JPH095691A - Wafer treating device - Google Patents
Wafer treating deviceInfo
- Publication number
- JPH095691A JPH095691A JP7159242A JP15924295A JPH095691A JP H095691 A JPH095691 A JP H095691A JP 7159242 A JP7159242 A JP 7159242A JP 15924295 A JP15924295 A JP 15924295A JP H095691 A JPH095691 A JP H095691A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chemical
- treatment
- tank
- chemical liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体基板や液晶ガ
ラス基板などの薄板状基板（以下、単に基板と称する）
を処理液に浸漬してこの表面に洗浄等の諸処理を施す基
板処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin substrate such as a semiconductor substrate or a liquid crystal glass substrate (hereinafter simply referred to as a substrate).
The present invention relates to a substrate processing apparatus for immersing a substrate in a processing liquid and performing various processing such as cleaning on the surface.
【０００２】[0002]
【従来の技術】従来、上記のような基板処理装置とし
て、単一機能の複数の処理槽に基板を順次浸漬してこれ
に一連の処理を行う多槽式処理装置と、多機能の単一処
理槽に薬液や純水等の処理液を順次投入して槽内の基板
に一連の処理を行う単槽式処理装置とが存在する。2. Description of the Related Art Conventionally, as a substrate processing apparatus as described above, a multi-tank type processing apparatus for sequentially immersing a substrate in a plurality of processing tanks having a single function and performing a series of processing on the substrate is provided. There is a single-tank type processing apparatus in which a processing solution such as a chemical solution or pure water is sequentially charged into a processing tank to perform a series of processing on a substrate in the tank.
【０００３】より具体的に説明すると、前者の多槽式処
理装置は、一種類の薬液を用いて基板に処理を行なう薬
液処理槽と水洗槽とをそれぞれ１つ以上備える。そし
て、これらの槽に予め定められた手順で基板を順次浸漬
する複数工程により、基板表面の汚染物質を除去した
り、基板表面の酸化膜をエッチングしたり、レジスト膜
を剥離したりする。More specifically, the former multi-tank processing apparatus is provided with one or more chemical solution processing tanks and one or more washing tanks for processing substrates using one kind of chemical solution. Then, the contaminants on the surface of the substrate are removed, the oxide film on the surface of the substrate is etched, and the resist film is peeled off by a plurality of steps of sequentially immersing the substrate in these baths in a predetermined procedure.
【０００４】一方、後者の単槽式処理装置は、薬液処理
及び水洗処理が可能な単一処理槽を備える。そして、こ
の単一処理槽中に基板を支持したままで薬液と純水とを
予め定められた手順で交互に供給して置換することによ
り、基板表面の汚染物質を除去したり、基板表面の酸化
膜をエッチングしたり、レジスト膜を剥離したりする。On the other hand, the latter single tank type processing apparatus is provided with a single processing tank capable of chemical treatment and water washing treatment. Then, while the substrate is supported in this single processing tank, the chemical liquid and the pure water are alternately supplied and replaced by a predetermined procedure to remove the contaminants on the substrate surface or to remove the substrate surface. The oxide film is etched and the resist film is peeled off.
【０００５】[0005]
【発明が解決しようとする課題】しかし、前者の装置で
は、基板を槽から槽に移し換える操作が不可欠であるた
め、かかる移し換え工程の際に基板表面における汚染物
質や、パーティクルの付着、不要膜の形成等の洗浄不良
の問題が生じ易い。また、多数の処理槽を設けなければ
ならなくなることから、基板処理装置全体の寸法が必然
的に増大せざるを得ない。However, in the former device, since the operation of transferring the substrate from one tank to another tank is indispensable, contaminants and particles on the surface of the substrate are not required to be attached or removed during the transfer step. Problems of poor cleaning such as film formation are likely to occur. Moreover, since a large number of processing baths must be provided, the size of the entire substrate processing apparatus is inevitably increased.
【０００６】一方、後者の装置では、前者のような問題
は生じないものの、槽内の薬液を一旦純水に置換し、そ
の後、他の薬液に置換する工程が不可欠であるため、高
温の薬液を使用しなければならない処理や、精密な温度
調節が必要な薬液を用いる処理を行うためには温度調節
に時間が掛かりスループットが極めて低下する。また、
高濃度の薬液を使用せねばならない処理を行うためには
槽内の薬液を所定の濃度にするまでに時間が掛かりスル
ープットが極めて低下する。On the other hand, in the latter device, although the problem as in the former does not occur, it is indispensable to replace the chemical liquid in the tank with pure water once and then with another chemical liquid, so that the high temperature chemical liquid is required. In order to carry out a treatment which requires the use of a chemical solution or a treatment which uses a chemical solution which requires precise temperature control, it takes a long time to control the temperature, resulting in extremely low throughput. Also,
In order to perform a process that requires the use of a high-concentration chemical solution, it takes time to bring the chemical solution in the tank to a predetermined concentration, and the throughput is extremely reduced.
【０００７】そこで、この発明は高温の薬液や精密な温
度調節が必要な薬液、また、高濃度の薬液を用いる処理
を行ってもスループットの低下を防止できるとともに、
省スペースで良好な洗浄を達成できる基板処理装置を提
供することを目的とする。Therefore, according to the present invention, it is possible to prevent a decrease in throughput even when performing a treatment using a high temperature chemical solution, a chemical solution requiring precise temperature control, or a high concentration chemical solution.
It is an object of the present invention to provide a substrate processing apparatus that can achieve good cleaning in a small space.
【０００８】[0008]
【課題を解決するための手段】上記課題を解決するた
め、請求項１の基板処理装置は、基板に所定の薬液処理
を施す少なくとも１つの薬液専用処理槽と、薬液専用処
理槽にて薬液処理を施された基板に薬液処理、水洗処理
及び乾燥処理のうちの少なくとも２つを施す多機能処理
槽とを備えることを特徴とする。In order to solve the above-mentioned problems, a substrate processing apparatus according to a first aspect of the present invention is a substrate processing apparatus, wherein at least one chemical-solution-dedicated processing bath for subjecting a substrate to a predetermined chemical-solution treatment and a chemical-solution-dedicated treatment tank. It is characterized in that it is provided with a multi-functional processing tank for performing at least two of a chemical solution treatment, a water washing treatment and a drying treatment on the substrate subjected to the treatment.
【０００９】また、請求項２の基板処理装置は、薬液専
用処理槽から薬液を導き出し、導き出された薬液を再び
薬液専用処理槽に導入する薬液の循環機構と、循環機構
または、薬液専用処理槽に設けられ、薬液の温度調節を
行う温度調節手段とを備えることを特徴とする。According to a second aspect of the present invention, in the substrate processing apparatus, a chemical solution circulating mechanism for introducing the chemical solution from the chemical solution dedicated processing tank and introducing the derived chemical solution into the chemical solution dedicated processing tank again, or a circulation mechanism or a chemical solution dedicated processing tank. And a temperature adjusting means for adjusting the temperature of the chemical liquid.
【００１０】また、請求項３の基板処理装置は、薬液専
用処理槽が、高温酸液による薬液処理を行うことを特徴
とする。Further, in the substrate processing apparatus according to the third aspect of the present invention, the processing bath for exclusive use of the chemical liquid performs the chemical liquid treatment with the high temperature acid liquid.
【００１１】また、請求項４の基板処理装置は、薬液専
用処理槽が、硫酸と過酸化水素水との混合溶液、または
燐酸または硫酸または硝酸のうちいずれかの薬液による
薬液処理を行うことを特徴とする。Further, in the substrate processing apparatus according to the fourth aspect of the present invention, the processing bath for exclusive use of the chemical solution performs the chemical solution processing with the mixed solution of sulfuric acid and hydrogen peroxide solution or the chemical solution of phosphoric acid, sulfuric acid or nitric acid. Characterize.
【００１２】また、請求項５の基板処理装置は、薬液専
用処理槽が、バッファードフッ酸による薬液処理を行う
ことを特徴とする。Further, the substrate processing apparatus according to the fifth aspect is characterized in that the processing bath dedicated to the chemical liquid performs the chemical liquid treatment with buffered hydrofluoric acid.
【００１３】また、請求項６の基板処理装置は、多機能
処理槽が、基板に乾燥処理を施すことを特徴とする。Further, the substrate processing apparatus according to the sixth aspect is characterized in that the multifunctional processing tank performs the drying process on the substrate.
【００１４】[0014]
【作用】請求項１の基板処理装置では、基板に所定の薬
液処理を施す少なくとも１つの薬液専用処理槽と、基板
に薬液処理、水洗処理及び乾燥処理のうちの少なくとも
２つを施す多機能処理槽とを備えるので、高温状態で使
用する薬液や精密な温度調節が必要な薬液、また、高濃
度の状態で使用する薬液を用いる処理では薬液専用処理
槽を用い、高温状態で使用する必要がなく、精密な温度
調節が必要ではなく、かつ、高濃度の状態で使用する必
要のない薬液を用いる処理では多機能処理槽を用いるこ
とができる。According to the substrate processing apparatus of the present invention, at least one chemical treatment tank for subjecting the substrate to a predetermined chemical treatment, and a multi-functional treatment for subjecting the substrate to at least two of the chemical treatment, the washing treatment and the drying treatment. Since it is equipped with a bath, it is necessary to use a chemical bath dedicated for chemicals and to use it at high temperature for the treatment using chemicals used at high temperature or those requiring precise temperature control. In addition, a multifunctional treatment tank can be used in a treatment using a chemical solution that does not require precise temperature control and does not need to be used in a high concentration state.
【００１５】また、請求項２の基板処理装置では薬液専
用処理槽から薬液を導き出し、導き出された薬液を再び
薬液専用処理槽に導入する薬液の循環機構と薬液の温度
調節を行う温度調節手段とを備えているので、循環機構
が薬液を循環させて薬液専用処理槽内の薬液を対流さ
せ、また、温度調節手段が薬液の温度を調節することに
よって薬液専用処理槽内の薬液の温度を管理する。よっ
て、薬液専用処理槽内の薬液の温度を均一かつ一定に保
つことができる。Further, in the substrate processing apparatus of the second aspect, the chemical solution is introduced from the chemical solution exclusive treatment tank, and the derived chemical solution is introduced again into the chemical solution exclusive treatment tank, and a temperature adjusting means for adjusting the temperature of the chemical solution. Since the circulation mechanism circulates the chemical liquid to convect the chemical liquid in the chemical liquid processing tank, the temperature control means controls the temperature of the chemical liquid to control the temperature of the chemical liquid in the chemical liquid processing tank. To do. Therefore, it is possible to keep the temperature of the chemical liquid in the chemical liquid processing tank uniform and constant.
【００１６】また、請求項３の基板処理装置では、薬液
専用処理槽が高温酸液による薬液処理を行うので、薬液
を均質でかつ均一高温の状態に保つことが必要とされる
かかる高温酸液による薬液処理を効率的で良好なものと
することができる。Further, in the substrate processing apparatus of the third aspect, since the processing bath for exclusive use of the chemical liquid performs the chemical liquid treatment with the high temperature acid liquid, it is necessary to keep the chemical liquid in a homogeneous and uniform high temperature state. The chemical solution treatment by can be made efficient and favorable.
【００１７】また、請求項４の基板処理装置では、薬液
専用処理槽が硫酸と過酸化水素水との混合液または燐酸
または硫酸または硝酸のうちいずれかの薬液による薬液
処理を行うので、均質でかつ均一高温の状態に保つこと
が必要とされる前記硫酸と過酸化水素水との混合液また
は燐酸または硫酸または硝酸のうちいずれかの薬液によ
る処理を効率的で良好なものとすることができる。Further, in the substrate processing apparatus according to the fourth aspect, since the processing bath dedicated to the chemical liquid performs the chemical liquid treatment with the mixed liquid of sulfuric acid and hydrogen peroxide solution or the chemical liquid of phosphoric acid, sulfuric acid or nitric acid, it is homogeneous. In addition, it is possible to efficiently and satisfactorily perform the treatment with the liquid mixture of the sulfuric acid and the hydrogen peroxide solution or the chemical liquid of phosphoric acid, sulfuric acid or nitric acid, which is required to be kept at a uniform high temperature state. .
【００１８】また、請求項５の基板処理装置では、薬液
専用処理槽がバッファードフッ酸による薬液処理を行う
ので、薬液を均質でかつ均一温度の状態に保つことが必
要とされるかかるバッファードフッ酸による薬液処理を
効率的で良好なものとすることができる。Further, in the substrate processing apparatus according to the present invention, since the processing bath for exclusive use of the chemical solution performs the chemical solution treatment with the buffered hydrofluoric acid, it is necessary to keep the chemical solution in a homogeneous and uniform temperature state. The chemical solution treatment with hydrofluoric acid can be made efficient and favorable.
【００１９】また、請求項６の基板処理装置では、多機
能処理槽が基板に乾燥処理を施すので、基板を槽外に取
り出すことなく乾燥処理を終了することができ、大気の
影響による汚染等の弊害を防止できる。Further, in the substrate processing apparatus of the sixth aspect, since the multifunctional processing tank performs the drying processing on the substrate, the drying processing can be completed without taking the substrate out of the tank, and the pollution due to the influence of the atmosphere or the like. The harmful effects of can be prevented.
【００２０】[0020]
【実施例】以下、図面を参照しつつ、この発明の具体的
な実施例について説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Specific embodiments of the present invention will be described below with reference to the drawings.
【００２１】図１は、第１実施例の基板処理装置の構成
を示す斜視図である。図示のように、この装置は、未処
理基板を収納しているカセットＣが投入されるカセット
搬入部２と、このカセット搬入部２からのカセットＣが
載置され内部から複数の基板が同時に取り出される基板
取出部３と、カセットＣから取り出された未処理基板が
順次洗浄処理される基板処理部５と、洗浄処理後の複数
の処理済み基板が同時にカセット中に収納される基板収
納部７と、処理済み基板を収納しているカセットＣが払
い出されるカセット搬出部８とを備える。さらに、装置
の前側には、基板取出部３から基板収納部７に亙って基
板移載搬送機構９が配置されており、洗浄処理前、洗浄
処理中及び洗浄処理後の基板を一箇所から別の箇所に搬
送したり移載したりする。FIG. 1 is a perspective view showing the structure of the substrate processing apparatus of the first embodiment. As shown in the figure, this apparatus has a cassette loading section 2 into which a cassette C containing unprocessed substrates is loaded, and a cassette C from the cassette loading section 2 is placed and a plurality of substrates are simultaneously taken out from the inside. A substrate unloading unit 3 for cleaning, a substrate processing unit 5 for sequentially cleaning unprocessed substrates taken out from the cassette C, and a substrate storing unit 7 for storing a plurality of processed substrates after the cleaning process in a cassette at the same time. And a cassette unloading section 8 from which the cassette C containing the processed substrate is delivered. Further, on the front side of the apparatus, a substrate transfer / transport mechanism 9 is arranged from the substrate unloading unit 3 to the substrate housing unit 7, and the substrates before the cleaning process, during the cleaning process, and after the cleaning process are provided from one place. Transport or transfer to another location.
【００２２】カセット搬入部２は、水平移動、昇降移動
及び垂直軸回りの回転が可能なカセット移載ロボットＣ
Ｒ1を備え、カセットステージ２１ａ上の所定位置に載
置された一対のカセットＣを基板取出部３に移載する。The cassette loading section 2 is a cassette transfer robot C capable of horizontal movement, vertical movement and rotation about a vertical axis.
A pair of cassettes C, which is equipped with R1 and is placed at a predetermined position on the cassette stage 21a, is transferred to the substrate unloading section 3.
【００２３】基板取出部３は、昇降移動する一対のホル
ダ３ａ、３ｂを備える。そして、各ホルダ３ａ、３ｂの
上面にはガイド溝が刻設されており、カセットＣ中の未
処理基板を垂直かつ互いに平行に支持することを可能に
する。したがって、ホルダ３ａ、３ｂが上昇すると、カ
セットＣ中から基板が取り出される。カセットＣ中から
取り出された基板は、基板移載搬送機構９に設けた搬送
ロボットＴＲに受け渡され、水平移動後に基板処理部５
に投入される。The substrate take-out section 3 is provided with a pair of holders 3a and 3b which move up and down. A guide groove is formed on the upper surface of each of the holders 3a and 3b, so that the unprocessed substrates in the cassette C can be supported vertically and parallel to each other. Therefore, when the holders 3a and 3b move up, the substrate is taken out from the cassette C. The substrate taken out from the cassette C is transferred to the transfer robot TR provided in the substrate transfer / transfer mechanism 9, and after the horizontal movement, the substrate processing unit 5 is moved.
It is thrown into.
【００２４】基板処理部５は、薬液を収容する薬液槽Ｃ
Ｂを備える薬液処理部５２と、純水を収容する水洗槽Ｗ
Ｂを備える水洗処理部５４と、単一槽内で各種の薬液処
理や水洗処理を行う多機能槽ＯＢを備える多機能処理部
５６と、スピンドライヤを内蔵する乾燥部５８とから構
成される。The substrate processing section 5 is a chemical liquid tank C containing a chemical liquid.
Chemical solution treating section 52 including B, and washing tank W containing pure water
It is composed of a water washing processing section 54 including B, a multi-function processing section 56 including a multi-function tank OB that performs various chemical solution processing and water washing processing in a single tank, and a drying section 58 having a built-in spin dryer.
【００２５】基板処理部５において、薬液処理部５２及
び水洗処理部５４の後方側には、第１基板浸漬機構５５
が配置されており、これに設けた上下動及び横行可能な
リフタヘッドＬＨ1によって、搬送ロボットＴＲから受
け取った基板を薬液処理部５２の薬液槽ＣＢに浸漬した
り、水洗処理部５４の水洗槽ＷＢに浸漬したりする。ま
た、多機能処理部５６の後方側には、第２基板浸漬機構
５７が配置されており、これに設けた上下動可能なリフ
タヘッドＬＨ2によって、搬送ロボットＴＲから受け取
った基板を多機能処理部５６の多機能槽ＯＢ内に支持す
る。In the substrate processing unit 5, a first substrate dipping mechanism 55 is provided on the rear side of the chemical liquid processing unit 52 and the water washing processing unit 54.
Is disposed, and the lifter head LH1 provided on this is capable of vertically moving and traversing, so that the substrate received from the transfer robot TR is immersed in the chemical solution tank CB of the chemical solution processing unit 52, or in the water washing tank WB of the water washing processing unit 54. Immerse yourself. Further, a second substrate dipping mechanism 57 is arranged on the rear side of the multi-function processing unit 56, and a substrate received from the transport robot TR is transferred to the multi-function processing unit 56 by a vertically movable lifter head LH2. It is supported in the multi-function tank OB.
【００２６】基板収納部７は、基板取出部３と同様の構
造を有し、昇降可能な一対のホルダ７ａ、７ｂによっ
て、搬送ロボットＴＲに把持された処理済み基板を受け
取ってカセットＣ中に収納する。The substrate storage unit 7 has a structure similar to that of the substrate extraction unit 3, and a pair of holders 7a and 7b which can be moved up and down receive the processed substrate held by the transfer robot TR and store it in the cassette C. To do.
【００２７】また、カセット搬出部８は、カセット搬入
部２と同様の構造を有し、移動自在のカセット移載ロボ
ットＣＲ2を備え、基板収納部７上に載置された一対の
カセットをカセットステージ８ａ上の所定位置に移載す
る。The cassette carry-out section 8 has a structure similar to that of the cassette carry-in section 2 and is provided with a movable cassette transfer robot CR2, and a pair of cassettes mounted on the substrate storage section 7 is connected to a cassette stage. It is transferred to a predetermined position on 8a.
【００２８】基板移載搬送機構９は、水平移動及び昇降
移動が可能な搬送ロボットＴＲを備える。そして、この
搬送ロボットＴＲに設けた一対の回転可能なハンド９
１、９２よって基板を把持することにより、基板取出部
３のホルダ３ａ、３ｂに支持された基板を基板処理部５
の第１基板浸漬機構５５に設けたリフタヘッドＬＨ1側
に移載したり、このリフタヘッドＬＨ1側から隣りの第
２基板浸漬機構５７に設けたリフタヘッドＬＨ2側に移
載したり、このリフタヘッドＬＨ2側から基板収納部７
のホルダ７ａ、７ｂに移載したりする。The substrate transfer / transport mechanism 9 includes a transport robot TR capable of horizontal movement and vertical movement. Then, a pair of rotatable hands 9 provided on the transport robot TR.
By gripping the substrate with the substrates 1 and 92, the substrate supported by the holders 3a and 3b of the substrate unloading unit 3 is moved to the substrate processing unit 5
Of the first substrate dipping mechanism 55 to the lifter head LH1 side, or from the lifter head LH1 side to the adjacent second substrate dipping mechanism 57 of the lifter head LH2 side, or from the lifter head LH2 side to the substrate. Storage 7
It is transferred to the holders 7a and 7b.
【００２９】図２は、図１の基板処理装置を正面側から
見た場合の構造を模式的に示す図である。薬液処理部５
２に設けた薬液槽ＣＢの底部側には、バルブＶ1を介し
て薬液Ｃ0の供給用配管が接続されるとともに、バルブ
Ｖ2を介してドレン用配管が接続されている。さらに、
薬液槽ＣＢには、循環機構５２ａが設けられており、薬
液槽ＣＢ上部からオーバーフローした薬液Ｃ0を圧送す
るポンプＰとこのポンプＰから圧送されてきた薬液Ｃ0
を濾過するフィルタＦとを備える。そして循環機構５２
ａにはフィルタＦで濾過された薬液Ｃ0の温度調節手段
である温調器Ｔが設けられている。温調器Ｔで所望の温
度に維持された薬液Ｃ0は、薬液槽ＣＢの底部側から再
度この槽に戻されて還流することとなる。このように、
循環機構５２ａが薬液槽ＣＢから薬液Ｃ0を導き出し、
導き出された薬液Ｃ0を再び薬液槽ＣＢに導入すること
で薬液槽ＣＢ内の薬液Ｃ0を対流させ、また、温調器Ｔ
が薬液Ｃ0の温度を調節する。よって、薬液槽ＣＢ内の
薬液Ｃ0の温度を均一かつ一定に保つことができる。ま
た、循環機構５２ａは薬液Ｃ0を濾過するフィルタＦを
備えるので、薬液槽ＣＢに環流される薬液Ｃ0は常に清
浄に保たれる。なお、本実施例では温調器Ｔを循環機構
５２ａに設けたが薬液槽ＣＢ内に設けても良い。FIG. 2 is a diagram schematically showing the structure of the substrate processing apparatus of FIG. 1 when viewed from the front side. Chemical processing unit 5
At the bottom side of the chemical liquid tank CB provided in No. 2, a pipe for supplying the chemical liquid C0 is connected via a valve V1 and a drain pipe is connected via a valve V2. further,
The chemical bath CB is provided with a circulation mechanism 52a, and a pump P for pumping the chemical C0 overflowing from the upper part of the chemical bath CB and the chemical C0 pumped from this pump P are supplied.
And a filter F for filtering. And the circulation mechanism 52
At a, a temperature controller T which is a temperature adjusting means for the chemical liquid C0 filtered by the filter F is provided. The chemical solution C0 maintained at the desired temperature by the temperature controller T is returned to the tank from the bottom side of the chemical solution tank CB for reflux. in this way,
The circulation mechanism 52a guides the chemical solution C0 from the chemical solution tank CB,
By introducing the derived chemical liquid C0 into the chemical liquid tank CB again, the chemical liquid C0 in the chemical liquid tank CB is convected, and the temperature controller T
Regulates the temperature of the drug solution C0. Therefore, the temperature of the chemical liquid C0 in the chemical liquid tank CB can be kept uniform and constant. Further, since the circulation mechanism 52a includes the filter F for filtering the chemical liquid C0, the chemical liquid C0 circulated in the chemical liquid tank CB is always kept clean. Although the temperature controller T is provided in the circulation mechanism 52a in the present embodiment, it may be provided in the chemical liquid tank CB.
【００３０】この薬液槽ＣＢに収容される薬液Ｃ0は１
００℃より高い高温状態で使用する薬液（高温酸液）や
精密な温度調節が必要な薬液、また、純水で希釈しない
高濃度の状態で使用する薬液であることが望ましい。こ
のような薬液Ｃ0として、例えば、硫酸過水（硫酸と過
酸化水素水との混合溶液）は硫酸と過酸化水素水とを体
積比４：１〜２：１に混合し、純水で希釈せず、１３０
℃以上の高温状態にて使用する。また、燐酸、硝酸、硫
酸（オゾンを併用する場合を含む）、は純水で希釈せず
に投入され１６０℃以上の高温状態にて使用する。ま
た、精密な温度調節が必要な薬液Ｃ0としては例えばバ
ッファードフッ酸があり、常温（２０℃〜２５℃）にて
誤差０．１℃程度以下の精密な温度調節が必要とされ
る。The chemical solution C0 contained in this chemical solution tank CB is 1
It is desirable to use a chemical solution (high temperature acid solution) used in a high temperature state higher than 00 ° C., a chemical solution that requires precise temperature control, or a chemical solution that is used in a high concentration state that is not diluted with pure water. As such a chemical solution C0, for example, sulfuric acid / hydrogen peroxide mixture (a mixed solution of sulfuric acid and hydrogen peroxide solution) is prepared by mixing sulfuric acid and hydrogen peroxide solution at a volume ratio of 4: 1 to 2: 1 and diluting with pure water. Without, 130
Use at high temperature above ℃. Further, phosphoric acid, nitric acid, and sulfuric acid (including the case where ozone is used together) are added without being diluted with pure water and used at a high temperature of 160 ° C. or higher. Further, as the chemical solution C0 that requires precise temperature control, there is, for example, buffered hydrofluoric acid, which requires precise temperature control with an error of about 0.1 ° C. or less at room temperature (20 ° C. to 25 ° C.).
【００３１】この薬液槽ＣＢには１種類の薬液Ｃ0が収
容され、異なる薬液や純水と置換されることはない。従
って、薬液Ｃ0は常に一定高温に調節される。また、高
濃度の薬液を薬液Ｃ0として用いる場合においても、薬
液Ｃ0が異なる薬液や純水と置換されることはないので
薬液Ｃ0を常に高濃度に維持できる。This chemical liquid tank CB contains one type of chemical liquid C0 and is not replaced with a different chemical liquid or pure water. Therefore, the chemical liquid C0 is always adjusted to a constant high temperature. Further, even when a high-concentration chemical liquid is used as the chemical liquid C0, the chemical liquid C0 is not replaced with a different chemical liquid or pure water, so that the chemical liquid C0 can always be maintained at a high concentration.
【００３２】水洗処理部５４に設けた水洗槽ＷＢの底部
側には、バルブＶ3を介して純水Ｗ0の供給用配管が接続
されるとともに、バルブＶ4を介してドレン用配管が接
続されている。On the bottom side of the washing tank WB provided in the washing section 54, a pure water W0 supply pipe is connected via a valve V3, and a drain pipe is connected via a valve V4. .
【００３３】多機能処理部５６に設けた多機能槽ＯＢ
は、特別な温調を必ずしも必要としない薬液や純水が順
次投入される構造となっていて、単一の槽で各種の処理
を連続して実行することができる。この多機能槽ＯＢの
底部側には、バルブＶ5〜Ｖ8を介して、薬液Ｃ1〜Ｃ3及
び純水Ｗ1のいずれかを選択的に供給可能な供給用配管
が接続されているとともに、バルブＶ9を介してドレン
用配管が接続されている。また、多機能槽ＯＢの上部に
は、バルブＶ10を介してドレン用配管が接続されてお
り、オーバーフローした薬液Ｃ1〜Ｃ3や純水Ｗ1を槽外
に排出する。さらに、多機能槽ＯＢには、循環機構５６
ａが設けられており、多機能槽ＯＢ上部からオーバーフ
ローしたいずれかの薬液Ｃ1〜Ｃ3を圧送するポンプＰと
このポンプＰから圧送されてきた薬液を濾過するフィル
タＦとを備える。フィルタＦで濾過された薬液Ｃ1〜Ｃ3
は、多機能槽ＯＢの底部側からこの槽に戻されて還流す
ることとなる。なお、図示していないが、多機能槽ＯＢ
の底部には、循環機構５６ａから戻ってきたいずれかの
薬液Ｃ1〜Ｃ3を槽内に一様に拡散させて槽内の薬液Ｃ1
〜Ｃ3に一様な対流を形成する機構を備える。薬液Ｃ1〜
Ｃ3にこのように一様な対流を形成することにより、多
機能槽ＯＢ内の薬液Ｃ1〜Ｃ3を常に均質なものとするこ
とができる。Multifunctional tank OB provided in the multifunctional processing unit 56
Has a structure in which chemicals and pure water that do not necessarily require special temperature control are sequentially added, and various kinds of processing can be continuously executed in a single tank. A supply pipe capable of selectively supplying any one of the chemical liquids C1 to C3 and pure water W1 via valves V5 to V8 is connected to the bottom side of the multifunctional tank OB, and a valve V9 is provided. The drain pipe is connected via the. Further, a drain pipe is connected to the upper part of the multi-function tank OB via a valve V10, and the overflowed chemical solutions C1 to C3 and pure water W1 are discharged to the outside of the tank. Furthermore, the multi-function tank OB has a circulation mechanism 56.
a is provided and is provided with a pump P for pumping any one of the chemical liquids C1 to C3 overflowing from the upper part of the multi-function tank OB and a filter F for filtering the chemical liquid pumped from the pump P. Chemicals C1 to C3 filtered by filter F
Will be returned to the multi-functional tank OB from the bottom side and returned to this tank. Although not shown, the multifunctional tank OB
At the bottom of the tank, any of the liquid chemicals C1 to C3 returned from the circulation mechanism 56a is evenly diffused in the tank so that the liquid chemical C1 in the tank is
A mechanism for forming uniform convection in C3 is provided. Chemical liquid C1〜
By forming such uniform convection in C3, the chemicals C1 to C3 in the multifunctional tank OB can be made uniform at all times.
【００３４】この多機能槽ＯＢに収容される薬液Ｃ1〜
Ｃ3としては、１００℃より高い高温に維持する必要が
なく、精密な温度調節が必要なく、かつ、高濃度に維持
する必要がないものが望ましい。このような薬液とし
て、例えば、塩酸と過酸化水素水との混合溶液である塩
酸過水は塩酸と過酸化水素水と純水とを１：１：６〜
１：２：１５の体積比で混合することによって希釈さ
れ、４０℃〜８５℃の温度にて使用される。また、アン
モニア水溶液と過酸化水素水との混合溶液であるアンモ
ニア過水は、アンモニア水溶液と過酸化水素水と純水と
を１：１：５〜１：２：７の体積比で混合することによ
って希釈され、４０℃〜８５℃の温度で使用される。さ
らに、フッ酸は、フッ酸と純水とを１：２０〜１：１０
００の体積比で混合することによって希釈され、常温で
使用される。The chemical liquid C1 to be stored in this multifunctional tank OB
It is desirable that C3 does not need to be maintained at a temperature higher than 100 ° C., does not require precise temperature control, and does not need to be maintained at a high concentration. As such a chemical solution, for example, hydrochloric acid / hydrogen peroxide mixture, which is a mixed solution of hydrochloric acid and hydrogen peroxide solution, contains hydrochloric acid, hydrogen peroxide solution, and pure water in a ratio of 1: 1: 6.
It is diluted by mixing in a volume ratio of 1: 2: 15 and used at a temperature of 40 ° C to 85 ° C. In addition, the ammonia-hydrogen peroxide mixture, which is a mixed solution of an aqueous ammonia solution and a hydrogen peroxide solution, should be prepared by mixing the aqueous ammonia solution, the hydrogen peroxide solution, and pure water in a volume ratio of 1: 1: 5 to 1: 2: 7. Diluted with and used at a temperature of 40 ° C to 85 ° C. Further, hydrofluoric acid is prepared by mixing hydrofluoric acid and pure water in a ratio of 1:20 to 1:10.
It is diluted by mixing in a volume ratio of 00 and used at room temperature.
【００３５】以下、図２を参照して第１実施例の基板処
理装置の動作を簡単に説明する。基板取出部３上のカセ
ットＣ中の基板ＷＦは、上昇する一対のホルダ３ａ、３
ｂによってカセットＣ外に取り出され、搬送ロボットＴ
Ｒの一対のハンド９１、９２に把持されてこれに受け渡
される。一対のハンド９１、９２に把持された基板ＷＦ
は、水平方向に搬送されてリフタヘッドＬＨ1の保持部
材５５ａに受け渡される。リフタヘッドＬＨ1の保持部
材５５ａに保持された基板ＷＦは、そのまま薬液処理部
５２の薬液槽ＣＢに浸漬され薬液処理が施された後、水
洗処理部５４の水洗槽ＷＢに浸漬されて水洗処理が施さ
れる。次に、水洗処理後の基板ＷＦがリフタヘッドＬＨ
1の保持部材５５ａ側から搬送ロボットＴＲの一対のハ
ンド９１、９２側に受け渡され、これら一対のハンド９
１、９２からリフタヘッドＬＨ2の保持部材５７ａに受
け渡される。次に、この保持部材５７ａに保持された水
洗処理後の基板ＷＦは、多機能槽０Ｂに浸漬されて各種
薬液処理や水洗処理が繰り返し施され、最後に仕上げの
水洗処理が施される。次に、水洗処理後の基板ＷＦがリ
フタヘッドＬＨ2の保持部材５７ａから搬送ロボットＴ
Ｒの一対のハンド９１、９２に受け渡される。次に、一
対のハンド９１、９２に支持された基板ＷＦは、乾燥部
５８に移載されてここで乾燥処理される。最後に、乾燥
後の基板ＷＦは、搬送ロボットＴＲの一対のハンド９
１、９２に受け渡された後、一対のホルダ７ａ、７ｂに
受け渡されてカセットＣ中に収納される。The operation of the substrate processing apparatus of the first embodiment will be briefly described below with reference to FIG. The substrate WF in the cassette C on the substrate unloading section 3 is raised by a pair of holders 3a, 3a.
It is taken out of the cassette C by b and the transfer robot T
It is gripped by a pair of R hands 91 and 92 and delivered to it. Substrate WF held by the pair of hands 91, 92
Are conveyed in the horizontal direction and transferred to the holding member 55a of the lifter head LH1. The substrate WF held by the holding member 55a of the lifter head LH1 is directly immersed in the chemical bath CB of the chemical treatment unit 52 to be subjected to the chemical treatment, and then immersed in the washing bath WB of the washing treatment unit 54 to undergo the washing treatment. To be done. Next, the substrate WF after the washing process is the lifter head LH.
The one holding member 55a side is transferred to the pair of hands 91 and 92 of the transport robot TR, and the pair of hands 9 and
It is transferred from the first and the second 92 to the holding member 57a of the lifter head LH2. Next, the water-washed substrate WF held by the holding member 57a is dipped in the multi-functional bath 0B, repeatedly subjected to various chemical liquid treatments and water washing treatments, and finally subjected to finishing water washing treatment. Next, the substrate WF after the washing process is transferred from the holding member 57a of the lifter head LH2 to the transfer robot T.
It is delivered to the pair of R hands 91 and 92. Next, the substrate WF supported by the pair of hands 91 and 92 is transferred to the drying unit 58 and dried there. Finally, the dried substrate WF is processed by the pair of hands 9 of the transfer robot TR.
After being transferred to the holders 1 and 92, they are transferred to the pair of holders 7a and 7b and stored in the cassette C.
【００３６】多機能処理部５６における動作をより具体
的に説明すると、例えば多機能槽０Ｂ内に薬液Ｃ1を満
たした状態で、保持部材５７ａに保持された基板ＷＦを
槽内に浸漬して所定時間の経過を待って薬液Ｃ1による
処理を終了する。この状態で、下方から純水Ｗ1を供給
して薬液Ｃ1をオーバーフローさせながら槽内の薬液Ｃ1
を純水Ｗ1に置換して基板ＷＦの水洗を終了する。次
に、下方から薬液Ｃ2を供給して純水Ｗ1をオーバーフロ
ーさせながら槽内の純水Ｗ1を薬液Ｃ2に置換して槽内に
支持された基板ＷＦに薬液Ｃ2による処理を開始し、所
定時間の経過を待って薬液Ｃ2による処理を終了する。
この状態で、下方から純水Ｗ1を再度供給して薬液Ｃ2を
オーバーフローさせながら槽内の薬液Ｃ2を純水Ｗ1に置
換して基板ＷＦの水洗を終了する。以上のような処理を
繰返すことにより、所望の薬液処理を適宜組み合わせた
処理を基板ＷＦに連続的に施すことができる。この際、
基板ＷＦが大気に触れることがないので、大気の影響で
基板ＷＦ表面に不要な膜が形成される等の弊害が生じに
くい。また、基板ＷＦが槽間で搬送されないので、汚染
やパーティクルの付着の抑制が容易となる。The operation of the multi-function processing unit 56 will be described more specifically. For example, the multi-function tank 0B is filled with the chemical liquid C1 and the substrate WF held by the holding member 57a is dipped in the tank to a predetermined level. The process with the chemical liquid C1 is completed after waiting the passage of time. In this state, while supplying pure water W1 from below to overflow the chemical solution C1, the chemical solution C1 in the tank
Is replaced with pure water W1 to complete the washing of the substrate WF with water. Next, while supplying the chemical liquid C2 from below to allow the pure water W1 to overflow, the pure water W1 in the tank is replaced with the chemical liquid C2 to start the treatment with the chemical liquid C2 on the substrate WF supported in the tank for a predetermined time. The process with the chemical liquid C2 is terminated after the passage of.
In this state, the pure water W1 is supplied again from below to allow the chemical liquid C2 to overflow while the chemical liquid C2 in the tank is replaced with pure water W1 to complete the washing of the substrate WF. By repeating the above-described processing, it is possible to continuously perform the processing in which the desired chemical liquid processing is appropriately combined, on the substrate WF. On this occasion,
Since the substrate WF does not come into contact with the atmosphere, adverse effects such as formation of an unnecessary film on the surface of the substrate WF due to the influence of the atmosphere are unlikely to occur. Moreover, since the substrate WF is not transported between the tanks, it is easy to suppress contamination and particle adhesion.
【００３７】なお、以上の処理では薬液や純水をオーバ
ーフローさせながら置換させることとしているが、現在
処理中の薬液や純水を一旦ドレンした後に次に処理すべ
き薬液や純水を投入することもできる。この場合、基板
ＷＦが大気に晒されるが、基板ＷＦが槽間で搬送されな
いので汚染やパーティクルの付着の抑制が比較的容易に
なるとともに、単一槽で多機能を実現しているので基板
洗浄全体としての小型化を図ることができる。In the above processing, the chemical solution or pure water is replaced while overflowing. However, the chemical solution or pure water currently being processed is once drained, and then the chemical solution or pure water to be processed next is introduced. You can also In this case, the substrate WF is exposed to the atmosphere, but since the substrate WF is not transported between the tanks, it is relatively easy to suppress the contamination and the adhesion of particles, and the single tank realizes multiple functions, so that the substrate cleaning is performed. It is possible to reduce the size as a whole.
【００３８】図３は、搬送ロボットＴＲに設けた一対の
ハンド９１、９２の構造及び動作を説明する図である。
図３（ａ）は、乾燥した複数の基板ＷＦ1を一対のドラ
イ側ガイド溝９１ａ、９２ａによって支持した状態を示
す図であり、図３（ｂ）は、純水が付着した複数の基板
ＷＦ2を一対のウェット側ガイド溝９１ｂ、９２ｂによ
って支持した状態を示す図である。図３（ａ）のように
乾燥した基板ＷＦ1を扱う場合、各ハンド９１、９２の
一端側の対向面にそれぞれ平行等間隔で刻設されている
ドライ側ガイド溝９１ａ、９２ａによって、基板取出部
３や乾燥部５８からの乾燥した基板ＷＦ1を垂直かつ等
間隔に支持する。図３（ｂ）のように純水が付着した基
板ＷＦ2を扱う場合、各ハンド９１、９２を図３（ａ）
の状態からそれぞれ水平回転軸９１ｃ、９２ｃを中心と
して１８０゜回転させる。そして、その他端側の対向面
にそれぞれ平行等間隔で刻設されている一対のウェット
側ガイド溝９１ｂ、９２ｂによって水洗処理部５４や多
機能処理部５６からの純水が付着した基板ＷＦ2を垂直
かつ等間隔に支持する。このように、ドライ側ガイド溝
９１ａ、９２ａによって乾燥した基板ＷＦ1のみを支持
し、ウェット側ガイド溝９１ｂ、９２ｂによって純水の
付着した基板ＷＦ2のみを支持するとういう、ハンドリ
ング部の使い分けにより、一対のハンド９１、９２の乾
燥や洗浄工程を必ずしも必要としなくなる。FIG. 3 is a view for explaining the structure and operation of the pair of hands 91, 92 provided on the transport robot TR.
FIG. 3A is a diagram showing a state in which a plurality of dried substrates WF1 are supported by a pair of dry side guide grooves 91a and 92a, and FIG. 3B shows a plurality of substrates WF2 to which pure water is attached. It is a figure showing the state supported by a pair of wet side guide grooves 91b and 92b. When handling the dried substrate WF1 as shown in FIG. 3A, the substrate unloading section is formed by the dry-side guide grooves 91a and 92a which are formed at equal intervals in parallel on the facing surfaces on the one end sides of the hands 91 and 92, respectively. 3 and the dried substrate WF1 from the drying section 58 are supported vertically and at equal intervals. When handling the substrate WF2 to which pure water has adhered as shown in FIG. 3B, each of the hands 91 and 92 is shown in FIG.
From the above state, the horizontal rotation shafts 91c and 92c are rotated by 180 °. Then, the pair of wet-side guide grooves 91b and 92b, which are formed in parallel with each other on the opposite surface on the other end side, respectively, make the substrate WF2 to which the pure water from the washing processing section 54 or the multifunctional processing section 56 adheres vertically. And support at equal intervals. As described above, the dry side guide grooves 91a and 92a support only the dried substrate WF1, and the wet side guide grooves 91b and 92b support only the substrate WF2 to which pure water is adhered. It is not always necessary to dry or wash the hands 91 and 92.
【００３９】図４は、第１基板浸漬機構５５に設けたリ
フタヘッドＬＨ1又はその保持部材５５ａの動作を更に
具体的に説明する図である。搬送ロボットＴＲの一対の
ハンド９１、９２（この場合、ドライ側ガイド溝９１
ａ、９２ａを用いている）に支持された基板ＷＦは、薬
液槽ＣＢ上方の第１待機位置にあるリフタヘッドＬＨ1
の保持部材５５ａに移載される（図４（ａ））。この基
板ＷＦを保持した保持部材５５ａは、第１待機位置から
薬液槽ＣＢ中の第１浸漬位置に降下する（図４
（ｂ））。薬液処理を終了した基板ＷＦを保持する保持
部材５５ａは、第１浸漬位置から薬液槽ＣＢ上方の第１
退避位置に上昇する（図４（ｃ））。この基板ＷＦを保
持する保持部材５５ａは、薬液槽ＣＢ上方の第１退避位
置から水洗槽ＷＢ上方の第２退避位置に横行する（図４
（ｄ））。この基板ＷＦを保持した保持部材５５ａは、
第２待機位置から水洗槽ＷＢ中の第２浸漬位置に降下す
る（図４（ｅ））。水洗処理を終了した基板ＷＦを保持
する保持部材５５ａは、第２浸漬位置から水洗槽ＷＢ上
方の第２退避位置に上昇し、この基板ＷＦを搬送ロボッ
トＴＲの一対のハンド９１、９２（この場合、図３
（ｂ）に示すウェット側ガイド溝９１ｂ、９２ｂを用い
る）に移載する（図４（ｆ））。このような動作を行っ
た場合、保持部材５５ａは常に水洗された状態で一対の
ハンド９１、９２に支持された基板ＷＦを受け取ること
ができるだけでなく、一対のハンド９１、９２も、常に
水洗された基板ＷＦを保持部材５５ａから受け取ること
ができる。よって、一対のハンド９１、９２を基板ＷＦ
の処理ごとに洗浄する必要がなくなり、スループットが
向上するとともに、ハンド用の専用洗浄機構を省略して
省スペース化を図ることができる。FIG. 4 is a diagram for more specifically explaining the operation of the lifter head LH1 or its holding member 55a provided in the first substrate immersion mechanism 55. A pair of hands 91, 92 of the transport robot TR (in this case, the dry side guide groove 91
substrate WF supported by the lifter head LH1 located at the first standby position above the chemical bath CB.
Is mounted on the holding member 55a (FIG. 4A). The holding member 55a holding the substrate WF descends from the first standby position to the first immersion position in the chemical liquid tank CB (FIG. 4).
(B)). The holding member 55a that holds the substrate WF that has completed the chemical liquid treatment is located above the chemical liquid tank CB from the first immersion position.
Ascend to the retracted position (FIG. 4 (c)). The holding member 55a that holds the substrate WF traverses from the first retracted position above the chemical bath CB to the second retracted position above the washing bath WB (FIG. 4).
(D)). The holding member 55a holding the substrate WF is
It descends from the second standby position to the second immersion position in the washing tank WB (FIG. 4 (e)). The holding member 55a that holds the substrate WF that has completed the water washing process moves up from the second immersion position to the second retracted position above the water washing tank WB, and moves the substrate WF to the pair of hands 91, 92 (in this case, the transport robot TR). , Fig. 3
It is transferred to the wet side guide grooves 91b and 92b shown in (b) (FIG. 4 (f)). When such an operation is performed, not only the holding member 55a can receive the substrate WF supported by the pair of hands 91 and 92 in a state of being always washed with water, but also the pair of hands 91 and 92 is always washed with water. The substrate WF can be received from the holding member 55a. Therefore, the pair of hands 91 and 92 are attached to the substrate WF.
Since it is not necessary to perform cleaning for each processing, throughput is improved, and a dedicated cleaning mechanism for the hand can be omitted to save space.
【００４０】図５は、第２実施例の基板処理装置の正面
構造を模式的に示す図である。第２実施例は、第１実施
例の変形例であるので、第１実施例と共通する部分につ
いては同一符号を付して説明を省略する。FIG. 5 is a diagram schematically showing the front structure of the substrate processing apparatus of the second embodiment. Since the second embodiment is a modification of the first embodiment, the same parts as those of the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
【００４１】図からも明らかなように、第２実施例の基
板処理装置は、スピンドライヤを内蔵する乾燥部５８を
設けていない。その代わり、多機能槽ＯＢを備える多機
能処理部５６が減圧乾燥も行い得るものとなっている。
即ち、多機能槽ＯＢは内部を減圧することができる図示
せぬチャンバー内に配されており、純水Ｗ1による最終
的なリンスの後に、多機能槽ＯＢ中の純水Ｗ1表面にア
ルコール蒸気Ａを供給し、基板ＷＦの引き上げの際にそ
の表面に付着した水分をアルコールで置換し、更にチャ
ンバー内を減圧することによって基板ＷＦを迅速かつ均
一に乾燥することができる。このように、多機能槽ＯＢ
内で薬液及び純水による処理を一括して実行することが
できるのみならず、乾燥までも一括して実行することが
できるので、基板ＷＦを槽外に取り出すことなく乾燥処
理することができ、ウォータマークの発生その他の大気
の影響による汚染等の弊害を防止できる。As is clear from the figure, the substrate processing apparatus of the second embodiment does not have the drying section 58 incorporating the spin dryer. Instead, the multifunctional processing unit 56 including the multifunctional tank OB can also perform reduced pressure drying.
That is, the multifunctional tank OB is arranged in a chamber (not shown) capable of decompressing the inside thereof, and after the final rinse with the pure water W1, the alcohol vapor A on the surface of the pure water W1 in the multifunctional tank OB. Is supplied to replace the water adhering to the surface of the substrate WF with alcohol when the substrate WF is pulled up, and the inside of the chamber is depressurized, whereby the substrate WF can be dried quickly and uniformly. In this way, the multifunctional tank OB
Not only the treatment with the chemical liquid and the pure water can be performed in a batch, but also the drying can be performed in a batch. Therefore, the drying process can be performed without taking the substrate WF out of the bath. It is possible to prevent harmful effects such as generation of watermarks and other pollutions due to the influence of the atmosphere.
【００４２】以上、実施例に即してこの発明について説
明したが、この発明は上記実施例に限定されるものでは
ない。例えば、薬液処理部５２には単一の薬液槽ＣＢの
みを設けてあるが、この薬液処理部５２に２以上の同種
又は異種の薬液槽を設けて基板処理の工程の多様性を増
すこともできる。さらに、水洗処理部５４にも単一の水
洗槽ＷＢのみを設けてあるが、この水洗処理部５４に２
以上の水洗槽を設けてもよい。Although the present invention has been described with reference to the embodiments, the present invention is not limited to the above embodiments. For example, although the chemical solution processing unit 52 is provided with only a single chemical solution tank CB, the chemical solution processing unit 52 may be provided with two or more chemical solution tanks of the same type or different types to increase the variety of substrate processing steps. it can. Further, the washing treatment section 54 is also provided with only a single washing tank WB.
The above washing tank may be provided.
【００４３】また、上記実施例では、薬液処理部５２と
水洗処理部５４とを一組として１つの処理ユニットを備
えるのみであるが、このような処理ユニットを基板洗浄
装置内に複数設けて基板処理の工程の多様性を増すこと
もできる。この場合、各処理ユニット内では、図２に示
すリフタヘッドＬＨ1と同様に横行可能なリフタヘッド
を備える基板浸漬機構を用いて基板ＷＦの搬送を行う。
もっとも、このように横行可能なリフタヘッドＬＨ1で
はなく、同図に示すリフタヘッドＬＨ2のように昇降移
動のみ可能なリフタヘッドを各薬液槽や各水洗槽に設け
ることもできるが、その場合、搬送ロボットＴＲのハン
ド９１、９２を洗浄するための専用洗浄機構及び専用乾
燥機構を装置内に設ける必要が生じる。Further, in the above-described embodiment, only one processing unit is provided with the chemical liquid processing section 52 and the water washing processing section 54 as one set, but a plurality of such processing units are provided in the substrate cleaning apparatus and the substrate is processed. The variety of processing steps can also be increased. In this case, in each processing unit, the substrate WF is transported using a substrate dipping mechanism including a traversable lifter head similar to the lifter head LH1 shown in FIG.
Of course, instead of the traversable lifter head LH1 as described above, a lifter head such as a lifter head LH2 shown in the figure that can only be moved up and down can be provided in each chemical tank or each washing tank. It is necessary to provide a dedicated cleaning mechanism and a dedicated drying mechanism for cleaning the hands 91 and 92 in the apparatus.
【００４４】また、上記実施例では、多機能処理部５６
に多機能槽０Ｂを一つのみ設けているが、複数の多機能
槽０Ｂを設けて基板処理の多様性を増すこともできる。
さらに、各多機能槽０Ｂは、上記実施例で示した機能の
組み合わせに限るものではなく、単一薬液処理及び水洗
処理の２機能のものとすることができ、さらに水洗処理
及び乾燥処理の２機能のものとすることができ、さらに
３機能以上を用途に応じて適宜組み合わせることができ
る。この際、多機能槽０Ｂに槽内の処理液の温度をある
程度調節することができる温調装置を設けることもでき
る。In the above embodiment, the multi-function processing section 56
Although only one multifunctional tank 0B is provided in the above, it is possible to increase the variety of substrate processing by providing a plurality of multifunctional tanks 0B.
Further, each of the multi-function tanks 0B is not limited to the combination of the functions shown in the above-mentioned embodiment, but may have two functions of the single chemical solution treatment and the water washing treatment, and the two functions of the water washing treatment and the drying treatment. It can have a function, and further, three or more functions can be appropriately combined depending on the application. At this time, the multifunctional tank 0B may be provided with a temperature control device capable of controlling the temperature of the processing liquid in the tank to some extent.
【００４５】なお、上記実施例では薬液処理部５２と多
機能処理部５６との間に水洗処理部５４が設けられてい
る。このため、薬液処理部５２における薬液処理が終了
したときに、多機能処理部５６に何らかの事故があった
場合等、基板ＷＦを多機能処理部５６に搬送することが
できない場合には、薬液処理が終了した基板ＷＦを水洗
処理部５４に投入することができるので、基板ＷＦが薬
液処理部５２で過度に処理を施されることを防止でき、
良好な洗浄を達成できる。In the above embodiment, the water washing processing section 54 is provided between the chemical solution processing section 52 and the multifunctional processing section 56. Therefore, when the substrate WF cannot be transported to the multifunctional processing unit 56, such as when the multifunctional processing unit 56 has an accident when the chemical liquid processing in the chemical liquid processing unit 52 ends, the chemical liquid processing is performed. Since the finished substrate WF can be put into the water washing processing unit 54, it is possible to prevent the substrate WF from being excessively processed in the chemical liquid processing unit 52,
Good cleaning can be achieved.
【００４６】また、上記実施例では明確にしていない
が、基板を連続的に投入する場合にも、上記実施例の基
板処理装置を利用できることはいうまでもない。例え
ば、第１実施例の場合、薬液処理部５２及び水洗処理部
５４を一組とする処理ユニットにカセットＣからの一群
の基板ＷＦを投入する。次に、この処理ユニットでの処
理を終了した一群の基板ＷＦを多機能処理部５６に投入
した後、薬液処理部５２及び水洗処理部５４を一組とす
る処理ユニットにカセットＣからの別の一群の基板ＷＦ
を投入する。次に、この多機能処理部５６での処理を終
了した一群の基板ＷＦを乾燥部５８に投入した後、多機
能処理部５６に薬液処理部５２及び水洗処理部５４を一
組とする処理ユニットからの一群の基板ＷＦを投入し、
この処理ユニットにカセットＣからのさらに別の一群の
基板ＷＦを投入する。以上のような動作を繰り返すこと
により、基板の連続的処理が可能になり、基板処理のス
ループットが増大する。Although not clarified in the above embodiment, it goes without saying that the substrate processing apparatus of the above embodiment can be used even when the substrates are continuously loaded. For example, in the case of the first embodiment, a group of substrates WF from the cassette C is loaded into a processing unit that is a set of the chemical liquid processing section 52 and the water washing processing section 54. Next, after a group of substrates WF that have been processed by this processing unit are put into the multi-function processing unit 56, another processing unit from the cassette C is added to the processing unit including the chemical liquid processing unit 52 and the water washing processing unit 54. A group of substrates WF
Input. Next, after the group of substrates WF that have been processed by the multi-function processing unit 56 is put into the drying unit 58, a processing unit in which the multi-function processing unit 56 includes the chemical liquid processing unit 52 and the water washing processing unit 54 as a set. Inject a group of substrates WF from
Another group of substrates WF from the cassette C is loaded into this processing unit. By repeating the above-described operation, continuous processing of the substrate becomes possible, and the throughput of the substrate processing increases.
【００４７】[0047]
【発明の効果】以上説明したように、請求項１の基板処
理装置によれば基板に所定の薬液処理を施す少なくとも
１つの薬液専用処理槽と、薬液専用処理槽にて薬液処理
を施された基板に薬液処理、水洗処理及び乾燥処理のう
ちの少なくとも２つを施す多機能処理槽とを備えるの
で、高温状態で使用する薬液や精密な温度調節が必要な
薬液、また、高濃度の状態で使用する薬液を用いる処理
では薬液専用処理槽を用い、高温状態で使用する必要が
なく、精密な温度調節が必要ではなく、かつ、高濃度の
状態で使用する必要のない薬液を用いる処理では多機能
処理槽を用いることができる。従って、スループットの
低下を防止できるとともに、省スペースで良好な洗浄を
達成できる。As described above, according to the substrate processing apparatus of the first aspect, the substrate is subjected to the chemical treatment in at least one chemical treatment bath dedicated to the prescribed chemical treatment and the chemical treatment bath. Since the substrate is equipped with a multi-functional processing tank that performs at least two of chemical treatment, water washing treatment and drying treatment, the chemical liquid used at high temperature, the chemical liquid requiring precise temperature control, and the high concentration condition In the process using the chemical solution to be used, it is not necessary to use it at a high temperature in a treatment tank dedicated to the chemical solution, precise temperature control is not required, and it is not necessary to use the chemical solution in a high concentration state. A functional treatment tank can be used. Therefore, it is possible to prevent a decrease in throughput and achieve good cleaning in a space-saving manner.
【００４８】また、請求項２の基板処理装置では薬液専
用処理槽から薬液を導き出し、導き出された薬液を再び
薬液専用処理槽に導入する薬液の循環機構と薬液の温度
調節を行う温度調節手段とを備えており、循環機構が薬
液を循環させて薬液専用処理槽内の薬液に対流を形成さ
せ、また、温度調節手段が薬液の温度を調節することに
よって薬液専用処理槽内の薬液の温度を管理する。よっ
て、薬液専用処理槽内の薬液の温度を均一かつ一定に保
つことができる。従って、良好な基板処理を行うことが
できる。Further, in the substrate processing apparatus of the second aspect, the chemical solution is introduced from the chemical solution exclusive treatment tank, and the chemical solution circulating mechanism for introducing the derived chemical solution into the chemical solution exclusive treatment tank again and the temperature adjusting means for adjusting the temperature of the chemical solution are provided. The circulation mechanism circulates the chemical liquid to form convection in the chemical liquid in the chemical liquid processing tank, and the temperature control unit controls the temperature of the chemical liquid to control the temperature of the chemical liquid in the chemical liquid processing tank. to manage. Therefore, it is possible to keep the temperature of the chemical liquid in the chemical liquid processing tank uniform and constant. Therefore, excellent substrate processing can be performed.
【００４９】また、請求項３の基板処理装置によれば、
薬液専用処理槽が高温酸液による薬液処理を行うので、
薬液を均質でかつ均一高温の状態に保つことが必要とさ
れるかかる高温酸液による薬液処理を効率的で良好なも
のとすることができる。According to the substrate processing apparatus of the third aspect,
Since the processing tank dedicated to chemicals processes chemicals using high-temperature acid solution,
The chemical solution treatment with such a high-temperature acid solution, which requires maintaining the chemical solution in a homogeneous and uniform high temperature state, can be made efficient and satisfactory.
【００５０】また、請求項４の基板処理装置によれば薬
液専用処理槽が硫酸と過酸化水素水との混合液または燐
酸または硫酸または硝酸のうちいずれかの薬液による薬
液処理を行うので、薬液を高温の状態に保つことが必要
とされる前記硫酸と過酸化水素水との混合液または燐酸
または硫酸または硝酸のうちいずれかの薬液による処理
を効率的で良好なものとすることができる。Further, according to the substrate processing apparatus of the present invention, since the processing bath for exclusive use of the chemical liquid carries out the chemical liquid treatment with the mixed liquid of sulfuric acid and hydrogen peroxide solution or the chemical liquid of phosphoric acid, sulfuric acid or nitric acid, The treatment with the mixed solution of sulfuric acid and hydrogen peroxide solution or the chemical solution of phosphoric acid, sulfuric acid or nitric acid, which is required to be kept at a high temperature, can be made efficient and satisfactory.
【００５１】また、請求項５の基板処理装置によれば、
薬液専用処理槽がバッファードフッ酸による薬液処理を
行うので、薬液を均質でかつ均一温度の状態に保つこと
が必要とされるかかるバッファードフッ酸による薬液処
理を効率的で良好なものとすることができる。According to the substrate processing apparatus of the fifth aspect,
Since the chemical treatment tank uses chemical treatment with buffered hydrofluoric acid, it is necessary to keep the chemical in a homogeneous and uniform temperature state. Make chemical treatment with such buffered hydrofluoric acid efficient and good. be able to.
【００５２】また、請求項６の基板処理装置によれば、
多機能処理槽が基板に乾燥処理を施すので、基板を槽外
に取り出すことなく乾燥処理を終了することができ、大
気の影響による汚染等の弊害を防止できる。According to the substrate processing apparatus of the sixth aspect,
Since the multifunctional processing tank performs the drying process on the substrate, the drying process can be completed without taking the substrate out of the tank, and the adverse effects such as pollution due to the influence of the atmosphere can be prevented.
【図１】第１実施例の基板処理装置の全体構造を示す斜
視図である。FIG. 1 is a perspective view showing the overall structure of a substrate processing apparatus according to a first embodiment.
【図２】図１の基板処理装置の正面構造を示す図であ
る。FIG. 2 is a diagram showing a front structure of the substrate processing apparatus of FIG.
【図３】搬送ロボットのハンドの構造及び動作を説明す
る図である。FIG. 3 is a diagram illustrating a structure and an operation of a hand of a transfer robot.
【図４】リフタヘッドの動作を説明する図である。FIG. 4 is a diagram illustrating an operation of a lifter head.
【図５】第２実施例の基板処理装置の正面構造を示す図
である。FIG. 5 is a diagram showing a front structure of a substrate processing apparatus according to a second embodiment.
２ カセット搬入部 ３ 基板取出部 ５ 基板処理部 ７ 基板収納部 ８ カセット搬出部 ９ 基板移載搬送機構 ５２ 薬液処理部 ５２ａ 循環機構 ５４ 水洗処理部 ５６ 多機能処理部 ５６ａ 循環機構 ５８ 乾燥部 Ｃ カセット ＴＲ 搬送ロボット ＬＨ1、ＬＨ2 リフタヘッド 2 cassette loading section 3 substrate unloading section 5 substrate processing section 7 substrate storing section 8 cassette unloading section 9 substrate transfer / transport mechanism 52 chemical solution processing section 52a circulation mechanism 54 water washing processing section 56 multi-function processing section 56a circulation mechanism 58 drying section C cassette TR transport robot LH1, LH2 lifter head
Claims (6)
１つの薬液専用処理槽と、 前記薬液専用処理槽にて薬液処理を施された基板に薬液
処理、水洗処理及び乾燥処理のうちの少なくとも２つを
施す多機能処理槽とを備えることを特徴とする基板処理
装置。1. At least one chemical treatment bath for subjecting a substrate to a predetermined chemical treatment, and at least two of a chemical treatment, a water washing treatment and a drying treatment for the substrate treated in the chemical treatment bath. A substrate processing apparatus, comprising:
し、導き出された薬液を再び前記薬液専用処理槽に導入
する薬液の循環機構と、 前記循環機構または、前記薬液専用処理槽に設けられ、
薬液の温度調節を行う温度調節手段と、を備えることを
特徴とする請求項１記載の基板処理装置。2. A chemical liquid circulation mechanism that introduces the chemical liquid from the chemical liquid dedicated treatment tank and introduces the derived chemical liquid into the chemical liquid dedicated treatment tank again; and the circulation mechanism or the chemical liquid dedicated treatment tank,
The substrate processing apparatus according to claim 1, further comprising a temperature adjusting unit that adjusts the temperature of the chemical liquid.
薬液処理を行うことを特徴とする請求項２記載の基板処
理装置。3. The substrate processing apparatus according to claim 2, wherein the processing bath dedicated to the chemical liquid performs chemical liquid processing with a high temperature acid liquid.
水との混合溶液または燐酸または硫酸または硝酸のうち
いずれかの薬液による薬液処理を行うことを特徴とする
請求項２記載の基板処理装置。4. The substrate processing according to claim 2, wherein the chemical-solution exclusive-use processing tank performs chemical solution processing with a mixed solution of sulfuric acid and hydrogen peroxide solution or one of phosphoric acid, sulfuric acid, and nitric acid. apparatus.
ッ酸による薬液処理を行うことを特徴とする請求項２記
載の基板処理装置。5. The substrate processing apparatus according to claim 2, wherein the chemical treatment liquid processing bath performs chemical treatment with buffered hydrofluoric acid.
施すことを特徴とする請求項１記載の基板処理装置。6. The substrate processing apparatus according to claim 1, wherein the multifunctional processing bath performs a drying process on the substrate.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7159242A JPH095691A (en) | 1995-06-26 | 1995-06-26 | Wafer treating device |
| US08/659,687 US5976198A (en) | 1995-06-09 | 1996-06-06 | Substrate transfer and bath apparatus |
| KR1019960020445A KR100255424B1 (en) | 1995-06-09 | 1996-06-08 | Substrate treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7159242A JPH095691A (en) | 1995-06-26 | 1995-06-26 | Wafer treating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH095691A true JPH095691A (en) | 1997-01-10 |
Family
ID=15689459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7159242A Pending JPH095691A (en) | 1995-06-09 | 1995-06-26 | Wafer treating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH095691A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191511A (en) * | 2003-12-02 | 2005-07-14 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment and substrate processing method |
| JP2006216891A (en) * | 2005-02-07 | 2006-08-17 | Tokyo Univ Of Agriculture & Technology | Manufacturing method of thin-film element structure, and functional base substance therefor |
| JP2016200821A (en) * | 2016-05-27 | 2016-12-01 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate treatment device |
-
1995
- 1995-06-26 JP JP7159242A patent/JPH095691A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191511A (en) * | 2003-12-02 | 2005-07-14 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment and substrate processing method |
| JP2006216891A (en) * | 2005-02-07 | 2006-08-17 | Tokyo Univ Of Agriculture & Technology | Manufacturing method of thin-film element structure, and functional base substance therefor |
| JP2016200821A (en) * | 2016-05-27 | 2016-12-01 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate treatment device |
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