JPH1027953A - Manufacturing method of member for transferring and member for transferring - Google Patents
Manufacturing method of member for transferring and member for transferringInfo
- Publication number
- JPH1027953A JPH1027953A JP19694696A JP19694696A JPH1027953A JP H1027953 A JPH1027953 A JP H1027953A JP 19694696 A JP19694696 A JP 19694696A JP 19694696 A JP19694696 A JP 19694696A JP H1027953 A JPH1027953 A JP H1027953A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- transfer
- mask pattern
- transfer member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Printing Methods (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は多層プリント配線板
等の製造に好適な、導電性基板上にパターン化された導
電層等からなる転写層を高精度で転写することができる
転写用部材とその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transfer member suitable for manufacturing a multilayer printed wiring board and the like, which can transfer a transfer layer composed of a patterned conductive layer or the like on a conductive substrate with high precision. It relates to the manufacturing method.
【０００２】[0002]
【従来の技術】半導体技術の飛躍的な発展により、半導
体パッケージの小型化、多ピン化、ファインピッチ化、
電子部品の極小化などが急速に進み、いわゆる高密度実
装の時代に突入した。それに伴って、プリント配線板も
片面配線から両面配線へ、さらに多層化、薄型化が進め
られている。2. Description of the Related Art Due to the rapid development of semiconductor technology, semiconductor packages have been reduced in size, the number of pins has been increased, the fine pitch has been increased.
The miniaturization of electronic components has rapidly progressed, and the era of so-called high-density mounting has entered. Along with this, printed wiring boards have been further multilayered and thinned from single-sided wiring to double-sided wiring.
【０００３】現在、プリント配線板の銅パターンの形成
には、主としてサブトラクティブ法と、アディティブ法
が用いられている。At present, a subtractive method and an additive method are mainly used for forming a copper pattern on a printed wiring board.
【０００４】サブトラクティブ法は、銅張り積層板に穴
を開けた後に、穴の内部と表面に銅メッキを行い、フォ
トエッチングによりパターンを形成する方法である。こ
のサブトラクティブ法は技術的に完成度が高く、またコ
ストも安いが、銅箔の厚さ等による制約から微細パター
ンの形成は困難である。[0004] The subtractive method is a method in which a hole is formed in a copper-clad laminate, and then the inside and the surface of the hole are plated with copper, and a pattern is formed by photoetching. Although this subtractive method is technically highly complete and inexpensive, it is difficult to form a fine pattern due to restrictions such as the thickness of the copper foil.
【０００５】一方、アディティブ法は無電解メッキ用の
触媒を含有した積層板上の回路パターン形成部以外の部
分にレジストを形成し、積層板の露出している部分に無
電解銅メッキ等により回路パターンを形成する方法であ
る。このアディティブ法は、微細パターンの形成が可能
であるが、コスト、信頼性の面で難がある。On the other hand, in the additive method, a resist is formed in a portion other than a circuit pattern forming portion on a laminate containing an electroless plating catalyst, and a circuit is formed on an exposed portion of the laminate by electroless copper plating or the like. This is a method of forming a pattern. Although the additive method can form a fine pattern, it is difficult in terms of cost and reliability.
【０００６】多層基板の場合には、上記の方法等で作製
した片面あるいは両面のプリント配線板を、ガラス布に
エポキシ樹脂等を含浸させた半硬化状態のプリプレグと
一緒に加圧積層する方法が用いられている。この場合、
プリプレグは各層の接着剤の役割をなし、層間の接続は
スルーホールを作成し、内部に無電解メッキ等を施して
行っている。In the case of a multi-layer substrate, a method of laminating a single-sided or double-sided printed wiring board produced by the above method or the like together with a semi-cured prepreg obtained by impregnating a glass cloth with an epoxy resin or the like is used. Used. in this case,
The prepreg serves as an adhesive for each layer, and a connection between the layers is made by forming a through-hole and applying an electroless plating or the like to the inside.
【０００７】また、高密度実装の進展により、多層基板
においては薄型、軽量化と、その一方で単位面積当りの
高い配線能力が要求され、一層当たりの基板の薄型化、
層間の接続や部品の搭載方法等に工夫がなされている。Further, with the progress of high-density mounting, a multilayer substrate is required to be thin and light, and on the other hand, a high wiring capacity per unit area is required.
The connection between layers, the mounting method of components, and the like are devised.
【０００８】しかしながら、上記のサブトラクティブ法
により作製された両面プリント配線板を用いた多層基板
の作製は、両面プリント配線板の穴形成のためのドリル
加工の精度と、微細化限界の面から高密度化に限界があ
り、製造コストの低減も困難であった。However, the production of a multilayer substrate using the double-sided printed wiring board manufactured by the above-described subtractive method requires high precision in drilling for forming holes in the double-sided printed wiring board and the limit of miniaturization. There is a limit in increasing the density, and it has been difficult to reduce the manufacturing cost.
【０００９】一方、近年では上述のような要求を満たす
ものとして、基材上に導体パターン層と絶縁層とを順次
積層して作製される多層配線板が開発されている。この
多層配線板は、銅メッキ層のフォトエッチングと感光性
樹脂のパターニングを交互に行って作製されるため、高
精細な配線と任意の位置での層間接続が可能となってい
る。On the other hand, in recent years, a multilayer wiring board manufactured by sequentially laminating a conductor pattern layer and an insulating layer on a base material has been developed to satisfy the above-mentioned requirements. Since this multilayer wiring board is manufactured by alternately performing photoetching of the copper plating layer and patterning of the photosensitive resin, high-definition wiring and interlayer connection at an arbitrary position are possible.
【００１０】しかしながら、この方式では銅メッキとフ
ォトエッチングを交互に複数回行うため、工程が煩雑と
なり、また、基板上に１層づつ積み上げる直列プロセス
のため、中間工程でトラブルが発生すると、製品の再生
が困難となり、製造コストの低減に支障を来していた。However, in this method, copper plating and photo-etching are performed alternately a plurality of times, which complicates the process. In addition, if a trouble occurs in an intermediate process due to a series process of stacking one layer on a substrate, Reproduction becomes difficult, which hinders reduction in manufacturing cost.
【００１１】このような問題点を解決するために、基板
上に配線パターン層を形成した転写用原版を作製し、こ
れを導電性基板に圧着し、配線パターン層を導電性基板
に転写する操作を繰り返して多層プリント配線板を製造
する方法が提案されている。この方法では、図３に模式
的に示されるように転写用原版を作製する際に、導電性
基板１上にレジストでマスクパターン層４′を形成し
（図３（Ａ））、非マスク層５をエッチングし（図３
（Ｂ））、エッチング部６に電着によって絶縁性層７を
形成させ（図３（Ｃ））、その後にマスクパターン層
４′を除去し（図３（Ｄ））、図４に示されるように導
電性基板１上の裸出した部分８に電着によって導電性層
２及び粘接着性絶縁層３を順に形成させるものである。In order to solve such a problem, a transfer master having a wiring pattern layer formed on a substrate is prepared, this is pressed onto a conductive substrate, and the wiring pattern layer is transferred onto the conductive substrate. Have been proposed to manufacture a multilayer printed wiring board. In this method, when a transfer master is produced as schematically shown in FIG. 3, a mask pattern layer 4 'is formed with a resist on the conductive substrate 1 (FIG. 3 (A)), and a non-mask layer is formed. 5 (FIG. 3)
(B)), an insulating layer 7 is formed on the etched portion 6 by electrodeposition (FIG. 3C), and thereafter, the mask pattern layer 4 'is removed (FIG. 3D), as shown in FIG. As described above, the conductive layer 2 and the adhesive and adhesive insulating layer 3 are sequentially formed on the exposed portion 8 on the conductive substrate 1 by electrodeposition.
【００１２】エッチング層に形成する絶縁性層の厚さに
よって得られる転写用原版は、平版、凸版及び凹版と称
されるが、模式的に図３に示されるようにいずれの場合
も導電層２及び粘接着性絶縁層３の形状はきのこ状（か
まぼこ状）となり、直角四辺形の形状とすることが困難
であるとともに、転写が安定しない（転写率が変動す
る）、線太りする（ 該絶縁層の電着は束縛のない状態で
行われるので、生成する該絶縁層の側面がうねった形状
となる）、高周波印加時のインピーダンス特性等の電気
特性が不安定となる、あるいは該絶縁層が転写時に線幅
よりも広がってしまう等の問題がある。また、導電性基
板はエッチングされているので、転写後の導電性基板を
再使用することができないために製造コスト低減に支障
を来す等の問題もあり、改善が要望されている。The thickness of the insulating layer formed on the etching layer depends on the thickness of the insulating layer.
The transfer masters thus obtained are called planographic, letterpress and intaglio.
However, in either case, as schematically shown in FIG.
Also, the shapes of the conductive layer 2 and the adhesive adhesive layer 3 are mushroom-shaped (or
It is difficult to form a right-angled quadrilateral.
And the transfer is not stable (the transfer rate fluctuates).
), Thickening ( Electrodeposition of the insulating layer is free
So that the side surface of the insulating layer to be formed has a wavy shape
), Electricity such as impedance characteristics when applying high frequency
The characteristics become unstable or the insulating layer becomes
There is a problem that it spreads out. In addition, conductive groups
Since the plate is etched, the conductive substrate after transfer
Difficult to reduce manufacturing cost because it cannot be reused
There is also a problem such as coming up, and improvement is demanded.
【発明が解決しようとする課題】本発明はこのような実
情のもとになされたものであって、本発明の目的は、基
材の再利用が可能であり、転写層を高精度に転写するこ
とができる転写用部材および転写層を常に一定の形状
に、安定的に形成することができる該転写部材の製造方
法を提供することにある。SUMMARY OF THE INVENTION The present invention has been made under such circumstances, and an object of the present invention is to enable reuse of a substrate and transfer a transfer layer with high precision. It is an object of the present invention to provide a method for manufacturing a transfer member capable of constantly and stably forming a transfer member and a transfer layer that can be formed in a constant shape.
【００１３】[0013]
【課題を解決するための手段】上記の目的は以下の本発
明によって達成される。即ち、本発明は、少なくとも表
面に導電性を備える基板上に、（１）電気絶縁性のマス
クパターンを形成する工程、（２）該基板上の非マスク
部に導電層を形成する工程、（３）該導電層上に粘接着
性絶縁性層を形成する工程及び（４）該基板上の該マス
クパターンを除去する工程を順次行い、該基板上にパタ
ーン化された絶縁層及びその上に形成された粘接着性絶
縁層からなる転写層を形成させることを特徴とする転写
用部材の製造方法及びこの方法で得られる転写用部材で
ある。The above object is achieved by the present invention described below. That is, the present invention provides (1) a step of forming an electrically insulating mask pattern on a substrate having at least a surface having conductivity, (2) a step of forming a conductive layer on a non-mask portion on the substrate, 3) a step of forming an adhesive-insulating layer on the conductive layer; and (4) a step of removing the mask pattern on the substrate. A method for producing a transfer member, comprising forming a transfer layer comprising an adhesive and adhesive layer formed on the transfer member, and a transfer member obtained by the method.
【００１４】[0014]
【作用】本発明では、導電性基板上に形成させるマスク
パターンを、非マスク部に形成させる導電層及び粘接着
性絶縁層からなる転写層の厚さよりも厚く形成すること
によって、転写層の断面形状を直角四辺形の一定な形状
とすることができる。また、転写層形成後にマスクパタ
ーンは除去されるので、本発明の転写用部材を用いるこ
とによって、転写層を精度よく、且つ安定した転写率で
転写することができる。According to the present invention, the mask pattern formed on the conductive substrate is formed to be thicker than the transfer layer formed of the conductive layer and the adhesive / insulating layer formed on the non-mask portion. The cross-sectional shape can be a constant rectangular quadrangle. Further, since the mask pattern is removed after the transfer layer is formed, the transfer layer can be accurately transferred at a stable transfer rate by using the transfer member of the present invention.
【００１５】[0015]
【発明の実施の形態】次に発明の好ましい実施形態を挙
げて本発明をさらに詳細に説明する。本発明の転写用部
材における導電性基板は、少なくとも表面が導電性を有
するものであればいずれでもよく、例えば、アルミニウ
ム、銅、ニッケル、鉄、ステンレス、チタン等の導電性
の金属板、あるいはガラス板、ポリエステル、ポリカー
ボネート、ポリイミド、ポリエチレン、アクリル樹脂等
の高分子材料のフィルム等の絶縁性基板の表面に導電性
薄膜を形成したもの等を使用することができる。Next, the present invention will be described in more detail with reference to preferred embodiments of the present invention. The conductive substrate in the transfer member of the present invention may be any substrate as long as at least the surface has conductivity, for example, a conductive metal plate such as aluminum, copper, nickel, iron, stainless steel, titanium, or glass. An insulating substrate such as a plate, a film of a polymer material such as polyester, polycarbonate, polyimide, polyethylene, acrylic resin or the like, on which a conductive thin film is formed, or the like can be used.
【００１６】このような導電性基板の厚さは特に制限さ
れないが、通常、０．０５〜１．０ｍｍ程度が好まし
い。また、以下に説明する最後の工程で導電性基板表面
のマスクパターンを除去する工程で、導電層が導電性基
板から剥離することを防止するために、該基板は適度な
表面粗度を有していることが好ましく、０．０５〜０．
５μｍ程度の粗度（表面触針式断差計で測定）を有する
導電性基材の使用が好ましい。Although the thickness of such a conductive substrate is not particularly limited, it is usually preferably about 0.05 to 1.0 mm. Further, in the step of removing the mask pattern on the surface of the conductive substrate in the last step described below, in order to prevent the conductive layer from peeling off from the conductive substrate, the substrate has an appropriate surface roughness. It is preferably 0.05 to 0.
It is preferable to use a conductive base material having a roughness of about 5 μm (measured with a surface stylus type inflation meter).
【００１７】本発明の転写用部材は、以下の（１）から
（４）の工程を順次経ることによって製造される。図１
及び図２を参照して転写部材の製造方法について説明す
る。本発明の転写部材は図１に模式的に示されるよう
に、導電性基板１の表面に任意のパターンの導電層２と
その上に積層した粘接着性絶縁層３からなる転写層が形
成されたものである。The transfer member of the present invention is manufactured by sequentially performing the following steps (1) to (4). FIG.
A method for manufacturing a transfer member will be described with reference to FIGS. The transfer member of the present invention, as schematically shown in FIG. 1, has a transfer layer comprising a conductive layer 2 having an arbitrary pattern and an adhesive / insulating layer 3 laminated thereon on the surface of a conductive substrate 1. It was done.
【００１８】本発明の転写部材を製造するために、先
ず、工程（１）で導電性基板表面に、転写すべき任意の
パターンの転写層を形成するための電気絶縁性のマスク
パターンを形成する。電気絶縁性のマスクパターンの形
成は、通常フォトレジストを用いて行うが、最後の工程
（４）で導電性基板表面から該マスクパターンを溶解除
去する際に、導電層上の絶縁層が除去されることを防止
するうえからポジ型レジストを使用することが好まし
い。ポジ型レジストは従来公知のものが使用可能であ
り、特に限定されない。In order to manufacture the transfer member of the present invention, first, in step (1), an electrically insulating mask pattern for forming a transfer layer of an arbitrary pattern to be transferred is formed on the surface of the conductive substrate. . The formation of the electrically insulating mask pattern is usually performed using a photoresist, but when the mask pattern is dissolved and removed from the surface of the conductive substrate in the last step (4), the insulating layer on the conductive layer is removed. It is preferable to use a positive resist from the viewpoint of preventing the occurrence of such a problem. A conventionally known positive resist can be used, and is not particularly limited.
【００１９】図２（Ａ）に示されるように、導電性基板
１の表面に公知の方法でフォトレジスト層４を形成す
る。所定パターンのフォトマスクを介してフォトレジス
ト層４に紫外線を照射し、露光・現像する。かくして、
図２（Ｂ）に示されるように導電性基板１の表面に所定
パターンのマスクパターン４′及び非マスク部５が形成
される。その際、マスクパターンを下記の転写層の厚さ
よりも厚く形成することによって、転写層の断面形状を
直角四辺形の一定した形状とすることができる。As shown in FIG. 2A, a photoresist layer 4 is formed on the surface of the conductive substrate 1 by a known method. The photoresist layer 4 is irradiated with ultraviolet rays through a photomask having a predetermined pattern, and is exposed and developed. Thus,
As shown in FIG. 2B, a mask pattern 4 'of a predetermined pattern and a non-mask portion 5 are formed on the surface of the conductive substrate 1. At this time, by forming the mask pattern thicker than the thickness of the transfer layer described below, the cross-sectional shape of the transfer layer can be made a constant rectangular quadrangle.
【００２０】次いで、工程（２）において、図２（Ｃ）
に示されるように非マスク部５に電着により導電層２を
形成する。電着による導電層の形成は公知のメッキ法に
従って行われ、導電層を形成する材料は、電着法で導電
性薄膜が形成されるものであれば特に制限はなく、例え
ば、銅、銀、金、ニッケル、クロム、亜鉛、錫あるいは
白金等が挙げられる。また、電着に際しては、導電層の
導電性基板からの剥離を容易にするために、予め、非マ
スク部に導電性を疎外しない剥離層を形成しておくこと
ができる。Next, in step (2), FIG.
As shown in (2), the conductive layer 2 is formed on the non-mask portion 5 by electrodeposition. The formation of the conductive layer by electrodeposition is performed according to a known plating method, and the material for forming the conductive layer is not particularly limited as long as a conductive thin film is formed by the electrodeposition method.For example, copper, silver, Examples include gold, nickel, chromium, zinc, tin, and platinum. In addition, at the time of electrodeposition, in order to facilitate separation of the conductive layer from the conductive substrate, a separation layer that does not impede the conductivity can be formed in the non-mask portion in advance.
【００２１】工程（３）では、図２（Ｄ）に示されるよ
うに、上記の導電層２の表面に電着法で粘接着性絶縁層
３が形成される。電着法は、電着塗装として従来から用
いられている方法が原形であり、イオン性の被膜形成材
料を含有する電着液を用いて行われる。本発明における
電着は公知の電着法に従って行われる。電着液に含有さ
れる絶縁層を形成する材料は、常温あるいは加熱により
粘接着性を示す電着可能な物質であれば使用可能であ
り、例えば、イオン性高分子化合物が代表的である。In step (3), as shown in FIG. 2D, an adhesive insulating layer 3 is formed on the surface of the conductive layer 2 by an electrodeposition method. The electrodeposition method is based on a method conventionally used as electrodeposition coating, and is performed using an electrodeposition solution containing an ionic film-forming material. Electrodeposition in the present invention is performed according to a known electrodeposition method. The material for forming the insulating layer contained in the electrodeposition liquid can be used as long as it is an electrodepositable substance exhibiting an adhesive property at room temperature or by heating, for example, an ionic polymer compound is typical. .
【００２２】電着液に含有される絶縁性電着樹脂層を形
成するイオン性高分子化合物としては、例えば、天然系
樹脂、アクリル系樹脂、ポリエステル系樹脂、アルキッ
ド系樹脂、マレイン化油系樹脂、ポリブタジエン系樹
脂、エポキシ系樹脂、ポリアミド系樹脂、ポリイミド系
樹脂等が挙げられる。アニオン性高分子化合物はカルボ
キシル基等のアニオン性基を有するものが、カチオン性
高分子化合物はアミノ基等のカチオン性基を有するもの
が用いられる。本発明においては、絶縁被膜に要求され
る性能に従って最適なイオン性高分子化合物を適宜選択
すればよく、イオン性高分子化合物は特に制限されな
い。また、必要に応じてこれらのイオン性高分子化合物
とともに、ロジン系、テルペン系、石油樹脂系等の粘着
付与剤を使用することもできる。Examples of the ionic polymer compound forming the insulating electrodeposition resin layer contained in the electrodeposition liquid include natural resins, acrylic resins, polyester resins, alkyd resins, and maleated oil resins. , Polybutadiene resin, epoxy resin, polyamide resin, polyimide resin and the like. As the anionic polymer compound, one having an anionic group such as a carboxyl group is used, and as the cationic polymer compound, one having a cationic group such as an amino group is used. In the present invention, the optimum ionic polymer compound may be appropriately selected according to the performance required for the insulating film, and the ionic polymer compound is not particularly limited. If necessary, a rosin-based, terpene-based, or petroleum-based tackifier may be used together with these ionic polymer compounds.
【００２３】上記の高分子化合物は、アルカリ性物質ま
たは酸性物質によって中和して水に可溶化された状態
で、あるいは水分散状態で電着に供される。アニオン性
高分子化合物は、例えば、トリメチルアミン、ジエチル
アミン、ジメチルエタノールアミン等のアミン類、アン
モニア、苛性カリ等の無機のアルカリで中和する。カチ
オン性高分子化合物は、例えば、酢酸、蟻酸、プロピオ
ン酸、乳酸等の酸で中和する。The above-mentioned polymer compound is subjected to electrodeposition in a state where it is neutralized by an alkaline substance or an acidic substance and solubilized in water, or in a water-dispersed state. The anionic polymer compound is neutralized with, for example, amines such as trimethylamine, diethylamine, and dimethylethanolamine, and inorganic alkalis such as ammonia and potassium hydroxide. The cationic polymer compound is neutralized with an acid such as acetic acid, formic acid, propionic acid, and lactic acid.
【００２４】最後の工程（４）では、以上の工程を経た
導電性基板１表面のマスクパターン４′が除去される。
マスクパターンはフォトレジストで形成されているの
で、フォトレジスト用の通常の現像液を用いて溶解除去
される。前記のように、マスクパターンをポジ型フォト
レジストで形成した場合には、本工程におけるマスクパ
ターンの除去の際に絶縁層３が剥離されることが防止さ
れる。ポジ型フォトレジストの現像液としては、例え
ば、弱アルカリ性液が使用される。In the last step (4), the mask pattern 4 'on the surface of the conductive substrate 1 after the above steps is removed.
Since the mask pattern is formed of a photoresist, the mask pattern is dissolved and removed using a normal developing solution for the photoresist. As described above, when the mask pattern is formed of a positive photoresist, the insulating layer 3 is prevented from being peeled when the mask pattern is removed in this step. As the developer for the positive photoresist, for example, a weak alkaline liquid is used.
【００２５】以上の（１）から（４）の工程を経ること
によって図１に模式的に示される本発明の転写用部材が
製造される。By performing the above steps (1) to (4), the transfer member of the present invention schematically shown in FIG. 1 is manufactured.
【００２６】[0026]
【実施例】以下に実施例及び比較例を挙げて本発明をさ
らに具体的に説明する。特に断りのない限り以下では部
及び％は重量基準である。The present invention will be described more specifically below with reference to examples and comparative examples. In the following, parts and percentages are by weight unless otherwise specified.
【００２７】実施例１ ＳＵＳ３０４の薄板（表面粗度約０．１μｍ）を導電性
基板として転写用部材を以下の工程により作製した。 （１）マスクパターンの形成 上記の基板上にポジ型フォトレジスト（東京応化工業
（株）製 ＰＭＥＲ Ｐ−ＡＲ９００）を約２０μｍの
厚さに塗布し、８０℃のホットプレート上で１０分間乾
燥した。その後、所定のパターンを有するマスクを用
い、下記条件で露光を行い、次いで弱アルカリ性現像液
（東京応化工業（株）製 Ｐ−６Ｇ）で現像してマスク
パターンを形成させた。Example 1 A transfer member was manufactured by the following steps using a thin plate of SUS304 (surface roughness: about 0.1 μm) as a conductive substrate. (1) Formation of a mask pattern A positive photoresist (PMER P-AR900, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied on the above substrate to a thickness of about 20 μm, and dried on a hot plate at 80 ° C. for 10 minutes. . Thereafter, exposure was performed using a mask having a predetermined pattern under the following conditions, and then development was performed with a weak alkaline developer (P-6G manufactured by Tokyo Ohka Kogyo Co., Ltd.) to form a mask pattern.
【００２８】露光条件 密着露光機：大日本スクリーン製造（株）製 Ｐ−２０
２−Ｇを使用 真空引き ：６０秒 露光時間 ：４００カウント Exposure conditions Contact exposure machine: P-20 manufactured by Dainippon Screen Mfg. Co., Ltd.
Use 2-G Vacuum: 60 seconds Exposure time: 400 counts
【００２９】（２）導電層の形成 上記のマスクパターン層を形成した導電性基板を含燐銅
電極と対向させて下記の組成の硫酸銅めっき浴中に浸漬
し、該導電性基板を直流電源の陽極に、該電極を陰極に
それぞれ接続し、５Ａ／ｄｍ2 の電流密度で１０分間通
電した。その結果、該導電性基板のフォトレジストで覆
われていない非マスク部上に厚さ１０μｍの銅めっき薄
膜からなる導電層が形成された。(2) Formation of conductive layer The conductive substrate on which the above-mentioned mask pattern layer was formed was immersed in a copper sulfate plating bath having the following composition while facing the phosphorous-containing copper electrode. And the electrode was connected to the cathode, and a current density of 5 A / dm 2 was applied for 10 minutes. As a result, a conductive layer made of a copper plating thin film having a thickness of 10 μm was formed on the non-mask portion of the conductive substrate which was not covered with the photoresist.
【００３０】 硫酸銅めっき浴の組成（水１リットル中の） ＣｕＳＯ4・５Ｈ2 Ｏ ２００ｇ Ｈ2ＳＯ4 ５０ｇ ＨＣｌ ０．１５ｍｌ（Ｃｌとして６０ｐｐｍ）Composition of copper sulfate plating bath (in 1 liter of water) CuSO 4 .5H 2 O 200 g H 2 SO 4 50 g HCl 0.15 ml (60 ppm as Cl)
【００３１】（３）粘接着性絶縁層の形成 （ｉ）電着液の調製 ブチルアクリレート１３．２部、メチルメタアクリレー
ト１．６部、ジビニルベンゼン０．２部とを重合開始剤
として過硫酸カリウム１％水溶液８５部を用い、乳化剤
を使用せずに８０℃で５時間乳化重合し、部分架橋ブチ
ルアクリレート／メチルメタアクリレート共重合体のエ
マルジョンを得た。上記のエマルジョン６５部、電着担
体としてのカルボキシル基含有アクリル系共重合体樹脂
２部、ヘキサメトキシメラミン０．８５部、中和剤とし
てのトリメチルアミン０．３５部、エタノール３部、ブ
チルセルソルブ３部及びイオン交換水１８．８部を混合
攪拌し、粘接着性絶縁層形成用の電着液を調製した。 （ｉｉ）電着 （２）で作製した導電層を有する導電性基板を白金電極
と対向させて上記の電着液中に浸漬し、該導電性基板を
直流電源の陽極に、白金電極を陰極にそれぞれ接続し、
３０Ｖの電圧で１分間の電着を行い、導電層の上に厚さ
１０μｍの上記共重合体からなる粘接着性絶縁層を形成
させた。(3) Formation of Adhesive Insulating Layer (i) Preparation of Electrodepositing Solution 13.2 parts of butyl acrylate, 1.6 parts of methyl methacrylate and 0.2 part of divinylbenzene were used as polymerization initiators. Using 85 parts of a 1% aqueous solution of potassium sulfate, emulsion polymerization was performed at 80 ° C. for 5 hours without using an emulsifier to obtain an emulsion of a partially crosslinked butyl acrylate / methyl methacrylate copolymer. 65 parts of the above emulsion, 2 parts of a carboxyl group-containing acrylic copolymer resin as an electrodeposition carrier, 0.85 parts of hexamethoxymelamine, 0.35 parts of trimethylamine as a neutralizing agent, 3 parts of ethanol, 3 parts of butyl cellosolve 3 And 18.8 parts of ion-exchanged water were mixed and stirred to prepare an electrodeposition solution for forming an adhesive adhesive layer. (Ii) Electrodeposition The conductive substrate having the conductive layer prepared in (2) is immersed in the above electrodeposition solution facing the platinum electrode, and the conductive substrate is used as an anode of a DC power supply, and the platinum electrode is used as a cathode. Connected to
Electrodeposition was performed at a voltage of 30 V for 1 minute to form a 10-μm-thick adhesive-insulating layer made of the above copolymer on the conductive layer.
【００３２】（４）マスクパターンの除去 （３）の工程終了後、乾燥せずに引き続き、粘接着性絶
縁層を形成した導電性基板上のマスクパターンを（１）
の場合と同じ条件で露光した。その後８０℃で１５分乾
燥させた。これは、（３）の工程終了時に乾燥を行うと
マスクパターンが硬化し、またマスクパターン中には可
塑剤が混入されているので、これが揮散することによっ
てマスクパターンに乱れを生じ、マスクパターン層の除
去が困難となるだけでなく、マスクパターンの除去時に
導電層や絶縁層に影響が及ぶことを避けるためである。
乾燥後、（１）で使用した現像液を用いてマスクパター
ン層を溶解除去し、本発明の転写用部材を得た。しかし
ながら、上記と同じ（１）〜（３）の工程で転写層を形
成し。工程（４）のマスクパターンの除去にアセトンを
使用した場合には該絶縁層の消失、導電層の剥離が生じ
良好な転写用部材は得られなかった。また、（３）の工
程終了後に上記の条件で乾燥を行ってから（４）の工程
を行ったが、該絶縁層の消失、導電層の剥離が生じ良好
な転写用部材は得られなかった。(4) Removal of mask pattern After completion of the step (3), the mask pattern on the conductive substrate on which the adhesive and adhesive insulating layer is formed is continuously dried without drying.
Exposure was performed under the same conditions as in Thereafter, drying was performed at 80 ° C. for 15 minutes. This is because if the mask pattern is dried at the end of the step (3), the mask pattern is hardened, and a plasticizer is mixed in the mask pattern. This is not only to make it difficult to remove but also to avoid affecting the conductive layer and the insulating layer when removing the mask pattern.
After drying, the mask pattern layer was dissolved and removed using the developer used in (1) to obtain a transfer member of the present invention. However, the transfer layer was formed in the same steps (1) to (3) as above. When acetone was used to remove the mask pattern in the step (4), the insulating layer disappeared and the conductive layer was peeled off, and no good transfer member was obtained. Further, after the step (3) was completed, drying was performed under the above conditions, and then the step (4) was performed. However, the insulating layer disappeared and the conductive layer was peeled off, and a good transfer member was not obtained. .
【００３３】（５）転写 以上の工程で得られた転写用部材を厚さ２５μｍのポリ
イミドフィルム上に、８０℃、圧力１０ｋｇｆ／ｃｍ2
の条件で圧着し、剥離して転写を行ったところ、パター
ンは全て転写された。また、転写後の導電性基板を用い
て上記の（１）〜（４）による転写用部材の作製、転写
を繰り返したが、いずれの場合も転写率に変化は見られ
ず、導電性基板の再利用が可能であることが立証され
た。(5) Transfer The transfer member obtained in the above steps was placed on a 25 μm thick polyimide film at 80 ° C. under a pressure of 10 kgf / cm 2.
When the pattern was pressed and peeled off under the conditions described above and transferred, the entire pattern was transferred. Further, the production and transfer of the transfer member according to the above (1) to (4) were repeated using the conductive substrate after the transfer, but no change was observed in the transfer rate in any case, and the transfer of the conductive substrate was not performed. It has proven to be reusable.
【００３４】比較例１ 工程（１）でネガ型フォトレジスト（東京応化工業
（株）製 ＯＭＲ−８５）及び該フォトレジスト用現像
液（東京応化工業（株）製 ＯＭＲ現像液）を使用し、
工程（４）でマスクパターンの除去を１００℃の剥離液
（東京応化工業（株）製 クリーンストリップ）に浸漬
することによって行う以外は実施例１と同様にして転写
用部材を作製したが、工程（４）で該絶縁層の消失、導
電層の剥離が生じ、良好な転写用部材は得られなかっ
た。Comparative Example 1 In step (1), a negative photoresist (OMR-85 manufactured by Tokyo Ohka Kogyo Co., Ltd.) and a developer for the photoresist (OMR developer manufactured by Tokyo Oka Kogyo Co., Ltd.) were used.
A transfer member was prepared in the same manner as in Example 1 except that in step (4), the mask pattern was removed by immersion in a 100 ° C. stripper (Clean Strip manufactured by Tokyo Ohka Kogyo Co., Ltd.). In (4), the insulating layer disappeared and the conductive layer peeled off, and a good transfer member could not be obtained.
【００３５】[0035]
【発明の効果】以上の本発明によれば、転写層の断面形
状は直角四辺形の一定した形状とすることができ、高精
度且つ安定した転写率で転写層の転写が可能である。ま
た、転写後の導電性基板は転写用部材の基板として繰り
返し使用が可能であるので、転写用部材の製造コストの
低減も可能である。According to the present invention described above, the cross-sectional shape of the transfer layer can be a constant rectangular quadrangle, and the transfer layer can be transferred with high accuracy and a stable transfer rate. Further, since the conductive substrate after the transfer can be used repeatedly as a substrate of the transfer member, the manufacturing cost of the transfer member can be reduced.
【図１】 本発明の転写用部材を説明する概略図であ
る。FIG. 1 is a schematic diagram illustrating a transfer member of the present invention.
【図２】 本発明の転写用部材の製造方法を説明する概
略図である。FIG. 2 is a schematic view illustrating a method for manufacturing a transfer member of the present invention.
【図３】 従来法による転写用部材の製造工程を説明す
る概略図である。FIG. 3 is a schematic diagram illustrating a process for manufacturing a transfer member according to a conventional method.
【図４】 従来法による転写用部材を説明する概略図で
ある。FIG. 4 is a schematic view illustrating a transfer member according to a conventional method.
１：導電性基板 ２：導電層 ３：粘接着性絶縁層 ４：フォトレジスト層 ４′：マスクパターン層 ５：非マスク層 ６：エッチング部 ７：絶縁性層 ８：導電性基板の裸出部 1: conductive substrate 2: conductive layer 3: adhesive / insulating layer 4: photoresist layer 4 ': mask pattern layer 5: non-mask layer 6: etched portion 7: insulating layer 8: bare conductive substrate Department
Claims (6)
に、（１）電気絶縁性のマスクパターンを形成する工
程、（２）該基板上の非マスク部に導電層を形成する工
程、（３）該導電層上に粘接着性絶縁性層を形成する工
程及び（４）該基板上の該マスクパターンを除去する工
程を順次行い、該基板上にパターン化された導電層及び
その上に形成された粘接着性絶縁性層からなる転写層を
形成させることを特徴とする転写用部材の製造方法。1. A step of (1) forming an electrically insulating mask pattern on a substrate having at least a surface having conductivity, (2) a step of forming a conductive layer on a non-mask portion on the substrate, (3) A) a step of forming an adhesive-insulating layer on the conductive layer, and (4) a step of removing the mask pattern on the substrate in order. The conductive layer patterned on the substrate and A method for producing a transfer member, comprising forming a transfer layer comprising the formed adhesive and adhesive layer.
用いて行う請求項１に記載の転写用部材の製造方法。2. The method according to claim 1, wherein the step (1) is performed using a positive resist.
で行う請求項１又は２に記載の転写用部材の製造方法。3. The method for manufacturing a transfer member according to claim 1, wherein the steps (2) and (3) are performed by an electrodeposition method.
前記の（４）の工程を行い、その後に乾燥させる請求項
１〜３のいずれか１項に記載の転写用部材の製造方法。4. The method of manufacturing a transfer member according to claim 1, wherein after the step (2) is completed, the step (4) is performed without drying, and then drying is performed. Method.
μｍである請求項１〜４のいずれか１項に記載の転写用
部材の製造方法。5. A substrate having a surface roughness of 0.05 to 0.5.
The method for producing a transfer member according to claim 1, wherein the thickness is μm.
法で製造されたことを特徴とする転写用部材。6. A transfer member produced by the method according to claim 1. Description:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19694696A JP3828205B2 (en) | 1996-07-09 | 1996-07-09 | Method for manufacturing transfer member and transfer member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19694696A JP3828205B2 (en) | 1996-07-09 | 1996-07-09 | Method for manufacturing transfer member and transfer member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1027953A true JPH1027953A (en) | 1998-01-27 |
| JP3828205B2 JP3828205B2 (en) | 2006-10-04 |
Family
ID=16366295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19694696A Expired - Lifetime JP3828205B2 (en) | 1996-07-09 | 1996-07-09 | Method for manufacturing transfer member and transfer member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3828205B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008168478A (en) * | 2007-01-10 | 2008-07-24 | Toppan Printing Co Ltd | Printing letterpress and manufacturing method of printing letterpress |
| JP2009038409A (en) * | 2000-10-18 | 2009-02-19 | Nec Corp | Method of manufacturing semiconductor package |
-
1996
- 1996-07-09 JP JP19694696A patent/JP3828205B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009038409A (en) * | 2000-10-18 | 2009-02-19 | Nec Corp | Method of manufacturing semiconductor package |
| JP2008168478A (en) * | 2007-01-10 | 2008-07-24 | Toppan Printing Co Ltd | Printing letterpress and manufacturing method of printing letterpress |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3828205B2 (en) | 2006-10-04 |
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