JPH10267858A - Method for judging defect of glass substrate - Google Patents
Method for judging defect of glass substrateInfo
- Publication number
- JPH10267858A JPH10267858A JP9020497A JP9020497A JPH10267858A JP H10267858 A JPH10267858 A JP H10267858A JP 9020497 A JP9020497 A JP 9020497A JP 9020497 A JP9020497 A JP 9020497A JP H10267858 A JPH10267858 A JP H10267858A
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- JP
- Japan
- Prior art keywords
- defect
- intensity
- area
- detected
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、欠陥検査装置に
より検出されたガラス基板の各欠陥が、無害であるか有
害であるかの良否の判定方法に関する。The present invention relates to a method for determining whether each defect of a glass substrate detected by a defect inspection apparatus is harmless or harmful.
【０００２】[0002]
【従来の技術】液晶パネルの構成要素のＴＦＴ基板は、
ガラス基板を素材としてその表面に多数のＴＦＴ素子が
マトリックス状に形成される。素材のガラス基板の表面
に傷などの欠陥が存在すると、ＴＦＴ素子の形成が良好
になされず、従ってＴＦＴ基板の品質が低下するので、
欠陥検査装置により欠陥の有無が検査されている。この
表面に存在する欠陥（表面欠陥）は、ＴＦＴ素子の形成
に不都合であるが、裏面に存在する欠陥（裏面欠陥）は
液晶パネルの映像に多少影響する程度であり。このよう
に表面欠陥と裏面欠陥の影響は相違するので、ガラス基
板の品質管理上これらを識別する必要があり、この出願
人により、特願平８−８７０５０号「ガラス基板の表裏
欠陥識別方法」が特許出願されている。以下その実施例
を図３により説明する。2. Description of the Related Art A TFT substrate which is a component of a liquid crystal panel includes:
A large number of TFT elements are formed in a matrix on the surface of a glass substrate. If a defect such as a scratch is present on the surface of the glass substrate of the material, the TFT element cannot be formed well, and the quality of the TFT substrate deteriorates.
The presence or absence of a defect is inspected by a defect inspection device. The defects existing on the front surface (surface defects) are inconvenient for the formation of the TFT element, but the defects existing on the rear surface (back surface defects) have only a slight effect on the image of the liquid crystal panel. As described above, since the influences of the surface defect and the back surface defect are different, it is necessary to identify these in view of quality control of the glass substrate. Has filed a patent application. The embodiment will be described below with reference to FIG.
【０００３】図３は、上記の実施例における欠陥検査装
置を示し、ガラス基板１に対して欠陥検出光学系２とデ
ータ処理部３とを設けて構成される。欠陥検出光学系２
の投光系21は、レーザ光源211 が発生するレーザビーム
ＬTは、集束レンズ212 と円筒レンズ213 により光帯ＬB
に集束されてガラス基板１の表面Ｈに投射され、さら
に表面で屈折して裏面Ｒにも投射される。光帯ＬB ’
は、付図に示すように、Ｘ方向の幅ｗとＹ方向の長さｌ
を有し、表面Ｈと裏面Ｒにおける位置はＸ方向に間隔ｄ
だけ離れている。FIG. 3 shows a defect inspection apparatus according to the above embodiment, which comprises a glass substrate 1 provided with a defect detection optical system 2 and a data processing section 3. Defect detection optical system 2
Light projecting system 21, the laser beam L T to the laser light source 211 is generated, the optical band L B by focusing lens 212 and cylindrical lens 213
And is projected on the front surface H of the glass substrate 1 and further refracted on the front surface and projected on the back surface R. Light band L B '
Is a width w in the X direction and a length l in the Y direction, as shown in the attached drawing.
And the position on the front surface H and the back surface R is a distance d in the X direction.
Just away.
【０００４】ガラス基板１は、図示しない移動機構によ
りＸ方向に幅ｗづつステップ移動し、さらにＹ方向に長
さｌづつ移動して、表裏の全面が光帯ＬB によりそれぞ
れ走査され、この走査により表面欠陥ＫH と裏面欠陥Ｋ
R が散乱するの散乱光ＬRH，ＬRRは、受光系22の結像レ
ンズ221 によりＣＣＤイメージセンサ（以下単にＣＣ
Ｄ）222 に受光され、表面欠陥ＫH と裏面欠陥ＫR の映
像が、複数の素子ｅよりなる素子群ｅH,ｅR にそれぞれ
結像される。この場合、光帯ＬB のサイズは欠陥ＫH,Ｋ
R より大きいので、これら以外の部分の表面Ｈと裏面Ｒ
は光帯ＬB をそれぞれ正反射して、受光系22に設けたミ
ラーＭにより反射されて受光系22のフォーカス制御に使
用されるので、結像レンズ221 とＣＣＤ222 には入射し
ない。[0004] Glass substrate 1 is moved a width w at a time step in the X direction by a moving mechanism (not shown), moves further length l increments in the Y direction, the front and back of the entire surface is scanned respectively by the optical band L B, the scanning Surface defect K H and back surface defect K
The scattered light L RH , L RR scattered by R is converted by the imaging lens 221 of the light receiving system 22 into a CCD image sensor (hereinafter simply referred to as CC).
D) 222 is received, the image of the surface defects K H and the rear surface defects K R is the element group composed of a plurality of elements e e H, are respectively imaged on e R. In this case, the size of the light band L B is defective K H, K
R , the front surface H and the back surface R
Is an optical band L B regularly reflected respectively, so is reflected by the mirror M which is provided on the light receiving system 22 is used for focus control of the light receiving system 22, it does not enter the imaging lens 221 and CCD222.
【０００５】光帯ＬB の走査に従って、各素子群が逐次
に出力する複数のパルス信号ｐは、データ処理部３のＡ
／Ｄ変換器31によりデジタル信号ｐD とされて、画像メ
モリ31の各素子ｅの位置に対応するアドレスのセルに記
憶される。データ処理部３のＭＰＵ32には、表裏識別Ｐ
Ｇ（プログラム）とデータ編集ＰＧが設定され、表裏識
別ＰＧは画像メモリ31のセルに記憶されている各デジタ
ル信号ｐD を読出して、セルのアドレスにより表面欠陥
ＫH に対するパルス群ｐDHと、裏面欠陥ＫR にパルス群
ｐDRとに区別し、これらはデータ編集ＰＧにより別個に
編集されて、それぞれの欠陥データＤH,ＤR がプリンタ
33によりマップ表示される。[0005] In accordance with the scanning band of light L B, a plurality of pulse signals p for each element group is output sequentially, the data processing unit 3 A
It is converted into a digital signal p D by the / D converter 31 and stored in the cell of the image memory 31 at the address corresponding to the position of each element e. The MPU 32 of the data processing unit 3 has a front / back identification P
G (program) and data editing PG are set, side ID PG is reads the digital signals p D stored in a cell of the image memory 31, and the pulse group p DH to surface defects K H by the address of the cell, The back surface defect K R is distinguished from the pulse group p DR , which is separately edited by the data editing PG, and the respective defect data D H , D R are printed by the printer.
The map is displayed by 33.
【０００６】[0006]
【発明が解決しようとする課題】さて、ガラス基板１の
表面と裏面に存在する欠陥Ｋには、形状の異なる多種類
があり、また同一種類でも大きさにより、ＴＦＴ素子の
形成などに影響する程度はさまざまである。これに対し
て、影響しない無害な（良）欠陥と影響の大きい有害な
（不良）欠陥とを区別することが重要である。しかし上
記の欠陥検査装置は、表面欠陥ＫH と裏面欠陥ＫR とを
識別するのみで、良否は区別されない。この発明は、上
記に鑑みてなされたもので、ガラス基板の表面または裏
面の欠陥の良否を判定することを課題とする。There are many types of defects K present on the front and back surfaces of the glass substrate 1 having different shapes, and even the same type affects the formation of TFT elements depending on the size. To varying degrees. On the other hand, it is important to distinguish between harmless (good) defects that do not affect and harmful (bad) defects that have a large effect. But above defect inspection apparatus, only identifies a surface defect K H and the rear surface defects K R, quality is not distinguished. The present invention has been made in view of the above, and has as its object to determine the quality of a defect on a front surface or a back surface of a glass substrate.
【０００７】[0007]
【課題を解決するための手段】この発明はガラス基板の
欠陥の良否判定方法であって、ＣＣＤイメージセンサの
各素子が出力する、各欠陥の複数のパルス信号を合成し
て合成信号を作成する。各合成信号の強度を算出し、算
出した強度が一定の強度以上の合成信号を検出し、それ
未満の強度の合成信号をカットする強度閾値と、各合成
信号より各欠陥の面積を算出し、算出された面積が一定
の面積以上の欠陥を検出し、それ未満の面積の欠陥をカ
ットする面積閾値とを設定する。強度閾値で検出された
強度を有し、かつ面積閾値で検出された面積を有する欠
陥を不良と判定し、該両閾値でともに検出されない欠陥
を良と判定するものである。SUMMARY OF THE INVENTION The present invention relates to a method for judging the quality of a defect on a glass substrate. The method comprises the steps of synthesizing a plurality of pulse signals of each defect output from each element of a CCD image sensor to create a synthesized signal. . Calculate the intensity of each synthesized signal, detect the synthesized signal whose calculated intensity is equal to or higher than a certain intensity, calculate the intensity threshold value for cutting the synthesized signal of lower intensity and the area of each defect from each synthesized signal, A defect whose calculated area is equal to or larger than a predetermined area is detected, and an area threshold value for cutting a defect having an area smaller than that is set. A defect having the intensity detected by the intensity threshold and having the area detected by the area threshold is determined to be defective, and a defect not detected by both thresholds is determined to be good.
【０００８】[0008]
【発明の実施の形態】まず、この発明の発明者によりな
された、各種の欠陥サンプルに対する実験とその結果
を、図１により説明する。この実験においては、テスト
用のガラス基板の表面に、８個の良欠陥のサンプルと、
１０個の不良欠陥のサンプルとを形成し、このガラス基
板をテスト装置に装着して光帯ＬB を投射し、各欠陥サ
ンプルのそれぞれの散乱光を、ＣＣＤイメージセンサの
複数の素子ｅに結像させ、これらが出力する各欠陥サン
プルごとの複数のパルス信号ｐを合成して合成信号を作
成し、各合成信号の強度を測定し、さらに各欠陥サンプ
ルの面積を算出した。測定した信号強度（ｍｖ単位）を
横軸、算出した欠陥面積（μｍ2 単位）を縦軸とし、良
欠陥を○印、不良欠陥を×印として、これらの分布を表
すと図１がえられた。図１をみると、×印は信号強度が
２００ｍｖ以上、欠陥面積が５０００μｍ2以上の範囲
内にすべてが分布している。一方○印はこの範囲内に３
個あり、５個は信号強度が２００ｍｖ未満、欠陥面積が
５０００μｍ2 未満の範囲内にある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, experiments and results of various kinds of defect samples performed by the inventor of the present invention will be described with reference to FIG. In this experiment, eight good defect samples were placed on the surface of a test glass substrate,
And 10 defective defective samples, and forming the glass substrate by projecting light band L B was attached to the test apparatus, each of the scattered light of each defect sample, a plurality of elements e of the CCD image sensor An image was formed, a plurality of pulse signals p for each of the defect samples output from the images were combined to create a combined signal, the intensity of each combined signal was measured, and the area of each defective sample was calculated. When the measured signal intensity (in mv) is plotted on the abscissa, the calculated defect area (in μm 2 ) is plotted on the ordinate, good defects are marked with ○, and defective defects are marked with x, the distribution is shown in FIG. Was. Referring to FIG. 1, all of the x marks are distributed within a range where the signal intensity is 200 mv or more and the defect area is 5000 μm 2 or more. On the other hand, ○ mark is within this range.
And 5 have a signal intensity of less than 200 mv and a defect area of less than 5000 μm 2 .
【０００９】いま、図に点線で示すように、２００ｍｖ
を信号強度に対する強度閾値とし、５０００μｍ2 を欠
陥面積に対する面積閾値とし、この両閾値により欠陥を
検出すると、不良欠陥は両閾値以上の範囲内ですべて検
出され、良欠陥もこの範囲内で３０％程度が検出され
る。また両閾値未満では不良欠陥は検出されず、良欠陥
は７０％程度が検出される。不良欠陥は是非とも検出す
べきであるが、良欠陥はもし検出されても、やむをえな
いとすることができるので、欠陥検査装置にこのような
両閾値を設定することは、欠陥の良否の判定の有効な手
段と考えられる。Now, as shown by a dotted line in FIG.
Is used as an intensity threshold value for signal intensity, and 5000 μm 2 is used as an area threshold value for a defect area. When defects are detected using both threshold values, all defective defects are detected within the range of both threshold values or more, and good defects are also 30% within this range. The degree is detected. If the threshold value is less than both threshold values, no defective defect is detected, and about 70% of good defects are detected. Defective defects should be detected by all means, but if good defects are detected, it can be unavoidable, so setting both such thresholds in a defect inspection device is It is considered an effective means.
【００１０】ただし、上記の強度閾値の２００ｍｖと面
積閾値の５０００μｍ2 は、小数の欠陥サンプルに対す
るテスト数値の一例であり、これらはそのまま任意の欠
陥検査装置に適用できない。上記の欠陥検査装置におい
ては、光帯ＬB の強度は投光系21の仕様規格により異な
り、また各素子ｅが出力するパルス信号の強度は、受光
系22の仕様規格により異なるので、適用する欠陥検査装
置に対して、適切な強度閾値と個数閾値を決めることが
必要である。また表面欠陥と裏面欠陥とは、前記したよ
うに、ガラス基板に対する影響の程度が相違するので、
両者に対して適切な両閾値をそれぞれ設定することが望
ましい。However, the intensity threshold of 200 mv and the area threshold of 5000 μm 2 are examples of test numerical values for a small number of defect samples, and cannot be applied to any defect inspection apparatus as they are. In the defect inspection apparatus, the intensity of the light band L B varies depending on the standard specification of the light projecting system 21, the strength of the pulse signal each element e is output is different by design specifications of the light receiving system 22, apply It is necessary to determine appropriate intensity thresholds and number thresholds for the defect inspection apparatus. Also, as described above, the surface defect and the back surface defect have different degrees of influence on the glass substrate,
It is desirable to set both thresholds appropriate for both.
【００１１】この発明においては、欠陥検査装置に対し
て適切な強度閾値と面積閾値が設定され、ＣＣＤイメー
ジセンサの各素子が出力するパルス信号は、欠陥ごとに
合成されて合成信号とされ、各合成信号の強度が算出さ
れて強度閾値に比較され、一定の強度以上の合成信号が
検出され、それ未満の強度の合成信号はカットされる。
また、各合成信号より各欠陥の面積が算出されて面積閾
値に比較され、一定の面積以上の欠陥は検出され、それ
未満の欠陥はカットされる。強度閾値で検出された強度
を有し、かつ面積閾値で検出された面積を有する欠陥は
不良と判定され、両閾値でともに検出されない欠陥は良
と判定される。ただし、良欠陥はカットされるのでその
データは出力されない。In the present invention, appropriate intensity thresholds and area thresholds are set for the defect inspection apparatus, and the pulse signals output from the respective elements of the CCD image sensor are combined for each defect to form a combined signal. The strength of the combined signal is calculated and compared with an intensity threshold, a combined signal having a certain strength or higher is detected, and a combined signal having a lower strength is cut off.
Further, the area of each defect is calculated from each synthesized signal and compared with the area threshold, a defect having a certain area or more is detected, and a defect having a smaller area is cut. A defect having the intensity detected by the intensity threshold and having the area detected by the area threshold is determined to be defective, and a defect not detected by both thresholds is determined to be good. However, since the good defect is cut, the data is not output.
【００１２】[0012]
【実施例】図２は、この発明を適用した欠陥検査装置１
０の一実施例の要部を示す。欠陥検査装置１０は、図３
に示した欠陥検査装置のＭＰＵ32に対して、画像処理プ
ログラム（ＰＧ）と、それぞれ２組の強度算出ＰＧ、面
積算出ＰＧ、良否判定ＰＧとを付加して構成され、図示
上側の１組は表面欠陥ＫH に対応し、その良否判定ＰＧ
には表面欠陥ＫH に対する適切な強度閾値Ｋs と面積閾
値Ｓs を設定し、下側の１組は裏面欠陥ＫR に対応し、
その良否判定ＰＧには裏面欠陥ＫR に対する適切な強度
閾値Ｋs’と面積閾値Ｓs’を設定する。FIG. 2 shows a defect inspection apparatus 1 to which the present invention is applied.
0 shows an essential part of one embodiment. FIG. 3 shows the defect inspection apparatus 10.
Is configured by adding an image processing program (PG) and two sets of intensity calculation PG, area calculation PG, and pass / fail judgment PG to the MPU 32 of the defect inspection apparatus shown in FIG. PG corresponding to defect K H
, An appropriate intensity threshold value K s and an area threshold value S s for the surface defect K H are set, and the lower set corresponds to the back surface defect K R ,
In the pass / fail judgment PG, an appropriate intensity threshold K s ′ and an area threshold S s ′ for the back surface defect K R are set.
【００１３】以下、欠陥検査装置１０における欠陥の良
否判定手順を説明する。従来と同様に、ガラス基板１の
両面を光帯ＬB により走査して、ＣＣＤ222 の複数の素
子ｅが、各欠陥ごとに出力する複数のパルス信号ｐは、
データ処理部３のＡ／Ｄ変換器31によりデジタル信号ｐ
D とされ、画像メモリ31の対応するアドレスのセルに記
憶され、これらは表裏識別ＰＧにより読出されて、表面
欠陥ＫHに対するパルス群ｐDHと、裏面欠陥ＫR にパル
ス群ｐDRとに区別されて出力される。A procedure for determining the quality of a defect in the defect inspection apparatus 10 will be described below. As in the prior art, the both surfaces of the glass substrate 1 is scanned by the optical band L B, a plurality of pulse signals p plurality of elements e are to be output for each defect CCD222 is
The digital signal p is output by the A / D converter 31 of the data processing unit 3.
Is as D, stored in the cell of the corresponding address of the image memory 31, they are distinguished is read by side ID PG, and pulse group p DH to surface defects K H, the rear surface defects K R in the pulse group p DR Is output.
【００１４】この発明では、両パルス群ｐDH，ｐDRを画
像処理ＰＧにより処理し、それぞれの複数のパルスを合
成して合成信号ＧH,ＧR を作成する。合成信号ＧH は、
図示上側の強度算出ＰＧと面積算出ＰＧにより、強度Ｋ
H と欠陥面積ＳH が算出され、ついで、これらは良否判
定ＰＧにより強度閾値Ｋs と面積閾値Ｓs にそれぞれ比
較される。ＫH ≧Ｋs ，ＳH ≧Ｓs のときは、この表面
欠陥ＫH は不良と判定されて欠陥データＤH が出力さ
れ、ＫH ＜Ｋs ，ＳH ＜Ｓs のときは良と判定されてデ
ータは出力されない。合成信号ＧR も同様に処理され、
算出された強度Ｋ R と欠陥面積ＳR が良否判定ＰＧによ
り強度閾値Ｋs’と面積閾値Ｓs’にそれぞれ比較され、
ＫR ≧Ｋs’，ＳR ≧Ｓs’のときは、この裏面欠陥ＫH
は不良と判定されて欠陥データＤH が出力され、Ｋ＜Ｋ
s’，Ｓ＜Ｓs’のときは良と判定されてデータは出力さ
れない。以上によりえられた両欠陥データＤH,ＤR は、
従来と同様に、データ編集ＰＧにより編集されてプリン
タ34によりマップ表示される。In the present invention, both pulse groups pDH, PDRDrawing
Processing is performed by the image processing PG, and a plurality of respective pulses are combined.
To generate a composite signal GH, GR Create Composite signal GH Is
The strength K is calculated by the strength calculation PG and the area calculation PG on the upper side of the figure.
H And defect area SH Are calculated, and then these are judged
Intensity threshold K by constant PGs And area threshold Ss To each
Are compared. KH ≧ Ks , SH ≧ Ss When this surface
Defect KH Is determined to be defective and the defect data DH Is output
And KH <Ks , SH <Ss Is judged to be good and
No data is output. Composite signal GR Is processed in the same way,
Calculated intensity K R And defect area SR Is determined by the pass / fail judgment PG
Strength threshold Ks'And the area threshold Ss’Respectively,
KR ≧ Ks’, SR ≧ Ss’, The back surface defect KH
Is determined to be defective and the defect data DH Is output, and K <K
s’, S <Ss’Is judged as good and the data is output.
Not. Both defect data D obtained as described aboveH, DR Is
As before, the data is edited by the data editing PG and printed.
The map is displayed by the data 34.
【００１５】[0015]
【発明の効果】以上の説明のとおり、この発明の良否判
定方法は、欠陥検査装置に強度閾値と個数閾値とを設定
し、両閾値により、ガラス基板の表面に形成されるＴＦ
Ｔ素子や液晶パネルの映像などに有害な不良欠陥を、ほ
ぼ確実に検出してその欠陥データを出力するものて、ガ
ラス基板の品質管理に寄与する効果には大きいものがあ
る。As described above, according to the pass / fail judgment method of the present invention, the strength threshold and the number threshold are set in the defect inspection apparatus, and the TF formed on the surface of the glass substrate is set by the two thresholds.
A defect that is harmful to a T element or a liquid crystal panel image and the like is almost certainly detected and its defect data is output, and there is a great effect that contributes to quality control of a glass substrate.
【図１】図１は、欠陥サンプルに対する実験によりえら
れた不良欠陥と良欠陥の分布図である。FIG. 1 is a distribution diagram of defective defects and good defects obtained by experiments on defective samples.
【図２】図２は、この発明を適用した欠陥検査装置の要
部の構成図である。FIG. 2 is a configuration diagram of a main part of a defect inspection apparatus to which the present invention is applied.
【図３】図３は、表裏欠陥識別機能を有する欠陥検査装
置の構成図である。FIG. 3 is a configuration diagram of a defect inspection apparatus having a front / back defect identification function.
１…ガラス基板、２…欠陥検出光学系、21…投光系、21
1 …レーザ光源、212 …集束レンズ、213 …円筒レン
ズ、22…受光系、221 …結像レンズ、222 …ＣＣＤイメ
ージセンサ、３…データ処理部、31…Ａ／Ｄ変換器、32
…画像メモリ、33…ＭＰＵ、34…プリンタ、Ｈ…ガラス
基板の表面、Ｒ…同裏面、ＫH …表面欠陥、ＫR …裏面
欠陥、ＬT …レーザビーム、ＬB …光帯、ＬRH…表面欠
陥の散乱光、ＬRR…裏面欠陥の散乱光、ｅ…ＣＣＤの素
子、ｐ…パルス信号、ｐD …デジタル信号、ＧH,ＧR …
合成信号、ＫH,ＫR …合成信号の強度、ＳH,ＳR …欠陥
面積、Ｋs …強度閾値、Ｓs …面積閾値、ＰＧ…ＭＰＵ
のプログラム、ＤH,ＤR …欠陥データ。DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 2 ... Defect detection optical system, 21 ... Projection system, 21
1 laser light source, 212 focusing lens, 213 cylindrical lens, 22 light receiving system, 221 imaging lens, 222 CCD image sensor, 3 data processing unit, 31 A / D converter, 32
... image memory, 33 ... MPU, 34 ... printer, H ... surface of the glass substrate, R ... the backside, K H ... surface defects, K R ... rear surface defects, L T ... laser beam, L B ... light band, L RH ... scattered light of surface defects, L RR ... of the back surface defects scattered light, e ... CCD elements, p ... pulse signals, p D ... digital signal, G H, G R ...
Synthesized signal, K H , K R ... intensity of synthesized signal, S H , S R ... defect area, K s ... intensity threshold, S s ... area threshold, PG ... MPU
, D H , D R ... Defect data.
Claims (1)
投射し、該ガラス基板の表面または裏面に存在する各種
の欠陥の散乱光をＣＣＤイメージセンサに受光して、該
各欠陥の映像を複数の素子に結像し、該各素子が出力す
るパルス信号を処理して該各欠陥を検出する欠陥検査装
置において、該各欠陥の複数のパルス信号を合成して合
成信号を作成し、該各合成信号の強度を算出し、該算出
した強度が一定の強度以上の合成信号を検出し、それ未
満の強度の合成信号をカットする強度閾値と、該各合成
信号より各欠陥の面積を算出し、算出した面積が一定の
面積以上の欠陥を検出し、それ未満の面積の欠陥をカッ
トする面積閾値とを設定し、該強度閾値で検出された強
度を有し、かつ該面積閾値で検出された面積を有する欠
陥を不良と判定し、該両閾値でともに検出されない欠陥
を良と判定することを特徴とする、ガラス基板の欠陥の
良否判定方法。A luminous flux is projected onto a glass substrate for a liquid crystal panel, and scattered light of various defects existing on the front surface or the rear surface of the glass substrate is received by a CCD image sensor, and an image of each defect is formed. In a defect inspection apparatus that forms an image on a plurality of elements and processes the pulse signals output from the respective elements to detect the respective defects, a composite signal is created by synthesizing a plurality of pulse signals of the respective defects. Calculate the intensity of each composite signal, detect the composite signal whose calculated intensity is equal to or higher than a certain intensity, and calculate the intensity threshold for cutting the composite signal of lower intensity and the area of each defect from each composite signal. Then, the calculated area is detected as a defect having a certain area or more, and an area threshold for cutting a defect having a smaller area is set, and the intensity has the intensity detected at the intensity threshold, and is detected at the area threshold. The defect having the specified area is determined to be defective. And judging a defect is not detected together with the both threshold and good, quality determination method of the defect of the glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9020497A JPH10267858A (en) | 1997-03-25 | 1997-03-25 | Method for judging defect of glass substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9020497A JPH10267858A (en) | 1997-03-25 | 1997-03-25 | Method for judging defect of glass substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10267858A true JPH10267858A (en) | 1998-10-09 |
Family
ID=13991969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9020497A Pending JPH10267858A (en) | 1997-03-25 | 1997-03-25 | Method for judging defect of glass substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10267858A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006023296A (en) * | 2004-06-11 | 2006-01-26 | Nippon Electric Glass Co Ltd | Sorting method for plate glass for flat panel display, plate glass for flat panel display, and manufacturing method therefor |
| EP2166344A1 (en) * | 2004-11-24 | 2010-03-24 | Asahi Glass Company, Limited | Defect inspection method and apparatus for transparent plate materials |
| KR20110097182A (en) * | 2010-02-25 | 2011-08-31 | 가부시끼가이샤 야마나시 기쥬쯔 고오보오 | Alien substance inspection apparatus and inspection method |
| JP2011203081A (en) * | 2010-03-25 | 2011-10-13 | Fujifilm Corp | Defect inspection device |
| KR20180055993A (en) * | 2016-11-17 | 2018-05-28 | 삼성디스플레이 주식회사 | Detecting method for defect of glass substrate |
-
1997
- 1997-03-25 JP JP9020497A patent/JPH10267858A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006023296A (en) * | 2004-06-11 | 2006-01-26 | Nippon Electric Glass Co Ltd | Sorting method for plate glass for flat panel display, plate glass for flat panel display, and manufacturing method therefor |
| JP4618426B2 (en) * | 2004-06-11 | 2011-01-26 | 日本電気硝子株式会社 | Flat glass plate sorting method and manufacturing method |
| EP2166344A1 (en) * | 2004-11-24 | 2010-03-24 | Asahi Glass Company, Limited | Defect inspection method and apparatus for transparent plate materials |
| US7796248B2 (en) | 2004-11-24 | 2010-09-14 | Asahi Glass Company, Limited | Defect inspection method and apparatus for transparent plate-like members |
| KR20110097182A (en) * | 2010-02-25 | 2011-08-31 | 가부시끼가이샤 야마나시 기쥬쯔 고오보오 | Alien substance inspection apparatus and inspection method |
| JP2011203081A (en) * | 2010-03-25 | 2011-10-13 | Fujifilm Corp | Defect inspection device |
| KR20180055993A (en) * | 2016-11-17 | 2018-05-28 | 삼성디스플레이 주식회사 | Detecting method for defect of glass substrate |
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