JPH11171596A - Reflection preventing film - Google Patents
Reflection preventing filmInfo
- Publication number
- JPH11171596A JPH11171596A JP9335909A JP33590997A JPH11171596A JP H11171596 A JPH11171596 A JP H11171596A JP 9335909 A JP9335909 A JP 9335909A JP 33590997 A JP33590997 A JP 33590997A JP H11171596 A JPH11171596 A JP H11171596A
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- Prior art keywords
- film
- refractive index
- index transparent
- transparent film
- thickness
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Surface Treatment Of Optical Elements (AREA)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】ディスプレイ表示面等の反射
防止や帯電防止のために用いられる反射防止膜に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an antireflection film used for preventing reflection or electrification of a display surface of a display or the like.
【０００２】[0002]
【従来の技術】近年、端末オペレータの作業環境の改善
を目的として、ディスプレイ表示面の反射低減やＣＲＴ
（陰極線管）の帯電防止、さらに表示面の透過率を適正
化するための技術が求められている。そして、そのよう
な技術として、ディスプレイの前面に導電性を有する反
射防止膜を設けることが行われている。2. Description of the Related Art In recent years, for the purpose of improving the working environment of a terminal operator, it has been proposed to reduce reflection on a display surface of a display or to use a CRT.
There is a need for a technique for preventing electrification of a (cathode ray tube) and optimizing the transmittance of a display surface. As such a technique, a conductive antireflection film is provided on the front surface of the display.
【０００３】この反射防止膜にはいくつかの構成が提案
されており、例えば特開平９−１５６９６４号公報で
は、基体上に光吸収膜が形成され、この上にシリカ膜を
形成した反射防止膜が提案されている。Several configurations have been proposed for this antireflection film. For example, in Japanese Patent Application Laid-Open No. 9-156964, a light absorption film is formed on a substrate, and a silica film is formed thereon. Has been proposed.
【０００４】この反射防止膜において光吸収膜は、可視
光域における屈折率ｎや消衰係数ｋの波長依存性の点か
ら選択され、例えば窒化チタン膜が用いられる。この反
射防止膜は、このような光吸収膜とシリカ膜を組み合わ
せることによって、広い波長範囲で低反射特性が得られ
るようにしている。In this antireflection film, the light absorbing film is selected from the viewpoint of the wavelength dependence of the refractive index n and the extinction coefficient k in the visible light region. For example, a titanium nitride film is used. The antireflection film is configured to obtain low reflection characteristics over a wide wavelength range by combining such a light absorbing film and a silica film.
【０００５】しかし、この光吸収膜となる窒化チタン
は、窒素ガスと希ガスを主成分とするスパッタガスを用
いるスパッタリング法によって成膜されるが、このスパ
ッタガスの混合比の変動によって低反射領域が狭くなっ
たり、所望の表面抵抗値が得られなくなったりし、安定
な特性が得られない。[0005] However, titanium nitride to be a light absorbing film is formed by a sputtering method using a sputtering gas containing nitrogen gas and a rare gas as main components. Becomes narrow, a desired surface resistance value cannot be obtained, and stable characteristics cannot be obtained.
【０００６】また、この反射防止膜では、光吸収膜の膜
厚を余り厚くすると適正な透過率が得られなくなること
から、シリカ膜の膜厚によって反射率を制御せざるを得
ない。ところが、シリカ膜の方の膜厚を厚くしていくと
反射率曲線が長波長側にシフトし、反射色の青色が強く
なってしまう。また、シリカ膜の膜厚を制御するだけで
は低反射率領域を広くするのが難しい。In this antireflection film, if the thickness of the light absorbing film is too large, an appropriate transmittance cannot be obtained, so that the reflectance must be controlled by the thickness of the silica film. However, as the thickness of the silica film is increased, the reflectance curve shifts to longer wavelengths, and the reflected color blue becomes stronger. Further, it is difficult to widen the low reflectance region only by controlling the thickness of the silica film.
【０００７】さらにこの他の問題として量産プロセスに
導入したときの特性劣化の問題がある。例えば窒化チタ
ン膜は、量産プロセスでは各層を成膜するためのスパッ
タ室がライン状に配設されたインライン型スパッタリン
グ装置によって成膜されるが、この場合窒化チタン膜を
成膜するためのスパッタ室に酸素ガスが混入し易く、酸
窒化チタン膜が成膜される可能性がある。酸窒化チタン
膜となると、低反射特性が低下し、比抵抗が必要以上に
上昇してしまう。As another problem, there is a problem of characteristic deterioration when introduced into a mass production process. For example, in a mass production process, a titanium nitride film is formed by an inline type sputtering apparatus in which a sputter chamber for forming each layer is arranged in a line. In this case, a sputter chamber for forming a titanium nitride film is used. Oxygen gas is likely to be mixed into the film, and a titanium oxynitride film may be formed. In the case of a titanium oxynitride film, the low-reflection characteristics decrease, and the specific resistance increases more than necessary.
【０００８】また、反射防止膜としては透明膜を多数積
層することによって広い波長帯域で低反射特性が得られ
るようにした多層透明膜と、導電性を付与するためのＩ
ＴＯ（インジウム錫酸化物）透明導電膜、さらに光吸収
性を付与するための金属膜を組み合わせた反射防止膜も
報告されている。[0008] Further, as an antireflection film, a multilayer transparent film in which a large number of transparent films are laminated to obtain low reflection characteristics in a wide wavelength band, and an I / O film for imparting conductivity.
An anti-reflection film combining a TO (indium tin oxide) transparent conductive film and a metal film for imparting light absorption has also been reported.
【０００９】しかし、ＩＴＯ透明導電膜のスパッタによ
る成膜過程では、ターゲット表面にノジュールと称され
る黒色突起物が成長してくるため連続稼働を行うことが
できない。このため、生産性の点で問題がある。However, in the process of forming the ITO transparent conductive film by sputtering, continuous operation cannot be performed because black protrusions called nodules grow on the target surface. For this reason, there is a problem in terms of productivity.
【００１０】また、多層透明膜と、銀膜を組み合わせた
６層構成の反射防止膜も提案されている。この反射防止
膜は、銀膜が導電性と吸収性を併せ持つためＩＴＯ透明
導電膜を不要にできるが、低反射特性が得られる波長領
域が狭い。[0010] An antireflection film having a six-layer structure in which a multilayer transparent film and a silver film are combined has also been proposed. This antireflection film can eliminate the need for an ITO transparent conductive film because the silver film has both conductivity and absorptivity, but has a narrow wavelength range in which low reflection characteristics can be obtained.
【００１１】[0011]
【発明が解決しようとする課題】このように、これまで
提案されている反射防止膜は、低反射特性や導電性が十
分であるとは言えず、また量産に適さないといった問題
があり、さらなる改良が望まれる。As described above, the antireflection films proposed so far have problems such that they cannot be said to have sufficient low-reflection characteristics and conductivity and are not suitable for mass production. Improvement is desired.
【００１２】そこで、本発明はこのような従来の実情に
鑑みて提案されたものであり、広い波長帯域で反射率が
低く、また導電性に優れ基材の帯電を防止でき、さらに
量産プロセスで作製した場合でも安定な性能が得られる
反射防止膜を提供することを目的とする。Therefore, the present invention has been proposed in view of such a conventional situation, and has a low reflectance over a wide wavelength band, has excellent conductivity, can prevent the substrate from being charged, and can be used in a mass production process. It is an object of the present invention to provide an antireflection film capable of obtaining stable performance even when manufactured.
【００１３】[0013]
【課題を解決するための手段】上述の目的を達成するた
めに、本発明の反射防止膜は基材のための反射防止膜で
あって、基材に近い側に導電性光吸収膜が形成され、こ
の上に高屈折率透明膜と低屈折率透明膜がこの順で交互
にそれぞれ複数層形成されてなることを特徴とするもの
である。In order to achieve the above object, the antireflection film of the present invention is an antireflection film for a substrate, and a conductive light absorbing film is formed on a side close to the substrate. Further, a high refractive index transparent film and a low refractive index transparent film are alternately formed in this order on a plurality of layers, respectively.
【００１４】また、基材のための反射防止膜であって、
基材に近い側から導電性光吸収膜、第１の高屈折率透明
膜、第１の低屈折率透明膜、第２の高屈折率透明膜、第
２の低屈折率透明膜がこの順に形成されてなり、導電性
光吸収膜の膜厚が５〜２５ｎｍ、第１の高屈折率透明膜
の膜厚が１５〜３０ｎｍ、第１の低屈折率透明膜の膜厚
が１５〜３０ｎｍ、第２の高屈折率透明膜の膜厚が１０
０〜１４０ｎｍ、第２の低屈折率透明膜の膜厚が６０〜
１２０ｎｍであることを特徴とするものである。An anti-reflection film for a substrate,
From the side close to the substrate, the conductive light absorbing film, the first high refractive index transparent film, the first low refractive index transparent film, the second high refractive index transparent film, and the second low refractive index transparent film are arranged in this order. The conductive light absorbing film has a thickness of 5 to 25 nm, the first high refractive index transparent film has a thickness of 15 to 30 nm, the first low refractive index transparent film has a thickness of 15 to 30 nm, The thickness of the second high refractive index transparent film is 10
0 to 140 nm, and the thickness of the second low refractive index transparent film is 60 to 140 nm.
The thickness is 120 nm.
【００１５】さらに、基材のための反射防止膜であっ
て、基材に近い側から導電性光吸収膜、第１の高屈折率
透明膜、第１の低屈折率透明膜、第２の高屈折率透明
膜、第２の低屈折率透明膜、第３の高屈折率透明膜、第
３の低屈折率透明膜がこの順に形成されてなり、導電性
光吸収性膜の膜厚が５〜２５ｎｍ、第１の高屈折率透明
膜の膜厚が２０〜４０ｎｍ、第１の低屈折率透明膜の膜
厚が５〜３０ｎｍ、第２の高屈折率透明膜の膜厚が５０
〜９０ｎｍ、第２の低屈折率透明膜の膜厚が１〜２０ｎ
ｍ、第３の高屈折率透明膜の膜厚が３０〜５０ｎｍ、第
３の低屈折率透明膜の膜厚が６０〜１２０ｎｍであるこ
とを特徴とするものである。Further, an antireflection film for the base material, wherein the conductive light absorbing film, the first high refractive index transparent film, the first low refractive index transparent film, the second A high refractive index transparent film, a second low refractive index transparent film, a third high refractive index transparent film, and a third low refractive index transparent film are formed in this order. 5-25 nm, the thickness of the first high refractive index transparent film is 20-40 nm, the thickness of the first low refractive index transparent film is 5-30 nm, and the thickness of the second high refractive index transparent film is 50.
90 nm, the thickness of the second low refractive index transparent film is 1-20 n
m, the thickness of the third high refractive index transparent film is 30 to 50 nm, and the thickness of the third low refractive index transparent film is 60 to 120 nm.
【００１６】このような反射防止膜を基材にコーティン
グすると、１層目に設けられた導電性光吸収膜の導電性
によって基材の帯電が防止される。さらに、この反射防
止膜は空気との光学的境界面における屈折率が低く、ま
た導電性光吸収膜で光が吸収されることから入射光の反
射が防止される。そして特にこの反射防止膜は、高屈折
率透明膜と低屈折率透明膜が交互にそれぞれ複数層形成
されているので、導電性光吸収膜に不純物の混入があっ
たとしても、これら透明膜の膜厚を制御することによっ
て光学定数が容易に補正される。When the substrate is coated with such an antireflection film, the substrate is prevented from being charged by the conductivity of the conductive light absorbing film provided as the first layer. Further, the antireflection film has a low refractive index at an optical boundary surface with air, and since the light is absorbed by the conductive light absorbing film, reflection of incident light is prevented. In particular, since this antireflection film is formed by alternately forming a plurality of high-refractive-index transparent films and a plurality of low-refractive-index transparent films, even if impurities are mixed into the conductive light-absorbing film, the antireflection film is formed of these transparent films. The optical constant is easily corrected by controlling the film thickness.
【００１７】[0017]
【発明の実施の形態】以下、本発明の具体的な実施の形
態について説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described.
【００１８】本発明に係る反射防止膜の第１の実施の形
態を図１に示す。FIG. 1 shows a first embodiment of the antireflection film according to the present invention.
【００１９】この反射防止膜は、基材１のための反射防
止膜であって、基材１に近い側から導電性光吸収膜２、
第１の高屈折率透明膜３、第１の低屈折率透明膜４、第
２の高屈折率透明膜５、第２の低屈折率透明膜６がこの
順に形成されてなる。This anti-reflection film is an anti-reflection film for the substrate 1, and the conductive light absorbing film 2,
The first high refractive index transparent film 3, the first low refractive index transparent film 4, the second high refractive index transparent film 5, and the second low refractive index transparent film 6 are formed in this order.
【００２０】上記導電性光吸収膜２としては、窒化チタ
ン等が用いられる。As the conductive light absorbing film 2, titanium nitride or the like is used.
【００２１】また、上記第１の高屈折率透明膜３、第２
の高屈折率透明膜５、第１の低屈折率透明膜４、第２の
低屈折率透明膜６としては、可視光域において透明で、
且つ第１の高屈折率透明膜３及び第２の高屈折率透明膜
５が、第１の低屈折率透明膜４び第２の低屈折率透明膜
６よりも屈折率が高くなるような材料が選択される。具
体的には、第１の高屈折率透明膜３及び第２の高屈折率
透明膜５には酸化チタンＴｉＯ2，酸化ニオブＮｂ2Ｏ5
等が用いられ、特にスパッタリング法によって成膜を行
う場合にはスパッタレートの高いＮｂ2Ｏ5を用いるのが
望ましい。また、第１の低屈折率透明膜４及び第２の低
屈折率透明膜６にはシリカＳｉＯ2等が用いられる。Further, the first high refractive index transparent film 3 and the second
The high refractive index transparent film 5, the first low refractive index transparent film 4, and the second low refractive index transparent film 6 are transparent in the visible light range,
In addition, the first high refractive index transparent film 3 and the second high refractive index transparent film 5 have higher refractive indexes than the first low refractive index transparent film 4 and the second low refractive index transparent film 6. Material is selected. Specifically, the first high refractive index transparent film 3 and the second high refractive index transparent film 5 are made of titanium oxide TiO 2 and niobium oxide Nb 2 O 5.
In particular, when a film is formed by a sputtering method, it is desirable to use Nb 2 O 5 having a high sputtering rate. The first low refractive index transparent film 4 and the second low refractive index transparent film 6 are made of silica SiO 2 or the like.
【００２２】これら各層は、スパッタリング法や真空蒸
着法のような物理気相成長法やＣＶＤ法（化学気相成長
法）、ゾルゲル法等によって成膜される。特に、ＤＣス
パッタリング法は、膜厚の制御が比較的容易であるこ
と、大面積基板に対する成膜に適すること、インライン
型の装置を用いることによって多層膜が容易に成膜でき
ることといった利点を有する。Each of these layers is formed by a physical vapor deposition method such as a sputtering method or a vacuum evaporation method, a CVD method (chemical vapor deposition method), a sol-gel method, or the like. In particular, the DC sputtering method has advantages such as relatively easy control of film thickness, suitability for film formation on a large-area substrate, and easy formation of a multilayer film by using an in-line type device.
【００２３】但し、この５層構成の反射防止膜において
各層の膜厚は、導電性光吸収膜２が５〜２５ｎｍ、第１
の高屈折率透明膜３が１５〜３０ｎｍ、第１の低屈折率
透明膜４が１５〜３０ｎｍ、第２の高屈折率透明膜５が
１００〜１４０ｎｍ、第２の低屈折率膜６が６０〜１２
０ｎｍとされる。なお、この膜厚は、膜の物理的な厚み
である。However, in the antireflection film having the five-layer structure, the thickness of each layer is 5 to 25 nm for the conductive light absorbing film 2,
The high refractive index transparent film 3 is 15 to 30 nm, the first low refractive index transparent film 4 is 15 to 30 nm, the second high refractive index transparent film 5 is 100 to 140 nm, and the second low refractive index film 6 is 60 nm. ~ 12
0 nm. This film thickness is the physical thickness of the film.
【００２４】この構成の反射防止膜には付加的に、導電
性光吸収膜２と第１の高屈折率透明膜３の間に、金属や
金属窒化物等よりなる酸化バリア層を介在させるように
しても良い。導電性光吸収膜２の上に酸化チタン等より
なる第１の高屈折率透明膜３を直接成膜した場合、第１
の高屈折率透明膜３の成膜過程で導電性光吸収膜２が酸
化され、導電性や光学特性が損なわれる可能性がある。
これに対して、導電性光吸収膜２の上に酸化バリア層を
設け、この上に第１の高屈折率透明膜３を成膜すればこ
のような導電性光吸収膜２の酸化が防止される。In the antireflection film having this structure, an oxide barrier layer made of metal, metal nitride, or the like is additionally provided between the conductive light absorbing film 2 and the first high refractive index transparent film 3. You may do it. When the first high-refractive-index transparent film 3 made of titanium oxide or the like is directly formed on the conductive light absorbing film 2, the first
The conductive light-absorbing film 2 may be oxidized during the process of forming the high-refractive-index transparent film 3, and the conductivity and optical characteristics may be impaired.
On the other hand, if the oxidation barrier layer is provided on the conductive light absorbing film 2 and the first high refractive index transparent film 3 is formed thereon, the oxidation of the conductive light absorbing film 2 is prevented. Is done.
【００２５】この酸化バリア層は膜厚が１〜２０ｎｍで
あるのが望ましい。酸化バリア層の膜厚が１ｎｍ未満で
ある場合には導電性光吸収膜の酸化を十分に防止するこ
とができない。逆に酸化バリア層の膜厚が２０ｎｍを超
えると、反射防止性能が損なわれる虞れがある。This oxidation barrier layer preferably has a thickness of 1 to 20 nm. If the thickness of the oxidation barrier layer is less than 1 nm, the oxidation of the conductive light absorbing film cannot be sufficiently prevented. Conversely, if the thickness of the oxidation barrier layer exceeds 20 nm, the antireflection performance may be impaired.
【００２６】このような反射防止膜は基材１にコーティ
ングされることによって当該基材１の反射や帯電を防止
するものであり、例えばディスプレイの表示面にコーテ
ィングされて好適である。このディスプレイ用表示面は
ガラス基板、プラスティック基板、プラスティックフィ
ルムのいずれで構成されていても良い。Such an anti-reflection film prevents the reflection and charging of the substrate 1 by being coated on the substrate 1, and is preferably coated on the display surface of a display, for example. The display surface for a display may be formed of any of a glass substrate, a plastic substrate, and a plastic film.
【００２７】これらの基材１に反射防止膜をコーティン
グすると、１層目に設けられた導電性光吸収膜２の導電
性によって基材１の帯電が防止される。さらに、この反
射防止膜は空気との光学的境界面における屈折率が低
く、また導電性光吸収膜２で光が吸収されることから入
射光の反射が防止される。特に、この反射防止膜は、高
屈折率透明膜３，５と低屈折率透明膜４，６が交互にそ
れぞれ複数層形成されているので、例えばＴｉＮ等より
なる光吸収膜２に酸素等の混入があったとしても、これ
ら透明膜３，４，５，６の膜厚を上述の範囲内で制御す
ることによって適正な光学定数に補正される。When the base material 1 is coated with an antireflection film, the conductivity of the base material 1 is prevented by the conductivity of the conductive light absorbing film 2 provided in the first layer. Further, the antireflection film has a low refractive index at an optical boundary surface with air, and since the light is absorbed by the conductive light absorbing film 2, reflection of incident light is prevented. In particular, since this antireflection film is formed by alternately forming a plurality of high-refractive-index transparent films 3 and 5 and low-refractive-index transparent films 4 and 6, respectively, the light-absorbing film 2 made of TiN or the like has Even if there is contamination, by controlling the film thickness of these transparent films 3, 4, 5, 6 within the above-mentioned range, it is corrected to an appropriate optical constant.
【００２８】なお、この反射防止膜が特にディスプレイ
の表示面にコーティングされる場合には、波長帯域が４
３０〜６５０ｎｍ（可視光域）の光を第２の低屈折率透
明膜６側から入射させたときの反射率が０．６％未満、
反射防止膜表面の電気抵抗が１ｋΩ／□以下となるよう
に各層の材料や膜厚等を選択するのが望ましい。これに
より、ディスプレイの画質や視認性が改善される。ま
た、コントラスト向上のためには、波長帯域が４３０〜
６５０ｎｍの光に対する反射防止膜の透過率が６０〜９
０％であるのが望ましい。When this antireflection film is coated particularly on the display surface of a display, the wavelength band is 4.
A reflectance of less than 0.6% when light of 30 to 650 nm (visible light range) is incident from the second low refractive index transparent film 6 side;
It is desirable to select the material and thickness of each layer so that the electric resistance of the surface of the antireflection film is 1 kΩ / □ or less. Thereby, the image quality and visibility of the display are improved. Further, in order to improve the contrast, the wavelength band is 430 to 430.
The transmittance of the antireflection film for light of 650 nm is 60 to 9
Desirably, it is 0%.
【００２９】次に、本発明に係る反射防止膜の第２の実
施の形態を図２に示す。Next, a second embodiment of the antireflection film according to the present invention is shown in FIG.
【００３０】この反射防止膜は、基材１１のための反射
防止膜であって、基材１１に近い側から導電性光吸収膜
１２、第１の高屈折率透明膜１３、第１の低屈折率透明
膜１４、第２の高屈折率透明膜１５、第２の低屈折率透
明膜１６、第３の高屈折率透明膜１７、第３の低屈折率
透明膜１８がこの順に形成されてなる。This anti-reflection film is an anti-reflection film for the substrate 11, and the conductive light absorbing film 12, the first high refractive index transparent film 13, the first low The refractive index transparent film 14, the second high refractive index transparent film 15, the second low refractive index transparent film 16, the third high refractive index transparent film 17, and the third low refractive index transparent film 18 are formed in this order. It becomes.
【００３１】上記導電性光吸収膜１２、第１の高屈折率
透明膜１３〜第３の高屈折率透明膜１７、第１の低屈折
率透明膜１４〜第３の低屈折率透明膜１８の材料として
は、第１の実施の形態の反射防止膜において導電性光吸
収膜２、第１の高屈折率透明膜３〜第２の高屈折率透明
膜５、第１の低屈折率透明膜４〜第２の低屈折率透明膜
６の材料として例示したものがそれぞれ使用可能であ
る。The conductive light absorbing film 12, the first high refractive index transparent film 13 to the third high refractive index transparent film 17, the first low refractive index transparent film 14 to the third low refractive index transparent film 18, Examples of the material include the conductive light absorbing film 2, the first high refractive index transparent film 3 to the second high refractive index transparent film 5, the first low refractive index transparent film in the antireflection film of the first embodiment. The materials exemplified as the materials of the film 4 to the second low refractive index transparent film 6 can be used.
【００３２】但し、この７層構成の反射防止膜において
各層の膜厚は、導電性光吸収膜１２が５〜２５ｎｍ、第
１の高屈折率透明膜１３が２０〜４０ｎｍ、第１の低屈
折率透明膜１４が５〜３０ｎｍ、第２の高屈折率透明膜
１５が５０〜９０ｎｍ、第２の低屈折率透明膜１６が１
〜２０ｎｍ、第３の高屈折率透明膜１７が３０〜５０ｎ
ｍ、第３の低屈折率透明膜１８が６０〜１２０ｎｍとさ
れる。なお、この膜厚は、膜の物理的な厚みである。The thickness of each layer in the seven-layer antireflection film is 5-25 nm for the conductive light absorbing film 12, 20-40 nm for the first high refractive index transparent film 13, and the first low refractive index. Transparent film 14 is 5 to 30 nm, second high refractive index transparent film 15 is 50 to 90 nm, and second low refractive index transparent film 16 is 1
20 nm, the third high refractive index transparent film 17 is 30-50 n
m, the third low-refractive-index transparent film 18 has a thickness of 60 to 120 nm. This film thickness is the physical thickness of the film.
【００３３】この構成の反射防止膜にも導電性光吸収膜
１２と第１の高屈折率透明膜１３の間に付加的に、金属
や金属窒化物等よりなる酸化バリア層を介在させるよう
にしても良い。導電性光吸収膜１２の上に酸化チタン等
よりなる第１の高屈折率透明膜１３を直接成膜した場
合、第１の高屈折率透明膜１３の成膜過程で導電性光吸
収膜が酸化され、導電性や光学特性が損なわれる可能性
がある。これに対して、導電性光吸収膜１２の上に酸化
バリア層を設け、この上に第１の高屈折率透明膜１３を
成膜すればこのような導電性光吸収膜１２の酸化が防止
される。In the antireflection film having this structure, an oxide barrier layer made of metal, metal nitride, or the like is additionally provided between the conductive light absorbing film 12 and the first high refractive index transparent film 13. May be. When the first high refractive index transparent film 13 made of titanium oxide or the like is directly formed on the conductive light absorbing film 12, the conductive light absorbing film is It may be oxidized and the conductivity and optical properties may be impaired. On the other hand, if the oxidation barrier layer is provided on the conductive light absorbing film 12 and the first high refractive index transparent film 13 is formed thereon, the oxidation of the conductive light absorbing film 12 is prevented. Is done.
【００３４】この酸化バリア層は膜厚が１〜２０ｎｍで
あるのが望ましい。酸化バリア層の膜厚が１ｎｍ未満で
ある場合には導電性光吸収膜１２の酸化を十分に防止す
ることができない。逆に酸化バリア層の膜厚が２０ｎｍ
を超えると、反射防止膜の反射防止性能が損なわれる虞
れがある。This oxidation barrier layer preferably has a thickness of 1 to 20 nm. If the thickness of the oxidation barrier layer is less than 1 nm, the oxidation of the conductive light absorbing film 12 cannot be sufficiently prevented. Conversely, the thickness of the oxidation barrier layer is 20 nm.
If it exceeds 3, the antireflection performance of the antireflection film may be impaired.
【００３５】このような反射防止膜は基材１１にコーテ
ィングされることによって当該基材の反射や帯電を防止
するものであり、例えばディスプレイ用表示面にコーテ
ィングされて好適である。このディスプレイ用表示面は
ガラス基板、プラスティック基板、プラスティックフィ
ルムのいずれで構成されていても良い。Such an anti-reflection film prevents the reflection and charging of the substrate by being coated on the substrate 11, and is preferably coated on, for example, a display surface of a display. The display surface for a display may be formed of any of a glass substrate, a plastic substrate, and a plastic film.
【００３６】これらの基材１１に反射防止膜をコーティ
ングすると、１層目に設けられた導電性光吸収膜１２の
導電性によって基材の帯電が防止される。さらに、この
反射防止膜は空気との光学的境界面における屈折率が低
く、また導電性光吸収膜１２で光が吸収されることから
入射光の反射が防止される。特に、この反射防止膜は、
高屈折率透明膜１３，１５，１７と低屈折率透明膜１
４，１６，１８が交互にそれぞれ複数層形成されている
ので、ＴｉＮ膜に酸素等の混入があったとしても、これ
ら透明膜の膜厚を上述の範囲内で制御することによって
適正な光学定数に補正される。When the base material 11 is coated with an antireflection film, the conductivity of the base material is prevented by the conductivity of the conductive light absorbing film 12 provided as the first layer. Further, the antireflection film has a low refractive index at an optical boundary surface with air, and since the light is absorbed by the conductive light absorbing film 12, reflection of incident light is prevented. In particular, this antireflection film
High refractive index transparent films 13, 15, 17 and low refractive index transparent film 1
Since a plurality of layers of 4, 16, and 18 are alternately formed, even if oxygen or the like is mixed in the TiN film, by controlling the film thickness of these transparent films within the above range, an appropriate optical constant can be obtained. Is corrected to
【００３７】なお、この反射防止膜が特にディスプレイ
の表示面にコーティングされる場合には、波長帯域が４
３０〜６５０ｎｍ（可視光域）の光を第２の低屈折率透
明膜側から入射させたときの反射率が０．６％未満、反
射防止膜表面の電気抵抗が１ｋΩ／□以下となるように
各層の材質や膜厚等を選択するのが望ましい。これによ
り、ディスプレイの画質や視認性が改善される。また、
コントラスト向上のためには、波長帯域が４３０〜６５
０ｎｍの光に対する反射防止膜の透過率が６０〜９０％
であるのが望ましい。When the antireflection film is coated particularly on the display surface of a display, the wavelength band is 4.
When the light of 30 to 650 nm (visible light range) is incident from the second low refractive index transparent film side, the reflectance is less than 0.6%, and the electric resistance of the antireflection film surface is 1 kΩ / □ or less. It is desirable to select the material and thickness of each layer. Thereby, the image quality and visibility of the display are improved. Also,
To improve the contrast, the wavelength band is 430 to 65
60% to 90% transmittance of the antireflection film for 0 nm light
It is desirable that
【００３８】以上、本発明の反射防止膜の実施の形態と
して、導電性光吸収膜上に高屈折率透明膜と低屈折率透
明膜とが交互にそれぞれ２層形成された反射防止膜と、
導電性光吸収膜上に高屈折率透明膜と低屈折率透明膜と
が交互にそれぞれ３層形成された反射防止膜について説
明したが、さらに高屈折率透明膜と低屈折率透明膜の積
層数を増やしても良い。高屈折率透明膜と低屈折率透明
膜の積層数を多くすることによって反射率の調整がより
容易になり、高い反射防止性能が得られるようになる。
但し、高屈折率透明膜と低屈折率透明膜の適正な膜厚は
積層数によって異なるので積層数に応じた適正な膜厚で
形成するのが望ましい。As described above, as an embodiment of the antireflection film of the present invention, an antireflection film in which two high-refractive-index transparent films and two low-refractive-index transparent films are alternately formed on a conductive light-absorbing film,
The antireflection film in which the high refractive index transparent film and the low refractive index transparent film are alternately formed in three layers on the conductive light absorbing film has been described, however, a laminate of the high refractive index transparent film and the low refractive index transparent film is further laminated. The number may be increased. By increasing the number of layers of the high-refractive-index transparent film and the low-refractive-index transparent film, the adjustment of the reflectance becomes easier, and high antireflection performance can be obtained.
However, since the appropriate film thickness of the high refractive index transparent film and the low refractive index transparent film differs depending on the number of layers, it is desirable to form them with an appropriate film thickness according to the number of layers.
【００３９】[0039]
【実施例】以下、本発明の具体的な実施例について実験
結果に基づいて説明する。EXAMPLES Hereinafter, specific examples of the present invention will be described based on experimental results.
【００４０】実施例１ この実施例は、ガラス基材上にコーティングされた導電
性光吸収膜、第１の高屈折率透明膜、第１の低屈折率透
明膜、第２の高屈折率透明膜、第２の低屈折率透明膜よ
りなる反射防止膜の例である。材料構成は以下の通りで
ある。また、各層の膜厚は、第２の低屈折率透明膜側か
ら波長５５０ｎｍの光を入射させたときの透過率が８０
％となるように設計した。 Example 1 In this example, a conductive light absorbing film coated on a glass substrate, a first high refractive index transparent film, a first low refractive index transparent film, and a second high refractive index transparent film were coated. This is an example of an antireflection film made of a film and a second low refractive index transparent film. The material composition is as follows. The thickness of each layer is such that the transmittance when light of a wavelength of 550 nm is incident from the second low refractive index transparent film side is 80%.
%.
【００４１】反射防止膜の材料構成 導電性光吸収膜 ：ＴｉＮ膜 （膜厚８ｎｍ） 第１の高屈折率透明膜：ＴｉＯ2膜（膜厚２２ｎｍ） 第１の低屈折率透明膜：ＳｉＯ2膜（膜厚２２ｎｍ） 第２の高屈折率透明膜：ＴｉＯ2膜（膜厚１２０ｎｍ） 第２の低屈折率透明膜：ＳｉＯ2膜（膜厚９２ｎｍ） この反射防止膜の第２の低屈折率透明膜側から光を入射
させたときの反射率特性を図３に示す。なお、この反射
率特性は、次のような条件でＴｉＮ膜、ＴｉＯ2膜、Ｓ
ｉＯ2膜を成膜し、これらについて測定した光学定数に
基づいて求めたものである。Material composition of antireflection film Conductive light absorbing film: TiN film (8 nm thick) First high refractive index transparent film: TiO 2 film (22 nm thick) First low refractive index transparent film: SiO 2 Film (film thickness: 22 nm) Second high refractive index transparent film: TiO 2 film (film thickness: 120 nm) Second low refractive index transparent film: SiO 2 film (film thickness: 92 nm) Second low refractive index of this antireflection film FIG. 3 shows the reflectance characteristics when light is incident from the transparent film side. The reflectivity characteristics of the TiN film, TiO 2 film, S
The iO 2 films were formed and determined based on the optical constants measured for these films.
【００４２】 ＴｉＮ膜の成膜条件 成膜方法 ：ＤＣリアクティブスパッタリング法 ターゲッット ：チタン 放電ガス ：アルゴンと窒素の混合ガス（窒素１５体積％） スパッタガス圧：３×１０-3Ｔｏｒｒ ＴｉＯ2膜の成膜条件 成膜方法 ：ＤＣリアクティブスパッタリング法 ターゲット ：チタン 放電ガス ：酸素 スパッタガス圧：３×１０-3Ｔｏｒｒ ＳｉＯ2膜の成膜条件 成膜方法 ：ＤＣリアクティブスパッタリング法 ターゲット ：シリコン（アルミ１０重量％ドープ） 放電ガス ：酸素 スパッタガス圧：３×１０-3Ｔｏｒｒ 図３に示すように、この５層構成の反射防止膜は、可視
光域４３０〜６５０ｎｍでの最大反射率が０．４２％、
平均反射率が０．１３％であり十分な反射防止性能を有
する。Film forming conditions of TiN film Film forming method: DC reactive sputtering method Target: titanium Discharge gas: mixed gas of argon and nitrogen (nitrogen 15 vol%) Sputter gas pressure: 3 × 10 −3 Torr TiO 2 film Film formation conditions Film formation method: DC reactive sputtering method Target: titanium Discharge gas: oxygen Sputter gas pressure: 3 × 10 −3 Torr SiO 2 film film formation conditions Film formation method: DC reactive sputtering method Target: silicon (aluminum) Discharge gas: oxygen Sputter gas pressure: 3 × 10 −3 Torr As shown in FIG. 3, this antireflection film having a five-layer structure has a maximum reflectance of 0.4 in the visible light range of 430 to 650 nm. 42%,
The average reflectance is 0.13%, which means that it has sufficient antireflection performance.
【００４３】実施例２ この実施例は、ガラス基材上にコーティングされた導電
性光吸収膜、第１の高屈折率透明膜、第１の低屈折率透
明膜、第２の高屈折率透明膜、第２の低屈折率透明膜、
第３の高屈折率透明膜、第３の低屈折率透明膜よりなる
反射防止膜の例である。材料構成は以下の通りである。
各層の膜厚は、第２の低屈折率透明膜側から波長５５０
ｎｍの光を入射させたときの透過率が８０％となるよう
に設計した。 Example 2 In this example, a conductive light absorbing film coated on a glass substrate, a first high refractive index transparent film, a first low refractive index transparent film, and a second high refractive index transparent film were used. Film, a second low refractive index transparent film,
This is an example of an antireflection film made of a third high refractive index transparent film and a third low refractive index transparent film. The material composition is as follows.
Each layer has a wavelength of 550 from the second low refractive index transparent film side.
The design was such that the transmittance when light of nm was incident was 80%.
【００４４】反射防止膜の材料構成 導電性光吸収膜 ：ＴｉＮ膜 （膜厚１０ｎｍ） 第１の高屈折率透明膜：ＴｉＯ2膜（膜厚２８ｎｍ） 第１の低屈折率透明膜：ＳｉＯ2膜（膜厚１６ｎｍ） 第２の高屈折率透明膜：ＴｉＯ2膜（膜厚７０ｎｍ） 第２の低屈折率透明膜：ＳｉＯ2膜（膜厚７ｎｍ） 第３の高屈折率透明膜：ＴｉＯ2膜（膜厚４０ｎｍ） 第３の低屈折率透明膜：ＳｉＯ2膜（膜厚９５ｎｍ） この反射防止膜の第３の低屈折率透明膜側から光を入射
させたときの反射率特性を図４に示す。なお、この反射
率特性は、実施例１と同様にして測定した光学定数に基
づいて求めたものである。Material composition of antireflection film Conductive light absorbing film: TiN film (10 nm thick) First high refractive index transparent film: TiO 2 film (28 nm thick) First low refractive index transparent film: SiO 2 Film (16 nm thick) Second high refractive index transparent film: TiO 2 film (70 nm thick) Second low refractive index transparent film: SiO 2 film (7 nm thick) Third high refractive index transparent film: TiO 2 film (thickness: 40 nm) Third low-refractive-index transparent film: SiO 2 film (95 nm-thickness) The reflectance characteristic when light is incident from the third low-refractive-index transparent film side of this antireflection film is described below. As shown in FIG. The reflectance characteristics were obtained based on optical constants measured in the same manner as in Example 1.
【００４５】図４に示すように、この７層構成の反射防
止膜は、可視光域４３０〜６５０ｎｍでの最大反射率が
０．２６％、平均反射率が０．１１％であり十分な反射
防止性能を有する。As shown in FIG. 4, the antireflection film having the seven-layer structure has a maximum reflectance of 0.26% and an average reflectance of 0.11% in the visible light range of 430 to 650 nm, and has a sufficient reflection. Has prevention performance.
【００４６】実施例３ この実施例は、ガラス基材上にコーティングされた導電
性光吸収膜、第１の高屈折率透明膜、第１の低屈折率透
明膜、第２の高屈折率透明膜、第２の低屈折率透明膜、
第３の高屈折率透明膜、第３の低屈折率透明膜よりなる
反射防止膜の例である。材料構成は以下の通りである。 Example 3 In this example, a conductive light absorbing film coated on a glass substrate, a first high refractive index transparent film, a first low refractive index transparent film, and a second high refractive index transparent film were coated. Film, a second low refractive index transparent film,
This is an example of an antireflection film made of a third high refractive index transparent film and a third low refractive index transparent film. The material composition is as follows.
【００４７】 導電性光吸収膜 ：ＴｉＮ膜 （膜厚１０ｎｍ） 第１の高屈折率透明膜：ＴｉＯ2膜（膜厚２５ｎｍ） 第１の低屈折率透明膜：ＳｉＯ2膜（膜厚１６ｎｍ） 第２の高屈折率透明膜：ＴｉＯ2膜（膜厚５８ｎｍ） 第２の低屈折率透明膜：ＳｉＯ2膜（膜厚１１ｎｍ） 第３の高屈折率透明膜：ＴｉＯ2膜（膜厚３０ｎｍ） 第３の低屈折率透明膜：ＳｉＯ2膜（膜厚９０ｎｍ） この反射防止膜の第３の低屈折率透明膜側から光を入射
させたときの反射率特性を図５に示す。なお、この反射
率特性は、実際に上述のような構成で反射防止膜を形成
し、反射率を実測することで調べたものである。Conductive light absorbing film: TiN film (10 nm thick) First high refractive index transparent film: TiO 2 film (25 nm thick) First low refractive index transparent film: SiO 2 film (16 nm thick) Second high refractive index transparent film: TiO 2 film (thickness 58 nm) Second low refractive index transparent film: SiO 2 film (thickness 11 nm) Third high refractive index transparent film: TiO 2 film (thickness 30 nm) Third low-refractive-index transparent film: SiO 2 film (thickness: 90 nm) FIG. 5 shows the reflectance characteristics when light is incident from the third low-refractive-index transparent film side of the antireflection film. The reflectivity characteristics were obtained by actually forming an anti-reflection film with the above-described configuration and measuring the reflectivity.
【００４８】図５に示すように、この７層構成の反射防
止膜は、可視光域４３０〜６５０ｎｍでの最大反射率が
０．４１％、平均反射率が０．２２％であり十分な反射
防止性能を有する。As shown in FIG. 5, the antireflection film having the seven-layer structure has a maximum reflectance of 0.41% and an average reflectance of 0.22% in the visible light range of 430 to 650 nm, and has a sufficient reflection. Has prevention performance.
【００４９】なお、高屈折率透明膜としてＮｂ2Ｏ5を用
いた反射防止膜についても同様にして反射率特性を調べ
たところ同じ傾向の特性が得られ、５層構成、７層構成
のいずれの場合にも十分な反射防止性能が得られた。When an antireflection film using Nb 2 O 5 as a high-refractive-index transparent film was examined in the same manner, the characteristics having the same tendency were obtained. In the case of the above, sufficient antireflection performance was obtained.
【００５０】[0050]
【発明の効果】以上の説明からも明らかなように、本発
明の反射防止膜は基材にコーティングされるものであ
り、基材に近い側に導電性光吸収膜が形成され、この上
に高屈折率透明膜と低屈折率透明膜とがこの順で交互に
複数層形成されてなるので、広い波長領域で反射率が低
く、また優れた帯電防止性能が得られる。As is clear from the above description, the antireflection film of the present invention is coated on a substrate, and a conductive light absorbing film is formed on the side close to the substrate. Since a plurality of high-refractive-index transparent films and low-refractive-index transparent films are alternately formed in this order, the reflectance is low over a wide wavelength range, and excellent antistatic performance is obtained.
【００５１】また、インライン型スパッタリング装置を
用いる量産システムで作製した場合に導電性光吸収膜に
酸素等の不純物が混入しても、複数層形成された高屈折
率透明膜と低屈折率透明膜の膜厚等の調整によって光学
特性が容易に補正されるので、安定な反射防止性能が得
られる。Further, even when impurities such as oxygen are mixed in the conductive light absorbing film when the conductive light absorbing film is produced by a mass production system using an in-line type sputtering apparatus, a plurality of high refractive index transparent films and low refractive index transparent films are formed. The optical characteristics can be easily corrected by adjusting the film thickness and the like, so that stable antireflection performance can be obtained.
【００５２】したがって、このような反射防止膜を例え
ばディスプレイ表示面前面にコーティングした場合には
その画質や視認性が改善される。Therefore, when such an antireflection film is coated on, for example, the front surface of a display surface, the image quality and visibility are improved.
【図１】本発明を適用した反射防止膜の一例を示す概略
断面図である。FIG. 1 is a schematic sectional view showing an example of an antireflection film to which the present invention is applied.
【図２】本発明を適用した反射防止膜の他の例を示す概
略断面図である。FIG. 2 is a schematic sectional view showing another example of the antireflection film to which the present invention is applied.
【図３】５層構成の反射防止膜の反射率特性を示す計算
による特性図である。FIG. 3 is a characteristic diagram by calculation showing the reflectance characteristics of an antireflection film having a five-layer structure.
【図４】７層構成の反射防止膜の反射率特性を示す計算
による特性図である。FIG. 4 is a characteristic diagram by calculation showing the reflectance characteristics of an antireflection film having a seven-layer structure.
【図５】７層構成の反射防止膜の反射率特性を示す実測
による特性図である。FIG. 5 is an actual measurement characteristic diagram showing the reflectance characteristics of a seven-layer antireflection film.
１，１１ 基材、２，１２ 導電性光吸収膜、３，５，
１３，１５，１７ 高屈折率透明膜、４，６，１４，１
６，１８ 低屈折率透明膜1,11 base material, 2,12 conductive light absorbing film, 3,5
13, 15, 17 High refractive index transparent film, 4, 6, 14, 1
6,18 Low refractive index transparent film
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０４Ｎ 5/72 Ｇ０２Ｂ 1/10 Ａ ──────────────────────────────────────────────────の Continued on front page (51) Int.Cl. 6 Identification code FI H04N 5/72 G02B 1/10 A
Claims (11)
に近い側に導電性光吸収膜が形成され、この上に高屈折
率透明膜と低屈折率透明膜がこの順で交互にそれぞれ複
数層形成されてなることを特徴とする反射防止膜。1. An antireflection film for a substrate, wherein a conductive light absorbing film is formed on a side close to the substrate, and a high-refractive-index transparent film and a low-refractive-index transparent film are formed thereon in this order. An antireflection film comprising a plurality of layers formed alternately.
に近い側から導電性光吸収膜、第１の高屈折率透明膜、
第１の低屈折率透明膜、第２の高屈折率透明膜、第２の
低屈折率透明膜がこの順に形成されてなり、 導電性光吸収膜の膜厚が５〜２５ｎｍ、第１の高屈折率
透明膜の膜厚が１５〜３０ｎｍ、第１の低屈折率透明膜
の膜厚が１５〜３０ｎｍ、第２の高屈折率透明膜の膜厚
が１００〜１４０ｎｍ、第２の低屈折率透明膜の膜厚が
６０〜１２０ｎｍであることを特徴とする請求項１記載
の反射防止膜。2. An anti-reflection film for a substrate, comprising a conductive light absorbing film, a first high refractive index transparent film,
A first low-refractive-index transparent film, a second high-refractive-index transparent film, and a second low-refractive-index transparent film are formed in this order. The conductive light-absorbing film has a thickness of 5 to 25 nm, The thickness of the high refractive index transparent film is 15 to 30 nm, the thickness of the first low refractive index transparent film is 15 to 30 nm, the thickness of the second high refractive index transparent film is 100 to 140 nm, and the second low refractive index. 2. The antireflection film according to claim 1, wherein the film thickness of the transparent film is 60 to 120 nm.
に近い側から導電性光吸収膜、第１の高屈折率透明膜、
第１の低屈折率透明膜、第２の高屈折率透明膜、第２の
低屈折率透明膜、第３の高屈折率透明膜、第３の低屈折
率透明膜がこの順に形成されてなり、 導電性光吸収性膜の膜厚が５〜２５ｎｍ、第１の高屈折
率透明膜の膜厚が２０〜４０ｎｍ、第１の低屈折率透明
膜の膜厚が５〜３０ｎｍ、第２の高屈折率透明膜の膜厚
が５０〜９０ｎｍ、第２の低屈折率透明膜の膜厚が１〜
２０ｎｍ、第３の高屈折率透明膜の膜厚が３０〜５０ｎ
ｍ、第３の低屈折率透明膜の膜厚が６０〜１２０ｎｍで
あることを特徴とする請求項１記載の反射防止膜。3. An anti-reflection film for a substrate, comprising a conductive light absorbing film, a first high refractive index transparent film,
A first low refractive index transparent film, a second high refractive index transparent film, a second low refractive index transparent film, a third high refractive index transparent film, and a third low refractive index transparent film are formed in this order. The thickness of the conductive light-absorbing film is 5 to 25 nm, the thickness of the first high refractive index transparent film is 20 to 40 nm, the thickness of the first low refractive index transparent film is 5 to 30 nm, The high-refractive-index transparent film has a thickness of 50 to 90 nm, and the second low-refractive-index transparent film has a thickness of 1 to 90 nm.
20 nm, the thickness of the third high refractive index transparent film is 30 to 50 n
2. The anti-reflection film according to claim 1, wherein the thickness of the third low refractive index transparent film is 60 to 120 nm.
ことを特徴とする請求項１記載の反射防止膜。4. The antireflection film according to claim 1, wherein the conductive light absorbing film is made of titanium nitride.
オブのいずれかからなることを特徴とする請求項１記載
の反射防止膜。5. The antireflection film according to claim 1, wherein the high refractive index transparent film is made of one of titanium oxide and niobium oxide.
ることを特徴とする請求項１記載の反射防止膜。6. The antireflection film according to claim 1, wherein the low refractive index transparent film is made of silicon oxide.
の間に、金属または金属の窒化物よりなる酸化バリア層
が形成されていることを特徴とする請求項１記載の反射
防止膜。7. The reflection according to claim 1, wherein an oxidation barrier layer made of a metal or a metal nitride is formed between the conductive light absorbing film and the first high refractive index transparent film. Prevention film.
ガラス基板、プラスティック基板またはプラスチックフ
ィルムであることを特徴とする請求項１記載の反射防止
膜。8. The antireflection film according to claim 1, wherein the substrate is a glass substrate, a plastic substrate, or a plastic film constituting a display surface of the display.
を基材側の面とは反対側の面から照射したときの反射率
が、０．６％未満であることを特徴とする請求項１記載
の反射防止膜。9. The reflectivity when light having a wavelength band of 430 nm to 650 nm is irradiated from a surface opposite to the surface on the substrate side is less than 0.6%. Anti-reflective coating.
光を基材側の面とは反対側の面から照射したときの透過
率が、６０％〜９０％であることを特徴とする請求項１
記載の反射防止膜。10. The transmittance when light of a wavelength band of 430 nm to 650 nm is irradiated from a surface opposite to the surface on the substrate side is 60% to 90%.
The antireflection film as described in the above.
であることを特徴とする請求項１記載の反射防止膜。11. The antireflection film according to claim 1, wherein the surface has an electric resistance of 1 kΩ / □ or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9335909A JPH11171596A (en) | 1997-12-05 | 1997-12-05 | Reflection preventing film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9335909A JPH11171596A (en) | 1997-12-05 | 1997-12-05 | Reflection preventing film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11171596A true JPH11171596A (en) | 1999-06-29 |
Family
ID=18293732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9335909A Withdrawn JPH11171596A (en) | 1997-12-05 | 1997-12-05 | Reflection preventing film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11171596A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100483680B1 (en) * | 2000-08-29 | 2005-04-18 | 호야 가부시키가이샤 | Optical element having antireflection film |
| JP2006119525A (en) * | 2004-10-25 | 2006-05-11 | Canon Inc | Antireflection film |
| JP2010210945A (en) * | 2009-03-10 | 2010-09-24 | Seiko Epson Corp | Optical multilayer film and method for manufacturing the same |
| US7852562B2 (en) | 2005-02-28 | 2010-12-14 | Nalux Co., Ltd. | Optical element with laser damage suppression film |
| US7998324B2 (en) | 2003-09-26 | 2011-08-16 | Kabushiki Kaisha Toshiba | Sputtering target and process for producing si oxide film therewith |
| JP2012020425A (en) * | 2010-07-12 | 2012-02-02 | Tdk Corp | Transparent conductor and touch panel using the same |
| US8263172B2 (en) | 2006-08-25 | 2012-09-11 | Nalux Co., Ltd. | Method for producing optical element having multi-layered film |
| WO2014010400A1 (en) * | 2012-07-09 | 2014-01-16 | 旭硝子株式会社 | Method for manufacturing laminate body and laminate body |
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1997
- 1997-12-05 JP JP9335909A patent/JPH11171596A/en not_active Withdrawn
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100483680B1 (en) * | 2000-08-29 | 2005-04-18 | 호야 가부시키가이샤 | Optical element having antireflection film |
| US7998324B2 (en) | 2003-09-26 | 2011-08-16 | Kabushiki Kaisha Toshiba | Sputtering target and process for producing si oxide film therewith |
| JP2006119525A (en) * | 2004-10-25 | 2006-05-11 | Canon Inc | Antireflection film |
| JP4612827B2 (en) * | 2004-10-25 | 2011-01-12 | キヤノン株式会社 | Anti-reflection coating |
| US7852562B2 (en) | 2005-02-28 | 2010-12-14 | Nalux Co., Ltd. | Optical element with laser damage suppression film |
| US8263172B2 (en) | 2006-08-25 | 2012-09-11 | Nalux Co., Ltd. | Method for producing optical element having multi-layered film |
| JP2010210945A (en) * | 2009-03-10 | 2010-09-24 | Seiko Epson Corp | Optical multilayer film and method for manufacturing the same |
| JP2012020425A (en) * | 2010-07-12 | 2012-02-02 | Tdk Corp | Transparent conductor and touch panel using the same |
| WO2014010400A1 (en) * | 2012-07-09 | 2014-01-16 | 旭硝子株式会社 | Method for manufacturing laminate body and laminate body |
| JP2017206392A (en) * | 2016-05-16 | 2017-11-24 | 旭硝子株式会社 | Glass article |
| CN110174718A (en) * | 2019-06-28 | 2019-08-27 | 浙江舜宇光学有限公司 | Plated film lens and optical imaging device |
| WO2021235379A1 (en) * | 2020-05-21 | 2021-11-25 | デクセリアルズ株式会社 | Anti-reflection film |
| JP2021184032A (en) * | 2020-05-21 | 2021-12-02 | デクセリアルズ株式会社 | Antireflection film |
| TWI781633B (en) * | 2020-05-21 | 2022-10-21 | 日商迪睿合股份有限公司 | Anti-reflection film |
| CN113651545A (en) * | 2021-08-13 | 2021-11-16 | 福建福特科光电股份有限公司 | Neutral density tablet and preparation method thereof |
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