JPH10500257A - ヘテロ接合エネルギー傾斜構造 - Google Patents
ヘテロ接合エネルギー傾斜構造Info
- Publication number
- JPH10500257A JPH10500257A JP8514714A JP51471496A JPH10500257A JP H10500257 A JPH10500257 A JP H10500257A JP 8514714 A JP8514714 A JP 8514714A JP 51471496 A JP51471496 A JP 51471496A JP H10500257 A JPH10500257 A JP H10500257A
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- Prior art keywords
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- inp
- inga
- semiconductor
- Prior art date
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- Granted
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- 239000004065 semiconductor Substances 0.000 claims abstract description 91
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 54
- 239000006096 absorbing agent Substances 0.000 claims abstract description 38
- 239000002772 conduction electron Substances 0.000 claims abstract description 23
- 238000012546 transfer Methods 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000000956 alloy Substances 0.000 abstract description 41
- 238000005381 potential energy Methods 0.000 abstract description 17
- 238000005036 potential barrier Methods 0.000 abstract description 8
- 240000002329 Inga feuillei Species 0.000 abstract 5
- 230000027756 respiratory electron transport chain Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 302
- 238000005421 electrostatic potential Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910000967 As alloy Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 1
- 229910001942 caesium oxide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012887 quadratic function Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.半導体ヘテロ接合構造体であって, p型でバンドギャップが狭く,電子親和度が大きい,過剰な伝導電子を有する 電子ソース層と, 空乏化されたp型の半導体傾斜層であって,最初の組成において前記p型層に 一致する電子親和度をもたらし,最後の組成において次の層に一致する電子親和 度をもたらす半導体傾斜層と, 空乏化されたn型でバンドギャップが広く,電子親和度が小さい,前記半導体 傾斜層の上に形成された半導体ビルトインフィールド層と, 非ドープでバンドギャップが広く,電子親和度が小さい,前記ビルトインフィ ールド層の上に形成された電子コレクタ層と, から成る構造体。 2.III-V族半導体ヘテロ接合構造体であって, 電子の光生成または拡散移動による過剰伝導電子を有するp型(InGa)As電子ソ ース層と, 前記(InGa)As層上に形成された,空乏化された p型III-V族半導体傾斜層と, 前記半導体傾斜層上に形成された,空乏化されたn型InPビルトインフィール ド層と, 前記ビルトインフィールド層上に形成された非ドープInP:φ電子コレクタ層と , から成る構造体。 3.p-i-nフォトダイオードであって, InP:p型基板と, 前記基板に対しオーミック接触を形成する背面コンタクトパッドと, 前記基板上に形成されたp型(InGa)Asアブソーバ層と, 前記(InGa)As層上に形成された,空乏化されたp型III-V族半導体傾斜層と, 前記半導体傾斜層上に形成された,空乏化されたn型InPビルトインフィール ド層と, 前記ビルトインフィールド層上に形成された,非ドープInP電子コレクタ層と , 前記非ドープコレクタ層上に形成されたn型InP層と, 前記n型InP層への表面オーミックコンタクトと, から成るフォトダイオード。 4.移動電子フォトカソードであって, InP:p型基板と, 前記基板上に形成されたp型(InGa)Asアブソーバ層と, 前記基板または前記アブソーバ層に対しオーミック接触を形成するコンタクト パッドと, 前記(InGa)As層上に形成された,空乏化されたp型III-V族半導体傾斜層と, 前記半導体傾斜層上に形成された,空乏化されたn型InPビルトインフィール ド層と, 前記ビルトインフィールド層上に形成された,非ドープInP電子コレクタ層と , 前記非ドープInP層上の表面ショットキー障壁と, から成るフォトカソード。 5.請求項1に記載のヘテロ接合構造体であっ て,空乏化されたp型半導体傾斜層が短縮され,n型ビルトインフィールド層が n型半導体傾斜層に取り替えられる, ところの構造体。 6.請求項3に記載のフォトダイオード構造体であって,空乏化されたp型半導 体傾斜層が短縮され,n型ビルトインフィールド層がn型半導体傾斜層に取り替 えられる, ところの構造体。 7.請求項4に記載のフォトカソード構造体であって,空乏化されたp型半導体 傾斜層が短縮され,n型ビルトインフィールド層がn型半導体傾斜層に取り替え られる, ところの構造体。 8.請求項1に記載のヘテロ接合構造体であって,空乏化されたp型半導体傾斜 層は,仮想合金傾斜を与えるための傾斜した層厚を有する超格子構造により実現 される, ところの構造体。 9.請求項3に記載のフォトダイオード構造体であって,空乏化されたp型半導 体傾斜層は,仮想合金傾斜を与えるための傾斜した層厚を有する超格子構造によ り実現される, ところの構造体。 10.請求項4に記載のフォトカソード構造体であって,空乏化されたp型半導 体傾斜層は,仮想合金傾斜を与えるための傾斜した層厚を有する超格子構造によ り実現される, ところの構造体。 11.請求項2に記載のヘテロ接合構造体であって,(InGa)As電子ソース層が(I nGa)(AsP)または(AlGaIn)As層に取り替えられる, ところの構造体。 12.請求項3に記載のフォトダイオード構造体であって,(InGa)Asアブソーバ 層が(InGa)(AsP)ま たは(AlGaIn)Asアブソーバ層に取り替えられる, ところの構造体。 13.請求項4に記載のフォトカソード構造体であって,(InGa)Asアブソーバ層 が(InGa)(AsP)または(AlGaIn)Asアブソーバ層に取り替えられる, ところの構造体。 14.請求項4に記載のフォトカソード構造体であって,p型InPハイ-フィール ド層が非ドープInPコレクタ層とショットキー障壁の間に挿入される, ところの構造体。 15.請求項1に記載のヘテロ接合構造体であって,半導体材料はIII-V族材料 である, ところの構造体。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US332,880 | 1989-04-03 | ||
US08/332,880 | 1994-11-01 | ||
US08/332,880 US5576559A (en) | 1994-11-01 | 1994-11-01 | Heterojunction electron transfer device |
PCT/US1995/013779 WO1996013864A1 (en) | 1994-11-01 | 1995-10-25 | Heterojunction energy gradient structure |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH10500257A true JPH10500257A (ja) | 1998-01-06 |
JP3156851B2 JP3156851B2 (ja) | 2001-04-16 |
Family
ID=23300254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51471496A Expired - Lifetime JP3156851B2 (ja) | 1994-11-01 | 1995-10-25 | ヘテロ接合エネルギー傾斜構造 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5576559A (ja) |
EP (1) | EP0789935B1 (ja) |
JP (1) | JP3156851B2 (ja) |
KR (1) | KR100393461B1 (ja) |
CA (1) | CA2201737C (ja) |
DE (1) | DE69530505T2 (ja) |
WO (1) | WO1996013864A1 (ja) |
Cited By (3)
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JP2003174187A (ja) * | 2001-12-07 | 2003-06-20 | Sumitomo Chem Co Ltd | 薄膜半導体エピタキシャル基板及びその製造方法 |
JP2004088107A (ja) * | 2002-08-23 | 2004-03-18 | Agilent Technol Inc | エミッタ・ベース・グレーディング構造が改良されたヘテロ接合バイポーラ・トランジスタ(hbt) |
JP2013503455A (ja) * | 2009-08-31 | 2013-01-31 | インテヴァック インコーポレイテッド | カットオフ波長を有する低エネルギー携帯性微弱光用カメラ |
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US5818096A (en) * | 1996-04-05 | 1998-10-06 | Nippon Telegraph And Telephone Corp. | Pin photodiode with improved frequency response and saturation output |
JP2002231992A (ja) * | 2001-02-02 | 2002-08-16 | Toshiba Corp | 半導体受光素子 |
AU2003212899A1 (en) * | 2002-02-01 | 2003-09-02 | Picometrix, Inc. | Enhanced photodetector |
US6815790B2 (en) * | 2003-01-10 | 2004-11-09 | Rapiscan, Inc. | Position sensing detector for the detection of light within two dimensions |
US7242069B2 (en) * | 2003-05-05 | 2007-07-10 | Udt Sensors, Inc. | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
US8035183B2 (en) * | 2003-05-05 | 2011-10-11 | Udt Sensors, Inc. | Photodiodes with PN junction on both front and back sides |
US7880258B2 (en) * | 2003-05-05 | 2011-02-01 | Udt Sensors, Inc. | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
US7576369B2 (en) * | 2005-10-25 | 2009-08-18 | Udt Sensors, Inc. | Deep diffused thin photodiodes |
US7655999B2 (en) | 2006-09-15 | 2010-02-02 | Udt Sensors, Inc. | High density photodiodes |
US7279731B1 (en) | 2006-05-15 | 2007-10-09 | Udt Sensors, Inc. | Edge illuminated photodiodes |
US8519503B2 (en) | 2006-06-05 | 2013-08-27 | Osi Optoelectronics, Inc. | High speed backside illuminated, front side contact photodiode array |
US8120023B2 (en) * | 2006-06-05 | 2012-02-21 | Udt Sensors, Inc. | Low crosstalk, front-side illuminated, back-side contact photodiode array |
US7256470B2 (en) * | 2005-03-16 | 2007-08-14 | Udt Sensors, Inc. | Photodiode with controlled current leakage |
US7709921B2 (en) * | 2008-08-27 | 2010-05-04 | Udt Sensors, Inc. | Photodiode and photodiode array with improved performance characteristics |
US8686529B2 (en) | 2010-01-19 | 2014-04-01 | Osi Optoelectronics, Inc. | Wavelength sensitive sensor photodiodes |
US8164151B2 (en) * | 2007-05-07 | 2012-04-24 | Osi Optoelectronics, Inc. | Thin active layer fishbone photodiode and method of manufacturing the same |
US7057254B2 (en) * | 2003-05-05 | 2006-06-06 | Udt Sensors, Inc. | Front illuminated back side contact thin wafer detectors |
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US8399909B2 (en) | 2009-05-12 | 2013-03-19 | Osi Optoelectronics, Inc. | Tetra-lateral position sensing detector |
US8912615B2 (en) | 2013-01-24 | 2014-12-16 | Osi Optoelectronics, Inc. | Shallow junction photodiode for detecting short wavelength light |
EP2808908B1 (en) * | 2013-05-31 | 2023-04-19 | Mellanox Technologies, Ltd. | High-speed photodetector |
CN109671600B (zh) * | 2019-01-31 | 2023-10-20 | 南京工程学院 | 一种波长可调的AlGaAs光电阴极 |
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US4839706A (en) * | 1986-08-07 | 1989-06-13 | Polaroid Corporation | Avalanche photodetector |
JPH022691A (ja) * | 1988-06-17 | 1990-01-08 | Nec Corp | 半導体受光素子 |
US5060028A (en) * | 1989-01-19 | 1991-10-22 | Hewlett-Packard Company | High band-gap opto-electronic device |
JPH03231477A (ja) * | 1990-02-06 | 1991-10-15 | Fujitsu Ltd | アバランシェフォトダイオード |
US5047821A (en) * | 1990-03-15 | 1991-09-10 | Intevac, Inc. | Transferred electron III-V semiconductor photocathode |
-
1994
- 1994-11-01 US US08/332,880 patent/US5576559A/en not_active Expired - Lifetime
-
1995
- 1995-10-25 EP EP95938897A patent/EP0789935B1/en not_active Expired - Lifetime
- 1995-10-25 JP JP51471496A patent/JP3156851B2/ja not_active Expired - Lifetime
- 1995-10-25 WO PCT/US1995/013779 patent/WO1996013864A1/en active IP Right Grant
- 1995-10-25 DE DE69530505T patent/DE69530505T2/de not_active Expired - Lifetime
- 1995-10-25 CA CA002201737A patent/CA2201737C/en not_active Expired - Lifetime
- 1995-10-25 KR KR1019970702892A patent/KR100393461B1/ko not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003174187A (ja) * | 2001-12-07 | 2003-06-20 | Sumitomo Chem Co Ltd | 薄膜半導体エピタキシャル基板及びその製造方法 |
JP2004088107A (ja) * | 2002-08-23 | 2004-03-18 | Agilent Technol Inc | エミッタ・ベース・グレーディング構造が改良されたヘテロ接合バイポーラ・トランジスタ(hbt) |
JP2013503455A (ja) * | 2009-08-31 | 2013-01-31 | インテヴァック インコーポレイテッド | カットオフ波長を有する低エネルギー携帯性微弱光用カメラ |
Also Published As
Publication number | Publication date |
---|---|
DE69530505D1 (de) | 2003-05-28 |
US5576559A (en) | 1996-11-19 |
EP0789935A1 (en) | 1997-08-20 |
CA2201737C (en) | 2000-05-16 |
JP3156851B2 (ja) | 2001-04-16 |
EP0789935B1 (en) | 2003-04-23 |
WO1996013864A1 (en) | 1996-05-09 |
CA2201737A1 (en) | 1996-05-09 |
DE69530505T2 (de) | 2004-04-01 |
KR970707593A (ko) | 1997-12-01 |
EP0789935A4 (en) | 1998-08-19 |
KR100393461B1 (ko) | 2004-01-24 |
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