TW202112496A - Polishing device, polishing method and substrate processing device - Google Patents

Polishing device, polishing method and substrate processing device Download PDF

Info

Publication number
TW202112496A
TW202112496A TW109123683A TW109123683A TW202112496A TW 202112496 A TW202112496 A TW 202112496A TW 109123683 A TW109123683 A TW 109123683A TW 109123683 A TW109123683 A TW 109123683A TW 202112496 A TW202112496 A TW 202112496A
Authority
TW
Taiwan
Prior art keywords
substrate
polishing
element surface
wafer
cleaning
Prior art date
Application number
TW109123683A
Other languages
Chinese (zh)
Inventor
中西正行
Original Assignee
日商荏原製作所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商荏原製作所股份有限公司 filed Critical 日商荏原製作所股份有限公司
Publication of TW202112496A publication Critical patent/TW202112496A/en

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/06—Dust extraction equipment on grinding or polishing machines
    • B24B55/08—Dust extraction equipment on grinding or polishing machines specially designed for belt grinding machines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to a polishing device and a polishing method for polishing the back side of a substrate such as a wafer. The present invention further relates to a substrate processing device provided with the polishing device. This polishing device is provided with a substrate holding unit (10) which holds a substrate (W) in a state with the device surface (2) thereof facing upwards and which rotates the substrate (W); a polishing tool (31) which contacts a non-device surface (1) of the substrate (W) and polishes the non-device surface (1) of said substrate (W); and a contactless washing mechanism (30) which washes the device surface (2) of the substrate (W) while the non-device surface (1) of the substrate (W) is processed with the polishing tool (31).

Description

研磨裝置、研磨方法、及基板處理裝置Grinding device, grinding method, and substrate processing device

本發明係關於一種研磨晶圓等之基板背面的研磨裝置及研磨方法。再者，本發明係關於一種具備研磨裝置之基板處理裝置。The present invention relates to a polishing device and a polishing method for polishing the back surface of a substrate such as a wafer. Furthermore, the present invention relates to a substrate processing apparatus equipped with a polishing device.

近年來，記憶體電路、邏輯電路、影像感測器（例如CMOS感測器）等之元件不斷高積體化。在形成此等元件之工序中，微粒子及塵埃等異物會附著於元件。附著於元件之異物會造成配線間短路及電路故障。因此，為了使元件之可靠性提高，需要清洗形成了元件之基板（例如，晶圓），來除去基板上之異物。In recent years, memory circuits, logic circuits, image sensors (such as CMOS sensors) and other components have become increasingly integrated. In the process of forming these components, foreign matter such as particles and dust will adhere to the components. Foreign objects attached to the components can cause short circuits between wiring and circuit failures. Therefore, in order to improve the reliability of the device, it is necessary to clean the substrate (for example, wafer) on which the device is formed to remove foreign matter on the substrate.

上述之微粒子及粉塵等異物也會附著於基板的背面（非元件面）。此種異物附著於基板背面時，會導致基板從曝光裝置之載台基準面離開，或是基板表面（元件面）對載台基準面傾斜，結果產生圖案偏差及焦點距離偏差。為了防止此種問題發生，需要除去附著於基板背面之異物。The above-mentioned foreign matter such as particles and dust will also adhere to the back surface of the substrate (non-component surface). When this kind of foreign matter adheres to the back of the substrate, it will cause the substrate to separate from the base surface of the exposure device, or the substrate surface (component surface) will tilt to the base surface of the stage, resulting in pattern deviation and focus distance deviation. In order to prevent this problem, it is necessary to remove foreign matter adhering to the back of the substrate.

因此，過去係使用研磨基板之背面，而除去附著於該背面之異物的研磨裝置（例如，參照專利文獻1）。另外，本說明書係將並未形成元件，或是不預定形成元件之基板的背面定義為「非元件面」，並將形成有元件，或是預定形成元件之基板的表面定義為「元件面」。Therefore, in the past, a polishing apparatus was used to polish the back surface of the substrate to remove foreign matter adhering to the back surface (for example, refer to Patent Document 1). In addition, this specification defines the back surface of the substrate on which no element is formed or is not scheduled to be formed as the "non-element surface", and the surface of the substrate on which the element is formed or is scheduled to be formed is defined as the "element surface" .

記載於專利文獻1之研磨裝置係在基板之非元件面朝下的狀態下，有效地研磨基板之整個非元件面。因此，不需要為了研磨基板之非元件面而使該基板反轉，因此可防止空氣中之雜質附著於基板，且可減少整個研磨裝置之處理時間。再者，此種研磨裝置例如係設於可進行研磨、清洗基板之非研磨面，並使其乾燥之一連串工序的基板處理裝置。此時，因為不需要使基板反轉之反轉機，所以可單純構成基板處理裝置，並削減費用。 [先前技術文獻] [專利文獻]The polishing device described in Patent Document 1 effectively polishes the entire non-element surface of the substrate with the non-element surface of the substrate facing down. Therefore, there is no need to invert the substrate for polishing the non-element surface of the substrate. Therefore, impurities in the air can be prevented from adhering to the substrate, and the processing time of the entire polishing device can be reduced. Furthermore, such a polishing device is, for example, a substrate processing device that can perform a series of steps of polishing, cleaning, and drying the non-polished surface of the substrate. In this case, since there is no need for a reversing machine for reversing the substrate, the substrate processing apparatus can be simply constructed and the cost can be reduced. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本特開2019-077003號公報[Patent Document 1] Japanese Patent Application Publication No. 2019-077003

（發明所欲解決之問題）(The problem to be solved by the invention)

即使是在基板之非元件面朝下的狀態下，研磨該非元件面之研磨裝置，仍有可能於基板研磨中發生之研磨屑及/或包含該研磨屑之沖洗液等的異物會繞進基板之元件面，而污染該基板的元件面。因而，記載於專利文獻1之研磨裝置具有在研磨基板之非元件面中，在元件面上供給保護液（例如純水）之保護液供給噴嘴。藉由保護液覆蓋元件面，防止非元件面之研磨中發生的異物污染基板之元件面。Even when the non-element surface of the substrate is facing down, the polishing device that grinds the non-element surface may still cause the polishing debris and/or foreign matter containing the polishing debris to enter the substrate during the polishing of the substrate. The component surface of the substrate contaminates the component surface of the substrate. Therefore, the polishing apparatus described in Patent Document 1 has a protective liquid supply nozzle for supplying a protective liquid (for example, pure water) on the non-element surface of the polishing substrate on the element surface. By covering the component surface with the protective liquid, the foreign matter generated during the polishing of the non-component surface is prevented from contaminating the component surface of the substrate.

但是，為了進一步謀求形成於基板之元件面的元件之可靠性提高，在非元件面之研磨中儘量避免基板之元件面受到污染，亦即，儘量避免異物附著於基板之元件面很重要。再者，基板研磨中若元件面上附著大量異物時，為了除去該異物，需要比較長時間清洗基板。例如，需要以基板處理裝置之清洗單元比較長時間清洗研磨後之基板的元件面，結果，也可能造成基板處理裝置之處理量降低。因此，為了謀求減輕在基板研磨處理後進行之該基板清洗處理的負擔，提高基板處理裝置之處理量，在基板之非元件面的研磨中儘量避免異物附著於元件面很重要。However, in order to further improve the reliability of the components formed on the component surface of the substrate, it is important to avoid contamination of the component surface of the substrate as much as possible during the polishing of the non-component surface, that is, to prevent foreign matter from adhering to the component surface of the substrate as much as possible. Furthermore, when a large amount of foreign matter adheres to the element surface during substrate polishing, it takes a relatively long time to clean the substrate in order to remove the foreign matter. For example, it is necessary to use the cleaning unit of the substrate processing apparatus to clean the element surface of the substrate after polishing for a relatively long time. As a result, the throughput of the substrate processing apparatus may also be reduced. Therefore, in order to reduce the burden of the substrate cleaning process performed after the substrate polishing process and increase the throughput of the substrate processing apparatus, it is important to avoid foreign matter adhering to the element surface as much as possible during the polishing of the non-element surface of the substrate.

因此，本發明之目的為提供一種在其元件面朝上狀態下保持基板，來研磨該基板之非元件面的期間，可防止異物污染基板之元件面的研磨裝置、及研磨方法。此外，本發明之目的為提供一種具有此種研磨裝置之基板處理裝置。 （解決問題之手段）Therefore, the object of the present invention is to provide a polishing device and a polishing method that can prevent foreign matter from contaminating the component surface of the substrate while polishing the non-component surface of the substrate while holding the substrate with the component surface facing up. In addition, the object of the present invention is to provide a substrate processing apparatus having such a polishing apparatus. (Means to solve the problem)

一個樣態係提供一種研磨裝置，其特徵為具備：基板保持部，其係在其元件面朝上之狀態下保持基板，並使該基板旋轉；研磨具，其係與前述基板之非元件面接觸，來研磨該基板之非元件面；及非接觸式清洗機構，其係在以前述研磨具研磨前述基板之非元件面期間，清洗前述基板之元件面。One aspect is to provide a polishing device, which is characterized by having: a substrate holding portion, which holds the substrate with its component surface facing upwards, and rotates the substrate; and the polishing tool is similar to the non-component surface of the aforementioned substrate. Contact to polish the non-element surface of the substrate; and a non-contact cleaning mechanism, which cleans the element surface of the substrate during the polishing of the non-element surface of the substrate with the abrasive tool.

一個樣態係前述非接觸式清洗機構具有：清洗流體噴嘴，其係朝向前述基板之元件面噴射清洗流體；及噴嘴移動機構，其係使前述清洗流體噴嘴在前述基板之元件面的上方移動。 一個樣態係前述清洗流體噴嘴係使雙流體噴流朝向前述基板之元件面噴射的雙流體噴流噴嘴。 一個樣態係前述非接觸式清洗機構進一步包含臭氧發生器，前述清洗流體噴嘴朝向前述基板之元件面噴射臭氧水、或臭氧微氣泡水。One aspect is that the non-contact cleaning mechanism has: a cleaning fluid nozzle that sprays cleaning fluid toward the element surface of the substrate; and a nozzle moving mechanism that moves the cleaning fluid nozzle above the element surface of the substrate. One aspect is that the cleaning fluid nozzle is a two-fluid jet nozzle that sprays a two-fluid jet toward the element surface of the substrate. One aspect is that the non-contact cleaning mechanism further includes an ozone generator, and the cleaning fluid nozzle sprays ozone water or ozone microbubble water toward the element surface of the substrate.

一個樣態係前述非接觸式清洗機構進一步包含電解水產生機，前述清洗流體噴嘴朝向前述基板之元件面噴射電解水。 一個樣態係前述清洗流體噴嘴朝向前述基板之元件面噴射超音波水或藥劑。 一個樣態係前述研磨裝置進一步具備保護液供給噴嘴，其係在前述基板之元件面供給保護液。One aspect is that the non-contact cleaning mechanism further includes an electrolyzed water generator, and the cleaning fluid nozzle sprays electrolyzed water toward the element surface of the substrate. One aspect is that the cleaning fluid nozzle sprays ultrasonic water or medicament toward the element surface of the substrate. In one aspect, the polishing apparatus further includes a protection liquid supply nozzle, which supplies the protection liquid to the element surface of the substrate.

一個樣態係提供一種研磨方法，其特徵為：在其元件面朝上之狀態下保持基板，並使該基板旋轉，將研磨具按壓於前述旋轉之基板的非元件面來研磨該非元件面，在研磨前述基板之非元件面的期間，以非接觸式清洗機構清洗前述基板之元件面。One aspect is to provide a polishing method, which is characterized in that the substrate is held with the element surface facing upward, the substrate is rotated, and the polishing tool is pressed against the non-element surface of the rotating substrate to polish the non-element surface, During the polishing of the non-element surface of the substrate, the element surface of the substrate is cleaned by a non-contact cleaning mechanism.

一個樣態係前述基板之元件面的清洗，係藉由使清洗流體噴嘴在前述基板之元件面的上方移動，並從該清洗流體噴嘴噴射清洗流體至前述基板之元件面來進行。 一個樣態係前述清洗流體噴嘴朝向前述基板之元件面噴射雙流體噴流。 一個樣態係前述清洗流體噴嘴朝向前述基板之元件面噴射臭氧水、或臭氧微氣泡水。One aspect is that the cleaning of the component surface of the substrate is performed by moving a cleaning fluid nozzle above the component surface of the substrate, and spraying the cleaning fluid from the cleaning fluid nozzle to the component surface of the substrate. One aspect is that the cleaning fluid nozzle sprays a two-fluid jet toward the element surface of the substrate. One aspect is that the cleaning fluid nozzle sprays ozone water or ozone microbubble water toward the element surface of the substrate.

一個樣態係前述清洗流體噴嘴朝向前述基板之元件面噴射電解水。 一個樣態係前述清洗流體噴嘴朝向前述基板之元件面噴射超音波水或藥劑。 一個樣態係在研磨前述基板之非元件面期間，進一步供給保護液至前述基板的元件面。One aspect is that the cleaning fluid nozzle sprays electrolytic water toward the element surface of the substrate. One aspect is that the cleaning fluid nozzle sprays ultrasonic water or medicament toward the element surface of the substrate. One aspect is that during the polishing of the non-element surface of the substrate, a protective liquid is further supplied to the element surface of the substrate.

一個樣態係提供一種基板處理裝置，其特徵為具備：上述研磨裝置；清洗單元，其係清洗藉由前述研磨裝置所研磨之基板；及乾燥單元，其係使被前述清洗單元所清洗之基板乾燥。 一個樣態係前述清洗單元係僅清洗前述基板之非元件面。 （發明之效果）One aspect is to provide a substrate processing apparatus, which is characterized by comprising: the above-mentioned polishing device; a cleaning unit that cleans the substrate polished by the foregoing polishing device; and a drying unit that makes the substrate cleaned by the foregoing cleaning unit dry. One aspect is that the cleaning unit cleans only the non-element surface of the substrate. (Effects of Invention)

採用本發明時，在研磨具研磨基板之非元件面的期間，係藉由非接觸式清洗機構積極清洗基板之元件面。因此，可有效防止異物污染基板之元件面，結果，元件之可靠性提高。再者，即使在研磨基板的非元件面之後，由於基板之元件面上幾乎不附著異物，因此，可減輕基板之研磨處理後進行的該基板之清洗處理的負擔，並且謀求縮短清洗處理花費之時間。When the present invention is adopted, the non-contact cleaning mechanism is used to actively clean the component surface of the substrate while the polishing tool is polishing the non-component surface of the substrate. Therefore, it is possible to effectively prevent foreign matter from contaminating the component surface of the substrate, and as a result, the reliability of the component is improved. Furthermore, even after polishing the non-element surface of the substrate, since almost no foreign matter adheres to the element surface of the substrate, it is possible to reduce the burden of the cleaning process of the substrate after the polishing process of the substrate, and to reduce the cost of the cleaning process. time.

以下，參照圖式說明本發明之實施形態。 圖1係顯示研磨裝置之一種實施形態的模式圖。圖1所示之研磨裝置具備：保持基板之一例的晶圓W，並將其軸心作為中心而使其旋轉的基板保持部10；使研磨具之一例的研磨帶31與保持於該基板保持部10之晶圓W的第一面1接觸，來研磨晶圓W之第一面1的研磨頭50；將研磨帶31供給至研磨頭50之研磨帶供給機構41；及使研磨頭50及研磨帶供給機構41平移旋轉運動之平移旋轉運動機構60。Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a schematic diagram showing an embodiment of the polishing device. The polishing apparatus shown in FIG. 1 includes: a substrate holding portion 10 that holds a wafer W as an example of a substrate and rotates it with its axis as the center; and holds a polishing belt 31 as an example of an abrasive tool and held on the substrate. The first surface 1 of the wafer W of the portion 10 contacts to grind the polishing head 50 of the first surface 1 of the wafer W; the polishing tape supply mechanism 41 that supplies the polishing tape 31 to the polishing head 50; and makes the polishing head 50 and The polishing tape supply mechanism 41 is a translational and rotational movement mechanism 60 that performs translational and rotational movement.

基板保持部10具備可接觸於晶圓W之周緣部的複數個軋輥11。研磨頭50配置在保持於基板保持部10之晶圓W的下側。平移旋轉運動機構60配置於研磨頭50及研磨帶供給機構41之下方，研磨頭50及研磨帶供給機構41連結於平移旋轉運動機構60。圖1係省略基板保持部10之一部分的圖示。The substrate holding portion 10 includes a plurality of rolls 11 that can be in contact with the peripheral edge portion of the wafer W. The polishing head 50 is arranged on the lower side of the wafer W held by the substrate holding portion 10. The translation and rotation movement mechanism 60 is disposed below the polishing head 50 and the polishing tape supply mechanism 41, and the polishing head 50 and the polishing tape supply mechanism 41 are connected to the translation and rotation movement mechanism 60. FIG. 1 omits the illustration of a part of the substrate holding portion 10.

本實施形態係晶圓W之第一面1並未形成元件，或是不預定形成元件之晶圓W的背面，亦即非元件面。與第一面1相反側之晶圓W的第二面2係形成有元件，或是預定形成元件之面，亦即元件面。以下，係將晶圓W之第一面1稱為「非元件面1」，並將晶圓W之第二面2稱為「元件面2」。本實施形態之晶圓W係在其非元件面1朝下狀態下水平地保持於基板保持部10。In this embodiment, the first side 1 of the wafer W has no elements formed, or the back surface of the wafer W where elements are not scheduled to be formed, that is, the non-element surface. The second surface 2 of the wafer W on the side opposite to the first surface 1 has elements formed thereon, or a surface where elements are scheduled to be formed, that is, an element surface. Hereinafter, the first side 1 of the wafer W is referred to as "non-element side 1", and the second side 2 of the wafer W is referred to as "element side 2". The wafer W of this embodiment is horizontally held by the substrate holding portion 10 with its non-element surface 1 facing downward.

圖2係詳係顯示基板保持部10之模式圖，圖3係顯示圖2所示之軋輥旋轉機構12的俯視圖。基板保持部10具備：可與晶圓W之周緣部接觸的複數個軋輥11；及使此等軋輥11以各個軸心為中心而旋轉之軋輥旋轉機構12。本實施形態設有4個軋輥11。亦可設置5個以上的軋輥11。與晶圓W之周緣部接觸時的（亦即保持晶圓W時的）上述複數個軋輥11自基板保持部10之軸心CP起為相同距離。FIG. 2 is a schematic view showing the substrate holding portion 10 in detail, and FIG. 3 is a plan view showing the roll rotating mechanism 12 shown in FIG. 2. The substrate holding portion 10 includes a plurality of rolls 11 that can be in contact with the peripheral edge portion of the wafer W, and a roll rotation mechanism 12 that rotates the rolls 11 around each axis. In this embodiment, four rolls 11 are provided. More than 5 rolls 11 can also be provided. The plurality of rolls 11 mentioned above when in contact with the peripheral edge portion of the wafer W (that is, when holding the wafer W) are at the same distance from the axis CP of the substrate holding portion 10.

軋輥旋轉機構12具備：連結4個軋輥11中之2個的第一皮帶14A；與第一皮帶14A所連結之2個軋輥11中的一方連結之第一馬達15A；支撐第一馬達15A之第一馬達支撐體25A；可旋轉地支撐第一皮帶14A所連結之2個軋輥11的第一軋輥座16A；連結4個軋輥11中之其他2個的第二皮帶14B；與第二皮帶14B所連結之2個軋輥11中的一方連結之第二馬達15B；支撐第二馬達15B之第二馬達支撐體25B；及經由軸承24B可旋轉地支撐第二皮帶14B所連結之2個軋輥11的第二軋輥座16B。第一軋輥座16A具備：上側第一軋輥座17A、及下側第一軋輥座17B。第一馬達15A及第一皮帶14A配置於第一軋輥座16A之下方，第二馬達15B及第二皮帶14B配置於第二軋輥座16B的下方。第一馬達15A經由第一馬達支撐體25A而固定於第一軋輥座16A。第二馬達15B經由第二馬達支撐體25B而固定於第二軋輥座16B的下面。The roll rotation mechanism 12 includes: a first belt 14A that connects two of the four rolls 11; a first motor 15A that is connected to one of the two rolls 11 connected to the first belt 14A; and a first motor 15A that supports the first motor 15A A motor support body 25A; a first roll stand 16A that rotatably supports the two rolls 11 connected to the first belt 14A; a second belt 14B that connects the other two of the four rolls 11; and the second belt 14B The second motor 15B connected to one of the two connected rolls 11; the second motor support body 25B supporting the second motor 15B; and the second motor supporting body 25B that rotatably supports the two rolls 11 connected to the second belt 14B via the bearing 24B Two roll stand 16B. The first roll stand 16A includes an upper first roll stand 17A and a lower first roll stand 17B. The first motor 15A and the first belt 14A are arranged under the first roll stand 16A, and the second motor 15B and the second belt 14B are arranged under the second roll stand 16B. The first motor 15A is fixed to the first roll stand 16A via the first motor support body 25A. The second motor 15B is fixed to the lower surface of the second roll stand 16B via the second motor support body 25B.

圖4係圖3之A－A線剖面圖。如圖4所示，第一軋輥座16A具備：經由軸承24A（參照圖2）可旋轉地支撐第一皮帶14A所連結之2個軋輥11的下側第一軋輥座17B；固定於下側第一軋輥座17B之樞軸17C；及經由軸承24C可旋轉地支撐樞軸17C的上側第一軋輥座17A。上側第一軋輥座17A與下側第一軋輥座17B經由樞軸17C而彼此連結。如圖3所示，樞軸17C位於第一皮帶14A所連結的2個軋輥11之間。如圖2所示，第一馬達15A經由第一馬達支撐體25A而固定於下側第一軋輥座17B的下面。因此，第一皮帶14A、第一皮帶14A所連結之2個軋輥11、下側第一軋輥座17B、第一馬達15A、及第一馬達支撐體25A可一體地以樞軸17C為中心而旋轉。Figure 4 is a cross-sectional view taken along line A-A in Figure 3. As shown in FIG. 4, the first roll stand 16A includes: a lower first roll stand 17B that rotatably supports the two rolls 11 connected by the first belt 14A via a bearing 24A (refer to FIG. 2); A pivot 17C of a roll stand 17B; and a first roll stand 17A on the upper side that rotatably supports the pivot 17C via a bearing 24C. The upper first roll stand 17A and the lower first roll stand 17B are connected to each other via a pivot shaft 17C. As shown in FIG. 3, the pivot 17C is located between the two rollers 11 connected by the 1st belt 14A. As shown in FIG. 2, the first motor 15A is fixed to the lower surface of the lower first roll stand 17B via the first motor support body 25A. Therefore, the first belt 14A, the two rolls 11 connected by the first belt 14A, the lower first roll stand 17B, the first motor 15A, and the first motor support body 25A can integrally rotate around the pivot 17C. .

軋輥旋轉機構12係以使4個軋輥11在相同方向以相同速度旋轉之方式構成。在晶圓W之非元件面1的研磨中，晶圓W之周緣部藉由軋輥11握持。晶圓W保持水平，並藉由軋輥11之旋轉而以其軸心為中心而旋轉晶圓W。晶圓W之非元件面1的研磨中，4個軋輥11係以各個軸心為中心而旋轉，不過軋輥11本身之位置係靜止。The roll rotation mechanism 12 is configured to rotate the four rolls 11 in the same direction and at the same speed. In the polishing of the non-element surface 1 of the wafer W, the peripheral edge portion of the wafer W is held by the roller 11. The wafer W is kept horizontal, and the wafer W is rotated centered on its axis by the rotation of the roller 11. In the polishing of the non-element surface 1 of the wafer W, the four rolls 11 rotate around the respective axis, but the position of the roll 11 itself is stationary.

在4個軋輥11之下部分別固定有滑輪22。第一皮帶14A掛在固定於4個軋輥11中之2個的滑輪22上，第二皮帶14B掛在固定於其他2個軋輥11之滑輪22上。第一馬達15A及第二馬達15B係以相同速度在相同方向旋轉之方式構成。因此，4個軋輥11可以相同速度在相同方向旋轉。Pulleys 22 are fixed to the lower parts of the four rolls 11, respectively. The first belt 14A is hung on the pulley 22 fixed to two of the four rollers 11, and the second belt 14B is hung on the pulley 22 fixed to the other two rollers 11. The first motor 15A and the second motor 15B are configured to rotate in the same direction at the same speed. Therefore, the four rolls 11 can rotate in the same direction at the same speed.

如圖3所示，軋輥旋轉機構12進一步具備：連結於第一軋輥座16A之上側第一軋輥座17A的第一致動器18A；及連結於第二軋輥座16B之第二致動器18B。第一致動器18A如箭頭所示地使被第一軋輥座16A支撐之2個軋輥11在水平方向移動。同樣地，第二致動器18B如箭頭所示地使被第二軋輥座16B支撐之其他2個軋輥11在水平方向移動。亦即，第一致動器18A及第二致動器18B係構成使兩組軋輥11（本實施形態中各組由2個軋輥11構成）在彼此靠近方向及分離方向移動。第一致動器18A及第二致動器18B可由空氣汽缸或馬達驅動型致動器等構成。圖2及圖3之實施形態中，第一致動器18A及第二致動器18B係由空氣汽缸構成。第一致動器18A及第二致動器18B固定於底板23之下面。As shown in FIG. 3, the roll rotation mechanism 12 further includes: a first actuator 18A connected to the first roll stand 17A above the first roll stand 16A; and a second actuator 18B connected to the second roll stand 16B . The first actuator 18A moves the two rolls 11 supported by the first roll stand 16A in the horizontal direction as shown by the arrow. Similarly, the second actuator 18B moves the other two rolls 11 supported by the second roll stand 16B in the horizontal direction as shown by the arrow. That is, the first actuator 18A and the second actuator 18B are configured to move two sets of rolls 11 (each set is composed of two rolls 11 in the present embodiment) in a direction toward and apart from each other. The first actuator 18A and the second actuator 18B may be composed of an air cylinder, a motor-driven actuator, or the like. In the embodiment of FIGS. 2 and 3, the first actuator 18A and the second actuator 18B are composed of air cylinders. The first actuator 18A and the second actuator 18B are fixed under the bottom plate 23.

軋輥11貫穿底板23而延伸至上方。在底板23之下面固定有第一直接傳動導桿26A及第二直接傳動導桿26B。第一直接傳動導桿26A之活動部連結於上側第一軋輥座17A，第二直接傳動導桿26B之活動部連結於第二軋輥座16B。2個直接傳動導桿26A、26B限制軋輥11之行動向水平方向直線運動。The roll 11 penetrates the bottom plate 23 and extends upward. A first direct drive guide rod 26A and a second direct drive guide rod 26B are fixed under the bottom plate 23. The movable part of the first direct drive guide rod 26A is connected to the upper first roll stand 17A, and the movable part of the second direct drive guide rod 26B is connected to the second roll stand 16B. Two direct drive guide rods 26A, 26B restrict the movement of the roll 11 to linearly move in the horizontal direction.

兩組之軋輥11在彼此靠近的方向移動時，晶圓W藉由4個軋輥11保持。由於4個軋輥11中之2個可在樞軸17C之周圍旋轉，因此4個軋輥11保持晶圓W時，可自動調整上述2個軋輥11之位置。兩組之軋輥11在彼此分離的方向移動時，從4個軋輥11釋放晶圓W。本實施形態係設有在基板保持部10之軸心CP周圍排列的4個軋輥11，不過，軋輥11數量不限定於4個。例如，亦可以120度之角度等間隔地在軸心CP周圍排列3個軋輥11，並對各個軋輥11逐一設置致動器。一個實施形態亦可以120度之角度等間隔地在軸心CP周圍排列3個軋輥11，並以第一皮帶14A連結3個軋輥11中的2個，並對第一皮帶14A所連結之2個軋輥11、與未被第一皮帶14A連結的軋輥11逐一設置致動器。When the two sets of rollers 11 move in a direction close to each other, the wafer W is held by the four rollers 11. Since two of the four rollers 11 can rotate around the pivot 17C, the positions of the two rollers 11 can be automatically adjusted when the four rollers 11 hold the wafer W. When the rollers 11 of the two groups move in a direction apart from each other, the wafer W is released from the four rollers 11. In the present embodiment, four rolls 11 arranged around the axis CP of the substrate holding portion 10 are provided, but the number of rolls 11 is not limited to four. For example, three rolls 11 may be arranged around the axis CP at equal intervals at an angle of 120 degrees, and an actuator may be provided for each roll 11 one by one. One embodiment can also arrange three rolls 11 at equal intervals around the axis CP at an angle of 120 degrees, and connect two of the three rolls 11 with the first belt 14A, and connect the two with the first belt 14A. The roller 11 and the roller 11 not connected with the first belt 14A are provided with actuators one by one.

圖5係放大顯示軋輥11之上部一例的模式圖。軋輥11具有：可接觸晶圓W之周緣部的圓筒狀之基板保持面11a；及連接於基板保持面11a，且從基板保持面11a向下方傾斜之錐形面11b。錐形面11b具有圓錐梯形狀，且具有比基板保持面11a大之直徑。晶圓W首先藉由無圖示之搬送裝置裝載於錐形面11b上，然後，藉由軋輥11朝向晶圓W移動，而將晶圓W之周緣部保持於基板保持面11a。當軋輥11釋放晶圓W時，藉由軋輥11在從晶圓W離開的方向上移動，晶圓W之周緣部從基板保持面11a離開而被錐形面11b支撐（參照圖5之虛線）。無圖示之搬送裝置可取出錐形面11b上之晶圓W。FIG. 5 is an enlarged schematic diagram showing an example of the upper part of the roll 11. The roll 11 has a cylindrical substrate holding surface 11a that can contact the peripheral edge of the wafer W, and a tapered surface 11b connected to the substrate holding surface 11a and inclined downward from the substrate holding surface 11a. The tapered surface 11b has a conical trapezoid shape and has a larger diameter than the substrate holding surface 11a. The wafer W is first loaded on the tapered surface 11b by a conveying device not shown, and then moved toward the wafer W by the roller 11 to hold the peripheral edge of the wafer W on the substrate holding surface 11a. When the roller 11 releases the wafer W, as the roller 11 moves in the direction away from the wafer W, the peripheral edge of the wafer W separates from the substrate holding surface 11a and is supported by the tapered surface 11b (refer to the dashed line in FIG. 5) . A transport device not shown can take out the wafer W on the tapered surface 11b.

如圖1所示，在保持於基板保持部10之晶圓W的下方配置有在晶圓W之非元件面1供給沖洗液（例如純水，或是鹼性藥劑）的沖洗液供給噴嘴27。該沖洗液供給噴嘴27連接於無圖示之沖洗液供給源。沖洗液供給噴嘴27係朝向晶圓W之非元件面1的中心O1而配置。沖洗液從沖洗液供給噴嘴27供給至晶圓W的非元件面1，沖洗液藉由離心力在晶圓W之非元件面1上擴散。沖洗液在晶圓W之非元件面1上朝向半徑方向外側流動，藉此，可從晶圓W之非元件面1除去研磨屑。As shown in FIG. 1, under the wafer W held in the substrate holding portion 10, a rinse liquid supply nozzle 27 for supplying a rinse liquid (for example, pure water or an alkaline chemical) to the non-element surface 1 of the wafer W is arranged. . The rinse liquid supply nozzle 27 is connected to a rinse liquid supply source not shown. The rinse liquid supply nozzle 27 is arranged toward the center O1 of the non-element surface 1 of the wafer W. The rinsing liquid is supplied from the rinsing liquid supply nozzle 27 to the non-element surface 1 of the wafer W, and the rinsing liquid is diffused on the non-element surface 1 of the wafer W by centrifugal force. The rinsing liquid flows outward in the radial direction on the non-element surface 1 of the wafer W, whereby the polishing debris can be removed from the non-element surface 1 of the wafer W.

本實施形態係在保持於基板保持部10之晶圓W的上方配置有在晶圓W之元件面2上供給保護液（例如純水）的保護液供給噴嘴28。保護液供給噴嘴28連接於無圖示之保護液供給源。保護液供給噴嘴28朝向晶圓W之元件面2的中心配置。保護液從保護液供給噴嘴28供給至晶圓W之元件面2的中心，保護液藉由離心力而在晶圓W之元件面2上擴散。保護液係防止含有研磨晶圓W時產生之研磨屑及異物的沖洗液繞進晶圓W之元件面2而附著晶圓W的元件面2。結果，可將晶圓W之元件面2保持潔淨。In this embodiment, a protection liquid supply nozzle 28 for supplying a protection liquid (for example, pure water) on the element surface 2 of the wafer W is arranged above the wafer W held by the substrate holding portion 10. The protection liquid supply nozzle 28 is connected to a protection liquid supply source not shown. The protective liquid supply nozzle 28 is arranged toward the center of the element surface 2 of the wafer W. The protective liquid is supplied from the protective liquid supply nozzle 28 to the center of the element surface 2 of the wafer W, and the protective liquid is diffused on the element surface 2 of the wafer W by centrifugal force. The protective liquid prevents the washing liquid containing the polishing debris and foreign matter generated when polishing the wafer W from entering the element surface 2 of the wafer W and adhering to the element surface 2 of the wafer W. As a result, the device surface 2 of the wafer W can be kept clean.

如後述，晶圓W之非元件面1的研磨中，從非接觸式清洗機構30之清洗流體噴嘴33噴射清洗流體至晶圓W的元件面2。因而，依非元件面1之研磨方案，特別是晶圓W之旋轉速度，亦可省略保護液供給噴嘴28。As described later, during polishing of the non-element surface 1 of the wafer W, the cleaning fluid is sprayed from the cleaning fluid nozzle 33 of the non-contact cleaning mechanism 30 to the element surface 2 of the wafer W. Therefore, depending on the polishing scheme of the non-element surface 1, especially the rotation speed of the wafer W, the protection liquid supply nozzle 28 can also be omitted.

如圖1所示，平移旋轉運動機構60具備：馬達62、固定於馬達62之曲柄軸桿70、工作台69、底座71、及複數個偏心接頭65。馬達62配置於底座71之下側，並固定於底座71的下面。曲柄軸桿70貫穿底座71而延伸至上方。工作台69經由複數個偏心接頭65及曲柄軸桿70而連結於底座71。工作台69經由複數個軸承67而連結於複數個偏心接頭65，進一步經由軸承68而連結於曲柄軸桿70。底座71經由複數個軸承75而連接於複數個偏心接頭65。圖1僅描繪2個偏心接頭65，不過，平移旋轉運動機構60至少具備2個偏心接頭65。As shown in FIG. 1, the translational rotation movement mechanism 60 includes a motor 62, a crank shaft 70 fixed to the motor 62, a table 69, a base 71, and a plurality of eccentric joints 65. The motor 62 is arranged on the lower side of the base 71 and fixed to the lower surface of the base 71. The crank shaft 70 penetrates the base 71 and extends upward. The table 69 is connected to the base 71 via a plurality of eccentric joints 65 and crank shafts 70. The table 69 is connected to a plurality of eccentric joints 65 via a plurality of bearings 67, and is further connected to a crank shaft 70 via a bearing 68. The base 71 is connected to a plurality of eccentric joints 65 via a plurality of bearings 75. FIG. 1 only depicts two eccentric joints 65, but the translation and rotation movement mechanism 60 has at least two eccentric joints 65.

曲柄軸桿70之前端從馬達62之軸心偏心距離e程度。因而，當馬達62工作時，工作台69進行半徑e之圓形運動。本說明書中，將圓形運動定義為對象物在圓形軌道上移動的運動。由於工作台69藉由複數個偏心接頭65支撐，因此工作台69進行圓形運動時，工作台69本身不旋轉。複數個偏心接頭65之偏心量與工作台69的偏心量相同。此種工作台69之運動亦稱為平移旋轉運動。本說明書中，將對象物本身不旋轉，而對象物在圓形軌道上移動之運動定義為平移旋轉運動。研磨頭50及研磨帶供給機構41固定於工作台69。因而，當平移旋轉運動機構60工作時，研磨頭50及研磨帶供給機構41一體地（同步）進行平移旋轉運動。The front end of the crank shaft 70 is eccentric from the shaft center of the motor 62 by a distance e. Therefore, when the motor 62 is operating, the table 69 performs a circular movement of the radius e. In this specification, circular motion is defined as a motion in which an object moves on a circular orbit. Since the worktable 69 is supported by a plurality of eccentric joints 65, the worktable 69 itself does not rotate when the worktable 69 performs a circular movement. The eccentricity of the plurality of eccentric joints 65 is the same as the eccentricity of the table 69. Such movement of the table 69 is also referred to as translational and rotational movement. In this specification, the movement in which the object itself does not rotate but the object moves on a circular orbit is defined as translational rotation. The polishing head 50 and the polishing tape supply mechanism 41 are fixed to the table 69. Therefore, when the translation and rotation movement mechanism 60 is in operation, the polishing head 50 and the polishing tape supply mechanism 41 perform a translation and rotation movement integrally (synchronized).

本實施形態係使用表面具有研磨粒之研磨帶31作為用於研磨基板之非元件面1的研磨具。研磨帶31之一例如為具有基體材料帶、與覆蓋該基體材料帶之表面的研磨層之研磨帶。研磨層例如具有：研磨粒、與保持研磨粒之黏合劑（樹脂）。研磨帶31之其他例如為具有基體材料帶、研磨層、及位於此等之間的彈性層之研磨帶。彈性層例如由聚丙烯、聚氨酯、聚酯、或尼龍構成之不織布、或是矽橡膠等之彈性材料構成。In this embodiment, the polishing belt 31 having abrasive grains on the surface is used as an abrasive tool for polishing the non-element surface 1 of the substrate. One of the abrasive belts 31 is, for example, an abrasive belt having a base material belt and an abrasive layer covering the surface of the base material belt. The polishing layer has, for example, abrasive grains and a binder (resin) that holds the abrasive grains. Another example of the abrasive belt 31 is an abrasive belt having a base material belt, an abrasive layer, and an elastic layer between them. The elastic layer is made of, for example, a non-woven fabric made of polypropylene, polyurethane, polyester, or nylon, or an elastic material such as silicon rubber.

如圖1所示，研磨頭50配置於比基板保持面11a下方，且朝上配置。研磨頭50具備：對晶圓W之非元件面1按壓研磨帶31的研磨片55；將研磨片55推上上方之加壓機構52；及支撐加壓機構52之支撐構件79。支撐構件79固定於平移旋轉運動機構60的工作台69，整個研磨頭50可與工作台69一體地進行平移旋轉運動。支撐構件79具有無圖示之通孔，研磨帶31通過該通孔而延伸。As shown in FIG. 1, the polishing head 50 is arranged below the substrate holding surface 11a, and arranged upward. The polishing head 50 includes: a polishing sheet 55 that presses the polishing tape 31 on the non-element surface 1 of the wafer W; a pressure mechanism 52 that pushes the polishing sheet 55 upward; and a support member 79 that supports the pressure mechanism 52. The supporting member 79 is fixed to the worktable 69 of the translation and rotation movement mechanism 60, and the entire grinding head 50 can perform translation and rotation movement integrally with the worktable 69. The support member 79 has a through hole (not shown), and the polishing tape 31 extends through the through hole.

研磨帶供給機構41具備：供給研磨帶31之帶卷送卷軸43；及回收研磨帶31之帶卷收卷軸44。帶卷送卷軸43及帶卷收卷軸44分別連結於張力馬達43a、44a。此等張力馬達43a、44a固定於卷軸座42，藉由將指定之轉矩賦予帶卷送卷軸43及帶卷收卷軸44，可對研磨帶31施加指定之張力。卷軸座42固定於平移旋轉運動機構60之工作台69，整個研磨帶供給機構41可與工作台69一體地進行平移旋轉運動。The polishing tape supply mechanism 41 includes a tape winding reel 43 for supplying the polishing tape 31 and a tape winding reel 44 for recovering the polishing tape 31. The tape winding spool 43 and the tape winding spool 44 are respectively connected to the tension motors 43a and 44a. These tension motors 43a and 44a are fixed to the reel base 42 and can apply a specified tension to the polishing tape 31 by applying a specified torque to the tape winding reel 43 and the tape winding reel 44. The reel base 42 is fixed to the worktable 69 of the translational and rotational movement mechanism 60, and the entire abrasive tape supply mechanism 41 can perform translational and rotational movement integrally with the workbench 69.

在帶卷送卷軸43與帶卷收卷軸44之間設有將研磨帶31在其長度方向輸送的帶輸送裝置46。該帶輸送裝置46具備：輸送研磨帶31之帶輸送軋輥48；對帶輸送軋輥48按壓研磨帶31之夾持軋輥49；及使帶輸送軋輥48旋轉之帶輸送馬達47。研磨帶31夾在夾持軋輥49與帶輸送軋輥48之間。帶輸送馬達47使帶輸送軋輥48在圖1之箭頭指示的方向旋轉時，研磨帶31從帶卷送卷軸43經由研磨片55而輸送至帶卷收卷軸44。輸送研磨帶31之速度可藉由使帶輸送馬達47之旋轉速度變化而變更。一種實施形態係輸送研磨帶31之方向亦可為圖1之箭頭指示方向的相反方向（亦可替換帶卷送卷軸43與帶卷收卷軸44之配置）。此時，帶輸送裝置46亦設置於帶卷收卷軸44側。A belt conveying device 46 that conveys the abrasive belt 31 in the longitudinal direction is provided between the belt winding reel 43 and the belt winding reel 44. The belt conveying device 46 includes: a belt conveying roller 48 that conveys the grinding belt 31; a nip roller 49 that presses the grinding belt 31 against the belt conveying roller 48; and a belt conveying motor 47 that rotates the belt conveying roller 48. The grinding belt 31 is sandwiched between the nip roller 49 and the belt conveying roller 48. When the belt conveying motor 47 rotates the belt conveying roller 48 in the direction indicated by the arrow in FIG. 1, the abrasive belt 31 is conveyed from the belt winding reel 43 to the belt winding reel 44 via the grinding sheet 55. The speed of conveying the abrasive belt 31 can be changed by changing the rotation speed of the belt conveying motor 47. In one embodiment, the direction of conveying the abrasive belt 31 can also be the opposite direction of the direction indicated by the arrow in FIG. 1 (the arrangement of the belt winding reel 43 and the belt winding reel 44 can also be replaced). At this time, the belt conveying device 46 is also installed on the side of the belt winding shaft 44.

研磨帶31係以研磨帶31之研磨面31a朝向晶圓W的非元件面1之方式而供給至研磨片55的上面。本說明書中，研磨帶31之研磨面31a係位於研磨片55的上側，並定義為按壓於晶圓W之非元件面1的面。The polishing tape 31 is supplied to the upper surface of the polishing sheet 55 such that the polishing surface 31a of the polishing tape 31 faces the non-element surface 1 of the wafer W. In this specification, the polishing surface 31a of the polishing tape 31 is located on the upper side of the polishing sheet 55, and is defined as the surface that is pressed against the non-element surface 1 of the wafer W.

研磨裝置進一步具備支撐研磨帶31之複數個導輥53a、53b、53c、53d。研磨帶31藉由此等導輥53a、53b、53c、53d以包圍研磨片55及加壓機構52之方式引導。研磨頭50藉由研磨片55將研磨帶31從其背面按壓於晶圓W之非元件面1來研磨晶圓W的非元件面1。配置於研磨頭50之上部的導輥53b、53c引導研磨帶31，使研磨帶31在與晶圓W之非元件面1平行的方向行進。The polishing device further includes a plurality of guide rollers 53 a, 53 b, 53 c, and 53 d that support the polishing belt 31. The polishing belt 31 is guided so as to surround the polishing sheet 55 and the pressing mechanism 52 by the guide rollers 53a, 53b, 53c, and 53d. The polishing head 50 presses the polishing tape 31 on the non-element surface 1 of the wafer W from the back surface of the polishing sheet 55 to polish the non-element surface 1 of the wafer W. The guide rollers 53b and 53c arranged on the upper portion of the polishing head 50 guide the polishing tape 31 so that the polishing tape 31 travels in a direction parallel to the non-element surface 1 of the wafer W.

帶輸送裝置46及導輥53a、53b、53c、53d固定於無圖示之保持構件，該保持構件固定於平移旋轉運動機構60之工作台69。因此，當平移旋轉運動機構60動作時，研磨頭50、研磨帶供給機構41、帶輸送裝置46、及導輥53a、53b、53c、53d一體地（亦即同步）進行平移旋轉運動。The belt conveying device 46 and the guide rollers 53 a, 53 b, 53 c, and 53 d are fixed to a holding member (not shown), and the holding member is fixed to the table 69 of the translation and rotation mechanism 60. Therefore, when the translational rotation movement mechanism 60 operates, the polishing head 50, the polishing belt supply mechanism 41, the belt conveying device 46, and the guide rollers 53a, 53b, 53c, and 53d perform a translational rotation movement integrally (that is, synchronized).

圖6係顯示研磨頭50之配置一例的俯視圖，圖7係從圖6之箭頭B指示的方向觀看之圖。如圖6所示，研磨頭50係以研磨片55之一部分從晶圓W的周緣部擠出於外側的方式配置。亦即，從基板保持部10之軸心CP至研磨片55的最外端之距離d1，比軋輥11保持晶圓W時從軸心CP至各軋輥11之基板保持面11a的距離d2長。本實施形態之研磨片55比晶圓W的半徑長，研磨片55之上緣具有帶圓角的剖面形狀。更具體而言，研磨片55之一端從晶圓W的周緣部擠出於外側，另一端越過晶圓W之非元件面1的中心O1（亦即基板保持部10之軸心CP）而延伸。藉此，研磨片55可使研磨帶31從晶圓W之非元件面1的中心O1接觸至最外部。研磨片55可由PEEK（聚醚醚酮）等之樹脂材料構成。一種實施形態係研磨片55亦可比晶圓W之直徑長。FIG. 6 is a plan view showing an example of the arrangement of the polishing head 50, and FIG. 7 is a view viewed from the direction indicated by the arrow B in FIG. 6. As shown in FIG. 6, the polishing head 50 is arranged such that a part of the polishing sheet 55 is extruded from the peripheral edge of the wafer W to the outside. That is, the distance d1 from the axis CP of the substrate holding portion 10 to the outermost end of the polishing sheet 55 is longer than the distance d2 from the axis CP to the substrate holding surface 11a of each roller 11 when the roller 11 holds the wafer W. The polishing sheet 55 of this embodiment is longer than the radius of the wafer W, and the upper edge of the polishing sheet 55 has a rounded cross-sectional shape. More specifically, one end of the polishing sheet 55 is extruded from the peripheral edge of the wafer W to the outside, and the other end extends beyond the center O1 of the non-element surface 1 of the wafer W (that is, the axis CP of the substrate holding portion 10) . Thereby, the polishing sheet 55 can contact the polishing tape 31 from the center O1 of the non-element surface 1 of the wafer W to the outermost portion. The polishing sheet 55 may be made of a resin material such as PEEK (polyether ether ketone). In one embodiment, the polishing sheet 55 may be longer than the diameter of the wafer W.

晶圓W研磨中，晶圓W藉由軋輥11而旋轉。全部軋輥11係以各軸心為中心而旋轉，不過，此等軋輥11之位置固定。因此，即使研磨片55之一部分從晶圓W的周緣部擠出，軋輥11仍不致接觸研磨片55。晶圓W研磨中，包含研磨片55之研磨頭50藉由平移旋轉運動機構60而平移旋轉運動。研磨頭50藉由該平移旋轉運動而對晶圓W進行相對運動，確保在研磨帶31與晶圓W之非元件面1的接觸點（以下，稱為研磨點）之研磨帶31與晶圓W的相對速度。特別是平移旋轉運動機構60在晶圓W之中心部可增大晶圓W與研磨帶31之相對速度。研磨頭50於平移旋轉運動時，係配置於不接觸軋輥11之位置。結果，研磨帶31可研磨包含最外部之晶圓W的整個非元件面1。During the polishing of the wafer W, the wafer W is rotated by the roller 11. All the rolls 11 are rotated around each axis, but the positions of these rolls 11 are fixed. Therefore, even if a part of the polishing sheet 55 is extruded from the peripheral edge of the wafer W, the roll 11 does not contact the polishing sheet 55. During the polishing of the wafer W, the polishing head 50 including the polishing sheet 55 is translated and rotated by the translation and rotation mechanism 60. The polishing head 50 moves the wafer W relative to the wafer W by the translational and rotational movement, ensuring that the polishing tape 31 and the wafer are at the contact point (hereinafter referred to as the polishing point) between the polishing tape 31 and the non-element surface 1 of the wafer W. The relative speed of W. In particular, the translation and rotation mechanism 60 at the center of the wafer W can increase the relative speed of the wafer W and the polishing belt 31. The grinding head 50 is arranged in a position where it does not touch the roll 11 when it is moving in translation and rotation. As a result, the polishing belt 31 can polish the entire non-element surface 1 including the outermost wafer W.

如圖6所示，研磨片55對研磨帶31之行進方向（以箭頭C表示）傾斜延伸。本實施形態之研磨帶31的行進方向C與研磨帶31的長度方向一致。再者，研磨片55係在不致從研磨帶31擠出範圍內，而在包含研磨帶31之全寬延伸。藉由將研磨片55對研磨帶31之行進方向C（研磨帶31之長度方向）傾斜，即使是研磨帶31之行進方向的下游側（本實施形態之情況係晶圓W的外周側）仍可使未使用之研磨帶31接觸晶圓W。結果，可防止因為使用研磨過而惡化之研磨帶31造成研磨率降低。As shown in FIG. 6, the polishing sheet 55 extends obliquely to the traveling direction (indicated by arrow C) of the polishing belt 31. The traveling direction C of the polishing belt 31 of the present embodiment coincides with the longitudinal direction of the polishing belt 31. Furthermore, the polishing sheet 55 is within a range that will not be extruded from the polishing belt 31 and extends over the full width including the polishing belt 31. By inclining the polishing sheet 55 with respect to the traveling direction C of the polishing tape 31 (the longitudinal direction of the polishing tape 31), even the downstream side of the traveling direction of the polishing tape 31 (in this embodiment is the outer peripheral side of the wafer W) The unused polishing tape 31 can be brought into contact with the wafer W. As a result, it is possible to prevent a decrease in the polishing rate due to the use of the abrasive belt 31 that has been polished and deteriorated.

如圖7所示，研磨片55設於保持墊56之表面，並向上方突起。保持墊56固定於背面板57之表面。加壓機構52配置於背面板57的下方，並連結於背面板57之下面。加壓機構52係構成可使研磨片55、保持墊56、及背面板57一體地上昇及下降。晶圓W研磨中，加壓機構52將研磨片55、保持墊56、及背面板57推上上方，並可以研磨片55之上緣將研磨帶31按壓於晶圓W的非元件面1來研磨。研磨片55因為其上緣具有帶圓角的剖面形狀，所以可減少研磨帶31與研磨片55之接觸阻力。在等待研磨狀態（尚未進行研磨之狀態）下，加壓機構52使研磨片55、保持墊56、及背面板57下降，並使研磨帶31從晶圓W之非元件面1離開。As shown in FIG. 7, the polishing sheet 55 is provided on the surface of the holding pad 56, and protrudes upward. The holding pad 56 is fixed on the surface of the back plate 57. The pressing mechanism 52 is arranged under the back plate 57 and connected to the underside of the back plate 57. The pressing mechanism 52 is configured to allow the polishing sheet 55, the holding pad 56, and the back plate 57 to be raised and lowered integrally. During the polishing of the wafer W, the pressing mechanism 52 pushes the polishing sheet 55, the holding pad 56, and the back plate 57 upward, and can press the polishing tape 31 on the non-element surface 1 of the wafer W by the upper edge of the polishing sheet 55 Grind. Since the upper edge of the polishing sheet 55 has a rounded cross-sectional shape, the contact resistance between the polishing tape 31 and the polishing sheet 55 can be reduced. In the state of waiting for polishing (a state where polishing has not been performed), the pressing mechanism 52 lowers the polishing sheet 55, the holding pad 56, and the back plate 57, and separates the polishing tape 31 from the non-element surface 1 of the wafer W.

本實施形態之加壓機構52係由空氣汽缸構成。由空氣汽缸構成之加壓機構52具備：連結於背面板57之活塞桿52a；藉由供給氣體而壓入活塞桿52a之第一壓力室52b；及藉由供給氣體而推上活塞桿52a之第二壓力室52c。供給至第一壓力室52b及第二壓力室52c之氣體壓力藉由無圖示之壓力調節器來控制。壓力調節器之一例如為電－氣調壓閥。藉由壓力調節器可獲得對研磨帶31之一定的按壓力。The pressurizing mechanism 52 of this embodiment is composed of an air cylinder. The pressurizing mechanism 52 consisting of an air cylinder is provided with: a piston rod 52a connected to the back plate 57; a first pressure chamber 52b that is pressed into the piston rod 52a by supplying gas; and a first pressure chamber 52b that is pushed up by the supply of gas The second pressure chamber 52c. The pressure of the gas supplied to the first pressure chamber 52b and the second pressure chamber 52c is controlled by a pressure regulator (not shown). One of the pressure regulators is, for example, an electric-pneumatic pressure regulator. A certain pressing force on the polishing belt 31 can be obtained by the pressure regulator.

一種實施形態係研磨具亦可係磨石等之固定研磨粒來取代研磨帶31。此時，固定研磨粒亦可固定於背面板57之表面，亦可固定於研磨片55的表面。研磨頭50可使固定研磨粒接觸晶圓W之非元件面1來研磨晶圓W的非元件面1。In one embodiment, the abrasive tool may be a fixed abrasive grain such as a grindstone to replace the abrasive belt 31. At this time, the fixed abrasive grains may also be fixed on the surface of the back plate 57 or on the surface of the polishing sheet 55. The polishing head 50 can make the fixed abrasive particles contact the non-element surface 1 of the wafer W to polish the non-element surface 1 of the wafer W.

再者，一種實施形態係固定研磨粒亦可環狀地固定於背面板57之表面。此時，研磨頭50具備無圖示之旋轉機構，旋轉機構連結於背面板57，固定研磨粒及背面板57構成可藉由旋轉機構而旋轉。研磨頭50可使固定研磨粒旋轉，而且接觸晶圓W之非元件面1來研磨晶圓W的非元件面1。Furthermore, in one embodiment, the fixed abrasive grains may also be fixed to the surface of the back plate 57 in a ring shape. At this time, the polishing head 50 includes a rotating mechanism not shown in the figure, and the rotating mechanism is connected to the back plate 57, and the fixed abrasive grains and the back plate 57 are configured to be rotatable by the rotating mechanism. The polishing head 50 can rotate the fixed abrasive grains and contact the non-element surface 1 of the wafer W to polish the non-element surface 1 of the wafer W.

只要可研磨晶圓W之非元件面1，研磨頭50之構成不拘，而不限定於上述之實施形態。例如，研磨頭50之加壓機構52亦可係可上下移動研磨片55之氣囊。此時，在氣囊中供給氣體（例如，空氣）時，當氣囊膨脹可將研磨片55按壓於晶圓W之非元件面1。從氣囊中排出氣體時，研磨片55從非元件面1離開。As long as the non-element surface 1 of the wafer W can be polished, the configuration of the polishing head 50 is not limited and is not limited to the above-mentioned embodiment. For example, the pressurizing mechanism 52 of the polishing head 50 may also be an air bag capable of moving the polishing sheet 55 up and down. At this time, when gas (for example, air) is supplied in the airbag, the polishing sheet 55 can be pressed against the non-element surface 1 of the wafer W when the airbag is inflated. When the gas is discharged from the airbag, the polishing sheet 55 separates from the non-element surface 1.

或是，研磨頭50亦可具有：複數個研磨片；及經由各研磨片將研磨具（例如研磨帶）按壓於晶圓W之非元件面1的複數個加壓機構。此時，複數個研磨片亦可直線狀並列配置，亦可在晶圓W之周方向彼此離開配置。複數個研磨片中，係配置成配置於晶圓W之周緣部的研磨片之一端從晶圓W之周緣部擠出外側，配置於晶圓W之中心部的研磨片之一部分於晶圓W旋轉1圈時與晶圓W之非元件面1的中心O1重疊。Or, the polishing head 50 may also have: a plurality of polishing sheets; and a plurality of pressing mechanisms for pressing the polishing tool (for example, a polishing belt) on the non-element surface 1 of the wafer W via each of the polishing sheets. At this time, a plurality of polishing sheets may be arranged linearly in parallel, or may be arranged apart from each other in the circumferential direction of the wafer W. Among the plurality of polishing sheets, one end of the polishing sheet arranged on the periphery of the wafer W is extruded from the periphery of the wafer W, and a part of the polishing sheet arranged on the center of the wafer W is on the wafer W. When it rotates once, it overlaps with the center O1 of the non-element surface 1 of the wafer W.

再者，只要可研磨晶圓W之非元件面1，基板保持部10之構成不拘。基板保持部10亦可藉由保持基板之周緣部的第一保持部、及保持基板之中央部的第二保持部之組合而構成，不過無圖示。此時，晶圓W之研磨係組合以下兩個研磨工序來進行：以第一研磨具研磨在第一保持部上保持其周緣部之晶圓W的中央部之第一研磨工序；及以第二研磨具研磨在第二保持部上保持其中央部之晶圓W的周緣部之第二研磨工序。第二研磨具亦可係與第一研磨具相同之研磨具，亦可係不同之研磨具。再者，亦可在第一研磨工序之後進行第二研磨工序，亦可在第二研磨工序之後進行第一研磨工序。Furthermore, as long as the non-element surface 1 of the wafer W can be polished, the structure of the substrate holding portion 10 is not limited. The substrate holding portion 10 may also be constituted by a combination of a first holding portion holding the peripheral portion of the substrate and a second holding portion holding the central portion of the substrate, but it is not shown. At this time, the polishing of the wafer W is performed by combining the following two polishing steps: the first polishing step of polishing the center portion of the wafer W holding the peripheral portion on the first holding portion with the first abrasive tool; and The second polishing step in which the two abrasive tools polish the peripheral edge portion of the wafer W held at the center portion on the second holding portion. The second grinding tool can also be the same grinding tool as the first grinding tool, or a different grinding tool. Furthermore, the second polishing step may be performed after the first polishing step, or the first polishing step may be performed after the second polishing step.

將研磨具（圖1所示之研磨裝置係研磨帶31）按壓於晶圓W之非元件面1來研磨該非元件面1時，晶圓W之研磨屑、及含有該研磨屑之沖洗液等異物可能會繞進晶圓W的元件面2而污染該元件面2。因而，圖1所示之研磨裝置具備在晶圓（基板）W之非元件面1的研磨中，清洗元件面2之非接觸式清洗機構30。非接觸式清洗機構30係不具直接接觸晶圓W之元件面2的清洗構件（例如，清洗刷或清洗海綿）之清洗機構。When pressing the polishing tool (the polishing belt 31 of the polishing device shown in FIG. 1) on the non-element surface 1 of the wafer W to polish the non-element surface 1, the polishing debris of the wafer W and the rinse liquid containing the polishing debris, etc. Foreign matter may enter the device surface 2 of the wafer W and contaminate the device surface 2. Therefore, the polishing apparatus shown in FIG. 1 includes a non-contact cleaning mechanism 30 for cleaning the element surface 2 during polishing of the non-element surface 1 of the wafer (substrate) W. The non-contact cleaning mechanism 30 is a cleaning mechanism that does not have a cleaning member (for example, a cleaning brush or a cleaning sponge) that directly contacts the component surface 2 of the wafer W.

圖8係顯示非接觸式清洗機構之一例的模式圖。如圖8所示，本實施形態之非接觸式清洗機構30具備：將清洗流體噴射於晶圓W之元件面2的清洗流體噴嘴33；及使清洗流體噴嘴33在晶圓W之上方移動的噴嘴移動機構32。噴嘴移動機構32具備：支撐清洗流體噴嘴33之噴嘴支臂34；使噴嘴支臂34回轉之噴嘴回轉軸35；及使噴嘴回轉軸35旋轉之馬達（驅動源）36。馬達36電性連接於動作控制部180，並依據來自動作控制部180之指令使噴嘴回轉軸35在其軸心周圍旋轉。Fig. 8 is a schematic diagram showing an example of a non-contact cleaning mechanism. As shown in FIG. 8, the non-contact cleaning mechanism 30 of this embodiment includes: a cleaning fluid nozzle 33 that sprays cleaning fluid on the element surface 2 of the wafer W; and a cleaning fluid nozzle 33 that moves the cleaning fluid nozzle 33 above the wafer W Nozzle moving mechanism 32. The nozzle moving mechanism 32 includes: a nozzle arm 34 that supports the cleaning fluid nozzle 33; a nozzle rotating shaft 35 that rotates the nozzle arm 34; and a motor (drive source) 36 that rotates the nozzle rotating shaft 35. The motor 36 is electrically connected to the motion control unit 180, and rotates the nozzle rotating shaft 35 around its axis according to instructions from the motion control unit 180.

清洗流體噴嘴33具有連結於噴嘴支臂34之一端，並朝向下方之前端。本實施形態之非接觸式清洗機構30係具有清洗流體供給裝置40，清洗流體經由從清洗流體供給裝置40延伸之清洗流體管線37而供給至該清洗流體噴嘴33。清洗流體噴嘴33係以從其前端將清洗流體噴射於晶圓W之元件面2，來清洗該元件面2之方式構成。在噴嘴支臂34之另一端連結有噴嘴回轉軸35，噴嘴回轉軸35藉由馬達36之動作而旋轉時，清洗流體噴嘴33在晶圓W之元件面2的上方水平方向移動。The cleaning fluid nozzle 33 has one end connected to the nozzle arm 34 and faces the lower front end. The non-contact cleaning mechanism 30 of this embodiment has a cleaning fluid supply device 40, and the cleaning fluid is supplied to the cleaning fluid nozzle 33 via a cleaning fluid line 37 extending from the cleaning fluid supply device 40. The cleaning fluid nozzle 33 is configured to spray cleaning fluid on the element surface 2 of the wafer W from the tip thereof to clean the element surface 2. A nozzle rotating shaft 35 is connected to the other end of the nozzle arm 34. When the nozzle rotating shaft 35 is rotated by the operation of the motor 36, the cleaning fluid nozzle 33 moves in the horizontal direction above the element surface 2 of the wafer W.

圖9係顯示清洗流體噴嘴33在晶圓W之上方移動的情形之模式圖。如圖9所示，清洗流體噴嘴33藉由噴嘴移動機構32而在晶圓W之上方從元件面2的概略中央部水平方向移動至周緣部。當清洗流體噴嘴33在晶圓W之元件面2的中央部時，從該清洗流體噴嘴33噴射之清洗流體衝撞至少包含元件面2之中心O2的區域。藉由使清洗流體噴嘴33從元件面2之概略中央部移動至周緣部，而清洗流體衝撞整個元件面2，藉由該清洗流體來清洗整個元件面2。亦可使噴射清洗流體之清洗流體噴嘴33在元件面2之概略中央部與周緣部之間往返1次以上。FIG. 9 is a schematic diagram showing a situation in which the cleaning fluid nozzle 33 moves above the wafer W. As shown in FIG. As shown in FIG. 9, the cleaning fluid nozzle 33 is moved above the wafer W by the nozzle moving mechanism 32 from the roughly central part of the element surface 2 to the peripheral part in the horizontal direction. When the cleaning fluid nozzle 33 is at the center of the element surface 2 of the wafer W, the cleaning fluid sprayed from the cleaning fluid nozzle 33 collides with an area including at least the center O2 of the element surface 2. By moving the cleaning fluid nozzle 33 from the approximate center of the element surface 2 to the peripheral edge portion, the cleaning fluid collides with the entire element surface 2 and the entire element surface 2 is cleaned by the cleaning fluid. The cleaning fluid nozzle 33 that sprays the cleaning fluid may be reciprocated between the roughly central portion and the peripheral edge of the element surface 2 more than once.

亦可藉由使清洗流體噴嘴33在晶圓W之半徑方向進退的空氣汽缸機構而構成噴嘴移動機構32。或是，亦可藉由使清洗流體噴嘴33在晶圓W之半徑方向進退的滾珠螺桿機構而構成噴嘴移動機構32，不過無圖示。The nozzle moving mechanism 32 may also be constituted by an air cylinder mechanism that advances and retracts the cleaning fluid nozzle 33 in the radial direction of the wafer W. Alternatively, the nozzle moving mechanism 32 may be constituted by a ball screw mechanism that advances and retracts the cleaning fluid nozzle 33 in the radial direction of the wafer W, but it is not shown.

清洗流體供給裝置40係用於在指定時間將指定之清洗流體供給至晶圓W之元件面2的裝置。清洗流體供給裝置40亦可配置於研磨裝置之內部，亦可配置於研磨裝置的外部。清洗流體供給裝置40電性連接有動作控制部180，並藉由動作控制部180來控制清洗流體供給裝置40之動作。例如，動作控制部180控制內建於清洗流體供給裝置40之質量流控制器等的流量調整器（無圖示），來控制從清洗流體供給裝置40供給至清洗流體噴嘴33之清洗流體的流量與供給時間。如圖8所示，亦可在清洗流體管線37中配置質量流控制器等之流量調整器38。藉由動作控制部180控制流量調整器38之動作，來調整從清洗流體供給裝置40供給之清洗流體的流量、及供給時間。The cleaning fluid supply device 40 is a device for supplying a specified cleaning fluid to the component surface 2 of the wafer W at a specified time. The cleaning fluid supply device 40 may also be arranged inside the polishing device or outside the polishing device. The cleaning fluid supply device 40 is electrically connected with an action control part 180, and the action of the cleaning fluid supply device 40 is controlled by the action control part 180. For example, the action control unit 180 controls a flow regulator (not shown) such as a mass flow controller built in the cleaning fluid supply device 40 to control the flow rate of the cleaning fluid supplied from the cleaning fluid supply device 40 to the cleaning fluid nozzle 33 And supply time. As shown in FIG. 8, a flow regulator 38 such as a mass flow controller can also be arranged in the cleaning fluid line 37. The operation control unit 180 controls the operation of the flow regulator 38 to adjust the flow rate and supply time of the cleaning fluid supplied from the cleaning fluid supply device 40.

圖10A至圖10C分別係顯示清洗流體之供給時間例的曲線圖。圖10A至圖10C中，縱軸表示研磨頭之動作狀態、與非接觸式清洗機構30之動作狀態，橫軸表示時間。圖10A至圖10C中，當研磨頭50之動作狀態變成on狀態時，研磨帶（研磨具）31按壓於晶圓（基板）W之非元件面1，開始研磨該非元件面1。當研磨頭50之動作狀態變成off狀態時，研磨帶31從晶圓W之非元件面1離開，停止研磨非元件面1。當非接觸式清洗機構30之動作狀態變成on狀態時，從清洗流體噴嘴33噴射清洗流體至晶圓W之元件面2，開始清洗該元件面2。當非接觸式清洗機構30之動作狀態變成off狀態時，停止從清洗流體噴嘴33噴射清洗流體，而停止清洗元件面2。10A to 10C are graphs showing examples of the supply time of the cleaning fluid, respectively. In FIGS. 10A to 10C, the vertical axis represents the operating state of the polishing head and the operating state of the non-contact cleaning mechanism 30, and the horizontal axis represents time. In FIGS. 10A to 10C, when the operation state of the polishing head 50 is changed to the on state, the polishing tape (abrasive tool) 31 is pressed against the non-element surface 1 of the wafer (substrate) W to start polishing the non-element surface 1. When the operation state of the polishing head 50 becomes the off state, the polishing tape 31 separates from the non-element surface 1 of the wafer W, and the polishing of the non-element surface 1 is stopped. When the operating state of the non-contact cleaning mechanism 30 becomes the on state, the cleaning fluid is sprayed from the cleaning fluid nozzle 33 to the element surface 2 of the wafer W, and the element surface 2 is cleaned. When the operating state of the non-contact cleaning mechanism 30 becomes the off state, the spraying of the cleaning fluid from the cleaning fluid nozzle 33 is stopped, and the cleaning of the element surface 2 is stopped.

圖10A所示之例係開始清洗元件面2之時刻Tc，比開始藉由研磨帶31研磨晶圓W之非元件面1的時刻Ta早。亦即，非接觸式清洗機構30清洗元件面2係比藉由研磨帶31研磨晶圓W之非元件面1早開始。再者，圖10A所示之例係清洗元件面2結束之時刻Td，比藉由研磨帶31研磨晶圓W之非元件面1結束的時刻Tb晚。亦即，非接觸式清洗機構30清洗元件面2係在藉由研磨帶31研磨晶圓W的非元件面1結束之後結束。In the example shown in FIG. 10A, the time Tc at which the cleaning of the element surface 2 starts is earlier than the time Ta at which the polishing of the non-element surface 1 of the wafer W by the polishing belt 31 is started. That is, the non-contact cleaning mechanism 30 cleans the component surface 2 earlier than the polishing of the non-component surface 1 of the wafer W by the polishing belt 31. Furthermore, in the example shown in FIG. 10A, the time Td at which the cleaning of the element surface 2 ends is later than the time Tb at which the polishing of the non-element surface 1 of the wafer W by the polishing belt 31 ends. That is, the cleaning of the component surface 2 by the non-contact cleaning mechanism 30 is completed after the polishing of the non-component surface 1 of the wafer W by the polishing belt 31 is completed.

圖10B所示之例係開始清洗元件面2的時刻Tc，與開始藉由研磨帶31研磨晶圓W之非元件面1的時刻Ta相同。亦即，非接觸式清洗機構30清洗元件面2係與藉由研磨帶31研磨晶圓W之非元件面1同時開始。再者，圖10B所示之例係清洗元件面2結束之時刻Td，與藉由研磨帶31研磨晶圓W之非元件面1結束的時刻Tb相同。亦即，非接觸式清洗機構30清洗元件面2係與藉由研磨帶31研磨晶圓W之非元件面1結束的同時結束。In the example shown in FIG. 10B, the time Tc at which the cleaning of the element surface 2 is started is the same as the time Ta at which the polishing of the non-element surface 1 of the wafer W by the polishing belt 31 is started. That is, the cleaning of the component surface 2 by the non-contact cleaning mechanism 30 starts at the same time as the polishing of the non-component surface 1 of the wafer W by the polishing belt 31. Furthermore, in the example shown in FIG. 10B, the time Td when the cleaning of the element surface 2 ends is the same as the time Tb when the polishing of the non-element surface 1 of the wafer W by the polishing belt 31 ends. That is, the cleaning of the component surface 2 by the non-contact cleaning mechanism 30 is completed at the same time as the polishing of the non-component surface 1 of the wafer W by the polishing belt 31 is completed.

如圖10A及圖10B所示，至少在藉由研磨帶31研磨晶圓W之非元件面1中，藉由清洗元件面2，可最大限度防止異物污染元件面2。As shown in FIGS. 10A and 10B, at least in the non-element surface 1 of the wafer W that is polished by the polishing belt 31, by cleaning the element surface 2, the contamination of the element surface 2 by foreign matter can be prevented to the greatest extent.

另外，圖10C所示之例係開始清洗元件面2之時刻Tc，係在開始藉由研磨帶31研磨晶圓W之非元件面1起經過指定時間Int之後開始。亦即，非接觸式清洗機構30清洗元件面2係在藉由研磨帶31研磨晶圓W的非元件面1之後開始。此時，由於降低清洗流體之消耗量，因此可降低研磨裝置之營運成本。再者，圖10C所示之例係清洗元件面2結束之時間Td，比藉由研磨帶31研磨晶圓W之非元件面1結束的時刻Tb晚。一種實施形態係亦可將清洗元件面2結束之時刻Td設定為與藉由研磨帶31研磨晶圓W之非元件面1結束的時刻Tb相同。因此，至少宜在藉由研磨帶31研磨晶圓W之非元件面1結束的時刻Tb之前清洗元件面2。In the example shown in FIG. 10C, the time Tc at which the cleaning of the element surface 2 starts is started after the specified time Int has elapsed since the polishing of the non-element surface 1 of the wafer W by the polishing belt 31 is started. That is, the non-contact cleaning mechanism 30 cleans the component surface 2 after the non-component surface 1 of the wafer W is polished by the polishing belt 31. At this time, since the consumption of cleaning fluid is reduced, the operating cost of the polishing device can be reduced. Furthermore, in the example shown in FIG. 10C, the time Td at which the cleaning of the element surface 2 ends is later than the time Tb at which the polishing of the non-element surface 1 of the wafer W by the polishing belt 31 ends. In one embodiment, the time Td at which the cleaning of the element surface 2 ends may be set to be the same as the time Tb at which the polishing of the non-element surface 1 of the wafer W by the polishing belt 31 ends. Therefore, it is preferable to clean the element surface 2 at least before the time Tb when the polishing of the non-element surface 1 of the wafer W by the polishing tape 31 is completed.

本實施形態之清洗流體噴嘴33係將雙流體噴流朝向元件面2噴射之雙流體噴流噴嘴。雙流體噴流噴嘴係可以高速噴射從清洗流體供給裝置40供給之氣體與液體的混合流體而構成之噴嘴。雙流體噴流噴嘴之清洗流體噴嘴33例如使乘著高速氣體之微小液滴（噴霧）衝撞晶圓W的元件面2，利用該衝撞所發生之衝擊波除去元件面2上的異物，亦即清洗元件面2。The cleaning fluid nozzle 33 of this embodiment is a two-fluid jet nozzle that sprays a two-fluid jet toward the element surface 2. The two-fluid jet nozzle is a nozzle that can jet a mixed fluid of gas and liquid supplied from the cleaning fluid supply device 40 at a high speed. The cleaning fluid nozzle 33 of the two-fluid jet nozzle, for example, makes small droplets (spray) of high-speed gas collide with the element surface 2 of the wafer W, and the shock wave generated by the collision is used to remove foreign matter on the element surface 2, that is, to clean the element Surface 2.

從清洗流體噴嘴33噴射至晶圓W之元件面2的清洗流體不限定於雙流體噴流。例如，亦可係純水（或是超純水）中溶解臭氧氣體之臭氧水，亦可係使純水（或是超純水）中含有臭氧氣體之微小氣泡的臭氧微氣泡水（或是，臭氧奈米氣泡水）。此等情況下，非接觸式清洗機構30之清洗流體供給裝置40具備製造臭氧氣體之臭氧產生器85。The cleaning fluid sprayed from the cleaning fluid nozzle 33 to the element surface 2 of the wafer W is not limited to a two-fluid jet. For example, it can also be ozone water in which ozone gas is dissolved in pure water (or ultrapure water), or it can be ozone and microbubble water (or ultrapure water) containing ozone gas bubbles in pure water (or ultrapure water). , Ozone nanobubble water). In this case, the cleaning fluid supply device 40 of the non-contact cleaning mechanism 30 includes an ozone generator 85 for producing ozone gas.

清洗流體係臭氧水時，藉由臭氧具有之強力氧化作用使附著於晶圓W之元件面2的有機物及金屬溶解於臭氧水，而從元件面2除去。清洗流體係臭氧微氣泡水（或是，臭氧奈米氣泡水）時，係利用臭氧微氣泡消滅時產生之大量氫氧自由基分解、除去異物。When cleaning the flow system ozone water, the organic matter and metal adhering to the device surface 2 of the wafer W are dissolved in the ozone water and removed from the device surface 2 by the strong oxidizing effect of ozone. When cleaning the flow system ozone microbubble water (or ozone nanobubble water), the large amount of hydroxyl radicals generated when the ozone microbubbles are eliminated is used to decompose and remove foreign matter.

一種實施形態之清洗流體亦可係電解水。此時，非接觸式清洗機構30之清洗流體供給裝置40具有電解水產生機86。藉由電解水產生機86所產生之電解水供給至清洗流體噴嘴33，並從該清洗流體噴嘴33噴射至元件面2。再者，從清洗流體噴嘴33噴射至晶圓W之元件面2的清洗流體亦可係藉由超音波振動而激發之超音波水，亦可係可溶解異物之藥劑。再者，一種實施形態係從清洗流體噴嘴33噴射至晶圓W之元件面2的清洗流體亦可係與元件面2上之異物反應，而從元件面除去該異物之清洗氣體。The cleaning fluid of one embodiment may also be electrolyzed water. At this time, the cleaning fluid supply device 40 of the non-contact cleaning mechanism 30 has an electrolytic water generator 86. The electrolyzed water generated by the electrolyzed water generator 86 is supplied to the cleaning fluid nozzle 33 and sprayed from the cleaning fluid nozzle 33 to the element surface 2. Furthermore, the cleaning fluid sprayed from the cleaning fluid nozzle 33 to the element surface 2 of the wafer W may also be ultrasonic water excited by ultrasonic vibration, or may be a chemical that can dissolve foreign matter. Furthermore, in one embodiment, the cleaning fluid sprayed from the cleaning fluid nozzle 33 to the element surface 2 of the wafer W may also react with foreign matter on the element surface 2 to remove the foreign matter from the element surface.

其次，說明本實施形態之研磨裝置的動作。以下說明之研磨裝置的動作，亦即晶圓W之研磨處理，係藉由圖1所示之動作控制部180來控制。動作控制部180電性連接於基板保持部10、非接觸式清洗機構30、研磨頭50、研磨帶供給機構41、帶輸送裝置46、及平移旋轉運動機構60等，來控制此等元件之動作。例如，動作控制部180控制基板保持部10、沖洗液供給噴嘴27、保護液供給噴嘴28、馬達36、流量調整器38、清洗流體供給裝置40、研磨頭50、研磨帶供給機構41、帶輸送裝置46、平移旋轉運動機構60、臭氧產生器85（或是電解水產生機86）之動作。動作控制部180由專用電腦或通用電腦構成。Next, the operation of the polishing apparatus of this embodiment will be described. The operation of the polishing device described below, that is, the polishing process of the wafer W, is controlled by the operation control unit 180 shown in FIG. 1. The motion control part 180 is electrically connected to the substrate holding part 10, the non-contact cleaning mechanism 30, the polishing head 50, the polishing tape supply mechanism 41, the tape conveying device 46, and the translation and rotation motion mechanism 60 to control the motion of these components. . For example, the operation control unit 180 controls the substrate holding unit 10, the rinse liquid supply nozzle 27, the protection liquid supply nozzle 28, the motor 36, the flow regulator 38, the cleaning fluid supply device 40, the polishing head 50, the polishing belt supply mechanism 41, and the belt transport The actions of the device 46, the translational rotation movement mechanism 60, and the ozone generator 85 (or the electrolysis water generator 86). The action control unit 180 is composed of a dedicated computer or a general-purpose computer.

研磨之晶圓W在非元件面1朝下之狀態（亦即，元件面2朝上之狀態）下，藉由基板保持部10之軋輥11保持，進一步以晶圓W之軸心為中心而旋轉。具體而言，基板保持部10在晶圓W之非元件面1朝下的狀態下使複數個軋輥11接觸晶圓W之周緣部，並藉由使複數個軋輥11以各個軸心為中心而旋轉，而使晶圓W旋轉。其次，從沖洗液供給噴嘴27供給沖洗液至晶圓W之非元件面1，並從保護液供給噴嘴28供給保護液至晶圓W之元件面2。沖洗液在晶圓W之非元件面1上流至半徑方向外側，保護液則藉由離心力擴散至整個晶圓W之元件面2。The polished wafer W is held by the roller 11 of the substrate holding portion 10 in the state where the non-element surface 1 faces downward (that is, the element surface 2 faces upward), and is further centered on the axis of the wafer W Spin. Specifically, the substrate holding portion 10 causes the plurality of rollers 11 to contact the peripheral portion of the wafer W with the non-element surface 1 of the wafer W facing down, and the plurality of rollers 11 are centered on each axis. Rotate, and the wafer W is rotated. Next, the rinse liquid is supplied from the rinse liquid supply nozzle 27 to the non-element surface 1 of the wafer W, and the protection liquid is supplied from the protection liquid supply nozzle 28 to the element surface 2 of the wafer W. The rinsing liquid flows on the non-element surface 1 of the wafer W to the outside in the radial direction, and the protection liquid is diffused to the entire element surface 2 of the wafer W by centrifugal force.

再者，如參照圖10A之說明，在開始研磨晶圓W的非元件面1之前，開始藉由非接觸式清洗機構30清洗晶圓W之元件面2。更具體而言，從非接觸式清洗機構30之清洗流體供給裝置40供給清洗流體至清洗流體噴嘴33，並從該清洗流體噴嘴33噴射清洗流體至晶圓W之元件面2。同時，藉由非接觸式清洗機構30之噴嘴移動機構32使清洗流體噴嘴33在晶圓W之上方水平方向移動。Furthermore, as described with reference to FIG. 10A, before starting to polish the non-component surface 1 of the wafer W, the non-contact cleaning mechanism 30 starts to clean the component surface 2 of the wafer W. More specifically, the cleaning fluid is supplied from the cleaning fluid supply device 40 of the non-contact cleaning mechanism 30 to the cleaning fluid nozzle 33, and the cleaning fluid is sprayed to the element surface 2 of the wafer W from the cleaning fluid nozzle 33. At the same time, the nozzle moving mechanism 32 of the non-contact cleaning mechanism 30 moves the cleaning fluid nozzle 33 in the horizontal direction above the wafer W.

如參照圖10B之說明，藉由非接觸式清洗機構30清洗晶圓W之元件面2，亦可與開始研磨晶圓W之非元件面1同時。或是，如參照圖10C之說明，藉由非接觸式清洗機構30清洗晶圓W之元件面2，亦可從開始研磨晶圓W之非元件面1起經過指定時間Int後開始。As explained with reference to FIG. 10B, cleaning the component surface 2 of the wafer W by the non-contact cleaning mechanism 30 can also be performed at the same time as the non-component surface 1 of the wafer W is being polished. Or, as described with reference to FIG. 10C, cleaning the component surface 2 of the wafer W by the non-contact cleaning mechanism 30 can also start after a specified time Int has elapsed from the start of polishing the non-component surface 1 of the wafer W.

從清洗流體噴嘴33噴射之清洗流體，依可能附著元件面2之異物來選擇適切的清洗流體。清洗流體例如可為雙流體噴流、臭氧水、臭氧微氣泡水、電解水、超音波水、及藥劑之任何一個。一種實施形態之清洗流體亦可係清洗氣體。The cleaning fluid sprayed from the cleaning fluid nozzle 33 selects an appropriate cleaning fluid according to the foreign matter that may adhere to the component surface 2. The cleaning fluid may be any one of two-fluid jet, ozone water, ozone microbubble water, electrolyzed water, ultrasonic water, and medicament, for example. The cleaning fluid of one embodiment may also be a cleaning gas.

其次，動作控制部180驅動研磨帶供給機構41及帶輸送裝置46，施加指定之張力，並使研磨帶31以指定之速度在其長度方向行進。而後，平移旋轉運動機構60使研磨頭50、研磨帶供給機構41、導輥53a、53b、53c、53d、及帶輸送裝置46平移旋轉運動，同時研磨頭50使研磨帶31接觸晶圓W之非元件面1，並在沖洗液存在下研磨晶圓W之非元件面1。具體而言，加壓機構52將研磨片55推上上方，研磨片55藉由將研磨帶31之研磨面31a按壓於晶圓W的非元件面1，來研磨晶圓W之整個非元件面1。研磨裝置在晶圓W研磨中，隨時對晶圓W持續供給沖洗液及保護液。再者，研磨裝置於晶圓W研磨中，宜持續對晶圓W供給清洗流體。Next, the motion control unit 180 drives the abrasive tape supply mechanism 41 and the tape conveying device 46, applies a specified tension, and causes the abrasive tape 31 to travel in its longitudinal direction at a specified speed. Then, the translation and rotation movement mechanism 60 makes the polishing head 50, the polishing tape supply mechanism 41, the guide rollers 53a, 53b, 53c, 53d, and the tape conveying device 46 translate and rotate, and the polishing head 50 makes the polishing tape 31 contact the wafer W. The non-element surface 1, and the non-element surface 1 of the wafer W is polished in the presence of a rinse liquid. Specifically, the pressing mechanism 52 pushes the polishing sheet 55 upward, and the polishing sheet 55 presses the polishing surface 31a of the polishing tape 31 against the non-element surface 1 of the wafer W to polish the entire non-element surface of the wafer W. 1. During the polishing of the wafer W, the polishing device continuously supplies the rinse liquid and the protection liquid to the wafer W at any time. Furthermore, during the polishing of the wafer W, the polishing device should continuously supply the cleaning fluid to the wafer W.

本實施形態在晶圓W研磨中，係從保護液供給噴嘴28供給保護液至晶圓W之元件面2的中心部。因此，即使清洗流體噴嘴33移動至晶圓W之周緣部附近，晶圓W之中心部仍然藉由保護液覆蓋。特別是，即使提高設定晶圓W之旋轉速度，仍可至少藉由保護液覆蓋包含晶圓W之中心部的整個元件面2。結果，可有效防止異物附著於晶圓W之元件面2。In the polishing of the wafer W in this embodiment, the protection liquid is supplied from the protection liquid supply nozzle 28 to the center portion of the element surface 2 of the wafer W. Therefore, even if the cleaning fluid nozzle 33 moves to the vicinity of the periphery of the wafer W, the center of the wafer W is still covered by the protective liquid. In particular, even if the rotation speed of the set wafer W is increased, at least the entire element surface 2 including the center portion of the wafer W can be covered by the protective liquid. As a result, it is possible to effectively prevent foreign matter from adhering to the element surface 2 of the wafer W.

如上述，因為研磨片55之一端從晶圓W的周緣部擠出外側，另一端越過晶圓W之非元件面1的中心O1而延伸，所以研磨片55可使研磨帶31從晶圓W之非元件面1的中心O1接觸至最外部。晶圓W研磨中，由於軋輥11之位置靜止，因此軋輥11不致接觸研磨片55。再者，因為包含研磨片55之研磨頭50係平移旋轉運動，所以，即使在晶圓W之中心部仍可增大研磨帶31與晶圓W之相對速度。結果，研磨帶31可以高研磨率研磨包含最外部之晶圓W的整個非元件面1。As described above, since one end of the polishing sheet 55 is extruded from the peripheral edge of the wafer W, and the other end extends beyond the center O1 of the non-element surface 1 of the wafer W, the polishing sheet 55 allows the polishing tape 31 to be removed from the wafer W. The center O1 of the non-element surface 1 is in contact with the outermost part. During the polishing of the wafer W, since the position of the roller 11 is stationary, the roller 11 does not contact the polishing sheet 55. Furthermore, because the polishing head 50 including the polishing sheet 55 moves in translation and rotation, the relative speed between the polishing belt 31 and the wafer W can be increased even in the center of the wafer W. As a result, the polishing tape 31 can polish the entire non-element surface 1 including the outermost wafer W at a high polishing rate.

預設之時間經過後，加壓機構52使研磨片55下降，並將研磨帶31從晶圓W之非元件面1離開。然後，動作控制部180使基板保持部10、非接觸式清洗機構30、研磨頭50、研磨帶供給機構41、帶輸送裝置46、及平移旋轉運動機構60等之元件的動作停止，而結束晶圓W之研磨處理。如參照圖10A至圖10C之說明，動作控制部180亦可在晶圓W之非元件面1的研磨結束後（亦即，研磨帶31從非元件面1離開後）停止非接觸式清洗機構30，亦可與晶圓W之非元件面1的研磨結束同時停止非接觸式清洗機構30。After the preset time has elapsed, the pressing mechanism 52 lowers the polishing sheet 55 and separates the polishing tape 31 from the non-element surface 1 of the wafer W. Then, the action control unit 180 stops the actions of the components such as the substrate holding unit 10, the non-contact cleaning mechanism 30, the polishing head 50, the polishing tape supply mechanism 41, the tape conveying device 46, and the translation and rotation motion mechanism 60, and the crystal is finished. Grinding treatment of circle W. As explained with reference to FIGS. 10A to 10C, the action control unit 180 may also stop the non-contact cleaning mechanism after the polishing of the non-element surface 1 of the wafer W is completed (that is, after the polishing belt 31 is separated from the non-element surface 1) 30. The non-contact cleaning mechanism 30 may also be stopped at the same time as the polishing of the non-element surface 1 of the wafer W is completed.

採用本實施形態時，在研磨晶圓（基板）W之非元件面1的研磨具之一例的研磨帶31研磨非元件面1中，藉由非接觸式清洗機構30積極清洗元件面2。再者，從保護液供給噴嘴28供給之保護液覆蓋元件面2，防止異物到達元件面2。因此，可有效防止研磨屑等異物污染晶圓W之元件面2，結果，形成於元件面2之元件的可靠性提高。According to this embodiment, in the polishing belt 31, which is an example of a polishing tool for polishing the non-element surface 1 of the wafer (substrate) W, the non-element surface 1 is polished, and the element surface 2 is actively cleaned by the non-contact cleaning mechanism 30. Furthermore, the protection liquid supplied from the protection liquid supply nozzle 28 covers the element surface 2 to prevent foreign matter from reaching the element surface 2. Therefore, it is possible to effectively prevent contamination of the element surface 2 of the wafer W with foreign matter such as grinding debris, and as a result, the reliability of the element formed on the element surface 2 is improved.

此處，清洗基板表面（例如，元件面2）之方法，過去習知有使清洗刷或清洗海綿等清洗構件直接在基板表面滑動接觸之接觸式清洗方法（例如，摩擦清洗方法）。該接觸式清洗方法具有可有效除去附著於基板表面之比較大異物的優點。Here, as a method of cleaning the substrate surface (for example, element surface 2), a contact cleaning method (for example, a friction cleaning method) in which a cleaning member such as a cleaning brush or a cleaning sponge is directly slidingly contacted on the substrate surface is conventionally known. The contact cleaning method has the advantage of being able to effectively remove relatively large foreign objects attached to the surface of the substrate.

但是，因為接觸式清洗方法需要以指定力將清洗構件按壓於元件面2之按壓機構等的附帶設備，所以與非接觸式清洗方法比較，研磨裝置之構成複雜。再者，接觸式清洗方法可能會產生從基板表面除去之異物堆積於清洗構件，堆積於清洗構件之異物再度附著於元件面2的所謂逆污染之問題。因而，需要定期維修或更換清洗構件。而本實施形態清洗元件面2時，因為係以使用從雙流體噴流、臭氧水、臭氧微氣泡水、超音波水、藥劑、及清洗氣體等選擇的清洗流體之非接觸式清洗方法來進行，所以不致產生逆污染的問題。因而，非接觸式清洗方法與接觸式清洗方法比較，可降低維修頻率及營運成本。However, since the contact cleaning method requires auxiliary equipment such as a pressing mechanism that presses the cleaning member to the element surface 2 with a specified force, the structure of the polishing device is complicated compared to the non-contact cleaning method. Furthermore, the contact cleaning method may cause the problem of so-called reverse contamination that foreign matter removed from the surface of the substrate accumulates on the cleaning member, and the foreign matter accumulated on the cleaning member adheres to the element surface 2 again. Therefore, regular maintenance or replacement of cleaning components is required. In this embodiment, the element surface 2 is cleaned by a non-contact cleaning method using a cleaning fluid selected from two-fluid jets, ozone water, ozone microbubble water, ultrasonic water, chemicals, and cleaning gas. Therefore, the problem of reverse pollution will not occur. Therefore, compared with the contact cleaning method, the non-contact cleaning method can reduce the maintenance frequency and operating cost.

再者，採用本實施形態時，由於研磨晶圓W之非元件面1後，晶圓W之元件面2上幾乎不會附著異物，因此，可謀求縮短研磨處理晶圓W後進行之該晶圓W清洗處理的時間。結果，如後述，亦可使配置研磨裝置之基板處理裝置的處理量提高。Furthermore, in the case of this embodiment, since the non-element surface 1 of the wafer W is polished, the element surface 2 of the wafer W hardly adheres to foreign matter. Therefore, it is possible to shorten the size of the wafer after the wafer W is polished. Circle W cleaning treatment time. As a result, as will be described later, the throughput of a substrate processing apparatus equipped with a polishing apparatus can also be improved.

圖11係模式顯示具備上述研磨裝置之基板處理裝置的一種實施形態之俯視圖。本實施形態之基板處理裝置具有裝載卸載部121，其係具備裝載收容了多數個晶圓W之晶圓匣盒（基板匣盒）的複數個裝載埠122。裝載埠122中可搭載開放式匣盒、SMIF（晶舟承載(Standard Manufacturing Interface)盒）、或FOUP（前開式晶圓傳送盒(Front Opening Unified Pod)）。SMIF、FOUP係在內部收納晶圓匣盒，藉由以分隔壁覆蓋可保持與外部空間獨立之環境的密閉容器。Fig. 11 is a plan view schematically showing an embodiment of a substrate processing apparatus equipped with the above-mentioned polishing apparatus. The substrate processing apparatus of the present embodiment has a loading and unloading section 121, which is provided with a plurality of loading ports 122 for loading a wafer cassette (substrate cassette) in which a plurality of wafers W are accommodated. The loading port 122 can be loaded with an open cassette, SMIF (Standard Manufacturing Interface box), or FOUP (Front Opening Unified Pod). SMIF and FOUP are sealed containers that store wafer cassettes inside, and can maintain an environment independent of the external space by covering them with partition walls.

裝載卸載部121中設有可沿著裝載埠122之排列方向移動的第一搬送機器人（裝載機）123。第一搬送機器人123可進入搭載於裝載埠122之晶圓匣盒，而從晶圓匣盒取出晶圓W。The loading and unloading part 121 is provided with a first transfer robot (loader) 123 that can move along the arrangement direction of the loading port 122. The first transfer robot 123 can enter the cassette mounted on the loading port 122 and take out the wafer W from the cassette.

基板處理裝置進一步具備：可在水平方向移動之第二搬送機器人126；暫時放置晶圓W之第一暫置台140及第二暫置台141；研磨單元127；控制整個基板處理裝置之動作的系統控制器133；清洗研磨後之晶圓W的清洗單元172；及使清洗後之晶圓W乾燥的乾燥單元173。在第二暫置台141與清洗單元172之間配置有用於搬送晶圓W之第三搬送機器人150，在清洗單元172與乾燥單元173之間配置有用於搬送晶圓W的第四搬送機器人151。研磨單元127係上述之研磨裝置。亦可使用上述之動作控制部180作為系統控制器133，亦可將其內建於系統控制器133。The substrate processing apparatus further includes: a second transfer robot 126 that can move in a horizontal direction; a first temporary stage 140 and a second temporary stage 141 for temporarily placing the wafer W; a polishing unit 127; and a system control that controls the motion of the entire substrate processing apparatus 133; a cleaning unit 172 for cleaning the polished wafer W; and a drying unit 173 for drying the cleaned wafer W. A third transfer robot 150 for transferring the wafer W is arranged between the second temporary stage 141 and the cleaning unit 172, and a fourth transfer robot 151 for transferring the wafer W is arranged between the cleaning unit 172 and the drying unit 173. The grinding unit 127 is the aforementioned grinding device. The aforementioned motion control unit 180 can also be used as the system controller 133, or it can be built in the system controller 133.

其次，說明使用研磨單元127研磨晶圓W時晶圓W之搬送路線。複數個（例如25片）晶圓W在其元件面2朝上狀態下，收容於裝載埠122之晶圓匣盒（基板匣盒）內。第一搬送機器人123從晶圓匣盒取出1片晶圓W，並將晶圓W裝載於第一暫置台140。第二搬送機器人126從第一暫置台140取出晶圓W，並在晶圓W之非元件面1朝下的狀態下將晶圓W搬送至研磨單元127。如上述，藉由研磨單元127研磨晶圓W之非元件面1。第二搬送機器人126從研磨單元127取出研磨後之晶圓W，並裝載於第二暫置台141。第三搬送機器人150從第二暫置台141取出晶圓W並搬送至清洗單元172。Next, the transport route of the wafer W when the wafer W is polished using the polishing unit 127 will be described. A plurality of (for example, 25 wafers) of wafers W are accommodated in the wafer cassette (substrate cassette) of the loading port 122 with the element surface 2 facing upward. The first transfer robot 123 takes out one wafer W from the cassette, and loads the wafer W on the first temporary table 140. The second transfer robot 126 takes out the wafer W from the first temporary stage 140 and transfers the wafer W to the polishing unit 127 with the non-element surface 1 of the wafer W facing down. As described above, the non-element surface 1 of the wafer W is polished by the polishing unit 127. The second transfer robot 126 takes out the polished wafer W from the polishing unit 127 and loads it on the second temporary table 141. The third transfer robot 150 takes out the wafer W from the second temporary stage 141 and transfers it to the cleaning unit 172.

晶圓W在其研磨後之非元件面1朝下狀態下，藉由清洗單元172清洗。一種實施形態係清洗單元172備有：夾著晶圓W而配置之上側清洗具（例如，上側滾筒海綿）及下側清洗具（例如，下側滾筒海綿），並將清洗液供給至晶圓W之兩面，同時以此等清洗具清洗晶圓的兩面。The wafer W is cleaned by the cleaning unit 172 with the non-element surface 1 facing down after polishing. In one embodiment, the cleaning unit 172 is provided with: an upper cleaning tool (for example, upper roller sponge) and a lower cleaning tool (for example, lower roller sponge) are arranged with the wafer W sandwiched, and the cleaning liquid is supplied to the wafer Both sides of W, and at the same time clean both sides of the wafer with this cleaning tool.

如上述，經研磨單元127研磨後之晶圓W的元件面2已經藉由非接觸式清洗機構30清洗。因而，可減輕清洗單元172清洗處理晶圓W之負擔，並且可以比較短時間完成清洗處理。例如，可縮短上側清洗具清洗元件面2之時間，再者，亦可期待縮短上側清洗具及下側清洗具清洗晶圓W之兩面的時間。結果，可使基板處理裝置之處理量提高，再者，可降低清洗單元172之營運成本。一種實施形態亦可清洗單元172藉由下側清洗具僅清洗晶圓W之非元件面1。此時，由於可省略上側清洗具，因此可使清洗單元172之構成單純化，再者，可進一步降低清洗單元172之營運成本。As mentioned above, the device surface 2 of the wafer W after being polished by the polishing unit 127 has been cleaned by the non-contact cleaning mechanism 30. Therefore, the burden of cleaning and processing the wafer W by the cleaning unit 172 can be reduced, and the cleaning process can be completed in a relatively short time. For example, the time for the upper cleaning tool to clean the element surface 2 can be shortened, and it is also expected to shorten the time for the upper cleaning tool and the lower cleaning tool to clean both sides of the wafer W. As a result, the throughput of the substrate processing apparatus can be increased, and furthermore, the operating cost of the cleaning unit 172 can be reduced. In one embodiment, the cleaning unit 172 can clean only the non-element surface 1 of the wafer W by the lower cleaning tool. At this time, since the upper cleaning tool can be omitted, the structure of the cleaning unit 172 can be simplified, and furthermore, the operating cost of the cleaning unit 172 can be further reduced.

第四搬送機器人151從清洗單元172取出清洗後之晶圓W，並搬送至乾燥單元173。晶圓W在其清洗後之非元件面1朝下狀態下藉由乾燥單元173乾燥。本實施形態之乾燥單元173係以藉由使晶圓W在其軸心周圍高速旋轉而使晶圓W自旋乾燥的方式構成。一種實施形態之乾燥單元173亦可係使純水噴嘴及IPA噴嘴在晶圓W之半徑方向移動，並藉由從純水噴嘴及IPA噴嘴供給純水與IPA蒸氣（異丙醇與氮氣（N2 ）之混合物）至晶圓W的上面，來使晶圓W乾燥的IPA型。The fourth transport robot 151 takes out the cleaned wafer W from the cleaning unit 172 and transports it to the drying unit 173. The wafer W is dried by the drying unit 173 with the non-element surface 1 facing down after cleaning. The drying unit 173 of this embodiment is configured to spin-dry the wafer W by rotating the wafer W at a high speed around its axis. The drying unit 173 of one embodiment can also move the pure water nozzle and the IPA nozzle in the radial direction of the wafer W, and supply pure water and IPA vapor (isopropanol and nitrogen (N) from the pure water nozzle and the IPA nozzle). 2 ) The mixture of IPA type to the upper surface of the wafer W to dry the wafer W.

乾燥後之晶圓W在其非元件面1朝下狀態下，藉由第一搬送機器人123送回裝載埠122之晶圓匣盒。因此，基板處理裝置可在晶圓W之非元件面1朝下的狀態下，進行晶圓W之研磨、清洗、乾燥、及搬送至裝載卸載部的一連串工序。The dried wafer W is returned to the wafer cassette of the loading port 122 by the first transfer robot 123 with the non-component surface 1 facing down. Therefore, the substrate processing apparatus can perform a series of processes of polishing, cleaning, drying, and transporting the wafer W to the loading and unloading section with the non-element surface 1 of the wafer W facing down.

採用該基板處理裝置時，可在晶圓W之非元件面1朝下狀態下，有效研磨晶圓W之整個非元件面1。結果，因為不需要使晶圓W反轉，所以可防止空氣中之雜質附著於晶圓W，且可減少整體處理時間。再者，不需要使晶圓W反轉之反轉機，可使基板處理裝置之構成單純化，並削減費用。一種實施形態係基板處理裝置亦可進一步具備另外之研磨單元127。藉由基板處理裝置具備複數個研磨單元127，處理片數倍增，可使基板處理裝置之處理量提高。When this substrate processing apparatus is used, the entire non-element surface 1 of the wafer W can be effectively polished when the non-element surface 1 of the wafer W faces downward. As a result, since it is not necessary to reverse the wafer W, it is possible to prevent impurities in the air from adhering to the wafer W, and the overall processing time can be reduced. Furthermore, a reversing machine for reversing the wafer W is not required, so that the structure of the substrate processing apparatus can be simplified and the cost can be reduced. In one embodiment, the substrate processing apparatus may further include another polishing unit 127. Since the substrate processing apparatus is provided with a plurality of polishing units 127, the number of processed sheets is doubled, and the throughput of the substrate processing apparatus can be increased.

上述實施形態係以具有本發明所屬之技術領域的一般知識者可實施本發明為目的而記載者。熟悉本技術之業者當然可形成上述實施形態之各種修改例，本發明之技術性思想亦可適用於其他實施形態。因此，本發明不限定於所記載之實施形態，應係按照藉由申請專利範圍所定義之技術性思想作最廣範圍的解釋者。 (產業上之可利用性)The above-mentioned embodiments are described for the purpose of being able to carry out the present invention by those who have general knowledge in the technical field to which the present invention belongs. Of course, those skilled in the art can form various modifications of the above-mentioned embodiments, and the technical idea of the present invention can also be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, but should be interpreted in the widest range based on the technical ideas defined by the scope of the patent application. (Industrial availability)

本發明可利用於研磨晶圓等基板之背面的研磨裝置及研磨方法。再者，本發明可利用於具備研磨裝置之基板處理裝置。The present invention can be used in a polishing device and a polishing method for polishing the back surface of a substrate such as a wafer. Furthermore, the present invention can be applied to a substrate processing apparatus equipped with a polishing apparatus.

1:非元件面 2:元件面 10:基板保持部 11:軋輥 11a:基板保持面 11b:錐形面 12:軋輥旋轉機構 14A:第一皮帶 14B:第二皮帶 15A:第一馬達 15B:第二馬達 16A:第一軋輥座 16B:第二軋輥座 17A:上側第一軋輥座 17B:下側第一軋輥座 17C:樞軸 18A:第一致動器 18B:第二致動器 22:滑輪 23:底板 24A,24B,24C:軸承 25A:第一馬達支撐體 25B:第二馬達支撐體 26A:第一直接傳動導桿 26B:第二直接傳動導桿 27:沖洗液供給噴嘴 28:保護液供給噴嘴 30:非接觸式清洗機構 31:研磨帶 31a:研磨面 32:噴嘴移動機構 33:清洗流體噴嘴 34:噴嘴支臂 35:噴嘴回轉軸 36:馬達 37:清洗流體管線 38:流量調整器 40:清洗流體供給裝置 41:研磨帶供給機構 42:卷軸座 43:帶卷送卷軸 43a:張力馬達 44:帶卷收卷軸 44a:張力馬達 46:帶輸送裝置 47:帶輸送馬達 48:帶輸送軋輥 49:夾持軋輥 50:研磨頭 52:加壓機構 52a:活塞桿 52b:第一壓力室 52c:第二壓力室 53a,53b,53c,53d:導輥 55:研磨片 56:保持墊 57:背面板 60:平移旋轉運動機構 62:馬達 65:偏心接頭 67:軸承 68:軸承 69:工作台 70:曲柄軸桿 71:底座 75:軸承 79:支撐構件 85:臭氧產生器 86:電解水產生機 121:裝載卸載部 122:裝載埠 123:第一搬送機器人 126:第二搬送機器人 127:研磨單元 133:系統控制器 140:第一暫置台 141:第二暫置台 150:第三搬送機器人 151:第四搬送機器人 172:清洗單元 173:乾燥單元 180:動作控制部 CP:軸心 O1,O2:中心 W:晶圓1: Non-component side 2: component side 10: Board holding part 11: Roll 11a: substrate holding surface 11b: Conical surface 12: Roll rotation mechanism 14A: The first belt 14B: Second belt 15A: The first motor 15B: second motor 16A: The first roll stand 16B: The second roll stand 17A: The first roll stand on the upper side 17B: The first roll stand on the lower side 17C: Pivot 18A: First actuator 18B: second actuator 22: pulley 23: bottom plate 24A, 24B, 24C: Bearing 25A: first motor support 25B: second motor support 26A: The first direct drive guide rod 26B: The second direct drive guide rod 27: Flushing fluid supply nozzle 28: Protection fluid supply nozzle 30: Non-contact cleaning mechanism 31: Grinding belt 31a: Grinding surface 32: Nozzle moving mechanism 33: Cleaning fluid nozzle 34: Nozzle arm 35: Nozzle rotation axis 36: Motor 37: Cleaning fluid lines 38: flow regulator 40: Cleaning fluid supply device 41: Abrasive belt supply mechanism 42: reel seat 43: take-up reel 43a: Tension motor 44: with take-up reel 44a: Tension motor 46: Belt conveyor 47: Belt conveyor motor 48: Belt conveyor roller 49: Clamping roll 50: Grinding head 52: Pressure mechanism 52a: Piston rod 52b: The first pressure chamber 52c: second pressure chamber 53a, 53b, 53c, 53d: guide roller 55: Grinding sheet 56: Keep the pad 57: back panel 60: translation and rotation mechanism 62: Motor 65: eccentric joint 67: Bearing 68: Bearing 69: Workbench 70: crank shaft 71: Base 75: bearing 79: Supporting member 85: ozone generator 86: electrolyzed water generator 121: Loading and unloading department 122: load port 123: The first transport robot 126: The second transport robot 127: Grinding unit 133: System Controller 140: First Temporary Station 141: Second Temporary Station 150: The third transport robot 151: The fourth transport robot 172: Cleaning unit 173: Drying unit 180: Motion Control Department CP: axis O1, O2: Center W: Wafer

圖1係顯示研磨裝置之一種實施形態的模式圖。 圖2係詳係顯示基板保持部之模式圖。 圖3係顯示圖2所示之軋輥旋轉機構的俯視圖。 圖4係圖3之A－A線剖面圖。 圖5係放大顯示軋輥之上部一例的模式圖。 圖6係顯示研磨頭之配置一例的俯視圖。 圖7係從圖6之箭頭B指示的方向觀看之圖。 圖8係顯示非接觸式清洗機構之一例的模式圖。 圖9係顯示清洗流體噴嘴在晶圓之上方移動的情形之模式圖。 圖10A係顯示清洗流體之供給時間例的曲線圖。 圖10B係顯示清洗流體之供給時間例的曲線圖。 圖10C係顯示清洗流體之供給時間例的曲線圖。 圖11係模式顯示具備研磨裝置之基板處理裝置的一種實施形態之俯視圖。Fig. 1 is a schematic diagram showing an embodiment of the polishing device. Fig. 2 is a schematic diagram showing in detail the substrate holding portion. Fig. 3 is a plan view showing the roll rotating mechanism shown in Fig. 2; Figure 4 is a cross-sectional view taken along line A-A in Figure 3. Fig. 5 is an enlarged schematic diagram showing an example of the upper part of the roll. Fig. 6 is a plan view showing an example of the arrangement of the polishing head. Fig. 7 is a view viewed from the direction indicated by arrow B in Fig. 6. Fig. 8 is a schematic diagram showing an example of a non-contact cleaning mechanism. FIG. 9 is a schematic diagram showing a situation where the cleaning fluid nozzle moves above the wafer. Fig. 10A is a graph showing an example of the supply time of the cleaning fluid. Fig. 10B is a graph showing an example of the supply time of the cleaning fluid. Fig. 10C is a graph showing an example of the supply time of the cleaning fluid. Fig. 11 is a plan view schematically showing an embodiment of a substrate processing apparatus equipped with a polishing apparatus.

1:非元件面1: Non-component side

2:元件面2: component side

10:基板保持部10: Board holding part

11:軋輥11: Roll

11a:基板保持面11a: substrate holding surface

27:沖洗液供給噴嘴27: Flushing fluid supply nozzle

28:保護液供給噴嘴28: Protection fluid supply nozzle

30:非接觸式清洗機構30: Non-contact cleaning mechanism

31:研磨帶31: Grinding belt

31a:研磨面31a: Grinding surface

32:噴嘴移動機構32: Nozzle moving mechanism

33:清洗流體噴嘴33: Cleaning fluid nozzle

34:噴嘴支臂34: Nozzle arm

35:噴嘴回轉軸35: Nozzle rotation axis

36:馬達36: Motor

41:研磨帶供給機構41: Abrasive belt supply mechanism

42:卷軸座42: reel seat

43:帶卷送卷軸43: take-up reel

43a:張力馬達43a: Tension motor

44:帶卷收卷軸44: with take-up reel

44a:張力馬達44a: Tension motor

46:帶輸送裝置46: Belt conveyor

47:帶輸送馬達47: Belt conveyor motor

48:帶輸送軋輥48: Belt conveyor roller

49:夾持軋輥49: Clamping roll

50:研磨頭50: Grinding head

52:加壓機構52: Pressure mechanism

52a:活塞桿52a: Piston rod

52b:第一壓力室52b: The first pressure chamber

52c:第二壓力室52c: second pressure chamber

53a,53b,53c,53d:導輥53a, 53b, 53c, 53d: guide roller

55:研磨片55: Grinding sheet

56:保持墊56: Keep the pad

57:背面板57: back panel

60:平移旋轉運動機構60: translation and rotation mechanism

62:馬達62: Motor

65:偏心接頭65: eccentric joint

67:軸承67: Bearing

68:軸承68: Bearing

69:工作台69: Workbench

70:曲柄軸桿70: crank shaft

71:底座71: Base

75:軸承75: bearing

79:支撐構件79: Supporting member

180:動作控制部180: Motion Control Department

O1:中心O1: Center

W:晶圓W: Wafer

Claims (16)

一種研磨裝置，其特徵為具備： 基板保持部，其係在其元件面朝上之狀態下保持基板，並使該基板旋轉； 研磨具，其係與前述基板之非元件面接觸，來研磨該基板之非元件面；及 非接觸式清洗機構，其係在以前述研磨具研磨前述基板之非元件面期間，清洗前述基板之元件面。A grinding device characterized by: The substrate holding part, which holds the substrate with the component face up, and rotates the substrate; An abrasive tool, which is in contact with the non-element surface of the aforementioned substrate to grind the non-element surface of the substrate; and The non-contact cleaning mechanism cleans the component surface of the substrate during the polishing of the non-component surface of the substrate with the abrasive tool. 如請求項1之研磨裝置，其中前述非接觸式清洗機構具有： 清洗流體噴嘴，其係朝向前述基板之元件面噴射清洗流體；及 噴嘴移動機構，其係使前述清洗流體噴嘴在前述基板之元件面的上方移動。Such as the polishing device of claim 1, wherein the aforementioned non-contact cleaning mechanism has: A cleaning fluid nozzle, which sprays cleaning fluid toward the element surface of the aforementioned substrate; and The nozzle moving mechanism moves the cleaning fluid nozzle above the element surface of the substrate. 如請求項2之研磨裝置，其中前述清洗流體噴嘴係使雙流體噴流朝向前述基板之元件面噴射的雙流體噴流噴嘴。The polishing device according to claim 2, wherein the cleaning fluid nozzle is a two-fluid jet nozzle that sprays a two-fluid jet toward the element surface of the substrate. 如請求項2之研磨裝置，其中前述非接觸式清洗機構進一步包含臭氧發生器， 前述清洗流體噴嘴朝向前述基板之元件面噴射臭氧水、或臭氧微氣泡水。Such as the polishing device of claim 2, wherein the aforementioned non-contact cleaning mechanism further includes an ozone generator, The cleaning fluid nozzle sprays ozone water or ozone microbubble water toward the element surface of the substrate. 如請求項2之研磨裝置，其中前述非接觸式清洗機構進一步包含電解水產生機， 前述清洗流體噴嘴朝向前述基板之元件面噴射電解水。Such as the polishing device of claim 2, wherein the aforementioned non-contact cleaning mechanism further includes an electrolyzed water generator, The cleaning fluid nozzle sprays electrolytic water toward the element surface of the substrate. 如請求項2之研磨裝置，其中前述清洗流體噴嘴朝向前述基板之元件面噴射超音波水或藥劑。The polishing device of claim 2, wherein the cleaning fluid nozzle sprays ultrasonic water or medicine toward the element surface of the substrate. 如請求項1~6中任一項之研磨裝置，其中進一步具備保護液供給噴嘴，其係在前述基板之元件面供給保護液。The polishing device according to any one of claims 1 to 6, which is further provided with a protection liquid supply nozzle, which supplies the protection liquid on the element surface of the aforementioned substrate. 一種研磨方法，其特徵為： 在其元件面朝上之狀態下保持基板，並使該基板旋轉， 將研磨具按壓於前述旋轉之基板的非元件面來研磨該非元件面， 在研磨前述基板之非元件面的期間，以非接觸式清洗機構清洗前述基板之元件面。A grinding method characterized by: Hold the substrate with the component face up, and rotate the substrate, Press the abrasive tool on the non-element surface of the aforementioned rotating substrate to polish the non-element surface, During the polishing of the non-element surface of the substrate, the element surface of the substrate is cleaned by a non-contact cleaning mechanism. 如請求項8之研磨方法，其中前述基板之元件面的清洗，係藉由使清洗流體噴嘴在前述基板之元件面的上方移動，並從該清洗流體噴嘴噴射清洗流體至前述基板之元件面來進行。The polishing method of claim 8, wherein the cleaning of the component surface of the substrate is performed by moving a cleaning fluid nozzle above the component surface of the substrate, and spraying the cleaning fluid from the cleaning fluid nozzle to the component surface of the substrate get on. 如請求項9之研磨方法，其中前述清洗流體噴嘴係朝向前述基板之元件面噴射雙流體噴流。The polishing method of claim 9, wherein the cleaning fluid nozzle sprays a two-fluid jet toward the element surface of the substrate. 如請求項9之研磨方法，其中前述清洗流體噴嘴係朝向前述基板之元件面噴射臭氧水、或臭氧微氣泡水。The polishing method of claim 9, wherein the cleaning fluid nozzle sprays ozone water or ozone microbubble water toward the element surface of the substrate. 如請求項9之研磨方法，其中前述清洗流體噴嘴係朝向前述基板之元件面噴射電解水。The polishing method of claim 9, wherein the cleaning fluid nozzle sprays electrolytic water toward the element surface of the substrate. 如請求項9之研磨方法，其中前述清洗流體噴嘴係朝向前述基板之元件面噴射超音波水或藥劑。The polishing method of claim 9, wherein the cleaning fluid nozzle sprays ultrasonic water or chemicals toward the element surface of the substrate. 如請求項8~13中任一項之研磨方法，其中係在研磨前述基板之非元件面期間，進一步供給保護液至前述基板的元件面。The polishing method according to any one of claims 8 to 13, wherein during the polishing of the non-element surface of the substrate, a protective liquid is further supplied to the element surface of the substrate. 一種基板處理裝置，其特徵為具備： 請求項1~7中任一項之研磨裝置； 清洗單元，其係清洗藉由前述研磨裝置所研磨之基板；及 乾燥單元，其係使被前述清洗單元所清洗之基板乾燥。A substrate processing device, which is characterized by having: The grinding device of any one of claims 1 to 7; A cleaning unit, which cleans the substrate polished by the aforementioned polishing device; and The drying unit dries the substrate cleaned by the aforementioned cleaning unit. 如請求項15之基板處理裝置，其中前述清洗單元係僅清洗前述基板之非元件面。The substrate processing apparatus of claim 15, wherein the cleaning unit cleans only the non-element surface of the substrate.
TW109123683A 2019-09-03 2020-07-14 Polishing device, polishing method and substrate processing device TW202112496A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019160218A JP7406943B2 (en) 2019-09-03 2019-09-03 Polishing equipment, polishing method, and substrate processing equipment
JP2019-160218 2019-09-03

Publications (1)

Publication Number Publication Date
TW202112496A true TW202112496A (en) 2021-04-01

Family

ID=74847361

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109123683A TW202112496A (en) 2019-09-03 2020-07-14 Polishing device, polishing method and substrate processing device

Country Status (3)

Country Link
JP (1) JP7406943B2 (en)
TW (1) TW202112496A (en)
WO (1) WO2021044694A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117260515B (en) * 2023-11-22 2024-02-13 北京特思迪半导体设备有限公司 Dynamic linkage control method of polishing machine

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273961A (en) * 2003-03-12 2004-09-30 Ebara Corp Cleaning device of metal wiring forming substrate
JP4507967B2 (en) * 2005-04-20 2010-07-21 セイコーエプソン株式会社 Substrate cleaning device
JP6210935B2 (en) * 2013-11-13 2017-10-11 東京エレクトロン株式会社 Polishing and cleaning mechanism, substrate processing apparatus, and substrate processing method
JP2017108113A (en) * 2015-11-27 2017-06-15 株式会社荏原製作所 Substrate processing apparatus, substrate processing method, and control program of substrate processing apparatus
JP7148349B2 (en) * 2017-11-14 2022-10-05 株式会社荏原製作所 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Also Published As

Publication number Publication date
JP7406943B2 (en) 2023-12-28
JP2021040022A (en) 2021-03-11
WO2021044694A1 (en) 2021-03-11

Similar Documents

Publication Publication Date Title
KR102322525B1 (en) Apparatus and method for processing a surface of a substrate
TW417194B (en) A cleaner
JP3979750B2 (en) Substrate polishing equipment
TWI774776B (en) Method and apparatus for polishing a substrate, and method for processing a substrate
JP6908496B2 (en) Polishing equipment
TW201622040A (en) Substrate processing apparatus and processing method
JP2014167996A (en) Polishing device and polishing method
JP2001018169A (en) Polishing device
JP3560051B2 (en) Substrate polishing method and apparatus
TWI788454B (en) Substrate processing apparatus and substrate processing method
TWI765125B (en) Substrate processing apparatus, substrate processing method, and storage medium storing program
TW202112496A (en) Polishing device, polishing method and substrate processing device
JP6445298B2 (en) Polishing apparatus and processing method
KR102628175B1 (en) Substrate processing apparatus and substrate processing method
KR100496916B1 (en) Polishing method and apparatus of workpiece
JP2017174940A (en) Polishing device and polishing method
JP6346541B2 (en) Buff processing apparatus and substrate processing apparatus
JP2023097533A (en) Polishing device and polishing method
JP2016078156A (en) Processing module
JP2019042923A (en) Polishing device and processing method
TW201842983A (en) Apparatus and method for cleaning back surface of substrate capable of removing particles from a back surface of a substrate with a higher removal rate