JPH09320758A - Mask for vacuum film formation - Google Patents
Mask for vacuum film formationInfo
- Publication number
- JPH09320758A JPH09320758A JP8139346A JP13934696A JPH09320758A JP H09320758 A JPH09320758 A JP H09320758A JP 8139346 A JP8139346 A JP 8139346A JP 13934696 A JP13934696 A JP 13934696A JP H09320758 A JPH09320758 A JP H09320758A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- substrate
- pattern
- vacuum film
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000005192 partition Methods 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 abstract description 3
- 238000005452 bending Methods 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 229910017911 MgIn Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 239000011491 glass wool Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- -1 diamine compound Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007666 vacuum forming Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、真空成膜用マス
クの開口部に係り、特に真空成膜用マスクの補強構造に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an opening of a vacuum film forming mask, and more particularly to a reinforcing structure for a vacuum film forming mask.
【０００２】[0002]
【従来の技術】真空蒸着法，スパッタ法，ＣＶＤ法等の
真空成膜法は、薄膜を形成する手段として今日広く用い
られている。薄膜を基板上に形成する際には、用途によ
り種々のパターンを形成する必要があり、その目的のた
めに、いくつかの方法がとられている。2. Description of the Related Art Vacuum film forming methods such as a vacuum vapor deposition method, a sputtering method and a CVD method are widely used today as means for forming a thin film. When forming a thin film on a substrate, it is necessary to form various patterns depending on the application, and several methods have been adopted for that purpose.
【０００３】最も簡便で広く用いられている方法は、金
属薄板等に開口部を形成した真空成膜用マスクを用いる
ものであり、真空成膜の際にはこれを基板に密着し、開
口部に相当した部分にのみ基板上に膜が付着するもので
ある。また特に高精細のパターンを得る方法としては、
フォトリソグラフィによるものがある。これは光反応性
のあるポリマーを基板上に塗布した後、光照射によりポ
リマーにパターンを潜像として形成させ、溶剤によりポ
リマーを選択的に除去してパターンを基板上に得るもの
である。真空成膜により薄膜を形成した後は、必要によ
り残留したポリマーを除去する。The simplest and most widely used method is to use a vacuum film forming mask in which an opening is formed on a thin metal plate or the like. When vacuum forming a film, the mask is adhered to a substrate to form the opening. The film adheres to the substrate only in the portion corresponding to. Moreover, as a method for obtaining a particularly high-definition pattern,
There is one by photolithography. In this method, a photoreactive polymer is applied on a substrate, and then a pattern is formed on the polymer as a latent image by light irradiation, and the polymer is selectively removed by a solvent to obtain the pattern on the substrate. After forming the thin film by vacuum film formation, the residual polymer is removed if necessary.
【０００４】有機発光素子は、発光に必要な駆動電圧が
低く、各種発光材料の適用により発光色の選択が可能で
あることから、近年その研究が活発化している（例えば
米国特許３，５３０，３２５号）。その中でも発光効率
を向上させる目的で、陽極／正孔注入層／発光層／陰極
からなる積層型の有機発光素子を用いて、１０Ｖ以下の
駆動電圧で１０００ｃｄ／ｍ2 以上の輝度が得られたと
いう報告（特開昭５７‐５１７８１号公報）がなされて
以来、研究に拍車がかけられた。The organic light-emitting device has a low driving voltage required for light emission, and the emission color can be selected by applying various light-emitting materials. Therefore, the research has been activated recently (eg, US Pat. 325). Among them, for the purpose of improving the light emission efficiency, a laminated organic light emitting device including an anode / hole injection layer / light emitting layer / cathode was used, and a luminance of 1000 cd / m 2 or more was obtained at a driving voltage of 10 V or less. Since the report (Japanese Patent Laid-Open No. 57-51781) was made, research has been spurred.
【０００５】図６は一般的な有機発光素子を示す断面図
である。支持体である透明な基板１の上に、透明導電膜
からなる陽極２、有機化合物からなる正孔注入層３と発
光層４と電子注入層５、および金属からなる陰極６が形
成される。陰極６は発光層４からの光を反射して基板１
からの光の出射効率を高める機能も合わせ持つものであ
る。FIG. 6 is a sectional view showing a general organic light emitting device. An anode 2 made of a transparent conductive film, a hole injection layer 3 made of an organic compound, a light emitting layer 4, an electron injection layer 5 and a cathode 6 made of metal are formed on a transparent substrate 1 which is a support. The cathode 6 reflects the light from the light emitting layer 4 and the substrate 1
It also has a function of increasing the emission efficiency of light from the.
【０００６】図７は一般的な他の有機発光素子を示す断
面図である。発光層４に電子注入層５の機能を兼ね備え
させた構造も多く用いられている。FIG. 7 is a sectional view showing another general organic light emitting device. A structure in which the light emitting layer 4 also has the function of the electron injection layer 5 is often used.
【０００７】[0007]
【発明が解決しようとする課題】この有機発光素子を用
いて表示素子を形成する場合、陽極２としての透明導電
膜と金属である陰極６をパターニングすることにより画
素を形成するが、特にギャップ幅0.1mm 程度以下の画素
を形成する場合は、以下の理由により金属の陰極６のパ
ターニングにおいてはフォトリソグラフィによることが
できない。即ちフォトリソグラフィにおいては、ポリマ
ーを選択的に除去する際に溶剤を用いるため基板上に既
に有機薄膜が形成され、その上にさらに陰極６のパター
ンを形成しようとする場合には、溶剤により有機薄膜が
損傷を受ける。When a display element is formed by using this organic light emitting element, a pixel is formed by patterning a transparent conductive film as the anode 2 and a cathode 6 which is a metal. When forming pixels of about 0.1 mm or less, photolithography cannot be used for patterning the metal cathode 6 for the following reasons. That is, in photolithography, an organic thin film is already formed on the substrate because a solvent is used when selectively removing the polymer, and when a pattern of the cathode 6 is to be formed on the organic thin film, the organic thin film is formed by the solvent. Is damaged.
【０００８】一方マスクを使用する場合、開口部のアス
ペクト比の観点から構成する薄板の厚さは、画素寸法程
度に制限され、例えばギャップ幅0.1mm 程度以下の画素
では、マスクの厚さも0.1mm 程度に制限され、取扱によ
る破損を生じやすく、寿命も短いという欠点があった。
図５は従来の電極パターンを示す平面図である。ここで
６は陰極、１３は電極パターンのピッチ、１４は電極ギ
ャップ幅、１５は電極パターン長さである。この電極パ
ターンを構成するためのマスクは、例えばピッチ 0.33m
m で幅0.05mm（電極ギャップ幅に相当）以下、厚さ0.1m
m で長さ50〜100mm の開口部を数百本並べることになり
マスク全体がたわむと開口部同志の干渉により開口部間
の隔壁部が容易に破損する。また成膜後のマスク取り外
しの際には、膜の付着力に負けて隔壁部が破損する場合
もある。また特に大面積のマスクにおいては、マスク開
口部加工による歪み等の影響からマスクの平坦性を保持
しにくく、基板との密着性にも問題が生じた。このため
パターンの精細度はおよそ0.10mm、パターン長さは実用
上20mm程度が限界であった。On the other hand, when a mask is used, the thickness of the thin plate formed from the viewpoint of the aspect ratio of the opening is limited to about the pixel size. For example, for a pixel with a gap width of about 0.1 mm or less, the mask thickness is also 0.1 mm. It has the drawbacks that it is limited to a certain degree, is easily damaged by handling, and has a short life.
FIG. 5 is a plan view showing a conventional electrode pattern. Here, 6 is a cathode, 13 is an electrode pattern pitch, 14 is an electrode gap width, and 15 is an electrode pattern length. The mask for forming this electrode pattern has a pitch of 0.33 m, for example.
Width is less than 0.05mm (equivalent to electrode gap width) and thickness is 0.1m
Several hundred openings with a length of 50 to 100 mm are arranged in m, and when the entire mask bends, the partition walls between the openings are easily damaged due to interference between the openings. Further, when the mask is removed after the film formation, the partition wall portion may be damaged due to the adhesive force of the film. Further, particularly in the case of a large-area mask, it is difficult to maintain the flatness of the mask due to the influence of distortion or the like due to the processing of the mask opening, and there is a problem in the adhesion to the substrate. For this reason, the fineness of the pattern was about 0.10 mm, and the pattern length was practically limited to about 20 mm.
【０００９】この発明は上述の点に鑑みてなされその目
的は、マスク開口部に補強構造を設けることにより開口
部間の隔壁部の破損を防止し、高精細で且つ大面積のパ
ターニングが可能な真空成膜用マスクを提供することに
ある。The present invention has been made in view of the above points, and an object thereof is to prevent damage to the partition between the openings by providing a reinforcing structure in the mask openings, and to perform high-definition and large-area patterning. It is to provide a mask for vacuum film formation.
【００１０】[0010]
【課題を解決するための手段】上述の目的はこの発明に
よれは、開口部パターンが形成され、真空成膜時に基板
に密着して開口部のパターンに従い薄膜を形成する真空
成膜用マスクにおいて、基板に接触するマスク平面に対
向するマスク面において開口部間の隔壁部を介して複数
の開口部に一体に架設される桁構造を備えるとすること
により達成される。According to the present invention, there is provided a vacuum film-forming mask in which an opening pattern is formed and which is adhered to a substrate during vacuum film formation to form a thin film in accordance with the opening pattern. It is achieved by providing a girder structure which is integrally installed in a plurality of openings through a partition wall between the openings on the mask surface facing the mask plane that contacts the substrate.
【００１１】上述の発明において複数の開口部を囲む周
辺に補強枠を備えることが有効である。基板に接触する
マスク平面に対向するマスク面に桁構造が設けられた桁
構造はマスクの密着を阻害しない。開口部間の隔壁部を
介して複数の開口部に一体に架設される桁構造を備える
と隔壁部が桁構造により支持されて隔壁部が機械的に補
強されマスク撓み時の隔壁部破損を防止する。In the above invention, it is effective to provide a reinforcing frame around the plurality of openings. The girder structure in which the girder structure is provided on the mask surface facing the mask plane that contacts the substrate does not hinder the adhesion of the mask. If a girder structure is installed integrally with a plurality of openings via the partition wall between the openings, the partition wall is supported by the girder structure and the partition wall is mechanically reinforced to prevent damage to the partition wall when the mask is bent. To do.
【００１２】桁構造の直下の薄膜の成長は他の部分より
少ないが蒸着物質の回り込みや蒸着源から基板への到達
角度の分布等により、薄膜の成長差による凹凸の影響は
少なくできる。金属電極の場合は電気抵抗の観点から一
定厚さ以上の膜厚が確保されていれば、膜厚のばらつき
は実用特性に影響を与えない。また補強枠があるとマス
クの撓みが防止される。Although the growth of the thin film directly below the girder structure is smaller than that of other portions, the influence of unevenness due to the growth difference of the thin film can be reduced by the wraparound of the deposition material and the distribution of the arrival angle from the deposition source to the substrate. In the case of a metal electrode, if a film thickness of a certain thickness or more is secured from the viewpoint of electric resistance, the variation in film thickness does not affect practical characteristics. The presence of the reinforcing frame prevents the mask from bending.
【００１３】[0013]
【発明の実施の形態】開口部が規則正しく並び、開口部
のアレイを形成する場合は、円や直線等の対称性の良い
桁構造が開口部に配置される。開口部が規則正しい配列
をしない場合の桁構造は非対称となる。桁構造は一体構
造であり、この一体構造が隔壁部に架設されたときに隔
壁部を補強する。BEST MODE FOR CARRYING OUT THE INVENTION When the openings are regularly arranged to form an array of openings, a girder structure having good symmetry such as a circle or a straight line is arranged in the openings. The girder structure is asymmetric when the openings are not arranged regularly. The girder structure is an integral structure, and when this integral structure is erected on the partition part, the partition part is reinforced.
【００１４】[0014]
実施例１ 図１はこの発明の実施例に係る真空成膜用マスクを示
し、（ａ）は平面図、（ｂ）は側面図である。金属マス
クの有効成膜面は横幅100mm,縦幅 75mm 、開口部１２の
パターンはピッチ１３が 0.33mm 、幅0.05mm、長さ１５
が50mmである。パターン部９は厚さ0.05mmのNiシートで
あり、これに厚さ 1mm, 幅 5mmのNi板で補強枠１０を構
成して全体の補強構造とした。さらにパターン部９を補
強するために、0.1mm φのNi細線１１をピッチ10mmで開
口部１２のパターンの上に架設配置して桁構造とした。
パターン部９と補強枠１０およびNi細線は低収縮率の接
着剤により接着した。Embodiment 1 FIG. 1 shows a vacuum film forming mask according to an embodiment of the present invention, (a) is a plan view and (b) is a side view. The effective film forming surface of the metal mask is 100 mm in width and 75 mm in width, and the pattern of the openings 12 has a pitch 13 of 0.33 mm, a width of 0.05 mm, and a length of 15.
Is 50 mm. The pattern portion 9 is a Ni sheet having a thickness of 0.05 mm, and the reinforcing frame 10 is constituted by a Ni plate having a thickness of 1 mm and a width of 5 mm to form the entire reinforcing structure. Further, in order to reinforce the pattern portion 9, a 0.1 mmφ Ni fine wire 11 was laid over the pattern of the openings 12 at a pitch of 10 mm to form a girder structure.
The pattern portion 9, the reinforcing frame 10 and the Ni thin wire were bonded with an adhesive having a low shrinkage ratio.
【００１５】素子の試作は、横幅150mm 、縦幅100mm 、
厚さ0.5mm の平面ガラス基板上に、横幅100mm 、縦幅 7
5mm の面積に画面を構成するために、先ずＩＴＯをスパ
ッタ法により膜厚100nm 形成して陽極とした。この際の
パターニングはフォトリソグラフィを用いた。ＩＴＯの
電気伝導率を改善するための熱処理を行なった後、画面
面積全体に有機層の正孔注入層３、発光層４を真空蒸着
により形成した。各層の膜厚は、それぞれ50, 70nmとし
た。正孔注入層３、発光層４は、それぞれ以下に示すジ
アミン化合物とアルミキレート化合物を用いた。The device is manufactured as a prototype with a width of 150 mm, a height of 100 mm,
7 mm wide and 7 mm wide on a 0.5 mm thick flat glass substrate.
In order to form a screen with an area of 5 mm, ITO was first formed into a film having a thickness of 100 nm by a sputtering method to form an anode. Photolithography was used for patterning at this time. After the heat treatment for improving the electric conductivity of ITO, the hole injection layer 3 and the light emitting layer 4 which are organic layers were formed on the entire screen area by vacuum evaporation. The film thickness of each layer was 50 and 70 nm, respectively. For the hole injection layer 3 and the light emitting layer 4, the following diamine compound and aluminum chelate compound were used.
【００１６】[0016]
【化１】 Embedded image
【００１７】[0017]
【化２】 Embedded image
【００１８】次に前記のマスクを、有機化合物を成膜し
た基板と密着させた後、陰極６の金属（ＭｇＩｎ合金
（Ｉｎ含有率５体積％））を共蒸着により形成した。膜
厚は200nm としたが、Ni細線１１直下では約 70nm であ
った。図２はこの発明の実施例に係る真空成膜用マスク
と基板の位置関係を示す配置図である。Next, the mask was brought into close contact with the substrate on which the organic compound was formed, and then the metal of the cathode 6 (MgIn alloy (In content 5% by volume)) was formed by co-evaporation. Although the film thickness was 200 nm, it was about 70 nm just below the Ni thin wire 11. FIG. 2 is a layout view showing the positional relationship between the vacuum film forming mask and the substrate according to the embodiment of the present invention.
【００１９】図３はこの発明の実施例に係る有機薄膜素
子につき陰極の膜厚分布を示す線図である。得られた膜
厚分布は本使用目的では全く問題ない。続いてマスクを
取り外したあと、封止層７としてフッ素樹脂をガラスウ
ールに含浸させて塗布形成した。マスクは損傷を受けて
おらず、再使用可能であった。 実施例２ 真空成膜用マスクの有効成膜面は横幅200mm 、縦幅150m
m 、開口部パターンはピッチ 0.22mm 、幅0.03mm、長さ
100mm である。パターン部９は厚さ0.05mmのNiシートで
あり、これに厚さ 1mm、幅 5mmのNi板で補強枠を構成し
た。さらに開口部１２を補強するために、0.1mm φのNi
細線をピッチ10mmで開口部パターンの上に架設配置し
た。パターン部９と補強枠１０およびNi細線１１は低収
縮率の接着剤により接着した。FIG. 3 is a diagram showing the film thickness distribution of the cathode in the organic thin film element according to the embodiment of the present invention. The obtained film thickness distribution has no problem for this purpose of use. Subsequently, the mask was removed, and then glass wool was impregnated with fluororesin as the sealing layer 7 to form a coating. The mask was undamaged and reusable. Example 2 The effective film-forming surface of the vacuum film-forming mask has a width of 200 mm and a height of 150 m.
m, opening pattern pitch 0.22mm, width 0.03mm, length
100 mm. The pattern portion 9 is a Ni sheet having a thickness of 0.05 mm, and a reinforcing frame is formed from a Ni sheet having a thickness of 1 mm and a width of 5 mm. Furthermore, in order to reinforce the opening 12, 0.1 mmφ Ni
The thin wires were placed on the opening pattern with a pitch of 10 mm. The pattern portion 9, the reinforcing frame 10 and the Ni thin wire 11 were bonded with an adhesive having a low shrinkage ratio.
【００２０】素子の試作は、横幅300mm 、縦幅150mm 、
厚さ0.5mm の平面ガラス基板上に、横幅200mm 、縦幅15
0mm の面積に画面を構成するために、実施例１と同様の
方法により、ＩＴＯ（陽極：膜厚100nm ）と有機層（正
孔注入層３：膜厚50nm、発光層４：膜厚70nm）を形成し
た。次に前記のマスクを有機層を成膜した基板と密着さ
せた後、陰極６の金属（ＭｇＩｎ合金（Ｉｎ含有率５体
積％））を共蒸着により形成し、そののち導電層と保護
層を兼ねてAl合金をスパッタ法により形成した。各層の
膜厚は、それぞれ200nm 、100nm としたが、Ni細線１１
直下ではそれぞれ 70nm, 50nm であった。The prototype of the device is 300 mm wide, 150 mm long,
On a flat glass substrate 0.5 mm thick, width 200 mm, height 15
In order to form a screen with an area of 0 mm, ITO (anode: film thickness 100 nm) and organic layer (hole injection layer 3: film thickness 50 nm, light emitting layer 4: film thickness 70 nm) were formed by the same method as in Example 1. Was formed. Next, the mask is brought into close contact with the substrate on which the organic layer is formed, and then the metal of the cathode 6 (MgIn alloy (In content 5% by volume)) is formed by co-evaporation, and then the conductive layer and the protective layer are formed. Al alloy was also formed by the sputtering method. The film thickness of each layer was 200 nm and 100 nm, respectively.
Immediately below it were 70 nm and 50 nm, respectively.
【００２１】図４はこの発明の異なる実施例に係る有機
薄膜素子につき陰極の膜厚分布１７と導電層兼保護層１
８の膜厚分布を示す線図である。得られた膜厚分布は本
使用目的では全く問題ない。続いてマスクを取り外した
あと、封止層７としてフッ素樹脂をガラスウールに含浸
させて塗布形成した。 マスクは損傷を受けておらず再
使用可能であった。FIG. 4 shows a cathode film thickness distribution 17 and a conductive layer / protective layer 1 for an organic thin film element according to another embodiment of the present invention.
8 is a diagram showing a film thickness distribution of No. 8; The obtained film thickness distribution has no problem for this purpose of use. Subsequently, the mask was removed, and then glass wool was impregnated with fluororesin as the sealing layer 7 to form a coating. The mask was undamaged and reusable.
【００２２】[0022]
【発明の効果】この発明によれば真空成膜用マスクが基
板に接触するマスク平面に対向するマスク面において開
口部間の隔壁部を介して複数の開口部に一体に架設され
る桁構造を備えるので、隔壁部が桁構造により機械的に
保護され隔壁部の破損がなくなって高精細で且つ大面積
のパターニングが可能な真空成膜用マスクが得られる。According to the present invention, there is provided a girder structure in which a vacuum film forming mask is integrally erected in a plurality of openings through partition walls between the openings on a mask surface facing a mask plane in contact with a substrate. Since the barrier ribs are mechanically protected by the girder structure and the barrier ribs are not damaged, it is possible to obtain a vacuum film formation mask capable of high-definition and large-area patterning.
【図１】この発明の実施例に係る真空成膜用マスクを示
し、（ａ）は平面図、（ｂ）は側面図FIG. 1 shows a vacuum film forming mask according to an embodiment of the present invention, in which (a) is a plan view and (b) is a side view.
【図２】この発明の実施例に係る真空成膜用マスクと基
板の位置関係を示す配置図FIG. 2 is a layout diagram showing a positional relationship between a vacuum film forming mask and a substrate according to an embodiment of the present invention.
【図３】この発明の実施例に係る有機薄膜素子につき陰
極の膜厚分布を示す線図FIG. 3 is a diagram showing a film thickness distribution of a cathode in an organic thin film element according to an example of the present invention.
【図４】この発明の異なる実施例に係る有機薄膜素子に
つき陰極の膜厚分布と導電層兼保護層の膜厚分布を示す
線図FIG. 4 is a diagram showing a film thickness distribution of a cathode and a film thickness distribution of a conductive layer / protective layer in organic thin film elements according to different embodiments of the present invention.
【図５】従来の電極パターンを示す平面図FIG. 5 is a plan view showing a conventional electrode pattern.
【図６】一般的な有機発光素子を示す断面図FIG. 6 is a sectional view showing a general organic light emitting device.
【図７】一般的な他の有機発光素子を示す断面図FIG. 7 is a cross-sectional view showing another general organic light emitting device.
１ 基板 ２ 陽極 ３ 正孔注入層 ４ 発光層 ５ 電子注入層 ６ 陰極 ７ 封止層 ８ 電源 ９ パターン部 10 補強枠 11 桁構造 12 開口部 13 電極パターンピッチ 14 電極ギャップパターン幅 15 電極パターン長さ 16 桁構造の直下の位置 17 MgIn合金の膜厚分布 18 Al合金の膜厚分布 1 Substrate 2 Anode 3 Hole Injecting Layer 4 Light Emitting Layer 5 Electron Injecting Layer 6 Cathode 7 Sealing Layer 8 Power Supply 9 Pattern Part 10 Reinforcing Frame 11 Digit Structure 12 Opening 13 Electrode Pitch 14 Electrode Gap Pattern Width 15 Electrode Pattern Length Position just below 16-digit structure 17 Thickness distribution of MgIn alloy 18 Thickness distribution of Al alloy
Claims (2)
基板に密着して開口部のパターンに従い薄膜を形成する
真空成膜用マスクにおいて、基板に接触するマスク平面
に対向するマスク面において開口部間の隔壁部を介して
複数の開口部に一体に架設される桁構造を備えることを
特徴とする真空成膜用マスク。1. A vacuum film forming mask in which an opening pattern is formed and which adheres to a substrate during vacuum film formation to form a thin film in accordance with the pattern of the opening, and an opening is formed in a mask surface facing a mask plane in contact with the substrate. A vacuum film forming mask comprising a girder structure which is integrally installed in a plurality of openings via partition walls between the portions.
ことを特徴とする請求項１に記載の真空成膜用マスク。2. The vacuum film forming mask according to claim 1, further comprising a reinforcing frame around a periphery of the plurality of openings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13934696A JP3303667B2 (en) | 1996-06-03 | 1996-06-03 | Vacuum deposition mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13934696A JP3303667B2 (en) | 1996-06-03 | 1996-06-03 | Vacuum deposition mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09320758A true JPH09320758A (en) | 1997-12-12 |
| JP3303667B2 JP3303667B2 (en) | 2002-07-22 |
Family
ID=15243197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13934696A Expired - Fee Related JP3303667B2 (en) | 1996-06-03 | 1996-06-03 | Vacuum deposition mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3303667B2 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040042179A (en) * | 2002-11-13 | 2004-05-20 | 주식회사 엘리아테크 | Improved stripe type shadow mask with rib |
| KR20040042160A (en) * | 2002-11-13 | 2004-05-20 | 주식회사 엘리아테크 | The method of maintenance for shadow mask in OELD |
| KR100469252B1 (en) * | 2002-04-12 | 2005-02-02 | 엘지전자 주식회사 | Shadow Mask and Full Color Organic Electroluminescence Display Device Using the same |
| US6878209B2 (en) * | 1999-06-15 | 2005-04-12 | Toray Industries, Inc. | Organic electroluminescent device |
| JP2007035439A (en) * | 2005-07-27 | 2007-02-08 | Seiko Epson Corp | Mask, manufacturing method of organic el element and organic el printer |
| JP2007186740A (en) * | 2006-01-11 | 2007-07-26 | Seiko Epson Corp | Mask, film deposition method, light emitting device, and electronic equipment |
| KR100903624B1 (en) * | 2007-11-23 | 2009-06-18 | 삼성모바일디스플레이주식회사 | Mask assembly for thin film vapor deposition of flat panel display |
| JP2011222840A (en) * | 2010-04-13 | 2011-11-04 | Disco Abrasive Syst Ltd | Cord-shaped disc and manufacturing method for cord-shaped disc |
| US8343278B2 (en) | 2009-02-05 | 2013-01-01 | Samsung Display Co., Ltd | Mask assembly and deposition and apparatus for a flat panel display using the same |
| WO2014010284A1 (en) * | 2012-07-09 | 2014-01-16 | シャープ株式会社 | Mask unit and deposition device |
| WO2016009857A1 (en) * | 2014-07-14 | 2016-01-21 | 株式会社ブイ・テクノロジー | Film forming method and film forming apparatus |
-
1996
- 1996-06-03 JP JP13934696A patent/JP3303667B2/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6878209B2 (en) * | 1999-06-15 | 2005-04-12 | Toray Industries, Inc. | Organic electroluminescent device |
| KR100469252B1 (en) * | 2002-04-12 | 2005-02-02 | 엘지전자 주식회사 | Shadow Mask and Full Color Organic Electroluminescence Display Device Using the same |
| KR20040042179A (en) * | 2002-11-13 | 2004-05-20 | 주식회사 엘리아테크 | Improved stripe type shadow mask with rib |
| KR20040042160A (en) * | 2002-11-13 | 2004-05-20 | 주식회사 엘리아테크 | The method of maintenance for shadow mask in OELD |
| JP2007035439A (en) * | 2005-07-27 | 2007-02-08 | Seiko Epson Corp | Mask, manufacturing method of organic el element and organic el printer |
| JP2007186740A (en) * | 2006-01-11 | 2007-07-26 | Seiko Epson Corp | Mask, film deposition method, light emitting device, and electronic equipment |
| KR100903624B1 (en) * | 2007-11-23 | 2009-06-18 | 삼성모바일디스플레이주식회사 | Mask assembly for thin film vapor deposition of flat panel display |
| US8343278B2 (en) | 2009-02-05 | 2013-01-01 | Samsung Display Co., Ltd | Mask assembly and deposition and apparatus for a flat panel display using the same |
| JP2011222840A (en) * | 2010-04-13 | 2011-11-04 | Disco Abrasive Syst Ltd | Cord-shaped disc and manufacturing method for cord-shaped disc |
| WO2014010284A1 (en) * | 2012-07-09 | 2014-01-16 | シャープ株式会社 | Mask unit and deposition device |
| WO2016009857A1 (en) * | 2014-07-14 | 2016-01-21 | 株式会社ブイ・テクノロジー | Film forming method and film forming apparatus |
| JP2016019937A (en) * | 2014-07-14 | 2016-02-04 | 株式会社ブイ・テクノロジー | Film formation method and film formation apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3303667B2 (en) | 2002-07-22 |
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