JP2009164157A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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JP2009164157A
JP2009164157A JP2007339127A JP2007339127A JP2009164157A JP 2009164157 A JP2009164157 A JP 2009164157A JP 2007339127 A JP2007339127 A JP 2007339127A JP 2007339127 A JP2007339127 A JP 2007339127A JP 2009164157 A JP2009164157 A JP 2009164157A
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light
light emitting
substrate
reflecting resin
emitting element
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JP5119917B2 (en
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Motokazu Yamada
元量 山田
Mototaka Ikenobe
元孝 伊延
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Nichia Corp
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Nichia Corp
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Priority to JP2007339127A priority Critical patent/JP5119917B2/en
Priority to US12/341,189 priority patent/US8049237B2/en
Publication of JP2009164157A publication Critical patent/JP2009164157A/en
Priority to US13/242,641 priority patent/US9024343B2/en
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Publication of JP5119917B2 publication Critical patent/JP5119917B2/en
Priority to US14/610,030 priority patent/US9806234B2/en
Priority to US15/784,781 priority patent/US10559721B2/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device which exhibits excellent extraction efficiency of light by controlling absorption of light emitted from a light-emitting element by other members. <P>SOLUTION: A light-emitting device comprises a substrate on which conductor wiring is arranged, a light-emitting element mounted on the substrate, light reflecting resin arranged around the light-emitting element and reflecting light emitted therefrom, and a conductive wire for connecting the conductor wiring and the light-emitting element conductively, wherein the conductive wire is buried in the light reflecting resin at least partially. With such an arrangement, light being absorbed by the wire can be reduced. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、表示装置、照明器具、ディスプレイ、液晶ディスプレイのバックライト光源などに利用可能な発光装置に関し、特に、高出力な半導体発光素子を搭載しても信頼性の高い発光装置に関する。   The present invention relates to a light-emitting device that can be used for a display device, a lighting fixture, a display, a backlight light source of a liquid crystal display, and the like, and more particularly, to a light-emitting device with high reliability even when a high-power semiconductor light-emitting element is mounted.

近年、半導体発光素子(以下、単に発光素子ともいう)を用いた発光装置が種々開発されており、出力向上させるための手段が検討されている。   In recent years, various light-emitting devices using semiconductor light-emitting elements (hereinafter also simply referred to as light-emitting elements) have been developed, and means for improving output are being studied.

例えば、特許文献1には、発光素子と、基板上に設けられた配線ランドとの間に、できるだけ発光素子に近づけて反射体を実装することで、高い照度を得ることが記載されている。   For example, Patent Document 1 describes that a high illuminance is obtained by mounting a reflector as close to the light emitting element as possible between the light emitting element and a wiring land provided on the substrate.

特開2004−265979号公報。JP 2004-265979 A.

しかしながら、上記のような反射体を設けたとしても、発光素子と反射体との間にはある程度の距離が存在する。そのため、光の取り出し効率が低下しやすい。また、このような反射体を設けることで、小型化することが困難となり、発光装置自体の大きさが制限される。また、発光素子と各端子(導体配線)間を電気的に接続する方法として金ワイヤを使用する場合は、この金が発光素子からの光を吸収する性質があり、上記のごとき反射体を設けるとワイヤが長くなることで光の吸収が多くなり、出力を低減させてしまう。   However, even if the reflector as described above is provided, a certain distance exists between the light emitting element and the reflector. For this reason, the light extraction efficiency tends to decrease. Further, by providing such a reflector, it is difficult to reduce the size, and the size of the light emitting device itself is limited. Further, when a gold wire is used as a method of electrically connecting the light emitting element and each terminal (conductor wiring), this gold has a property of absorbing light from the light emitting element, and a reflector as described above is provided. And the longer the wire, the more light is absorbed and the output is reduced.

また、発光素子である発光ダイオードは2極素子であるため、基板に設けられる正負の配線ランド(導体配線)間に絶縁部を設ける必要がある。一般的に、この絶縁部は、基板などの絶縁基板材料が剥き出しとすることで容易に設けることができる。しかしながら、この絶縁基板材料には、パッケージを効率よく作製するためや、機械的強度の確保など、種々の制約があり、光学特性(光反射率や光吸収率)などについては、必ずしも目的とする特性有する材料が使われていないのが実情である。   Moreover, since the light emitting diode which is a light emitting element is a bipolar element, it is necessary to provide an insulating part between positive and negative wiring lands (conductor wiring) provided on the substrate. Generally, this insulating portion can be easily provided by exposing an insulating substrate material such as a substrate. However, this insulating substrate material has various restrictions such as efficient package production and securing of mechanical strength, and optical characteristics (light reflectance and light absorption rate) are not necessarily intended. The fact is that no material with the characteristics is used.

以上の目的を達成するため、本発明の発光装置は、導体配線が配された基板と、基板上に載置された発光素子と、光素子の周囲に配され、発光素子からの光を反射させる光反射樹脂と、導体配線と発光素子とを導通させる導電性ワイヤとを有し、導電性ワイヤは、少なくとも一部が光反射樹脂に埋設されていることを特徴とする。これにより、ワイヤによって吸収される光を低減させることができる。   In order to achieve the above object, the light emitting device of the present invention includes a substrate on which conductor wiring is disposed, a light emitting element placed on the substrate, and an optical element, and reflects light from the light emitting element. And a conductive wire for conducting the conductor wiring and the light emitting element, and at least a part of the conductive wire is embedded in the light reflecting resin. Thereby, the light absorbed by the wire can be reduced.

本発明の請求項2に記載の発光装置は、導体配線が配された基板と、導体配線上に載置された発光素子と、発光素子の周囲に配され、発光素子からの光を反射させる光反射樹脂と、を有し、基板は、導体配線から露出される露出領域を有し、露出領域は、少なくとも一部が前記光反射樹脂に埋設されていることを特徴とする。これにより、基板の露出領域による光の損失を低減させることができる。   According to a second aspect of the present invention, there is provided a light emitting device that includes a substrate on which conductor wiring is disposed, a light emitting element placed on the conductor wiring, and a light emitting element that is disposed around the light emitting element and reflects light from the light emitting element. And the substrate has an exposed region exposed from the conductor wiring, and the exposed region is at least partially embedded in the light reflecting resin. Thereby, the loss of light due to the exposed region of the substrate can be reduced.

本発明の請求項3に記載の発光装置は、導体配線が配された基板と、導体配線上に載置された発光素子と、導体配線上に載置された保護素子と、発光素子の周囲に配され、発光素子からの光を反射させる光反射樹脂とを有し、保護素子は、少なくともその一部が前記光反射樹脂に埋設されていることを特徴とする。これにより、保護素子による光の吸収を低減させることができる。   According to a third aspect of the present invention, there is provided a light emitting device comprising: a substrate on which conductor wiring is disposed; a light emitting element placed on the conductor wiring; a protection element placed on the conductor wiring; And a light reflecting resin that reflects light from the light emitting element, and at least a part of the protective element is embedded in the light reflecting resin. Thereby, absorption of the light by a protection element can be reduced.

本発明の請求項4に記載の発光装置は、基板は、導体配線から露出される露出領域を有し、露出領域の少なくとも一部が前記光反射樹脂に埋設されていることを特徴とする。また、本発明の請求項5に記載の発光装置は、導体配線と導通される保護素子を有し、保護素子の少なくとも一部が前記光反射樹脂に埋設されていることを特徴とする。このように、発光素子からの光を吸収する部材、或いは、透過する部材を、光反射樹脂に埋設させるようにすることで、光の取り出し効率を向上させることができる。   The light emitting device according to claim 4 of the present invention is characterized in that the substrate has an exposed region exposed from the conductor wiring, and at least a part of the exposed region is embedded in the light reflecting resin. According to a fifth aspect of the present invention, there is provided a light emitting device having a protective element that is electrically connected to a conductor wiring, wherein at least a part of the protective element is embedded in the light reflecting resin. Thus, the light extraction efficiency can be improved by embedding a member that absorbs or transmits light from the light emitting element in the light reflecting resin.

本発明により、発光素子の近傍に光反射部材を設けることができるため、発光素子からの光を効率よく反射することができ且つ、導電性ワイヤを用いる場合であっても、それによる光の吸収を抑制することができる。また、導体配線から露出する基板による光の吸収および透過損失を抑制し、光の取り出し効率を向上させることができる。さらに、保護素子を用いる場合も、それによる光の吸収を抑制することができる。   According to the present invention, since the light reflecting member can be provided in the vicinity of the light emitting element, the light from the light emitting element can be reflected efficiently, and even when a conductive wire is used, light absorption by the light reflecting element can be performed. Can be suppressed. Further, light absorption and transmission loss due to the substrate exposed from the conductor wiring can be suppressed, and the light extraction efficiency can be improved. Furthermore, when a protective element is used, light absorption by the protective element can be suppressed.

本発明を実施するための最良の形態を、以下に図面を参照しながら説明する。ただし、以下に示す形態は、本発明の技術思想を具体化するための発光装置を例示するものであって、本発明は、発光装置を以下に限定するものではない。   The best mode for carrying out the present invention will be described below with reference to the drawings. However, the form shown below illustrates the light-emitting device for embodying the technical idea of the present invention, and the present invention does not limit the light-emitting device to the following.

また、本明細書は、特許請求の範囲に示される部材を、実施の形態の部材に特定するものでは決してない。特に、実施の形態に記載されている構成部品の寸法、材質、形状、その相対的配置等は、特定的な記載がない限りは、本発明の範囲をそれのみに限定する趣旨ではなく、単なる説明例にすぎない。尚、各図面が示す部材の大きさや位置関係等は、説明を明確にするため誇張していることがある。さらに以下の説明において、同一の名称、符号については同一もしくは同質の部材を示しており、詳細説明を適宜省略する。さらに、本発明を構成する各要素は、複数の要素を同一の部材で構成して一の部材で複数の要素を兼用する態様としてもよいし、逆に一の部材の機能を複数の部材で分担して実現することもできる。   Further, the present specification by no means specifies the member shown in the claims as the member of the embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention only to the extent that there is no specific description. It is just an example. It should be noted that the size and positional relationship of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate. Furthermore, each element constituting the present invention may be configured such that a plurality of elements are constituted by the same member and the plurality of elements are shared by one member, and conversely, the function of one member is constituted by a plurality of members. It can also be realized by sharing.

図1Aは、本実施の形態における発光装置100を示す斜視図、図1Bは図1AのX−X‘断面における一部断面斜視図、図1Cは図1Aの上面図を示す。本実施の形態において、の発光装置100は、上面に導体配線103A、103B、103Cが配された略矩形の基板101と、導体配線103A上に載置された複数の発光素子104とを有している。これら発光素子104の周囲には、発光素子からの光を反射させる光反射樹脂102が設けられており、導体配線103A、103Bと発光素子104とを導通させる(電気的に接続させる)導電性ワイヤ105を有している。導体配線103Cは、電極として機能する導体配線103A、103Bと同一材料からなるが、電気的に接続させるものではなく、発光装置の極性を示す目印(カソードマーク/アノードマーク)として設けられている。   1A is a perspective view showing a light-emitting device 100 in the present embodiment, FIG. 1B is a partial cross-sectional perspective view in the X-X ′ cross section of FIG. 1A, and FIG. 1C is a top view of FIG. 1A. In the present embodiment, the light emitting device 100 includes a substantially rectangular substrate 101 having conductor wirings 103A, 103B, and 103C disposed on the upper surface, and a plurality of light emitting elements 104 mounted on the conductor wiring 103A. ing. Around these light emitting elements 104, a light reflecting resin 102 for reflecting light from the light emitting elements is provided, and conductive wires 103A, 103B and the light emitting elements 104 are electrically connected (electrically connected). 105. The conductor wiring 103C is made of the same material as the conductor wirings 103A and 103B functioning as electrodes, but is not electrically connected, and is provided as a mark (cathode mark / anode mark) indicating the polarity of the light emitting device.

そして、本発明は、導電性ワイヤ105の少なくとも一部が光反射樹脂に埋設されていることを特徴とする。これにより、導電性ワイヤの露出をできるだけ少なくして、光の吸収を抑制することで出力を向上させることができる。   The present invention is characterized in that at least a part of the conductive wire 105 is embedded in a light reflecting resin. Thereby, the output can be improved by minimizing the exposure of the conductive wire and suppressing the absorption of light.

(光反射樹脂)
本実施の形態において、光反射樹脂102は、発光素子104からの光を反射させるものであり、発光素子を取り囲むように設けられるとともに、少なくとも導電性ワイヤ105の一部を埋設するものである。これにより、導電性ワイヤによる光の吸収を抑制し、効率よく光を取り出すことができる。
(Light reflecting resin)
In the present embodiment, the light reflecting resin 102 reflects light from the light emitting element 104 and is provided so as to surround the light emitting element, and at least partially embeds the conductive wire 105. Thereby, absorption of the light by a conductive wire can be suppressed and light can be extracted efficiently.

導電性ワイヤは、図1Bに示すように、発光素子104から接続されたうちの一方が導体配線103Aに接続され、他方が導体配線103Bに接続されている。導体配線103Aは、発光素子が載置される領域と導電性ワイヤとが接続される領域とが、光反射樹脂102に埋設された部分で連続するように形成されている(図示せず)。そして、導体配線103A、103Bと接続される部分の導電性ワイヤ105が、光反射樹脂102内に埋設されている。導電性ワイヤ105を導体配線103A、103Bに接続した後に、光反射樹脂102を設けることで、このような構成とすることができる。なお、ここでは、導電性ワイヤ105と導体配線103A、103Bとの接続部分を被覆するように光反射樹脂102を設けているが、これに限らず、例えば、接合部分以外の領域の導電性ワイヤを埋設するように、接合部分と発光素子との間に設けてもよい。また、使用される全ての導電性ワイヤを埋設させる必要はなく、例えば図1Aに示すように、複数の導電性ワイヤ105のうち、導体配線と直接接続されている導電性ワイヤだけを埋設させるなどとすることができる。   As shown in FIG. 1B, one of the conductive wires connected from the light emitting element 104 is connected to the conductor wiring 103A, and the other is connected to the conductor wiring 103B. The conductor wiring 103A is formed so that the region where the light emitting element is placed and the region where the conductive wire is connected are continuous at a portion embedded in the light reflecting resin 102 (not shown). A portion of the conductive wire 105 connected to the conductor wirings 103 </ b> A and 103 </ b> B is embedded in the light reflecting resin 102. Such a configuration can be obtained by providing the light reflecting resin 102 after the conductive wire 105 is connected to the conductor wirings 103A and 103B. Here, the light reflecting resin 102 is provided so as to cover the connection portion between the conductive wire 105 and the conductor wirings 103A and 103B. However, the present invention is not limited to this. For example, the conductive wire in a region other than the joint portion is provided. May be provided between the joint portion and the light emitting element so as to be embedded. Moreover, it is not necessary to embed all the conductive wires to be used. For example, as shown in FIG. 1A, only the conductive wires directly connected to the conductor wiring among the plurality of conductive wires 105 are embedded. It can be.

また、本実施の形態においては、導体配線から露出される基板、すなわち、導体配線が設けられずにむき出しとなっている基板(以下、露出領域とする)の少なくとも一部が、光反射樹脂に埋設されていることを特徴とする。   Further, in the present embodiment, at least a part of the substrate exposed from the conductor wiring, that is, the substrate exposed without the conductor wiring (hereinafter referred to as an exposed region) is formed on the light reflecting resin. It is characterized by being buried.

例えば図1Bに示すように、発光素子が載置される導体配線103Aと、導電性ワイヤが接合される導体配線103Bの間などにおいて露出されている基板の露出領域101Aを光反射樹脂102で埋設することで、基板101を透過/吸収する光を抑制することができる。基板の材料は、機械的強度や作業性などを考慮してセラミックなどの絶縁性部材を用いるが、このとき、導体配線が設けられていない部分を介して、発光素子からの光を透過してしまう場合がある。基板側は、発光装置として発光させたい方向、すなわち図1Aなどにおける上方向とは、異なる方向であり、そのような方向に光が透過してしまうのは好ましくなく、これによって目的の発光方向への光が損失して取り出し効率が低下する。本発明は、光反射樹脂として、少なくとも基板よりも光の透過率の悪いもの、そして、発光素子からの光の反射率が高いものを材料として選択し、この光反射樹脂で基板の露出領域を埋設する(被覆する)ように設けることで、目的外方向への光の透過による損失を低減させることができる。また、暗色系のセラミックなど光を吸収する性質を有する基板を用いる場合も、その露出領域を光反射樹脂で被覆しておく、すなわち埋設させることで吸収を低減し、結果として光の取り出し効率を向上させることができる。   For example, as shown in FIG. 1B, an exposed region 101A of the substrate that is exposed between the conductor wiring 103A on which the light emitting element is placed and the conductor wiring 103B to which the conductive wire is bonded is embedded with a light reflecting resin 102. By doing so, light transmitted / absorbed through the substrate 101 can be suppressed. In consideration of mechanical strength and workability, the substrate material uses an insulating member such as ceramic. At this time, light from the light emitting element is transmitted through a portion where no conductor wiring is provided. May end up. The substrate side is different from the direction in which light is emitted as the light emitting device, that is, the upward direction in FIG. 1A and the like, and it is not preferable that light is transmitted in such a direction. The light is lost and the extraction efficiency decreases. In the present invention, as the light reflecting resin, at least a material having a light transmittance lower than that of the substrate and a material having a high light reflectance from the light emitting element are selected as materials, and the exposed region of the substrate is selected by the light reflecting resin. By providing it so as to be buried (covered), it is possible to reduce a loss due to transmission of light in a non-target direction. Also, when using a substrate that absorbs light, such as a dark ceramic, the exposed region is covered with a light reflecting resin, that is, embedded to reduce absorption, resulting in improved light extraction efficiency. Can be improved.

上述のような露出領域を光反射樹脂で埋設する場合は、導電性ワイヤを用いずに発光素子と導体配線とを接続させているときにも効果が得られるものである。例えば、サファイア基板を用いた窒化物系半導体からなる発光素子の場合、同一面側に電極が形成されるため、図1Aに示すように、1つの発光素子に対して、少なくとも2本の導電性ワイヤが必要となるが、この電極を下にして、金属接合部材などを用いて導体配線と接続させる場合などは、導電性ワイヤ無しで接続可能である。このような場合は、基板の露出領域、すなわち絶縁部が発光素子の直下に形成されるため、この露出領域にも光反射樹脂を設けることができる。   When the exposed region as described above is embedded with the light reflecting resin, an effect can be obtained even when the light emitting element and the conductor wiring are connected without using the conductive wire. For example, in the case of a light-emitting element made of a nitride-based semiconductor using a sapphire substrate, an electrode is formed on the same surface side. Therefore, as shown in FIG. 1A, at least two conductive elements are used for one light-emitting element. A wire is required, but when this electrode is faced down and connected to a conductor wiring using a metal bonding member or the like, connection is possible without a conductive wire. In such a case, since the exposed region of the substrate, that is, the insulating portion is formed immediately below the light emitting element, the light reflecting resin can be provided also in this exposed region.

また、図1Aなどに示すように導電性ワイヤを用いている場合は、導電性ワイヤの少なくとも一部と、基板の露出領域の少なくとも一部とを、埋設するように設けるのが好ましい。とくに、同一の光反射樹脂で埋設するようにすることで工程の簡略化などの効果も得られる。ただし、別工程で設けても、もちろん構わない。   In the case where a conductive wire is used as shown in FIG. 1A or the like, it is preferable to bury at least a part of the conductive wire and at least a part of the exposed region of the substrate. In particular, by embedding with the same light reflecting resin, effects such as simplification of the process can be obtained. However, it does not matter if it is provided in a separate process.

さらに、この光反射樹脂は、保護素子や集積回路などを埋設させてもよい。これにより、光の散乱や吸収を低減させるとともに、それら部材の載置領域を別途設ける必要がなくなるため、発光装置自体を小型化することもできる。保護素子を用いた発光装置については、図3を用いて説明する。   Further, the light reflecting resin may embed a protective element, an integrated circuit, or the like. As a result, light scattering and absorption are reduced, and it is not necessary to separately provide a mounting region for these members, so that the light emitting device itself can be downsized. A light-emitting device using a protective element will be described with reference to FIG.

図3は、保護素子を用いた発光装置300の一部断面図である。尚、発光装置300の外観は図1Aと同様の形状であり、光反射樹脂302の形状は図1Aに示す発光装置100の光反射樹脂と同様の形状であり、その一部の断面が観察できるように図示してある。図3に示すように、発光装置300は、基板301の上に導体配線303A、303B、が設けられている。発光素子304は、導体配線303A上に載置されるとともに、導電性ワイヤ305を用いて導体配線303A及び303Bと接続されている。保護素子307は、導体配線303B上に載置され、導電性接合部材によって固定されているとともに、導電性ワイヤを用いて導体配線303Aと接続されている。そして、この保護素子307を埋設するように光反射樹脂302が設けられている。   FIG. 3 is a partial cross-sectional view of a light emitting device 300 using a protection element. The appearance of the light emitting device 300 is the same shape as that of FIG. 1A, and the shape of the light reflecting resin 302 is the same shape as the light reflecting resin of the light emitting device 100 shown in FIG. 1A, and a part of the cross section can be observed. It is illustrated as follows. As shown in FIG. 3, the light emitting device 300 is provided with conductor wirings 303 </ b> A and 303 </ b> B on a substrate 301. The light emitting element 304 is placed on the conductor wiring 303A and is connected to the conductor wirings 303A and 303B using the conductive wire 305. The protection element 307 is placed on the conductor wiring 303B, fixed by a conductive bonding member, and connected to the conductor wiring 303A using a conductive wire. A light reflecting resin 302 is provided so as to embed the protection element 307.

ここでは、保護素子307は、その全体が光反射樹脂302に埋設されるように設けられており、このような構成とすることで発光素子304からの光の吸収を抑制することができる。尚、保護素子の全体ではなく、その少なくとも一部を被覆してもよい。また、保護素子と導体配線とを接続する導電性ワイヤも光反射樹脂に埋設するようにするのが好ましい。   Here, the entire protective element 307 is provided so as to be embedded in the light reflecting resin 302. With such a structure, absorption of light from the light emitting element 304 can be suppressed. In addition, you may coat | cover at least one part instead of the whole protective element. Moreover, it is preferable that the conductive wire connecting the protective element and the conductor wiring is also embedded in the light reflecting resin.

上記の保護素子を埋設させる光反射樹脂は、発光素子と導体配線とを接続している導電性ワイヤの少なくとも一部をもあわせて埋めるように設けるのが好ましい。また、基板の露出領域の少なくとも一部も、あわせて埋めるようにするのが好ましい。さらに、導電性ワイヤの少なくとも一部と基板の露出領域の少なくとも一部と保護素子の少なくとも一部を埋設するように光反射樹脂を設けるのが好ましい。   The light reflecting resin for embedding the protective element is preferably provided so as to fill at least part of the conductive wire connecting the light emitting element and the conductor wiring. Moreover, it is preferable that at least a part of the exposed region of the substrate is filled together. Furthermore, it is preferable to provide a light reflecting resin so as to embed at least part of the conductive wire, at least part of the exposed region of the substrate, and at least part of the protective element.

上述のように、発光素子からの光を吸収する部材(導電性ワイヤ、保護素子、基板)や、光を目的の方向以外に透過させる部材((透光性)基板)を、光反射部材に埋設されるようにすることで、光の取り出し効率の低減を抑制することができる。   As described above, a member that absorbs light from the light emitting element (conductive wire, protective element, substrate) or a member that transmits light in a direction other than the target direction ((translucent) substrate) is used as the light reflecting member. By being embedded, it is possible to suppress a reduction in light extraction efficiency.

上述のような光反射部材は、発光素子からの光が照射される領域に設けられていればよく、発光素子の周囲を取り囲むように設けられる。光反射樹脂の高さについては、図4を用いて説明する。   The light reflecting member as described above may be provided in a region irradiated with light from the light emitting element, and is provided so as to surround the periphery of the light emitting element. The height of the light reflecting resin will be described with reference to FIG.

図4Aは、封止部材406を用いた発光装置400の斜視図であり、図4Bは図4AにおけるY−Y‘断面における断面図、図4Cは図4AにおけるZ−Z’断面における断面図を示す。尚、図4Aに示す発光装置400は、図1Aに示す発光装置100と同様の発光措置の配置及び導電性ワイヤなどを有しているものとし、これらが封止部材406内に埋設されているものとする。   4A is a perspective view of the light emitting device 400 using the sealing member 406, FIG. 4B is a cross-sectional view taken along the line YY ′ in FIG. 4A, and FIG. 4C is a cross-sectional view taken along the line ZZ ′ in FIG. Show. The light emitting device 400 shown in FIG. 4A has the same arrangement of light emitting measures as the light emitting device 100 shown in FIG. 1A and conductive wires, and these are embedded in the sealing member 406. Shall.

図4A、図4Bに示すように、発光装置400は、基板401の上に導体配線403A、403Bを有しており、発光素子404は導体配線403A上に載置されるとともに、導電性ワイヤ405を用いて導体配線403Bと接続されている(導体配線403Aとも接続されているが、断面図には図示していない)。そして、発光素子404の周囲に光反射樹脂402が設けられており、この光反射樹脂402で囲まれた領域には封止部材406が充填されている。   As shown in FIGS. 4A and 4B, the light emitting device 400 has conductor wirings 403A and 403B on a substrate 401. The light emitting element 404 is placed on the conductor wiring 403A and the conductive wire 405 is disposed. Is connected to the conductor wiring 403B (also connected to the conductor wiring 403A, but not shown in the cross-sectional view). A light reflecting resin 402 is provided around the light emitting element 404, and a region surrounded by the light reflecting resin 402 is filled with a sealing member 406.

光反射樹脂の高さは、少なくとも発光素子の発光層と同等か、それ以上とすることが好ましい。また、導電ワイヤを用いる場合は、図4Bに示すように、導電性ワイヤ405の最も高い部分よりも高くなるようにするのが好ましい。   The height of the light reflecting resin is preferably at least equal to or higher than the light emitting layer of the light emitting element. Moreover, when using a conductive wire, it is preferable to make it higher than the highest part of the conductive wire 405, as shown to FIG. 4B.

また、光反射樹脂402に囲まれた領域に封止部材406を充填する場合、充填される封止部材406によって導電ワイヤ405の最も高い部分が被覆されるように、光反射樹脂の高さを調整する。特に、封止部材406として、液状の樹脂を滴下するなどの方法で充填する場合は、その液状の樹脂が発光素子の周囲の光反射樹脂内から外に溢れないような高さとするのが好ましい。但し、封止部材を圧縮成型や印刷塗布などの方法で形成する場合は、発光素子の周囲の光反射樹脂の外側に封止部材が充填されてもよい。   In addition, when the sealing member 406 is filled in the region surrounded by the light reflecting resin 402, the height of the light reflecting resin is set so that the highest portion of the conductive wire 405 is covered by the filled sealing member 406. adjust. In particular, when the sealing member 406 is filled by a method such as dropping a liquid resin, it is preferable to set the height so that the liquid resin does not overflow from the light reflecting resin around the light emitting element. . However, when the sealing member is formed by a method such as compression molding or printing application, the sealing member may be filled outside the light reflecting resin around the light emitting element.

また、図4Cの断面図に示すように、光反射樹脂402は、基板401の主面(上面、下面)に対して、一定の高さ(基板主面と略平行な高さ)となるようにするのが好ましい。ただし、これに限るものではなく、光反射樹脂の形成方法によっては、他の形状とするのが好ましい。   Further, as shown in the cross-sectional view of FIG. 4C, the light reflecting resin 402 has a certain height (height substantially parallel to the main surface of the substrate) with respect to the main surface (upper surface, lower surface) of the substrate 401. Is preferable. However, the shape is not limited to this, and other shapes are preferable depending on the method of forming the light reflecting resin.

例えば、図5に示す発光装置500は、図4AのZ−Z‘断面に相当する光反射樹脂の部分の断面図であり、図4Cに示すような一定の高さの光反射樹脂402ではなく、その一部が部分的に盛り上がったような形状の光反射樹脂502を有する。具体的には、図4Aで示す発光装置400の光反射樹脂402のうち、縦方向の光反射樹脂と横方向の光反射樹脂とが交差する位置に相当する光反射樹脂502Bが、それ以外の領域の光反射樹脂502Aよりもやや高くなっている。   For example, the light emitting device 500 shown in FIG. 5 is a cross-sectional view of a portion of the light reflecting resin corresponding to the ZZ ′ cross section of FIG. 4A, not the light reflecting resin 402 having a certain height as shown in FIG. 4C. The light-reflecting resin 502 has a shape in which a part thereof is partially raised. Specifically, among the light reflecting resins 402 of the light emitting device 400 shown in FIG. 4A, the light reflecting resin 502B corresponding to the position where the light reflecting resin in the vertical direction and the light reflecting resin in the horizontal direction intersect with each other is used. It is slightly higher than the light reflecting resin 502A in the region.

このような一部が盛り上がったような形状の光反射樹脂は、粘度の高い樹脂をノズルから噴出させて分割前の基板上に縦方向及び横方向に塗布(描画)するような方法で形成することで得られる。特に、図3に示すような保護素子307を有する発光素子の場合、このように部分的に光反射樹脂が高くなる領域に保護素子を配置することで、比較的高さのある保護素子の全体を光反射樹脂で埋設させることができる。   The light reflecting resin having such a shape that a part is raised is formed by a method in which a resin having high viscosity is ejected from a nozzle and applied (drawn) in a vertical direction and a horizontal direction on a substrate before division. Can be obtained. In particular, in the case of a light emitting element having a protective element 307 as shown in FIG. 3, the protective element is disposed in a region where the light reflecting resin is partially increased in this way, so that the entire protective element having a relatively high height can be obtained. Can be embedded with light reflecting resin.

光反射部材のうち、発光素子と対向する面(内壁)は、例えば図4Bの一部断面図に示すように、上方に向かって広がるような傾斜面とするのが好ましい。尚、図1Bにおいては、内壁及び外壁とも傾斜面としているが、どちらか一方(例えば内壁)のみを傾斜させるようにしてもよい。また、図1Bにおいては、内壁から外壁にかけて角部のない丸みを帯びた形状としているが、これに限らず、上面が平らな面とするなどの形状とすることもできる。   Of the light reflecting member, the surface (inner wall) facing the light emitting element is preferably an inclined surface that spreads upward as shown in the partial sectional view of FIG. 4B, for example. In FIG. 1B, both the inner wall and the outer wall are inclined surfaces, but only one of them (for example, the inner wall) may be inclined. Further, in FIG. 1B, the shape is rounded with no corners from the inner wall to the outer wall. However, the shape is not limited to this, and may be a shape such as a flat upper surface.

また、光反射樹脂の内形と外形との距離、すなわち上面視における光反射樹脂の幅は、基板の大きさや、載置させる発光素子の大きさ等種々考慮して調整することができる。また、高さとのバランス等も考慮して選択するのが好ましい。   Further, the distance between the inner shape and the outer shape of the light reflecting resin, that is, the width of the light reflecting resin in a top view can be adjusted in consideration of various factors such as the size of the substrate and the size of the light emitting element to be placed. Further, it is preferable to select in consideration of the balance with the height.

発光素子の周囲に配される光反射樹脂の内形については、図1C、図8などを用いて説明する。図1C、図8は発光装置100、800の上面図であり、それぞれ略矩形状の基板101、801上に、導体配線103A、803Aが設けられ、その上に発光素子1040、804が載置されている。発光素子と導体配線とは、導電性ワイヤ105、805によって接続されているが、この接続部付近の導電性ワイヤは光反射樹脂102、802によって埋設されているため図示していない。発光素子の周囲に配される光反射樹脂の内形は、上面視において図1Cのように、略矩形とすることができる。しかし、これに限らず、図8に示すように略矩形の角部が丸みを帯びた形状とすることができる。特に、光反射樹脂として、粘度の高い樹脂を塗布することで形成させる場合は、縦方向及び横方向に形成される光反射樹脂が、それぞれ硬化される前に接するように設けると混ざり合って一体化され、その場合に図8に示すように丸みを帯びた形状となる。このような形状とすることで、光の反射を均一に反射しやすくすることができる。また、上記形状に限らず、上面視において円形、楕円形、多角形など、所望の発光特性等に応じた形状とすることができる。   The inner shape of the light reflecting resin disposed around the light emitting element will be described with reference to FIGS. 1C and 8. FIGS. 1C and 8 are top views of the light emitting devices 100 and 800. Conductor wirings 103A and 803A are provided on substantially rectangular substrates 101 and 801, respectively, and light emitting elements 1040 and 804 are placed thereon. ing. The light emitting element and the conductor wiring are connected by the conductive wires 105 and 805, but the conductive wire in the vicinity of the connecting portion is not shown because it is buried by the light reflecting resins 102 and 802. The inner shape of the light reflecting resin disposed around the light emitting element can be substantially rectangular as shown in FIG. 1C when viewed from above. However, the present invention is not limited to this, and a substantially rectangular corner may be rounded as shown in FIG. In particular, when the resin is formed by applying a highly viscous resin as the light reflecting resin, the light reflecting resin formed in the vertical direction and the horizontal direction are mixed and integrated so as to contact each other before being cured. In this case, the shape becomes round as shown in FIG. By adopting such a shape, it is possible to easily reflect light uniformly. In addition, the shape is not limited to the above shape, and may be a shape corresponding to desired light emission characteristics such as a circle, an ellipse, and a polygon when viewed from above.

さらに、本発明においては、光反射樹脂は、発光素子の側面に達するように形成されてもよい。その場合、内形は発光素子の形状やその配置に応じた形状となる。   Further, in the present invention, the light reflecting resin may be formed so as to reach the side surface of the light emitting element. In that case, the inner shape is a shape corresponding to the shape of the light emitting element and its arrangement.

また、図1Cなどに示す発光装置は、複数の発光素子の全てを囲むように光反射樹脂を形成してあるが、これに限らず、1つの発光素子の周囲に、或いは、2以上の複数個の周囲に光反射樹脂を設けることもできる。このように、より近接した位置に光反射樹脂を配し、光を吸収する導電性ワイヤや光を透過/吸収する基板などをその中に埋設させることで、光の損失を効率よく低減させることができる。   In the light emitting device shown in FIG. 1C and the like, the light reflecting resin is formed so as to surround all of the plurality of light emitting elements. However, the light emitting device is not limited to this. A light reflecting resin may be provided around the individual. In this way, by arranging the light reflecting resin at a closer position and burying the conductive wire that absorbs light or the substrate that transmits / absorbs light, the loss of light can be efficiently reduced. Can do.

発光素子の周囲に配される光反射樹脂の外形については、図1、図7などを用いて説明する。図1C、図7は発光装置100、700の上面図であり、それぞれ略矩形状の基板101、701上に、導体配線103A、703Aが設けられ、その上に発光素子1040、704が載置されている。発光素子と導体配線とは、導電性ワイヤ105、705によって接続されているが、この接続部付近の導電性ワイヤは光反射樹脂102、702によって埋設されているため図示していない。発光素子の周囲に配される光反射樹脂の外形は、上面視において図7のように、基板701の外縁から光反射樹脂702の外縁が離間するように設けることができる。この場合、基板の外縁形状と光反射樹脂の外縁形状とを、互いに相似形状となるようにするのが好ましく、図7に示すような略四角形の基板701の場合、光反射樹脂702の外縁も略四角形とし、各辺が略平行となるようにするのが好ましい。   The outer shape of the light reflecting resin disposed around the light emitting element will be described with reference to FIGS. 1C and 7 are top views of the light emitting devices 100 and 700. Conductor wirings 103A and 703A are provided on substantially rectangular substrates 101 and 701, respectively, and light emitting elements 1040 and 704 are placed thereon. ing. The light emitting element and the conductor wiring are connected by the conductive wires 105 and 705, but the conductive wire in the vicinity of the connecting portion is not shown because it is buried by the light reflecting resins 102 and 702. The outer shape of the light reflecting resin disposed around the light emitting element can be provided so that the outer edge of the light reflecting resin 702 is separated from the outer edge of the substrate 701 in a top view as shown in FIG. In this case, it is preferable that the outer edge shape of the substrate and the outer edge shape of the light reflecting resin are similar to each other. In the case of a substantially square substrate 701 as shown in FIG. It is preferable to use a substantially rectangular shape so that each side is substantially parallel.

このように、基板の外縁と光反射樹脂の外縁とを離間させる、言い換えれば基板の外縁よりも光反射樹脂の外縁を小さくなるようにすることで、後工程において分割工程が容易になる。特に、基板と硬度などが異なる樹脂を用いて光反射樹脂とする場合、例えば、セラミック基板上に、それよりも硬度が低く、且つ展性のある光反射樹脂を設ける場合、後の分割工程(個片化工程)が行いにくい(切断しにくい)場合がある。そのため、基板の外縁(すなわち分割位置)を、基板のみとすることで生産性よく分割させることができる。   In this way, by separating the outer edge of the substrate from the outer edge of the light reflecting resin, in other words, by making the outer edge of the light reflecting resin smaller than the outer edge of the substrate, the dividing step is facilitated in the subsequent process. In particular, when a resin having a hardness different from that of a substrate is used as a light reflecting resin, for example, when a light reflecting resin having a lower hardness and malleability is provided on a ceramic substrate, a subsequent dividing step ( In some cases, the separation step is difficult to perform (hard to cut). Therefore, the outer edge of the substrate (that is, the dividing position) can be divided with high productivity by using only the substrate.

ここで、分割工程について説明する。図9A及び図9Bは、基板を分割する前の発光装置の集合体の一部を示す図であり、図9Aは光反射樹脂成形前、図9Bは光反射樹脂902形成後を示す図である。図9Aに示すように、基板901上に導体配線903A、903Bを設け、その上に発光素子904を載置し、導電性ワイヤ905を用いて発光素子と導体配線を電気的に接続させる。そして、その後に図9Bに示すように光反射樹脂902を、発光素子904の周囲に設ける。ここでは、光反射樹脂902を縦横に交差するように設けており、図中の矢印の部分が分割位置である。このようにすることで、光反射樹脂の成形を容易にするとともに、分割工程を比較的容易に行うことができる。ただし、このような形状や方法にかかわらず、印刷塗布など他の方法を用いてもよい。   Here, the dividing step will be described. 9A and 9B are diagrams showing a part of the assembly of the light emitting device before the substrate is divided. FIG. 9A is a diagram before the light reflecting resin molding, and FIG. 9B is a diagram after the light reflecting resin 902 is formed. . As shown in FIG. 9A, conductor wirings 903A and 903B are provided on a substrate 901, a light emitting element 904 is placed thereon, and the light emitting element and the conductor wiring are electrically connected using a conductive wire 905. Thereafter, as shown in FIG. 9B, a light reflecting resin 902 is provided around the light emitting element 904. Here, the light reflecting resin 902 is provided so as to intersect vertically and horizontally, and an arrow portion in the figure is a division position. By doing in this way, while forming light reflection resin easily, a division | segmentation process can be performed comparatively easily. However, other methods such as printing and coating may be used regardless of the shape and method.

また、光反射樹脂の外形(外縁)が、基板と一致するような形状とすることもできる。   Moreover, it can also be set as the shape where the external shape (outer edge) of light reflection resin corresponds with a board | substrate.

さらにまた、基板の外縁と光反射樹脂の外縁(外形)とを異なるようにすることもできる。例えば、図1Aなどに示すように、光反射樹脂102は、基板101の外縁から離間する第1の領域Aと、基板の外縁と接する(一致する)第2の領域Bと、を設けることができる。   Furthermore, the outer edge of the substrate and the outer edge (outer shape) of the light reflecting resin can be made different. For example, as shown in FIG. 1A and the like, the light reflecting resin 102 is provided with a first region A that is separated from the outer edge of the substrate 101 and a second region B that is in contact with (matches) the outer edge of the substrate. it can.

光反射樹脂の一部のみを基板の外縁から離間するように設ける、言い換えると、基板の一部を露出させることで、分割(切断)位置の一部を基板のみとすることができ、生産性よく分割(切断)させることができる。このように分割位置の一部において、光反射樹脂をも切断する場合、基板のみを分割する場合に比して、やや生産性は劣るものの、光反射樹脂と基板との密着面積を大きくすることができ、さらには、光反射樹脂の形成工程の簡略化などのメリットがある。また、図8に示すように、縦方向と横方向に設けられる光反射樹脂の交差部分が丸みを帯びたような形状とすることができる。   Only a part of the light reflecting resin is provided so as to be separated from the outer edge of the substrate, in other words, by exposing a part of the substrate, a part of the dividing (cutting) position can be only the substrate, and productivity It can be divided (cut) well. In this way, when cutting the light reflecting resin at a part of the dividing position, the productivity of the light reflecting resin and the substrate should be increased although the productivity is slightly inferior to the case of dividing only the substrate. Furthermore, there are merits such as simplification of the process of forming the light reflecting resin. Moreover, as shown in FIG. 8, it can be set as the shape where the cross | intersection part of the light reflection resin provided in the vertical direction and a horizontal direction was rounded.

また、光反射樹脂の第1の領域は、基板の一辺において第2の領域に挟まれるように形成されるのが好ましい。このようにすることで、光反射樹脂と基板との密着面積を大きくすることができる。また、光反射樹脂の上にレンズ部材を設ける場合は、そのレンズ部材との密着性も向上させることができる。   Further, the first region of the light reflecting resin is preferably formed so as to be sandwiched between the second regions on one side of the substrate. By doing in this way, the contact | adherence area of light reflection resin and a board | substrate can be enlarged. Moreover, when providing a lens member on light reflection resin, adhesiveness with the lens member can also be improved.

さらに、光反射樹脂の第2の領域を、基板の角部から離間するように設けるのが好ましい。このようにすることで、光反射樹脂が基板から剥がれるのを抑制することができる。また、基板の角部に分割位置を決める目印などを設け、これが光反射樹脂に覆われないようにすることで、分割位置精度を向上させることができる。   Furthermore, it is preferable to provide the second region of the light reflecting resin so as to be separated from the corner of the substrate. By doing in this way, it can suppress that light reflection resin peels from a board | substrate. Further, by providing a mark or the like for determining the dividing position at the corner of the substrate so that it is not covered with the light reflecting resin, the dividing position accuracy can be improved.

光反射樹脂を構成する具体的な材料としては、発光素子からの光を吸収しにくく、且つ、効率よく反射する部材が好ましい。具体的な反射率としては、少なくとも50%以上とすることが好ましく、より好ましくは70%以上である。尚、光反射樹脂は光を散乱させる性質を有する場合は、その反射率の測定が困難な場合があるが、積分球を用いて標準拡散板との比率で求めるなどの方法で、参考値として測定することができる。   As a specific material constituting the light reflecting resin, a member that hardly absorbs light from the light emitting element and efficiently reflects is preferable. The specific reflectance is preferably at least 50% or more, more preferably 70% or more. In addition, when the light reflecting resin has the property of scattering light, it may be difficult to measure the reflectance, but as a reference value by a method such as obtaining the ratio with a standard diffusion plate using an integrating sphere. Can be measured.

また、絶縁性部材が好ましく、発光素子からの光や、外光によって劣化しにくい部材が好ましい。また、ある程度の強度を有するもので、熱硬化性樹脂、熱可塑性樹脂などを用いることができ、より具体的には、フェノール樹脂、ガラスエポキシ樹脂、BTレジン、PPAやシリコーン樹脂などが挙げられる。これら母体となる樹脂に、発光素子からの光を反射する反射部材(例えばTiO、Al、ZrO,MgO)などを添加することで、効率よく光を反射させることができる。 Further, an insulating member is preferable, and a member that is not easily deteriorated by light from the light emitting element or external light is preferable. Moreover, it has a certain amount of strength, and a thermosetting resin, a thermoplastic resin, or the like can be used, and more specifically, a phenol resin, a glass epoxy resin, a BT resin, a PPA, a silicone resin, or the like can be given. By adding a reflecting member (for example, TiO 2 , Al 2 O 3 , ZrO 2 , or MgO) that reflects light from the light emitting element to the base resin, light can be efficiently reflected.

このような光反射樹脂は、発光素子や後述する保護素子を導体配線上に載置した後に、粘度の高い樹脂を、所望のサイズ(幅)に応じたノズル先端から噴出させることで容易に設けることができる。また、印刷塗布などの方法でも設けることができる。このようにして設けられる光反射樹脂は、熱や光などで硬化させることで、発光素子などを保護する保護部材として機能することができる。   Such a light reflecting resin is easily provided by ejecting a resin having a high viscosity from a nozzle tip corresponding to a desired size (width) after placing a light emitting element or a protective element to be described later on a conductor wiring. be able to. Moreover, it can also provide by methods, such as printing application | coating. The light reflecting resin thus provided can function as a protective member that protects the light emitting element and the like by being cured by heat or light.

(基板)
基板は、導体配線が配される絶縁性の部材であり、光反射樹脂を設けることが可能な、略板状の部材である。基板の材料は、ガラスエポキシ樹脂、セラミックスあるいはガラスを挙げることができる。特に、セラミックスとしては、アルミナ、窒化アルミニウム、ムライト、炭化ケイ素あるいは窒化ケイ素などが好ましい。これらを材料とすることにより、耐熱性の高い基板とすることができる。
(substrate)
The substrate is an insulating member on which conductor wiring is arranged, and is a substantially plate-like member to which a light reflecting resin can be provided. Examples of the material for the substrate include glass epoxy resin, ceramics, and glass. In particular, as the ceramic, alumina, aluminum nitride, mullite, silicon carbide, silicon nitride, or the like is preferable. By using these as materials, a substrate having high heat resistance can be obtained.

(導体配線)
導体配線は、基板の上面に形成され、基板の内部や表面などを介して裏面にまで連続するよう設けられ、外部と電気的な接続が取れるような機能を有するものである。導体配線の大きさや形状は、種々選択することができ、例えば図1に示す発光装置100のように、光反射樹脂102に端部が埋設されるように大きく形成することもできるし、図2に示す発光装置200のように、光反射樹脂202から離間する部分を有する導体配線203Aとし、この上に発光装置204を設けるようにすることもできる。また、外部とは電気的な接続が無く、光反射材として機能する物も含む。具体的には、銅、アルミニウム、金、銀、タングステン、鉄、ニッケル等の金属又は鉄−ニッケル合金、りん青銅、鉄入り銅等が挙げられる。
(Conductor wiring)
The conductor wiring is formed on the upper surface of the substrate, is provided so as to continue to the back surface through the inside or the front surface of the substrate, and has a function of making electrical connection with the outside. The size and shape of the conductor wiring can be variously selected. For example, like the light emitting device 100 shown in FIG. 1, the conductor wiring can be formed large so that the end portion is embedded in the light reflecting resin 102, or FIG. Like the light emitting device 200 shown in FIG. 5, the conductor wiring 203A having a portion separated from the light reflecting resin 202 may be provided, and the light emitting device 204 may be provided thereon. Moreover, the thing which has no electrical connection with the outside and functions as a light reflecting material is also included. Specific examples include metals such as copper, aluminum, gold, silver, tungsten, iron, nickel, iron-nickel alloys, phosphor bronze, iron-containing copper, and the like.

(封止部材/レンズ部材)
封止部材は、光反射樹脂で囲まれた領域やその外側に設けられるものであり、発光素子や保護素子などを、塵芥、水分や外力などから保護する部材である。また、発光素子からの光を透過可能な透光性を有し、且つ、それらによって劣化のしにくい耐光性を有するものが好ましい。具体的な材料としては、シリコーン樹脂、エポキシ樹脂やユリア樹脂を挙げることができる。このような材料に加え、所望に応じて着色剤、光拡散剤、フィラー、色変換部材(蛍光部材)などを含有させることもできる。
(Sealing member / lens member)
The sealing member is provided on or outside the region surrounded by the light reflecting resin, and is a member that protects the light emitting element, the protection element, and the like from dust, moisture, external force, and the like. Further, it is preferable to have a light-transmitting property capable of transmitting light from the light-emitting element and to have a light resistance that is not easily deteriorated by them. Specific examples of the material include silicone resin, epoxy resin, and urea resin. In addition to such materials, a colorant, a light diffusing agent, a filler, a color conversion member (fluorescent member), and the like can be included as desired.

封止部材の充填量は、発光素子、ツェナーダイオードなどの保護素子、導電性ワイヤなどが被覆される量であればよい。   The filling amount of the sealing member may be an amount that covers a light emitting element, a protective element such as a Zener diode, a conductive wire, or the like.

また、封止部材の表面の形状については配光特性などに応じて種々選択することができる。例えば、図4Bに示すように、光反射樹脂402と同等或いはそれ以下の高さとなるよう充填することができる。ここでは、中央付近が周辺部分よりも若干低くなるような凹状としているが、これにかぎらず、表面が平らなものや、中央付近が周辺部分よりも高くなるような凸状とすることができる。   Further, the shape of the surface of the sealing member can be variously selected according to the light distribution characteristics and the like. For example, as shown in FIG. 4B, it can be filled so as to have a height equal to or lower than that of the light reflecting resin 402. Here, the concave portion is formed such that the vicinity of the center is slightly lower than the peripheral portion. However, the shape is not limited to this, and the surface may be flat or may be convex so that the vicinity of the center is higher than the peripheral portion. .

また、封止部材とは別に、レンズ部材を設けてもよい。例えば、図6に示す発光装置600のように、基板601の外縁まで達するとともに、半球面状のレンズ部材を設けることもできる。ここでは、光反射樹脂602のやや外側よりの上部から球面状となるようにレンズ部材608を設けている。   In addition to the sealing member, a lens member may be provided. For example, as in the light-emitting device 600 shown in FIG. 6, a lens member having a hemispherical shape can be provided while reaching the outer edge of the substrate 601. Here, the lens member 608 is provided so as to be spherical from the upper part of the light reflecting resin 602 slightly outside.

光反射樹脂602の外側は、発光素子604からの光は届きにくいため、レンズ形状としなくてもよい。このような形状とすることで、レンズ部材を形成後に個片化(分割)する際に、レンズ部分(球面状の部分)を損傷することなく分割することができるため、光学特性に与える影響を抑制することができる。また、このように、レンズ部材608を封止部材606とは別部材として設けることで、例えば後述するような波長変換部材(蛍光部材)を用いる場合、封止部材606にのみ蛍光部材を混入させることで、所望の発光色とするための蛍光部材の量を規定しやすく、また、レンズ部分を樹脂のみとすることができるため、配光特性を調整しやすくなる。レンズの曲率や大きさなどは所望の配光特性となるよう、種々選択することができる。   The outside of the light reflecting resin 602 does not need to have a lens shape because light from the light emitting element 604 does not easily reach. With such a shape, when the lens member is divided (divided) after being formed, the lens portion (spherical portion) can be divided without damaging it, which has an effect on the optical characteristics. Can be suppressed. In addition, by providing the lens member 608 as a separate member from the sealing member 606 as described above, for example, when using a wavelength conversion member (fluorescent member) as described later, the fluorescent member is mixed only in the sealing member 606. Thus, it is easy to define the amount of the fluorescent member for obtaining a desired emission color, and the lens portion can be made of only resin, so that it becomes easy to adjust the light distribution characteristics. The curvature and size of the lens can be variously selected so as to obtain desired light distribution characteristics.

また、レンズ部材は、図6に示すような凸状の半球面状のレンズとするだけでなく、凹部を設けて横方向に光を反射させる形状や、フレネルレンズ形状などとすることもできる。また、目的や用途に応じては、拡散材や顔料、波長変換部材等を混入させてもよい。   Further, the lens member can be not only a convex hemispherical lens as shown in FIG. 6 but also a shape in which a concave portion is provided to reflect light in the lateral direction, or a Fresnel lens shape. Further, depending on the purpose and application, a diffusing material, a pigment, a wavelength conversion member, or the like may be mixed.

(ダイボンド樹脂)
ダイボンド樹脂は、基体や導体配線上に発光素子や保護素子などを載置させるための接合部材であり、載置する素子の基板によって導電性ダイボンド部材又は縁性ダイボンド部材のいずれかを選択することができる。例えば、絶縁性基板であるサファイア上に窒化物半導体層を積層させた半導体発光素子の場合、ダイボンド部材は絶縁性でも導電性でも用いることができ、SiC基板などの導電性基板を用いる場合は、導電性ダイボンド部材を用いることで導通を図ることができる。絶縁性ダイボンド部材としては、エポキシ樹脂、シリコーン樹脂等を用いることができる。これらの樹脂を用いる場合は、半導体発光素子からの光や熱による劣化を考慮して、半導体発光素子裏面にAl膜などの反射率の高い金属層を設けることができる。この場合、蒸着やスパッタあるいは薄膜を接合させるなどの方法を用いることができる。また、導電性ダイボンド部材としては、銀、金、パラジウムなどの導電性ペーストや、Au−Sn共晶などの半田、低融点金属等のろう材を用いることができる。さらに、これらダイボンド部材のうち、特に透光性のダイボンド部材を用いる場合は、その中に半導体発光素子からの光を吸収して異なる波長の光を発光する蛍光部材を含有させることもできる。
(Die bond resin)
The die bond resin is a bonding member for mounting a light emitting element, a protective element, etc. on a substrate or a conductor wiring, and either a conductive die bond member or an edge die bond member is selected depending on the substrate of the element to be mounted. Can do. For example, in the case of a semiconductor light emitting device in which a nitride semiconductor layer is laminated on sapphire, which is an insulating substrate, the die bond member can be used either insulative or conductive, and when using a conductive substrate such as a SiC substrate, Conductivity can be achieved by using a conductive die bond member. As the insulating die bond member, an epoxy resin, a silicone resin, or the like can be used. In the case of using these resins, a metal layer having a high reflectance such as an Al film can be provided on the back surface of the semiconductor light emitting element in consideration of deterioration due to light or heat from the semiconductor light emitting element. In this case, a method such as vapor deposition, sputtering, or bonding a thin film can be used. In addition, as the conductive die bond member, a conductive paste such as silver, gold, or palladium, solder such as Au—Sn eutectic, or a brazing material such as a low melting point metal can be used. Further, among these die bond members, in particular, when a translucent die bond member is used, a fluorescent member that absorbs light from the semiconductor light emitting element and emits light of a different wavelength can be included therein.

(導電性ワイヤ)
発光素子の電極と、基板に設けられる導電部材とを接続する導電性ワイヤは、金、銅、白金、アルミニウム等の金属及びそれらの合金を用いた導電性ワイヤが挙げられる。特に、熱抵抗などに優れた金を用いるのが好ましい。
(Conductive wire)
Examples of the conductive wire that connects the electrode of the light emitting element and the conductive member provided on the substrate include conductive wires using metals such as gold, copper, platinum, and aluminum, and alloys thereof. In particular, it is preferable to use gold excellent in thermal resistance.

(波長変換部材)
上記透光性部材中に、波長変換部材として半導体発光素子からの光の少なくとも一部を吸収して異なる波長を有する光を発する蛍光部材を含有させることもできる。
(Wavelength conversion member)
In the translucent member, a fluorescent member that emits light having a different wavelength by absorbing at least a part of light from the semiconductor light emitting element may be included as a wavelength conversion member.

蛍光部材としては、半導体発光素子からの光を、より長波長に変換させるものの方が効率がよい。蛍光部材は、1種の蛍光物質等を単層で形成してもよいし、2種以上の蛍光物質等が混合された単層を形成してもよいし、1種の蛍光物質等を含有する単層を2層以上積層させてもよいし、2種以上の蛍光物質等がそれぞれ混合された単層を2層以上積層させてもよい。   As the fluorescent member, it is more efficient to convert the light from the semiconductor light emitting element into a longer wavelength. The fluorescent member may be formed of a single type of fluorescent material or the like, or may be formed of a single layer in which two or more types of fluorescent material are mixed, or contains one type of fluorescent material, etc. Two or more single layers may be stacked, or two or more single layers each of which is mixed with two or more kinds of fluorescent substances may be stacked.

蛍光部材としては、例えば、窒化物系半導体を発光層とする半導体発光素子からの光を吸収し異なる波長の光に波長変換するものであればよい。例えば、Eu、Ce等のランタノイド系元素で主に賦活される窒化物系蛍光体・酸窒化物系蛍光体、Eu等のランタノイド系、Mn等の遷移金属系の元素により主に賦活されるアルカリ土類ハロゲンアパタイト蛍光体、アルカリ土類金属ホウ酸ハロゲン蛍光体、アルカリ土類金属アルミン酸塩蛍光体、アルカリ土類ケイ酸塩、アルカリ土類硫化物、アルカリ土類チオガレート、アルカリ土類窒化ケイ素、ゲルマン酸塩、または、Ce等のランタノイド系元素で主に賦活される希土類アルミン酸塩、希土類ケイ酸塩またはEu等のランタノイド系元素で主に賦活される有機及び有機錯体等から選ばれる少なくともいずれか1以上であることが好ましい。好ましくは、Ce等のランタノイド系元素で主に賦活される希土類アルミン酸塩蛍光体である、YAl12:Ce、(Y0.8Gd0.2Al12:Ce、Y(Al0.8Ga0.212:Ce、(Y,Gd)(Al,Ga)12の組成式で表されるYAG系蛍光体である。また、Yの一部もしくは全部をTb、Lu等で置換したTbAl12:Ce、LuAl12:Ceなどもある。さらに、上記蛍光体以外の蛍光体であって、同様の性能、作用、効果を有する蛍光体も使用することができる。 Any fluorescent member may be used as long as it absorbs light from a semiconductor light emitting device having a nitride semiconductor as a light emitting layer and converts the light to light of a different wavelength. For example, nitride phosphors / oxynitride phosphors mainly activated by lanthanoid elements such as Eu and Ce, lanthanoid phosphors such as Eu, and alkalis mainly activated by transition metal elements such as Mn Earth halogen apatite phosphor, alkaline earth metal borate halogen phosphor, alkaline earth metal aluminate phosphor, alkaline earth silicate, alkaline earth sulfide, alkaline earth thiogallate, alkaline earth silicon nitride At least selected from organic and organic complexes mainly activated by lanthanoid elements such as germanate or lanthanoid elements such as Ce, rare earth aluminate, rare earth silicate or Eu Any one or more are preferable. Preferably, Y 3 Al 5 O 12 : Ce, (Y 0.8 Gd 0.2 ) 3 Al 5 O 12 : Ce, which is a rare earth aluminate phosphor mainly activated by a lanthanoid element such as Ce. Y 3 (Al 0.8 Ga 0.2 ) 5 O 12 : Ce, (Y, Gd) 3 (Al, Ga) 5 O 12 is a YAG phosphor represented by a composition formula. Further, there are Tb 3 Al 5 O 12 : Ce, Lu 3 Al 5 O 12 : Ce, etc. in which a part or all of Y is substituted with Tb, Lu, or the like. Furthermore, phosphors other than the above phosphors and having the same performance, function, and effect can be used.

(半導体発光素子)
本発明においては、半導体発光素子として発光ダイオードを用いるのが好ましい。
(Semiconductor light emitting device)
In the present invention, it is preferable to use a light emitting diode as the semiconductor light emitting element.

半導体発光素子は、任意の波長のものを選択することができる。例えば、青色、緑色の発光素子としては、ZnSeや窒化物系半導体(InAlGa1−X−YN、0≦X、0≦Y、X+Y≦1)を用いたものを用いることができる。また、赤色の発光素子としては、GaAs、InPなどを用いることができる。さらに、これ以外の材料からなる半導体発光素子を用いることもできる。用いる発光素子の組成や発光色、大きさや、個数などは目的に応じて適宜選択することができる。 A semiconductor light emitting device having an arbitrary wavelength can be selected. For example, as blue and green light emitting elements, those using ZnSe or a nitride semiconductor (In X Al Y Ga 1- XYN, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) are used. it can. As the red light emitting element, GaAs, InP, or the like can be used. Furthermore, a semiconductor light emitting element made of a material other than this can also be used. The composition, emission color, size, number, and the like of the light emitting element to be used can be appropriately selected according to the purpose.

蛍光物質を有する発光装置とする場合には、その蛍光物質を効率良く励起できる短波長が発光可能な窒化物半導体(InAlGa1−X−YN、0≦X、0≦Y、X+Y≦1)が好適に挙げられる。半導体層の材料やその混晶度によって発光波長を種々選択することができる。 In the case of a light-emitting device having a fluorescent material, a nitride semiconductor (In X Al Y Ga 1- XYN, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is preferable. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal.

また、可視光領域の光だけでなく、紫外線や赤外線を出力する発光素子とすることができる。さらには、半導体発光素子とともに、受光素子などを搭載することができる。   Further, a light-emitting element that outputs not only light in the visible light region but also ultraviolet rays and infrared rays can be obtained. Furthermore, a light receiving element or the like can be mounted together with the semiconductor light emitting element.

<実施例1>
図9Aに示すように、板状のアルミナセラミックス上に、表面にAgメッキが施された導体配線が設けられた基板を用意する。この導体配線上に、各辺が500μmと290μmの窒化物系半導体からなる発光素子6個を、AuSnからなる共晶接合部材を用いて接合させる。ここで、用いる発光素子は、主波長が約450nmの青色発光を有し、6個ともほぼ同じ波長を有する。
<Example 1>
As shown in FIG. 9A, a substrate is prepared on a plate-like alumina ceramic provided with conductor wiring with Ag plating on the surface. On the conductor wiring, six light emitting elements made of a nitride semiconductor having sides of 500 μm and 290 μm are bonded using a eutectic bonding member made of AuSn. Here, the light-emitting elements used have blue light emission with a dominant wavelength of about 450 nm, and all six have substantially the same wavelength.

次にシリコーン樹脂に平均粒径0.25μmのチタニア(TiO)を重量比で50wt%分散させた白色系の樹脂(光反射樹脂)を、ディスペンサーを用いて前記6個の発光素子の周りに描画する(塗布する)。 Next, a white resin (light reflecting resin) in which 50 wt% of titania (TiO 2 ) having an average particle diameter of 0.25 μm is dispersed in a silicone resin is placed around the six light emitting elements using a dispenser. Draw (apply).

このようにして図9Bに示すような光反射樹脂が形成された発光素子の集合体が作製される。この時、各光反射樹脂の線幅(縦横の光反射樹脂が交差していない部分)は、基板と接している光反射樹脂下部の幅(上面視において最大幅)が600μmであり、発光素子が載置された導体配線と、金ワイヤが直接接続された導体配線との間のアルミナセラミックス基板の剥き出し部(露出領域)を覆い、且つ、発光素子と光反射樹脂の間に基板の露出領域無いようにする。このとき、導電性ワイヤの一部も光反射樹脂に埋設されるように形成する。   In this way, an assembly of light emitting elements formed with the light reflecting resin as shown in FIG. 9B is manufactured. At this time, the line width of each light reflecting resin (the portion where the vertical and horizontal light reflecting resins do not intersect) is 600 μm at the width of the lower portion of the light reflecting resin that is in contact with the substrate (maximum width in top view). Covers the exposed portion (exposed region) of the alumina ceramic substrate between the conductor wiring on which the metal wire is placed and the conductor wiring to which the gold wire is directly connected, and the exposed region of the substrate between the light emitting element and the light reflecting resin Try not to have it. At this time, a part of the conductive wire is formed so as to be embedded in the light reflecting resin.

光反射樹脂を加熱硬化後、上記とは別のシリコーン樹脂に平均粒径6μmのYAG蛍光体を重量比で50wt%分散させて封止部材とし、これを白色系の光反射樹脂で囲まれた発光素子上に滴下(ポッティング)することで、封止する。   After heat-curing the light-reflecting resin, a YAG phosphor having an average particle diameter of 6 μm was dispersed in a weight ratio of 50 wt% in a silicone resin different from the above to form a sealing member, which was surrounded by a white-based light-reflecting resin. It seals by dripping (potting) on a light emitting element.

封止部材硬化後、更にレンズ形状を持たせたシリコーン樹脂で封止部材の表面側を覆い、、その後、図9Bの矢印の部分を、ダイシングによって分割し、基板の大きさが□3.5mmであり本発明の発光装置を得る。   After the sealing member is cured, the surface side of the sealing member is further covered with a silicone resin having a lens shape, and thereafter, the arrow portion in FIG. 9B is divided by dicing, and the size of the substrate is □ 3.5 mm. Thus, the light emitting device of the present invention is obtained.

比較として、前記実施例1に対してチタニアを分散させていない透明樹脂を光反射樹脂の代わりとして作製した発光装置の電気光学的特性を測定した結果を下記に示す。   As a comparison, the results of measuring the electro-optical characteristics of a light-emitting device produced by using a transparent resin in which titania is not dispersed as a substitute for the light-reflecting resin in Example 1 are shown below.

<表1>

Figure 2009164157
<Table 1>
Figure 2009164157

以上のように、実施例1は、光反射樹脂によって導電性ワイヤや基板の露出部が埋設されているため、透明樹脂を用いた比較例に比して、約8%高光束となった。   As described above, in Example 1, since the exposed portion of the conductive wire and the substrate was embedded by the light reflecting resin, the luminous flux was about 8% higher than that of the comparative example using the transparent resin.

<実施例2>
実施例1において、図9Aに示すように発光素子904を導体配線903A上に載置した後に、導体配線903B上に、各辺240μm角のSi(シリコン)からなる保護素子をAgペーストで載置し、この保護素子が埋設するように図9Bに示すような光反射樹脂902を設ける以外は、実施例1と同様に行い、本発明の発光素子を得る。尚、実施例2では、保護素子を載置するために導体配線903Bをやや長く(大きく)形成しておく。
<Example 2>
In Example 1, as shown in FIG. 9A, after the light emitting element 904 is placed on the conductor wiring 903A, a protective element made of Si (silicon) having a side of 240 μm square is placed on the conductor wiring 903B with Ag paste. Then, except that a light reflecting resin 902 as shown in FIG. 9B is provided so that this protective element is embedded, the light emitting element of the present invention is obtained in the same manner as in Example 1. In the second embodiment, the conductor wiring 903B is formed slightly longer (larger) in order to place the protection element.

<実施例3>
黒色系の窒化アルミ板上に、Auメッキの導体配線が施された基板を用い、各辺が1mm角の窒化物系半導体からなる発光素子1個を、AuSn共晶で接合させる。このとき、発光素子の電極は、導体配線側に向くように配置されており、導電性ワイヤを用いずに接合されている。ここで用いる発光素子は、実施例1と同様に青色系の発光波長を有する。
<Example 3>
A light emitting element made of a nitride semiconductor having a 1 mm square on each side is bonded with AuSn eutectic using a substrate on which a Au-based conductor wiring is applied on a black aluminum nitride plate. At this time, the electrodes of the light emitting elements are arranged so as to face the conductor wiring side, and are joined without using a conductive wire. The light emitting element used here has a blue emission wavelength as in the first embodiment.

次に各辺240μm角の保護素子をAgペーストで導体配線上に接合し、し各極の導体配線に金からなる導電性ワイヤで電気的結線を行う。   Next, 240 μm square protective elements are bonded onto the conductor wiring with Ag paste, and electrical connection is made to the conductor wiring of each pole with a conductive wire made of gold.

次に低粘度シリコーン樹脂に平均粒径0.25μmのチタニアを重量比で20wt%分散させた白色系樹脂(光反射樹脂)を、ディスペンサーをもちいて発光素子の周りに形成(描画)する。   Next, a white resin (light-reflecting resin) in which 20 wt% of titania having an average particle diameter of 0.25 μm is dispersed in a low-viscosity silicone resin is formed (drawn) around the light-emitting element using a dispenser.

この時の発光素子の載置面を除く全ての基板及び導体配線に光反射樹脂を形成するようにする。従って、発光素子の上面だけが露出される形となる。   At this time, the light reflecting resin is formed on all the substrates and the conductor wiring except the mounting surface of the light emitting element. Therefore, only the upper surface of the light emitting element is exposed.

この様にすることで、発光素子から出た光が黒色の基板に入射することなく上面に取り出せる。   In this way, light emitted from the light emitting element can be extracted from the upper surface without entering the black substrate.

本発明に係る発光装置は、発光素子を取り囲む光反射樹脂が、導電性ワイヤの一部を埋設するように設けられることで、光吸収を低減し、高出力化が可能な発光装置とできるため、各種表示装置、照明器具、ディスプレイ、液晶ディスプレイのバックライト光源、さらには、ファクシミリ、コピー機、スキャナ等における画像読取装置、プロジェクタ装置、などにも利用することができる。   In the light emitting device according to the present invention, since the light reflecting resin surrounding the light emitting element is provided so as to embed a part of the conductive wire, the light emitting device can reduce the light absorption and increase the output. It can also be used for various display devices, lighting fixtures, displays, backlight light sources for liquid crystal displays, and also for image reading devices, projector devices, etc. in facsimiles, copiers, scanners, and the like.

図1Aは、本発明に係る発光装置の例を示す斜視図である。FIG. 1A is a perspective view showing an example of a light emitting device according to the present invention. 図1Bは、図1Aに係る発光装置のX−X‘断面における一部断面斜視である。1B is a partial cross-sectional perspective view of the light-emitting device according to FIG. 1A taken along the line X-X ′. 図1Cは、図1Aに係る発光装置の上面図である。FIG. 1C is a top view of the light emitting device according to FIG. 1A. 図2は、本発明に係る発光装置の例を示す斜視図である。FIG. 2 is a perspective view showing an example of a light emitting device according to the present invention. 図3は、本発明に係る発光装置の例を示す一部断面斜視図である。FIG. 3 is a partial cross-sectional perspective view showing an example of the light emitting device according to the present invention. 図4Aは、本発明に係る発光装置の例を示す斜視図である。FIG. 4A is a perspective view showing an example of a light emitting device according to the present invention. 図4Bは、図4Aに係る発光装置のY−Y‘断面における断面図である。4B is a cross-sectional view taken along the line Y-Y ′ of the light-emitting device according to FIG. 4A. 図4Cは、図4Aに係る発光装置のZ−Z‘断面における断面図である。4C is a cross-sectional view taken along the line Z-Z ′ of the light emitting device according to FIG. 4A. 図5は、図4Aに係る発光装置のZ−Z‘断面における別の例を示す斜視図である。FIG. 5 is a perspective view showing another example of the light-emitting device according to FIG. 4A in the Z-Z ′ section. 図6は、本発明に係る発光装置の例を示す断面図である。FIG. 6 is a cross-sectional view showing an example of a light emitting device according to the present invention. 図7は、本発明に係る発光装置の例を示す上面図である。FIG. 7 is a top view showing an example of the light emitting device according to the present invention. 図8は、本発明に係る発光装置の例を示す上面図である。FIG. 8 is a top view showing an example of the light emitting device according to the present invention. 図9Aは、基板を分割する前の発光装置の集合体の一部を示す図であり、光反射樹脂成形前の状態を示す図であるFIG. 9A is a diagram illustrating a part of the aggregate of the light emitting device before dividing the substrate, and is a diagram illustrating a state before the light reflecting resin molding. 図9Bは、基板を分割する前の発光装置の集合体の一部を示す図であり、図9Aに加えて光反射樹脂を形成した後の状態を示す図である。FIG. 9B is a diagram illustrating a part of the aggregate of the light emitting devices before the substrate is divided, and is a diagram illustrating a state after the light reflecting resin is formed in addition to FIG. 9A.

符号の説明Explanation of symbols

100、200、300、400、500、600、700、800・・・発光装置
101、201、301、401、501、601、701、801、901・・・基板
102、202、302、402、502、502A、502B、602、・・・光反射樹脂
103A、103B、203A、303A、303B、403A、403B、703A、803A、903A、903B・・・導体配線
104、204、304、404、604、704、804、904・・・発光素子
105、205、305、405、705、805、905・・・導電ワイヤ
406、606・・・封止部材
307・・・保護素子
608・・・レンズ部材
900・・・発光装置の集合体の一部
100, 200, 300, 400, 500, 600, 700, 800 ... light emitting devices 101, 201, 301, 401, 501, 601, 701, 801, 901 ... substrates 102, 202, 302, 402, 502 , 502A, 502B, 602, ... Light reflecting resin 103A, 103B, 203A, 303A, 303B, 403A, 403B, 703A, 803A, 903A, 903B ... Conductor wiring 104, 204, 304, 404, 604, 704 , 804, 904... Light emitting elements 105, 205, 305, 405, 705, 805, 905... Conductive wires 406, 606... Sealing member 307. ..Part of light emitting device assembly

Claims (9)

導体配線が配された基板と、
該導体配線上に載置された発光素子と、
前記発光素子の周囲に配され、該発光素子からの光を反射させる光反射樹脂と、
前記導体配線と前記発光素子とを導通させる導電性ワイヤと、
を有し、
該導電性ワイヤは、少なくとも一部が前記光反射樹脂に埋設されていることを特徴とする発光装置。
A substrate on which conductor wiring is arranged;
A light emitting device placed on the conductor wiring;
A light reflecting resin disposed around the light emitting element and reflecting light from the light emitting element;
A conductive wire for conducting the conductor wiring and the light emitting element;
Have
At least a part of the conductive wire is embedded in the light reflecting resin.
導体配線が配された基板と、
該導体配線上に載置された発光素子と、
前記発光素子の周囲に配され、該発光素子からの光を反射させる光反射樹脂と
を有し、
前記基板は、導体配線から露出される露出領域を有し、
該露出領域は、少なくとも一部が前記光反射樹脂に埋設されていることを特徴とする発光装置。
A substrate on which conductor wiring is arranged;
A light emitting device placed on the conductor wiring;
A light reflecting resin that is disposed around the light emitting element and reflects light from the light emitting element;
The substrate has an exposed region exposed from the conductor wiring;
At least a part of the exposed region is embedded in the light reflecting resin.
導体配線が配された基板と、
該導体配線上に載置された発光素子と、
該導体配線上に載置された保護素子と、
前記発光素子の周囲に配され、該発光素子からの光を反射させる光反射樹脂と、を有し
前記保護素子は、少なくともその一部が前記光反射樹脂に埋設されていることを特徴とする発光装置。
A substrate on which conductor wiring is arranged;
A light emitting device placed on the conductor wiring;
A protective element placed on the conductor wiring;
A light-reflecting resin that is disposed around the light-emitting element and reflects light from the light-emitting element, wherein at least a part of the protective element is embedded in the light-reflecting resin. Light emitting device.
前記基板は、前記導体配線から露出される露出領域を有し、該露出領域の少なくとも一部が前記光反射樹脂に埋設されている請求項1又は請求項3記載の発光装置。   The light emitting device according to claim 1, wherein the substrate has an exposed region exposed from the conductor wiring, and at least a part of the exposed region is embedded in the light reflecting resin. 前記導体配線と導通される保護素子を有し、該保護素子の少なくとも一部が前記光反射樹脂に埋設されている請求項1又は請求項4記載の発光装置。   The light-emitting device according to claim 1, further comprising a protective element that is electrically connected to the conductor wiring, wherein at least a part of the protective element is embedded in the light reflecting resin. 前記光反射樹脂は、前記基板の外縁から離間する第1の領域と、前記基板の外縁と接する第2の領域とを有する請求項1〜5のいずれか1項記載の発光装置。   The light-emitting device according to claim 1, wherein the light reflecting resin includes a first region that is separated from an outer edge of the substrate and a second region that is in contact with the outer edge of the substrate. 前記第1の領域は、前記基板の一辺において、前記第2の領域に挟まれている請求項6のいずれか1項記載の発光装置   The light emitting device according to claim 6, wherein the first region is sandwiched between the second regions on one side of the substrate. 前記第2の領域は、前記基板の角部から離間する請求項6又は請求項7記載の発光装置。   The light emitting device according to claim 6, wherein the second region is separated from a corner of the substrate. 前記発光素子は、少なくとも一部が前記光反射樹脂と接触している請求項1〜8のいずれか1項記載の発光装置。   The light emitting device according to claim 1, wherein at least a part of the light emitting element is in contact with the light reflecting resin.
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Cited By (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009272369A (en) * 2008-05-01 2009-11-19 Nec Lighting Ltd Light emitting device and method of manufacturing the same
JP2011071221A (en) * 2009-09-24 2011-04-07 Stanley Electric Co Ltd Manufacturing method of semiconductor light emitting device, semiconductor light emitting device, and liquid crystal display device
JP2011071242A (en) * 2009-09-24 2011-04-07 Toshiba Lighting & Technology Corp Light emitting device and illuminating device
JP2011108744A (en) * 2009-11-13 2011-06-02 Sharp Corp Light-emitting device, and method for producing the same
JP2011134912A (en) * 2009-12-24 2011-07-07 Toshiba Lighting & Technology Corp Lighting device
JP2011151268A (en) * 2010-01-22 2011-08-04 Sharp Corp Light-emitting device
JP2011199211A (en) * 2010-03-24 2011-10-06 Kowa Denki Sangyo Kk Lighting device
WO2011129203A1 (en) * 2010-04-16 2011-10-20 日亜化学工業株式会社 Light-emitting device
WO2011129202A1 (en) * 2010-04-16 2011-10-20 日亜化学工業株式会社 Light-emitting device and manufacturing method for light-emitting device
CN102254904A (en) * 2010-05-17 2011-11-23 夏普株式会社 Light emitting device and illumination device
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JP2011258611A (en) * 2010-06-04 2011-12-22 Sharp Corp Light-emitting device
DE102010031945A1 (en) * 2010-07-22 2012-01-26 Osram Opto Semiconductors Gmbh Semiconductor device and method for manufacturing a semiconductor device
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JP2012142428A (en) * 2010-12-28 2012-07-26 Nichia Chem Ind Ltd Light-emitting device and method of manufacturing light-emitting device
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JP2013016813A (en) * 2010-03-11 2013-01-24 Panasonic Corp Light emitting module, light source device, liquid crystal display device, and manufacturing method of light emitting module
WO2013015058A1 (en) * 2011-07-25 2013-01-31 日亜化学工業株式会社 Light-emitting device
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JP2013526016A (en) * 2010-04-16 2013-06-20 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Optoelectronic device and method of manufacturing the optoelectronic device
US8500316B2 (en) 2010-02-26 2013-08-06 Toshiba Lighting & Technology Corporation Self-ballasted lamp and lighting equipment
JP2013162121A (en) * 2012-02-07 2013-08-19 Gem Weltronics Twn Corp Integrated multilayer type lighting device
JP2013207230A (en) * 2012-03-29 2013-10-07 Stanley Electric Co Ltd Light-emitting diode light emission device manufacturing method
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JP2014140076A (en) * 2014-04-17 2014-07-31 Sharp Corp Light-emitting device
JP2014179653A (en) * 2014-06-05 2014-09-25 Sharp Corp Light-emitting device
JP2014209602A (en) * 2013-03-29 2014-11-06 日亜化学工業株式会社 Light emitting device and manufacturing method of the same
US8933475B2 (en) 2010-03-11 2015-01-13 Kabushiki Kaisha Toshiba Light emitting device
JP2015092608A (en) * 2014-12-22 2015-05-14 シャープ株式会社 Light source device and lighting device
JP2015122541A (en) * 2011-05-27 2015-07-02 シャープ株式会社 Light-emitting device and illumination device
JP2016006914A (en) * 2015-10-15 2016-01-14 シャープ株式会社 Light-emitting device
US9299743B2 (en) 2011-04-20 2016-03-29 Panasonic Intellectual Property Management Co., Ltd. Light-emitting apparatus, backlight unit, liquid crystal display apparatus, and illumination apparatus
US9341318B2 (en) 2011-03-25 2016-05-17 Sharp Kabushiki Kaisha Lighting device and light source device
JP2016115897A (en) * 2014-12-18 2016-06-23 シチズン電子株式会社 Light-emitting device and method of manufacturing the same
JP2016115710A (en) * 2014-12-11 2016-06-23 シチズン電子株式会社 LED lighting device
JP2017034291A (en) * 2016-11-16 2017-02-09 シャープ株式会社 Light-emitting device
JP2017054894A (en) * 2015-09-08 2017-03-16 日亜化学工業株式会社 Light-emitting device
JP2017076765A (en) * 2015-10-17 2017-04-20 日亜化学工業株式会社 Light emitting device and manufacturing method for the same
US9698321B2 (en) 2015-08-31 2017-07-04 Panasonic Intellectual Property Management Co., Ltd. Light-emitting apparatus, illumination apparatus, and method of manufacturing light-emitting apparatus
JP2017120889A (en) * 2015-12-26 2017-07-06 日亜化学工業株式会社 Light-emitting device and manufacturing method thereof
JP2018061068A (en) * 2018-01-19 2018-04-12 日亜化学工業株式会社 Light emitting device
US9966515B2 (en) 2015-12-26 2018-05-08 Nichia Corporation Light emitting device and method of manufacturing the light emitting device
JP2018085356A (en) * 2016-11-21 2018-05-31 日亜化学工業株式会社 Method for manufacturing light-emitting device
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JP2019075400A (en) * 2017-10-12 2019-05-16 日亜化学工業株式会社 Light-emitting device
US10361344B2 (en) 2014-12-11 2019-07-23 Citizen Electronics Co., Ltd. Light emitting device
US10559722B2 (en) * 2016-04-26 2020-02-11 Citizen Electronics Co., Ltd. Light-emitting device
US10578279B2 (en) 2016-01-19 2020-03-03 Nichia Corporation Light emitting device
US10651353B2 (en) 2015-07-22 2020-05-12 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device including a reflective element
JP2020113785A (en) * 2020-03-25 2020-07-27 日亜化学工業株式会社 Light-emitting device and method for manufacturing the same
JP2020150048A (en) * 2019-03-12 2020-09-17 シチズン電子株式会社 Light-emitting device and manufacturing method thereof
JP2022543509A (en) * 2019-08-12 2022-10-13 泉州三安半導体科技有限公司 Light-emitting device, manufacturing method thereof, and display panel and lighting equipment provided with light-emitting device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242574A (en) * 1997-02-25 1998-09-11 Hitachi Ltd Semiconductor optical element
JP2002368281A (en) * 2001-06-12 2002-12-20 Citizen Electronics Co Ltd Method of manufacturing light-emitting diode
JP2004055632A (en) * 2002-07-17 2004-02-19 Toshiba Corp Semiconductor light-emitting device
WO2005020338A1 (en) * 2003-08-26 2005-03-03 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device mounting member, light-emitting diode constituting member using same, and light-emitting diode using same
JP2006093672A (en) * 2004-08-26 2006-04-06 Toshiba Corp Semiconductor light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242574A (en) * 1997-02-25 1998-09-11 Hitachi Ltd Semiconductor optical element
JP2002368281A (en) * 2001-06-12 2002-12-20 Citizen Electronics Co Ltd Method of manufacturing light-emitting diode
JP2004055632A (en) * 2002-07-17 2004-02-19 Toshiba Corp Semiconductor light-emitting device
WO2005020338A1 (en) * 2003-08-26 2005-03-03 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device mounting member, light-emitting diode constituting member using same, and light-emitting diode using same
JP2006093672A (en) * 2004-08-26 2006-04-06 Toshiba Corp Semiconductor light emitting device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009272369A (en) * 2008-05-01 2009-11-19 Nec Lighting Ltd Light emitting device and method of manufacturing the same
US8415889B2 (en) 2009-07-29 2013-04-09 Toshiba Lighting & Technology Corporation LED lighting equipment
JP2011071221A (en) * 2009-09-24 2011-04-07 Stanley Electric Co Ltd Manufacturing method of semiconductor light emitting device, semiconductor light emitting device, and liquid crystal display device
JP2011071242A (en) * 2009-09-24 2011-04-07 Toshiba Lighting & Technology Corp Light emitting device and illuminating device
US8354783B2 (en) 2009-09-24 2013-01-15 Toshiba Lighting & Technology Corporation Light-emitting device.having a frame member surrounding light-emitting elements and illumination device utilizing light-emitting device
US8998457B2 (en) 2009-09-25 2015-04-07 Toshiba Lighting & Technology Corporation Self-ballasted lamp and lighting equipment having a support portion in contact with an inner circumference of a base body
US8678618B2 (en) 2009-09-25 2014-03-25 Toshiba Lighting & Technology Corporation Self-ballasted lamp having a light-transmissive member in contact with light emitting elements and lighting equipment incorporating the same
JP2011108744A (en) * 2009-11-13 2011-06-02 Sharp Corp Light-emitting device, and method for producing the same
US9607970B2 (en) 2009-11-13 2017-03-28 Sharp Kabushiki Kaisha Light-emitting device having a plurality of concentric light transmitting areas
US9024334B2 (en) 2009-11-13 2015-05-05 Sharp Kabushiki Kaisha Light-emitting device having a plurality of concentric light transmitting areas
US9231023B2 (en) 2009-11-13 2016-01-05 Sharp Kabushiki Kaisha Light-emitting device having a plurality of concentric light transmitting areas
JP2011134912A (en) * 2009-12-24 2011-07-07 Toshiba Lighting & Technology Corp Lighting device
CN102157506A (en) * 2010-01-22 2011-08-17 夏普株式会社 Light emitting device
US9093357B2 (en) 2010-01-22 2015-07-28 Sharp Kabushiki Kaisha Light emitting device
US8723195B2 (en) 2010-01-22 2014-05-13 Sharp Kabushiki Kaisha Light emitting device with plurality of LED chips and/or electrode wiring pattern
JP2011151268A (en) * 2010-01-22 2011-08-04 Sharp Corp Light-emitting device
US9425236B2 (en) 2010-01-22 2016-08-23 Sharp Kabushiki Kaisha Light emitting device
US9312304B2 (en) 2010-01-22 2016-04-12 Sharp Kabushiki Kaisha LED illuminating device comprising light emitting device including LED chips on single substrate
US9679942B2 (en) 2010-01-22 2017-06-13 Sharp Kabushiki Kaisha Light emitting device
US9966367B2 (en) 2010-01-22 2018-05-08 Sharp Kabushiki Kaisha Light emitting device
US8500316B2 (en) 2010-02-26 2013-08-06 Toshiba Lighting & Technology Corporation Self-ballasted lamp and lighting equipment
US9261246B2 (en) 2010-03-11 2016-02-16 Panasonic Intellectual Property Management Co., Ltd. Light-emitting module, light source device, liquid crystal display device, and method of manufacturing light-emitting module
JP5716010B2 (en) * 2010-03-11 2015-05-13 株式会社東芝 Light emitting device
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US8933475B2 (en) 2010-03-11 2015-01-13 Kabushiki Kaisha Toshiba Light emitting device
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US9601669B2 (en) 2011-04-20 2017-03-21 Panasonic Intellectual Property Management Co., Ltd. Light-emitting apparatus, backlight unit, liquid crystal display apparatus, and illumination apparatus
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US10361344B2 (en) 2014-12-11 2019-07-23 Citizen Electronics Co., Ltd. Light emitting device
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JP2016006914A (en) * 2015-10-15 2016-01-14 シャープ株式会社 Light-emitting device
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US10403803B2 (en) 2015-12-26 2019-09-03 Nichia Corporation Light emitting device and method of manufacturing the light emitting device
JP2018142724A (en) * 2015-12-26 2018-09-13 日亜化学工業株式会社 Light-emitting device and manufacturing method for light-emitting device
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US10559722B2 (en) * 2016-04-26 2020-02-11 Citizen Electronics Co., Ltd. Light-emitting device
JP2017034291A (en) * 2016-11-16 2017-02-09 シャープ株式会社 Light-emitting device
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