JPH09330798A - Plasma generator - Google Patents
Plasma generatorInfo
- Publication number
- JPH09330798A JPH09330798A JP8149619A JP14961996A JPH09330798A JP H09330798 A JPH09330798 A JP H09330798A JP 8149619 A JP8149619 A JP 8149619A JP 14961996 A JP14961996 A JP 14961996A JP H09330798 A JPH09330798 A JP H09330798A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- electrode
- cover
- ground potential
- kept
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プラズマ発生装置
に係る。より詳細には、プラズマ中に生じる異常放電の
発生を抑制できるプラズマ発生装置に関する。TECHNICAL FIELD The present invention relates to a plasma generator. More specifically, the present invention relates to a plasma generator capable of suppressing the occurrence of abnormal discharge that occurs in plasma.
【０００２】[0002]
【従来の技術】高周波放電を応用した成膜・加工プロセ
スでは、発生させたプラズマに対向して、被処理体（例
えば、成膜基板若しくは被加工品）を配置する。このた
め、被処理体自身あるいは被処理体を保持する支持体に
より、プラズマの安定性が失われる。その結果、しばし
ば異常放電が発生する。この異常放電は、成膜若しくは
加工した品物に欠陥を発生させ、製品の品質と歩留まり
を悪化させる原因となっている。2. Description of the Related Art In a film forming / processing process to which a high frequency discharge is applied, an object to be processed (for example, a film forming substrate or an object to be processed) is arranged facing a generated plasma. Therefore, the stability of plasma is lost by the object to be processed itself or the support that holds the object to be processed. As a result, abnormal discharge often occurs. This abnormal discharge causes defects in the film-formed or processed product, which causes deterioration of product quality and yield.
【０００３】従来から、このような高周波放電を用いた
プラズマ発生装置（図２）では、プラズマ源の一つとし
て、高周波電力を印加する陰極２２、接地電位に保たれ
た陽極２３、及び接地電位に保たれた金属製の覆い２４
から構成されるものがある。このようなプラズマ源は、
例えばスパッタ法に応用されている。その際この覆い２
３は、陰極・陽極間で発生したプラズマを効率良く閉じ
込め、又は引き出すのに有効である。しかしながら、強
制的に接地電位に保たれた覆いは、被処理体により安定
性が失われたプラズマの安定化には寄与できない。Conventionally, in such a plasma generator using high frequency discharge (FIG. 2), as one of plasma sources, a cathode 22 for applying high frequency power, an anode 23 kept at a ground potential, and a ground potential are used. Metal cover 24 kept in place
Some consist of Such a plasma source
For example, it is applied to the sputtering method. In that case, this cover 2
3 is effective in efficiently confining or extracting the plasma generated between the cathode and the anode. However, the cover that is forcibly kept at the ground potential cannot contribute to the stabilization of plasma whose stability has been lost by the object to be processed.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、上述したプ
ラズマ中に生じる異常放電の発生を抑制できるプラズマ
発生装置を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a plasma generator capable of suppressing the above-mentioned abnormal discharge generated in plasma.
【０００５】[0005]
【課題を解決するための手段】本発明のプラズマ発生装
置は、高周波電力を印加する陰極と、接地電位に保たれ
た陽極と、前記陰極及び前記陽極を取り囲むように配置
された金属製の覆いを有し、前記覆いが、インピーダン
スを介して接地電位に接続してある。そのため、金属製
の覆いは一旦接地電位から絶縁した上で、インピーダン
スを介して直流電位を接地電位とすることで、陰極や陽
極から発生した高周波成分が失われることがない。その
結果、安定な高周波プラズマを発生し、かつ維持するこ
とが可能となる。したがって、プラズマ中に生じる異常
放電の発生を抑制できるプラズマ発生装置がえられる。In the plasma generator of the present invention, a cathode for applying high-frequency power, an anode kept at a ground potential, and a metallic cover arranged so as to surround the cathode and the anode. And the cover is connected via an impedance to ground potential. Therefore, by once insulating the metallic cover from the ground potential and then setting the direct-current potential to the ground potential via the impedance, the high frequency component generated from the cathode or the anode is not lost. As a result, stable high frequency plasma can be generated and maintained. Therefore, it is possible to obtain a plasma generator that can suppress the occurrence of abnormal discharge that occurs in plasma.
【０００６】[0006]
【発明の実施の形態】本発明に係るプラズマ発生装置と
しては、例えば図１に示すものが挙げられる。BEST MODE FOR CARRYING OUT THE INVENTION As a plasma generator according to the present invention, for example, the one shown in FIG. 1 can be cited.
【０００７】図１に示したプラズマ発生装置は、高周波
電力を印加する陰極２、接地電位に保たれた陽極３、及
びインピーダンス１０を介して直流電位を接地電位に保
たれた金属製の覆い４から構成されたプラズマ源を有す
る。陰極２及び覆い４は、絶縁物５を介して装置外壁１
と接しており、陰極２には、整合回路６を介して高周波
電源７を接続した。一方、陽極３は、接地電位にあるプ
ラズマ発生装置の外壁１と直接接触させた。The plasma generator shown in FIG. 1 has a cathode 2 to which high-frequency power is applied, an anode 3 kept at ground potential, and a metallic cover 4 whose DC potential is kept at ground potential via an impedance 10. A plasma source composed of The cathode 2 and the cover 4 are connected to each other via an insulator 5 and the device outer wall 1
And a high frequency power supply 7 was connected to the cathode 2 via a matching circuit 6. On the other hand, the anode 3 was brought into direct contact with the outer wall 1 of the plasma generator at ground potential.
【０００８】被処理体８は、陰極２と対向した位置に設
けられ、覆い４が被処理体８と陰極２との間の空間に位
置するようにした。陰極２の位置から見て、被処理体８
が覆い４を通して臨めるようにする場合は、覆い４の形
状を網目状あるいは簾状などにすればよい。The object 8 to be processed is provided at a position facing the cathode 2, and the cover 4 is positioned in the space between the object 8 to be processed and the cathode 2. The object to be processed 8 viewed from the position of the cathode 2
When the cover 4 is to be exposed through the cover 4, the cover 4 may have a mesh shape or a blind shape.
【０００９】装置外壁１には、発生したプラズマを観測
するため、覗き窓９を設けてある。A peep window 9 is provided on the outer wall 1 of the apparatus for observing the generated plasma.
【００１０】また、図１に示したプラズマ発生装置は、
不図示のガス供給手段、不図示のガス圧調整手段、及び
不図示の真空排気手段を有する。Further, the plasma generator shown in FIG.
It has a gas supply means (not shown), a gas pressure adjusting means (not shown), and a vacuum exhaust means (not shown).
【００１１】[0011]
【実施例】以下に実施例をあげて本発明をより詳細に説
明するが、本発明がこれら実施例に限定されることはな
い。The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.
【００１２】（実施例１）本例では、本発明に係る図１
に示したプラズマ発生装置のプラズマ源を用いプラズマ
を発生させ、装置外壁１に設けた覗き窓９を通して、１
時間あたり異常放電が発生する回数を観測した。(Embodiment 1) In this embodiment, FIG.
Plasma is generated using the plasma source of the plasma generator shown in FIG.
The number of occurrences of abnormal discharge per hour was observed.
【００１３】本例のプラズマ源は、高周波電力を印加す
る陰極２、接地電位に保たれた陽極３、及びインピーダ
ンス１０を介して直流電位を接地電位に保たれた金属製
の覆い４から構成した。陰極２及び覆い４は、絶縁物５
を介して装置外壁１と接している。一方、陽極３は、接
地電位にあるプラズマ発生装置の外壁１と直接接触させ
た。The plasma source of this example comprises a cathode 2 for applying high-frequency power, an anode 3 kept at ground potential, and a metallic cover 4 kept at DC potential at ground potential via an impedance 10. . The cathode 2 and the cover 4 are made of an insulator 5
Is in contact with the outer wall 1 of the device. On the other hand, the anode 3 was brought into direct contact with the outer wall 1 of the plasma generator at ground potential.
【００１４】プラズマの発生条件は、表１に示した。The plasma generation conditions are shown in Table 1.
【００１５】[0015]
【表１】 その結果、本発明に係る装置では、異常放電が発生する
回数は、３回以下であることが分かった。[Table 1] As a result, in the device according to the present invention, it was found that the number of times abnormal discharge occurred was 3 times or less.
【００１６】（比較例１）本例では、図２に示した従来
のプラズマ発生装置を用いプラズマを発生させ、装置外
壁に設けた覗き窓を通して、１時間あたり異常放電が発
生する回数を観測した。すなわち、金属製の覆い２４
を、接地電位に直接接続した点が実施例１と異なる。Comparative Example 1 In this example, the conventional plasma generator shown in FIG. 2 was used to generate plasma, and the number of abnormal discharges per hour was observed through a viewing window provided on the outer wall of the device. . That is, the metal cover 24
Is different from the first embodiment in that is directly connected to the ground potential.
【００１７】他の点は、実施例と同様にした。Other points were the same as in the embodiment.
【００１８】その結果、従来の装置では、異常放電が発
生する回数は、２０回以上であることが分かった。As a result, it was found that in the conventional device, the number of abnormal discharges was 20 or more.
【００１９】したがって、本発明に係るプラズマ発生装
置は、異常放電の発生を著しく抑制できることが明らか
となった。また、この作用はプラズマの発生条件に依存
せず認められた。さらに、本発明に係るプラズマ発生装
置のプラズマ源を対向させて設け、その間を被処理体が
通過することにより、被処理体の両面を同時に処理した
場合でも、上記作用がえられることが確認された。Therefore, it has become clear that the plasma generator according to the present invention can remarkably suppress the occurrence of abnormal discharge. Moreover, this effect was observed regardless of the plasma generation conditions. Furthermore, it is confirmed that the above-mentioned action can be obtained even when both surfaces of the object to be processed are simultaneously processed by providing the plasma sources of the plasma generator according to the present invention so as to face each other and allowing the object to be processed to pass between them. It was
【００２０】[0020]
【発明の効果】以上説明したように、本発明に係るプラ
ズマ発生装置は、プラズマ中に生じる異常放電の発生を
抑制できる。したがって、安定した高周波プラズマを発
生・維持できるため、被処理体に依存せず、安定した成
膜・加工プロセスの構築が可能となる。As described above, the plasma generator according to the present invention can suppress the occurrence of abnormal discharge in plasma. Therefore, stable high-frequency plasma can be generated and maintained, and a stable film-forming / processing process can be constructed without depending on the object to be processed.
【図１】本発明に係るプラズマ発生装置の一例を示す模
式的な断面図である。FIG. 1 is a schematic sectional view showing an example of a plasma generator according to the present invention.
【図２】従来のプラズマ発生装置の一例を示す模式的な
断面図である。FIG. 2 is a schematic cross-sectional view showing an example of a conventional plasma generator.
１、２１ 装置外壁、 ２、２２ 高周波電力を印加する陰極、 ３、２３ 接地電位に保たれた陽極、 ４ インピーダンス１０を介して接地された金属製の覆
い、 ５、２５ 絶縁物、 ６、２６ 整合回路、 ７、２７ 高周波電源、 ８、２８ 被処理体、 ９、２９ 覗き窓、 ２４ 直接接地された金属製の覆い。1, 21 Outer wall of device, 2, 22 Cathode for applying high frequency power, 3, 23 Anode kept at ground potential, 4 Metal cover grounded via impedance 10, 5, 25 Insulator, 6, 26 Matching circuit, 7, 27 High frequency power source, 8, 28 Object to be processed, 9, 29 Viewing window, 24 Directly grounded metal cover.
Claims (1)
に保たれた陽極と、前記陰極及び前記陽極を取り囲むよ
うに配置された金属製の覆いを有し、前記覆いが、イン
ピーダンスを介して接地電位に接続してあることを特徴
とするプラズマ発生装置。1. A cathode for applying high-frequency power, an anode kept at a ground potential, and a metallic cover arranged so as to surround the cathode and the anode, and the cover is provided through an impedance. A plasma generator characterized by being connected to a ground potential.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8149619A JPH09330798A (en) | 1996-06-11 | 1996-06-11 | Plasma generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8149619A JPH09330798A (en) | 1996-06-11 | 1996-06-11 | Plasma generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09330798A true JPH09330798A (en) | 1997-12-22 |
Family
ID=15479182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8149619A Pending JPH09330798A (en) | 1996-06-11 | 1996-06-11 | Plasma generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09330798A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016213033A (en) * | 2015-05-07 | 2016-12-15 | 東京エレクトロン株式会社 | Wafer processing apparatus |
| WO2020017328A1 (en) * | 2018-07-17 | 2020-01-23 | 東京エレクトロン株式会社 | Plasma processing device and plasma processing method |
-
1996
- 1996-06-11 JP JP8149619A patent/JPH09330798A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016213033A (en) * | 2015-05-07 | 2016-12-15 | 東京エレクトロン株式会社 | Wafer processing apparatus |
| WO2020017328A1 (en) * | 2018-07-17 | 2020-01-23 | 東京エレクトロン株式会社 | Plasma processing device and plasma processing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3654108A (en) | Method for glow cleaning | |
| US5294320A (en) | Apparatus for cleaning a shield in a physical vapor deposition chamber | |
| JPH09330798A (en) | Plasma generator | |
| JP2000328248A (en) | Method for cleaning thin film forming apparatus and thin film forming apparatus | |
| JP2956412B2 (en) | How to clean the ion source | |
| KR20070070866A (en) | Plasma treatment apparatus and method for cleaning the same | |
| JP2628795B2 (en) | How to clean shields in physical vapor deposition chambers | |
| JPH06291064A (en) | Plasma treatment device | |
| JP3006029B2 (en) | Vacuum deposition equipment | |
| US3540989A (en) | Process for reducing secondary electron emission | |
| JP4902054B2 (en) | Sputtering equipment | |
| EP1039501A2 (en) | Apparatus and method for production of electronic devices | |
| JPS61264174A (en) | Dc bias sputtering method | |
| JP2548164B2 (en) | Dry etching method | |
| JPH0378954A (en) | Ion source | |
| JP3615919B2 (en) | Plasma CVD equipment | |
| JPS60189925A (en) | High frequency discharge reactor | |
| JPS5846639A (en) | Cleaning method for plasma processor and its plasma processor | |
| JPH04315797A (en) | Plasme processing device and method of cleaning plasma source thereof | |
| JP2003209057A (en) | Plasma treatment method and apparatus thereof | |
| JPS60220927A (en) | Manufacturing device for semiconductor | |
| JPH0688257A (en) | Plasma treating device | |
| JP2722861B2 (en) | Dry etching method and apparatus | |
| JPH0448073A (en) | Sputtering device | |
| JP2963227B2 (en) | Plasma processing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050207 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050223 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20050803 |