JPH10284759A - Light-emitting device and display using the same - Google Patents

Light-emitting device and display using the same

Info

Publication number
JPH10284759A
JPH10284759A JP9187997A JP9187997A JPH10284759A JP H10284759 A JPH10284759 A JP H10284759A JP 9187997 A JP9187997 A JP 9187997A JP 9187997 A JP9187997 A JP 9187997A JP H10284759 A JPH10284759 A JP H10284759A
Authority
JP
Japan
Prior art keywords
light
light emitting
package
emitting element
mold member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9187997A
Other languages
Japanese (ja)
Other versions
JP3468018B2 (en
Inventor
Kunihiro Nagamine
邦浩 永峰
Yuichi Fujiwara
勇一 藤原
Kunihiro Izuno
訓宏 泉野
Isato Takeuchi
勇人 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP09187997A priority Critical patent/JP3468018B2/en
Publication of JPH10284759A publication Critical patent/JPH10284759A/en
Application granted granted Critical
Publication of JP3468018B2 publication Critical patent/JP3468018B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PROBLEM TO BE SOLVED: To improve luminance and contrast ratio by making molding material contain diffusion agent, which makes the LED luminance decrease ratio smaller than the dark luminance decrease rate of a light-emitting device. SOLUTION: A light-emitting element 203 is arranged in a recessed part of a package 202. An outer electrode 204 which is capable of electric connection with the outside is installed on the package 202. An electrode of a light-emitting element 203 is electrically connected with the outer electrode 204 by using a conductive wire 205. A transparent mold member 201 for protecting semiconductor from external environment is formed on the light-emitting element 203. In the mold member, a diffusion agent 211 is contained, considering that the inner wall of a package aperture part is dark color system and use of reflection on the inner wall cannot be expected. By containing the diffusion agent 211, the light from the light-emitting element towards the package aperture part inner wall direction is diffused and effectively used, so that emission luminance can be improved.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【産業上の利用分野】本願発明は、各種デ−タを表示可
能なディスプレイ、ラインセンサ−の光源やホトインタ
ラプタなどの光センサーなどに利用される発光素子を用
いた発光装置や表示装置に係わり、特に発光輝度及びコ
ントラスト比の高い発光装置及びそれを用いた高精細、
広視野角で高コントラスト表示が可能な表示装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-emitting device and a display device using a light-emitting element used for a display capable of displaying various data, a light source of a line sensor, and a light sensor such as a photo-interrupter. In particular, a light emitting device having a high emission luminance and a high contrast ratio and a high definition using the same,
The present invention relates to a display device capable of high-contrast display with a wide viewing angle.

【従来技術】今日、１０００ｍｃｄ以上にも及ぶ超高輝
度に発光可能な半導体発光素子がＲＧＢそれぞれ形成さ
れた。このような発光素子を利用した発光装置は、屋内
または屋外でフルカラ−発光可能なＬＥＤディスプレ
イ、各種センサーやインジケータなど種々の分野に利用
され始めている。このような半導体発光素子を利用した
発光装置の例として図５（Ａ）、（Ｂ）、（Ｃ）の如き
表面実装型ＬＥＤがある。表面実装型ＬＥＤは、チップ
抵抗などの他の表面実装型電子部品と同様にチップマウ
ンタ−と半田リフローにて実装が可能である。表面実装
型ＬＥＤは、小型化可能であると共に比較的高密度に信
頼性よく実装できる。このような発光装置は、何れもエ
ポキシ樹脂や液晶ポリマーなどの各種樹脂、セラミック
などによって形成されたパッケージ５０２上等に発光素
子５０３を配置させ外部電極５０４によって外部と電気
的に接続させている。発光素子５０３と外部電極５０４
とは、金線などの導電性ワイヤーやＡｇペーストを利用
した導電性接着剤である電気的接続部材５０５で電気的
に接続されている。また、発光素子５０３上には外部環
境から保護するために透光性のモールド部材５０１が設
けられている。表面実装型ＬＥＤは、レンズ効果が無
い、或いはレンズ効果が小さいため広範囲から視認でき
視野角が広い。その反面正面輝度が低くくなる。そのた
め、図５（Ｂ）、（Ｃ）の如く発光素子５０３からの光
を乳白色や白色系のパッケージ内側面の反射を利用し発
光効率を向上させている。このような発光装置に外部か
ら電力を供給することによって発光装置を効率よく発光
させることができる。2. Description of the Related Art Today, semiconductor light emitting devices capable of emitting light with an ultra-high luminance of 1000 mcd or more have been formed for each of RGB. Light emitting devices using such light emitting elements have begun to be used in various fields such as LED displays capable of full color light emission indoors or outdoors, various sensors and indicators. As an example of a light emitting device using such a semiconductor light emitting element, there is a surface mount LED as shown in FIGS. 5 (A), 5 (B) and 5 (C). The surface mount LED can be mounted by a chip mounter and solder reflow similarly to other surface mount electronic components such as a chip resistor. The surface mount type LED can be miniaturized and can be mounted at a relatively high density with high reliability. In any of such light-emitting devices, a light-emitting element 503 is arranged on a package 502 formed of various resins such as an epoxy resin or a liquid crystal polymer, ceramic, or the like, and is electrically connected to the outside by an external electrode 504. Light emitting element 503 and external electrode 504
Are electrically connected by an electric connection member 505 which is a conductive wire such as a gold wire or a conductive adhesive using an Ag paste. A light-transmitting mold member 501 is provided on the light-emitting element 503 to protect the light-emitting element 503 from an external environment. The surface mount type LED has no lens effect or has a small lens effect, and can be visually recognized from a wide range and has a wide viewing angle. On the other hand, the front luminance decreases. Therefore, as shown in FIGS. 5B and 5C, the light from the light emitting element 503 is improved by utilizing the reflection on the inner surface of the milky white or white package. By supplying power to such a light emitting device from the outside, the light emitting device can emit light efficiently.

【発明が解決しようとする課題】しかしながら、このよ
うな発光装置では、高輝度且つコントラスト比の高い発
光装置とすることができなかった。具体的には、発光装
置を表示装置や光センサーとして利用するときは、発光
装置が発光している時の正面輝度と、発光していないと
きの暗輝度（ＬＥＤを点灯していないときの外光による
正面反射輝度）の差が大きいことが好ましい。即ち、表
示装置などは、発光装置を点灯させ所望の色の発光を得
ることができる。一方、発光装置を非点灯時は、黒色系
を表示することとなる。したがって、発光時と非発光時
の差であるコントラスト比（（ＬＥＤ正面輝度＋正面反
射輝度）／正面反射輝度）が大きい表示装置とすること
でより鮮明な画像が表示可能となる。同様に、光センサ
ーに上記発光装置を利用した場合においても誤作動のよ
り少ない発光装置とすることができる。このような発光
時と非発光時の差を大きくさせるため、発光部を除くパ
ッケージの発光観測面側表面を黒色にさせる或いは、パ
ッケージに黒色系の着色剤などを含有させることによっ
てコントラスト比を稼ぐことが考えられる。しかしなが
ら、発光観測面側表面を暗色系に着色させる場合は、発
光素子が搭載されているパッケージ開口部の面積に対し
て暗色部の面積が大きくとれないためコントラスト比が
大きく改善されない。そのため発光部を除く発光面側表
面を暗色系にさせたとしてもコントラスト比が２７／１
から４４／１に改善される程度であり、十分なコントラ
スト比を稼ぐことはできない。さらに、表面のみ暗色系
に着色させたものは、視認角度によって発光素子を配置
させるパッケージ開口部内壁の側壁部が反射率が高いこ
とからコントラスト比を低下させる原因ともなる。ま
た、パッケージとなる成型樹脂など自体に暗色系の着色
を施すことにより、暗色面積比率を高くすることができ
る。しかしパッケージ開口部内壁の側壁部による反射が
ほとんど利用できない。そのため、ＬＥＤ正面輝度は白
色の成形樹脂品と比較して半分以下に低下する。暗輝度
の低下に対して正面輝度（ＬＥＤ正面輝度＋暗輝度）の
低下分が大きくなりすぎる。そのため、正面輝度が下が
るばかりでなくコントラスト比も３２／１程度となる。
何れの場合においても、ＬＥＤ正面輝度及びコントラス
ト比の高い発光装置とすることができない。したがっ
て、本願発明は、より高輝度且つコントラスト比の高い
発光装置及びそれを用いた表示装置を提供することを目
的とする。However, with such a light emitting device, a light emitting device having a high luminance and a high contrast ratio could not be obtained. Specifically, when the light emitting device is used as a display device or an optical sensor, the front luminance when the light emitting device emits light and the dark luminance when the light emitting device does not emit light (the outside luminance when the LED is not turned on) It is preferable that the difference in brightness (front reflection luminance by light) is large. That is, a display device or the like can emit light of a desired color by lighting the light emitting device. On the other hand, when the light emitting device is not lit, a black color is displayed. Therefore, a clearer image can be displayed by using a display device having a large contrast ratio ((LED front luminance + front reflection luminance) / front reflection luminance) which is a difference between light emission and non-light emission. Similarly, even when the light emitting device is used for an optical sensor, a light emitting device with less malfunction can be provided. In order to increase the difference between the time of light emission and the time of non-light emission, the contrast ratio is increased by blackening the surface on the light emission observation surface side of the package excluding the light emitting portion or by including a black colorant in the package. It is possible. However, when the light emission observation surface side surface is colored in a dark color, the contrast ratio is not significantly improved because the area of the dark color portion cannot be made larger than the area of the package opening in which the light emitting element is mounted. Therefore, the contrast ratio is 27/1 even if the light emitting surface side surface excluding the light emitting portion is made to have a dark color.
To 44/1, and a sufficient contrast ratio cannot be obtained. Further, when only the surface is colored in a dark color system, the side wall of the inner wall of the package opening on which the light emitting element is arranged has a high reflectivity depending on the viewing angle, which causes a decrease in the contrast ratio. In addition, the dark area ratio can be increased by applying a dark color to the molding resin or the like that becomes the package. However, the reflection by the side wall of the inner wall of the package opening is hardly available. Therefore, the LED front luminance is reduced to half or less as compared with the white molded resin product. The decrease in the front luminance (LED front luminance + dark luminance) is too large with respect to the decrease in dark luminance. Therefore, not only the front luminance decreases, but also the contrast ratio becomes about 32/1.
In any case, a light emitting device having a high LED front luminance and a high contrast ratio cannot be obtained. Therefore, an object of the present invention is to provide a light emitting device having higher luminance and a higher contrast ratio and a display device using the same.

【課題を解決する手段】本願発明は、パッケージ凹部内
に配された発光素子と、この凹部内に配された発光素子
上に配置されたモールド部材と、を有する発光装置であ
る。特に、モールド部材中に発光装置の暗輝度低下率よ
りもＬＥＤ輝度低下率が小さくさせる拡散剤を含有させ
てある。本願発明の請求項２記載の発光装置は、発光素
子がＲＧＢが発光可能な少なくとも３種類以上の発光素
子である。本願発明の請求項３記載の発光装置は、パッ
ケージの凹部内に配された発光素子と、発光素子を保護
するモールド部材と、を有する発光装置である。特に、
モールド部材中には拡散剤が含有されている。また、発
光素子上のモールド部材の厚みよりも発光素子からパッ
ケージ側面までの厚みの方が大きい構成とさせてある。
本願発明の請求項４記載の発光装置は、パッケージ中或
いは発光面側表面に暗色系の着色剤を有する。本願発明
の請求項５記載の表示装置は、ドットマトリクス状に配
置された表面実装型ＬＥＤと、表面実装型ＬＥＤを駆動
する駆動手段と、を有する。また、表面実装型ＬＥＤの
パッケージが暗色系であり、且つ表面実装型の発光素子
が搭載されるパッケージ凹状開口部内に拡散剤を分散し
たモールド部材で封止されている。According to the present invention, there is provided a light emitting device having a light emitting element disposed in a package concave portion and a mold member disposed on the light emitting element disposed in the concave portion. In particular, a diffusing agent is included in the mold member so that the LED luminance reduction rate is smaller than the dark luminance reduction rate of the light emitting device. In the light emitting device according to claim 2 of the present invention, the light emitting elements are at least three or more types of light emitting elements capable of emitting RGB light. A light emitting device according to a third aspect of the present invention is a light emitting device having a light emitting element disposed in a recess of a package and a mold member for protecting the light emitting element. Especially,
A diffusing agent is contained in the mold member. Further, the thickness from the light emitting element to the package side is larger than the thickness of the mold member on the light emitting element.
The light emitting device according to claim 4 of the present invention has a dark colorant in the package or on the light emitting surface side surface. A display device according to a fifth aspect of the present invention includes a surface-mounted LED arranged in a dot matrix and driving means for driving the surface-mounted LED. Further, the package of the surface mount type LED is of a dark color type, and is sealed with a mold member in which a diffusing agent is dispersed in a concave opening of the package in which the surface mount type light emitting element is mounted.

【作用】本願発明の発光装置は、発光素子から放出され
た光がパッケージ開口部内壁の側壁部などに向かうまで
に拡散剤にて拡散される。そのためパッケージ開口部内
壁の側壁部などに吸収損失されることがない。一方、発
光素子上のモールド部材は、拡散剤の量が少ないために
光の拡散吸収が抑制させれる。そのため、ＬＥＤ輝度低
下を抑制させつつ（ＬＥＤ輝度低下率を小さくさせる）
コントラスト比を向上させることができる。特に、発光
装置を構成するパッケージを黒色など暗色系に着色す
る、或いは発光装置の発光表面側を黒色に印刷などさせ
ることによって、ＬＥＤ輝度低下への影響を少なくしつ
つ著しく暗輝度を低下させることができる。In the light emitting device of the present invention, the light emitted from the light emitting element is diffused by the diffusing agent until it reaches the side wall of the inner wall of the package opening. Therefore, there is no absorption loss at the side wall of the inner wall of the package opening. On the other hand, in the mold member on the light emitting element, diffusion and absorption of light are suppressed because the amount of the diffusing agent is small. Therefore, while suppressing the LED brightness decrease (decreasing the LED brightness decrease rate)
The contrast ratio can be improved. In particular, by darkening the package constituting the light emitting device into a dark color such as black, or by printing the light emitting surface side of the light emitting device in black, etc., the dark luminance is significantly reduced while the influence on the LED luminance is reduced. Can be.

【発明の実施の形態】本願発明者は、種々の実験の結
果、拡散剤を含有させることによる暗輝度低下率とＬＥ
Ｄ輝度の低下率の違いを利用することによってよりコン
トラストが高く高輝度に発光可能な発光装置としうるこ
とを見いだし本願発明を成すに到った。即ち、通常砲弾
型などの発光ダイオードに拡散剤を含有させ拡散効果を
生じさせる場合がある。しかしながら、このような発光
ダイオードに拡散材を含有させると発光輝度が低下す
る。本願発明は、特定のモールド部材やパッケージとす
ることによって拡散材を含有させてもＬＥＤからの発光
輝度が逆に向上することを見いだした。本願発明の発光
装置は、モールド部材中に拡散剤を含有させることによ
り暗輝度低下率（ＬＥＤを点灯していないときの外光に
よる正面反射輝度の低下する割合）よりもＬＥＤ輝度低
下率（ＬＥＤの正面輝度が低下する割合）が少ない発光
装置とし発光輝度及びコントラストの高い発光装置とす
るものである。より具体的には、図２に示す如く液晶ポ
リマーなどによって形成されたパッケージ２０２凹部内
に発光素子２０３を配置させる。パッケージ２０２には
外部と電気的に接続可能な如く外部電極２０４が設けら
れている。発光素子２０３の電極と外部電極２０４と
は、それぞれ金線などの導電性ワイヤー２０５で電気的
に接続されている。また、発光素子２０３上には半導体
を外部環境から保護するために透光性のモールド部材２
０１が設けらている。特に、本願発明においては、パッ
ケージ開口部内壁による発光素子からの反射を利用する
ことよりもコントラスト比向上のためにパッケージ２０
２を構成する樹脂中にカーボンブラックを含有させ黒や
灰色などの暗色系のパッケージとさせてある。一方、モ
ールド部材中には、パッケージ開口部内壁も暗色系であ
りパッケージ開口部内壁における反射の利用が見込めな
いことを考慮して拡散剤２１１を含有させる。この拡散
剤２１１を含有させることによって図２の矢印の如くパ
ッケージ開口部内壁方向に向かう発光素子からの光を拡
散し有効利用させることによって発光輝度を向上させ
る。また、発光素子上にもモールド部材は、配置される
がパッケージ開口部内壁までの距離に対して薄いため光
の吸収散乱が少ない。そのため発光輝度の低下を抑制さ
せるものである。以下、本願発明の各構成について詳述
する。 （モールド部材１０１、２０１）本願発明のモールド部
材２０１は、各発光素子２０３やその電気的接続のため
のワイヤー等を外部力、塵芥や水分などから保護するた
めに設けられる。また、発光素子２０３からの光を有効
に取り出しつつ暗輝度を向上させるために拡散剤２１１
が含有されている。モールド部材２０１は、拡散剤２１
１を含有させることによって暗輝度低下率よりもＬＥＤ
正面輝度の低下率が小さい限り、一層で形成させても良
いし拡散剤２１１の濃度や屈折率の異なる多層構成など
所望に応じて２層以上に構成させてもよい。同様に断面
形状だけではなく発光観測面側から見て年輪の如く順次
拡散剤濃度を高くするなどした拡散濃度の異なる多層構
造とさせることもできる。このようなモールド部材２０
１の材料として具体的には、エポキシ樹脂、ユリア樹
脂、シリコン樹脂、フッ素樹脂、ポリカーボネート樹脂
などなどの耐候性に優れた樹脂の有機部材やＳｉＯ2、
Ａｌ2Ｏ3などの無機部材が好適に用いられる。温度サイ
クルの激しい使用環境下においては、モールド部材はパ
ッケージなどとの熱膨張率が近い方がより好ましい。ま
た、発光装置を構成するモールド部材２０１には、拡散
剤２１１を含有させることによって暗輝度低下率よりも
ＬＥＤ正面輝度低下率が小さい限り、所望に応じて着色
剤、光安定化剤や蛍光物質など種々の添加剤などを含有
させることもできる。これにより発光素子２０３からの
発光ピークを調節させたり指向性を緩和させ視野角を増
やすこともできる。また、所望の発光波長を有する発光
装置とすることもできる。さらに野外の使用においても
より耐候性を有する発光装置とすることができる。着色
剤としては、モールド部材２０１に含有され発光素子２
０３が発光した光のうち所望外の波長をカットして発光
特性を向上させるフィルター効果を持たせるためのもの
である。したがって、発光装置の発光色（発光の主ピー
クである主発光波長）などに応じて種々の染料及び／又
は顔料が種々選択される。発光素子２０３から放出され
る光は単色性ピーク波長を持つため蛍光物質などとの組
み合わせにより白色系を表示させた発光装置を形成させ
ることもできる。この場合、発光波長のエネルギーが大
きい青色系の窒化ガリウム系化合物半導体と、セリウム
で付加されたイットリム・アルミニウム酸化物系蛍光物
質やペリレン系誘導体である蛍光物質などを用いること
によって効率よく高輝度に発光させることができる。ま
た、本願発明に用いられる拡散剤に加えて、含有可能な
着色剤、光安定化部材、蛍光物質などは、所望に応じて
モールド部材中に種々の割合で分散させて形成させても
良い。すなわち、発光素子に近づくにつれ含有濃度を増
やしたり或いは減少させたり種々選択することができ
る。 （拡散剤２１１）モールド部材２０１に含有される拡散
剤２１１は、発光素子２０３から放出される光のうち発
光観測面側に放出される光の散乱吸収を少なくし、パッ
ケージ内開口部内壁側に向かう光を多く散乱させること
で発光装置の発光輝度を向上させるものである。また、
拡散剤２１１の含有量によって発光素子２０３が配置さ
れたパッケージ開口部の暗輝度をも調整させることがで
きる。このような拡散剤２１１としては、チタン酸バリ
ウム、酸化チタン、酸化アルミニウム、酸化珪素等の無
機部材やメラミン樹脂、ＣＴＵグアナミン樹脂、ベンゾ
グアナミン樹脂などの有機部材が好適に用いられる。本
願発明の効果を示すために、暗色系としてカーブラック
により黒色に着色したパッケージ内に配置されたモール
ド部材２０１として有機部材であるベンゾグアナミン樹
脂を用いた拡散剤濃度との関係を図４に示す。図４から
拡散剤の分散濃度が増加すれば、発光装置の正面輝度は
増加する。これは、発光素子から放出される光が発光観
測正面方向のみならずパッケージ開口部内壁方向に多く
向かうことから側壁で吸収されていた損失光が、拡散材
の散乱などにより前面に導かれたためと考えられる。ま
た、拡散剤濃度が過多になれば、逆に正面輝度は下がり
始める。これは、発光素子であるＬＥＤチップからの直
接光を散乱する割合が増加し正面輝度の増加は頭打ちに
なるためと考えられる。また、拡散剤濃度が増加するに
したがい、外光の進入が散乱反射され暗輝度を低下させ
る効果も付与されると考えられる。なお、他の無機材料
などにおいてもほぼ同様の傾向が得られることを確認し
てある。特に、屋内または屋外にてＬＥＤディスプレイ
を見る場合、太陽光などのさまざまな外光が進入する可
能性があるため、ＬＥＤディスプレイの暗輝度を十分に
下げコントラスト比が５０以上とさせなければ外光反射
により視認性が極端に低下する。そのため、拡散剤の濃
度は材料などにもよるが拡散剤の分散濃度として３〜１
２％が好ましい。これにより正面輝度の増加は最適化さ
れる。また拡散剤により外光進入も直接パッケージ底面
に設けられた外部電極等へ達することなく、或いは外部
電極などへ達しても外部に反射散乱することを抑制する
ことができる。そのため、暗輝度の低下傾向も強めるこ
とができる。これにより、コントラスト比を５０以上に
最適化することができる。また、球形状のポリマーなど
は、０．１〜２０μｍが好適に利用することができる
が、小さすぎれば分散性が悪く、大きすぎれば沈降しや
す過ぎるため１〜５μｍがより好ましい。この拡散剤濃
度は、通常砲弾型発光ダイオードに使用される拡散濃度
に比べて１桁以上多い濃度となっている。発光観測面側
のモールド部材の厚みを薄くさせているために１桁以上
多く含有させてもＬＥＤの正面輝度低下は少なくてす
む。 （パッケージ１０２、２０２）パッケージ２０２は、発
光素子２０３を凹部内に固定保護するとともに外部との
電気的接続が可能な外部電極２０４を有するものであ
る。したがって、発光素子２０３の数や大きさに合わせ
て複数の開口部を持ったパッケージ２０２とすることも
できる。また、好適には遮光機能を持たせるために黒や
灰色などの暗色系に着色させる、或いはパッケージの発
光観測表面側が暗色系に着色されている。パッケージ２
０２は発光素子２０３をさらに外部環境から保護するた
めに透光性保護体であるモールド部材２０１を設ける。
パッケージ２０２は、モールド部材２０１との接着性が
よくモールド部材よりも剛性の高いものが好ましい。モ
ールド部材２０１との接着性を向上させ熱膨張時にモー
ルド部材２０１から働く力を外部に向かわせるために
は、筒状部を外部に向けて広がる摺鉢形状とすることが
好ましい。また、発光素子２０３と外部とを電気的に遮
断させるために絶縁性を有することが望まれる。さら
に、パッケージ２０２は、発光素子２０３などからの熱
の影響をうけた場合、モールド部材２０１との密着性を
考慮して熱膨張率の小さい物が好ましい。パッケージ２
０２の凹部内表面は、エンボス加工させて接着面積を増
やしたり、プラズマ処理してモールド部材２０１との密
着性を向上させることもできる。パッケージ２０２は、
外部電極２０４と一体的に形成させてもよく、パッケー
ジ２０２が複数に分かれ、はめ込みなどにより組み合わ
せて構成させてもよい。このようなパッケージ２０２
は、インサート成形などにより比較的簡単に形成するこ
とができる。このようなパッケージ材料としてポリカー
ボネート樹脂、ポリフェニレンサルファイド（ＰＰ
Ｓ）、液晶ポリマー（ＬＣＰ）、ＡＢＳ樹脂、エポキシ
樹脂、フェノール樹脂、アクリル樹脂、ＰＢＴ樹脂等の
樹脂やセラミックなどを用いることができる。また、パ
ッケージ２０２を暗色系に着色させる着色剤としては種
々の染料や顔料が好適に用いられる。具体的には、Ｃｒ
2Ｏ3、ＭｎＯ2、Ｆｅ2Ｏ3やカーボンブラックなどが好
適に挙げられる。発光素子２０３とパッケージ２０２と
の接着は熱硬化性樹脂などによって行うことができる。
具体的には、エポキシ樹脂、アクリル樹脂やイミド樹脂
などが挙げられる。また、発光素子２０３を配置固定さ
せると共にパッケージ２０２内の外部電極２０４と電気
的に接続させるためにはＡｇペースト、カーボンペース
ト、金属バンプ等を用いることができる。 （外部電極１０４、２０４）外部電極２０４は、パッケ
ージ２０２外部からの電力を内部に配置された発光素子
２０３に供給させるために用いられるためのものであ
る。そのためパッケージ上に設けられた導電性を有する
パターンやリードフレームを利用したものなど種々のも
のが挙げられる。また、外部電極２０４は放熱性、電気
伝導性、発光素子２０３の特性などを考慮して種々の大
きさに形成させることができる。外部電極２０４は、各
発光素子２０３を配置すると共に発光素子２０３から放
出された熱を外部に放熱させるため熱伝導性がよいこと
が好ましい。外部電極２０４の具体的な電気抵抗として
は３００μΩ・ｃｍ以下が好ましく、より好ましくは、
３μΩ・ｃｍ以下である。また、具体的な熱伝導度は、
０．０１ｃａｌ／ｃｍ2／ｃｍ／℃以上が好ましく、よ
り好ましくは ０．５ｃａｌ／ｃｍ2／ｃｍ／℃以上であ
る。このような外部電極２０４としては、銅やりん青銅
板表面に銀、パラジュウム或いは金などの金属メッキや
半田メッキなどを施したものが好適に用いられる。外部
電極２０４としてリードフレームを利用した場合は、電
気伝導度、熱伝導度によって種々利用できるが加工性の
観点から板厚０．１ｍｍから２ｍｍが好ましい。ガラス
エポキシ樹脂やセラミックなどの基板上などに設けられ
た外部電極２０４としては、銅箔やタングステン層を形
成させることができる。プリント基板上に金属箔を用い
る場合は、銅箔などの厚みとして１８〜７０μｍとする
ことが好ましい。また、銅箔等の上に金、半田メッキな
どを施しても良い。 （発光素子１１３、１２３、１３３、２０３）本願発明
に用いられる発光素子２０３としては、液相成長法やＭ
ＯＣＶＤ法等により基板上にＩｎＮ、ＡｌＮ、ＧａＮ、
ＺｎＳ、ＺｎＳｅ、ＳｉＣ、ＧａＰ、ＧａＡｓ、ＧａＡ
ｌＡｓ、ＧａＡｌＮ、ＡｌＩｎＧａＰ、ＩｎＧａＮ、Ａ
ｌＩｎＧａＮ等の半導体を発光層として形成させたもの
が好適に用いられる。半導体の構造としては、ＭＩＳ接
合、ＰＩＮ接合やＰＮ接合を有したホモ構造、ヘテロ構
造あるいはダブルへテロ構成のものが挙げられる。半導
体層の材料やその混晶度によって発光波長を紫外光から
赤外光まで種々選択することができる。さらに、量子効
果を持たせるため発光層を単一量子井戸構造、多重量子
井戸構造とさせても良い。こうしてできた半導体に真空
蒸着法や熱、光、放電エネルギーなどを利用した各種Ｃ
ＶＤ法などを用いて所望の電極を形成させる。発光素子
２０４の電極は、半導体の一方の側に設けてもよいし、
両面側にそれぞれ設けてもよい。電極が形成された半導
体ウエハーをダイヤモンド製の刃先を有するブレードが
回転するダイシングソーにより直接フルカットするか、
または刃先幅よりも広い幅の溝を切り込んだ後（ハーフ
カット）、外力によって半導体ウエハーを割る。あるい
は、先端のダイヤモンド針が往復直線運動するスクライ
バーにより半導体ウエハーに極めて細いスクライブライ
ン（経線）を例えば碁盤目状に引いた後、外力によって
ウエハーを割り半導体ウエハーからチップ状にカットさ
せるなどして発光素子であるＬＥＤチップを形成させる
ことができる。発光装置をフルカラー発光させるために
は、ＲＧＢの発光色を発光するＬＥＤチップを用いるこ
とができる。特に、野外などの使用を考慮する場合、高
輝度な半導体材料として緑色及び青色を窒化ガリウム系
化合物半導体を用いることが好ましく、また、赤色では
ガリウム・アルミニウム・砒素系やアルミニウム・イン
ジュウム・ガリウム・燐系の半導体を用いることが好ま
しいが、用途によって種々利用できる。なお、フルカラ
ー発光可能な発光装置として、ＲＧＢがそれぞれ発光可
能な発光素子を利用するためには赤色系の発光波長が６
００ｎｍから７００ｎｍ、緑色系が４９５ｎｍから５６
５ｎｍ、青色系の発光波長が４００ｎｍから４９０ｎｍ
の半導体を用いたＬＥＤチップを使用することが好まし
い。 （電気的接続部材１０５、２０５）電気的接続部材２０
５としては、発光素子２０３の電極とのオーミック性、
機械的接続性、電気伝導性及び熱伝導性がよいものが求
められる。導電性ワイヤーを用いた場合、熱伝導度とし
ては０．０１ｃａｌ／ｃｍ2／ｃｍ／℃以上が好まし
く、より好ましくは０．５ｃａｌ／ｃｍ2／ｃｍ／℃以
上である。また、作業性などを考慮して導電性ワイヤー
の直径は、好ましくは、Φ１０μｍ以上、Φ４５μｍ以
下である。このような導電性ワイヤーとして具体的に
は、金、銅、白金、アルミニウム等の金属及びそれらの
合金を用いた導電性ワイヤーが挙げられる。このような
導電性ワイヤーは、各発光素子２０３の電極と、外部電
極２０４などと、をワイヤーボンディング機器によって
容易に接続させることができる。また、導電性ペースト
を用いた場合、導電性を有するＣ、ＩＴＯ、ＺｎＯ、Ａ
ｇ、金属バンプなどをエポキシ樹脂など所望の樹脂中に
含有させることによって利用することができる。このよ
うな導電性ペーストを利用することによって電気的導通
ばかりでなく発光素子２０３の固定をもさせることがで
きる。 （基板）基板としては、各発光装置をマトリックス状な
ど所望形状に配置すると共に電気的に接続させるために
好適に用いられる。このような基板は、発光装置の配置
のみならず駆動回路用の基板と兼用しても良い。したが
って基板は、機械的強度が高く熱変形の少ないものが好
ましい。具体的にはタングステン層などの導電性パター
ンが形成されたセラミックス、銅箔などの導電性パター
ンが形成された硝子エポキシ樹脂や表面に絶縁層を有す
る金属又は合金などが好適に利用できる。発光装置が実
装される基板表面はＬＥＤ表示器の表示面と一致するた
めコントラスト向上のために暗褐色や黒色などに着色さ
せてもよい。以下、本願発明の具体的実施例について詳
述するが、本願発明はこれのみに限定されるものではな
いことは言うまでもない。BEST MODE FOR CARRYING OUT THE INVENTION As a result of various experiments, the inventor of the present invention has found that the rate of decrease in dark luminance and the LE
D It has been found that a light emitting device capable of emitting light with higher contrast and higher luminance can be obtained by utilizing the difference in the rate of decrease in the luminance, and the present invention has been accomplished. That is, a light emitting diode such as a normal shell type may contain a diffusing agent to cause a diffusion effect. However, when such a light emitting diode contains a diffusing material, the light emission luminance is reduced. The present invention has found that, even when a specific mold member or package is used, even if a diffusing material is contained, the light emission luminance from the LED is improved. The light emitting device of the present invention has a lowering ratio of the LED brightness (the ratio of the reduction of the front reflection brightness due to external light when the LED is not lit) by including a diffusing agent in the mold member. (A decrease in the front luminance of the light-emitting device) is low, and the light-emitting device has high light-emitting luminance and high contrast. More specifically, as shown in FIG. 2, the light emitting element 203 is arranged in a concave portion of the package 202 formed of a liquid crystal polymer or the like. The package 202 is provided with an external electrode 204 so as to be electrically connectable to the outside. The electrode of the light emitting element 203 and the external electrode 204 are electrically connected to each other by a conductive wire 205 such as a gold wire. A light-transmitting mold member 2 is provided on the light emitting element 203 to protect the semiconductor from the external environment.
01 is provided. In particular, in the present invention, the package 20 is used to improve the contrast ratio rather than utilizing the reflection from the light emitting element by the inner wall of the package opening.
Carbon black is contained in the resin that constitutes No. 2 to form a dark color package such as black or gray. On the other hand, in the mold member, the diffusing agent 211 is contained in consideration of the fact that the inner wall of the package opening is also of a dark color and the use of reflection at the inner wall of the package opening cannot be expected. Inclusion of the diffusing agent 211 diffuses light from the light emitting element toward the inner wall of the package opening as shown by an arrow in FIG. The mold member is also arranged on the light emitting element, but the absorption and scattering of light is small since the mold member is thin with respect to the distance to the inner wall of the package opening. Therefore, a decrease in light emission luminance is suppressed. Hereinafter, each configuration of the present invention will be described in detail. (Mold member 101, 201) The mold member 201 of the present invention is provided to protect each light emitting element 203 and wires for electrical connection thereof from external force, dust, moisture, and the like. Further, in order to effectively extract light from the light emitting element 203 and improve dark luminance, the diffusing agent 211 is used.
Is contained. The mold member 201 is made of the diffusing agent 21
LED is better than dark luminance reduction rate by containing 1
As long as the decrease rate of the front luminance is small, it may be formed as a single layer, or may be formed as two or more layers as desired, such as a multilayer structure having different concentrations of the diffusing agent 211 and different refractive indexes. Similarly, not only the cross-sectional shape but also a multilayer structure having different diffusion densities such as increasing the concentration of the diffusing agent sequentially like an annual ring when viewed from the emission observation surface side can be used. Such a mold member 20
Specific examples 1 material, epoxy resin, urea resin, silicone resin, fluorine resin, a resin having excellent weather resistance such as polycarbonate resin organic member or SiO 2,
An inorganic member such as Al 2 O 3 is preferably used. In a use environment where the temperature cycle is severe, it is more preferable that the mold member has a coefficient of thermal expansion close to that of a package or the like. In addition, as long as the LED front luminance reduction rate is smaller than the dark luminance reduction rate by including the diffusing agent 211 in the mold member 201 constituting the light emitting device, a coloring agent, a light stabilizer, And various other additives. This makes it possible to adjust the light emission peak from the light emitting element 203 or relax the directivity to increase the viewing angle. Further, a light emitting device having a desired emission wavelength can be obtained. Further, a light-emitting device having more weather resistance even in outdoor use can be provided. As a coloring agent, the light emitting element 2 contained in the mold member 201
Reference numeral 03 denotes a filter for cutting out an undesired wavelength from the emitted light to have a filter effect of improving the emission characteristics. Therefore, various dyes and / or pigments are variously selected according to the emission color of the light emitting device (main emission wavelength, which is the main emission peak). Since light emitted from the light-emitting element 203 has a monochromatic peak wavelength, a light-emitting device which displays white light can be formed in combination with a fluorescent substance or the like. In this case, the use of a blue gallium nitride-based compound semiconductor having a large emission wavelength energy and a yttrium / aluminum oxide-based fluorescent material added with cerium or a fluorescent material that is a perylene-based derivative can efficiently achieve high luminance. It can emit light. Further, in addition to the diffusing agent used in the present invention, a coloring agent, a light stabilizing member, a fluorescent substance, and the like that can be contained may be dispersed in various ratios in the mold member as required. That is, the concentration can be increased or decreased as the element approaches the light emitting element, and various choices can be made. (Diffusing agent 211) The diffusing agent 211 contained in the mold member 201 reduces scattering and absorption of light emitted from the light emitting element 203 to the emission observation surface side, and reduces the scattering and absorption of light emitted to the light emission observation surface side. By scattering a lot of incoming light, the light emission luminance of the light emitting device is improved. Also,
The dark luminance of the package opening where the light emitting element 203 is arranged can also be adjusted by the content of the diffusing agent 211. As such a diffusing agent 211, an inorganic member such as barium titanate, titanium oxide, aluminum oxide, or silicon oxide, or an organic member such as melamine resin, CTU guanamine resin, or benzoguanamine resin is preferably used. In order to show the effect of the present invention, FIG. 4 shows the relationship with the concentration of a diffusing agent using a benzoguanamine resin which is an organic member as the mold member 201 disposed in a package colored black with car black as a dark color. As shown in FIG. 4, when the dispersion concentration of the diffusing agent increases, the front luminance of the light emitting device increases. This is because the light emitted from the light emitting element travels not only in the front direction of the emission observation but also in the direction of the inner wall of the package opening, so that the loss light absorbed by the side wall is led to the front surface by scattering of the diffusion material. Conceivable. On the other hand, if the concentration of the diffusing agent becomes excessive, the front luminance starts to decrease. It is considered that this is because the rate of scattering the direct light from the LED chip, which is the light emitting element, increases, and the increase in the frontal luminance levels off. It is also considered that as the concentration of the diffusing agent increases, an effect of reducing the dark luminance by scattering and reflecting the entrance of the external light is provided. It has been confirmed that almost the same tendency can be obtained in other inorganic materials. In particular, when viewing an LED display indoors or outdoors, there is a possibility that various external lights such as sunlight may enter. Therefore, if the brightness of the LED display is not sufficiently reduced and the contrast ratio is set to 50 or more, the external light may be reduced. The visibility is extremely reduced due to reflection. Therefore, the concentration of the diffusing agent depends on the material and the like, but the dispersion concentration of the diffusing agent is 3 to 1
2% is preferred. Thereby, the increase of the front luminance is optimized. In addition, the diffusion agent prevents external light from directly reaching the external electrodes and the like provided on the bottom surface of the package, or preventing external light from being reflected and scattered even when reaching the external electrodes and the like. Therefore, the tendency of the dark luminance to decrease can be enhanced. Thereby, the contrast ratio can be optimized to 50 or more. Further, for a spherical polymer or the like, 0.1 to 20 μm can be suitably used, but if it is too small, dispersibility is poor, and if it is too large, sedimentation is too easy, so 1 to 5 μm is more preferable. This diffusing agent concentration is a concentration that is at least one order of magnitude higher than the diffusing concentration usually used for shell-type light emitting diodes. Since the thickness of the mold member on the light emission observation surface side is reduced, the front luminance of the LED can be reduced even if it is contained by one or more digits. (Packages 102 and 202) The package 202 has an external electrode 204 that fixes and protects the light emitting element 203 in the concave portion and that can be electrically connected to the outside. Therefore, a package 202 having a plurality of openings in accordance with the number and size of the light emitting elements 203 can be provided. Preferably, the package is colored in a dark color such as black or gray to have a light-shielding function, or the light emission observation surface side of the package is colored in a dark color. Package 2
02 is provided with a mold member 201 which is a light-transmitting protective body in order to further protect the light emitting element 203 from an external environment.
The package 202 preferably has good adhesiveness to the mold member 201 and has higher rigidity than the mold member. In order to improve the adhesiveness with the mold member 201 and direct the force exerted by the mold member 201 during thermal expansion to the outside, it is preferable that the cylindrical portion has a mortar shape that spreads outward. In addition, it is desired that the light-emitting element 203 has an insulating property in order to electrically disconnect the light-emitting element 203 from the outside. Further, when the package 202 is affected by heat from the light emitting element 203 and the like, it is preferable that the package 202 has a small coefficient of thermal expansion in consideration of adhesion to the mold member 201. Package 2
The inner surface of the concave portion of 02 can be embossed to increase the bonding area, or can be subjected to plasma treatment to improve the adhesion to the mold member 201. Package 202
The package 202 may be formed integrally with the external electrode 204, or may be divided into a plurality of parts and combined with each other by fitting or the like. Such a package 202
Can be formed relatively easily by insert molding or the like. As such package materials, polycarbonate resin, polyphenylene sulfide (PP)
S), a liquid crystal polymer (LCP), an ABS resin, an epoxy resin, a phenol resin, an acrylic resin, a resin such as a PBT resin, a ceramic, or the like can be used. Various dyes and pigments are preferably used as a coloring agent for coloring the package 202 in a dark color system. Specifically, Cr
Preferable examples include 2 O 3 , MnO 2 , Fe 2 O 3 and carbon black. The light emitting element 203 and the package 202 can be bonded to each other with a thermosetting resin or the like.
Specifically, an epoxy resin, an acrylic resin, an imide resin, and the like can be given. In addition, an Ag paste, a carbon paste, a metal bump, or the like can be used to arrange and fix the light emitting element 203 and electrically connect the light emitting element 203 to the external electrode 204 in the package 202. (External Electrodes 104 and 204) The external electrodes 204 are used to supply electric power from outside the package 202 to the light emitting element 203 disposed inside. Therefore, there are various types such as a conductive pattern provided on a package and a type using a lead frame. Further, the external electrode 204 can be formed in various sizes in consideration of heat dissipation, electric conductivity, characteristics of the light emitting element 203, and the like. The external electrode 204 preferably has good thermal conductivity in order to dispose the light emitting elements 203 and to radiate the heat emitted from the light emitting elements 203 to the outside. The specific electric resistance of the external electrode 204 is preferably 300 μΩ · cm or less, more preferably,
It is 3 μΩ · cm or less. The specific thermal conductivity is
It is preferably at least 0.01 cal / cm 2 / cm / ° C., more preferably at least 0.5 cal / cm 2 / cm / ° C. As such an external electrode 204, a copper or phosphor bronze plate whose surface is subjected to metal plating such as silver, palladium or gold, or solder plating is preferably used. When a lead frame is used as the external electrode 204, it can be variously used depending on electric conductivity and heat conductivity, but from the viewpoint of workability, the plate thickness is preferably 0.1 mm to 2 mm. A copper foil or a tungsten layer can be formed as the external electrode 204 provided on a substrate made of glass epoxy resin, ceramic, or the like. When a metal foil is used on a printed board, the thickness of the copper foil or the like is preferably 18 to 70 μm. Further, gold, solder plating, or the like may be applied on copper foil or the like. (Light-Emitting Elements 113, 123, 133, and 203) As the light-emitting element 203 used in the present invention, a liquid phase growth method or M
InN, AlN, GaN,
ZnS, ZnSe, SiC, GaP, GaAs, GaAs
lAs, GaAlN, AlInGaP, InGaN, A
A light emitting layer formed of a semiconductor such as lInGaN is preferably used. Examples of the semiconductor structure include a homostructure having a MIS junction, a PIN junction, and a PN junction, a heterostructure, and a double heterostructure. The emission wavelength can be variously selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and the degree of mixed crystal thereof. Further, the light emitting layer may have a single quantum well structure or a multiple quantum well structure in order to have a quantum effect. Various types of C using the vacuum evaporation method, heat, light, discharge energy, etc.
A desired electrode is formed by using a VD method or the like. The electrode of the light-emitting element 204 may be provided on one side of the semiconductor,
It may be provided on each side. The semiconductor wafer on which the electrodes are formed is directly full-cut by a dicing saw with a rotating blade having a diamond blade, or
Alternatively, after cutting a groove having a width wider than the blade edge width (half cut), the semiconductor wafer is cracked by an external force. Alternatively, an extremely thin scribe line (meridian) is drawn on the semiconductor wafer, for example, in a checkerboard pattern by a scriber in which a diamond needle at the tip reciprocates linearly, and then the wafer is split by an external force to cut the semiconductor wafer into chips. An LED chip as an element can be formed. In order for the light-emitting device to emit full-color light, an LED chip that emits RGB light can be used. In particular, when the use in the field is considered, it is preferable to use a gallium nitride compound semiconductor for green and blue as the semiconductor material with high brightness, and to use gallium aluminum arsenide or aluminum indium gallium phosphorus for red. Although it is preferable to use a system semiconductor, various semiconductors can be used depending on the application. In order to use a light emitting element capable of emitting light of each of RGB as a light emitting device capable of full color light emission, a red light emission wavelength of 6 is required.
00 nm to 700 nm, green color is 495 nm to 56
5 nm, blue light emission wavelength from 400 nm to 490 nm
It is preferable to use an LED chip using a semiconductor. (Electrical Connection Members 105 and 205) Electrical Connection Member 20
5 is ohmic with the electrode of the light emitting element 203;
Good mechanical connectivity, electrical conductivity and thermal conductivity are required. When a conductive wire is used, the thermal conductivity is preferably at least 0.01 cal / cm 2 / cm / ° C., more preferably at least 0.5 cal / cm 2 / cm / ° C. In addition, the diameter of the conductive wire is preferably Φ10 μm or more and Φ45 μm or less in consideration of workability and the like. Specific examples of such conductive wires include conductive wires using metals such as gold, copper, platinum, and aluminum and alloys thereof. Such a conductive wire can easily connect the electrode of each light emitting element 203 to the external electrode 204 or the like by a wire bonding device. When a conductive paste is used, conductive C, ITO, ZnO, A
g, metal bumps and the like can be used by being contained in a desired resin such as an epoxy resin. By using such a conductive paste, not only electrical conduction but also fixing of the light emitting element 203 can be achieved. (Substrate) The substrate is suitably used for arranging the respective light emitting devices in a desired shape such as a matrix and electrically connecting them. Such a substrate may be used not only for disposing the light emitting device but also as a substrate for a driving circuit. Therefore, it is preferable that the substrate has high mechanical strength and low thermal deformation. Specifically, ceramics on which a conductive pattern such as a tungsten layer is formed, glass epoxy resin on which a conductive pattern such as copper foil is formed, a metal or alloy having an insulating layer on the surface, and the like can be suitably used. Since the surface of the substrate on which the light emitting device is mounted coincides with the display surface of the LED display, it may be colored dark brown or black to improve the contrast. Hereinafter, specific examples of the present invention will be described in detail, but it goes without saying that the present invention is not limited thereto.

【実施例】【Example】

（実施例１〜５）０．１ｍｍ厚のりんせい銅をプレス加
工し外部電極として使用する。この外部電極を、液晶ポ
リマ−樹脂にて成型加工行う。この液晶ポリマ−樹脂の
原材料は乳白色であるが、カ−ボンブラックを０．４％
混入し黒色に着色している。こうして形成されたパッケ
ージ１０２は、厚さ１ｍｍであり、１辺が３ｍｍ角であ
る。また、発光素子が配置される凹部の開口部（直径
２．６ｍｍ）を持っている。外部電極１０４となるリ−
ドフレ−ム上にＲＧＢ（赤色系、緑色系、青色系）がそ
れぞれ発光可能な発光素子としてＬＥＤベアチップ１１
３、１２３、１３３を搭載した。ＢＧが発光可能な発光
素子１１３、１２３は、発光層に窒化ガリウム系半導体
を利用したものを用いた。Ｒが発光可能な発光素子１３
３は、ガリウム・インジュウム・アルミニウム・燐系半
導体を利用したものを用いてある。各発光素子は、Ａｇ
ペーストを用いて固定させた。Ｒが発光可能な発光素子
１３３は、固定と共に電気的に接続もされている。ＢＧ
が発光可能な発光素子１１３、１２３は、活性層がサフ
ァイア基板上に形成されているために同一表面側から金
ワイヤ−１０５にて外部電極とワイヤーボンディングさ
せそれぞれ電気的に接続し図１の如き構成とさせた。次
に、パッケージ開口部内にエポキシで封止硬化しモール
ド部材２０１を形成させた。エポキシ樹脂中に球状ポリ
マ−（ベンゾグアナミン樹脂、平均球径が約２μｍ）を
拡散剤として、重量比９％で分散混合させてある。同様
に重量比のみ代えて１、３、６、１２％で分散混合させ
たものもそれぞれ実施例２、３、４、５用として形成さ
せた。各モールド部材２０１は各発光素子の端部からパ
ッケージ開口の側壁部までが約１ｍｍであり、発光素子
上は約０．２ｍｍの厚みがあった。このような発光装置
の発光特性として輝度及びコントラスト比をトプコン社
製（ＢＭ−７）によって調べた。ＲＧＢを全て点灯させ
白色光とさせたときの正面輝度は、８２３ｃｄ／ｍ2で
あり、暗輝度は、１０ｃｄ／ｍ2であった。なお、暗輝
度は照度計を発光装置と平行に配置させ外部から４００
ルックスの光を照射して測定してある。このときの、コ
ントラスト比は８２：１である。このようにして形成さ
れたＲＧＢが発光可能な発光装置を、半田クリ−ムを印
刷したプリント基板上にチップマウンタ−で表面実装し
た。これを半田リフロ−炉で半田接合を行い各発光装置
と基板とを電気的に接続させた。こうして、図３の如
き、４ｍｍドットピッチで発光装置を１６×３２個ドッ
トマトリックス状に配置されたＬＥＤ表示器を構成する
ことができる。発光装置が配置され電気的に接続された
基板と、ＬＥＤ表示器を駆動させる駆動回路とを電気的
に接続させることによりフルカラー表示装置を構成させ
ることができる。 （比較例１）モールド部材形成時に拡散剤を入れない他
は実施例と同様にして発光装置を形成させた。また、同
様に発光装置のＬＥＤ輝度及び暗輝度を測定した。 （比較例２）モールド部材形成時に拡散剤及び着色剤を
入れない以外は実施例と同様にして発光装置を形成させ
た。また、同様に発光装置のＬＥＤ輝度及び暗輝度を測
定した。 （比較例３）モールド部材形成時に拡散剤及び着色剤を
入れない以外は実施例と同様にして発光装置を形成させ
た。また、同様に発光装置のＬＥＤ輝度及び暗輝度を測
定した。これら比較例１〜３の発光装置と、実施例１〜
５の発光装置とをそれぞれ比較した結果を表１に示す。
表１から実施例１は比較例１の約１．５倍以上の正面輝
度が得られた。また、実施例１は比較例１のコントラス
ト比が３８：１に対して８２：１と極めて高くさせるこ
とができた。(Examples 1 to 5) 0.1 mm-thick phosphor copper is pressed and used as an external electrode. This external electrode is molded with a liquid crystal polymer resin. The raw material of this liquid crystal polymer resin is milky white, but carbon black is 0.4%.
It is mixed and colored black. The package 102 thus formed has a thickness of 1 mm and a side of 3 mm square. Further, it has an opening (diameter 2.6 mm) of a concave portion in which the light emitting element is arranged. Reel to be external electrode 104
An LED bare chip 11 as a light-emitting element capable of emitting RGB (red, green, and blue) light on the frame, respectively.
3, 123 and 133 were mounted. The light-emitting elements 113 and 123 capable of emitting BG used gallium nitride-based semiconductors for the light-emitting layers. Light emitting element 13 capable of emitting R light
No. 3 uses a gallium-indium-aluminum-phosphorus-based semiconductor. Each light emitting element is Ag
It was fixed using paste. The light emitting element 133 capable of emitting R light is fixed and electrically connected. BG
Since the active layers are formed on the sapphire substrate, the light emitting elements 113 and 123 which can emit light are wire-bonded to the external electrodes with gold wires 105 from the same surface side to be electrically connected to each other as shown in FIG. Configuration. Next, the inside of the package opening was sealed and cured with epoxy to form a mold member 201. A spherical polymer (benzoguanamine resin, average sphere diameter of about 2 μm) is dispersed and mixed at a weight ratio of 9% in an epoxy resin. Similarly, those obtained by dispersing and mixing at 1, 3, 6, and 12% instead of the weight ratio were also formed for Examples 2, 3, 4, and 5, respectively. Each mold member 201 had a thickness of about 1 mm from the end of each light emitting element to the side wall of the package opening, and had a thickness of about 0.2 mm on the light emitting element. As light emission characteristics of such a light emitting device, a luminance and a contrast ratio were examined by Topcon Corporation (BM-7). The front luminance when all the RGB lights were turned on and the white light was emitted was 823 cd / m 2 , and the dark luminance was 10 cd / m 2 . Note that the dark luminance was measured by placing an illuminometer parallel to the
Measured by irradiating looks light. At this time, the contrast ratio is 82: 1. The light emitting device capable of emitting RGB light thus formed was surface-mounted on a printed circuit board on which a solder cream was printed by a chip mounter. This was soldered in a solder reflow furnace to electrically connect each light emitting device to the substrate. Thus, as shown in FIG. 3, an LED display in which 16 × 32 light emitting devices are arranged in a dot matrix at a 4 mm dot pitch can be formed. A full-color display device can be formed by electrically connecting a substrate on which the light-emitting device is provided and electrically connected to a driving circuit for driving the LED display. (Comparative Example 1) A light emitting device was formed in the same manner as in Example except that no diffusing agent was added when forming the mold member. Similarly, the LED luminance and the dark luminance of the light emitting device were measured. (Comparative Example 2) A light emitting device was formed in the same manner as in Example except that the diffusing agent and the coloring agent were not added when forming the mold member. Similarly, the LED luminance and the dark luminance of the light emitting device were measured. (Comparative Example 3) A light emitting device was formed in the same manner as in the example except that the diffusing agent and the coloring agent were not added when forming the mold member. Similarly, the LED luminance and the dark luminance of the light emitting device were measured. These light emitting devices of Comparative Examples 1 to 3, and Examples 1 to
Table 1 shows the results of comparison with the light-emitting devices of No. 5 and No. 5, respectively.
From Table 1, it was found that Example 1 had about 1.5 times or more the front luminance of Comparative Example 1. In Example 1, the contrast ratio of Comparative Example 1 was as high as 82: 1 compared to 38: 1.

【発明の効果】本願発明の構成とすることによって、視
認性の良い表示装置を構成させることや誤差動がより少
ない光センサーなどを構成させることができる。特に、
拡散剤を含有させてもＬＥＤ輝度を向上させることがで
きる。また、コントラスト比を向上させることができ
る。According to the configuration of the present invention, it is possible to configure a display device with good visibility and to configure an optical sensor with less error movement. Especially,
Even if a diffusing agent is contained, the brightness of the LED can be improved. Further, the contrast ratio can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】図１は、本願発明の発光装置の模式的平面図で
ある。FIG. 1 is a schematic plan view of a light emitting device according to the present invention.

【図２】図２は、本願発明の発光装置の作用を示す模式
的断面図である。FIG. 2 is a schematic sectional view showing the operation of the light emitting device of the present invention.

【図３】図３は、本願発明の発光装置を利用した表示装
置を示した模式図である。FIG. 3 is a schematic view showing a display device using the light emitting device of the present invention.

【図４】図４は、拡散剤濃度と正面輝度との関係を表す
図である。FIG. 4 is a diagram illustrating a relationship between a diffusing agent concentration and a front luminance.

【図５】図５は、本願発明と比較のために示す発光装置
の模式的断面図である。FIG. 5 is a schematic sectional view of a light emitting device shown for comparison with the present invention.

【符号の説明】[Explanation of symbols]

１０１・・・拡散材が含有されたモールド部材 １０２・・・パッケージ １１３、１２３、１３３・・・発光素子 １０４・・・外部電極 １０５・・・導電性ワイヤー ２０１・・・モールド部材 ２０２・・・パッケージ ２１１・・・拡散材 ２０３・・・発光素子 ２０４・・・外部電極 ２０５・・・電気的接続部材 ５０１・・・モールド部材 ５０２・・・パッケージ ５０３・・・発光素子 ５０４・・・外部電極 ５０５・・・電気的接続部材 101: Mold member containing diffusion material 102: Package 113, 123, 133: Light emitting element 104: External electrode 105: Conductive wire 201: Mold member 202: Package 211: Diffusing material 203: Light emitting element 204: External electrode 205: Electrical connection member 501: Mold member 502: Package 503: Light emitting element 504: External electrode 505 ... electrical connection member

【表１】 [Table 1]

───────────────────────────────────────────────────── フロントページの続き (72)発明者 竹内 勇人 徳島県阿南市上中町岡491番地100 日亜化 学工業株式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hayato Takeuchi 491 Kagaminakacho, Anan City, Tokushima Prefecture 100 Nichia Chemical Industry Co., Ltd.

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】パッケージ凹部内に配された発光素子と、
前記凹部内に配された発光素子上に配置されたモールド
部材と、を有する発光装置であって、 前記モールド部材中に発光装置の暗輝度低下率よりもＬ
ＥＤ輝度低下率が小さくさせる拡散剤を含有させたこと
を特徴とする発光装置。A light emitting element disposed in a package recess;
A mold member disposed on the light emitting element disposed in the concave portion, wherein a lowering ratio of the dark luminance of the light emitting device in the mold member is lower than L.
A light-emitting device comprising a diffusing agent that reduces the ED luminance reduction rate. 【請求項２】前記発光素子がＲＧＢが発光可能な少なく
とも３種類以上の半導体発光素子である請求項１記載の
発光装置。2. The light emitting device according to claim 1, wherein said light emitting elements are at least three types of semiconductor light emitting elements capable of emitting RGB light. 【請求項３】パッケージの凹部内に配された発光素子
と、該発光素子を保護するモールド部材と、を有する発
光装置であって、 前記発光素子上のモールド部材の厚みよりも発光素子か
らパッケージ側面までの厚みの方が大きく、且つ前記モ
ールド部材中に拡散剤が含有されたことを特徴とする発
光装置。3. A light-emitting device comprising: a light-emitting element disposed in a recess of a package; and a mold member for protecting the light-emitting element, wherein the light-emitting element has a thickness smaller than a thickness of the mold member on the light-emitting element. A light emitting device characterized in that the thickness up to the side surface is larger and a diffusing agent is contained in the mold member. 【請求項４】前記パッケージ中及び／又はパッケージの
発光面側表面に暗色系の着色剤を有する請求項３記載の
発光装置。4. The light emitting device according to claim 3, wherein a dark colorant is provided in the package and / or on the light emitting surface side surface of the package. 【請求項５】ドットマトリクス状に配置された表面実装
型ＬＥＤと、該表面実装型ＬＥＤを駆動する駆動手段
と、を有する表示装置であって、 前記表面実装型ＬＥＤのパッケージが暗色系であり、且
つ発光素子が搭載されるパッケージ凹状開口部内に拡散
剤を分散したモールド部材で封止されていることを特徴
とする表示装置。5. A display device comprising: surface-mounted LEDs arranged in a dot matrix; and driving means for driving the surface-mounted LEDs, wherein the package of the surface-mounted LEDs is a dark color type. A display device characterized in that the package is sealed with a mold member in which a diffusing agent is dispersed in a concave opening of a package in which a light emitting element is mounted.
JP09187997A 1997-04-10 1997-04-10 Light emitting device and display device using the same Expired - Lifetime JP3468018B2 (en)

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