JPH1058317A - Polishing method and device for substrate - Google Patents

Polishing method and device for substrate

Info

Publication number
JPH1058317A
JPH1058317A JP14312997A JP14312997A JPH1058317A JP H1058317 A JPH1058317 A JP H1058317A JP 14312997 A JP14312997 A JP 14312997A JP 14312997 A JP14312997 A JP 14312997A JP H1058317 A JPH1058317 A JP H1058317A
Authority
JP
Japan
Prior art keywords
polishing
substrate
polished
wafer
polishing tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14312997A
Other languages
Japanese (ja)
Inventor
Nobu Shimizu
展 清水
Norio Kimura
憲雄 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP14312997A priority Critical patent/JPH1058317A/en
Priority to KR1019970018840A priority patent/KR100496916B1/en
Publication of JPH1058317A publication Critical patent/JPH1058317A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a flat, smooth and clean polished surface by performing polishing while a surface to be polished of a substrate is pressed to a first polishing tool surface rotating on its axis with prescribed pressure, and performing polishing while the surface to be polished of the substrate is pressed with prescribed pressure to a second polishing tool surface adapted to conduct plane relative translation in a prescribed locus. SOLUTION: A first polishing process is performed for a wafer fitted to a top ring of a main polishing unit in such a manner that the top ring revolving on its axis presses the wafer to abrasive cloth of a turntable, high speed relative movement between the wafer and the abrasive cloth is conducted and a polishing liquid is supplied. After that, the wafer 1 is directly or coarsely washed to be transferred to a finishing unit 30. Here a second polishing process is performed, that is, a stool 37 conducts translational circular motion, the wafer 1 fitted to the top ring 32 revolving on its axis is pressed onto abrasive cloth 59 surface bonded to the stool 1, and polished by a polishing liquid supplied to the polishing surface. A very small relative translational circular motion with a radius (e) is caused between the abrasive cloth 59 and the wafer 1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、研磨方法および装
置に係り、特に半導体ウエハ、ガラス基板、液晶パネル
等の高度の清浄度が要求される基板を研磨するのに好適
な方法および装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing method and apparatus, and more particularly to a method and apparatus suitable for polishing a substrate requiring a high degree of cleanliness, such as a semiconductor wafer, a glass substrate, and a liquid crystal panel.

【０００２】[0002]

【従来の技術】近年、半導体デバイスの高集積化が進む
につれて回路の配線が微細化し、配線間距離もより狭く
なりつつあり、特に０．５μｍ以下の光リソグラフィの
場合は、焦点深度が浅くなるためにステッパの結像面の
平坦度を必要とする。また、基板上に配線間距離より大
きなパーティクルが存在すると、配線がショートするな
どの不具合が生じるので、基板の処理においては、平坦
化とともに清浄化を図ることが重要となる。このような
事情は、マスク等に用いるガラス基板、或いは液晶パネ
ル等の基板のプロセス処理においても同様である。2. Description of the Related Art In recent years, as the degree of integration of semiconductor devices has increased, circuit wiring has become finer and the distance between wirings has become smaller. Especially in the case of optical lithography of 0.5 μm or less, the depth of focus becomes shallower. Therefore, the flatness of the image forming surface of the stepper is required. Further, if particles larger than the distance between the wirings exist on the substrate, problems such as short-circuiting of the wirings occur. Therefore, in the processing of the substrate, it is important to clean the substrate together with the flattening. Such a situation is the same in the process of processing a glass substrate used as a mask or the like or a substrate such as a liquid crystal panel.

【０００３】従来の研磨装置として、図５に示すよう
に、研磨ユニット１０、ロード・アンロードユニット２
１、搬送ロボット２２、２つの洗浄機２３ａ，２３ｂを
有するものがある。研磨ユニット１０は、図６に示され
るように、上面にクロス（研磨布）１１を貼り付けたタ
ーンテーブル１２と、半導体ウエハ１を保持しつつター
ンテーブル１２に押しつけるトップリング１３とを具備
している。As a conventional polishing apparatus, as shown in FIG. 5, a polishing unit 10, a load / unload unit 2
1. Some have a transfer robot 22 and two washing machines 23a and 23b. As shown in FIG. 6, the polishing unit 10 includes a turntable 12 having a cloth (polishing cloth) 11 adhered to the upper surface thereof, and a top ring 13 which presses the semiconductor wafer 1 against the turntable 12 while holding the semiconductor wafer 1. I have.

【０００４】このような構成の研磨装置において、トッ
プリング１３の下面に半導体ウエハ１を保持し、半導体
ウエハ１を回転しているターンテーブル１２の上面の研
磨布１１に昇降シリンダにより押圧する。一方、研磨砥
液ノズル１４から研磨砥液Ｑを流すことにより、研磨布
１１に研磨砥液Ｑが保持され、半導体ウエハ１の研磨さ
れる面（下面）と研磨布１１の間に研磨砥液Ｑが存在し
た状態で研磨が行われる。In the polishing apparatus having such a configuration, the semiconductor wafer 1 is held on the lower surface of the top ring 13 and the semiconductor wafer 1 is pressed against the polishing cloth 11 on the rotating turntable 12 by a lifting cylinder. On the other hand, by flowing the polishing abrasive fluid Q from the polishing abrasive fluid nozzle 14, the polishing abrasive fluid Q is held by the polishing cloth 11, and the polishing abrasive fluid Q is placed between the polishing surface (the lower surface) of the semiconductor wafer 1 and the polishing cloth 11. Polishing is performed in the presence of Q.

【０００５】ターンテーブル１２とトップリング１３は
それぞれが独立の回転数で回転しており、トップリング
１３は、ウエハ１の縁部がターンテーブル１２の中心及
び縁から所定距離ａ，ｂだけ離れた位置に来るようにウ
エハ１を保持し、これにより、ウエハ１の全面が均一に
かつ高速度で研磨される。従って、ターンテーブル１２
の径Ｄは、次式に示すようにウエハ１の径ｄの２倍以上
に設定されている。 Ｄ＝２（ｄ＋ａ＋ｂ）The turntable 12 and the top ring 13 are rotating at independent rotation speeds. The top ring 13 is such that the edge of the wafer 1 is separated from the center and the edge of the turntable 12 by predetermined distances a and b. The wafer 1 is held so as to come to a position, whereby the entire surface of the wafer 1 is polished uniformly and at a high speed. Therefore, the turntable 12
Is set to be twice or more the diameter d of the wafer 1 as shown in the following equation. D = 2 (d + a + b)

【０００６】研磨されたウエハ１は、洗浄装置２３ａ，
２３ｂにおいて１ないし数次の洗浄工程と乾燥工程を経
て、ロード・アンロードユニット２１においてウエハ搬
送用カセット２４に収容される。ウエハ１を洗浄する方
法としては、ナイロン、モヘア等のブラシや、ＰＶＡ
（ポリビニルアルコール）スポンジによって表面を擦る
スクラブ洗浄が行われている。The polished wafer 1 is supplied to a cleaning device 23a,
In the load / unload unit 21, the wafer is transferred to the wafer transfer cassette 24 through the first or several-order cleaning step and drying step at 23 b. As a method for cleaning the wafer 1, brushes such as nylon and mohair, PVA
Scrub cleaning in which the surface is rubbed with a (polyvinyl alcohol) sponge is performed.

【０００７】[0007]

【発明が解決しようとする課題】上記のような従来の研
磨装置においては、ターンテーブル１２とトップリング
１３の相対的な変位が大きく、またその相対速度も大き
いため効率的な研磨がなされ、平坦度も充分に得られる
が、面粗度が大きくなる傾向がある。これを防止するた
めに、２台のターンテーブルを設置して、研磨布の粗
度、回転速度、研磨液を変えて研磨を行なうことも考え
られる。しかしながら、上述したようにターンテーブル
の径はウエハの２倍以上と大きく、大きな面積を占有す
るとともに、装置コストも大きくなる。この欠点は、半
導体ウエハの大径化の傾向に伴って一層顕著となる。In the conventional polishing apparatus as described above, the relative displacement between the turntable 12 and the top ring 13 is large and the relative speed thereof is large, so that efficient polishing is performed, Can be obtained sufficiently, but the surface roughness tends to increase. In order to prevent this, it is conceivable to install two turntables and perform polishing by changing the roughness, rotation speed and polishing liquid of the polishing pad. However, as described above, the diameter of the turntable is twice as large as that of the wafer, occupying a large area, and increasing the apparatus cost. This disadvantage becomes more remarkable as the diameter of the semiconductor wafer increases.

【０００８】一方、１つのターンテーブルで、例えば、
研磨液を替え、回転速度を落として研磨を行なうことも
考えられるが、研磨液自体の経済性が落ちること、研磨
時間が長引くことによる効率の低下をもたらす。On the other hand, with one turntable, for example,
It is conceivable to perform polishing by changing the polishing liquid and reducing the rotation speed. However, the economics of the polishing liquid itself are reduced, and the efficiency is reduced due to prolonged polishing time.

【０００９】また、清浄化に関しても、研磨材を用いた
研磨の後にスクラブ洗浄を行なう場合には、サブミクロ
ンレベルのパーティクルの除去が難しい、あるいはウエ
ハとパーティクルの結合力が強い場合に洗浄効果が現れ
ないという問題点があった。[0009] Regarding cleaning, when scrub cleaning is performed after polishing using an abrasive, it is difficult to remove submicron-level particles or when the bonding force between the wafer and the particles is strong, the cleaning effect is high. There was a problem that it did not appear.

【００１０】本発明は上述の事情に鑑みなされたもの
で、高度の平坦化と清浄化をコンパクトな装置で効率良
く行うことができる研磨方法およびその装置を提供する
ことを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a polishing method and a polishing apparatus capable of efficiently performing advanced flattening and cleaning with a compact apparatus.

【００１１】[0011]

【課題を解決するための手段】請求項１に記載の発明
は、自転する第１の研磨工具面に基板の被研磨面を所定
の圧力で押圧しながら研磨を行なう第１の工程と、上記
基板の被研磨面に対して所定の軌跡で平面相対並進運動
を行なう第２の研磨工具面に上記基板の被研磨面を所定
の圧力で押圧しながら処理を行なう第２の工程とを有す
ることを特徴とする基板の研磨方法である。According to a first aspect of the present invention, there is provided a first step of performing polishing while pressing a surface to be polished of a substrate against a surface of a first polishing tool which rotates by a predetermined pressure; A second step of performing processing while pressing the polished surface of the substrate with a predetermined pressure on a second polishing tool surface that performs a plane relative translation motion with a predetermined trajectory with respect to the polished surface of the substrate. A polishing method for a substrate characterized by the following.

【００１２】並進運動とは、２つの面が互いに対する姿
勢を変えずに、すなわち相対的に回転することなく相対
移動する場合、あるいはこのような並進運動が主である
ような相対移動を行なう場合を指すもので、移動のパタ
ーンは、所定の軌跡に沿った循環運動でもよく、またラ
ンダム（不規則）な動きであってもよい。この並進運動
では、接触する面の各部分で同一の相対移動が行われ
る。循環運動の場合の軌跡としては直線に沿った往復運
動でも、多角形や楕円のような特殊な形状でもよいが、
研磨性及び機構上からみて最適には円運動である。この
ような相対的な循環並進運動を得るためには、第２の研
磨工具面及び基板の被研磨面のいずれを実際に移動させ
てもよく、両方を移動させてもよい。A translational motion refers to a case where two surfaces move relative to each other without changing their attitude with respect to each other, that is, without rotating relatively, or a case where a relative motion such as such translational motion is mainly performed is performed. The movement pattern may be a circulating movement along a predetermined trajectory or a random (irregular) movement. In this translation, the same relative movement takes place in each part of the contacting surface. The trajectory of the circular motion may be a reciprocating motion along a straight line or a special shape such as a polygon or an ellipse.
Optimally, it is a circular motion from the viewpoint of polishing properties and mechanism. In order to obtain such a relative circular translational movement, either the second polishing tool surface or the surface to be polished of the substrate may be actually moved, or both may be moved.

【００１３】この方法においては、第１の工程において
は、ウエハと研磨工具面を比較的高速で相対移動させて
所定の研磨を行って平坦度を高める。第２の工程におい
ては、研磨工具の面粗度を小さくし、比較的小さい相対
速度で研磨を行って被研磨面を滑らかに仕上げるととも
に、付着している極微小のパーティクルを除去する。接
触面にはそれぞれの目的に応じた研磨剤を介在させる。
第１工程では砥粒を含ませ、第２工程では純水や薬液を
用いる。第２工程では、砥粒は通常用いず、用いる場合
でも極微細な砥粒を少量用いるとともに、研磨面と被研
磨面の間の押圧力も比較的小さくする。In this method, in the first step, the wafer and the polishing tool surface are relatively moved at a relatively high speed to perform a predetermined polishing to increase the flatness. In the second step, the surface roughness of the polishing tool is reduced, and polishing is performed at a relatively low relative speed to finish the surface to be polished smoothly and to remove extremely small particles attached thereto. Abrasives suitable for each purpose are interposed on the contact surface.
In the first step, abrasive grains are included, and in the second step, pure water or a chemical solution is used. In the second step, abrasive grains are not usually used, and even when they are used, a small amount of ultrafine abrasive grains is used, and the pressing force between the polished surface and the surface to be polished is relatively small.

【００１４】請求項２に記載の発明は、上記第２の工程
において、上記並進運動は所定のパターンを有する循環
運動であることを特徴とする請求項１に記載の基板の研
磨方法である。請求項３に記載の発明は、上記第２の工
程において、上記並進運動は上記第２の研磨工具を動か
すことにより与えられることを特徴とする請求項１に記
載の基板の研磨方法である。請求項４に記載の発明は、
上記第２の工程において、上記並進運動は不規則な運動
であることを特徴とする請求項１に記載の基板の研磨方
法である。According to a second aspect of the present invention, there is provided the method of polishing a substrate according to the first aspect, wherein, in the second step, the translational movement is a circulating movement having a predetermined pattern. The invention according to claim 3 is the method for polishing a substrate according to claim 1, wherein in the second step, the translational movement is given by moving the second polishing tool. The invention described in claim 4 is
2. The method according to claim 1, wherein, in the second step, the translational movement is an irregular movement.

【００１５】請求項５に記載の発明は、上記第２の工程
において、上記不規則な並進運動は、２つの直線運動の
ベクトル和として与えられることを特徴とする請求項１
に記載の基板の研磨方法である。請求項６に記載の発明
は、上記第１の研磨工具面に対する上記基板の被研磨面
の押圧圧力が２００〜５００ｇ／ｃｍ2であり、上記第
２の研磨工具面に対する上記基板の被研磨面の押圧圧力
が０〜２００ｇ／ｃｍ2であることを特徴とする請求項
１に記載の基板の研磨方法である。According to a fifth aspect of the present invention, in the second step, the irregular translational motion is given as a vector sum of two linear motions.
3. The method for polishing a substrate according to item 1. The invention according to claim 6, wherein a pressing pressure of the polished surface of the substrate against the first polishing tool surface is 200 to 500 g / cm 2 , and a polished surface of the substrate against the second polishing tool surface. 2. The method for polishing a substrate according to claim 1, wherein the pressing pressure is 0 to 200 g / cm < 2 >.

【００１６】上記第２の工程において、基板と研磨工具
の少なくとも一方を上記循環並進運動の周期より充分大
きい回転周期で自転させるようにしてもよく、これによ
り研磨面と被研磨面の接触する位置が順次変化して、全
体に均一化された処理がなされる。In the second step, at least one of the substrate and the polishing tool may be rotated by a rotation cycle sufficiently larger than the cycle of the circulating translational motion, whereby the position where the polishing surface and the surface to be polished come into contact with each other. Are sequentially changed, and the process is made uniform throughout.

【００１７】上記第２の工程において、研磨液として純
水を用いるようにしてもよく、これにより、この工程が
研磨の最終工程であるとともに洗浄の一工程として用い
られ、特に被研磨面に付着した微小なパーティクルの除
去に効果的である。In the second step, pure water may be used as a polishing liquid, so that this step is used not only as a final step of polishing but also as one step of cleaning, and particularly, is performed on a surface to be polished. It is effective for removing minute particles.

【００１８】請求項７に記載の発明は、研磨面に沿って
自転可能な第１の研磨工具と、その研磨面に基板の被研
磨面を所定の圧力で押圧可能な押圧手段とを有する第１
の研磨部と、上記基板の被研磨面に対して所定の軌跡で
相対並進運動可能な第２の研磨工具と、その研磨面に基
板の被研磨面を所定の圧力で押圧する押圧手段とを有す
る第２の研磨部を有することを特徴とする基板の研磨装
置である。According to a seventh aspect of the present invention, there is provided a first polishing tool having a first polishing tool rotatable along a polishing surface and a pressing means capable of pressing the surface to be polished of the substrate at a predetermined pressure on the polishing surface. 1
A polishing section, a second polishing tool capable of relatively translating along a predetermined locus with respect to the surface to be polished of the substrate, and pressing means for pressing the surface to be polished of the substrate against the polishing surface with a predetermined pressure. An apparatus for polishing a substrate, comprising: a second polishing section having the same.

【００１９】このような研磨装置においては、第２の研
磨工具が自転により研磨を行なうものではなく、全体に
並進運動を行なうものであるので、特定の静止点が無
い。従って、第２の研磨工具の大きさは、基板面積に並
進移動スペースを加えた大きさより少し大きいだけで済
み、装置全体もコンパクトになる。これに伴い、駆動用
モータも小型で済み、占有面積も小さくてよい。この利
点は、半導体ウエハなどの被処理基板が大型化するに従
い大きくなる。また、第２の研磨工具が自転を伴わない
ので、被処理基板のどの部分でも同一の相対速度が得ら
れ、低速で研磨したときに平坦性が得やすく、従って、
滑らかな面を得るにも有利である。In such a polishing apparatus, there is no specific stationary point because the second polishing tool does not perform polishing by rotation but performs translational movement as a whole. Therefore, the size of the second polishing tool is only required to be slightly larger than the size obtained by adding the translation space to the substrate area, and the entire apparatus becomes compact. Along with this, the driving motor may be small and the occupied area may be small. This advantage increases as the size of the substrate to be processed such as a semiconductor wafer increases. In addition, since the second polishing tool does not rotate, the same relative speed can be obtained in any part of the substrate to be processed, and flatness can be easily obtained when polishing at a low speed.
This is also advantageous for obtaining a smooth surface.

【００２０】上記第２の研磨工具を循環並進運動可能に
支持する支持部と、上記支持部を循環並進運動させる駆
動手段とを有するようにしてもよい。また、上記駆動手
段を、該駆動手段の駆動源の回転軸に対して偏心して設
けられた駆動端を有し、上記支持部を上記駆動端を収容
する凹所を有するようにしてもよい。[0020] The apparatus may comprise a support for supporting the second polishing tool so as to be capable of circulating translation, and a driving means for circulating and translating the support. Further, the drive means may have a drive end provided eccentrically with respect to a rotation axis of a drive source of the drive means, and the support portion may have a recess for accommodating the drive end.

【００２１】請求項８に記載の発明は、上記第１の研磨
工具面に対する上記基板の被研磨面の押圧圧力が２００
〜５００ｇ／ｃｍ2であり、上記第２の研磨工具面に対
する上記基板の被研磨面の押圧圧力が０〜２００ｇ／ｃ
ｍ2であることを特徴とする請求項７に記載の基板の研
磨装置である。According to an eighth aspect of the present invention, the pressing pressure of the polished surface of the substrate against the first polishing tool surface is 200.
And the pressing pressure of the surface to be polished of the substrate against the second polishing tool surface is 0 to 200 g / cm 2.
a polishing apparatus substrate according to claim 7, characterized in that the m 2.

【００２２】請求項９に記載の発明は、基台と、上面に
研磨工具を取り付け可能な定盤と、上記基台上において
上記定盤を循環並進運動可能に支持する支持部と、上記
定盤を循環並進運動させる駆動手段とを有することを特
徴とする基板の研磨装置である。上記駆動手段を、該駆
動手段の駆動源の回転軸に対して偏心して設けられた駆
動端を有し、上記支持部を上記駆動端を収容する凹所を
有するようにしてもよい。According to a ninth aspect of the present invention, there is provided a base, a surface plate to which a polishing tool can be attached on an upper surface, a support portion for supporting the surface plate on the base so as to be capable of translational translation, and And a driving means for causing the board to circulate and translate. The drive means may have a drive end provided eccentrically with respect to a rotation axis of a drive source of the drive means, and the support may have a recess for accommodating the drive end.

【００２３】請求項１０に記載の発明は、上記支持部
は、上記定盤をその縁部の少なくとも３箇所以上で支持
することを特徴とする請求項９に記載の研磨装置であ
る。また、記支持部を、軸線がずれた一対の軸体を連結
した連結部材を有し、該連結部材の各軸を上記定盤と上
記基台に形成した凹所に回転可能に挿入して構成するよ
うにしてもよい。According to a tenth aspect of the present invention, there is provided the polishing apparatus according to the ninth aspect, wherein the supporting portion supports the surface plate at at least three places on the edge thereof. In addition, the supporting portion has a connecting member that connects a pair of shafts whose axes are shifted, and each shaft of the connecting member is rotatably inserted into a recess formed in the base and the base. It may be configured.

【００２４】請求項１１に記載の発明は、上記定盤に
は、研磨工具の研磨面に向けて開口する研磨液供給流路
が設けられていることを特徴とする請求項９に記載の研
磨装置である。これにより、基板の中央部にも研磨液を
充分供給することができる。According to a twelfth aspect of the present invention, in the polishing apparatus according to the ninth aspect, the polishing plate is provided with a polishing liquid supply flow path which opens toward a polishing surface of the polishing tool. Device. Thereby, the polishing liquid can be sufficiently supplied also to the central portion of the substrate.

【００２５】請求項１２に記載の発明は、基台と、上面
に研磨工具を取り付け可能な定盤と、上記定盤を第１の
方向に直線運動可能に支持する第１の支持部と、上記第
１の支持部を第１の方向とは異なる第２の方向に直線運
動可能に支持する第２の支持部と、上記定盤、上記第１
の支持部、第２の支持部を直線運動させる駆動手段とを
有することを特徴とする基板の研磨装置である。According to a twelfth aspect of the present invention, there is provided a base, a surface plate to which a polishing tool can be attached on an upper surface, a first support portion for supporting the surface plate so as to be linearly movable in a first direction, A second support for supporting the first support in a second direction different from the first direction such that the first support can be linearly moved;
And a driving means for linearly moving the second support portion.

【００２６】第２の工程における並進運動は、第２の研
磨工具と上記基板の間で実質的に回転を伴わない運動で
あってもよいが、多少の相対回転を含んでも実質的に平
面相対並進運動を行なうものであればよい。The translational movement in the second step may be a movement that does not substantially involve rotation between the second polishing tool and the substrate, but may include a slight relative rotation and a substantially planar relative movement. Anything that performs a translational motion may be used.

【００２７】[0027]

【発明の実施の形態】図１は、この発明の研磨装置の実
施の形態を示すもので、長方形のスペースの一端側に被
研磨材であるウエハ１の出し入れを行なうロード・アン
ロードユニット２１が設けられ、他端側にはターンテー
ブルとトップリングを備えた主研磨ユニット（第１の研
磨部）１０が設けられている。そして、これらを結ぶウ
エハ搬送ライン上に、この例では２基の搬送ロボット２
２ａ，２２ｂが走行可能に設けられ、この搬送ラインの
一方の側にウエハ１を反転するための反転機２５が、他
方の側に仕上げ研磨ユニット（第２の研磨部）３０と３
機の洗浄機２３ａ，２３ｂ，２３ｃが設置されている。
主研磨ユニット１０は、１つのターンテーブル１２と２
つのトップリング１３を備えており、２枚のウエハ１を
並行して処理することができるが、この点を除けば図５
及び図６により説明したものと同じである。FIG. 1 shows an embodiment of a polishing apparatus according to the present invention. A load / unload unit 21 for loading and unloading a wafer 1 as a material to be polished is provided at one end of a rectangular space. A main polishing unit (first polishing unit) 10 having a turntable and a top ring is provided on the other end side. Then, on the wafer transfer line connecting them, in this example, two transfer robots 2
2a and 22b are provided so as to be able to travel, and a reversing machine 25 for reversing the wafer 1 is provided on one side of the transfer line, and finish polishing units (second polishing units) 30 and 3 are provided on the other side.
The washing machines 23a, 23b, 23c of the machine are installed.
The main polishing unit 10 includes one turntable 12 and 2
It has two top rings 13 and can process two wafers 1 in parallel, except for this point.
And FIG. 6.

【００２８】仕上げ研磨ユニット３０の構成を図２及び
図３により説明する。これは、循環並進運動する研磨工
具面を提供する並進テーブル部３１と、ウエハ１を被研
磨面を下に向けて把持し、所定圧力で研磨工具面に押圧
するトップリング３２を備えている。The configuration of the finish polishing unit 30 will be described with reference to FIGS. It has a translation table section 31 for providing a polishing tool surface which performs a cyclic translational movement, and a top ring 32 for gripping the wafer 1 with the surface to be polished downward and pressing the wafer 1 against the polishing tool surface with a predetermined pressure.

【００２９】並進テーブル部３１は、内部にモータ３３
を収容する筒状のケーシング３４の上部に、内側に環状
に張り出す支持板３５が設けられ、これには周方向に３
つ以上の支持部３６が形成され、定盤３７が支持されて
いる。つまり、この支持部３６の上面と定盤３７の下面
の対応する位置には、周方向に等間隔に複数の凹所３
８，３９が形成され、これにはそれぞれベアリング４
０，４１が装着されている。そして、このベアリング４
０，４１には、図３に示すように”ｅ”だけずれた２つ
の軸体４２，４３を持つ連結部材４４が、各軸体の端部
を挿入して装着され、これにより定盤３７が半径”ｅ”
の円に沿って並進運動可能となっている。The translation table 31 has a motor 33 inside.
A support plate 35 is provided on an upper part of a cylindrical casing 34 for accommodating the inside of the casing.
One or more support portions 36 are formed, and the platen 37 is supported. That is, at the corresponding position between the upper surface of the support portion 36 and the lower surface of the surface plate 37, the plurality of recesses 3 are arranged at equal intervals in the circumferential direction.
8, 39 are formed, each bearing 4
0, 41 are mounted. And this bearing 4
A connecting member 44 having two shafts 42 and 43 shifted by “e” as shown in FIG. 3 is attached to 0 and 41 by inserting the ends of the shafts. Is the radius "e"
It can be translated along the circle.

【００３０】また、定盤３７の中央下面側には、モータ
３３の主軸４５の上端に偏心して設けられた駆動端４６
を軸受４７を介して収容する凹所４８が形成されてい
る。この偏心量も同様に”ｅ”である。モータ３３は、
ケーシング３４内に形成されたモータ室４９に収容さ
れ、その主軸４５は上下の軸受５０，５１により支持さ
れているとともに、偏心による負荷のバランスをとるバ
ランサ５２ａ，５２ｂが設けられている。A drive end 46 eccentrically provided at the upper end of the main shaft 45 of the motor 33 is provided on the lower surface side of the center of the surface plate 37.
Is formed through a bearing 47. This eccentric amount is also “e”. The motor 33 is
The main shaft 45 is accommodated in a motor chamber 49 formed in the casing 34, is supported by upper and lower bearings 50, 51, and is provided with balancers 52a, 52b for balancing loads due to eccentricity.

【００３１】定盤３７は、研磨すべきウエハ１の径に偏
心量”ｅ”の２倍を加えた値よりやや大きい径に設定さ
れ、２枚の板状部材５３，５４を接合して構成されてい
る。これらの部材の間には研磨面に供給する研磨液を流
通させる空間５５が形成されている。この空間５５は側
面に設けられた研磨液供給口５６に連通しているととも
に、上面に開口する複数の研磨液吐出孔５７と連通して
いる。定盤３７の上面に貼付される研磨布５９にも対応
する位置に吐出孔５８が形成されており、通常は定盤３
７の全面にほぼ均一に分散配置されている。研磨布５９
の表面に格子状、スパイラル状、あるいは放射状等の溝
を設け、この溝に吐出口５８を連通させるようにしてい
もよい。The platen 37 is set to a diameter slightly larger than the value obtained by adding twice the eccentricity "e" to the diameter of the wafer 1 to be polished, and is constituted by joining two plate members 53 and 54 together. Have been. A space 55 is formed between these members to allow the polishing liquid supplied to the polishing surface to flow. The space 55 communicates with a polishing liquid supply port 56 provided on a side surface, and also communicates with a plurality of polishing liquid discharge holes 57 opened on the upper surface. A discharge hole 58 is formed at a position corresponding to a polishing cloth 59 attached to the upper surface of the surface plate 37.
7 are distributed substantially uniformly over the entire surface of the substrate 7. Polishing cloth 59
May be provided with grooves in a lattice shape, spiral shape, or radial shape on the surface thereof, and the discharge ports 58 may communicate with the grooves.

【００３２】押圧手段であるトップリング３２は、シャ
フト６０の下端に研磨面に合わせてある程度の傾動を可
能として取り付けられ、図示しないエアシリンダの押圧
力と駆動モータの回転力がシャフト６０を介してこのト
ップリング３２に伝達される。このトップリング３２
は、自転速度が遅い点以外は、構造的には図５及び図６
に示すものと同一である。なお、ケーシング３４の上部
外側には供給された研磨液を回収する回収槽６１が取り
付けられている。The top ring 32, which is a pressing means, is attached to the lower end of the shaft 60 so as to be able to tilt to some extent in accordance with the polishing surface, and the pressing force of an air cylinder (not shown) and the rotational force of the drive motor are transmitted through the shaft 60. The power is transmitted to the top ring 32. This top ring 32
Are structurally similar to FIGS. 5 and 6 except that the rotation speed is slow.
Are the same as those shown in FIG. In addition, a collection tank 61 for collecting the supplied polishing liquid is attached to the outside of the upper part of the casing 34.

【００３３】以下、上記のように構成された研磨装置の
作用を説明する。収納カセット２４（図５参照）内のウ
エハ１は、搬送ロボット２２ａ，２２ｂにより必要に応
じて反転機２５を介して主研磨ユニット１０のトップリ
ング１３に取り付けられる。トップリング１３は、図６
に示すように、自転しながらウエハ１をターンテーブル
１２の研磨布１１上に押圧する。ウエハ１と研磨布１１
の間の高速相対移動と、ノズル１４から供給される研磨
砥液Ｑによって第１研磨工程が行われる。Hereinafter, the operation of the polishing apparatus configured as described above will be described. The wafer 1 in the storage cassette 24 (see FIG. 5) is mounted on the top ring 13 of the main polishing unit 10 by the transfer robots 22a and 22b via a reversing machine 25 as necessary. The top ring 13 is shown in FIG.
As shown in FIG. 7, the wafer 1 is pressed onto the polishing pad 11 of the turntable 12 while rotating. Wafer 1 and polishing cloth 11
The first polishing step is performed by the high-speed relative movement during the above and the polishing liquid Q supplied from the nozzle 14.

【００３４】第１研磨工程が終わったウエハ１は、直接
に又は粗洗浄を行った後、仕上げ研磨ユニット３０に移
送され、ここで第２研磨工程が行われる。すなわち、モ
ータ３３の作動によって定盤３７が並進円運動し、トッ
プリング３２に取り付けられたウエハ１は定盤３７に貼
付した研磨布５９の面上に押し付けられる。The wafer 1 having undergone the first polishing step is transferred directly or after rough cleaning to a finish polishing unit 30, where the second polishing step is performed. That is, the platen 37 makes a translational circular motion by the operation of the motor 33, and the wafer 1 attached to the top ring 32 is pressed against the surface of the polishing pad 59 attached to the platen 37.

【００３５】研磨液供給口５６、研磨液空間５５、研磨
液吐出孔５７，５８を介して研磨面に供給された研磨液
により研磨が行われる。研磨布５９とウエハ１の間に
は、半径”ｅ”の微小な相対並進円運動が生じて、ウエ
ハ１の被研磨面はその全面において均一な研磨がなされ
る。なお、被研磨面と研磨面の位置関係が同じである
と、研磨面の局部的な差異による影響を受けるので、こ
れを避けるためにトップリング３２を徐々に自転させ
て、研磨布５９の同じ場所のみで研磨がなされるのを防
止している。Polishing is performed by the polishing liquid supplied to the polishing surface through the polishing liquid supply port 56, the polishing liquid space 55, and the polishing liquid discharge holes 57 and 58. A small relative translational circular motion having a radius "e" occurs between the polishing cloth 59 and the wafer 1, and the surface to be polished of the wafer 1 is uniformly polished. If the positional relationship between the polished surface and the polished surface is the same, the polished surface is affected by a local difference. Polishing is prevented only at the place.

【００３６】なお、第１研磨工程では、所定の研磨量を
得るためにウエハ１と研磨工具（研磨布）１１の面を高
速で相対移動させ、押圧力も比較的大きくしているのに
対し、第２研磨工程は平坦度や面粗度の向上とともに、
付着している微細径の粒子を除去することを目的とする
ので、研磨工具（研磨布）５９の面の粗度を小さくし、
工具とウエハの相対移動速度、押圧力を第１研磨工程に
比べて小さく設定する。また、研磨液としては、通常は
純水を用いた水研磨とし、必要に応じて薬液や特殊スラ
リーを用いる。In the first polishing step, the wafer 1 and the surface of the polishing tool (polishing cloth) 11 are relatively moved at a high speed in order to obtain a predetermined polishing amount, and the pressing force is relatively large. , The second polishing step improves flatness and surface roughness,
Since the purpose is to remove the attached fine particles, the roughness of the surface of the polishing tool (polishing cloth) 59 is reduced,
The relative movement speed and pressing force between the tool and the wafer are set smaller than those in the first polishing step. The polishing liquid is usually water polishing using pure water, and a chemical solution or a special slurry is used as necessary.

【００３７】第２の研磨工程が終わったウエハは、必要
に応じて洗浄機２３ａ〜２３ｃにおいて数次の洗浄が行
われた後に乾燥され、ウエハカセット２４に収容され
る。この研磨装置においては、第１の研磨工程を行なう
主研磨ユニット１０では２つのトップリング１３が設け
られている。従って、第２研磨工程の研磨時間を第１の
研磨工程の研磨時間のほぼ２分の１にすることにより、
各装置がロスタイムなしに稼動して効率の向上を図るこ
とができる。The wafer after the second polishing step is dried after being subjected to several washings in washing machines 23a to 23c as necessary, and is stored in a wafer cassette 24. In this polishing apparatus, two top rings 13 are provided in the main polishing unit 10 for performing the first polishing step. Therefore, by making the polishing time of the second polishing step approximately half of the polishing time of the first polishing step,
Each device operates without any loss time to improve efficiency.

【００３８】この装置では、研磨工程が２段階に分かれ
て並行して行われるので、第１の研磨工程の研磨時間は
短縮され、従って、装置の全体のスループット（処理
量）は、図５及び図６に示した従来の装置に比べて向上
する。また、仕上げ研磨ユニット３０は、循環並進運動
型であるので、定盤３７の大きさはウエハ１の大きさよ
り偏心量である”ｅ”だけ大きな程度の径であれば良
い。従って、主研磨ユニット１０と同じターンテーブル
形式のものを２基設置する場合に比較して、設置面積を
大幅に小さくすることができる。さらに、この仕上げ研
磨ユニット３０では、定盤３７が循環並進運動をするの
で、図２に示すように定盤３７をその縁部の複数箇所で
支持することができ、高速で回転するターンテーブルに
比べてより平坦度の高い研磨を行なうことができる。In this apparatus, since the polishing step is performed in two stages and performed in parallel, the polishing time in the first polishing step is shortened. Therefore, the overall throughput (processing amount) of the apparatus is as shown in FIG. It is improved compared to the conventional device shown in FIG. Further, since the finish polishing unit 30 is of the circular translation type, the size of the surface plate 37 may be a diameter that is larger than the size of the wafer 1 by the amount of eccentricity “e”. Therefore, the installation area can be significantly reduced as compared with the case where two units of the same turntable type as the main polishing unit 10 are installed. Further, in the finish polishing unit 30, since the surface plate 37 performs a circulating translational motion, as shown in FIG. 2, the surface plate 37 can be supported at a plurality of locations on the edge thereof, so that the turntable can be rotated at a high speed. Polishing with higher flatness can be performed as compared with the above.

【００３９】以下に、第１次研磨工程と第２次研磨工程
の平均的な研磨条件を対比して示す。 第１次研磨 研磨剤 被研磨材の材質により異なる 研磨布 被研磨材の材質により異なる 面圧 ２００〜５００ｇ／ｃｍ2 相対速度 ０．０７〜０．６ｍ／ｓｅｃ 時間 研磨量により異なる 第２次研磨 研磨剤 水、薬液、スラリー 研磨布 柔らかいクロス（不織布、ナップ層の物） 面圧 ０〜２００ｇ／ｃｍ2 相対速度 ０．０７〜０．６ｍ／ｓｅｃ 時間 １０〜１２０ｓｅｃThe average polishing conditions of the first polishing step and the second polishing step are shown below in comparison. Primary polishing Abrasive Depends on the material of the material to be polished Polishing cloth Depends on the material of the material to be polished Surface pressure 200 to 500 g / cm 2 Relative speed 0.07 to 0.6 m / sec Time Depends on the amount of polishing Secondary polishing Abrasive Water, chemical solution, slurry Abrasive cloth Soft cloth (nonwoven fabric, nap layer) Surface pressure 0 to 200 g / cm 2 Relative speed 0.07 to 0.6 m / sec Time 10 to 120 sec

【００４０】なお、上記の実施の形態では、研磨工具を
循環並進運動させているが、基板側を運動させるように
しても良い。さらに、上記実施の形態ではクランク状の
連結部材を用いて定盤を支持したが、自転を規制しなが
ら並進運動を可能とするような適当な支持構造、例え
ば、磁気軸受や無潤滑滑り軸受を用いても良い。In the above embodiment, the polishing tool is circulated and translated, but the substrate may be moved. Further, in the above embodiment, the platen is supported using the crank-shaped connecting member. However, a suitable support structure that enables translational movement while restricting rotation, for example, a magnetic bearing or a non-lubricated sliding bearing is used. May be used.

【００４１】また、上記では、モータの回転駆動軸に偏
心した駆動端を形成して定盤を並進円運動させたが、例
えば、ＸＹステージを用いてＸ方向とＹ方向の運動のベ
クトル和として定盤を運動させてもよく、工具と基板の
双方を運動させて同じ並進運動を得ても良い。In the above description, the eccentric drive end is formed on the rotary drive shaft of the motor, and the platen is translated in circular motion. For example, the vector sum of the motion in the X direction and the Y direction is obtained by using an XY stage. The platen may be moved, and both the tool and the substrate may be moved to obtain the same translational movement.

【００４２】図４に示すのは、そのような方法を実施す
るための装置の１つの実施の形態を示すもので、基板を
下面に保持するトップリング１００の下側に、ＸＹステ
ージの上面に取り付けられた研磨工具１０１を配置して
いる。この例では、研磨工具は比較的粒度の細かい砥粒
をバインダで固めた電着砥石を用いている。FIG. 4 shows one embodiment of an apparatus for carrying out such a method, in which an underside of a top ring 100 for holding a substrate on a lower side and an upper side of an XY stage. The mounted polishing tool 101 is arranged. In this example, the polishing tool uses an electrodeposited grindstone in which abrasive grains having a relatively fine grain size are fixed with a binder.

【００４３】ＸＹステージは、Ｘステージ１０２、Ｙス
テージ１０３、固定盤１０４が基台１０５上に順次設置
されて構成されている。ＸステージとＹステージの間に
は、ＸステージがＹステージに対してＸ方向に走行可能
となるように、例えば摺動機構と、送りねじのような直
線駆動機構とが設けられている。同様に、Ｙステージと
固定盤の間には、Ｙステージが固定盤に対してＹ方向に
走行可能となるように、やはり摺動機構と直線駆動機構
とが設けられている。また、これらの駆動機構を制御す
るための制御装置が設けられている。The XY stage has an X stage 102, a Y stage 103, and a fixed board 104 which are sequentially installed on a base 105. For example, a sliding mechanism and a linear drive mechanism such as a feed screw are provided between the X stage and the Y stage so that the X stage can travel in the X direction with respect to the Y stage. Similarly, a sliding mechanism and a linear drive mechanism are provided between the Y stage and the fixed board so that the Y stage can run in the Y direction with respect to the fixed board. Further, a control device for controlling these drive mechanisms is provided.

【００４４】このような構成において、Ｘステージ１０
２とＹステージ１０３のそれぞれの駆動機構によりそれ
ぞれの方向に同じ位相の正弦波、余弦波の変位を与えれ
ば、Ｘステージは固定盤１０４に対してその合成ベクト
ルとして円運動を行う。これにより、先の実施の形態の
装置と同様に研磨工具１０１は循環並進運動を行い、研
磨が行われる。この例においても、図４に矢印で示すよ
うに、トップリングを循環並進運動の周期より充分大き
い回転周期で自転させて、研磨工具の局所的な影響を排
除するようにしてもよい。In such a configuration, the X stage 10
When the sine wave and cosine wave displacements of the same phase are given in the respective directions by the respective drive mechanisms of the 2 and Y stage 103, the X stage makes a circular motion as a combined vector with respect to the fixed plate 104. As a result, the polishing tool 101 performs a circulating translational motion as in the apparatus according to the above-described embodiment, and polishing is performed. Also in this example, as shown by the arrow in FIG. 4, the top ring may be rotated at a rotation cycle sufficiently larger than the cycle of the circulating translational motion to eliminate the local influence of the polishing tool.

【００４５】この装置では、偏芯機構のような機械的な
構成を用いていないので、循環並進運動の軌跡を任意に
変えることができる利点がある。例えば、循環円運動の
半径”ｅ”を基板の研磨中に変えることができるので、
研磨の最初と最後は比較的小さい半径で行い、中間段階
で比較的大きな半径で研磨を行なうような制御を行なう
ことができる。これにより、単純な循環運動を繰り返す
場合の一定方向の傷の発生のような不利点を回避するこ
とができる。Since this device does not use a mechanical structure such as an eccentric mechanism, there is an advantage that the trajectory of the circulating translational motion can be arbitrarily changed. For example, the radius "e" of the circular motion can be changed during polishing of the substrate,
Control can be performed such that polishing is performed with a relatively small radius at the beginning and end of polishing, and polishing is performed with a relatively large radius at an intermediate stage. This can avoid disadvantages such as generation of a scratch in a fixed direction when a simple circulating motion is repeated.

【００４６】この装置では、円のみでなく、楕円、８の
字状運動、あるいは振幅する螺旋のような循環並進運
動、あるいはこれらの任意の組み合わせの運動を行なう
ことができる。さらに、この装置では、特定の軌跡の循
環並進運動ではなく、全くランダムな、つまり循環しな
い並進運動を行わせることもできる。これは、例えば、
ある所定の曲率半径以下の走行経路を採らないという条
件下で、乱数発生器からの乱数をもとに軌跡を決めるプ
ログラムにより実行可能である。This device can perform not only a circle but also an ellipse, a figure-eight movement, a circular translation movement such as an oscillating spiral, or any combination thereof. In addition, this device can perform a completely random, ie, non-circulating, translational motion instead of a circular motion of a specific trajectory. This is, for example,
The program can be executed by a program that determines a trajectory based on random numbers from a random number generator under a condition that a traveling route having a radius of curvature equal to or less than a predetermined radius of curvature is not adopted.

【００４７】[0047]

【発明の効果】以上説明したように、この発明の方法に
よれば、第１の研磨工程において、ウエハと研磨工具面
を比較的高速で相対移動させて所定の研磨を行って平坦
度を高め、第２の研磨工程において、研磨工具の面粗度
を小さくし、比較的小さい相対速度で研磨を行って被研
磨面を滑らかに仕上げるとともに、付着している極微小
のパーティクルを除去し、結果として平坦で滑らかなし
かも清浄な研磨面を効率的に得ることができる。As described above, according to the method of the present invention, in the first polishing step, the wafer and the polishing tool surface are relatively moved at a relatively high speed to perform a predetermined polishing to improve the flatness. In the second polishing step, the surface roughness of the polishing tool is reduced, the surface is polished at a relatively small relative speed to finish the surface to be polished smoothly, and the extremely small particles attached thereto are removed. As a result, a flat, smooth and clean polished surface can be efficiently obtained.

【００４８】また、この発明の装置によれば、第２の研
磨工具が自転により研磨を行なうものではなく、全体に
並進運動を行なうものであるので、被処理基板に並進移
動スペースを加えた程度の大きさで済み、装置全体もコ
ンパクトになり、これに伴い、駆動用モータも小型で済
み、占有面積も小さくてよい。また、定盤をその縁部の
少なくとも３箇所以上で支持することにより、押圧力が
掛かっても定盤が安定に支持されるので被研磨面の平坦
性が高く維持される。Further, according to the apparatus of the present invention, the second polishing tool does not perform polishing by rotation but performs translational movement as a whole. And the whole apparatus becomes compact, and accordingly, the driving motor also needs to be small, and the occupied area may be small. Further, by supporting the platen at at least three or more of its edges, the platen is stably supported even when a pressing force is applied, so that the flatness of the polished surface is maintained high.

【図面の簡単な説明】[Brief description of the drawings]

【図１】この発明の研磨装置の全体の配置を示す図であ
る。FIG. 1 is a view showing an overall arrangement of a polishing apparatus according to the present invention.

【図２】仕上げ研磨ユニットの断面図である。FIG. 2 is a sectional view of a finish polishing unit.

【図３】図２の定盤の縁部の支持部を拡大して示すモー
タ側の平面図及び断面図である。3A and 3B are a plan view and a cross-sectional view of a motor side, on which a support portion at an edge of the surface plate of FIG. 2 is enlarged.

【図４】仕上げ研磨ユニット他の実施の形態を示す斜視
図である。FIG. 4 is a perspective view showing another embodiment of the finish polishing unit.

【図５】従来の研磨装置を示す斜視図である。FIG. 5 is a perspective view showing a conventional polishing apparatus.

【図６】従来の研磨ユニットの断面図である。FIG. 6 is a sectional view of a conventional polishing unit.

【符号の説明】[Explanation of symbols]

１ 基板（ウエハ） １０ 主研磨ユニット（第１の研磨部） １１ 研磨布（研磨工具） １２ ターンテーブル １３ トップリング（押圧手段） ３０ 仕上げ研磨ユニット（第２の研磨部） ５７，５８ 研磨液供給孔 ５９ 研磨布（研磨工具） ３２ トップリング（押圧手段） ３３ モータ（駆動手段） ３５ 支持板（基台） ３６ 支持部 ３７ 定盤 ４４ 連結部材 Reference Signs List 1 substrate (wafer) 10 main polishing unit (first polishing unit) 11 polishing cloth (polishing tool) 12 turntable 13 top ring (pressing means) 30 finish polishing unit (second polishing unit) 57, 58 supply of polishing liquid Hole 59 Polishing cloth (polishing tool) 32 Top ring (pressing means) 33 Motor (driving means) 35 Support plate (base) 36 Support section 37 Surface plate 44 Connecting member

Claims (12)

【特許請求の範囲】[Claims] 【請求項１】 自転する第１の研磨工具面に基板の被研
磨面を所定の圧力で押圧しながら研磨を行なう第１の工
程と、 上記基板の被研磨面に対して所定の軌跡で平面相対並進
運動を行なう第２の研磨工具面に上記基板の被研磨面を
所定の圧力で押圧しながら処理を行なう第２の工程とを
有することを特徴とする基板の研磨方法。A first step of performing polishing while pressing a surface to be polished of a substrate against a surface of a first polishing tool which rotates by a predetermined pressure; A step of performing a process while pressing the surface to be polished of the substrate with a predetermined pressure against a surface of a second polishing tool which performs relative translation motion. 【請求項２】 上記第２の工程において、上記並進運動
は所定のパターンを有する循環運動であることを特徴と
する請求項１に記載の基板の研磨方法。2. The method according to claim 1, wherein, in the second step, the translational movement is a circulating movement having a predetermined pattern. 【請求項３】 上記第２の工程において、上記並進運動
は上記第２の研磨工具を動かすことにより与えられるこ
とを特徴とする請求項１に記載の基板の研磨方法。3. The method according to claim 1, wherein, in the second step, the translation is provided by moving the second polishing tool. 【請求項４】 上記第２の工程において、上記並進運動
は不規則な運動であることを特徴とする請求項１に記載
の基板の研磨方法。4. The method according to claim 1, wherein in the second step, the translational movement is an irregular movement. 【請求項５】 上記第２の工程において、上記不規則な
並進運動は、２つの直線運動のベクトル和として与えら
れることを特徴とする請求項１に記載の基板の研磨方
法。5. The method according to claim 1, wherein, in the second step, the irregular translational motion is given as a vector sum of two linear motions. 【請求項６】 上記第１の研磨工具面に対する上記基板
の被研磨面の押圧圧力が２００〜５００ｇ／ｃｍ2であ
り、上記第２の研磨工具面に対する上記基板の被研磨面
の押圧圧力が０〜２００ｇ／ｃｍ2であることを特徴と
する請求項１に記載の基板の研磨方法。6. The pressing pressure of the polished surface of the substrate against the first polishing tool surface is 200 to 500 g / cm 2 , and the pressing pressure of the polished surface of the substrate against the second polishing tool surface. the polishing method of substrate according to claim 1, characterized in that the 0 to 200 g / cm 2. 【請求項７】 研磨面に沿って自転可能な第１の研磨工
具と、その研磨面に基板の被研磨面を所定の圧力で押圧
可能な押圧手段とを有する第１の研磨部と、上記基板の
被研磨面に対して所定の軌跡で相対並進運動可能な第２
の研磨工具と、その研磨面に基板の被研磨面を所定の圧
力で押圧する押圧手段とを有する第２の研磨部を有する
ことを特徴とする基板の研磨装置。7. A first polishing unit having a first polishing tool rotatable along a polishing surface, and a pressing means capable of pressing a surface to be polished of a substrate at a predetermined pressure on the polishing surface, A second translational movement relative to the polished surface of the substrate along a predetermined trajectory
A substrate polishing apparatus, comprising: a polishing tool having a second polishing section having a polishing tool, and pressing means for pressing a surface to be polished of the substrate at a predetermined pressure on the polishing surface. 【請求項８】 上記第１の研磨工具面に対する上記基板
の被研磨面の押圧圧力が２００〜５００ｇ／ｃｍ2であ
り、上記第２の研磨工具面に対する上記基板の被研磨面
の押圧圧力が０〜２００ｇ／ｃｍ2であることを特徴と
する請求項７に記載の基板の研磨装置。8. The pressing pressure of the polished surface of the substrate against the first polishing tool surface is 200 to 500 g / cm 2 , and the pressing pressure of the polished surface of the substrate against the second polishing tool surface. polishing device substrate according to claim 7, characterized in that the 0 to 200 g / cm 2. 【請求項９】 基台と、上面に研磨工具を取り付け可能
な定盤と、上記基台上において上記定盤を循環並進運動
可能に支持する支持部と、上記定盤を循環並進運動させ
る駆動手段とを有することを特徴とする基板の研磨装
置。9. A base, a surface plate to which a polishing tool can be mounted on an upper surface, a support portion for supporting the surface plate so as to be capable of circulating translation on the base, and a drive for circulating and translating the surface plate. Means for polishing a substrate, comprising: 【請求項１０】 上記支持部は、上記定盤をその縁部の
少なくとも３箇所以上で支持することを特徴とする請求
項９に記載の研磨装置。10. The polishing apparatus according to claim 9, wherein said support portion supports said platen at at least three or more edges thereof. 【請求項１１】 上記定盤には、研磨工具の研磨面に向
けて開口する研磨液供給流路が設けられていることを特
徴とする請求項９に記載の研磨装置。11. The polishing apparatus according to claim 9, wherein the surface plate is provided with a polishing liquid supply flow path that opens toward a polishing surface of the polishing tool. 【請求項１２】 基台と、上面に研磨工具を取り付け可
能な定盤と、上記定盤を第１の方向に直線運動可能に支
持する第１の支持部と、上記第１の支持部を第１の方向
とは異なる第２の方向に直線運動可能に支持する第２の
支持部と、上記定盤、上記第１の支持部、第２の支持部
を直線運動させる駆動手段とを有することを特徴とする
基板の研磨装置。12. A base, a surface plate to which a polishing tool can be attached on an upper surface, a first support portion for supporting the surface plate so as to be linearly movable in a first direction, and the first support portion. A second support portion that supports linear movement in a second direction different from the first direction; and a driving unit that linearly moves the base, the first support portion, and the second support portion. An apparatus for polishing a substrate, comprising:
JP14312997A 1996-05-16 1997-05-16 Polishing method and device for substrate Pending JPH1058317A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14312997A JPH1058317A (en) 1996-05-16 1997-05-16 Polishing method and device for substrate
KR1019970018840A KR100496916B1 (en) 1996-05-16 1997-05-16 Polishing method and apparatus of workpiece

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP14677696 1996-05-16
JP8-146776 1996-05-16
JP14312997A JPH1058317A (en) 1996-05-16 1997-05-16 Polishing method and device for substrate

Publications (1)

Publication Number Publication Date
JPH1058317A true JPH1058317A (en) 1998-03-03

Family

ID=26474932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14312997A Pending JPH1058317A (en) 1996-05-16 1997-05-16 Polishing method and device for substrate

Country Status (2)

Country Link
JP (1) JPH1058317A (en)
KR (1) KR100496916B1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100632412B1 (en) * 1998-11-06 2006-10-09 가부시키가이샤 에바라 세이사꾸쇼 Cleaning equipment
KR100710915B1 (en) * 1999-03-05 2007-04-26 가부시키가이샤 에바라 세이사꾸쇼 Polishing apparatus
JP2011249837A (en) * 2005-09-15 2011-12-08 Fujitsu Semiconductor Ltd Method of manufacturing semiconductor device, polishing device, and polishing system
WO2012018215A3 (en) * 2010-08-02 2012-03-29 주식회사 엘지화학 Large substrate, and polishing method of large substrate for uniform polishing
CN111272504A (en) * 2018-12-04 2020-06-12 广西大学 Metallographic specimen mechanical thinning device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3920465B2 (en) * 1998-08-04 2007-05-30 信越半導体株式会社 Polishing method and polishing apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100632412B1 (en) * 1998-11-06 2006-10-09 가부시키가이샤 에바라 세이사꾸쇼 Cleaning equipment
KR100710915B1 (en) * 1999-03-05 2007-04-26 가부시키가이샤 에바라 세이사꾸쇼 Polishing apparatus
JP2011249837A (en) * 2005-09-15 2011-12-08 Fujitsu Semiconductor Ltd Method of manufacturing semiconductor device, polishing device, and polishing system
WO2012018215A3 (en) * 2010-08-02 2012-03-29 주식회사 엘지화학 Large substrate, and polishing method of large substrate for uniform polishing
US8888560B2 (en) 2010-08-02 2014-11-18 Lg Chem, Ltd. Method for uniformly polishing large scale plate
CN111272504A (en) * 2018-12-04 2020-06-12 广西大学 Metallographic specimen mechanical thinning device

Also Published As

Publication number Publication date
KR100496916B1 (en) 2005-09-30
KR970073869A (en) 1997-12-10

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