JPS62256447A - Capillary chip for wire bonding - Google Patents

Capillary chip for wire bonding

Info

Publication number
JPS62256447A
JPS62256447A JP61100606A JP10060686A JPS62256447A JP S62256447 A JPS62256447 A JP S62256447A JP 61100606 A JP61100606 A JP 61100606A JP 10060686 A JP10060686 A JP 10060686A JP S62256447 A JPS62256447 A JP S62256447A
Authority
JP
Japan
Prior art keywords
bonding
ball
chip
wire
capillary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61100606A
Other languages
Japanese (ja)
Inventor
Toshiharu Sugimura
杉村　敏治
Saneyasu Hirota
弘田　実保
Kazumichi Machida
一道 町田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61100606A priority Critical patent/JPS62256447A/en
Publication of JPS62256447A publication Critical patent/JPS62256447A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10162—Shape being a cuboid with a square active surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To provide wire bonding in a good junction state even if the distance between adjacent electrodes is small by a method wherein the title chip is provided with a ball bonding part and a stitch bonding part with the stitch bonding surface thereof partly notched. CONSTITUTION:When an electrode 3 of a miniaturized semiconductor chip 2 and a bonding area of copper alloy lead 4 are connected by a copper wire 1 with thermal pressure fixing process jointly using ultrasonic, the direction of copper wire 1 interconnecting the electrode 3 on semiconductor chip to the lead 4 is limited to the ranged of A to A and B to B. Therefore, the title chip can be contracted into the shape comprising a ball bonding part ball bonding one end of copper wire 1 onto the electrode 3 and stitch bonding part encircling the ball bonding part and stitch bonding the copper wire 1 only in the interconnecting direction within the specified ranges on the lead 4. Through these procedures, the distance between adjacent electrodes ball-bonded in conformity to the shape of end pressurized part of contracted capillary chip 5 can be shortened.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、工Ｃやトランジスタなどの製造工程におい
て、半導体チップの電極とリードとを金属ワイヤにより
接続するワイヤボンディングに用いられるキャピラリチ
ップＶＣ関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a capillary chip VC used for wire bonding, which connects electrodes and leads of a semiconductor chip with metal wires in the manufacturing process of semiconductors, transistors, etc. It is something.

〔従来の技術〕[Conventional technology]

第４図は、例えば特項昭６０−４０６２４号明細書に示
され九一般のワイヤボンディング方法を示す工程図であ
る。図において、（１）は金ワイヤ、（２）は半導体チ
ップ、（３１は半導体チップ（２）上に形成されたアル
ミニウム電極、（４）は銀めっき等の表面処理が施され
た銅合金リード、（５）はボンディングツールであるキ
ャピラリチップであり、キャピラリチップ（５）は超音
波ホーン（図示せず）ＶＣ取り付けられ、またキャピラ
リチップ（５）内の貫通孔を金ワイヤ（１）が通ってめ
る。FIG. 4 is a process diagram showing nine general wire bonding methods disclosed in, for example, the specification of Special Patent Application No. 1988-40624. In the figure, (1) is a gold wire, (2) is a semiconductor chip, (31 is an aluminum electrode formed on the semiconductor chip (2), and (4) is a copper alloy lead with surface treatment such as silver plating. , (5) is a capillary tip which is a bonding tool, and the capillary tip (5) is attached with an ultrasonic horn (not shown) and a VC, and a gold wire (1) is passed through a through hole in the capillary tip (5). Temeru.

次に工程について説明するＯｌず、金ワイヤ（１）の先
端部と放電電極（図示せず）との間に高醒圧を印加して
アークを発生させ、アーク入熱により金ワイヤ（１）の
先端部を溶融凝固させてボール状に形成する。このボー
ル部を、超音波ホーンにより超音波振動するキャピラリ
チップ（５）　ＶＣよって、加熱された半導体チップ（
２）上のアルミニウム￥［＋Ｍｆ３１に圧着させる（第
４図（ａ）参照）。いわゆる超音波併用熱圧着方式のボ
ールボンディングを行う。次に、キャピラリチップ（５
）をリード（４）上へ移動させ（第４図（ｂ）参照）、
リード（４）上に金ワイヤ（１）を超音波併用熱圧着方
式でステッチボンディングし、金ワイヤ（１）を切断す
る（第４図（ｃ）（ｄ）参照）。これらの工程を繰り返
すことにより、半導体チップの複数の電極とリードとが
それぞれ電気的に接続される。Next, the process will be explained. First, a high discharge pressure is applied between the tip of the gold wire (1) and a discharge electrode (not shown) to generate an arc, and the gold wire (1) is heated by the arc heat. The tip is melted and solidified to form a ball shape. The capillary chip (5) is ultrasonically vibrated by an ultrasonic horn, and the semiconductor chip (5) is heated by VC.
2) Press the upper aluminum \[+Mf31] (see Fig. 4(a)). Ball bonding is performed using the so-called ultrasonic thermocompression method. Next, capillary tip (5
) onto the lead (4) (see Figure 4(b)),
The gold wire (1) is stitch-bonded onto the lead (4) using a thermocompression bonding method combined with ultrasonic waves, and the gold wire (1) is cut (see FIGS. 4(c) and 4(d)). By repeating these steps, the plurality of electrodes and leads of the semiconductor chip are electrically connected to each other.

第５図は従来のキャピラリチップを用いてボールボンデ
ィングを行った時の隣接する電極上に形成されたボール
とキャピラリチップとの位置関係を示す説明図であり、
第５図（、りはｔ　他＋３１上のボール（６）とキャピ
ラリチップ（５）の先端加圧部との位置関係を示し、第
５図（ｂ）は縦断面を示す。図において、（６）は金ワ
イヤ（１）の一端部に形成され、半導体チップ（２）の
電極＋３１　Ｋ接続するボールである。（１）〜（３）
および（５）は第４図と同様のものである。FIG. 5 is an explanatory diagram showing the positional relationship between balls formed on adjacent electrodes and a capillary chip when ball bonding is performed using a conventional capillary chip.
FIG. 5(b) shows the positional relationship between the ball (6) on the other +31 and the tip pressurizing part of the capillary tip (5), and FIG. 5(b) shows a longitudinal section. 6) is a ball formed at one end of the gold wire (1) and connected to the electrode +31K of the semiconductor chip (2). (1) to (3)
and (5) are similar to those in FIG.

従来のワイヤボンディング用キャピラリチップ（５）　
ハポールボンデイングとステッチボンディングの接合性
を良好に保つなめに平坦な先端加圧部を有してい念。こ
の平坦な先端加圧部は、ポールポンディングする時に最
低限度必要なボールボンディング部と、このポールボン
ディング部を囲繞し半導体チップ（２）の電極（３）と
離れた位置のリード（４）上に金ワイヤ（１］をステッ
チボンディングするためのステッチボンディング面とか
らなり、＄５図（ａ）に示されるとおり円形をなしてい
友。Conventional capillary tip for wire bonding (5)
It has a flat tip pressurizing part to maintain good bonding between Hapol bonding and stitch bonding. This flat tip pressurizing part covers the minimum required ball bonding part for pole bonding and the lead (4) that surrounds this pole bonding part and is located away from the electrode (3) of the semiconductor chip (2). and a stitch-bonding surface for stitch-bonding the gold wire (1) to the surface, forming a circular shape as shown in Figure (a).

ここで、材料原価低減、半導体チップの高集積化の観点
から半導体チップ（２）の小製化が進められ、これに伴
り半導体チップ（２）上の隣接する電極（３）間の距離
を短縮することが望まれている。Here, from the viewpoint of reducing material costs and increasing the integration of semiconductor chips, the semiconductor chip (2) has been made smaller, and the distance between adjacent electrodes (3) on the semiconductor chip (2) has been reduced accordingly. It is hoped that it will be shortened.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来のキャピラリチップ（５）は半導体チップ（２）の
隣接する電極（３）間の距離が短くなると、第５図（ａ
）および（ｂ）　ＶＣ示されるとおり、隣接するボール
（６）や金属ワイヤ（１）にキャピラリチップ（６）が
接触する。In the conventional capillary chip (5), when the distance between adjacent electrodes (3) of the semiconductor chip (2) becomes short,
) and (b) VC As shown, the capillary tip (6) contacts the adjacent ball (6) or metal wire (1).

このことによって、接合不良、すなわち接合強度の不足
、ボンディング時の接合部のはがれ、ループ不良などが
発生した。したがって、従来のキャピラリチップは、接
合状態の良好なワイヤボンディングを行うことができな
ｈという問題点かあつ九〇 この発明は上記のような問題点を解決するためになされ
たもので、隣接する電極間の距離が短い半導体チップで
も、良好な接合状態でワイヤボンディングできるキャピ
ラリチップを得ることを目的とする。This resulted in poor bonding, ie, insufficient bonding strength, peeling of the bonded portion during bonding, loop defects, and the like. Therefore, the conventional capillary chip has the problem of not being able to perform wire bonding with a good bonding state.90 This invention was made to solve the above problems. The purpose of the present invention is to obtain a capillary chip that can be wire-bonded in a good bonding state even in a semiconductor chip with a short distance between electrodes.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係るキャピラリチップは、金属ワイヤの一端
部に形成されたボール部を半導体チップの電極上にポー
ルポンディングするポールボンディング部と−このポー
ルボンディング部を囲繞し上記電極と離れ九位置のリー
ド上に金属ワイヤの他端部をステッチボンディングする
ためのステッチボンディング間の一部を切欠いて形成さ
れたステッチボンディング部とを備えたものである。The capillary chip according to the present invention includes a pole bonding part for pole-bonding a ball part formed at one end of a metal wire onto an electrode of a semiconductor chip, and a lead that surrounds this pole bonding part and is located nine positions apart from the electrode. It is provided with a stitch bonding part formed by cutting out a part between the stitch bondings for stitch-bonding the other end of the metal wire on the top.

〔作　用〕[For production]

仁の発明におけるキャピラリチップは、ステッチボンデ
ィング部が径の短い部分を有している。In the capillary chip according to Jin's invention, the stitch bonding portion has a short diameter portion.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。第１
図は、この発明の実施例のキャピラリチップを示す構造
図である。第１図において、（ｂ）はキャピラリチップ
の底面図、（ａ）は（ｂ）のＩａ−ＩＣ線断面図、（Ｃ
）は伽）のＩｃ−ＩＣ線断面図である。第２図はこの発
明の実施例のキャピラリチップを用いてポールポンディ
ングを行つ九時の半導体チップ、リードおよび金ワイヤ
の位置関係を示す説明図、第３図は同様にポールポンデ
ィングを行った時の隣接する電極上に形成されたボール
とキャピラリチップの位置関係を示す説明図である。な
お、第３図（−）は電極（３）上のボール（６）とキャ
ビラリチップ（５）の先端加圧部との位置関係を示し、
第３図（ｂ）は縦断面図を示す。図において、（１）は
銅ワイヤ、（２）は半導体チップ、（３）は半導体チッ
プ上の電極、（４）は銅合金リード、（５）はキャピラ
リチップ、（６）は銅ワイヤ（１）の一端部に形成され
、半導体チップ（２）の電極（３）に接続するボールで
ある。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a structural diagram showing a capillary chip according to an embodiment of the present invention. In FIG. 1, (b) is a bottom view of the capillary chip, (a) is a sectional view taken along the Ia-IC line in (b), and (C
) is a cross-sectional view taken along the Ic-IC line of 佽). FIG. 2 is an explanatory diagram showing the positional relationship of the semiconductor chip, leads, and gold wire at 9 o'clock when pole bonding is performed using a capillary chip according to an embodiment of the present invention, and FIG. FIG. 3 is an explanatory diagram showing the positional relationship between balls formed on adjacent electrodes and capillary chips when In addition, FIG. 3 (-) shows the positional relationship between the ball (6) on the electrode (3) and the tip pressurizing part of the capillary tip (5),
FIG. 3(b) shows a longitudinal cross-sectional view. In the figure, (1) is a copper wire, (2) is a semiconductor chip, (3) is an electrode on the semiconductor chip, (4) is a copper alloy lead, (5) is a capillary chip, and (6) is a copper wire (1). ) is a ball formed at one end of the semiconductor chip (2) and connected to the electrode (3) of the semiconductor chip (2).

この実施例では、従来のワイヤボンディングと同様に、
小形化された半導体チップ（２）の電極（３）と銅合金
リード（４）のボンディングエリアとを、例えば超音波
併用熱圧着方式で、銅ワイヤ（１）により結線する。こ
の際に、第２図に示されるように、半導体チップ（２）
上の電極（３１とリード（４）とを結ぶ銅ワイヤ（１）
の配線方向をＡ−Ａ範囲およびＢ−Ｂ範囲内に制限する
。このことにより、リード（４）上にステッチボンディ
ングされる銅ワイヤ（１）の配線方向が所定の範囲内Ｖ
Ｃ足まり、これに応じてキャピラリチップ（５）の先端
加圧部の形状を、次の形状に縮小することができる。つ
まり、電極（３１上に銅ワイヤ（１）　ノー　４部をボ
ールボンディングするボールボンディング部と、このボ
ールポンディング部ヲ囲繞し、リード上に上記所定の範
囲内の配線方向の銅ワイヤ（１）のみをステッチボンデ
ィングするためのステッチボンディング部とからなる形
状である。In this example, similar to conventional wire bonding,
The electrode (3) of the miniaturized semiconductor chip (2) and the bonding area of the copper alloy lead (4) are connected by a copper wire (1), for example, by a thermocompression bonding method combined with ultrasonic waves. At this time, as shown in FIG.
Copper wire (1) connecting the upper electrode (31) and lead (4)
The wiring direction is limited to within the A-A range and the B-B range. This allows the wiring direction of the copper wire (1) to be stitch-bonded onto the lead (4) to be within the predetermined range V.
Accordingly, the shape of the tip pressurizing part of the capillary tip (5) can be reduced to the following shape. In other words, there is a ball bonding part for ball bonding the copper wire (1) on the electrode (31), and a copper wire (1) surrounding this ball bonding part and extending in the wiring direction within the above-mentioned predetermined range on the lead. It has a shape that consists of a stitch bonding part for stitch bonding only.

したがって、縮小されたキャピラリチップ（５）の先端
加圧部の形状にあわせてボールボンディングされる隣接
する電極間の距離を短縮できる。なお、第３図（、）中
（７）は従来のキャピラリチップを用いたワイヤボンデ
ィング時の隣接ボールの位置である。Therefore, the distance between adjacent electrodes that are ball-bonded can be shortened in accordance with the shape of the tip pressurizing part of the reduced capillary chip (5). Note that (7) in FIG. 3(,) is the position of adjacent balls during wire bonding using a conventional capillary chip.

こうして、隣接する電極間の距離の短い半導体チップを
ワイヤボンディングできるキャピラリチップを得ること
ができる。In this way, it is possible to obtain a capillary chip that allows wire bonding of semiconductor chips with short distances between adjacent electrodes.

ここで、例えば線径が２５）ｔｍの銅ワイヤ（１）を用
いた場合について考えると、ボールボンディングされた
ボール（６）の大きさは、径が約９０〜１００，４ｍと
なる。このとき、キャピラリチップ（５）を第１図に示
す形状、すなわち、第５図に示され念従来のキャビ２リ
チツプの円形の先端加圧部を対向する両側面から平坦部
を１部声ｍのみ残して、第１図中α＝６９°の角度で除
去加工（研摩）する。そして、第２図に示されるように
、キャピラリチップ（５）を銅ワイヤ（１）の配線方向
に対して、第３図に示すように、隣接するボール（６）
ｔたは銅ワイヤ（１）との接触を避けることができる角
度で装着する０このことにより、ステッチボンディング
はキャピラリチップ（５）の先端加圧部で十分に加圧さ
れるため接合性が損われることがない。Here, for example, if we consider the case where a copper wire (1) with a wire diameter of 25) tm is used, the size of the ball-bonded ball (6) will be about 90 to 100.4 m in diameter. At this time, the capillary tip (5) is shaped as shown in FIG. 1, that is, as shown in FIG. It is removed (polished) at an angle of α=69° in FIG. 1, leaving only the remaining parts. Then, as shown in FIG. 2, the capillary chip (5) is connected to the adjacent ball (6) with respect to the wiring direction of the copper wire (1), as shown in FIG.
Attach the stitch bond at an angle that avoids contact with the capillary tip (5) or the copper wire (1). This will ensure that the stitch bonding is sufficiently pressurized by the pressurized tip of the capillary tip (5), resulting in loss of bonding properties. Never get caught.

なお、上記実施例では銅ワイヤ（１）の径をｆ３５ｐｍ
とすると隣接するボール間の距離（ピッチ）を最小１２
０声ｍ程度まで短縮することができる。In addition, in the above example, the diameter of the copper wire (1) is f35pm.
Then, the distance (pitch) between adjacent balls is at least 12
It can be shortened to about 0 m.

上記実施例では、金属ワイヤとして銅ワイヤについて述
べ念が、従来の金ワイヤやアルミニウムワイヤにつｈて
も同様の効果が得られる。金属ワイヤとして銅ワイヤを
用いると、材料原価の低減および素子の長期信頼性向上
という観点から有効である。In the above embodiments, copper wire is used as the metal wire, but similar effects can be obtained using conventional gold wire or aluminum wire. Using a copper wire as the metal wire is effective from the viewpoint of reducing material costs and improving long-term reliability of the device.

マ念、サーマルヘッドのドライバエＣチップのような相
対する２辺に平行にボールボンディングされるような工
Ｃチップ等においても同等の効果が期待できる。Note that the same effect can be expected with a dry-air C chip of a thermal head that is ball-bonded parallel to two opposing sides.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明に係るワイヤボンディング用キ
ャピラリチップは、金属ワイヤの一端部に形成されたボ
ール部を半導体チップの電極上にボールボンディングす
るポールボンディング部と、このポールボンディング部
を囲繞し上記電極と離れた位置のリード上に金属ワイヤ
の他端部をステッチボンディングするためのステッチボ
ンディング面の一部を切欠いて形成され九ステッチボン
ディング部とを備えたので、隣接する電極間の距離が短
い半導体チップでも良好な接合状態でワイヤボンディン
グできる。As described above, the capillary chip for wire bonding according to the present invention includes a pole bonding part for ball-bonding a ball part formed at one end of a metal wire onto an electrode of a semiconductor chip, and a capillary chip that surrounds this pole bonding part and has the above-mentioned structure. It has a nine-stitch bonding section formed by cutting out a part of the stitch bonding surface for stitch-bonding the other end of the metal wire onto the lead located away from the electrode, so the distance between adjacent electrodes is short. Even semiconductor chips can be wire bonded with good bonding conditions.

【図面の簡単な説明】[Brief explanation of drawings]

第１図はこの発明の実施例のキャビ２リチツプを示す構
造図、第２図はこのキャピラリチップを用いてボールボ
ンディングを行つ九時の半導体チップ、リードおよび金
ワイヤの位置関係を示す説明図、第３図は同様にボール
ボンディングを行った時の隣接する電極上の形成された
ボールとキャピラリチップとの位置関係を示す説明図、
第４図は従来のワイヤボンディング方式を示す工程図、
第５図は従来のキャピラリチップを用いてポールボンデ
ィングを行った蒔の隣接する電極上に形成されたボール
とキャピラリチップとの位置関係を示す説明図である。 図において、（１）は金属ワイヤ、（２）は半導体チッ
プ、　＋３１は電極、（４）はリード、（５）はキャピ
ラリチップである。 なお、各図中同一符号は同−又は相当部分を示す０Fig. 1 is a structural diagram showing a cavity 2 re-chip according to an embodiment of the present invention, and Fig. 2 is an explanatory diagram showing the positional relationship of the semiconductor chip, leads, and gold wire at the 9 o'clock position when ball bonding is performed using this capillary chip. , FIG. 3 is an explanatory diagram showing the positional relationship between the balls formed on adjacent electrodes and the capillary chip when ball bonding is similarly performed,
Figure 4 is a process diagram showing the conventional wire bonding method.
FIG. 5 is an explanatory diagram showing the positional relationship between a capillary chip and balls formed on adjacent electrodes of a sow in which pole bonding is performed using a conventional capillary chip. In the figure, (1) is a metal wire, (2) is a semiconductor chip, +31 is an electrode, (4) is a lead, and (5) is a capillary chip. In addition, the same symbols in each figure indicate the same or corresponding parts.

Claims (4)

【特許請求の範囲】[Claims] （１）金属ワイヤが通る貫通孔、この貫通孔の開口部を
囲繞して設けられ、上記金属ワイヤの一端部に形成され
たボール部を半導体チップの電極上にボールボンディン
グするボールボンディング部、このボールボンディング
部を囲繞し上記電極と離れた位置のリード上に上記金属
ワイヤの他端部をステッチボンディングするためのステ
ッチボンディング面の一部を切欠いて形成されたステッ
チボンディング部を備えたワイヤボンディング用キャピ
ラリチップ。(1) A through hole through which a metal wire passes; a ball bonding portion provided surrounding the opening of the through hole for ball bonding a ball portion formed at one end of the metal wire onto an electrode of a semiconductor chip; For wire bonding, the device includes a stitch bonding portion formed by cutting out a part of the stitch bonding surface for stitch bonding the other end of the metal wire onto a lead that surrounds the ball bonding portion and is located away from the electrode. capillary tip. （２）金属ワイヤは金よりなることを特徴とする特許請
求の範囲第１項記載のワイヤボンディング用キャピラリ
チップ。(2) The capillary chip for wire bonding according to claim 1, wherein the metal wire is made of gold. （３）金属ワイヤは銅よりなることを特徴とする特許請
求の範囲第１項記載のワイヤボンディング用キャピラリ
チップ。(3) The capillary chip for wire bonding according to claim 1, wherein the metal wire is made of copper. （４）金属ワイヤはアルミニウムよりなることを特徴と
する特許請求の範囲第１項記載のワイヤボンディング用
キャピラリチップ。(4) The capillary chip for wire bonding according to claim 1, wherein the metal wire is made of aluminum.
JP61100606A 1986-04-28 1986-04-28 Capillary chip for wire bonding Pending JPS62256447A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61100606A JPS62256447A (en) 1986-04-28 1986-04-28 Capillary chip for wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61100606A JPS62256447A (en) 1986-04-28 1986-04-28 Capillary chip for wire bonding

Publications (1)

Publication Number Publication Date
JPS62256447A true JPS62256447A (en) 1987-11-09

Family

ID=14278519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61100606A Pending JPS62256447A (en) 1986-04-28 1986-04-28 Capillary chip for wire bonding

Country Status (1)

Country Link
JP (1) JPS62256447A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0252441U (en) * 1988-10-06 1990-04-16

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0252441U (en) * 1988-10-06 1990-04-16

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