JPH11220168A - Gallium nitride compound semiconductor device and manufacture thereof - Google Patents
Gallium nitride compound semiconductor device and manufacture thereofInfo
- Publication number
- JPH11220168A JPH11220168A JP3661898A JP3661898A JPH11220168A JP H11220168 A JPH11220168 A JP H11220168A JP 3661898 A JP3661898 A JP 3661898A JP 3661898 A JP3661898 A JP 3661898A JP H11220168 A JPH11220168 A JP H11220168A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- positive electrode
- metal layer
- thin
- gallium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板上に窒化ガリ
ウム系化合物半導体から成る層が積層されたフリップチ
ップ型の発光素子に関し、特に発光ムラがなく、高光度
で、駆動電圧の低いフリップチップ型の発光素子に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flip-chip type light-emitting device in which a layer made of a gallium nitride-based compound semiconductor is laminated on a substrate, and more particularly, to a flip-chip type light-emitting device having no unevenness of light emission, high luminous intensity and low driving voltage. Light emitting device of the type.
【０００２】[0002]
【従来の技術】図４に、従来技術によるフリップチップ
型の発光素子４００の断面図を示す。１０１は、サファ
イヤ基板、１０２は、ＡｌＮバッファ層、１０３は、ｎ
型のＧａＮ層、１０４は、ｎ型のＧａＮクラッド層、１
０５は、活性層、１０６は、ｐ型のＡｌＧａＮクラッド
層、１０７は、ｐ型のＧａＮコンタクト層、４２０は、
正電極、１３０は、保護膜、１４０は、多層構造の負電
極である。また、コンタクト層１０７に接続されている
正電極４２０は、例えば、ニッケル（Ｎｉ）より成る膜
厚３０００Åの金属層により形成されている。2. Description of the Related Art FIG. 4 shows a sectional view of a flip-chip type light emitting device 400 according to the prior art. 101 is a sapphire substrate, 102 is an AlN buffer layer, 103 is n
GaN layer 104 is an n-type GaN cladding layer, 1
05 is an active layer, 106 is a p-type AlGaN cladding layer, 107 is a p-type GaN contact layer, and 420 is
The positive electrode, 130 is a protective film, and 140 is a negative electrode having a multilayer structure. The positive electrode 420 connected to the contact layer 107 is formed of, for example, a metal layer of nickel (Ni) having a thickness of 3000 °.
【０００３】[0003]
【発明が解決しようとする課題】サファイヤ基板１０１
の側に光を十分に反射させるために、通常フリップチッ
プ型の正電極４２０には、厚膜のメタル電極を用いる。
しかし、コンタクト層１０７上に直接厚膜の正電極４２
０を形成した場合、コンタクト層１０７との接触面にお
ける接触抵抗は、不均一となり、点状に接触抵抗の低い
所が多数発生する。このため、この接触面を通る電流の
面密度にムラが生じ、電流は、接触抵抗の小さな箇所に
集中するようになる。したがって、活性層の光度にも空
間的なムラが発生する。また、コンタクト層１０７上に
直接厚膜の正電極４２０を形成した場合、接触面全体と
しての接触抵抗の値が大きくなるため、発光素子４００
の駆動電圧は高くなる。SUMMARY OF THE INVENTION Sapphire substrate 101
In order to sufficiently reflect light to the side of the substrate, a thick-film metal electrode is usually used for the flip-chip type positive electrode 420.
However, the thick positive electrode 42 is directly formed on the contact layer 107.
When 0 is formed, the contact resistance at the contact surface with the contact layer 107 becomes non-uniform, and a number of points having low contact resistance are generated in a dot-like manner. For this reason, unevenness occurs in the surface density of the current passing through the contact surface, and the current is concentrated on a portion having a small contact resistance. Therefore, spatial unevenness also occurs in the luminous intensity of the active layer. Further, when the thick positive electrode 420 is formed directly on the contact layer 107, the value of the contact resistance of the entire contact surface becomes large.
Drive voltage becomes higher.
【０００４】本発明は、上記の問題を解決するために成
されたものであり、その目的は、発光光度にムラがな
く、高光度、低駆動電圧の発光素子を提供することであ
る。The present invention has been made to solve the above-mentioned problem, and an object of the present invention is to provide a light-emitting element having high luminosity and low driving voltage without unevenness in luminous intensity.
【０００５】[0005]
【課題を解決するための手段】上記の課題を解決するた
めの第１の手段は、基板上に窒化ガリウム系化合物半導
体から成る層が積層されたフリップチップ型の発光素子
において、ｐ型半導体側のコンタクト層と前記コンタク
ト層に接続する光を反射する厚膜正電極との間に発光ム
ラの発生を抑止するための薄膜金属層を設けることであ
る。また、第２の手段は、上記の薄膜金属層の膜厚を５
０Å〜５００Åとすることである。また、第３の手段
は、上記の薄膜金属層を複数の種類の金属より形成され
た多層構造とすることである。また、第４の手段は、上
記の厚膜正電極を複数の種類の金属より形成された多層
構造とすることである。また、第５の手段は、上記の薄
膜金属層をプラチナ（Ｐｔ）、コバルト（Ｃｏ）、金
（Ａｕ）、パラジウム（Ｐｄ）、ニッケル（Ｎｉ）、マ
グネシウム（Ｍｇ）、銀（Ａｇ）、アルミニウム（Ａ
ｌ）、バナジウム（Ｖ）、マンガン（Ｍｎ）、ビスマス
（Ｂｉ）またはレニウム（Ｒｅ）の内の少なくとも１種
類の金属により形成することである。更に、第６の手段
は、上記の厚膜正電極をプラチナ（Ｐｔ）、コバルト
（Ｃｏ）、金（Ａｕ）、パラジウム（Ｐｄ）、ニッケル
（Ｎｉ）、マグネシウム（Ｍｇ）、銀（Ａｇ）、アルミ
ニウム（Ａｌ）、バナジウム（Ｖ）、銅（Ｃｕ）、スズ
（Ｓｎ）またはロジウム（Ｒｈ）の内の少なくとも１種
類の金属により形成することである。A first means for solving the above-mentioned problem is to provide a flip-chip type light-emitting element in which a layer made of a gallium nitride-based compound semiconductor is laminated on a substrate. Between the contact layer and the thick positive electrode that reflects light connected to the contact layer. The second means is to set the thickness of the thin film metal layer to 5
0 ° to 500 °. A third means is that the thin-film metal layer has a multilayer structure formed of a plurality of types of metals. A fourth means is that the thick-film positive electrode has a multilayer structure formed of a plurality of types of metals. The fifth means is that the thin film metal layer is formed of platinum (Pt), cobalt (Co), gold (Au), palladium (Pd), nickel (Ni), magnesium (Mg), silver (Ag), aluminum (A
1), vanadium (V), manganese (Mn), bismuth (Bi) or rhenium (Re). Further, a sixth means is that the above-mentioned thick film positive electrode is formed of platinum (Pt), cobalt (Co), gold (Au), palladium (Pd), nickel (Ni), magnesium (Mg), silver (Ag), It is formed of at least one kind of metal among aluminum (Al), vanadium (V), copper (Cu), tin (Sn) and rhodium (Rh).
【０００６】また、上記の半導体発光素子を製造する方
法には、以下の手段がある。即ち、第７の手段は、ｐ型
半導体側のコンタクト層に接続する光を反射する厚膜正
電極を形成する前に、前記コンタクト層の上に発光ムラ
の発生を抑止するための薄膜金属層を形成し、この薄膜
金属層を熱処理した後に前記厚膜正電極を形成すること
である。また、第８の手段は、上記の熱処理を酸素(O2)
雰囲気中で行うことである。[0006] The method for manufacturing the above semiconductor light emitting device includes the following means. That is, the seventh means is that, before forming a thick film positive electrode for reflecting light connected to the contact layer on the p-type semiconductor side, a thin film metal layer for suppressing the occurrence of uneven light emission on the contact layer. And forming the thick-film positive electrode after heat-treating the thin-film metal layer. Eighth means is that the above heat treatment is performed using oxygen (O 2 )
It is done in an atmosphere.
【０００７】[0007]
【作用及び発明の効果】ｐ型半導体側のコンタクト層と
このコンタクト層に接続する光を反射する厚膜正電極と
の間に発光ムラの発生を抑止するための薄膜金属層を設
けたことにより、発光光度にムラがなく、高光度、低駆
動電圧の発光素子を得ることができた。これは、この薄
膜金属層の介在の結果、図１に示すコンタクト層１０７
と薄膜金属層１１０との間の接触抵抗が接触面全体に渡
って低く、一様で、且つ、オーミック性の良いものとな
ったためだと考えられる。また、上記薄膜金属層の材料
として、前記の金属の内の少なくとも１種類の金属を用
いれば、上記の接触抵抗をより小さくできるため、光
度、駆動電圧の点でより優れた発光素子が得られる。ま
た、上記厚膜正電極の材料として、前記の金属の内の少
なくとも１種類の金属を用いれば、これらの金属は仕事
関数が大きいため、より酸化されにくい電極が得られ
る。また、ｐ型半導体側のコンタクト層に接続する光を
反射する厚膜正電極を形成する前に、コンタクト層の上
に発光ムラの発生を抑止するための薄膜金属層を形成
し、この薄膜金属層を熱処理した後に厚膜正電極を形成
することにより、更により発光光度にムラがなく、高光
度、低駆動電圧の発光素子を得ることができた。これ
は、上記の熱処理の結果、図１に示すコンタクト層１０
７と薄膜金属層１１０との間の接触抵抗が接触面全体に
渡って更により低く、一様で、且つ、オーミック性の良
いものとなったためだと考えられる。更に詳細な作用機
構については、現段階では不明であるが、今のところそ
の可能性としては、以下の（１）〜（３）内の少なくと
も１つではないかと考えられる。 （１）薄膜金属層１１０は、非常に薄い（７５Å）の
で、粒界がないか、或いは、粒界が非常に密でムラがな
いため。 （２）薄膜金属層１１０は、非常に薄い（７５Å）の
で、薄膜金属層１１０の内部の歪み（応力）が小さいた
め。 （３）コンタクト層１０７との接触面において、コンタ
クト抵抗を低くするためには、酸素（Ｏ2 ）もしくは何
らかの気相との接触が必要となるため。 重要なことは、上記の薄膜金属層１１０の介在の結果、
或いは更には、上記の熱処理により、発光光度にムラが
なく、高光度、低駆動電圧の発光素子が間違いなく得ら
れるということである。The thin-film metal layer for suppressing the occurrence of uneven light emission is provided between the contact layer on the p-type semiconductor side and the thick-film positive electrode reflecting light connected to this contact layer. Thus, a light emitting device having high luminous intensity and low driving voltage without unevenness in luminous intensity was obtained. This is because the interposition of the thin film metal layer results in the contact layer 107 shown in FIG.
It is considered that the contact resistance between the contact layer and the thin film metal layer 110 is low over the entire contact surface, is uniform, and has a good ohmic property. Further, if at least one of the above-mentioned metals is used as the material of the thin-film metal layer, the contact resistance can be made smaller, so that a light-emitting element having more excellent luminous intensity and driving voltage can be obtained. . If at least one of the above-mentioned metals is used as the material of the thick film positive electrode, an electrode which is less likely to be oxidized can be obtained because these metals have a large work function. In addition, before forming a thick-film positive electrode that reflects light connected to the contact layer on the p-type semiconductor side, a thin-film metal layer is formed on the contact layer to suppress the occurrence of uneven light emission. By forming a thick-film positive electrode after heat-treating the layer, a light-emitting element with even higher luminous intensity and lower driving voltage was obtained with even more uniform luminous intensity. This is because, as a result of the above heat treatment, the contact layer 10 shown in FIG.
It is considered that the contact resistance between the thin film metal layer 7 and the thin film metal layer 110 was even lower over the entire contact surface, and was uniform and had good ohmic properties. Although a more detailed mechanism of action is unknown at this stage, it is considered that the possibility is at least one of the following (1) to (3) at present. (1) Since the thin film metal layer 110 is very thin (75 °), there is no grain boundary, or the grain boundary is very dense and uniform. (2) The strain (stress) inside the thin film metal layer 110 is small because the thin film metal layer 110 is very thin (75 °). (3) In order to lower the contact resistance at the contact surface with the contact layer 107, contact with oxygen (O 2 ) or some gas phase is required. Importantly, as a result of the intervening thin metal layer 110,
Alternatively, the heat treatment described above can provide a light-emitting element with high luminous intensity and low driving voltage without unevenness in luminous intensity.
【０００８】[0008]
【発明の実施の形態】以下、本発明を具体的な実施例に
基づいて説明する。なお、本発明は、以下の実施例に限
定されるものではない。図１に、本発明によるフリップ
チップ型の半導体発光素子１００の断面図を示す。サフ
ァイヤ基板１０１の上には窒化アルミニウム(AlN) から
成る膜厚約２００Åのバッファ層１０２が設けられ、そ
の上にシリコン(Si)ドープのGaN から成る膜厚約4.0 μ
ｍの高キャリア濃度ｎ+ 層１０３が形成されている。こ
の高キャリア濃度ｎ+ 層１０３の上にSiドープのｎ型Ga
N から成る膜厚約0.5 μｍのクラッド層１０４が形成さ
れている。そして、クラッド層１０４の上に単一量子井
戸構造（ＳＱＷ）の中心となる膜厚約５００Åの活性層
１０５が形成されている。活性層１０５の上にはｐ型Al
0.15Ga0.85N から成る膜厚約６００Åのクラッド層１０
６が形成されている。さらに、クラッド層１０６の上に
はｐ型GaN から成る膜厚約１５００Åのコンタクト層１
０７が形成されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described based on specific embodiments. Note that the present invention is not limited to the following embodiments. FIG. 1 is a sectional view of a flip-chip type semiconductor light emitting device 100 according to the present invention. On the sapphire substrate 101, a buffer layer 102 of aluminum nitride (AlN) having a thickness of about 200 ° is provided, and a buffer layer 102 of silicon (Si) doped GaN of about 4.0 μm is formed thereon.
An m + high carrier concentration n + layer 103 is formed. On this high carrier concentration n + layer 103, a Si-doped n-type Ga
A cladding layer 104 made of N and having a thickness of about 0.5 μm is formed. Then, on the cladding layer 104, an active layer 105 having a thickness of about 500 °, which is the center of the single quantum well structure (SQW), is formed. P-type Al on the active layer 105
Cladding layer 10 of 0.15 Ga 0.85 N with a thickness of about 600 °
6 are formed. Further, a contact layer 1 made of p-type GaN and having a thickness of about 1500
07 is formed.
【０００９】又、コンタクト層１０７の上には金属蒸着
による薄膜金属層１１０が、ｎ+ 層１０３上には負電極
１４０が形成されている。薄膜金属層１１０は、コンタ
クト層１０７に接合する膜厚約15Åのコバルト(Co)より
成る薄膜金属層第１層１１１と、Coに接合する膜厚約60
Åの金(Au)より成る薄膜金属層第２層１１２とで構成さ
れている。厚膜正電極１２０は、膜厚約５００Åのニッ
ケル(Ni)より成る厚膜正電極第１層１２１と、膜厚約５
００Åのチタン(Ti)より成る厚膜正電極第２層１２２
と、膜厚約５０００Åのニッケル(Ni)より成る厚膜正電
極第３層１２３とを薄膜金属層１１０の上から順次積層
させることにより構成されている。多層構造の負電極１
４０は、膜厚約１７５Åのバナジウム(V) 層１４１と、
膜厚約１０００Åのアルミニウム(Al)層１４２と、膜厚
約５００Åのバナジウム(V) 層１４３と、膜厚約５００
０Åのニッケル(Ni)層１４４とを高キャリア濃度ｎ+ 層
１０３の一部露出された部分の上から順次積層させるこ
とにより構成されている。また最上部には、ＳｉＯ2 膜
より成る保護膜１３０が形成されている。A thin metal layer 110 is formed on the contact layer 107 by metal evaporation, and a negative electrode 140 is formed on the n + layer 103. The thin-film metal layer 110 has a thin-film metal layer first layer 111 of cobalt (Co) having a thickness of about 15 ° to be bonded to the contact layer 107 and a film thickness of about 60 to be bonded to Co.
And a second thin film metal layer 112 made of gold (Au). The thick positive electrode 120 includes a thick positive electrode first layer 121 made of nickel (Ni) having a thickness of about 500
Thick film positive electrode second layer 122 of titanium (Ti)
And a third layer 123 of a thick positive electrode made of nickel (Ni) having a thickness of about 5000 ° are sequentially laminated on the thin metal layer 110. Negative electrode 1 with multilayer structure
40 is a vanadium (V) layer 141 having a thickness of about 175 °,
An aluminum (Al) layer 142 having a thickness of about 1000 °, a vanadium (V) layer 143 having a thickness of about 500
A nickel (Ni) layer 144 of 0 ° is sequentially laminated on a part of the high carrier concentration n + layer 103 which is partially exposed. A protective film 130 made of a SiO 2 film is formed on the uppermost portion.
【００１０】次に、この発光素子１００の製造方法につ
いて説明する。上記発光素子１００は、有機金属気相成
長法（ＭＯＶＰＥ法）による気相成長により製造され
た。用いられたガスは、アンモニア(NH3) 、キャリアガ
ス(H2,N2) 、トリメチルガリウム(Ga(CH3)3)（以下「TM
G 」と記す）、トリメチルアルミニウム(Al(CH3)3)（以
下「TMA 」と記す）、トリメチルインジウム(In(CH3)3)
（以下「TMI 」と記す）、シラン(SiH4)とシクロペンタ
ジエニルマグネシウム(Mg(C5H5)2) （以下「CP2Mg 」と
記す）である。まず、有機洗浄及び熱処理により洗浄し
たａ面を主面とした単結晶の基板１０１をMOVPE 装置の
反応室に載置されたサセプタに装着する。次に、常圧で
H2を反応室に流しながら温度１１５０℃で基板１０１を
ベーキングした。次に、基板１０１の温度を４００℃ま
で低下させて、H2、NH3 及びTMA を供給してAlN のバッ
ファ層１０２を約２００Åの膜厚に形成した。Next, a method for manufacturing the light emitting device 100 will be described. The light emitting device 100 was manufactured by vapor phase growth using metal organic chemical vapor deposition (MOVPE). The gases used were ammonia (NH 3 ), carrier gas (H 2 , N 2 ), trimethylgallium (Ga (CH 3 ) 3 ) (hereinafter “TM
G ”), trimethylaluminum (Al (CH 3 ) 3 ) (hereinafter referred to as“ TMA ”), trimethylindium (In (CH 3 ) 3 )
(Hereinafter referred to as "TMI"), a silane (SiH 4) and cyclopentadienyl magnesium (Mg (C 5 H 5) 2) ( hereinafter referred to as "CP 2 Mg"). First, a single-crystal substrate 101 whose main surface is the a-plane cleaned by organic cleaning and heat treatment is mounted on a susceptor placed in a reaction chamber of a MOVPE apparatus. Next, at normal pressure
The substrate 101 was baked at a temperature of 1150 ° C. while flowing H 2 into the reaction chamber. Next, the temperature of the substrate 101 was lowered to 400 ° C., and H 2 , NH 3 and TMA were supplied to form the AlN buffer layer 102 to a thickness of about 200 °.
【００１１】次に、基板１０１の温度を１１５０℃にま
で上げ、H2、NH3 、TMG 及びシランを供給し、膜厚約4.
0 μｍ、電子濃度2 ×1018/cm3のシリコン（Ｓｉ）ドー
プのGaN から成る高キャリア濃度ｎ+ 層１０３を形成し
た。次に、基板１０１の温度を１１００℃に保持し、N2
又はH2、NH3 、TMG 及びシランを供給して、膜厚約０．
５μｍ、電子濃度１×1018/cm3のシリコン（Ｓｉ）ドー
プのＧａＮから成るクラッド層１０４を形成した。上記
のクラッド層１０４を形成した後、結晶温度を８５０℃
に降温し、N2又はH2、NH3 、TMG 及びTMI を供給して、
膜厚約５００ÅのGa0.8In0.2N から成る活性層１０５を
形成した。Next, the temperature of the substrate 101 is raised to 1150 ° C., and H 2 , NH 3 , TMG and silane are supplied, and the film thickness is reduced to about 4.
A high carrier concentration n + layer 103 made of GaN doped with silicon (Si) having an electron concentration of 0 μm and an electron concentration of 2 × 10 18 / cm 3 was formed. Then, maintaining the temperature of the substrate 101 to 1100 ° C., N 2
Alternatively, H 2 , NH 3 , TMG and silane are supplied to form a film having a thickness of about 0.1 μm.
A cladding layer 104 made of GaN doped with silicon (Si) having a thickness of 5 μm and an electron concentration of 1 × 10 18 / cm 3 was formed. After forming the cladding layer 104, the crystal temperature is set to 850 ° C.
And supply N 2 or H 2 , NH 3 , TMG and TMI,
An active layer 105 of Ga 0.8 In 0.2 N having a thickness of about 500 ° was formed.
【００１２】次に、基板１０１の温度を１０００℃に昇
温し、N2又はH2、NH3 、TMG 、TMA及びCP2Mg を供給し
て、膜厚約50nm、マグネシウム(Mg)をドープしたｐ型Al
0.15Ga0.85N から成るクラッド層１０６を形成した。次
に、基板１０１の温度を１０００℃に保持し、N2又は
H2、NH3 、TMG 及びCP2Mg を供給して、膜厚約100nm 、
Mgをドープしたｐ型GaN から成るコンタクト層１０７を
形成した。次に、コンタクト層１０７の上にエッチング
マスクを形成し、所定領域のマスクを除去して、マスク
で覆われていない部分のコンタクト層１０７、クラッド
層１０６、活性層１０５、クラッド層１０４、ｎ+ 層１
０３の一部を塩素を含むガスによる反応性イオンエッチ
ングによりエッチングして、ｎ+ 層１０３の表面を露出
させた。次に、以下の手順で、ｎ+ 層１０３に接合する
負電極１４０と、コンタクト層１０７に接合する薄膜金
属層１１０とを形成した。Next, the temperature of the substrate 101 is raised to 1000 ° C., and N 2 or H 2 , NH 3 , TMG, TMA and CP 2 Mg are supplied, and a film thickness of about 50 nm and doped with magnesium (Mg). P-type Al
A cladding layer 106 made of 0.15 Ga 0.85 N was formed. Next, the temperature of the substrate 101 is maintained at 1000 ° C., and N 2 or
By supplying H 2 , NH 3 , TMG and CP 2 Mg, the film thickness is about 100 nm,
A contact layer 107 made of Mg-doped p-type GaN was formed. Next, an etching mask is formed on the contact layer 107, the mask in a predetermined region is removed, and portions of the contact layer 107, the cladding layer 106, the active layer 105, the cladding layer 104, and n + that are not covered with the mask are removed. Tier 1
03 was etched by reactive ion etching using a gas containing chlorine to expose the surface of the n + layer 103. Next, a negative electrode 140 bonded to the n + layer 103 and a thin film metal layer 110 bonded to the contact layer 107 were formed by the following procedure.
【００１３】(1) フォトレジストを塗布し、フォトリソ
グラフィによりｎ+ 層１０３の露出面上の所定領域に窓
を形成して、10-6Torrオーダ以下の高真空に排気した
後、膜厚約１７５Åのバナジウム(V) 層１４１と、膜厚
約１０００Åのアルミニウム(Al)層１４２と、膜厚約５
００Åのバナジウム(V) 層１４３と、膜厚約５０００Å
のニッケル(Ni)層１４４とを順次蒸着した。次に、フォ
トレジストを除去する。これによりｎ+ 層１０３の露出
面上に負電極１４０が形成される。 (2) 次に、表面上にフォトレジストを一様に塗布して、
フォトリソグラフィにより、コンタクト層１０７の上の
薄膜金属層１１０形成部分のフォトレジストを除去し
て、窓部を形成する。 (3) 蒸着装置にて、フォトレジスト及び露出させたコン
タクト層１０７上に、10-6Torrオーダ以下の高真空に排
気した後、膜厚約15ÅのCoを成膜し、このCoより形成さ
れた薄膜金属層第１層１１１の上に膜厚約60ÅのAuより
成る薄膜金属層第２層１１２を成膜する。 (4) 次に、試料を蒸着装置から取り出し、リフトオフ法
によりフォトレジスト上に堆積したCo、Auを除去し、コ
ンタクト層１０７上に薄膜金属層１１０を形成する。 (5) その後、発光ムラの発生を抑止するための薄膜金属
層１１０の熱処理を行った。即ち、試料雰囲気を真空ポ
ンプで排気し、O2ガスを供給して圧力１０Ｐａとし、そ
の状態で雰囲気温度を約 570℃にして、約4 分程度加熱
した。(1) A photoresist is applied, a window is formed in a predetermined region on the exposed surface of the n + layer 103 by photolithography, and the window is evacuated to a high vacuum of the order of 10 −6 Torr or less. A 175% vanadium (V) layer 141, an aluminum (Al) layer 142 having a thickness of about 1000
A vanadium (V) layer 143 of 00Å and a film thickness of about 5000Å
And a nickel (Ni) layer 144 were sequentially deposited. Next, the photoresist is removed. Thereby, negative electrode 140 is formed on the exposed surface of n + layer 103. (2) Next, apply photoresist uniformly on the surface,
The photoresist is removed by photolithography at the portion where the thin-film metal layer 110 is formed on the contact layer 107 to form a window. (3) After evacuation to a high vacuum of the order of 10 −6 Torr or less on the photoresist and the exposed contact layer 107 using a vapor deposition apparatus, a Co film having a film thickness of about 15 ° is formed. A second thin film metal layer 112 made of Au having a thickness of about 60 ° is formed on the first thin film metal layer 111. (4) Next, the sample is taken out of the vapor deposition apparatus, Co and Au deposited on the photoresist are removed by a lift-off method, and a thin film metal layer 110 is formed on the contact layer 107. (5) Thereafter, a heat treatment was performed on the thin-film metal layer 110 to suppress the occurrence of uneven light emission. That is, the sample atmosphere was evacuated with a vacuum pump, O 2 gas was supplied to a pressure of 10 Pa, and in that state, the atmosphere temperature was set to about 570 ° C. and heating was performed for about 4 minutes.
【００１４】上記の工程により形成された薄膜金属層１
１０上に、更に、厚膜正電極１２０を形成するために、
フォトレジストを一様に塗布して、厚膜正電極１２０の
形成部分のフォトレジストに窓を開ける。その後、膜厚
約５００Åのニッケル(Ni)層１２１と、膜厚約５００Å
のチタン(Ti)層１２２と、膜厚約５０００Åのニッケル
(Ni)層１２３とを薄膜金属層１１０の上に順次蒸着によ
り成膜させ、(4) の工程と同様にリフトオフ法により厚
膜正電極１２０を形成する。最後に、エレクトロンビー
ム蒸着により、最上層に一様にＳｉＯ2 より成る保護膜
１３０を形成し、フォトレジストの塗布、フォトリソグ
ラフィー工程を経て、厚膜正電極１２０および負電極１
４０に外部露出部分ができるようにほぼ同面積の窓をそ
れぞれ一つづつウエットエッチングにより形成する。こ
のようにして、発光素子１００を形成した。The thin film metal layer 1 formed by the above steps
10 and further to form a thick-film positive electrode 120,
A photoresist is applied uniformly, and a window is opened in the photoresist at the portion where the thick film positive electrode 120 is formed. Thereafter, a nickel (Ni) layer 121 having a thickness of about 500 、 and a nickel (Ni) layer 121 having a thickness of about 500 Å
Of titanium (Ti) layer 122 and nickel
The (Ni) layer 123 is sequentially formed on the thin film metal layer 110 by vapor deposition, and the thick film positive electrode 120 is formed by the lift-off method in the same manner as in the process (4). Finally, a protective film 130 made of SiO 2 is uniformly formed on the uppermost layer by electron beam evaporation, and a thick film positive electrode 120 and a negative electrode 1 are formed through a photoresist coating and a photolithography process.
Windows each having substantially the same area are formed one by one by wet etching so that an externally exposed portion is formed at 40. Thus, the light emitting element 100 was formed.
【００１５】図２に、性能比較を行うために試作された
半導体発光素子３００（図３）と本発明による上記の半
導体発光素子１００との性能比較表を示す。半導体発光
素子３００（図３）は、半導体発光素子１００と同様の
厚膜正電極１２０を半導体発光素子１００作成時と同様
の方法で直接コンタクト層１０７に形成したものであ
る。この表より、薄膜金属層１１０を有する本発明の半
導体発光素子１００の方が、光度、駆動電圧の両面にお
いて薄膜金属層１１０を有しない上記試作の半導体発光
素子３００よりも優れていることが分かる。FIG. 2 shows a performance comparison table between a prototype semiconductor light emitting device 300 (FIG. 3) and a semiconductor light emitting device 100 according to the present invention. In the semiconductor light emitting device 300 (FIG. 3), a thick film positive electrode 120 similar to that of the semiconductor light emitting device 100 is directly formed on the contact layer 107 by the same method as when the semiconductor light emitting device 100 is manufactured. From this table, it can be seen that the semiconductor light-emitting device 100 of the present invention having the thin-film metal layer 110 is superior to the prototype semiconductor light-emitting device 300 without the thin-film metal layer 110 in terms of both luminous intensity and driving voltage. .
【００１６】また、発光素子３００におけるニッケル
（Ｎｉ）より形成された膜厚５００Åの厚膜正電極第１
層１２１に対して、薄膜金属層１１０の形成時と同様の
熱処理を行った結果、半導体発光素子３００の光度は変
わらず、駆動電圧は逆に上昇した。このことから、薄膜
金属層１１０の厚さは、その金属の種類にも多少依存す
るものの、５００Å以下でなければならないことが判っ
た。また、５０Åよりも薄い場合には、膜厚を一様にす
ることが難しく、また膜厚が薄過ぎて薄膜金属層１１０
の効果が出にくくなる。In the light emitting device 300, the first thick positive electrode 500 nm thick made of nickel (Ni) is used.
As a result of performing the same heat treatment as in forming the thin-film metal layer 110 on the layer 121, the luminous intensity of the semiconductor light-emitting element 300 did not change, and the driving voltage increased. From this, it was found that the thickness of the thin-film metal layer 110 had to be less than 500 °, although it also depended on the kind of the metal. If the thickness is less than 50 °, it is difficult to make the film thickness uniform, and the film thickness is too small,
Is less effective.
【００１７】また、薄膜金属層１１０を積層した後の上
記(5) の熱処理は、酸素(O2)雰囲気中にて行ったが、酸
素は、極微量の酸素分子、酸素原子を含むガスまたはプ
ラズマであってもよい。従って、上記の熱処理の酸素雰
囲気としては、例えば、O2、O3、CO、CO2 、NO、N2O 、
NO2 または、H2O の少なくとも１種又はこれらの混合ガ
ス、或いは、O2、O3、CO、CO2 、NO、N2O 、NO2 また
は、H2O の少なくとも１種と、N2またはHe、Ne、Ar、Kr
などの不活性ガスとの混合ガス、或いは、O2、O3、CO、
CO2 、NO、N2O 、NO2 または、H2O の混合ガスと、N2ま
たはHe、Ne、Ar、Krなどの不活性ガスとの混合ガス等を
用いることもできる。これらのガスを使用した場合に
も、接触抵抗の低抵抗化の実現による本発明の効果を得
ることができる。The heat treatment (5) after the lamination of the thin-film metal layer 110 is performed in an oxygen (O 2 ) atmosphere. The oxygen is a gas or gas containing a trace amount of oxygen molecules and oxygen atoms. It may be plasma. Therefore, as the oxygen atmosphere for the above heat treatment, for example, O 2 , O 3 , CO, CO 2 , NO, N 2 O,
At least one of NO 2 or H 2 O or a mixed gas thereof, or at least one of O 2 , O 3 , CO, CO 2 , NO, N 2 O, NO 2 or H 2 O; 2 or He, Ne, Ar, Kr
Mixed gas with an inert gas such as O 2 , O 3 , CO,
A mixed gas of CO 2 , NO, N 2 O, NO 2 or a mixed gas of H 2 O and N 2 or an inert gas such as He, Ne, Ar, or Kr can also be used. Even when these gases are used, the effect of the present invention by realizing a low contact resistance can be obtained.
【００１８】また、上記実施例では、上記(5) の熱処理
において、１０ＰａのＯ2 ガス雰囲気を用いたが、Ｏ2
ガスの圧力は、これ以上であっても十分な効果を発揮す
る。例えば、Ｎ2 ガスに対して１％のＯ2 ガスを含ま
せ、そのＯ2 ガスの分圧を１００Ｐａとした雰囲気中で
の熱処理を行ったが、同様の効果が得られた。即ち、圧
力或いは酸素ガスの分圧は、上述した圧力の範囲で全て
適用可能である。[0018] In the above embodiment, in the heat treatment of the above (5), but using O 2 gas atmosphere 10 Pa, O 2
Even if the gas pressure is higher than this, a sufficient effect is exhibited. For example, a heat treatment was performed in an atmosphere in which 1% O 2 gas was contained with respect to N 2 gas and the partial pressure of the O 2 gas was 100 Pa, but the same effect was obtained. That is, the pressure or the partial pressure of the oxygen gas is all applicable within the above-mentioned pressure range.
【００１９】また、上記実施例では、上記(5) の熱処理
において、加熱温度を５７０℃としたが、加熱温度は、
４００〜７００℃の範囲で適用可能であり、望ましく
は、４５０〜６５０℃の範囲が良い。４００℃未満で熱
処理されると、薄膜金属層１１０はオーミック特性を示
さず、７００℃よりも高い温度で熱処理されると、素子
の形に変形が発生しやすくなり、発光や反射光の方向性
に問題が生じる。このため、熱処理温度は、４００〜７
００℃の範囲が良い。In the above embodiment, the heating temperature was set at 570 ° C. in the heat treatment (5).
It is applicable in the range of 400 to 700 ° C, and preferably in the range of 450 to 650 ° C. When the heat treatment is performed at a temperature lower than 400 ° C., the thin-film metal layer 110 does not show the ohmic characteristics. When the heat treatment is performed at a temperature higher than 700 ° C., the shape of the element is easily deformed, and the direction of light emission and reflected light is increased. Problem. Therefore, the heat treatment temperature is 400 to 7
The range of 00 ° C is good.
【００２０】また、上記実施例では、薄膜金属層１１０
は、膜厚約15Åのコバルト(Co)より成る薄膜金属層第１
層１１１と、Coに接合する膜厚約60Åの金(Au)より成る
薄膜金属層第２層１１２とで構成されているが、薄膜金
属層は、プラチナ（Ｐｔ）、コバルト（Ｃｏ）、金（Ａ
ｕ）、パラジウム（Ｐｄ）、ニッケル（Ｎｉ）、マグネ
シウム（Ｍｇ）、銀（Ａｇ）、アルミニウム（Ａｌ）、
バナジウム（Ｖ）、マンガン（Ｍｎ）、ビスマス（Ｂ
ｉ）またはレニウム（Ｒｅ）の内の少なくとも１種類の
金属を含んでいる単層構造の金属層であっても、また、
これらの金属を２種類以上含んだ多層構造の金属層であ
っても本実施例と同様の効果が得られる。In the above embodiment, the thin film metal layer 110
Is a thin film metal layer made of cobalt (Co) having a thickness of about 15 mm.
A layer 111 and a second thin-film metal layer 112 made of gold (Au) having a thickness of about 60 ° bonded to Co. The thin-film metal layer is made of platinum (Pt), cobalt (Co), or gold. (A
u), palladium (Pd), nickel (Ni), magnesium (Mg), silver (Ag), aluminum (Al),
Vanadium (V), manganese (Mn), bismuth (B
i) or a single-layer metal layer containing at least one metal of rhenium (Re),
Even in the case of a metal layer having a multilayer structure containing two or more kinds of these metals, the same effect as in the present embodiment can be obtained.
【００２１】また、上記実施例では、厚膜正電極１２０
は、膜厚約５００Åのニッケル(Ni)より成る厚膜正電極
第１層１２１と、膜厚約５００Åのチタン(Ti)より成る
厚膜正電極第２層１２２と、膜厚約５０００Åのニッケ
ル(Ni)より成る厚膜正電極第３層１２３とを薄膜金属層
１１０の上から順次積層させることにより構成されてい
るが、厚膜正電極は、プラチナ（Ｐｔ）、コバルト（Ｃ
ｏ）、金（Ａｕ）、パラジウム（Ｐｄ）、ニッケル（Ｎ
ｉ）、マグネシウム（Ｍｇ）、銀（Ａｇ）、アルミニウ
ム（Ａｌ）、バナジウム（Ｖ）、銅（Ｃｕ）、スズ（Ｓ
ｎ）またはロジウム（Ｒｈ）の内の少なくとも１種類の
金属を含んでいる単層構造の電極であっても、また、こ
れらの金属を２種類以上含んだ多層構造の電極であって
も本実施例と同様の効果が得られる。In the above embodiment, the thick film positive electrode 120 is used.
A thick positive electrode first layer 121 made of nickel (Ni) having a thickness of about 500 °, a thick positive electrode second layer 122 made of titanium (Ti) having a thickness of about 500 °, and a nickel (Ni) and a third layer 123 of a thick film positive electrode are sequentially laminated on the thin film metal layer 110. The thick film positive electrode is made of platinum (Pt), cobalt (C
o), gold (Au), palladium (Pd), nickel (N
i), magnesium (Mg), silver (Ag), aluminum (Al), vanadium (V), copper (Cu), tin (S
The present invention may be applied to a single-layer electrode containing at least one metal of n) or rhodium (Rh), or a multi-layer electrode containing two or more of these metals. The same effect as the example can be obtained.
【００２２】なお、上記の実施例では、発光素子１００
の活性層１０５はＳＱＷ構造としたが、活性層の構造
は、ＭＱＷ構造でもよい。また、活性層、クラッド層、
コンタクト層、その他の層は、任意の混晶比の４元、３
元、２元系のAlx Gay In1-x-yN （０≦ｘ≦１，０≦ｙ
≦１）としても良い。又、ｐ型不純物としてMgを用いた
がベリリウム(Be)、亜鉛(Zn)等の２族元素を用いること
ができる。In the above embodiment, the light emitting device 100
Although the active layer 105 has an SQW structure, the active layer may have an MQW structure. Also, active layer, cladding layer,
The contact layer and other layers are quaternary, 3 and
, Binary Al x Ga y In 1-xy N (0 ≦ x ≦ 1,0 ≦ y
≤ 1). Although Mg is used as the p-type impurity, a Group 2 element such as beryllium (Be) and zinc (Zn) can be used.
【図１】本発明によるフリップチップ型の半導体発光素
子１００の断面図。FIG. 1 is a cross-sectional view of a flip-chip type semiconductor light emitting device 100 according to the present invention.
【図２】半導体発光素子１００と半導体発光素子３００
の性能比較表。FIG. 2 shows a semiconductor light emitting device 100 and a semiconductor light emitting device 300.
Performance comparison table.
【図３】性能比較を行うために試作された半導体発光素
子３００の断面図。FIG. 3 is a cross-sectional view of a prototype semiconductor light emitting device 300 for performance comparison.
【図４】従来技術によるフリップチップ型の半導体発光
素子４００の断面図。FIG. 4 is a sectional view of a flip-chip type semiconductor light emitting device 400 according to the related art.
１０１…サファイヤ基板 １０２…ＡｌＮバッファ層 １０３…ｎ型のＧａＮ層 １０４…ｎ型のＧａＮクラッド層 １０５…活性層 １０６…ｐ型のＡｌＧａＮクラッド層 １０７…ｐ型のＧａＮコンタクト層 １１０…薄膜金属層 １１１…薄膜金属層第１層 １１２…薄膜金属層第２層 １２０、４２０…厚膜正電極 １２１…厚膜正電極第１層 １２２…厚膜正電極第２層 １２３…厚膜正電極第３層 １３０…保護膜 １４０…多層構造の負電極 DESCRIPTION OF SYMBOLS 101 ... Sapphire substrate 102 ... AlN buffer layer 103 ... n-type GaN layer 104 ... n-type GaN cladding layer 105 ... Active layer 106 ... p-type AlGaN cladding layer 107 ... p-type GaN contact layer 110 ... thin film metal layer 111 ... thin film metal layer first layer 112 ... thin film metal layer second layer 120, 420 ... thick film positive electrode 121 ... thick film positive electrode first layer 122 ... thick film positive electrode second layer 123 ... thick film positive electrode third layer 130: protective film 140: multilayer structure negative electrode
Claims (8)
ら成る層が積層されたフリップチップ型の発光素子にお
いて、 ｐ型半導体側のコンタクト層と前記コンタクト層に接続
する光を反射する厚膜正電極との間に発光ムラの発生を
抑止するための薄膜金属層を設けたことを特徴とする窒
化ガリウム系化合物半導体素子。1. A flip-chip type light-emitting device in which a layer made of a gallium nitride-based compound semiconductor is laminated on a substrate, a thick film positive electrode for reflecting light connected to the p-type semiconductor side contact layer and the contact layer. A gallium nitride-based compound semiconductor device, wherein a thin-film metal layer for suppressing the occurrence of uneven light emission is provided between the gallium nitride-based compound semiconductor device.
０Åであることを特徴とする請求項１に記載の窒化ガリ
ウム系化合物半導体素子。2. The thin film metal layer has a thickness of 50 ° to 50 °.
2. The gallium nitride-based compound semiconductor device according to claim 1, wherein the angle is 0 °.
り形成された多層構造をしていることを特徴とする請求
項１または請求項２に記載の窒化ガリウム系化合物半導
体素子。3. The gallium nitride based compound semiconductor device according to claim 1, wherein the thin film metal layer has a multilayer structure formed of a plurality of types of metals.
り形成された多層構造をしていることを特徴とする請求
項１乃至請求項３のいずれか１項に記載の窒化ガリウム
系化合物半導体素子。4. The gallium nitride-based electrode according to claim 1, wherein the thick film positive electrode has a multilayer structure formed of a plurality of types of metals. Compound semiconductor device.
コバルト（Ｃｏ）、金（Ａｕ）、パラジウム（Ｐｄ）、
ニッケル（Ｎｉ）、マグネシウム（Ｍｇ）、銀（Ａ
ｇ）、アルミニウム（Ａｌ）、バナジウム（Ｖ）、マン
ガン（Ｍｎ）、ビスマス（Ｂｉ）またはレニウム（Ｒ
ｅ）の内の少なくとも１種類の金属を含んでいることを
特徴とする請求項１乃至請求項４のいずれか１項に記載
の窒化ガリウム系化合物半導体素子。5. The thin-film metal layer is formed of platinum (Pt),
Cobalt (Co), gold (Au), palladium (Pd),
Nickel (Ni), magnesium (Mg), silver (A
g), aluminum (Al), vanadium (V), manganese (Mn), bismuth (Bi) or rhenium (R
The gallium nitride-based compound semiconductor device according to any one of claims 1 to 4, further comprising at least one metal selected from the group consisting of (e) and (e).
コバルト（Ｃｏ）、金（Ａｕ）、パラジウム（Ｐｄ）、
ニッケル（Ｎｉ）、マグネシウム（Ｍｇ）、銀（Ａ
ｇ）、アルミニウム（Ａｌ）、バナジウム（Ｖ）、銅
（Ｃｕ）、スズ（Ｓｎ）またはロジウム（Ｒｈ）の内の
少なくとも１種類の金属を含んでいることを特徴とする
請求項１乃至請求項５のいずれか１項に記載の窒化ガリ
ウム系化合物半導体素子。6. The thick-film positive electrode comprises platinum (Pt),
Cobalt (Co), gold (Au), palladium (Pd),
Nickel (Ni), magnesium (Mg), silver (A
g), at least one metal selected from the group consisting of aluminum (Al), vanadium (V), copper (Cu), tin (Sn) and rhodium (Rh). 6. The gallium nitride-based compound semiconductor device according to any one of 5.
ら成る層が積層されたフリップチップ型の発光素子の製
造方法であって、 ｐ型半導体側のコンタクト層に接続する光を反射する厚
膜正電極を形成する前に、前記コンタクト層の上に発光
ムラの発生を抑止するための薄膜金属層を形成し、この
薄膜金属層を熱処理した後に前記厚膜正電極を形成する
ことを特徴とする窒化ガリウム系化合物半導体素子の製
造方法。7. A method for manufacturing a flip-chip type light emitting device in which a layer made of a gallium nitride-based compound semiconductor is laminated on a substrate, comprising: a thick film positive electrode for reflecting light connected to a contact layer on a p-type semiconductor side. Before forming an electrode, a thin metal layer is formed on the contact layer for suppressing emission unevenness, and the thick metal positive electrode is formed after heat treatment of the thin metal layer. A method for manufacturing a gallium nitride-based compound semiconductor device.
行われることを特徴とする請求項７に記載の窒化ガリウ
ム系化合物半導体素子の製造方法。8. The method according to claim 7, wherein the heat treatment is performed in an oxygen (O 2 ) atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3661898A JPH11220168A (en) | 1998-02-02 | 1998-02-02 | Gallium nitride compound semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3661898A JPH11220168A (en) | 1998-02-02 | 1998-02-02 | Gallium nitride compound semiconductor device and manufacture thereof |
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| Publication Number | Publication Date |
|---|---|
| JPH11220168A true JPH11220168A (en) | 1999-08-10 |
Family
ID=12474800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3661898A Pending JPH11220168A (en) | 1998-02-02 | 1998-02-02 | Gallium nitride compound semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11220168A (en) |
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