JPH10125710A - Wire bonding - Google Patents
Wire bondingInfo
- Publication number
- JPH10125710A JPH10125710A JP31251996A JP31251996A JPH10125710A JP H10125710 A JPH10125710 A JP H10125710A JP 31251996 A JP31251996 A JP 31251996A JP 31251996 A JP31251996 A JP 31251996A JP H10125710 A JPH10125710 A JP H10125710A
- Authority
- JP
- Japan
- Prior art keywords
- lead wire
- wire
- bonding
- lead
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本願発明はワイヤボンディング方
法に係り、詳細には第1の導体と第2の導体との間に複
数本のリード細線を効率的にワイヤボンディングする方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method, and more particularly, to a method for efficiently wire bonding a plurality of lead wires between a first conductor and a second conductor.
【0002】[0002]
【従来の技術】例えば、図1に示すように、半導体素子
(チップ)(1)上の電極(2)とインナーリード
(3)のボンディングパッド(4)との間に複数のリー
ド細線を(5)をワイヤボンディングしたいことがあ
る。この場合、従来では、図示のように電極(2)とボ
ンディングパッド(4)との間に複数本のリード細線
(5)を互いに並行に接続していた。2. Description of the Related Art For example, as shown in FIG. 1, a plurality of fine wires are formed between an electrode (2) on a semiconductor element (chip) (1) and a bonding pad (4) of an inner lead (3). 5) There is a case where it is desired to perform wire bonding. In this case, conventionally, a plurality of lead wires (5) are connected in parallel between the electrode (2) and the bonding pad (4) as shown in the figure.
【0003】[0003]
【解決すべき課題】しかしながら、図1に示すようなワ
イヤボンディングによると、チップ(1)の電極(2)
およびインナーリード(3)のボンディングパッド
(4)が必然的に大面積化し、導体材料(電極材料、リ
ードフレーム材料)のコストが増加し、製品の低コスト
化の妨げとなる。また、ワイヤボンダのキャピラリの引
き回し(移動)も複雑化し、生産性が悪かった。However, according to the wire bonding shown in FIG. 1, the electrode (2) of the chip (1)
In addition, the area of the bonding pad (4) of the inner lead (3) is inevitably increased, and the cost of the conductor material (electrode material, lead frame material) increases, which hinders cost reduction of the product. In addition, the routing (movement) of the capillary of the wire bonder was complicated, and the productivity was poor.
【0004】そこで、本発明は、チップ上の電極面積や
インナーリードのボンディングパッド面積の増大を抑え
て、複数のリード細線を効率よくワイヤボンディングす
る方法を提供することを目的とする。Accordingly, an object of the present invention is to provide a method for efficiently wire bonding a plurality of lead wires while suppressing an increase in the area of electrodes on a chip and the area of bonding pads for inner leads.
【0005】[0005]
【課題を解決するための手段】上記目的を達成するため
の本発明は、第1の導体と第2の導体との間にリード細
線を接続するワイヤボンディング方法において、第1の
導体の一方の主面に第1のリード細線の一端をボールボ
ンディングする第1の工程と、第2の導体の一方の主面
に前記第1のリード細線の他端をウェッジボンディング
する第2の工程と、前記第2の導体の一方の主面に前記
第1のリード線のウェッジボンディング部分に重ねて第
2のリード細線の一端をボールボンディングする第3の
工程と、前記第1の導体の一方の主面に前記第1のリー
ド細線のボールボンディング部分から第1の方向に離間
した位置において前記第2のリード細線の他端をウェッ
ジボンディングする第4の工程と、前記第1の導体の一
方の主面に前記第2のリード細線のウェッジボンディン
グ部分に重ねて第3のリード細線の一端をボールボンデ
ィングする第5の工程と、前記第2の導体の主面に前記
第1のリード細線のウェッジボンディング部分から前記
第1の方向に離間した位置において前記第3のリード細
線の他端をウェッジボンディングすることで前記第3の
リード細線を前記第1のリード細線と平行にワイヤボン
ディングする第6の工程とを備えたことを特徴とするワ
イヤボンディング方法に係わるものである。なお、請求
項2に示すように、前記第1のリード細線の前記第2の
リード細線に対する角度と、前記第3のリード細線の前
記第2のリード細線に対する角度とを等しく且つその角
度を10〜30度にすることが望ましい。According to the present invention, there is provided a wire bonding method for connecting a thin lead wire between a first conductor and a second conductor. A first step of ball bonding one end of a first thin lead wire to a main surface, a second step of wedge bonding the other end of the first thin lead wire to one main surface of a second conductor, A third step of ball-bonding one end of a second thin lead wire on one main surface of the second conductor so as to overlap a wedge bonding portion of the first lead wire, and one main surface of the first conductor; A fourth step of wedge bonding the other end of the second thin lead wire at a position separated in a first direction from a ball bonding portion of the first thin lead wire, and one main surface of the first conductor The second A fifth step of ball-bonding one end of the third lead wire over the wedge bonding portion of the thin lead wire, and the first wire from the wedge bonding portion of the first lead wire to the main surface of the second conductor. A step of wedge-bonding the other end of the third lead wire at a position separated in the direction of (a) to wire-bond the third lead wire in parallel with the first lead wire. And a wire bonding method characterized by the following. As described in claim 2, the angle of the first thin lead wire with respect to the second thin lead wire is equal to the angle of the third thin lead wire with respect to the second thin lead wire, and the angle is equal to 10 degrees. It is desirable to set it to 30 degrees.
【0006】[0006]
【発明の作用及び効果】各請求項の発明によれば、前工
程で接続されたリード細線のウェッジボンディング部分
に次のリード細線のボールボンディング部分を重ねて接
続するので、リード細線の接続部分の面積が減少する。
また、第1のリード細線と第3のリード細線が平行に接
続され、第2のリード細線が第1のリード細線と第3の
リード細線の間の領域に接続されるので、上記接続部分
の面積の減少と相俟ってチップの電極やインナーリード
のボンディングパッドの面積の増大が抑制される。ま
た、ワイヤボンダのキャピラリを第1の導体−第2の導
体−第1の導体−第2の導体へと連続的に移動させてワ
イヤボンディングできるので、キャピラリを複雑に移動
させることなしに複数のリード細線を一連の工程で連続
的に接続できるので、作業性の良い効率的なワイヤボン
ディングが可能となる。According to the invention of each claim, the ball bonding portion of the next lead wire is overlapped and connected to the wedge bonding portion of the lead wire connected in the previous step, so that the connection portion of the lead wire is formed. The area is reduced.
Further, the first and third lead wires are connected in parallel, and the second lead wire is connected to a region between the first and third lead wires. In conjunction with the reduction in the area, the increase in the area of the chip electrodes and the bonding pads of the inner leads is suppressed. In addition, since the wire bonding can be performed by continuously moving the capillary of the wire bonder from the first conductor to the second conductor to the first conductor to the second conductor, the plurality of leads can be moved without complicatedly moving the capillary. Since thin wires can be continuously connected in a series of steps, efficient wire bonding with good workability is possible.
【0007】[0007]
【実施例】次に、図2〜図12を参照して本発明の一実
施例に係わるワイヤボンディング方法を説明する。ま
ず、図2に示すような、支持板(6)とインナーリード
(7)とを有し、支持板(6)の一方の主面にチップ
(8)が固着されたリードフレーム組立体(9)を用意
する。チップ(8)の上面には、第1の導体としてのA
u電極(10)が形成されている。また、インナーリー
ド(7)には、リード部(11)の端部側に相対的に幅
広の第2の導体としてのボンディングパッド(12)が
形成されている。Next, a wire bonding method according to an embodiment of the present invention will be described with reference to FIGS. First, as shown in FIG. 2, a lead frame assembly (9) having a support plate (6) and inner leads (7), and a chip (8) fixed to one main surface of the support plate (6). ) Is prepared. On the upper surface of the chip (8), A as a first conductor
A u electrode (10) is formed. Further, a bonding pad (12) as a relatively wide second conductor is formed on the inner lead (7) on the end side of the lead (11).
【0008】次に、このリードフレーム組立体(9)を
周知のワイヤボンダに配置し、Au電極(10)とボン
ディングパッド(12)との間に、図2に示すように、
Au細線から成る第1のリード細線(13)を接続す
る。第1のリード細線(13)の接続は、ワイヤボンダ
を使用することで、図3〜図9に示すような一連の工程
で行う。Next, this lead frame assembly (9) is arranged on a known wire bonder, and between the Au electrode (10) and the bonding pad (12), as shown in FIG.
A first lead wire (13) made of Au wire is connected. The connection of the first thin lead wires (13) is performed in a series of steps as shown in FIGS. 3 to 9 by using a wire bonder.
【0009】即ち、図3に示すように、ワイヤボンダの
キャピラリ(14)の先端からAu細線(15)を繰り
出し、その先端に水素トーチ等の燃焼によりボール(1
6)を形成する。次に、このAu細線(15)の先端を
Au電極(10)にボールボンディングする。即ち、図
4に示すように、ボール(16)をAu電極(10)の
上面に対してキャピラリ(14)によって押し付け、ボ
ール(16)を押し潰してAu電極(10)に接続す
る。このため、ボールボンディング部分(17)は、ボ
ール(16)がAu細線(15)の導出方向に対して偏
平化した形状となっている。なお、(18)は、チップ
(8)を支持板(6)に固着する半田である。That is, as shown in FIG. 3, an Au thin wire (15) is fed out from the tip of the capillary (14) of the wire bonder, and the ball (1) is burned to the tip by burning a hydrogen torch or the like.
6) is formed. Next, the tip of the Au thin wire (15) is ball-bonded to the Au electrode (10). That is, as shown in FIG. 4, the ball (16) is pressed against the upper surface of the Au electrode (10) by the capillary (14), and the ball (16) is crushed and connected to the Au electrode (10). For this reason, the ball bonding portion (17) has a shape in which the ball (16) is flattened in the direction in which the Au thin wire (15) is led out. Reference numeral (18) denotes solder for fixing the chip (8) to the support plate (6).
【0010】続いて、図5に示すように、Au細線(1
5)を繰り出しながら、キャピラリ(14)をボンディ
ングパッド(12)の上方に移動させ、Au細線(1
5)をボンディングパッド(12)にウェッジボンディ
ングする。即ち、図6に示すように、Au細線(15)
をボンディングパッド(12)の上面に対してキャピラ
リ(14)によって押し付け、Au細線(15)を押し
潰してボンディングパッド(12)に接続する。このた
め、ウェッジボンディング部分(19)は、Au細線
(15)が径方向に偏平化した形状となっている。[0010] Subsequently, as shown in FIG.
While feeding out 5), the capillary (14) is moved above the bonding pad (12), and the Au thin wire (1) is moved.
5) is wedge bonded to the bonding pad (12). That is, as shown in FIG.
Is pressed against the upper surface of the bonding pad (12) by the capillary (14), and the Au fine wire (15) is crushed and connected to the bonding pad (12). For this reason, the wedge bonding portion (19) has a shape in which the Au thin wire (15) is flattened in the radial direction.
【0011】ウェッジボンディングを終えたら、図7に
示すように、キャピラリ(14)をボンディングパッド
(12)から離間させてAu細線(15)を図8に示す
ように切断する。キャピラリ(14)の先端からはAu
細線(15)が導出されており、その先端には図9に示
すように次の第2のリード細線をボールボンディングす
るためのボール(16)が形成される。After completion of the wedge bonding, as shown in FIG. 7, the capillary (14) is separated from the bonding pad (12), and the Au fine wire (15) is cut as shown in FIG. Au from the tip of the capillary (14)
A thin wire (15) is led out, and a ball (16) for ball-bonding the next second lead fine wire is formed at the tip thereof as shown in FIG.
【0012】上記のようにして第1のリード細線(1
3)の接続を終了したら、これに連続してAu電極(1
0)とボンディングパッド(12)との間に、図10に
示すように第2のリード細線(20)を接続する。第2
のリード細線(20)のボンディングパッド(12)へ
のボールボンディングおよびAu電極(10)へのウェ
ッジボンディングは、第1のリード細線(13)のワイ
ヤボンディングと同様にワイヤボンダを使用した一連の
工程で行う。As described above, the first fine lead wire (1
After the connection of 3) is completed, the Au electrode (1
0) and a bonding pad (12), a second thin lead wire (20) is connected as shown in FIG. Second
The ball bonding of the lead fine wire (20) to the bonding pad (12) and the wedge bonding to the Au electrode (10) are performed in a series of steps using a wire bonder similarly to the wire bonding of the first lead fine wire (13). Do.
【0013】このとき、第2のリード細線(20)のボ
ンディングパッド(12)へのボールボンディングは、
図11に示すように本発明に基づいて、第1のリード細
線(13)のウェッジボンディング部分(19)の上面
に重ねて行う。従って、ボンディングパッド(12)の
上面には、第1のリード細線(13)のウェッジボンデ
ィング部分(19)と第2のリード細線(20)のボー
ルボンディング部分(21)が順次重なって形成され
る。第2のリード細線(20)のボールボンディング部
分(21)は、第1のリード細線(13)のボールボン
ディング部分(17)と同様に、ボールが第2のリード
細線(20)の導出方向に偏平化した形状となってい
る。At this time, ball bonding of the second fine lead wire (20) to the bonding pad (12) is performed as follows.
As shown in FIG. 11, according to the present invention, the first lead wire (13) is superposed on the upper surface of the wedge bonding portion (19). Therefore, the wedge bonding portion (19) of the first fine lead wire (13) and the ball bonding portion (21) of the second fine lead wire (20) are sequentially formed on the upper surface of the bonding pad (12). . The ball bonding portion (21) of the second fine lead wire (20) is, as in the case of the ball bonding portion (17) of the first fine lead wire (13), in the direction in which the ball is drawn out of the second fine lead wire (20). It has a flattened shape.
【0014】また、第2のリード細線(20)のAu電
極(10)へのウェッジボンディングは、図10に示す
ように、本発明に基づいて第1のリード細線のファース
トボンディング部分(17)から第1の方向(22)に
若干離れた位置に行われる。また、第2のリード細線
(20)のウェッジボンディング部分(23)は、第1
のリード細線(13)のウェッジボンディング部分(1
9)と同様に第2のリード細線(20)が径方向に偏平
化した形状となっている。また、第2のリード細線(2
0)の第1のリード細線(13)に対する角度θ1は約
15度となっている。Further, the wedge bonding of the second fine lead wire (20) to the Au electrode (10) is performed according to the present invention from the first bonding portion (17) of the first fine lead wire, as shown in FIG. This is performed at a position slightly apart in the first direction (22). The wedge bonding portion (23) of the second lead wire (20) is the first wedge bonding portion (23).
Wedge bonding part (1
Similarly to 9), the second fine lead wire (20) has a shape flattened in the radial direction. In addition, the second thin lead wire (2
0) with respect to the first thin lead wire (13) is about 15 degrees.
【0015】上記のように、第2のリード細線(20)
の接続を終了したら、これに連続してAu電極(10)
とボンディングパッド(12)との間に、図12に示す
ように、第3のリード細線(24)を接続する。第3の
リード細線(24)のAu電極(10)へのボールボン
ディングおよびボンディングパッド(12)へのウェッ
ジボンディングは、第1および第2のリード細線(1
3)(20)と同様にワイヤボンダを使用した一連の工
程で行う。As described above, the second lead wire (20)
After the connection is completed, the Au electrode (10)
As shown in FIG. 12, a third fine lead wire (24) is connected between the second lead wire and the bonding pad (12). Ball bonding of the third lead wire (24) to the Au electrode (10) and wedge bonding to the bonding pad (12) are performed by the first and second lead wires (1).
3) Performed in a series of steps using a wire bonder as in (20).
【0016】また、第3のリード細線(24)のAu電
極(10)へのボールボンディングは、本発明に基づい
て、第2のリード細線(20)のウェッジボンディング
部分(23)の上面に重ねて行う。従って、Au電極
(10)の上面には、第1のリード細線(13)のボー
ルボンディング部分(17)から第1の方向(22)に
若干離れた位置に、第2のリード細線(20)のウェッ
ジボンディング部分(23)と第3のリード細線(2
4)のボールボンディング部分(25)が順次重なって
形成される。第3のリード細線(24)のボールボンデ
ィング部分(25)は、第2のリード細線(20)のボ
ールボンディング部分(21)と同様にボール部が偏平
化した形状となっている。According to the present invention, the ball bonding of the third fine lead wire (24) to the Au electrode (10) is performed on the upper surface of the wedge bonding portion (23) of the second fine lead wire (20). Do it. Therefore, on the upper surface of the Au electrode (10), the second lead wire (20) is located slightly away from the ball bonding portion (17) of the first lead wire (13) in the first direction (22). Wedge bonding portion (23) and third lead wire (2)
The ball bonding portion (25) of 4) is sequentially formed to overlap. The ball bonding portion (25) of the third fine lead wire (24) has a flattened ball portion like the ball bonding portion (21) of the second fine lead wire (20).
【0017】また、第3のリード細線(24)のボンデ
ィングパッド(12)へのウェッジボンディングは、本
発明に基づいて第2のリード細線(20)のボールポン
ディング部分(21)即ち第1のリード細線(13)の
ウェッジボンディング部分(19)から第1の方向(2
2)に若干離れた位置に行われる。また、第3のリード
細線(24)のウェッジボンディング部分(26)は、
リード細線が径方向に偏平化した形状となっている。ま
た、第3のリード細線(24)の第2のリード細線(2
0)に対する角度θ2は、第2のリード細線(20)の
第1のリード細線(13)に対する角度θ1と同じ15
度となっている。また、第1のリード細線(13)のボ
ールボンディング部分(17)と第2のリード細線(2
0)のウェッジボンディング部分(23)との間隔L1
と、第2のリード細線(20)のボールボンディング部
分(19)と第3のリード細線(24)のウェッジボン
ディング部分(26)との間隔L2はほぼ等しくなって
いる。従って、第1のリード細線(13)と第3のリー
ド細線(24)は、平面的に見て図12に示すように平
行に接続されている。Further, the wedge bonding of the third fine lead wire (24) to the bonding pad (12) is performed according to the present invention by the ball bonding portion (21) of the second fine lead wire (20), that is, the first lead fine wire (20). From the wedge bonding portion (19) of the lead wire (13), the first direction (2)
The operation is performed at a position slightly away from 2). The wedge bonding portion (26) of the third lead wire (24) is
The lead wire has a shape flattened in the radial direction. Further, the second lead thin wire (2) of the third lead thin wire (24)
The angle θ 2 with respect to 0) is the same as the angle θ 1 of the second lead wire (20) with respect to the first lead wire (13).
Degree. Further, the ball bonding portion (17) of the first fine lead wire (13) and the second fine lead wire (2
Distance between wedge bonding portion 0) (23) L 1
When the interval L 2 between the wedge bonding portion (26) of the ball bonding portion of the second lead thin line (20) and (19) the third lead thin line (24) is substantially equal. Therefore, the first thin lead wires (13) and the third thin lead wires (24) are connected in parallel as shown in FIG.
【0018】[0018]
【変形例】本発明は、上述の実施例に限定されるもので
なく、変形が可能なものである。例えば、リード細線
(13)(20)(24)をCuワイヤにしてもよい。
また、第1の導体をインナーリードのボンディングパッ
ド等にしてもよい。また、リード細線(13)(20)
(24)のワイヤボンディングに続けて更に多くのリー
ド細線を連続的にワイヤボンディングしてもよい。ま
た、半導体素子をアルミナ、セラミック、ガラスエポキ
シ等の配線基板としてもよい。[Modifications] The present invention is not limited to the above-described embodiment, but can be modified. For example, the lead thin wires (13), (20), and (24) may be Cu wires.
Further, the first conductor may be an inner lead bonding pad or the like. In addition, fine lead wires (13) (20)
Following the wire bonding of (24), more lead thin wires may be continuously wire-bonded. Further, the semiconductor element may be a wiring board made of alumina, ceramic, glass epoxy, or the like.
【図1】従来のワイヤボンディングを示す平面図であ
る。FIG. 1 is a plan view showing conventional wire bonding.
【図2】本発明の実施例に係わる第1のリード細線のワ
イヤボンディングを示す平面図である。FIG. 2 is a plan view showing wire bonding of a first thin lead wire according to the embodiment of the present invention.
【図3】図2の第1のリード細線をキャピラリから繰り
出したところを示す断面図である。FIG. 3 is a cross-sectional view showing a state where a first thin lead wire of FIG. 2 is drawn out of a capillary.
【図4】図2の第1のリード細線の第1の導体へのボー
ルボンディングを示す断面図である。FIG. 4 is a cross-sectional view showing ball bonding of a first thin lead wire of FIG. 2 to a first conductor.
【図5】図2の第1のリード細線のボールボンディング
部を示す断面図である。FIG. 5 is a sectional view showing a ball bonding portion of the first thin lead wire of FIG. 2;
【図6】図2の第1のリード細線の第2の導体へのウェ
ッジボンディングを示す断面図である。FIG. 6 is a cross-sectional view showing wedge bonding of the first fine lead wire of FIG. 2 to a second conductor.
【図7】図2の第1のリード細線のウェッジボンディン
グ部を示す断面図である。FIG. 7 is a sectional view showing a wedge bonding portion of the first thin lead wire of FIG. 2;
【図8】図10の第2のリード細線をキャピラリから繰
り出したところを示す断面図である。FIG. 8 is a cross-sectional view showing a state where the second fine lead wire of FIG. 10 is drawn out of a capillary.
【図9】図8の第2のリード細線の先端にボール部を形
成したところを示す断面図である。FIG. 9 is a cross-sectional view showing a state where a ball portion is formed at the tip of the second fine lead wire of FIG. 8;
【図10】本発明の実施例に係わる第2のリード細線の
ワイヤボンディングを示す平面図である。FIG. 10 is a plan view showing wire bonding of a second thin lead wire according to the embodiment of the present invention.
【図11】図10の第2のリード細線の第2の導体への
ボールボンディングを示す断面図である。FIG. 11 is a cross-sectional view showing ball bonding of the second fine lead wire of FIG. 10 to a second conductor.
【図12】本発明の実施例に係わる第3のリード細線の
ワイヤボンディングを示す平面図である。FIG. 12 is a plan view showing wire bonding of a third thin lead wire according to the embodiment of the present invention.
10 第1の導体 12 第2の導体 13 第1のリード細線 20 第2のリード細線 24 第3のリード細線 DESCRIPTION OF SYMBOLS 10 1st conductor 12 2nd conductor 13 1st lead thin wire 20 2nd lead thin wire 24 3rd lead thin wire
Claims (2)
細線を接続するワイヤボンディング方法において、第1
の導体の一方の主面に第1のリード細線の一端をボール
ボンディングする第1の工程と、第2の導体の一方の主
面に前記第1のリード細線の他端をウェッジボンディン
グする第2の工程と、前記第2の導体の一方の主面に前
記第1のリード線のウェッジボンディング部分に重ねて
第2のリード細線の一端をボールボンディングする第3
の工程と、前記第1の導体の一方の主面に前記第1のリ
ード細線のボールボンディング部分から第1の方向に離
間した位置において前記第2のリード細線の他端をウェ
ッジボンディングする第4の工程と、前記第1の導体の
一方の主面に前記第2のリード細線のウェッジボンディ
ング部分に重ねて第3のリード細線の一端をボールボン
ディングする第5の工程と、前記第2の導体の主面に前
記第1のリード細線のウェッジボンディング部分から前
記第1の方向に離間した位置において前記第3のリード
細線の他端をウェッジボンディングすることで前記第3
のリード細線を前記第1のリード細線と平行にワイヤボ
ンディングする第6の工程と、を備えたことを特徴とす
るワイヤボンディング方法。1. A wire bonding method for connecting a thin lead wire between a first conductor and a second conductor, the method comprising:
A first step of ball-bonding one end of a first thin lead wire to one main surface of a second conductor, and a second step of wedge bonding the other end of the first thin lead wire to one main surface of a second conductor. And a third step in which one end of the second lead wire is ball-bonded on one main surface of the second conductor so as to overlap a wedge bonding portion of the first lead wire.
And wedge bonding the other end of the second lead wire to a first main surface of the first conductor at a position separated from the ball bonding portion of the first lead wire in a first direction. And a fifth step of ball-bonding one end of a third thin lead wire to one main surface of the first conductor so as to overlap a wedge bonding portion of the second thin lead wire, and the second conductor The other end of the third lead wire is wedge-bonded to the main surface of the third lead wire at a position separated from the wedge bonding portion of the first lead wire in the first direction.
And a sixth step of wire bonding the thin lead wire in parallel with the first thin lead wire.
ド細線に対する角度と、前記第3のリード細線の前記第
2のリード細線に対する角度とは等しく且つ10〜30
度になっていることを特徴とする請求項1に記載のワイ
ヤボンディング方法。2. An angle of the first lead wire with respect to the second lead wire is equal to an angle of the third lead wire with respect to the second lead wire, and is 10 to 30.
The wire bonding method according to claim 1, wherein the wire bonding method is performed at a predetermined temperature.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8312519A JP2823000B2 (en) | 1996-10-18 | 1996-10-18 | Wire bonding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8312519A JP2823000B2 (en) | 1996-10-18 | 1996-10-18 | Wire bonding method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH10125710A true JPH10125710A (en) | 1998-05-15 |
JP2823000B2 JP2823000B2 (en) | 1998-11-11 |
Family
ID=18030208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8312519A Expired - Fee Related JP2823000B2 (en) | 1996-10-18 | 1996-10-18 | Wire bonding method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2823000B2 (en) |
Cited By (4)
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DE10324069A1 (en) * | 2003-05-27 | 2004-12-23 | Infineon Technologies Ag | Circuit to conductively bond contact spots on a semiconductor chip to mounting connections has a straight and a bent bond wire connection |
DE102004047306A1 (en) * | 2004-09-29 | 2006-04-06 | Infineon Technologies Ag | Power semiconductor component, has power and control assemblies, which are contacted by bonding wires of different thickness, where bonding wires serving as contact surface are thicker than contacted bonding wires |
US7391121B2 (en) | 2005-02-10 | 2008-06-24 | Infineon Technologies Ag | Semiconductor device with a number of bonding leads and method for producing the same |
JP2017102251A (en) * | 2015-12-01 | 2017-06-08 | 三菱電機株式会社 | Optical Modulator Module |
-
1996
- 1996-10-18 JP JP8312519A patent/JP2823000B2/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10324069A1 (en) * | 2003-05-27 | 2004-12-23 | Infineon Technologies Ag | Circuit to conductively bond contact spots on a semiconductor chip to mounting connections has a straight and a bent bond wire connection |
DE10324069B4 (en) * | 2003-05-27 | 2005-06-23 | Infineon Technologies Ag | Circuit arrangement and method for the conductive connection of contact pads in semiconductor chips |
DE102004047306A1 (en) * | 2004-09-29 | 2006-04-06 | Infineon Technologies Ag | Power semiconductor component, has power and control assemblies, which are contacted by bonding wires of different thickness, where bonding wires serving as contact surface are thicker than contacted bonding wires |
DE102004047306B4 (en) * | 2004-09-29 | 2008-02-07 | Infineon Technologies Ag | Power semiconductor device with several component components |
US7514778B2 (en) | 2004-09-29 | 2009-04-07 | Infineon Technologies Ag | Power semiconductor device |
US7391121B2 (en) | 2005-02-10 | 2008-06-24 | Infineon Technologies Ag | Semiconductor device with a number of bonding leads and method for producing the same |
JP2017102251A (en) * | 2015-12-01 | 2017-06-08 | 三菱電機株式会社 | Optical Modulator Module |
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