JPH11135546A - Resin sealed semiconductor device and its manufacture - Google Patents
Resin sealed semiconductor device and its manufactureInfo
- Publication number
- JPH11135546A JPH11135546A JP9300656A JP30065697A JPH11135546A JP H11135546 A JPH11135546 A JP H11135546A JP 9300656 A JP9300656 A JP 9300656A JP 30065697 A JP30065697 A JP 30065697A JP H11135546 A JPH11135546 A JP H11135546A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- connection terminal
- external connection
- semiconductor device
- metal plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
- H01L2224/10125—Reinforcing structures
- H01L2224/10126—Bump collar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、樹脂封止型半導体
装置及びその製造方法に関し、特に、リードレス構造の
樹脂封止型半導体装置及びその製造方法に関する。The present invention relates to a resin-sealed semiconductor device and a method of manufacturing the same, and more particularly, to a resin-less semiconductor device having a leadless structure and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】近年、各種電子機器の小型化、パーソナ
ル化の進展に伴い、高密度の樹脂封止型半導体装置が望
まれている。一般に、樹脂封止型半導体装置は、リード
フレームを有する構造のものと、リードフレームを有し
ないリードレス構造のものに大別される。2. Description of the Related Art In recent years, with the progress of miniaturization and personalization of various electronic devices, high-density resin-encapsulated semiconductor devices have been desired. Generally, resin-encapsulated semiconductor devices are broadly classified into those having a lead frame and those having a leadless structure without a lead frame.
【０００３】リードフレームを有する構造の樹脂封止型
半導体装置は、例えば、特開平８ー３２１５２６号公報
や「月刊Semiconductor World（1995.5）」の１２０頁
〜１２１頁に開示されている。図９は、リードフレーム
を有する構造の従来の樹脂封止型半導体装置を示す断面
図である。図９に示す樹脂封止型半導体装置は、いわゆ
るチッブサイズパッケ一ジ（ＣＳＰ）といわれるタイプ
のものであり、上方に折れ曲ったインナーリード部２０
ａを備えたリードフレーム２０と、そのリードフレーム
２０のインナーリード部２０ａに接合された半導体素子
２１と、その半導体素子２１の電極部とリードフレーム
２０のインナーリード部２０ａとを接続する金や銅等の
ボンディングワイヤ２２と、リードフレーム２０、半導
体素子２１及びボンディングワイヤ２２を封止する封止
樹脂２３とを有する。リードフレーム２０の折り曲げら
れていない部分の外側面は、外部に露出しており、その
所定位置でハンダめっきが行われ、封止樹脂２３の端面
に沿ってリード切断が行われる。A resin-encapsulated semiconductor device having a structure having a lead frame is disclosed, for example, in JP-A-8-321526 and "Monthly Semiconductor World (1995.5)", pp. 120-121. FIG. 9 is a sectional view showing a conventional resin-encapsulated semiconductor device having a structure having a lead frame. The resin-sealed semiconductor device shown in FIG. 9 is of a so-called chip-size package (CSP), and has an inner lead portion 20 bent upward.
a semiconductor device 21 joined to the inner lead portion 20 a of the lead frame 20, and gold or copper for connecting the electrode portion of the semiconductor device 21 and the inner lead portion 20 a of the lead frame 20. And the like, and a sealing resin 23 for sealing the lead frame 20, the semiconductor element 21 and the bonding wires 22. The outer surface of the unfolded portion of the lead frame 20 is exposed to the outside. Solder plating is performed at a predetermined position, and the lead is cut along the end surface of the sealing resin 23.
【０００４】その後、封止樹脂の表面に品名表示等の捺
印が施されて、半導体装置が完成する。Thereafter, a seal such as a product name is stamped on the surface of the sealing resin to complete the semiconductor device.
【０００５】一方、リードレス構造の樹脂封止型半導体
装置は、例えば、「半導体パッケージに関するロードマ
ップ（1996.12 社団法人電子機械工業会発行）」の３
７頁に開示されている。On the other hand, a resin-encapsulated semiconductor device having a leadless structure is described, for example, in “Roadmap on Semiconductor Packages (published by the Electronic Machinery Manufacturers Association of December 1996)”.
It is disclosed on page 7.
【０００６】図１０は、リードレス構造の従来の樹脂封
止型半導体装置を示す断面図である。図１０に示す樹脂
封止型半導体装置は、半導体素子３０と、その半導体素
子３０とボンディングワイヤ３１によって接続され、半
導体素子３０から所定間隔を隔てた位置に配置される凹
状のめっき部３２と、半導体素子３０及びめっき部３２
の内側面を封止する封止樹脂３３とを有する。FIG. 10 is a sectional view showing a conventional resin-encapsulated semiconductor device having a leadless structure. The resin-encapsulated semiconductor device shown in FIG. 10 includes a semiconductor element 30, a concave plated portion 32 connected to the semiconductor element 30 by a bonding wire 31, and disposed at a predetermined distance from the semiconductor element 30. Semiconductor element 30 and plating part 32
And a sealing resin 33 that seals the inner side surface.
【０００７】この樹脂封止型半導体装置の製造方法で
は、まず、ボンディングワイヤ３１で結線される金属板
（図示せず）の領域に、予め化学処理（以下、エッチン
グ、又はハーフエッチングという）によって凹部を形成
する。In this method for manufacturing a resin-encapsulated semiconductor device, first, a concave portion is formed in a region of a metal plate (not shown) connected by bonding wires 31 by a chemical treatment (hereinafter, referred to as etching or half etching) in advance. To form
【０００８】次いで、その凹部に電解法等によって金、
パラジウム、ニッケル、さらにパラジウム、金をめっき
してめっき部３２を形成する。Next, gold is formed in the concave portion by electrolytic method or the like.
A plated portion 32 is formed by plating palladium, nickel, palladium, and gold.
【０００９】次いで、金属板の平坦部に半導体素子３０
を接合する。Next, the semiconductor element 30 is placed on the flat portion of the metal plate.
To join.
【００１０】次いで、半導体素子３０の電極部とめっき
部３２の内側面とを金や銅等のボンディングワイヤ３１
で結線する。Next, the electrode portion of the semiconductor element 30 and the inner surface of the plating portion 32 are connected to a bonding wire 31 made of gold, copper, or the like.
Connect with.
【００１１】次いで、金属板に載置された半導体素子３
０、ボンディングワイヤ３１及びめっき部３２の内側面
とを封止樹脂３３で封止する。Next, the semiconductor element 3 mounted on the metal plate
0, the bonding wire 31 and the inner surface of the plated portion 32 are sealed with a sealing resin 33.
【００１２】次いで、樹脂封止されていない金属板の外
側面をエッチング処理によって溶解する。Next, the outer surface of the metal plate that is not resin-sealed is melted by etching.
【００１３】その後、封止樹脂の表面に品名等の捺印が
なされて、半導体装置が完成する。Thereafter, a seal such as a product name is stamped on the surface of the sealing resin to complete the semiconductor device.
【００１４】[0014]
【発明が解決しようとする課題】図９に示す半導体装置
においては、リードフレーム２０のインナーリード部２
０ａを折曲加工し、さらに両面に接着剤がコートされた
ポリイミドフィルム等のフィルム２４を用いて半導体素
子２１とを接着している。通常、この接着加工は２００
〜３００℃の高温下で行われる。その際に、接着剤に含
有されている種種の成分が気化し、インナーリード部２
０ａのボンディングワイヤボンディング領域や半導体装
置の電極部を汚染してボンディングワイヤ２２の接着強
度が劣化する等、半導体装置の機能を低下されるおそれ
があるという問題がある。In the semiconductor device shown in FIG. 9, the inner lead portion 2 of the lead frame 20 is provided.
0a is bent, and the semiconductor element 21 is bonded to the semiconductor element 21 using a film 24 such as a polyimide film coated on both sides with an adhesive. Usually, this bonding process is 200
It is performed at a high temperature of ~ 300 ° C. At this time, various components contained in the adhesive are vaporized, and the inner lead portion 2
There is a problem that the function of the semiconductor device may be degraded, for example, the bonding wire bonding area of 0a or the electrode portion of the semiconductor device may be contaminated and the bonding strength of the bonding wire 22 may be deteriorated.
【００１５】また、金型を使用してリードフレーム２０
から外部リードを分離加工する際に、金型の機構上の問
題（例えば、ダイセットとパンチのクリアランス等）か
ら、封止樹脂２３の端面（側面）とリードカット面を同
一面にすることが困難である。Further, the lead frame 20 is formed by using a mold.
When separating the external lead from the mold, it is necessary to make the end face (side face) of the sealing resin 23 and the lead cut face the same face due to a mechanical problem of the mold (for example, a clearance between a die set and a punch). Have difficulty.
【００１６】さらに、リードカット面はリードフレーム
の素材金属が露出するため、プリント基板等への実装に
おいてハンダ付け性の劣化要因となる。Further, since the material metal of the lead frame is exposed on the lead cut surface, it becomes a factor of deteriorating solderability in mounting on a printed circuit board or the like.
【００１７】一方、図１０に示す半導体装置において
は、ボンディングワイヤ３１の接合領域（ボンディング
領域）であるめっき部３２が凹形状に形成されているの
で、現状の熱圧着方式のポンディング方式では、高度な
技術を必要とするため、作業性が低下する。On the other hand, in the semiconductor device shown in FIG. 10, the plating portion 32, which is the bonding region (bonding region) of the bonding wire 31, is formed in a concave shape. Since high technology is required, workability is reduced.
【００１８】また、通常、金属板への凹部の形成にはエ
ッチング法が用いられている。しかし、エッチング法で
形成された表面は平坦性が悪く（表面粗さは１０μｍ程
度である）、安定的なボンディングワイヤ３１との結合
強度が得られない等の問題がある。Usually, an etching method is used for forming a concave portion in a metal plate. However, the surface formed by the etching method has poor flatness (surface roughness is about 10 μm), and has a problem that stable bonding strength with the bonding wire 31 cannot be obtained.
【００１９】また、高価なパラジウムや金等の貴金属め
っきを必要とするため、半導体装置の製造コストが高く
なる。Further, since expensive noble metal plating such as palladium or gold is required, the manufacturing cost of the semiconductor device is increased.
【００２０】さらに、凹部への電解めっき処理は、その
形状から均一の電着性が悪く、めっき処理工程の良品率
低下の要因となる。Further, the electrolytic plating treatment on the concave portion has a poor uniform electrodeposition property due to its shape, and causes a reduction in the yield rate in the plating treatment step.
【００２１】本発明は、上記課題を解決するためになさ
れたものであり、外部接続端子部とボンディングワイヤ
との接続状態を良好にし、信頼性の高いリードレス構造
の樹脂封止型半導体装置及びその製造方法を提供するこ
とを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has a high reliability leadless structure resin-encapsulated semiconductor device which improves the connection between an external connection terminal and a bonding wire. It is an object of the present invention to provide a manufacturing method thereof.
【００２２】[0022]
【課題を解決するための手段】本発明の樹脂封止型半導
体装置は、半導体素子と、その半導体素子と所定間隔を
隔てた位置に配置される外部接続端子部と、半導体素子
と外部接続端子部とを接続するボンディングワイヤと、
半導体素子、外部接続端子部及びボンディングワイヤを
封止する封止樹脂とを有するリードレス構造の樹脂封止
型半導体装置において、外部接続端子部は、封止樹脂の
内部に位置しボンディングワイヤに接続される略平坦状
の内側面と、封止樹脂の外部に露出した外側面とを有す
ることを特徴とするものである。According to the present invention, there is provided a resin-encapsulated semiconductor device, comprising: a semiconductor element; an external connection terminal disposed at a predetermined distance from the semiconductor element; A bonding wire connecting the
In a resin-sealed semiconductor device having a leadless structure having a semiconductor element, an external connection terminal portion, and a sealing resin for sealing a bonding wire, the external connection terminal portion is located inside the sealing resin and connected to the bonding wire. It has a substantially flat inner surface and an outer surface exposed to the outside of the sealing resin.
【００２３】上記半導体素子、封止樹脂及び外部接続端
子部の外側面は、略同一平面状に形成されてもよい。The outer surfaces of the semiconductor element, the sealing resin, and the external connection terminal may be formed in substantially the same plane.
【００２４】上記外部接続端子部は、封止樹脂から外部
に突出して形成されてもよい。The external connection terminal may be formed so as to protrude from the sealing resin to the outside.
【００２５】本発明の樹脂封止型半導体装置の製造方法
は、（１）金属板に凸状の外部接続端子部を形成する工
程と、（２）金属板の平坦部上に半導体素子を接合する
工程と、（３）外部接続端子部と半導体素子とをボンデ
ィングワイヤで接続する工程と、（４）金属板上の半導
体素子、外部接続端子部及びボンディングワイヤを封止
樹脂で封止する工程と、（５）金属板の平坦部を、外部
接続端子部の外側面が封止樹脂の外部に露出するよう
に、除去する工程と、を有し、（１）から（５）の順序
で行われることを特徴とするものである。The method for manufacturing a resin-encapsulated semiconductor device according to the present invention includes the steps of (1) forming a convex external connection terminal portion on a metal plate, and (2) bonding a semiconductor element on a flat portion of the metal plate. (3) connecting the external connection terminal portion and the semiconductor element with a bonding wire, and (4) sealing the semiconductor element on the metal plate, the external connection terminal portion, and the bonding wire with a sealing resin. And (5) removing the flat portion of the metal plate so that the outer surface of the external connection terminal portion is exposed to the outside of the sealing resin, in the order of (1) to (5). It is characterized by being performed.
【００２６】上記（５）の工程では、半導体素子、封止
樹脂及び外部接続端子部の外側面が略同一平面状に形成
されるように、金属板の平坦部を除去してもよい。In the step (5), the flat portion of the metal plate may be removed so that the outer surfaces of the semiconductor element, the sealing resin, and the external connection terminal are formed in substantially the same plane.
【００２７】また、上記（５）の工程では、金属板の平
坦部の一部が凸状の外部接続端子部につながり、封止樹
脂の外部から突出して形成されるように、金属板の平坦
部を除去してもよい。In the step (5), the flat portion of the metal plate is connected to the convex external connection terminal portion and formed so as to protrude from the outside of the sealing resin. The part may be removed.
【００２８】上記（５）の工程は、例えば、金属板の平
坦部をエッチング液に浸して溶解させることにより行わ
れる。The step (5) is performed, for example, by immersing and dissolving the flat portion of the metal plate in an etching solution.
【００２９】本発明によれば、外部接続端子部が封止樹
脂の内部に位置しボンディングワイヤに接続される略平
坦状の内側面と、封止樹脂の外部に露出した外側面とを
有するので、外部接続端子部とボンディングワイヤとの
接続状態が良好になる。According to the present invention, since the external connection terminal portion is located inside the sealing resin and has a substantially flat inner surface connected to the bonding wire, and the outer surface exposed to the outside of the sealing resin. Thus, the connection between the external connection terminal and the bonding wire is improved.
【００３０】また、高価なパラジウムや金等の貴金属め
っきを必要とせず、従来の樹脂封止型半導体装置用のリ
ードフレームに使用される金属板をそのまま使用でき
る。Further, it is not necessary to use expensive noble metal plating such as palladium or gold, and a metal plate used for a lead frame for a conventional resin-encapsulated semiconductor device can be used as it is.
【００３１】[0031]
【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて説明する。図１は、本発明の第１の実施の形
態に係る樹脂封止型半導体装置を示す断面図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a resin-sealed semiconductor device according to a first embodiment of the present invention.
【００３２】図１に示すように、本発明の第１の実施の
形態に係る樹脂封止型半導体装置は、半導体素子１と、
その半導体素子１と所定間隔を隔てた位置に独立して配
置される複数の外部接続端子部２と、半導体素子１の電
極部と外部接続端子部２とを接続する金や銅等の金属細
線からなるボンディングワイヤ３と、半導体素子１及び
外部接続端子部２を封止する封止樹脂４とを有し、リー
ドフレームを有しないリードレス構造になっている。As shown in FIG. 1, a resin-encapsulated semiconductor device according to a first embodiment of the present invention includes a semiconductor element 1,
A plurality of external connection terminals 2 independently arranged at a predetermined distance from the semiconductor element 1; and a thin metal wire such as gold or copper connecting the electrodes of the semiconductor element 1 and the external connection terminals 2 And a sealing resin 4 for sealing the semiconductor element 1 and the external connection terminal 2, and has a leadless structure without a lead frame.
【００３３】外部接続端子部２は、４２合金や銅合金等
の金属で作られ、封止樹脂４の内部に位置しボンディン
グワイヤ３に接続される略平坦状の内側面２ａと、封止
樹脂４の外部に露出した外側面２ｂとを有する。The external connection terminal portion 2 is made of a metal such as a 42 alloy or a copper alloy, and is located inside the sealing resin 4 and connected to the bonding wire 3. 4 and an outer surface 2b exposed to the outside.
【００３４】また、半導体素子１、封止樹脂４及び外部
接続端子部２の外側面２ｂは、略同一平面状に形成され
る。The outer surface 2b of the semiconductor element 1, the sealing resin 4, and the external connection terminal 2 is formed in substantially the same plane.
【００３５】図２乃至図５は、本発明の第１の実施の形
態に係る樹脂封止型半導体装置の製造方法を示す工程図
である。FIGS. 2 to 5 are process diagrams showing a method for manufacturing a resin-encapsulated semiconductor device according to the first embodiment of the present invention.
【００３６】まず、図２に示すように、４２合金（４２
％がニッケル、残りが鉄）で作られた厚さ約０．２５ｍ
ｍの金属板５を用意し、金属板５上の外部接続端子部２
が形成される領域に電解法で下地めっきとして銅めっき
を０．４０ミクロン電着させ、さらに、ボンディングワ
イヤ３との熱圧着が容易になされるように、銀めっき膜
６を１０ミクロン電着させる。なお、当該めっき処理の
前処理として、アルカリ電解脱脂処理を行い、４２合金
の金属板５の表面を清浄化する。さらに、当該合金の表
面に生成されている酸化膜を除去するために、希塩酸処
理を行う。各処理後には純水洗浄を行う。また、銀めっ
き処理後には純水洗浄を行い、エチルアルコールに浸し
た後に熱風乾燥を行う。First, as shown in FIG.
% Nickel and the rest iron)
m metal plate 5 is prepared, and the external connection terminal 2 on the metal plate 5 is prepared.
Is electroplated with copper plating as a base plating by 0.40 μm in a region where the is formed, and further, a silver plating film 6 is electrodeposited by 10 μm so that thermocompression bonding with the bonding wire 3 is easily performed. . As a pretreatment of the plating process, an alkaline electrolytic degreasing process is performed to clean the surface of the metal plate 5 made of 42 alloy. Further, dilute hydrochloric acid treatment is performed to remove an oxide film formed on the surface of the alloy. After each treatment, pure water washing is performed. After the silver plating treatment, the substrate is washed with pure water, immersed in ethyl alcohol, and dried with hot air.
【００３７】次いで、金属板５の銀めっき膜６上及び金
属板の底面に液状レジスト７を被覆し、液状レジスト７
が乾燥した後に、紫外線を照射して露光処理を行い、さ
らに現像処理、硬膜処理、バーニング処理（熱硬化処
理）を行う。そして、塩化第二鉄を主成分としたエッチ
ング液を金属板５に吹き付け、外部接続端子部領域以外
をエッチング（ハーフエッチング）処理する。エッチン
グ処理量としては、例えば、金属板５の厚さ（約０．２
５ｍｍ）の１／２である。エッチング処理された金属板
５には、レジスト剥離処理、純水洗浄処理及び熱風乾燥
処理が行われる。以上の処理により、図３に示すよう
に、金属板５に凸状の外部接続端子部２が形成される。Next, a liquid resist 7 is coated on the silver plating film 6 of the metal plate 5 and the bottom surface of the metal plate.
After the is dried, an exposure process is performed by irradiating ultraviolet rays, and further, a development process, a hardening process, and a burning process (thermosetting process) are performed. Then, an etching solution containing ferric chloride as a main component is sprayed onto the metal plate 5 to etch (half-etch) the area other than the external connection terminal area. The etching amount is, for example, the thickness of the metal plate 5 (about 0.2
5 mm). The etched metal plate 5 is subjected to a resist stripping process, a pure water cleaning process, and a hot air drying process. By the above processing, as shown in FIG. 3, the external connection terminal portion 2 having a convex shape is formed on the metal plate 5.
【００３８】次いで、金属板５の平坦部に、エポキシ粉
脂を主成分とし銀ペースト８（例えば、住友べークライ
ト株式会社製の商品名ＣＭＫ１０７７）を、厚さ２５ミ
クロン塗布する。そして、銀ペースト８上に半導体素子
１を載置し、２５０℃（大気中）で１２０秒間の加熱処
理を行い、金属板５上に半導体素子１を固着する。Next, a silver paste 8 (for example, CMK1077 manufactured by Sumitomo Bakelite Co., Ltd.) containing epoxy grease as a main component is applied to a flat portion of the metal plate 5 to a thickness of 25 μm. Then, the semiconductor element 1 is placed on the silver paste 8, and heat treatment is performed at 250 ° C. (in air) for 120 seconds to fix the semiconductor element 1 on the metal plate 5.
【００３９】次いで、直径２８ミクロンの金属細線であ
るボンディングワイヤ３を用いて、超音波を併用した熱
圧着（温度２５０℃）方式で、半導体素子１の電極部と
外部接続端子部２の内側面上の銀めっき膜６との間を結
線する。Next, using the bonding wire 3 which is a thin metal wire having a diameter of 28 μm, the thermocompression bonding (temperature 250 ° C.) using ultrasonic waves together with the inner surface of the electrode portion of the semiconductor element 1 and the external connection terminal portion 2. A connection is made with the upper silver plating film 6.
【００４０】次いで、エポキシ樹脂からなる封止樹脂４
を用いて、半導体素子１、ボンディングワイヤ３及び外
部接続端子部２の外周部を封止する。樹脂封止後には、
１８０℃の高温で７時間保管し封止樹脂４の硬化処理を
行う。この段階で半導体装置の半製品となる（図４参
照）。Next, a sealing resin 4 made of epoxy resin
Is used to seal the outer peripheral portions of the semiconductor element 1, the bonding wires 3 and the external connection terminal portions 2. After resin sealing,
After being stored at a high temperature of 180 ° C. for 7 hours, the sealing resin 4 is cured. At this stage, a semi-finished product of the semiconductor device is obtained (see FIG. 4).
【００４１】次いで、半導体素子１が載置されていない
金属板５の外側面を、塩化第二鉄を主成分としたエッチ
ング液に浸して溶解させる。溶解は、半導体素子１の下
面が外部に露出する量である。これによって、外部接続
端子部２の外側面は、封止樹脂４の外側面（底面）に露
出し、プリント基板等に実装する際の半導体装置側の端
子部となる（図５参照）。Next, the outer surface of the metal plate 5 on which the semiconductor element 1 is not mounted is immersed and dissolved in an etching solution containing ferric chloride as a main component. Dissolution is an amount by which the lower surface of the semiconductor element 1 is exposed to the outside. Thus, the outer surface of the external connection terminal portion 2 is exposed on the outer surface (bottom surface) of the sealing resin 4 and becomes a terminal portion on the semiconductor device side when mounted on a printed circuit board or the like (see FIG. 5).
【００４２】次いで、錫３７％、鉛６３％の半田ボール
９（例えば、千住金属株式会社製の商品名スバークルボ
ールＳ）にフラックス（例えば、千住金属株式会社製の
商品名スバークルフラックス３８５）を塗布した後に、
外部接続端子部２の外側面２ｂに載置し、１８５℃（窒
素雰囲気中）の高温下で溶着させる（図１参照）。Next, a flux (for example, Sburkle flux (trade name, manufactured by Senju Metal Co., Ltd.)) is applied to a solder ball 9 (trade name, manufactured by Senju Metal Co., Ltd.) of 37% tin and 63% (lead). 385) is applied,
It is placed on the outer surface 2b of the external connection terminal portion 2 and is welded at a high temperature of 185 ° C. (in a nitrogen atmosphere) (see FIG. 1).
【００４３】その後に、封止樹脂４表面に品名表示等の
捺印を行い、リードレス構造の表面実装タイプの樹脂封
止型半導体装置が完成する。Thereafter, a seal such as a product name is stamped on the surface of the sealing resin 4 to complete a surface-mount type resin-sealed semiconductor device having a leadless structure.
【００４４】なお、本実施の形態において銀めっきの下
地めっきとして銅めっきを行っているのは、銀めっきの
密着性を向上させるためである。又、銅めっきの厚さを
０.４ミクロンとしたのは、金属板５の表面の圧延ロー
ル目や圧延加工傷等の表面欠陥をカバーするために必要
な厚さだからである。さらに、銀めっきの厚さを１０ミ
クロンとしたのは、ボンディングワイヤ３と銀めっき膜
６の表面との熱圧着性の安定した品質を得るために必要
な厚さだからである。In this embodiment, the reason why copper plating is performed as a base plating for silver plating is to improve the adhesion of silver plating. The reason why the thickness of the copper plating is set to 0.4 μm is that the thickness is necessary to cover surface defects such as rolling rolls and rolling scratches on the surface of the metal plate 5. Furthermore, the reason why the thickness of the silver plating is set to 10 microns is that the thickness is necessary for obtaining stable quality of thermocompression bonding between the bonding wire 3 and the surface of the silver plating film 6.
【００４５】図６は、本発明の第２の実施の形態に係る
樹脂封止型半導体装置を示す断面図である。図６に示す
ように、本発明の第２の実施の形態に係る樹脂封止型半
導体装置は、外部接続端子部２が封止樹脂４から外部に
突出して形成される点で、第１の実施の形態のものと異
なる。第２の実施の形態によれば、プリント板等への実
装時の作業ミス等で、半田ボール９の形状が損なわれて
も封止樹脂４から露出している半導体素子１の裏面が実
装基板に直接接触することを防止できるので、実装作業
条件が広範囲に設定できる。なお、図６では、外部接続
端子部２に半田ボール９を接合しているが、外部接続端
子部２の外側面２ｂを湾曲状に形成することにより、半
田ボール９を用いないで、プリント板等に直接実装して
もよい。FIG. 6 is a sectional view showing a resin-sealed semiconductor device according to a second embodiment of the present invention. As shown in FIG. 6, the resin-encapsulated semiconductor device according to the second embodiment of the present invention has the first This is different from the embodiment. According to the second embodiment, the back surface of the semiconductor element 1 exposed from the encapsulation resin 4 is mounted on the mounting substrate even if the shape of the solder ball 9 is damaged due to an operation error during mounting on a printed board or the like. Since it is possible to prevent direct contact, the mounting operation conditions can be set in a wide range. In FIG. 6, the solder balls 9 are joined to the external connection terminal portions 2. However, by forming the outer surface 2 b of the external connection terminal portions 2 in a curved shape, the printed circuit board can be used without using the solder balls 9. Etc. may be directly implemented.
【００４６】図７及び図８は、本発明の第２の実施の形
態に係る樹脂封止型半導体装置の製造方法を示す工程図
である。7 and 8 are process diagrams showing a method for manufacturing a resin-sealed semiconductor device according to a second embodiment of the present invention.
【００４７】まず、金属板５に凸状の外部接続端子部２
を形成する（図２及び図３参照）。次いで、金属板５の
平坦部上に半導体素子１を接合し、外部接続端子部２と
半導体素子１とをボンディングワイヤ３で接続し、金属
板５上の半導体素子１、外部接続端子部２及びボンディ
ングワイヤ３を封止樹脂４で封止する（図４参照）。こ
の工程までは、第１の実施の形態と同様である。First, a convex external connection terminal 2 is formed on a metal plate 5.
(See FIGS. 2 and 3). Next, the semiconductor element 1 is joined to the flat part of the metal plate 5, the external connection terminal part 2 and the semiconductor element 1 are connected by the bonding wire 3, and the semiconductor element 1 on the metal plate 5, the external connection terminal part 2, The bonding wire 3 is sealed with a sealing resin 4 (see FIG. 4). Up to this step, it is the same as in the first embodiment.
【００４８】次いで、金属板５の平坦部の一部が凸状の
外部接続端子部２につながり、封止樹脂４の外部から突
出して形成されるように、金属板５の平坦部を除去す
る。具体的には、凸状の外部接続端子部２の位置に対応
する金属板５の外側面に液状レジスト７を被覆する（図
７参照）。Next, the flat portion of the metal plate 5 is removed so that a part of the flat portion of the metal plate 5 is connected to the convex external connection terminal portion 2 and formed so as to protrude from the outside of the sealing resin 4. . Specifically, the liquid resist 7 is coated on the outer surface of the metal plate 5 corresponding to the position of the convex external connection terminal portion 2 (see FIG. 7).
【００４９】次いで、液状レジスト７が乾燥した後に、
エッチング液を用いて金属板５の平坦部をエッチングす
る。これによって、封止樹脂４の外部から突出した外部
接続端子部２が形成される（図８参照）本発明は、上記
実施の形態に限定されることはなく、特許請求の範囲に
記載された技術的事項の範囲内において、種々の変更が
可能である。例えば、金属板５として、４２合金の他に
銅合金を用いてもよい。Next, after the liquid resist 7 is dried,
The flat portion of the metal plate 5 is etched using an etchant. As a result, the external connection terminal portions 2 protruding from the outside of the sealing resin 4 are formed (see FIG. 8). The present invention is not limited to the above embodiment, but is described in the claims. Various changes are possible within the scope of technical matters. For example, as the metal plate 5, a copper alloy may be used in addition to the 42 alloy.
【００５０】[0050]
【発明の効果】本発明によれば、外部接続端子部が封止
樹脂の内部に位置しボンディングワイヤに接続される略
平坦状の内側面と、封止樹脂の外部に露出した外側面と
を有するので、外部接続端子部とボンディングワイヤと
の接続状態が良好になり、製品の信頼性が向上する。According to the present invention, the substantially flat inner surface where the external connection terminal portion is located inside the sealing resin and is connected to the bonding wire, and the outer surface exposed to the outside of the sealing resin are formed. As a result, the connection state between the external connection terminal portion and the bonding wire is improved, and the reliability of the product is improved.
【００５１】また、従来の凹状のめっき部へのボンディ
ングに比べて、本発明の外部接続端子部へのボンディン
グの方が容易であり、作業性が向上する。The bonding to the external connection terminal according to the present invention is easier and the workability is improved, as compared with the conventional bonding to the concave plated portion.
【００５２】さらに、高価なパラジウムや金等の貴金属
めっきを必要とせず、従来の樹脂封止型半導体装置用の
リードフレームに使用される金属板をそのまま使用でき
るため、半導体装置の製造コストが低くなる。Further, since the metal plate used for the lead frame for the conventional resin-encapsulated semiconductor device can be used as it is without requiring expensive noble metal plating such as palladium or gold, the manufacturing cost of the semiconductor device is low. Become.
【図１】本発明の第１の実施の形態に係る樹脂封止型半
導体装置を示す断面図である。FIG. 1 is a sectional view showing a resin-sealed semiconductor device according to a first embodiment of the present invention.
【図２】本発明の第１の実施の形態に係る樹脂封止型半
導体装置の製造方法を示す工程図である。FIG. 2 is a process chart showing a method for manufacturing the resin-encapsulated semiconductor device according to the first embodiment of the present invention.
【図３】本発明の第１の実施の形態に係る樹脂封止型半
導体装置の製造方法を示す工程図である。FIG. 3 is a process chart showing a method for manufacturing the resin-encapsulated semiconductor device according to the first embodiment of the present invention.
【図４】本発明の第１の実施の形態に係る樹脂封止型半
導体装置の製造方法を示す工程図である。FIG. 4 is a process chart showing a method for manufacturing the resin-encapsulated semiconductor device according to the first embodiment of the present invention.
【図５】本発明の第１の実施の形態に係る樹脂封止型半
導体装置の製造方法を示す工程図である。FIG. 5 is a process chart showing a method for manufacturing the resin-encapsulated semiconductor device according to the first embodiment of the present invention.
【図６】本発明の第２の実施の形態に係る樹脂封止型半
導体装置を示す断面図である。FIG. 6 is a sectional view showing a resin-sealed semiconductor device according to a second embodiment of the present invention.
【図７】本発明の第２の実施の形態に係る樹脂封止型半
導体装置の製造方法を示す工程図である。FIG. 7 is a process chart showing a method for manufacturing a resin-encapsulated semiconductor device according to a second embodiment of the present invention.
【図８】本発明の第２の実施の形態に係る樹脂封止型半
導体装置の製造方法を示す工程図である。FIG. 8 is a process chart showing a method for manufacturing a resin-sealed semiconductor device according to a second embodiment of the present invention.
【図９】リードフレームを有する構造の従来の樹脂封止
型半導体装置を示す断面図である。FIG. 9 is a sectional view showing a conventional resin-encapsulated semiconductor device having a structure having a lead frame.
【図１０】リードレス構造の従来の樹脂封止型半導体装
置を示す断面図である。FIG. 10 is a sectional view showing a conventional resin-encapsulated semiconductor device having a leadless structure.
１：半導体素子 ２：外部接続端子部 ２ａ：内側面 ２ｂ：外側面 ３：ボンディングワイヤ ４：封止樹脂 ５：金属板 ６：銀めっき膜 ７：液状レジスト ８：銀ペースト ９：半田ボール 1: Semiconductor element 2: External connection terminal 2a: Inner surface 2b: Outer surface 3: Bonding wire 4: Sealing resin 5: Metal plate 6: Silver plating film 7: Liquid resist 8: Silver paste 9: Solder ball
Claims (7)
を隔てた位置に配置される外部接続端子部と、前記半導
体素子と外部接続端子部とを接続するボンディングワイ
ヤと、前記半導体素子、外部接続端子部及びボンディン
グワイヤを封止する封止樹脂とを有するリードレス構造
の樹脂封止型半導体装置において、 前記外部接続端子部は、前記封止樹脂の内部に位置し前
記ボンディングワイヤに接続される略平坦状の内側面
と、封止樹脂の外部に露出した外側面とを有することを
特徴とする樹脂封止型半導体装置。A semiconductor element, an external connection terminal disposed at a predetermined distance from the semiconductor element, a bonding wire connecting the semiconductor element and the external connection terminal, In a resin-sealed semiconductor device having a leadless structure having a connection terminal portion and a sealing resin for sealing a bonding wire, the external connection terminal portion is located inside the sealing resin and connected to the bonding wire. A resin-sealed semiconductor device having a substantially flat inner surface and an outer surface exposed to the outside of the sealing resin.
子部の外側面は、略同一平面状に形成されることを特徴
とする請求項１に記載の樹脂封止型半導体装置。2. The resin-encapsulated semiconductor device according to claim 1, wherein outer surfaces of the semiconductor element, the encapsulating resin, and the external connection terminal are formed substantially in the same plane.
外部に突出して形成されることを特徴とする請求項１に
記載の樹脂封止型半導体装置。3. The resin-encapsulated semiconductor device according to claim 1, wherein the external connection terminal portion is formed so as to protrude outward from the encapsulation resin.
成する工程と、（２）前記金属板の平坦部上に半導体素
子を接合する工程と、（３）前記外部接続端子部と半導
体素子とをボンディングワイヤで接続する工程と、
（４）前記金属板上の半導体素子、外部接続端子部及び
ボンディングワイヤを封止樹脂で封止する工程と、
（５）前記金属板の平坦部を、前記外部接続端子部の外
側面が封止樹脂の外部に露出するように、除去する工程
と、 を有し、（１）から（５）の順序で行われることを特徴
とする樹脂封止型半導体装置の製造方法。4. A process for forming a convex external connection terminal on a metal plate, a process for bonding a semiconductor element on a flat portion of the metal plate, and a process for connecting the semiconductor device on a flat portion of the metal plate. Connecting the part and the semiconductor element with a bonding wire,
(4) a step of sealing the semiconductor element, the external connection terminal portion, and the bonding wire on the metal plate with a sealing resin;
(5) removing the flat portion of the metal plate such that the outer surface of the external connection terminal portion is exposed to the outside of the sealing resin; and (5) in the order of (1) to (5). A method of manufacturing a resin-encapsulated semiconductor device, which is performed.
封止樹脂及び外部接続端子部の外側面が略同一平面状に
形成されるように、前記金属板の平坦部を除去すること
を特徴とする請求項４に記載の樹脂封止型半導体装置の
製造方法。5. In the step (5), the semiconductor device comprises:
5. The resin-encapsulated semiconductor device according to claim 4, wherein a flat portion of the metal plate is removed so that an outer surface of the encapsulation resin and an external connection terminal portion are formed in substantially the same plane. Production method.
部の一部が前記凸状の外部接続端子部につながり、前記
封止樹脂の外部から突出して形成されるように、前記金
属板の平坦部を除去することを特徴とする請求項４に記
載の樹脂封止型半導体装置の製造方法。6. In the step (5), the flat portion of the metal plate is connected to the convex external connection terminal portion and is formed so as to protrude from the outside of the sealing resin. 5. The method according to claim 4, wherein a flat portion of the metal plate is removed.
ッチング液に浸して溶解させることにより行われること
を特徴とする請求項４乃至６のいずれか１つの項に記載
の樹脂封止型半導体装置の製造方法。7. The resin according to claim 4, wherein the step (5) is performed by immersing a flat portion of the metal plate in an etching solution to dissolve the flat portion. A method for manufacturing a sealed semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9300656A JPH11135546A (en) | 1997-10-31 | 1997-10-31 | Resin sealed semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9300656A JPH11135546A (en) | 1997-10-31 | 1997-10-31 | Resin sealed semiconductor device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11135546A true JPH11135546A (en) | 1999-05-21 |
Family
ID=17887495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9300656A Pending JPH11135546A (en) | 1997-10-31 | 1997-10-31 | Resin sealed semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11135546A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008028414A (en) * | 2007-09-14 | 2008-02-07 | Renesas Technology Corp | Semiconductor device |
| JP2008147237A (en) * | 2006-12-06 | 2008-06-26 | Toyo Kohan Co Ltd | Metal laminated plate for qfn and its manufacturing method, and method of manufacturing qfn using the metal laminated plate for qfn |
| EP2261962A3 (en) * | 2009-06-11 | 2013-02-27 | LSI Corporation | An electronic device package and method of manufacture |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59208756A (en) * | 1983-05-12 | 1984-11-27 | Sony Corp | Manufacture of semiconductor device package |
| JPH05129473A (en) * | 1991-11-06 | 1993-05-25 | Sony Corp | Resin-sealed surface-mounting semiconductor device |
-
1997
- 1997-10-31 JP JP9300656A patent/JPH11135546A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59208756A (en) * | 1983-05-12 | 1984-11-27 | Sony Corp | Manufacture of semiconductor device package |
| JPH05129473A (en) * | 1991-11-06 | 1993-05-25 | Sony Corp | Resin-sealed surface-mounting semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008147237A (en) * | 2006-12-06 | 2008-06-26 | Toyo Kohan Co Ltd | Metal laminated plate for qfn and its manufacturing method, and method of manufacturing qfn using the metal laminated plate for qfn |
| JP2008028414A (en) * | 2007-09-14 | 2008-02-07 | Renesas Technology Corp | Semiconductor device |
| EP2261962A3 (en) * | 2009-06-11 | 2013-02-27 | LSI Corporation | An electronic device package and method of manufacture |
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