JPH09302462A - Sputtering target for forming ferroelectric film, and its manufacture - Google Patents
Sputtering target for forming ferroelectric film, and its manufactureInfo
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- JPH09302462A JPH09302462A JP8114764A JP11476496A JPH09302462A JP H09302462 A JPH09302462 A JP H09302462A JP 8114764 A JP8114764 A JP 8114764A JP 11476496 A JP11476496 A JP 11476496A JP H09302462 A JPH09302462 A JP H09302462A
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- sputtering target
- content
- ferroelectric film
- powder
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体メモリー
などのキャパシタ用薄膜など強誘電体膜形成用スパッタ
リングターゲットに関するものである。TECHNICAL FIELD The present invention relates to a sputtering target for forming a ferroelectric film such as a thin film for a capacitor such as a semiconductor memory.
【０００２】[0002]
【従来の技術】一般に、ＢａＴｉＯ3 などのＢａおよび
Ｔｉの複合酸化物（以下、ＢａＴｉ複合酸化物とい
う）、ＳｒＴｉＯ3 などのＳｒおよびＴｉの複合酸化物
（以下、ＳｒＴｉ複合酸化物という）並びに（Ｂａ，Ｓ
ｒ）ＴｉＯ3 などのＢａ、ＳｒおよびＴｉの複合酸化物
（以下、ＢａＳｒＴｉ複合酸化物という）などの焼結体
からなるからなるスパッタリングターゲットを用いてペ
ロブスカイト構造を有する強誘電体膜を形成し、半導体
メモリー等におけるキャパシタ用薄膜として用いること
は知られている。2. Description of the Related Art In general, Ba and Ti compound oxides such as BaTiO 3 (hereinafter referred to as BaTi compound oxides), Sr and Ti compound oxides such as SrTiO 3 (hereinafter referred to as SrTi compound oxides) and ( Ba, S
r) A ferroelectric film having a perovskite structure is formed by using a sputtering target made of a sintered body such as a composite oxide of Ba, Sr and Ti such as TiO 3 (hereinafter referred to as BaSrTi composite oxide), It is known to be used as a thin film for capacitors in semiconductor memories and the like.
【０００３】前記ＢａＴｉ複合酸化物、ＳｒＴｉ複合酸
化物またはＢａＳｒＴｉ複合酸化物焼結体からなる強誘
電体膜形成用スパッタリングターゲットは、市販のＢａ
Ｔｉ複合酸化物粉末、ＳｒＴｉ複合酸化物粉末またはＢ
ａＳｒＴｉ複合酸化物粉末を購入し、このＢａＴｉ複合
酸化物粉末、ＳｒＴｉ複合酸化物粉末またはＢａＳｒＴ
ｉ複合酸化物粉末をそれぞれ圧力：１５０ｋｇ／ｃ
ｍ2 、温度：１２００〜１３５０℃、０．５〜３時間保
持の条件でホットプレスすることにより製造する。前記
ホットプレスされたＢａＴｉ複合酸化物、ＳｒＴｉ複合
酸化物またはＢａＳｒＴｉ複合酸化物からなる焼結体
は、機械加工して所定のターゲット形状に仕上げられ
る。A sputtering target for forming a ferroelectric film made of the BaTi complex oxide, SrTi complex oxide or BaSrTi complex oxide sintered body is a commercially available Ba target.
Ti composite oxide powder, SrTi composite oxide powder or B
Purchase aSrTi complex oxide powder, and use this BaTi complex oxide powder, SrTi complex oxide powder or BaSrT
i Complex oxide powder pressure: 150 kg / c
It is manufactured by hot pressing under the conditions of m 2 , temperature: 1200 to 1350 ° C. and holding for 0.5 to 3 hours. The hot-pressed sintered body of BaTi complex oxide, SrTi complex oxide, or BaSrTi complex oxide is machined into a predetermined target shape.
【０００４】[0004]
【発明が解決しようとする課題】近年、半導体メモリー
の大量生産とコストダウンのために、高出力でスパッタ
リングし、高速成膜することにより短時間で強誘電体膜
を形成しょうとしている。しかし、従来の強誘電体膜形
成用スパッタリングターゲットを用いて成膜速度：１０
０オングストローム／ｍｉｎ．以上の高速スパッタリン
グ成膜を行うと、ターゲット表面が鱗片状に剥離した
り、ターゲット全体が割れてしまうことがあり、また１
００オングストローム／ｍｉｎ．以上の高速スパッタリ
ング成膜を行うためには、ターゲットを高密度化してタ
ーゲットの強度および熱伝導度を上げる必要があるが、
従来の原料を用いてホットプレスによりターゲットを製
造すると、ホットプレス上がりで割れが発生しやすく、
製品の歩留まりが低かった。In recent years, in order to mass-produce semiconductor memories and reduce costs, it has been attempted to form a ferroelectric film in a short time by sputtering at a high output and forming a film at a high speed. However, using a conventional sputtering target for forming a ferroelectric film, the film formation rate: 10
0 angstrom / min. When the above high-speed sputtering film formation is performed, the target surface may peel off in a scaly form or the entire target may crack.
00 angstroms / min. In order to perform the above high-speed sputtering film formation, it is necessary to densify the target to increase the strength and thermal conductivity of the target.
When a target is manufactured by hot pressing using conventional raw materials, cracks are likely to occur after hot pressing,
The product yield was low.
【０００５】[0005]
【課題を解決するための手段】そこで、本発明者らは、
高電力をかけて高速スパッタリング成膜しても割れおよ
び剥離が生ずることがなく、さらにスパッタリングター
ゲット製造時の割れが発生せすることのない強誘電体膜
形成用スパッタリングターゲットを開発すべく研究を行
なった結果、（ａ）従来の強誘電体膜形成用スパッタリ
ングターゲットには、炭素が５００〜１０００ｐｐｍ程
度含まれており、前記高速スパッタリング成膜時の割れ
および剥離は、炭素が大きく影響を及ぼすところから、
強誘電体膜形成用スパッタリングターゲットに含まれる
炭素は可及的に少ない方がよく、Ｃ：３００ｐｐｍ以下
に抑える必要がある、（ｂ）従来の強誘電体膜形成用ス
パッタリングターゲットの原料粉末として用いる市販の
ＢａＴｉ複合酸化物粉末、ＳｒＴｉ複合酸化物粉末また
はＢａＳｒＴｉ複合酸化物粉末には、いずれも炭素が５
００〜１０００ｐｐｍ程度含まれており、この炭素が５
００〜１０００ｐｐｍ程度含まれているＢａＴｉ複合酸
化物粉末、ＳｒＴｉ複合酸化物粉末またはＢａＳｒＴｉ
複合酸化物粉末を用いて強誘電体膜形成用スパッタリン
グターゲットを製造すると、スパッタリングターゲット
製造時のホットプレス上がりで割れが発生するところか
ら、原料粉末に含まれる炭素は、可及的に少ない方がよ
く、Ｃ：３００ｐｐｍ以下に抑える必要がある、という
知見を得たのである。Means for Solving the Problems Accordingly, the present inventors have:
Research is conducted to develop a sputtering target for ferroelectric film formation that does not cause cracking or peeling even when high-speed sputtering film formation is performed with high power, and does not cause cracking during sputtering target manufacturing. As a result, (a) the conventional sputtering target for forming a ferroelectric film contains carbon in an amount of about 500 to 1000 ppm, and carbon has a great influence on cracking and peeling during the high-speed sputtering film formation. ,
Carbon contained in the sputtering target for forming a ferroelectric film should be as small as possible, and it is necessary to suppress C: 300 ppm or less. (B) Used as a raw material powder for a conventional sputtering target for forming a ferroelectric film Commercially available BaTi complex oxide powder, SrTi complex oxide powder, or BaSrTi complex oxide powder all have 5 carbon.
It is contained in the range of about 0.00 to 1000 ppm, and this carbon is 5
BaTi composite oxide powder, SrTi composite oxide powder or BaSrTi contained in an amount of about 0.00 to 1000 ppm
When a sputtering target for forming a ferroelectric film is manufactured using a composite oxide powder, cracks occur at the time of hot pressing at the time of manufacturing the sputtering target. Therefore, carbon contained in the raw material powder should be as small as possible. It was often found that C: needs to be suppressed to 300 ppm or less.
【０００６】この発明は、かかる知見に基づいて成され
たものであって、（１）Ｃ含有量が３００ｐｐｍ以下の
ＢａＴｉ複合酸化物焼結体からなる強誘電体膜形成用ス
パッタリングターゲット。（２）Ｃ含有量が３００ｐｐ
ｍ以下のＳｒＴｉ複合酸化物焼結体からなる強誘電体膜
形成用スパッタリングターゲット、（３）Ｃ含有量が３
００ｐｐｍ以下のＢａＳｒＴｉ複合酸化物焼結体からな
る強誘電体膜形成用スパッタリングターゲット、（４）
Ｃ含有量が３００ｐｐｍ以下のＢａおよびＴｉの複合酸
化物粉末、Ｃ含有量が３００ｐｐｍ以下のＳｒおよびＴ
ｉの複合酸化物粉末、またはＣ含有量が３００ｐｐｍ以
下のＢａ、ＳｒおよびＴｉの複合酸化物粉末を焼結する
強誘電体膜形成用スパッタリングターゲットの製造方
法、に特徴を有するものである。The present invention has been made based on the above findings, and (1) a sputtering target for forming a ferroelectric film, comprising a BaTi complex oxide sintered body having a C content of 300 ppm or less. (2) C content is 300 pp
A sputtering target for forming a ferroelectric film, which is composed of a SrTi composite oxide sintered body of m or less, (3) C content is 3
A sputtering target for forming a ferroelectric film, comprising a BaSrTi compound oxide sintered body of 00 ppm or less, (4)
Composite oxide powder of Ba and Ti having a C content of 300 ppm or less, Sr and T having a C content of 300 ppm or less
The method for producing a sputtering target for forming a ferroelectric film comprises sintering a composite oxide powder of i or a composite oxide powder of Ba, Sr, and Ti having a C content of 300 ppm or less.
【０００７】ターゲットに含まれるＣ含有量は、高出力
スパッタリング中のターゲットの割れおよび剥離に大き
く影響を及ぼすところから、可及的に少ない方が好まし
いが、３００ｐｐｍを越えて含有すると、高出力スパッ
タリング中の全てのターゲットに割れおよび剥離が発生
するので好ましくない。したがって、Ｃの含有量を３０
０ｐｐｍ以下に定めた。Ｃ含有量の一層好ましい範囲は
１００ｐｐｍ以下である。The C content contained in the target is preferably as small as possible because it greatly affects the cracking and peeling of the target during high power sputtering, but if it is contained in excess of 300 ppm, the high power sputtering will be performed. It is not preferable because cracking and peeling occur in all the targets inside. Therefore, the content of C is 30
It was set to 0 ppm or less. The more preferable range of the C content is 100 ppm or less.
【０００８】また、炭素が５００〜１０００ｐｐｍ程度
含まれている市販のＢａＴｉ複合酸化物粉末、ＳｒＴｉ
複合酸化物粉末またはＢａＳｒＴｉ複合酸化物粉末を原
料粉末として用いるとホットプレス上がりで割れが発生
するのは、焼結は周囲から中心部に向かって進行すると
ころから、焼結体の中央部に発生したＣＯガスが逃げ場
を失い、焼結体を破壊しすることによるものと考えられ
る。Further, a commercially available BaTi composite oxide powder containing about 500 to 1000 ppm of carbon, SrTi.
When the complex oxide powder or the BaSrTi complex oxide powder is used as the raw material powder, cracking occurs after hot pressing, because the sintering progresses from the periphery to the center part, and therefore occurs in the center part of the sintered body. It is considered that the generated CO gas loses its escape and destroys the sintered body.
【０００９】この発明で使用する原料粉末であるＣ含有
量が３００ｐｐｍ以下のＢａＴｉ複合酸化物粉末、Ｓｒ
Ｔｉ複合酸化物粉末またはＢａＳｒＴｉ複合酸化物粉末
は、市販のＢａＴｉ複合酸化物粉末、ＳｒＴｉ複合酸化
物粉末またはＢａＳｒＴｉ複合酸化物粉末を、大気中、
温度：１１００℃、６時間保持の条件で加熱することに
より製造することができる。これらＢａＴｉ複合酸化物
粉末、ＳｒＴｉ複合酸化物粉末またはＢａＳｒＴｉ複合
酸化物粉末は、１１００℃に加熱しても焼結することは
無い。The raw material powder used in the present invention is a BaTi complex oxide powder having a C content of 300 ppm or less, Sr.
The Ti complex oxide powder or the BaSrTi complex oxide powder is a commercially available BaTi complex oxide powder, SrTi complex oxide powder or BaSrTi complex oxide powder in the atmosphere,
It can be produced by heating at a temperature of 1100 ° C. and holding for 6 hours. These BaTi compound oxide powder, SrTi compound oxide powder, and BaSrTi compound oxide powder do not sinter even when heated to 1100 ° C.
【００１０】[0010]
市販の純度：９９．９％のＢａＴｉＯ3 粉末、ＳｒＴｉ
Ｏ3 粉末、（Ｂａ0.75，Ｓｒ0.25）ＴｉＯ3 粉末、（Ｂ
ａ0.5 ，Ｓｒ0.5 ）ＴｉＯ3 粉末および（Ｂａ 0.25，Ｓ
ｒ0.75）ＴｉＯ3 粉末を購入し、Ｃ含有量を測定したと
ころ、表１に示されるＣが含まれていた。 Commercial purity: 99.9% BaTiO 3.ThreePowder, SrTi
OThreePowder, (Ba0.75, Sr0.25) TiOThreePowder, (B
a0.5, Sr0.5) TiOThreePowder and (Ba 0.25, S
r0.75) TiOThreeI bought the powder and measured the C content.
Around the time, C shown in Table 1 was included.
【００１１】この市販のＢａＴｉＯ3 粉末、ＳｒＴｉＯ
3 粉末、（Ｂａ0.75，Ｓｒ0.25）ＴｉＯ3 粉末、（Ｂａ
0.5 ，Ｓｒ0.5 ）ＴｉＯ3 粉末および（Ｂａ0.25，Ｓｒ
0.75）ＴｉＯ3 粉末を，大気中、１１００℃で１時間保
持の条件で加熱処理することにより脱炭し、表１に示さ
れる成分組成の極低炭素複合酸化物粉末を作製した。This commercially available BaTiO 3 powder, SrTiO 3
3 powder, (Ba 0.75 , Sr 0.25 ) TiO 3 powder, (Ba
0.5 , Sr 0.5 TiO 3 powder and (Ba 0.25 , Sr
The 0.75 TiO 3 powder was decarburized by heat treatment in the air at 1100 ° C. for 1 hour, to produce an ultra-low carbon composite oxide powder having the component composition shown in Table 1.
【００１２】[0012]
【表１】 [Table 1]
【００１３】実施例 加熱処理して得られた表１に示される炭素濃度の極低炭
素複合酸化物粉末をボールミルに入れて粉砕し、平均粒
径：１〜５μｍを有する極低炭素複合酸化物粉末を製造
し、さらに得られた極低炭素複合酸化物粉末をグラファ
イトモールドに充填し、 昇温速度：５℃／ｍｉｎ、 加熱温度：１３００℃、 圧力：１５０ｔｏｎ／ｃｍ2 、 保持時間：１時間、 冷却：炉冷、 の条件でホットプレスした後、表面を研削することによ
り、直径：３５０ｍｍ、厚さ：６ｍｍの寸法を有する本
発明スパッタリングターゲット（以下、本発明ターゲッ
トという）１〜５を作製した。得られた本発明ターゲッ
ト１〜５のＣ含有量を表２に示す。EXAMPLE An ultra-low carbon composite oxide powder having a carbon concentration shown in Table 1 obtained by heat treatment was put into a ball mill and pulverized to have an average particle size of 1 to 5 μm. The powder is manufactured, and the obtained ultra-low carbon composite oxide powder is filled in a graphite mold, and the temperature rising rate is 5 ° C / min, the heating temperature is 1300 ° C, the pressure is 150 ton / cm 2 , and the holding time is 1 hour. Cooling: furnace cooling, hot pressing, and then grinding the surface to produce sputtering targets 1 to 5 of the present invention (hereinafter referred to as targets of the present invention) having a diameter of 350 mm and a thickness of 6 mm. did. Table 2 shows the C contents of the obtained inventive targets 1 to 5.
【００１４】さらに、本発明ターゲット１〜５につい
て、同一原料で１０回ずつホットプレスを行って割れが
発生せずにホットプレスできたターゲットの成功枚数を
測定し、その結果を表２に示した。次に、割れが発生せ
ずにホットプレスできたターゲットをＩｎ−Ｓｎはんだ
により水冷銅板に接合し、高周波マグネトロンスパッタ
装置内にセットし、 雰囲気ガス：Ａｒと酸素の混合ガス（Ａｒ：Ｏ＝１：
１）、 雰囲気圧力：１ｐａ、 周波数：１３．５６Ｍｈｚ、 出力：６０００Ｗ、 時間：５０時間、 の条件にてスパッタし、ターゲットに鱗片状に割れが発
生したか否かを黙視にて観察し、その結果も表２に示し
た。Further, the targets 1 to 5 of the present invention were hot-pressed 10 times with the same raw material to measure the number of successful targets which could be hot-pressed without cracking. The results are shown in Table 2. . Next, a target that could be hot-pressed without cracking was bonded to a water-cooled copper plate with In—Sn solder and set in a high frequency magnetron sputtering device, and mixed gas of atmosphere gas: Ar and oxygen (Ar: O = 1) :
1), atmospheric pressure: 1 pa, frequency: 13.56 Mhz, output: 6000 W, time: 50 hours. Sputtering was carried out, and it was observed visually whether or not the target had scale-like cracks. The results are also shown in Table 2.
【００１５】従来例 表１に示される炭素濃度の市販のＢａＴｉＯ3 粉末、Ｓ
ｒＴｉＯ3 粉末、（Ｂａ0.75，Ｓｒ0.25）ＴｉＯ3 粉
末、（Ｂａ0.5 ，Ｓｒ0.5 ）ＴｉＯ3 粉末および（Ｂａ
0.25，Ｓｒ0.75）ＴｉＯ3 粉末を実施例と同じ条件でホ
ットプレスすることにより従来スパッタリングターゲッ
ト（以下、従来ターゲットという）１〜５を作製した。
得られた従来ターゲット１〜５に含まれるＣ含有量を測
定し、同一原料で１０回ずつ行いって割れが発生せずに
ホットプレスできたターゲットの成功枚数を測定し、さ
らに割れが発生せずにホットプレスできたターゲットを
用いて実施例と同じ条件でスパッタし、その際にターゲ
ットに鱗片状割れが発生したか否かを黙視にて観察し、
その結果を表２に示した。Conventional Example Commercially available BaTiO 3 powder with carbon concentration shown in Table 1, S
rTiO 3 powder, (Ba 0.75 , Sr 0.25 ) TiO 3 powder, (Ba 0.5 , Sr 0.5 ) TiO 3 powder and (Ba
Conventional sputtering targets (hereinafter referred to as conventional targets) 1 to 5 were produced by hot pressing 0.25 , Sr 0.75 ) TiO 3 powder under the same conditions as in the examples.
The C content contained in each of the obtained conventional targets 1 to 5 was measured, and the same raw material was used 10 times to measure the number of successful targets that could be hot-pressed without cracking. Sputtering was carried out under the same conditions as in the example using a target that could be hot pressed without, observing whether or not scaly cracks occurred in the target at that time,
The results are shown in Table 2.
【００１６】[0016]
【表２】 [Table 2]
【００１７】[0017]
【発明の効果】表１〜表２に示される結果から、極低炭
素複合酸化物粉末を使用して得られたＣ含有量：３００
ｐｐｍ以下の本発明ターゲット１〜５は、いずれも市販
のＣ含有量：５００〜１０００ｐｐｍ含む複合酸化物粉
末を使用して得られたＣ含有量：４００ｐｐｍ以上含む
従来ターゲット１〜５に比べて、ホットプレスによる製
造時に割れが発生せず、またスパッタリング時に剥離ま
たは割れが生ずることなく高出力および高速成膜がで
き、産業上優れた効果を奏するものである。From the results shown in Tables 1 and 2, the C content obtained by using the ultra-low carbon composite oxide powder: 300
Each of the present targets 1 to 5 ppm or less is C-content obtained by using a commercially available complex oxide powder containing C content: 500 to 1000 ppm, as compared with the conventional targets 1 to 5 containing 400 ppm or more, It is possible to achieve high output and high speed film formation without cracking during manufacturing by hot pressing, and without peeling or cracking during sputtering, which is an excellent industrial effect.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/8242 Ｈ０１Ｌ 27/10 ６５１ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location H01L 21/8242 H01L 27/10 651
Claims (4)
びＴｉの複合酸化物焼結体からなることを特徴とする強
誘電体膜形成用スパッタリングターゲット。1. A sputtering target for forming a ferroelectric film, comprising a composite oxide sintered body of Ba and Ti having a C content of 300 ppm or less.
びＴｉの複合酸化物焼結体からなることを特徴とする強
誘電体膜形成用スパッタリングターゲット。2. A sputtering target for forming a ferroelectric film, comprising a composite oxide sintered body of Sr and Ti having a C content of 300 ppm or less.
ｒおよびＴｉの複合酸化物焼結体からなることを特徴と
する強誘電体膜形成用スパッタリングターゲット。3. Ba and S having a C content of 300 ppm or less.
A sputtering target for forming a ferroelectric film, comprising a composite oxide sintered body of r and Ti.
びＴｉの複合酸化物粉末、Ｃ含有量が３００ｐｐｍ以下
のＳｒおよびＴｉの複合酸化物粉末、またはＣ含有量が
３００ｐｐｍ以下のＢａ、ＳｒおよびＴｉの複合酸化物
粉末を焼結することを特徴とする強誘電体膜形成用スパ
ッタリングターゲットの製造方法。4. A complex oxide powder of Ba and Ti having a C content of 300 ppm or less, a complex oxide powder of Sr and Ti having a C content of 300 ppm or less, or Ba, Sr and Ti having a C content of 300 ppm or less. 2. A method of manufacturing a sputtering target for forming a ferroelectric film, which comprises sintering the composite oxide powder according to claim 1.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08114764A JP3127824B2 (en) | 1996-05-09 | 1996-05-09 | Sputtering target for forming ferroelectric film and method for manufacturing the same |
| TW085116344A TW343999B (en) | 1996-02-28 | 1996-12-31 | High density sputtering target for forming ferroelectric film |
| KR1019970006270A KR100494610B1 (en) | 1996-02-28 | 1997-02-27 | High-Density Sputtering Target for Forming High-Dielectric Films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08114764A JP3127824B2 (en) | 1996-05-09 | 1996-05-09 | Sputtering target for forming ferroelectric film and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09302462A true JPH09302462A (en) | 1997-11-25 |
| JP3127824B2 JP3127824B2 (en) | 2001-01-29 |
Family
ID=14646106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08114764A Expired - Fee Related JP3127824B2 (en) | 1996-02-28 | 1996-05-09 | Sputtering target for forming ferroelectric film and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3127824B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006241595A (en) * | 2005-02-01 | 2006-09-14 | Tosoh Corp | Sinter, sputtering target and molding die, and production process of sintered compact |
| TWI385139B (en) * | 2005-02-01 | 2013-02-11 | Tosoh Corp | A sintered body, a sputtering target and a forming die, and a sintered body manufacturing method using the same |
| JP2020183574A (en) * | 2019-04-26 | 2020-11-12 | Ｊｘ金属株式会社 | Potassium sodium niobate sputtering target |
-
1996
- 1996-05-09 JP JP08114764A patent/JP3127824B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006241595A (en) * | 2005-02-01 | 2006-09-14 | Tosoh Corp | Sinter, sputtering target and molding die, and production process of sintered compact |
| TWI385139B (en) * | 2005-02-01 | 2013-02-11 | Tosoh Corp | A sintered body, a sputtering target and a forming die, and a sintered body manufacturing method using the same |
| US8419400B2 (en) | 2005-02-01 | 2013-04-16 | Tosoh Corporation | Sintered body, sputtering target and molding die, and process for producing sintered body employing the same |
| JP2014129231A (en) * | 2005-02-01 | 2014-07-10 | Tosoh Corp | Sintered compact and sputtering target |
| US9920420B2 (en) | 2005-02-01 | 2018-03-20 | Tosoh Corporation | Sintered body, sputtering target and molding die, and process for producing sintered body employing the same |
| JP2020183574A (en) * | 2019-04-26 | 2020-11-12 | Ｊｘ金属株式会社 | Potassium sodium niobate sputtering target |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3127824B2 (en) | 2001-01-29 |
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