JPH09246215A - Manufacture of semiconductor device and manufacturing apparatus - Google Patents
Manufacture of semiconductor device and manufacturing apparatusInfo
- Publication number
- JPH09246215A JPH09246215A JP4589296A JP4589296A JPH09246215A JP H09246215 A JPH09246215 A JP H09246215A JP 4589296 A JP4589296 A JP 4589296A JP 4589296 A JP4589296 A JP 4589296A JP H09246215 A JPH09246215 A JP H09246215A
- Authority
- JP
- Japan
- Prior art keywords
- plated
- wafer
- plating
- cassette
- spinner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体デバイス
の製造過程のめっき工程において用いられる半導体装置
の製造方法および製造装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus used in a plating step of a semiconductor device manufacturing process.
【０００２】[0002]
【従来の技術】半導体デバイス上に金等をめっきするに
当たって従来の半導体装置の製造装置についての概略構
成を図４に示す。図４に示す従来のめっき装置は、めっ
き液槽１０、めっき液１１、アノードメッシュ１２、被
めっきウェハ１３からなる構造となっている。アノード
メッシュ１２と被めっきウェハ１３の間に一定電流を流
しカソード部分である被めっきウェハ１３にメッキ液１
１の成分中の金属がめっきされる。2. Description of the Related Art FIG. 4 shows a schematic structure of a conventional semiconductor device manufacturing apparatus for plating a semiconductor device with gold or the like. The conventional plating apparatus shown in FIG. 4 has a structure including a plating solution tank 10, a plating solution 11, an anode mesh 12, and a wafer 13 to be plated. A constant current is passed between the anode mesh 12 and the wafer to be plated 13, and the plating solution 1 is applied to the wafer to be plated 13, which is the cathode portion.
The metal in component 1 is plated.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記図
４に示す従来例では、めっき液１１の攪拌が難しいた
め、被めっきウェハ１３に形成されるめっきの高さばら
つきが大きくなってしまい易いという問題点があった。
また、大量にめっきを行う際、被めっきウェハ１３とア
ノードメッシュ１２を水平に並べる構造になるため、め
っき液槽１０が大きくなってしまいがちであり、装置全
体が大型化するという問題点もあった。However, in the conventional example shown in FIG. 4, since it is difficult to stir the plating solution 11, the height variation of the plating formed on the wafer 13 to be plated tends to become large. There was a point.
Further, when a large amount of plating is performed, since the wafer 13 to be plated and the anode mesh 12 are horizontally arranged, the plating solution tank 10 tends to be large, and there is a problem that the entire apparatus becomes large. It was
【０００４】したがって、この発明の目的は、上記問題
点に鑑み、めっきの高さばらつきを抑制でき小型化を図
ることができる半導体装置の製造方法および製造装置を
提供することである。Therefore, in view of the above problems, an object of the present invention is to provide a method and an apparatus for manufacturing a semiconductor device which can suppress variations in plating height and can be miniaturized.
【０００５】[0005]
【課題を解決するための手段】請求項１記載の半導体装
置の製造方法は、めっき液が注入されたスピンナの内部
で被めっきウェハを回転させながらめっきを行うことを
特徴とするものである。このように、被めっきウェハの
入ったスピンナの内部にめっき液を充満させ被めっきウ
ェハ自体を回転させ、めっきを実施することにより、め
っき液が均等に被めっきウェハ全体に攪拌され、被めっ
きウェハに形成されるめっきの高さばらつきを抑制でき
る。このため、被めっきウェハに均等にめっきを行うこ
とができる。A method of manufacturing a semiconductor device according to a first aspect of the present invention is characterized in that plating is performed while rotating a wafer to be plated inside a spinner into which a plating solution is injected. In this way, the spinner containing the wafer to be plated is filled with the plating solution, the wafer to be plated is rotated, and the plating is performed, so that the plating solution is evenly agitated over the entire wafer to be plated, It is possible to suppress variations in the height of the plating formed on the substrate. Therefore, the wafer to be plated can be plated uniformly.
【０００６】請求項２記載の半導体装置の製造方法は、
請求項１において、被めっきウェハの回転方向を周期的
に反転させるものである。このように、被めっきウェハ
の回転方向を周期的に回転方向を反転させたので、めっ
き液がより一層攪拌され、被めっきウェハに形成される
めっきの高さばらつきをさらに抑制できる。According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device.
In Claim 1, the rotation direction of the to-be-plated wafer is periodically reversed. In this way, since the rotation direction of the plated wafer is periodically reversed, the plating solution is further agitated, and it is possible to further suppress variations in the height of the plating formed on the plated wafer.
【０００７】請求項３記載の半導体装置の製造方法は、
請求項１または２において、めっき液を注入する前にス
ピンナの内部の気圧を減圧するものである。このよう
に、めっき液を注入する前にスピンナの内部の気圧を減
圧するので、めっき液が被めっきウェハに対してなじみ
易くなる。請求項４記載の半導体装置の製造装置は、被
めっきウェハを直列に配置することができるアノード電
極部と被めっきウェハに接触するカソード電極部で構成
されたカセットと、このカセットが挿入されるとともに
めっき液が注入されカセットを回転させることができる
スピンナとを備えたものである。A method of manufacturing a semiconductor device according to claim 3 is
In Claim 1 or 2, the pressure inside the spinner is reduced before the plating solution is injected. In this way, since the atmospheric pressure inside the spinner is reduced before the plating solution is injected, the plating solution easily fits into the wafer to be plated. According to another aspect of the present invention, there is provided a semiconductor device manufacturing apparatus, wherein a cassette including an anode electrode portion capable of arranging wafers to be plated in series and a cathode electrode portion in contact with the wafer to be plated, and the cassette being inserted And a spinner capable of rotating the cassette by injecting a plating solution.
【０００８】このように、被めっきウェハを直列に配置
することができるアノード電極部と被めっきウェハに接
触するカソード電極部で構成されたカセットを備えてい
るので、従来のアノード電極と被めっきウェハを水平方
向に並べていためっき装置に比べて装置のコンパクト化
が可能となる。また、カセットがスピンナに挿入される
とともにこのスピンナにてカセットを回転させることが
できるので、スピンナの内部に注入されためっき液が均
等に被めっきウェハ全体に攪拌され、被めっきウェハに
形成されるめっきの高さばらつきを抑制できる。このた
め、被めっきウェハに均等にめっきを行うことができ
る。As described above, the conventional anode electrode and the wafer to be plated are equipped with the cassette composed of the anode electrode portion capable of arranging the wafer to be plated in series and the cathode electrode portion in contact with the wafer to be plated. The equipment can be made more compact than the plating equipment in which the plates are arranged in the horizontal direction. In addition, since the cassette can be rotated by the spinner while being inserted into the spinner, the plating solution injected into the spinner is evenly stirred over the entire wafer to be plated and formed on the wafer to be plated. Variations in plating height can be suppressed. Therefore, the wafer to be plated can be plated uniformly.
【０００９】請求項５記載の半導体装置の製造装置は、
請求項４において、カセットを回転させる回転軸の軸方
向が被めっきウェハに直交したものである。このよう
に、カセットを回転させる回転軸の軸方向が被めっきウ
ェハに直交したので、被めっきウェハ全体に攪拌しため
っき液が行き渡り、被めっきウェハに形成されるめっき
の高さばらつきをさらに抑制できる。According to a fifth aspect of the present invention, there is provided an apparatus for manufacturing a semiconductor device.
In Claim 4, the axial direction of the rotating shaft that rotates the cassette is orthogonal to the wafer to be plated. In this way, since the axial direction of the rotating shaft that rotates the cassette is orthogonal to the wafer to be plated, the stirred plating solution is spread over the entire wafer to be plated, and it is possible to further suppress variations in the height of plating formed on the wafer to be plated. .
【００１０】[0010]
【発明の実施の形態】この発明の実施の形態の半導体装
置の製造方法および製造装置を図１、図２および図３に
基づいて説明する。図１はこの発明の実施の形態とし
て、半導体装置の製造工程に用いられるめっき装置の概
略構成図である。ＴＡＢ（ｔａｐｅ ａｕｔｏｍａｔｅ
ｄ ｂｏｎｄｉｎｇ）で用いられるバンプを形成する方
法としてこのめっき方法が用いられ、Ａｕ、Ａｇ、はん
だ等がＡｌパッド上に形成される。めっき液は主成分で
あるＡｕやＡｇ、はんだの他に亜硫酸、硫酸、タリウム
等が溶解しためっき液やシアンが溶解しためっき液をよ
く用いている。めっき方法としても使用するめっき液に
よって電解めっき、無電解めっき等がある。DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device manufacturing method and manufacturing apparatus according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a schematic configuration diagram of a plating apparatus used in a manufacturing process of a semiconductor device as an embodiment of the present invention. TAB (tape automate)
This plating method is used as a method for forming bumps used in d bonding, and Au, Ag, solder, etc. are formed on Al pads. As the plating solution, a plating solution in which sulfur, sulfuric acid, thallium, or the like is dissolved in addition to Au or Ag, which is a main component, or a solder, or a solution in which cyan is dissolved is often used. As a plating method, there are electrolytic plating, electroless plating and the like depending on the plating solution used.
【００１１】図１に示すとおり、この装置はカセット３
とこのカセット３が挿入されるスピンナ１とを備えてい
る。カセット３は、図２および図３に示すとおり、複数
枚の被めっきウェハ４…を直列に配置することができる
アノード電極部９と、回転軸６と直結されるアノード電
極回転軸支持部９ａと、被めっきウェハ４…に接触する
カソード電極部８（斜線で示した部分）と、被めっきウ
ェハ４を支持するためのカソード電極ウェハ支持部８ｂ
と、回転軸７と連結されるカソード電極回転軸支持部８
ａで構成されている。この場合、各被めっきウェハ４は
アノード電極部９と対向するように、一枚ずつアノード
電極部９で仕切られている。また、カソード電極部８と
アノード電極部９は接しているが相互に絶縁されてい
る。As shown in FIG. 1, the device is a cassette 3
And a spinner 1 into which the cassette 3 is inserted. As shown in FIGS. 2 and 3, the cassette 3 includes an anode electrode portion 9 on which a plurality of wafers 4 to be plated can be arranged in series, and an anode electrode rotation shaft support portion 9a directly connected to the rotation shaft 6. , The cathode electrode portion 8 (the hatched portion) that is in contact with the wafer 4 to be plated, and the cathode electrode wafer support portion 8b for supporting the wafer 4 to be plated.
And a cathode electrode rotating shaft support portion 8 connected to the rotating shaft 7.
a. In this case, each wafer 4 to be plated is partitioned by the anode electrode portion 9 so as to face the anode electrode portion 9. Further, the cathode electrode portion 8 and the anode electrode portion 9 are in contact with each other, but are insulated from each other.
【００１２】スピンナ１は、内部にめっき液２が注入さ
れ、回転軸６，７によりカセット３を回転させることが
できる。回転軸６，７の軸方向は被めっきウェハ４に直
交し、一方の回転軸６はアノード電極部９の回転軸支持
部９ａに接合され、他方の回転軸７はカソード電極部８
の回転軸支持部８ａに接合されている。これにより、回
転軸６，７を通じてそれぞれアノード電極部９とカソー
ド電極部８に電流供給できるようにしている。５は減圧
機で、スピンナ１の内部の気圧を減圧する。１ａはめっ
き液２の注入口である。The spinner 1 is filled with the plating solution 2 and can rotate the cassette 3 by the rotating shafts 6 and 7. The rotating shafts 6 and 7 are orthogonal to the wafer 4 to be plated, one rotating shaft 6 is joined to the rotating shaft supporting portion 9a of the anode electrode portion 9, and the other rotating shaft 7 is the cathode electrode portion 8.
Is joined to the rotary shaft support portion 8a. As a result, current can be supplied to the anode electrode portion 9 and the cathode electrode portion 8 through the rotating shafts 6 and 7, respectively. A pressure reducer 5 reduces the pressure inside the spinner 1. 1a is an inlet for the plating solution 2.
【００１３】つぎに、半導体装置の製造方法について説
明する。カセット３に被めっきウェハ４をチャージす
る。被めっきウェハ４はカソード電極部８のウェハ支持
部８ｂに接触し、そこから電流が供給される仕組みであ
る。このカセット３をスピンナ１に挿入する。ここで、
減圧機５によってスピンナ１の内部の気圧を減圧する。
減圧を行う理由として、減圧後にスピンナ１に内部にめ
っき液２が注入されるが、その際、めっき液２が被めっ
きウェハ４に対して、なじみ易くする目的があるためで
ある。そして、スピンナ１の内部にめっき液２が充満さ
れた後、スピンナ１がカセット４を回転させ始める。回
転方法としては回転軸６，７を中心にした回転を行う。
その際、時計回り、反時計回り等、時間ごとに回転方法
が変化する回転を行う。この回転が始まるとともに、被
めっきウェハ４とカセット３に電流供給が始まり、被め
っきウェハ４にめっきが形成される。電流供給の方法と
しては回転軸６，７よりそれぞれプラス、マイナス電流
が供給される。Next, a method of manufacturing the semiconductor device will be described. The wafer 3 to be plated is charged in the cassette 3. The wafer 4 to be plated is in contact with the wafer supporting portion 8b of the cathode electrode portion 8 and a current is supplied from there. The cassette 3 is inserted into the spinner 1. here,
The pressure inside the spinner 1 is reduced by the pressure reducer 5.
The reason for performing the pressure reduction is that the plating solution 2 is injected into the spinner 1 after the pressure reduction, and at that time, the purpose is to make the plating solution 2 easily fit into the wafer 4 to be plated. Then, after the spinner 1 is filled with the plating solution 2, the spinner 1 starts rotating the cassette 4. As a rotation method, rotation about the rotation axes 6 and 7 is performed.
At that time, rotation such that the rotation method changes with time such as clockwise rotation and counterclockwise rotation is performed. When this rotation is started, current is supplied to the wafer 4 to be plated and the cassette 3 to form plating on the wafer 4 to be plated. As a method of supplying current, positive and negative currents are supplied from the rotating shafts 6 and 7, respectively.
【００１４】この実施の形態によれば、被めっきウェハ
４を配置したカセット３をスピンナ１に挿入し、スピン
ナ１の内部にめっき液２を注入した後、スピンナ１にて
カセット３を回転させ、めっきを実施することにより、
めっき液２が均等に被めっきウェハ４全体に攪拌され、
被めっきウェハ４に形成されるめっきの高さばらつきを
抑制できる。この場合、カセット３を回転させる回転軸
６，７の軸方向が被めっきウェハ４に直交し、被めっき
ウェハ４の回転方向を周期的に反転させたので、めっき
液２がより一層攪拌され、被めっきウェハ４全体に攪拌
しためっき液２が行き渡り、被めっきウェハ４に形成さ
れるめっきの高さばらつきをさらに抑制できる。According to this embodiment, the cassette 3 in which the wafer 4 to be plated is placed is inserted into the spinner 1, the plating solution 2 is injected into the spinner 1, and then the cassette 3 is rotated by the spinner 1. By performing plating,
The plating solution 2 is evenly stirred on the entire wafer 4 to be plated,
It is possible to suppress variations in the height of the plating formed on the plated wafer 4. In this case, since the axial directions of the rotating shafts 6 and 7 for rotating the cassette 3 are orthogonal to the wafer to be plated 4, and the rotating direction of the wafer to be plated 4 is periodically reversed, the plating solution 2 is further stirred. The stirred plating solution 2 is spread over the entire wafer 4 to be plated, and it is possible to further suppress variations in the height of the plating formed on the wafer 4 to be plated.
【００１５】また、アノード電極部９をカセット３に
し、そこに直列に被めっきウェハ４を数枚チャージする
ことができるので、従来のアノード電極と被めっきウェ
ハを水平方向に並べていためっき方法に比べて装置のコ
ンパクト化が可能となる。なお、無電解が可能なめっき
液を用いれば電流供給がなくてもめっきは可能である。Further, since the anode electrode portion 9 is formed into the cassette 3 and several wafers 4 to be plated can be charged in series there, compared to the conventional plating method in which the anode electrode and the wafer to be plated are arranged horizontally. The device can be made compact. It should be noted that if an electroless plating solution is used, plating can be performed without supplying current.
【００１６】[0016]
【発明の効果】この発明の請求項１記載の半導体装置の
製造方法によれば、被めっきウェハの入ったスピンナの
内部にめっき液を充満させ被めっきウェハ自体を回転さ
せ、めっきを実施することにより、めっき液が均等に被
めっきウェハ全体に攪拌され、被めっきウェハに形成さ
れるめっきの高さばらつきを抑制できる。このため、被
めっきウェハに均等にめっきを行うことができる。According to the method of manufacturing a semiconductor device according to the first aspect of the present invention, plating is performed by filling the inside of the spinner containing the wafer to be plated with a plating solution and rotating the wafer to be plated itself. By this, the plating solution is uniformly stirred over the entire wafer to be plated, and it is possible to suppress variations in the height of the plating formed on the wafer to be plated. Therefore, the wafer to be plated can be plated uniformly.
【００１７】請求項２では、被めっきウェハの回転方向
を周期的に回転方向を反転させたので、めっき液がより
一層攪拌され、被めっきウェハに形成されるめっきの高
さばらつきをさらに抑制できる。請求項３では、めっき
液を注入する前にスピンナの内部の気圧を減圧するの
で、めっき液が被めっきウェハに対してなじみ易くな
る。In the second aspect, since the rotation direction of the plated wafer is periodically reversed, the plating solution is further agitated, and variation in height of the plating formed on the plated wafer can be further suppressed. . According to the third aspect, since the atmospheric pressure inside the spinner is reduced before the plating solution is injected, the plating solution is easily adapted to the wafer to be plated.
【００１８】この発明の請求項４記載の半導体装置の製
造装置によれば、被めっきウェハを直列に配置すること
ができるアノード電極部と被めっきウェハに接触するカ
ソード電極部で構成されたカセットを備えているので、
従来のアノード電極と被めっきウェハを水平方向に並べ
ていためっき装置に比べて装置のコンパクト化が可能と
なる。また、カセットがスピンナに挿入されるとともに
このスピンナにてカセットを回転させることができるの
で、スピンナの内部に注入されためっき液が均等に被め
っきウェハ全体に攪拌され、被めっきウェハに形成され
るめっきの高さばらつきを抑制できる。このため、被め
っきウェハに均等にめっきを行うことができる。According to the semiconductor device manufacturing apparatus of the fourth aspect of the present invention, there is provided a cassette comprising an anode electrode portion capable of arranging wafers to be plated in series and a cathode electrode portion in contact with the wafer to be plated. I have it, so
The apparatus can be made more compact than the conventional plating apparatus in which the anode electrode and the wafer to be plated are arranged horizontally. In addition, since the cassette can be rotated by the spinner while being inserted into the spinner, the plating solution injected into the spinner is evenly stirred over the entire wafer to be plated and formed on the wafer to be plated. Variations in plating height can be suppressed. Therefore, the wafer to be plated can be plated uniformly.
【００１９】請求項５では、カセットを回転させる回転
軸の軸方向が被めっきウェハに直交したので、被めっき
ウェハ全体に攪拌しためっき液が行き渡り、被めっきウ
ェハに形成されるめっきの高さばらつきをさらに抑制で
きる。In the present invention, since the axial direction of the rotating shaft for rotating the cassette is orthogonal to the wafer to be plated, the agitated plating solution spreads over the entire wafer to be plated, and the height of plating formed on the wafer to be plated varies. Can be further suppressed.
【図１】この発明の実施の形態の半導体装置の製造装置
の概略構成図である。FIG. 1 is a schematic configuration diagram of a semiconductor device manufacturing apparatus according to an embodiment of the present invention.
【図２】図１に係るカセットの概略構成図である。FIG. 2 is a schematic configuration diagram of the cassette according to FIG.
【図３】図２のカセットの斜視図である。FIG. 3 is a perspective view of the cassette of FIG.
【図４】従来例の半導体装置の製造装置の概略構成図で
ある。FIG. 4 is a schematic configuration diagram of a conventional semiconductor device manufacturing apparatus.
１ スピンナ ２ めっき液 ３ カセット ４ 被めっきウェハ ５ 減圧機 ６，７ 回転軸 ８ カソード電極部 ８ａ カソード電極回転軸支持部 ８ｂ カソード電極ウェハ支持部 ９ アノード電極部 ９ａ アノード電極回転軸支持部 １０ めっき液槽 １１ めっき液 １２ アノードメッシュ １３ 被めっきウェハ DESCRIPTION OF SYMBOLS 1 Spinner 2 Plating solution 3 Cassette 4 Wafer to be plated 5 Reducer 6,7 Rotating shaft 8 Cathode electrode part 8a Cathode electrode rotating shaft support part 8b Cathode electrode wafer supporting part 9 Anode electrode part 9a Anode electrode rotating shaft support part 10 Plating solution Tank 11 Plating solution 12 Anode mesh 13 Wafer to be plated
Claims (5)
被めっきウェハを回転させながらめっきを行うことを特
徴とする半導体装置の製造方法。1. A method for manufacturing a semiconductor device, wherein plating is performed while rotating a wafer to be plated inside a spinner into which a plating solution is injected.
転させる請求項１記載の半導体装置の製造方法。2. The method of manufacturing a semiconductor device according to claim 1, wherein the rotation direction of the wafer to be plated is periodically reversed.
の気圧を減圧する請求項１または２記載の半導体装置の
製造方法。3. The method for manufacturing a semiconductor device according to claim 1, wherein the pressure inside the spinner is reduced before the plating solution is injected.
できるアノード電極部と前記被めっきウェハに接触する
カソード電極部で構成されたカセットと、このカセット
が挿入されるとともにめっき液が注入され前記カセット
を回転させることができるスピンナとを備えた半導体装
置の製造装置。4. A cassette comprising an anode electrode portion capable of arranging wafers to be plated in series and a cathode electrode portion in contact with the wafer to be plated, and a cassette is inserted and a plating solution is injected into the cassette. An apparatus for manufacturing a semiconductor device, comprising a spinner capable of rotating a cassette.
被めっきウェハに直交した請求項４記載の半導体装置の
製造装置。5. The apparatus for manufacturing a semiconductor device according to claim 4, wherein an axial direction of a rotating shaft for rotating the cassette is orthogonal to a wafer to be plated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04589296A JP3490207B2 (en) | 1996-03-04 | 1996-03-04 | Cassette and semiconductor device manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04589296A JP3490207B2 (en) | 1996-03-04 | 1996-03-04 | Cassette and semiconductor device manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09246215A true JPH09246215A (en) | 1997-09-19 |
| JP3490207B2 JP3490207B2 (en) | 2004-01-26 |
Family
ID=12731903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04589296A Expired - Fee Related JP3490207B2 (en) | 1996-03-04 | 1996-03-04 | Cassette and semiconductor device manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3490207B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100293239B1 (en) * | 1999-06-23 | 2001-06-15 | 김무 | device and method for plating the semiconductor substrate |
| WO2003040430A1 (en) * | 2001-11-07 | 2003-05-15 | Ebara Corporation | Substrate processing apparatus and method |
| JP2014505163A (en) * | 2010-12-15 | 2014-02-27 | ハクシユタイナー，マルクス | Devices and methods for metallizing wafers |
-
1996
- 1996-03-04 JP JP04589296A patent/JP3490207B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100293239B1 (en) * | 1999-06-23 | 2001-06-15 | 김무 | device and method for plating the semiconductor substrate |
| WO2003040430A1 (en) * | 2001-11-07 | 2003-05-15 | Ebara Corporation | Substrate processing apparatus and method |
| US7141274B2 (en) | 2001-11-07 | 2006-11-28 | Ebara Corporation | Substrate processing apparatus and method |
| JP2014505163A (en) * | 2010-12-15 | 2014-02-27 | ハクシユタイナー，マルクス | Devices and methods for metallizing wafers |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3490207B2 (en) | 2004-01-26 |
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