchor coat layer may or may not be provided on the other surface of the transparent plastic film or the transparent plastic film having the hard coat layer provided on one surface thereof.
When providing a high-refractive-index layer, a low-refractive-index layer, and a transparent conductive layer on the other surface, these other surfaces have a high-refractive-index layer, a low-refractive-index layer,
Prior to providing the transparent conductive layer, a plasma treatment, an ion bombardment treatment, a corona discharge treatment, or the like may be performed in advance to further enhance the adhesion. Then, a method of providing a high refractive index layer, a low refractive index layer, and a transparent conductive layer on the other surface includes CVD, EB deposition, ion plating, sputtering, and the like, and these methods are appropriately selected and used. . For example, there is a method in which SiO 2 is formed by sputtering, using SiO or a Si oxide such as a mixture of SiO and SiO 2 as a target under an oxygen atmosphere or an argon atmosphere.
【００１０】本発明における高屈折率層としては、具体
的にはＣＶＤ，ＥＢ蒸着、イオンプレーテイング、スパ
ッタリング、等によって形成される屈折率（ｎＨ）が
１．８以上で２．８以下であり、その光学膜厚（ｎｄ
Ｈ）が４０ｎｍ以上１２０ｎｍ以下である層であり、Ｔ
ｉＯ2，ＩＴＯ，ＳｎＯ2，ＺｒＯ2，Ｓｉ3Ｎ4等からの
これらの層が挙げられる。The high refractive index layer in the present invention has a refractive index (nH) formed by CVD, EB vapor deposition, ion plating, sputtering or the like of 1.8 or more and 2.8 or less. , Its optical thickness (nd
H) is a layer having a thickness of 40 nm or more and 120 nm or less;
iO 2, ITO, include these layers from SnO 2, ZrO 2, Si 3 N 4 or the like.
【００１１】本発明における低屈折率層としては、具体
的にはＣＶＤ，ＥＢ蒸着、イオンプレーテイング、スパ
ッタリング、等によって形成される屈折率（ｎＬ）が
１．３以上で１．６以下であり、その光学膜厚（ｎｄ
Ｌ）が４０ｎｍ以上１１０ｎｍ以下である層であり、Ｓ
ｉＯ2，ＭｇＦ2等からのこれらの層が挙げられる。本発
明における、上記の高屈折率層と低屈折率層との合計の
幾何学的厚さは１５０ｎｍ以下であり、好ましくは１２
０ｎｍ以下であり、さらに好ましくは１００ｎｍ以下で
ある。この高屈折率層と低屈折率層との合計の幾何学的
厚さが、１５０ｎｍを超える場合は両層の割れ、剥がれ
が生じ易く、タッチパネル等に使用した時耐久性の劣る
ものとなったり、光透過率のピークが４５０ｎｍから５
４０ｎｍの波長間に存在せず、５４０ｎｍを超えた場合
は黄味が増大する、またこれらの層は薄いほど経済的に
も優れている。The low refractive index layer in the present invention has a refractive index (nL) formed by CVD, EB evaporation, ion plating, sputtering, or the like of 1.3 or more and 1.6 or less. , Its optical thickness (nd
L) is a layer having a thickness of 40 nm or more and 110 nm or less;
These layers from iO 2 , MgF 2 etc. are mentioned. In the present invention, the total geometric thickness of the high refractive index layer and the low refractive index layer is 150 nm or less, preferably 12 nm or less.
It is 0 nm or less, more preferably 100 nm or less. When the total geometric thickness of the high refractive index layer and the low refractive index layer exceeds 150 nm, both layers are liable to crack and peel off, resulting in poor durability when used for a touch panel or the like. , The peak of the light transmittance is from 450 nm to 5
When it is not present between the wavelengths of 40 nm and exceeds 540 nm, the yellowness increases, and the thinner these layers are, the more economically they are.
【００１２】本発明における透明導電性層としては、具
体的にはＣＶＤ，ＥＢ蒸着、イオンプレーテイング、ス
パッタリング、等によって形成される屈折率（ｎＣ）が
１．８以上で２．４以下であり、その光学膜厚（ｎｄ
Ｃ）が１０ｎｍ以上２７０ｎｍ以下、好ましくは２０ｎ
ｍ以上２００ｎｍ以下である層であり、ＩＴＯ，ＺｎＯ
2系，ＣｄＯ系，ＳｎＯ2系等からのこれらの層が挙げら
れるが、なかでも、インジウム・錫・酸化物を主成分と
するＩＴＯが好ましい。。以下、実施例を以って本発明
を説明するが、本発明はこれらの実施例に限定されるも
のではない。The transparent conductive layer in the present invention has a refractive index (nC) formed by CVD, EB vapor deposition, ion plating, sputtering or the like of 1.8 or more and 2.4 or less. , Its optical thickness (nd
C) is 10 nm or more and 270 nm or less, preferably 20 n
m or more and 200 nm or less.
2 system, CdO-based, including but these layers from SnO 2 system or the like, among others, ITO mainly composed of indium tin oxide. . Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited to these examples.
【００１３】[0013]
【実施例】＊＊実施例１ 厚さ１８８ミクロンのポリエチレンテレフタレートフイ
ルムの両面に、アクリレート系アルコール変性多官能化
合物を主材とする塗布液を塗布・予備乾燥・紫外線硬化
して厚さ５ミクロンのハードコート層を形成し、該層の
一面をアルゴンガス下、圧力４Ｐａで、対向する電極に
直流１ｋＶを加えてグロー放電処理した。このグロー放
電処理を施したハードコート層上に、先ず高屈折率層と
してのＩＴＯ膜を、インジウム：錫＝９０：１０のター
ゲットを用い、真空室内を１０-3Ｐａとし、ＡｒとＯ2
の混合ガスを導入しながら５×１０-1ＰａとしてＤＣス
パッタリングで形成した、このＩＴＯ膜の屈折率ｎは
２．０５であり、光学膜厚ｎｄは１００ｎｍであった
（幾何学的厚さｄは約４９ｎｍ）。ついでこの高屈折率
層としてのＩＴＯ膜上に、低屈折率層としてのＳｉＯ2
膜を、Ｓｉのターゲットを用い、真空室内を１０-3Ｐａ
とし、ＡｒとＯ2の混合ガスを導入しながら高周波スパ
ッタリングで形成した、このＳｉＯ2膜の屈折率ｎは
１．４６であり光学膜厚ｎｄは７０ｎｍであった。さら
にこの低屈折率層としてのＳｉＯ2膜の上に、透明導電
性層としてのＩＴＯ膜を、インジウム：錫＝９０：１０
のターゲットを用い、真空室内を１０-3Ｐａとし、Ａｒ
とＯ2の混合ガスを導入しながら５×１０-1Ｐａとして
ＤＣスパッタリングで形成した、このＩＴＯ膜の屈折率
は２．０５であり光学膜厚ｎｄは４０ｎｍであった。こ
のようにして得られた透明導電性フイルムの、高屈折率
層と低屈折率層との合計の幾何学的厚さは９６ｎｍであ
り、表面抵抗は３５０Ω／□であり、光透過率のピーク
は４９０ｎｍにあってその値は９１％であった。EXAMPLES ** Example 1 A coating liquid mainly composed of an acrylate-based alcohol-modified polyfunctional compound was applied to both sides of a 188-micron-thick polyethylene terephthalate film, preliminarily dried, and ultraviolet-cured to form a 5-micron-thick film. A hard coat layer was formed, and one surface of the layer was subjected to glow discharge treatment by applying a direct current of 1 kV to the opposing electrode under argon gas at a pressure of 4 Pa. On the hard coat layer subjected to the glow discharge treatment, first, an ITO film as a high refractive index layer was formed using a target of indium: tin = 90: 10, the vacuum chamber was set to 10 −3 Pa, and Ar and O 2.
The ITO film was formed by DC sputtering at a pressure of 5 × 10 −1 Pa while introducing a mixed gas of the above. The ITO film had a refractive index n of 2.05 and an optical film thickness nd of 100 nm (geometric thickness d). Is about 49 nm). Next, on this ITO film as a high refractive index layer, SiO 2 as a low refractive index layer was formed.
The film is formed using a Si target and the vacuum chamber is set to 10 −3 Pa.
The SiO 2 film formed by high frequency sputtering while introducing a mixed gas of Ar and O 2 had a refractive index n of 1.46 and an optical film thickness nd of 70 nm. Further, an ITO film as a transparent conductive layer was formed on the SiO 2 film as the low refractive index layer by indium: tin = 90: 10.
, The vacuum chamber is set to 10 −3 Pa, and Ar
The ITO film was formed by DC sputtering at a pressure of 5 × 10 −1 Pa while introducing a mixed gas of O 2 and O 2. The refractive index of the ITO film was 2.05, and the optical thickness nd was 40 nm. The transparent conductive film thus obtained has a total geometric thickness of the high refractive index layer and the low refractive index layer of 96 nm, a surface resistance of 350 Ω / □, and a peak of light transmittance. Was at 490 nm and the value was 91%.
【００１４】＊＊実施例２ 厚さ１００ミクロンのポリカーボネートフイルムの一面
に、アクリレート系アルコール変性多官能化合物を主材
とする塗布液を塗布・予備乾燥・紫外線硬化して厚さ５
ミクロンのハードコート層を形成し、該層をアルゴンガ
ス下、圧力４Ｐａで、対向する電極に直流１ｋＶを加え
てグロー放電処理した。このグロー放電処理を施したハ
ードコート層上に、先ず高屈折率層としてのＴｉＯ2膜
を、坩堝に入れたＴｉ3Ｏ5のペレットを用い、真空室内
を１０-4Ｐａとし、Ｏ2ガスを導入しながら２×１０-2
Ｐａとし室内に設けたアンテナに高周波（１３．５６Ｍ
Ｈｚ，１．５ＫＷ）をかけてＥＢ蒸着で形成した、この
ＴｉＯ2膜の屈折率は２．３０であり光学膜厚ｎｄは８
０ｎｍであった。この高屈折率層としてのＴｉＯ2膜上
に、低屈折率層としてのＳｉＯ2膜を、Ｓｉのターゲッ
トを用い、真空室内を１０-3Ｐａとし、ＡｒとＯ2の混
合ガスを導入しながら高周波スパッタリングで形成し
た、このＳｉＯ2膜の屈折率は１．４６であり光学膜厚
ｎｄは８０ｎｍであった。さらにこの低屈折率層として
のＳｉＯ2膜の上に、透明導電性層としてのＩＴＯ膜
を、インジウム：錫＝９０：１０のターゲットを用い、
真空室内を１０-3Ｐａとし、ＡｒとＯ2の混合ガスを導
入しながら５×１０-1ＰａとしてＤＣスパッタリングで
形成した、このＩＴＯ膜の屈折率は２．０５であり光学
膜厚ｎｄは４０ｎｍであった。このようにして得られた
透明導電性フイルムの、高屈折率層と低屈折率層との合
計の幾何学的厚さは９３ｎｍであり、表面抵抗は３５０
Ω／□であり、光透過率のピークは５００ｎｍにあって
その値は９１％であった。** Example 2 A coating solution mainly composed of an acrylate-based alcohol-modified polyfunctional compound is applied to one surface of a 100-μm-thick polycarbonate film, preliminarily dried, and cured by ultraviolet rays to a thickness of 5 μm.
A micron hard coat layer was formed, and the layer was subjected to glow discharge treatment by applying a direct current of 1 kV to the opposing electrodes under argon gas at a pressure of 4 Pa. This glow discharge treatment applied hard coat layer, first a TiO 2 film as a high refractive index layer, using the pellets of the Ti 3 O 5 was placed in a crucible, a vacuum chamber and 10 -4 Pa, O 2 gas 2 × 10 -2 while introducing
Pa and a high frequency (13.56M)
Hz, 1.5 KW), and the TiO 2 film was formed by EB vapor deposition.
It was 0 nm. On this TiO 2 film as a high refractive index layer, an SiO 2 film as a low refractive index layer was formed by using a Si target, setting the vacuum chamber to 10 −3 Pa, and introducing a mixed gas of Ar and O 2. The refractive index of this SiO 2 film formed by high frequency sputtering was 1.46, and the optical thickness nd was 80 nm. Further, an ITO film as a transparent conductive layer was formed on the SiO 2 film as the low refractive index layer by using a target of indium: tin = 90: 10,
The vacuum chamber was set at 10 −3 Pa, and a mixed gas of Ar and O 2 was introduced to form a 5 × 10 −1 Pa by DC sputtering. The ITO film had a refractive index of 2.05 and an optical film thickness nd of 2,000. It was 40 nm. The total geometric thickness of the high refractive index layer and the low refractive index layer of the transparent conductive film thus obtained was 93 nm, and the surface resistance was 350 nm.
Ω / □, the light transmittance peak was at 500 nm, and the value was 91%.
【００１５】＊＊比較例１ 厚さ１８８ミクロンのポリエチレンテレフタレートフイ
ルムの両面に、アクリレート系アルコール変性多官能化
合物を主材とする塗布液を塗布・予備乾燥・紫外線硬化
して厚さ５ミクロンのハードコート層を形成し、該層の
一面をアルゴンガス下、圧力４Ｐａで、対向する電極に
直流１ｋＶを加えてグロー放電処理した。このグロー放
電処理を施したハードコート層上に、先ず高屈折率層と
してのＩＴＯ膜を、インジウム：錫＝９０：１０のター
ゲットを用い、真空室内を１０-3Ｐａとし、ＡｒとＯ2
の混合ガスを導入しながら５×１０-1ＰａとしてＤＣス
パッタリングで形成した、このＩＴＯ膜の屈折率は２．
０５であり光学膜厚ｎｄは８０ｎｍであった。ついでこ
の高屈折率層としてのＩＴＯ膜上に、低屈折率層として
のＳｉＯ2膜を、Ｓｉのターゲットを用い、真空室内を
１０-3Ｐａとし、ＡｒとＯ2の混合ガスを導入しながら
高周波スパッタリングで形成した、このＳｉＯ2膜の屈
折率は１．４６であり光学膜厚ｎｄは１２０ｎｍであっ
た。さらにこの低屈折率層としてのＳｉＯ2膜の上に、
透明導電性層としてのＩＴＯ膜を、インジウム：錫＝９
０：１０のターゲットを用い、真空室内を１０-3Ｐａと
し、ＡｒとＯ2の混合ガスを導入しながら５×１０-1Ｐ
ａとしてＤＣスパッタリングで形成した、このＩＴＯ膜
の屈折率は２．０５であり光学膜厚ｎｄは４０ｎｍであ
った。このようにして得られた透明導電性フイルムの、
高屈折率層と低屈折率層との合計の幾何学的厚さは１２
０ｎｍであり、表面抵抗は３５０Ω／□であり、光透過
率のピークは６２０ｎｍにあってその値は９１％であっ
た。** Comparative Example 1 A coating liquid mainly composed of an acrylate-based alcohol-modified polyfunctional compound is applied to both surfaces of a polyethylene terephthalate film having a thickness of 188 microns, preliminarily dried, and cured by ultraviolet rays to form a hard film having a thickness of 5 microns. A coat layer was formed, and one surface of the layer was subjected to glow discharge treatment by applying a direct current of 1 kV to the opposing electrode under argon gas at a pressure of 4 Pa. On the hard coat layer subjected to the glow discharge treatment, first, an ITO film as a high refractive index layer was formed using a target of indium: tin = 90: 10, the vacuum chamber was set to 10 −3 Pa, and Ar and O 2.
The ITO film was formed by DC sputtering at a pressure of 5 × 10 −1 Pa while introducing a mixed gas of 1. The refractive index of this ITO film was 2.
05, and the optical thickness nd was 80 nm. Then, an SiO 2 film as a low refractive index layer is formed on the ITO film as a high refractive index layer by using a Si target, setting the vacuum chamber to 10 −3 Pa, and introducing a mixed gas of Ar and O 2. The refractive index of this SiO 2 film formed by high frequency sputtering was 1.46, and the optical film thickness nd was 120 nm. Furthermore, on this SiO 2 film as a low refractive index layer,
An ITO film as a transparent conductive layer was formed by using indium: tin = 9
Using a target of 0:10, the vacuum chamber was set to 10 −3 Pa, and 5 × 10 −1 P while introducing a mixed gas of Ar and O 2.
The ITO film formed by DC sputtering as a had a refractive index of 2.05 and an optical film thickness nd of 40 nm. Of the transparent conductive film thus obtained,
The total geometric thickness of the high and low refractive index layers is 12
0 nm, the surface resistance was 350 Ω / □, and the peak of the light transmittance was at 620 nm, and the value was 91%.
【００１６】＊＊比較例２ 下記の膜厚以外は、実施例１、比較例１と同様にして、
透明導電性フイルムを作製した。高屈折率層としてのＩ
ＴＯ膜の光学膜厚ｎｄは１００ｎｍ、低屈折率層として
のＳｉＯ2膜の光学膜厚ｎｄは３０ｎｍ、透明導電性層
としてのＩＴＯ膜の光学膜厚ｎｄは４０ｎｍ。このよう
にして得られた透明導電性フイルムの、高屈折率層と低
屈折率層との合計の幾何学的厚さは７０ｎｍであり、表
面抵抗は３５０Ω／□であり、光透過率のピークは４７
０ｎｍにあってその値は８５％であった。** Comparative Example 2 The same procedures as in Example 1 and Comparative Example 1 were carried out except for the following film thickness.
A transparent conductive film was produced. I as a high refractive index layer
The optical thickness nd of the TO film is 100 nm, the optical thickness nd of the SiO 2 film as the low refractive index layer is 30 nm, and the optical thickness nd of the ITO film as the transparent conductive layer is 40 nm. The transparent conductive film thus obtained has a total geometric thickness of the high refractive index layer and the low refractive index layer of 70 nm, a surface resistance of 350 Ω / □, and a peak of light transmittance. Is 47
At 0 nm, the value was 85%.
【００１７】＊＊比較例３ 下記の膜厚以外は、実施例１、比較例１と同様にして、
透明導電性フイルムを作製した。高屈折率層としてのＩ
ＴＯ膜の光学膜厚ｎｄは１３０ｎｍ、低屈折率層として
のＳｉＯ2膜の光学膜厚ｎｄは８０ｎｍ、透明導電性層
としてのＩＴＯ膜の光学膜厚ｎｄは４０ｎｍ。このよう
にして得られた透明導電性フイルムの、高屈折率層と低
屈折率層との合計の幾何学的厚さは１１７ｎｍであり、
表面抵抗は３５０Ω／□であり、光透過率のピークは５
６０ｎｍにあってその値は９１％であった。** Comparative Example 3 Except for the following film thickness, the same as in Example 1 and Comparative Example 1,
A transparent conductive film was produced. I as a high refractive index layer
The optical thickness nd of the TO film is 130 nm, the optical thickness nd of the SiO 2 film as the low refractive index layer is 80 nm, and the optical thickness nd of the ITO film as the transparent conductive layer is 40 nm. The total geometric thickness of the high refractive index layer and the low refractive index layer of the transparent conductive film thus obtained was 117 nm,
The surface resistance is 350Ω / □, and the peak of light transmittance is 5
At 60 nm, the value was 91%.
【００１８】＊＊比較例４ 下記の膜厚以外は、実施例１、比較例１と同様にして、
透明導電性フイルムを作製した。高屈折率層としてのＩ
ＴＯ膜の光学膜厚ｎｄは３０ｎｍ、低屈折率層としての
ＳｉＯ2膜の光学膜厚ｎｄは８０ｎｍ、透明導電性層と
してのＩＴＯ膜の光学膜厚ｎｄは４０ｎｍ。このように
して得られた透明導電性フイルムの、高屈折率層と低屈
折率層との合計の幾何学的厚さは７０ｎｍであり、表面
抵抗は３５０Ω／□であり、光透過率のピークは４８０
ｎｍにあってその値は８７％であった。** Comparative Example 4 Except for the following film thickness, the same as in Example 1 and Comparative Example 1,
A transparent conductive film was produced. I as a high refractive index layer
The optical thickness nd of the TO film is 30 nm, the optical thickness nd of the SiO 2 film as the low refractive index layer is 80 nm, and the optical thickness nd of the ITO film as the transparent conductive layer is 40 nm. The transparent conductive film thus obtained has a total geometric thickness of the high refractive index layer and the low refractive index layer of 70 nm, a surface resistance of 350 Ω / □, and a peak of light transmittance. Is 480
Its value in nm was 87%.
【００１９】＊＊比較例５ 下記の膜厚以外は、実施例１、比較例１と同様にして、
透明導電性フイルムを作製した。高屈折率層としてのＩ
ＴＯ膜の光学膜厚ｎｄは０ｎｍ（高屈折率層としてのＩ
ＴＯ膜の形成なしで）、低屈折率層としてのＳｉＯ2膜
の光学膜厚ｎｄは２７５ｎｍ、透明導電性層としてのＩ
ＴＯ膜の光学膜厚ｎｄは４０ｎｍ。このようにして得ら
れた透明導電性フイルムの、高屈折率層と低屈折率層と
の合計の幾何学的厚さは１８６ｎｍであり、表面抵抗は
３５０Ω／□であり、光透過率のピークは４８０ｎｍに
あってその値は８５％であった。** Comparative Example 5 Except for the following film thickness, the same as in Example 1 and Comparative Example 1,
A transparent conductive film was produced. I as a high refractive index layer
The optical film thickness nd of the TO film is 0 nm (I as a high refractive index layer).
The optical film thickness nd of the SiO 2 film as the low refractive index layer is 275 nm, and I as the transparent conductive layer (without forming a TO film).
The optical thickness nd of the TO film is 40 nm. The transparent conductive film thus obtained has a total geometric thickness of the high refractive index layer and the low refractive index layer of 186 nm, a surface resistance of 350 Ω / □, and a light transmittance peak. Was 480 nm and the value was 85%.
【００２０】[0020]
【発明の効果】本発明の、透明プラスチックフイルム
（またはハードコート層およびまたはアンカーコート層
を設けた透明プラスチックフイルム）上に少なくとも高
屈折率層と低屈折率層と透明導電性層とを設けた透明導
電性フイルムにおいて、高屈折率層と低屈折率層との厚
さを一定値以下にするなどの、特定の高屈折率層と低屈
折率層と透明導電性層とを選定することによって、光透
過率のピークが４５０ｎｍから５４０ｎｍの波長間にあ
り、かつ該光透過率のピーク値が８８％以上であり、そ
のため黄味の少ない透明導電性フイルムを提供すること
ができる。According to the present invention, at least a high refractive index layer, a low refractive index layer and a transparent conductive layer are provided on a transparent plastic film (or a transparent plastic film provided with a hard coat layer and / or an anchor coat layer). In the transparent conductive film, by selecting a specific high refractive index layer, low refractive index layer and transparent conductive layer, such as making the thickness of the high refractive index layer and the low refractive index layer a certain value or less. The peak of the light transmittance is between 450 nm and 540 nm, and the peak value of the light transmittance is 88% or more, so that it is possible to provide a transparent conductive film with less yellowness.
Claims (6)
少なくとも高屈折率層と低屈折率層と透明導電性層とが
設けられた透明導電性フイルムであって、高屈折率層
（Ｈ）の屈折率（ｎＨ）が１．８以上で２．８以下であ
り、その光学膜厚（ｎｄＨ）が４０ｎｍ以上１２０ｎｍ
以下で、低屈折率層（Ｌ）の屈折率（ｎＬ）が１．３以
上で１．６以下であり、その光学膜厚（ｎｄＬ）が４０
ｎｍ以上１１０ｎｍ以下であり、該透明導電性フイルム
の光透過率のピークが４５０ｎｍから５４０ｎｍの波長
間にあり、かつ該光透過率のピークが８８％以上であ
り、高屈折率層と低屈折率層との合計の幾何学的厚さが
１５０ｎｍ以下であることを特徴とする透明導電性フイ
ルム。1. A transparent plastic film on one side,
A transparent conductive film provided with at least a high refractive index layer, a low refractive index layer, and a transparent conductive layer, wherein the high refractive index layer (H) has a refractive index (nH) of 1.8 or more and 2.8. And the optical thickness (ndH) is 40 nm or more and 120 nm or less.
Below, the refractive index (nL) of the low refractive index layer (L) is 1.3 or more and 1.6 or less, and the optical thickness (ndL) thereof is 40 or less.
nm or more and 110 nm or less, the light transmittance peak of the transparent conductive film is between 450 nm and 540 nm, and the light transmittance peak is 88% or more. A transparent conductive film having a total geometric thickness of 150 nm or less.
に、ハードコート層が設けられた請求項１記載の透明導
電性フイルム。2. The transparent conductive film according to claim 1, wherein a hard coat layer is provided on another surface of the transparent plastic film.
との間にハードコート層が設けられた請求項１および請
求項２記載の透明導電性フイルム。3. The transparent conductive film according to claim 1, wherein a hard coat layer is provided between the transparent plastic film and the high refractive index layer.
との間にアンカーコート層が設けられた請求項１記載の
透明導電性フイルム。4. The transparent conductive film according to claim 1, wherein an anchor coat layer is provided between the transparent plastic film and the high refractive index layer.
を主成分とするものであって、その幾何学的厚さが１４
０ｎｍ以下である請求項１記載の透明導電性フイルム。5. A transparent conductive layer comprising indium / tin / oxide as a main component and having a geometric thickness of 14
The transparent conductive film according to claim 1, which has a thickness of 0 nm or less.
学的厚さが１００ｎｍ以下である請求項１記載の透明導
電性フイルム。6. The transparent conductive film according to claim 1, wherein the total geometric thickness of the high refractive index layer and the low refractive index layer is 100 nm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10576998A JPH11286066A (en) | 1998-03-31 | 1998-03-31 | Transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10576998A JPH11286066A (en) | 1998-03-31 | 1998-03-31 | Transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11286066A true JPH11286066A (en) | 1999-10-19 |
Family
ID=14416389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10576998A Pending JPH11286066A (en) | 1998-03-31 | 1998-03-31 | Transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11286066A (en) |
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