JP2000256896A - Plating device - Google Patents
Plating deviceInfo
- Publication number
- JP2000256896A JP2000256896A JP11064987A JP6498799A JP2000256896A JP 2000256896 A JP2000256896 A JP 2000256896A JP 11064987 A JP11064987 A JP 11064987A JP 6498799 A JP6498799 A JP 6498799A JP 2000256896 A JP2000256896 A JP 2000256896A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- substrate
- plated
- plating solution
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体ウエハ等の被
めっき基板に銅めっき等の金属めっきを施すめっき装置
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating apparatus for performing metal plating such as copper plating on a substrate to be plated such as a semiconductor wafer.
【０００２】[0002]
【従来の技術】近年、半導体ウエハ等の表面に配線用の
微細な溝や穴等が形成された基板の該溝や穴等を埋める
のに、銅めっき等の金属めっき装置を用い、金属めっき
で該溝や穴を埋める手法が採用されている。従来この種
のめっき装置としてフェースダウン方式のめっき装置が
ある。該めっき装置は図１に示すように、めっき槽１０
０の上部に半導体ウエハ等の被めっき基板１０２をその
めっき面を下向きに配置し、めっきタンク１０３内のめ
っき液Ｑをポンプ１０４によりめっき液供給パイプ１０
５を通して、めっき槽本体１０１の底部から噴出させ、
被めっき基板１０２のめっき面に垂直にめっき液Ｑの噴
流を当てている。2. Description of the Related Art In recent years, a metal plating apparatus such as copper plating is used to fill a groove or a hole of a substrate having fine grooves or holes for wiring formed on a surface of a semiconductor wafer or the like. A method of filling the groove or hole with the above is adopted. Conventionally, there is a face-down type plating apparatus as this type of plating apparatus. The plating apparatus is, as shown in FIG.
The substrate 102 to be plated such as a semiconductor wafer is disposed with its plating surface facing downward on the upper part of the plating solution 0, and the plating solution Q in the plating tank 103 is supplied by the pump 104 to the plating solution supply pipe 10.
5 through the bottom of the plating tank body 101,
The jet of the plating solution Q is applied vertically to the plating surface of the substrate to be plated 102.
【０００３】めっき槽本体１０１をオーバーフローした
めっき液Ｑはめっき槽本体１０１の外側に配置された捕
集槽１０６により回収される。陽極電極１０７と陰極電
極１０８の間に所定の電圧を印加することにより、該陽
極電極１０７と被めっき基板１０２の間にめっき電流が
流れ、被めっき基板１０２のめっき面に銅めっき等の金
属めっき膜が形成される。[0003] The plating solution Q overflowing the plating tank body 101 is collected by a collection tank 106 disposed outside the plating tank body 101. By applying a predetermined voltage between the anode electrode 107 and the cathode electrode 108, a plating current flows between the anode electrode 107 and the substrate 102 to be plated, and a metal plating such as copper plating is applied to the plating surface of the substrate 102 to be plated. A film is formed.
【０００４】上記構成の従来のフェースダウン方式のめ
っき装置では、めっき液Ｑの噴流を被めっき基板１０２
に垂直に当てるために、被めっき基板に円周方向に等分
配された流れを作る必要があり、流れを層流とし、助走
距離をとる必要があるためめっき槽１００の深さ方向の
寸法が大きくなる。そのため、めっき槽１００を重ねて
配置することができず、後に詳述するように、めっき装
置の平面配置構成が大きくなり、省スペース化が図れな
いという問題があった。In the conventional face-down type plating apparatus having the above structure, the jet of the plating solution Q is applied to the substrate 102 to be plated.
It is necessary to make the flow equally distributed in the circumferential direction on the substrate to be plated in order to apply the flow vertically, and it is necessary to make the flow a laminar flow and take a running distance. growing. For this reason, the plating tanks 100 cannot be arranged in an overlapping manner, and as described later in detail, there is a problem that the planar arrangement of the plating apparatus becomes large and space cannot be saved.
【０００５】また、硫酸銅めっき液中のめっき抑制剤や
促進剤としての添加剤は種類によっては液の撹拌の速度
（被めっき基板１０２とめっき液Ｑとの相対速度）によ
って吸着量が変わり、被めっき基板１０２のめっき面の
微細な孔や溝への銅めっきの埋め込み性や、めっき膜の
膜厚の均一性を悪化させるという問題があった。[0005] Further, the amount of adsorption varies depending on the speed of stirring of the solution (relative speed between the substrate 102 to be plated and the plating solution Q) depending on the type of the additive as a plating inhibitor or accelerator in the copper sulfate plating solution. There has been a problem that the ability to embed copper plating into fine holes and grooves on the plating surface of the substrate to be plated 102 and the uniformity of the thickness of the plating film are deteriorated.
【０００６】また、陽極電極１０７を不溶解性の電極と
した場合、めっき液中の添加剤が酸化分解し異常に消耗
したり、発生する酸素により被めっき基板の表面や該表
面に形成された微細な孔や溝中にめっき欠陥が発生する
という問題があった。Further, when the anode electrode 107 is an insoluble electrode, the additives in the plating solution are oxidized and decomposed to be consumed abnormally, or are formed on the surface of the substrate to be plated or on the surface by the generated oxygen. There has been a problem that plating defects occur in fine holes and grooves.
【０００７】[0007]
【発明が解決しようとする課題】本発明は上述の点に鑑
みてなされたもので、被めっき基板のめっき面に平行に
めっき液を流すことにより、めっき槽の深さ寸法を小さ
くでき、且つ被めっき基板とめっき液との相対速度を均
一にし、めっき抑制剤や促進剤としての添加剤の吸着状
態を被めっき基板全面に一様にすることができ、被めっ
き基板の微細な孔や溝への金属めっきの埋め込み性が良
く、均一な膜厚の金属めっきができるめっき装置を提供
することを目的とする。DISCLOSURE OF THE INVENTION The present invention has been made in view of the above points, and it is possible to reduce the depth of a plating tank by flowing a plating solution in parallel to a plating surface of a substrate to be plated. The relative speed between the substrate to be plated and the plating solution is made uniform, and the state of adsorption of the additive as a plating inhibitor or accelerator can be made uniform over the entire surface of the substrate to be plated. It is an object of the present invention to provide a plating apparatus which has a good embedding property of metal plating into a metal plate and can perform metal plating with a uniform film thickness.
【０００８】[0008]
【課題を解決するための手段】上記課題を解決するため
請求項１に記載の発明は、めっき槽を具備し、該めっき
槽で被めっき基板のめっき面にめっき液を接触させて金
属めっきを施すめっき装置において、めっき槽は、被め
っき基板のめっき面を下向きにして配置し、該被めっき
基板のめっき面の下方に偏平なめっき液室を設けると共
に、該めっき液室にめっき液を流入させるめっき液流入
口と該めっき液室からめっき液を流出させるめっき液流
出口を前記被めっき基板の外径より外側に該被めっき基
板を挟んで対向して配置し、該めっき液室を流れるめっ
き液が被めっき基板のめっき面に接触しながら平行に流
れるように構成されていることを特徴とする。In order to solve the above problems, the invention according to claim 1 is provided with a plating tank, and a plating solution is brought into contact with a plating surface of a substrate to be plated in the plating tank to perform metal plating. In the plating apparatus to be applied, the plating tank is disposed with the plating surface of the substrate to be plated facing downward, a flat plating solution chamber is provided below the plating surface of the substrate to be plated, and the plating solution flows into the plating solution chamber. A plating solution inflow port and a plating solution outflow port through which a plating solution flows out from the plating solution chamber are disposed outside the outer diameter of the substrate to be plated with the plating substrate interposed therebetween, and flow through the plating solution chamber. The plating liquid is configured to flow in parallel while contacting the plating surface of the substrate to be plated.
【０００９】上記のように、被めっき基板のめっき面の
下方に偏平なめっき液室を設けると共に、該めっき液室
にめっき液を流入させるめっき液流入口と該めっき液室
からめっき液を流出させるめっき液流出口を被めっき基
板の外径より外側に該被めっき基板を挟んで対向して配
置することにより、該めっき液室を流れるめっき液は被
めっき基板のめっき面に接触しながら平行に流れるの
で、被めっき基板のめっき面の全面に亘ってめっき面と
めっき液との相対速度が均一となり、めっき液中の添加
剤が一様に吸着され、被めっき基板の微細な孔や溝への
めっきの埋め込み性が改善されると共に、均一な膜厚の
めっきができる。As described above, a flat plating solution chamber is provided below the plating surface of the substrate to be plated, and a plating solution inlet for allowing the plating solution to flow into the plating solution chamber and a plating solution flowing out of the plating solution chamber. By disposing the plating solution outlet to be disposed outside the outer diameter of the substrate to be plated with the substrate to be plated interposed therebetween, the plating solution flowing through the plating solution chamber is parallel while contacting the plating surface of the substrate to be plated. Therefore, the relative speed between the plating surface and the plating solution becomes uniform over the entire surface of the plating surface of the substrate to be plated, the additives in the plating solution are uniformly adsorbed, and fine holes and grooves in the substrate to be plated are formed. The embedding property of the plating into the plating is improved, and plating with a uniform film thickness can be performed.
【００１０】また、請求項２に記載の発明は、請求項１
に記載のめっき装置において、めっき槽は、めっき液室
の下方にイオン交換膜又は多孔性中性隔膜を介して偏平
な陽極室を設けると共に、該陽極室の底部に被めっき基
板と対向する陽極電極を配置し、該陽極室にめっき液又
は別の導電性液を流すように構成されていることを特徴
とする。[0010] The invention described in claim 2 is the same as the claim 1.
In the plating apparatus described in the above, the plating tank is provided with a flat anode chamber below the plating solution chamber via an ion exchange membrane or a porous neutral diaphragm, and the anode facing the substrate to be plated at the bottom of the anode chamber An electrode is arranged, and a plating solution or another conductive solution is caused to flow through the anode chamber.
【００１１】上記のようにめっき液導入室の下方にイオ
ン交換膜又は多孔性中性隔膜を介して陽極室を設け、該
陽極室にめっき液又は別の導電性液を流すことにより、
陽極電極表面でのめっき液中の添加剤の酸化分解が防止
されめっき液中の添加剤の異常消耗を防ぐと共に、発生
した酸素ガスはイオン交換膜又は多孔性中性隔膜で阻止
され被めっき基板に達することがないから、被めっき基
板の表面の微細な孔や溝にめっき欠陥ができることを防
止できる。As described above, an anode chamber is provided below the plating solution introduction chamber via an ion exchange membrane or a porous neutral diaphragm, and a plating solution or another conductive solution is caused to flow through the anode chamber.
The oxidative decomposition of the additives in the plating solution on the anode electrode surface is prevented, preventing the abnormal consumption of the additives in the plating solution, and the generated oxygen gas is blocked by the ion exchange membrane or the porous neutral diaphragm and the substrate to be plated Therefore, it is possible to prevent the formation of plating defects in fine holes and grooves on the surface of the substrate to be plated.
【００１２】また、請求項３に記載の発明は、請求項１
又は２に記載のめっき装置において、めっき槽は、被め
っき基板を該めっき槽内でめっき面を下向きにした状態
で回転させる被めっき基板回転機構を具備することを特
徴とする。Further, the invention described in claim 3 is the first invention.
Alternatively, in the plating apparatus described in 2, the plating tank includes a substrate rotation mechanism that rotates the substrate to be plated in the plating tank with the plating surface facing downward.
【００１３】上記のようにめっき液を被めっき基板のめ
っき面に平行に流すことにより、めっき液流れの上流側
と下流側ではめっき膜の膜厚に差が生じるが、上記のよ
うに被めっき基板回転機構を設け、めっき中に被めっき
基板をそのめっき面を下向きにした状態で回転させるこ
とにより、めっき面は均一に上流側と下流側の間を移動
することになり、均一な膜厚のめっき膜を形成できる。
また、めっき終了後、被めっき基板をめっき液面から引
き上げ、高速回転させることにより、めっき槽内で付着
しためっき液を振り切ることができ、めっき液でめっき
槽の外部が汚染されることが少なくなる。By flowing the plating solution parallel to the plating surface of the substrate to be plated as described above, a difference occurs in the thickness of the plating film between the upstream side and the downstream side of the plating solution flow. By providing a substrate rotation mechanism and rotating the substrate to be plated with the plating surface facing downward during plating, the plating surface moves uniformly between the upstream side and the downstream side, and a uniform film thickness Can be formed.
Also, after the plating is completed, the substrate to be plated is pulled up from the plating solution surface and rotated at a high speed, so that the plating solution attached in the plating bath can be shaken off, and the outside of the plating bath is less contaminated by the plating solution. Become.
【００１４】また、請求項４に記載の発明は、請求項２
又は３に記載のめっき装置において、めっき中、被めっ
き基板を１〜１０ｒｐｍの回転速度で回転させることを
特徴とする。The invention described in claim 4 is the same as the claim 2.
Alternatively, in the plating apparatus described in 3, the substrate to be plated is rotated at a rotation speed of 1 to 10 rpm during plating.
【００１５】上記のように被めっき基板の回転速度を１
〜１０ｒｐｍにすることにより、めっき液室を流れるめ
っき液の流れに悪影響を与えることなく（めっき面とめ
っき液の均一な相対速度を乱すことなく）、且つ均一な
膜厚のめっき膜を形成することができる。As described above, the rotation speed of the substrate to be plated is set to 1
By setting to 10 to 10 rpm, a plating film having a uniform film thickness is formed without adversely affecting the flow of the plating solution flowing through the plating solution chamber (without disturbing the uniform relative speed between the plating surface and the plating solution). be able to.
【００１６】また、請求項４に記載の発明は、請求項１
乃至４のいずれか１項に記載のめっき装置において、め
っき槽を複数台重ねて配置しためっきステージを具備す
ることを特徴とする。The invention described in claim 4 is the first invention.
5. The plating apparatus according to any one of items 4 to 4, further comprising a plating stage in which a plurality of plating tanks are stacked and arranged.
【００１７】上記のようにめっきステージに複数台のめ
っき槽を重ねて配置することにより、めっき装置全体の
平面配置構成を小さくでき、設置スペースの省スペース
化を図ることができる。By arranging a plurality of plating tanks on the plating stage as described above, the planar arrangement of the entire plating apparatus can be reduced, and the installation space can be saved.
【００１８】[0018]
【発明の実施の形態】以下、本発明の実施の形態例を図
面に基づいて説明する。図２は本発明に係るめっき装置
のめっき槽の構成例を示す図である。図示するように、
本めっき槽１０はめっき槽本体１１内に半導体ウエハ等
の被めっき基板１３を保持するための基板保持体１２が
収容されている。該基板保持体１２は基板保持部１２−
１とシャフト部１２−２からなり、該シャフト部１２−
２は円筒状のガイド部材１４の内壁に軸受１５、１５を
介して回転自在に支持されている。そして該ガイド部材
１４と基板保持体１２はめっき槽本体１１の頂部に設け
られたシリンダ１６により上下に所定ストロークで昇降
できるようになっている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 2 is a diagram showing a configuration example of a plating tank of the plating apparatus according to the present invention. As shown
In the main plating tank 10, a substrate holder 12 for holding a substrate 13 to be plated such as a semiconductor wafer is accommodated in a plating tank main body 11. The substrate holder 12 includes a substrate holder 12-
1 and a shaft portion 12-2.
2 is rotatably supported on the inner wall of a cylindrical guide member 14 via bearings 15 and 15. The guide member 14 and the substrate holder 12 can be moved up and down by a predetermined stroke by a cylinder 16 provided at the top of the plating tank main body 11.
【００１９】また、基板保持体１２はガイド部材１４の
内部上方に設けられたモータ１８により、シャフト部１
２−２を介して矢印Ａ方向に回転できるようになってい
る。また、基板保持体１２の内部には基板押え部１７−
１及びシャフト部１７−２からなる基板押え部材１７を
収納する空間Ｃが設けられており、該基板押え部材１７
は基板保持体１２のシャフト部１２−２内の上部に設け
られたシリンダ１９により上下に所定ストロークで昇降
できるようになっている。The substrate holder 12 is driven by a motor 18 provided above the inside of the guide member 14 so that the shaft 1
It can be rotated in the direction of arrow A via 2-2. Further, the substrate holding portion 17 has a substrate holding portion 17-.
A space C is provided for accommodating the substrate pressing member 17 composed of the shaft 1 and the shaft portion 17-2.
Can be moved up and down by a predetermined stroke by a cylinder 19 provided at an upper part in the shaft portion 12-2 of the substrate holder 12.
【００２０】基板保持体１２の基板保持部１２−１の下
方には空間Ｃに連通する開口１２−１ａが設けられ、該
開口１２−１ａの上部には、図４に示すように被めっき
基板１３の縁部が載置される段部１２−１ｂが形成され
ている。該段部１２−１ｂに被めっき基板１３の縁部を
載置し、被めっき基板１３の上面を基板押え部材１７の
基板押え部１７−１で押圧することにより、被めっき基
板１３の縁部は基板押え部１７−１と段部１２−１ｂの
間に挟持される。そして被めっき基板１３の下面（めっ
き面）は開口１２−１ａに露出する。なお、図４は図２
のＢ部分の拡大図である。An opening 12-1a communicating with the space C is provided below the substrate holding portion 12-1 of the substrate holding body 12, and above the opening 12-1a, as shown in FIG. A step portion 12-1b on which the edge portion 13 is placed is formed. The edge of the substrate 13 is placed on the stepped portion 12-1b, and the upper surface of the substrate 13 is pressed by the substrate pressing portion 17-1 of the substrate pressing member 17 so that the edge of the substrate 13 is pressed. Is sandwiched between the board holding part 17-1 and the step part 12-1b. Then, the lower surface (plating surface) of the substrate 13 is exposed to the opening 12-1a. FIG. 4 is the same as FIG.
It is an enlarged view of B part of FIG.
【００２１】めっき槽本体１１の基板保持部１２−１の
下方、即ち開口１２−１ａに露出する被めっき基板１３
のめっき面の下方にはめっき液Ｑが流れるめっき液室２
０が設けられている。また、めっき槽本体１１の１側部
にはめっき液供給ヘッダ２１が設けられ、該めっき液供
給ヘッダ２１には前記めっき液室２０に連通するめっき
液流入口２２が設けられいる。また、めっき槽本体１１
の上記めっき液供給ヘッダ２１の反対側にはめっき液Ｑ
が流出するめっき液流出口２３が設けられ、更に該めっ
き液流出口２３から流出する（めっき液室２０からオー
バーフローする）めっき液Ｑを捕集する捕集樋２４が設
けられている。The substrate 13 to be plated is exposed below the substrate holding portion 12-1 of the plating tank main body 11, that is, in the opening 12-1a.
Plating solution chamber 2 through which plating solution Q flows below the plating surface of
0 is provided. A plating solution supply header 21 is provided on one side of the plating tank main body 11, and the plating solution supply header 21 is provided with a plating solution inflow port 22 communicating with the plating solution chamber 20. Also, the plating tank body 11
On the opposite side of the plating solution supply header 21
Is provided, and a collecting trough 24 for collecting the plating solution Q flowing out of the plating solution outlet 23 (overflowing from the plating solution chamber 20) is provided.
【００２２】捕集樋２４で回収されためっき液Ｑはめっ
き液タンク２５に戻るようになっている。めっき液タン
ク２５内のめっき液Ｑはポンプ２６によりめっき液供給
ヘッダ２１に送られ、該めっき液流入口２２からめっき
槽本体１１のめっき液室２０に流れ込み、該めっき液室
２０内を被めっき基板１３のめっき面に接触しながら該
めっき面と平行に流れ、めっき液流出口２３から捕集樋
２４に流れ込むようになっている。即ち、めっき液Ｑは
めっき槽本体１１のめっき液室２０とめっき液タンク２
５の間を循環するようになっている。The plating solution Q collected by the collecting gutter 24 returns to the plating solution tank 25. The plating solution Q in the plating solution tank 25 is sent to the plating solution supply header 21 by the pump 26, flows into the plating solution chamber 20 of the plating tank main body 11 from the plating solution inlet 22, and the inside of the plating solution chamber 20 is plated. It flows parallel to the plating surface while contacting the plating surface of the substrate 13, and flows into the collecting gutter 24 from the plating solution outlet 23. That is, the plating solution Q is supplied to the plating solution chamber 20 of the plating tank body 11 and the plating solution tank 2.
It circulates between five.
【００２３】めっき液室２０のめっき液面レベルＬQは
被めっき基板１３のめっき面レベルＬWより若干ΔＬだ
け高くなっており、被めっき基板１３のめっき面の全面
はめっき液Ｑに接触している。図５はめっき液室２０内
のめっき液Ｑの流れと被めっき基板１３の関係を示す図
である。めっき液流入口２２とめっき液流出口２３は被
めっき基板１３の外径より外側に、被めっき基板１３を
挟んで対向して配置され、めっき液室２０を流れるめっ
き液Ｑは被めっき基板１３のめっき面に接触しながら平
行に流れる。[0023] Plating liquid level L Q of the plating solution chamber 20 is higher only slightly ΔL than the plating surface level L W to be plated substrate 13, the entire surface of the plated surface of the plated substrate 13 is in contact with the plating solution Q ing. FIG. 5 is a diagram showing the relationship between the flow of the plating solution Q in the plating solution chamber 20 and the substrate 13 to be plated. The plating solution inflow port 22 and the plating solution outflow port 23 are disposed outside the outer diameter of the substrate 13 to be plated with the plating solution substrate 13 interposed therebetween. Flows in parallel while contacting the plating surface.
【００２４】基板保持体１２の基板保持部１２−１の段
部１２−１ｂは被めっき基板１３の導電部と電気的に導
通する電気接点３０が設けられ（図４参照）、該電気接
点３０はブラシ２７を介して外部のめっき電源（図示せ
ず）の陰極に接続されるようになっている。また、めっ
き槽本体１１のめっき液室２０の底部には被めっき基板
１３と対向して陽極電極２８が設けられ、該陽極電極２
８はめっき電源の陽極に接続されるようになっている。
めっき槽本体１１の壁面の所定位置には例えばロボット
アーム等の基板搬出入治具で被めっき基板１３を出し入
れする搬出入スリット２９が設けられている。The step 12-1b of the substrate holder 12-1 of the substrate holder 12 is provided with an electrical contact 30 electrically connected to the conductive portion of the substrate 13 to be plated (see FIG. 4). Are connected to a cathode of an external plating power source (not shown) via a brush 27. An anode electrode 28 is provided at the bottom of the plating solution chamber 20 of the plating tank body 11 so as to face the substrate 13 to be plated.
Reference numeral 8 is connected to the anode of the plating power supply.
A loading / unloading slit 29 is provided at a predetermined position on the wall surface of the plating tank main body 11 for loading / unloading the substrate 13 with a substrate loading / unloading jig such as a robot arm.
【００２５】上記構成のめっき装置において、めっきを
行うに際しては、先ずシリンダ１６を作動させ、基板保
持体１２をガイド部材１４ごと所定量（基板保持部１２
−１に保持された被めっき基板１３が搬出入スリット２
９に対応する位置まで）上昇させるとともに、シリンダ
１９を作動させて基板押え部材１７を所定量（基板押え
部１７−１が搬出入スリット２９の上部に達する位置ま
で）上昇させる。この状態でロボットアーム等の基板搬
出入治具で被めっき基板１３を基板保持体１２の空間Ｃ
に搬入し、該被めっき基板１３をそのめっき面が下向き
になるように段部１２−１ｂに載置する。この状態でシ
リンダ１９を作動させて基板押え部１７−１の下面が被
めっき基板１３の上面に当接するまで下降させ、基板押
え部１７−１と段部１２−１ｂの間に被めっき基板１３
の縁部を挟持する。In the plating apparatus having the above structure, when plating is performed, first, the cylinder 16 is operated to move the substrate holder 12 together with the guide member 14 by a predetermined amount (the substrate holder 12
−1 is held in the loading / unloading slit 2
9) and the cylinder 19 is operated to raise the substrate pressing member 17 by a predetermined amount (to a position where the substrate pressing portion 17-1 reaches the upper portion of the carry-in / out slit 29). In this state, the substrate 13 to be plated is moved to the space C
The substrate 13 is placed on the step 12-1b such that the plating surface faces downward. In this state, the cylinder 19 is operated and lowered until the lower surface of the substrate pressing portion 17-1 comes into contact with the upper surface of the substrate 13 to be plated.
Pinch the edge of.
【００２６】この状態でシリンダ１６を作動させ、基板
保持体１２をガイド部材１４ごと被めっき基板１３のめ
っき面がめっき液室２０を流れるめっき液に接触するま
で（めっき面レベルＬQより上記ΔＬだけ低い位置ま
で）下降させる。この時、モータ１８を起動し、基板保
持体１２と被めっき基板１３を低速で回転させながら下
降させる。めっき液室２０には上記のようにめっき液タ
ンク２５からポンプ２６を介してめっき液Ｑが供給され
循環しており、この状態で陽極電極２８と上記電気接点
３０の間にめっき電源から所定の電圧を印加すると陽極
電極２８から被めっき基板１３へとめっき電流が流れ、
被めっき基板１３のめっき面にめっき膜が形成される。[0026] actuate the cylinder 16 in this state, the substrate holder 12 to the plating surface of the guide member 14 by the plated substrate 13 is in contact with the plating liquid flowing through the plating solution chamber 20 (plated surface level L Q than the ΔL Only to the lower position). At this time, the motor 18 is started, and the substrate holder 12 and the substrate 13 are lowered while rotating at a low speed. The plating solution Q is supplied from the plating solution tank 25 via the pump 26 to the plating solution chamber 20 via the pump 26 as described above, and is circulated. When a voltage is applied, a plating current flows from the anode electrode 28 to the substrate 13 to be plated,
A plating film is formed on the plating surface of the substrate 13 to be plated.
【００２７】上記めっき中はモータ１８を運転し、基板
保持体１２と被めっき基板１３を低速（１〜１０ｒｐ
ｍ）で回転させる。被めっき基板１３をこの低速回転で
回転させることにより、めっき液室２０内を流れるめっ
き液Ｑの流れ（被めっき基板１３のめっき面に対する平
行な流れ）に悪影響を与えることなく（めっき面とめっ
き液との均一な相対速度を乱すことなく）、且つめっき
液流れの上流側と下流側とで発生するめっき膜厚さの差
を解消し、被めっき基板１３のめっき面に均一な膜厚の
めっき膜を形成することができる。During the plating, the motor 18 is operated to rotate the substrate holder 12 and the substrate 13 at a low speed (1 to 10 rpm).
Rotate in m). By rotating the substrate 13 at this low speed rotation, the flow of the plating solution Q flowing in the plating solution chamber 20 (flow parallel to the plating surface of the substrate 13) is not adversely affected (the plating surface and the plating Without disturbing the uniform relative speed with the plating solution), and eliminating the difference in plating film thickness between the upstream side and the downstream side of the plating solution flow, and providing a uniform film thickness on the plating surface of the substrate 13 to be plated. A plating film can be formed.
【００２８】めっきが終了するとシリンダ１６を作動さ
せ、基板保持体１２と被めっき基板１３を上昇させ、基
板保持部１２−１の下面がめっき液レベルＬQより上に
なったら、モータ１８を高速で回転させ、遠心力で被め
っき基板のめっき面及び基板保持部１２−１の下面に付
着しためっき液を振り切る。めっき液を振り切ったら、
被めっき基板１３を搬出入スリット２９の位置まで上昇
させる。ここでシリンダ１９を作動させて、基板押え部
１７−１を上昇させると被めっき基板１３は解放され、
基板保持部１２−１の段部１２−１ｂに載置された状態
となる。この状態でロボットアーム等の基板搬出入治具
を搬出入スリット２９から、基板保持体１２の空間Ｃに
侵入させ、被めっき基板１３をピックアップして外部に
搬出する。[0028] actuating the the plating is completed cylinder 16 is raised to be plated substrate 13 and the substrate holder 12, when the lower surface of the substrate holding portion 12-1 becomes above the plating solution level L Q, high speed motor 18 To shake off the plating solution adhered to the plating surface of the substrate to be plated and the lower surface of the substrate holding unit 12-1 by centrifugal force. After shaking off the plating solution,
The substrate to be plated 13 is raised to the position of the carry-in / out slit 29. Here, when the cylinder 19 is operated to raise the substrate pressing portion 17-1, the substrate 13 to be plated is released,
The substrate is placed on the step 12-1b of the substrate holding unit 12-1. In this state, a substrate loading / unloading jig such as a robot arm is made to enter the space C of the substrate holder 12 through the loading / unloading slit 29, and the substrate 13 to be plated is picked up and carried out.
【００２９】図３は本発明に係るめっき装置のめっき槽
の他の構成例を示す図である。図３において、基板保持
体１２から上部は図２と同一であるのでその図示は省略
する。本めっき槽１０はめっき液流入口２２の下方にイ
オン交換膜又は多孔性中性隔膜３４を介してめっき液又
は導電性液体Ｑ’を導入する陽極室３１を設け、該陽極
室３１の底部に陽極電極２８を設けている。液タンク３
３内のめっき液又は導電性液体Ｑ’はポンプ３２によ
り、陽極室３１に導入され、陽極室３１内から流出する
めっき液又は導電性液体Ｑ’は液タンク３３に戻るよう
になっている。即ち、液タンク３３内のめっき液又は導
電性液体Ｑ’は陽極室３１と液タンク３３の間を循環す
るようになっている。FIG. 3 is a view showing another configuration example of the plating tank of the plating apparatus according to the present invention. In FIG. 3, the upper part from the substrate holder 12 is the same as that in FIG. The plating bath 10 is provided with an anode chamber 31 for introducing a plating solution or a conductive liquid Q ′ through an ion exchange membrane or a porous neutral diaphragm 34 below the plating solution inlet 22, and at the bottom of the anode chamber 31. An anode electrode 28 is provided. Liquid tank 3
The plating solution or conductive liquid Q ′ in 3 is introduced into the anode chamber 31 by the pump 32, and the plating solution or conductive liquid Q ′ flowing out of the anode chamber 31 returns to the liquid tank 33. That is, the plating solution or the conductive liquid Q ′ in the liquid tank 33 circulates between the anode chamber 31 and the liquid tank 33.
【００３０】めっき槽１０を上記のようにめっき液流入
口２２の下方にイオン交換膜又は多孔性中性隔膜３４を
介して陽極室３１を設け、めっき液又は導電性液体Ｑ’
を流すことにより、陽極電極２８に不溶解性電極を用い
ても陽極電極２８の表面で添加剤の酸化分解を防止する
ことができると共に、発生する酸素ガスはイオン交換膜
又は多孔性中性隔膜３４により阻止され被めっき基板１
３のめっき面に達しない。これによりめっき液Ｑ中の添
加剤の異常消耗を防ぎ、酸素ガスにより被めっき基板の
めっき面の微細な孔や溝及び表面にめっき欠陥が発生す
ることを防止できる。As described above, the plating chamber 10 is provided with the anode chamber 31 below the plating solution inlet 22 through the ion exchange membrane or the porous neutral diaphragm 34, and the plating solution or the conductive liquid Q 'is provided.
By flowing the gas, it is possible to prevent the oxidative decomposition of the additive on the surface of the anode electrode 28 even if an insoluble electrode is used as the anode electrode 28, and the generated oxygen gas is an ion exchange membrane or a porous neutral diaphragm. Substrate to be plated 1 blocked by 34
The plating surface of No. 3 is not reached. Thereby, abnormal consumption of the additive in the plating solution Q can be prevented, and generation of plating defects in fine holes, grooves and surfaces of the plating surface of the substrate to be plated due to oxygen gas can be prevented.
【００３１】めっき装置を上記構成にすることにより、
めっき液室２０のめっき液Ｑの流れは被めっき基板１３
のめっき面に対して平行な流れとなるから、従来のめっ
き液噴流を被めっき基板に垂直に当てるフェースダウン
方式のめっき槽に比較して、めっき槽１０の深さ方向の
寸法を小さくできる。従って、めっき槽１０を複数台重
ねて配置することが可能となる。By making the plating apparatus have the above configuration,
The flow of the plating solution Q in the plating solution chamber 20 depends on the substrate 13 to be plated.
Therefore, the size of the plating tank 10 in the depth direction can be reduced as compared with a conventional plating tank of a face-down type in which a plating solution jet is vertically applied to a substrate to be plated. Therefore, it becomes possible to arrange a plurality of plating tanks 10 in a stacked manner.
【００３２】図６は本発明に係る上記構成のめっき槽１
０を用いためっき装置の全体構成例を示す図で、図６
（ａ）は平面構成を、図６（ｂ）は側面構成をそれぞれ
示す。図６に示すように、めっき装置４０はロード部４
１、アンロード部４２、洗浄乾燥槽４３、ロードステー
ジ４４、粗水洗槽４５、めっきステージ４６、前処理槽
４７、第１ロボット４８及び第２ロボット４９を具備す
る構成である。各めっきステージ４６には図２に示す構
成のめっき槽１０を２層重ねに配置している。即ち、め
っき装置全体として、計４台のめっき槽１０が配置され
ている。これはめっき槽１０が図１に示す従来のめっき
槽１００に比較して深さ寸法を小さくすることができる
から、実現可能となる。FIG. 6 shows a plating tank 1 having the above structure according to the present invention.
FIG. 6 is a diagram showing an example of the overall configuration of a plating apparatus using a No. 0;
6A shows a plan configuration, and FIG. 6B shows a side configuration. As shown in FIG. 6, the plating apparatus 40 is
1, an unloading section 42, a washing / drying tank 43, a load stage 44, a coarse water washing tank 45, a plating stage 46, a pretreatment tank 47, a first robot 48, and a second robot 49. Each of the plating stages 46 is provided with two layers of the plating bath 10 having the configuration shown in FIG. That is, a total of four plating tanks 10 are arranged in the entire plating apparatus. This is feasible because the plating tank 10 can have a smaller depth dimension than the conventional plating tank 100 shown in FIG.
【００３３】上記構成のめっき装置４０において、ロー
ド部４１に載置されたカセットに収納された被めっき基
板１３は第１ロボットで１枚ずつ取り出され、ロードス
テージ４４に移送される。ロードステージ４４に移送さ
れた被めっき基板１３は第２ロボット４９により、前処
理槽４７に移送され、該前処理槽４７で前処理を施され
る。前処理の施された被めっき基板１３は第２ロボット
４９でめっきステージ４６のめっき槽１０に移送され、
めっき処理が施される。めっき処理の終了した被めっき
基板１３は第２ロボット４９で粗水洗槽４５に移送さ
れ、粗水洗浄処理が施される。該粗水洗浄処理が終了し
た被めっき基板１３は更に第１ロボット４８で洗浄乾燥
槽４３に移送され、洗浄処理され乾燥された後、アンロ
ード部４２に移送される。In the plating apparatus 40 having the above-described structure, the substrates 13 to be plated stored in the cassette mounted on the load section 41 are taken out one by one by the first robot and transferred to the load stage 44. The substrate 13 to be plated transferred to the load stage 44 is transferred to a pretreatment tank 47 by the second robot 49 and subjected to pretreatment in the pretreatment tank 47. The preprocessed substrate 13 is transferred to the plating tank 10 of the plating stage 46 by the second robot 49,
A plating process is performed. The plating target substrate 13 after the plating process is transferred to the coarse water washing tank 45 by the second robot 49 and subjected to the coarse water cleaning process. The substrate 13 to be plated after the rough water cleaning process is further transferred to the cleaning and drying tank 43 by the first robot 48, washed and dried, and then transferred to the unloading unit 42.
【００３４】上記のように、本発明に係るめっき槽１０
は被めっき基板１３のめっき面の下方にめっき液Ｑが該
めっき面に対して平行に流れるめっき液室２０を設ける
構成としたので、めっき槽１０の深さ寸法が小さくで
き、めっき槽１０を複数台（図では２台）重ねて配置し
ても、従来のめっき液噴流を被めっき基板に垂直に当て
るフェースダウン方式のめっき槽の１台分の深さ寸法に
することが可能であるから、めっき装置全体として設置
スペースが小さくなる。即ち、４台のめっき槽を配置す
るめっき装置では、従来のめっき槽を用いると図７に示
すように、各めっきステージ４６に１台のめっき槽しか
配置することができないから、めっきステージ４６の配
置面積が図６の場合の２倍となる。As described above, the plating tank 10 according to the present invention
Since the plating solution chamber 20 in which the plating solution Q flows in parallel with the plating surface is provided below the plating surface of the substrate 13 to be plated, the depth dimension of the plating bath 10 can be reduced. Even if a plurality of units (two units in the figure) are arranged one on top of the other, it is possible to reduce the depth to the depth of one face-down type plating tank in which a conventional plating solution jet is applied vertically to the substrate to be plated. In addition, the installation space is reduced as a whole plating apparatus. That is, in a plating apparatus in which four plating tanks are arranged, if a conventional plating tank is used, only one plating tank can be arranged in each plating stage 46 as shown in FIG. The layout area is twice as large as that of FIG.
【００３５】なお、上記実施形態例では電解めっきの例
を説明したが、本発明に係るめっき装置は電解めっきに
限定されるものではなく、無電解めっきでも良いことは
当然である。また、めっき液Ｑとしては、銅めっきを行
う硫酸銅めっき液の他、他の金属めっきを行うめっき液
も使用可能である。Although the example of the electrolytic plating has been described in the embodiment, the plating apparatus according to the present invention is not limited to the electrolytic plating. As the plating solution Q, a plating solution for performing other metal plating can be used in addition to a copper sulfate plating solution for performing copper plating.
【００３６】[0036]
【発明の効果】以上説明したように請求項１に記載の発
明によれば、被めっき基板のめっき面の下方に偏平なめ
っき液室を設けると共に、該めっき液室にめっき液を流
入させるめっき液流入口と該めっき液室からめっき液を
流出させるめっき液流出口を被めっき基板の外径より外
側に該被めっき基板を挟んで対向して配置することによ
り、該めっき液室を流れるめっき液は被めっき基板のめ
っき面に接触しながら平行に流れるので、被めっき基板
のめっき面の全面に亘ってめっき面とめっき液との相対
速度が均一となり、めっき液中の添加剤が一様に吸着さ
れ、被めっき基板の微細な孔や溝へのめっきの埋め込み
性が改善されると共に、均一な膜厚のめっきができる。As described above, according to the first aspect of the present invention, a flat plating solution chamber is provided below the plating surface of the substrate to be plated, and the plating solution flows into the plating solution chamber. By arranging a solution inlet and a plating solution outlet for allowing the plating solution to flow out of the plating solution chamber outside the outer diameter of the substrate to be plated, with the substrate to be plated interposed therebetween, the plating flowing through the plating solution chamber is performed. Since the solution flows in parallel while contacting the plating surface of the substrate to be plated, the relative speed between the plating surface and the plating solution is uniform over the entire surface of the plating surface of the substrate to be plated, and the additive in the plating solution is uniform. This improves the embedding property of the plating into the fine holes and grooves of the substrate to be plated, and enables plating with a uniform film thickness.
【００３７】また、めっき液の流れを被めっき基板の下
方にめっき面と平行な流れとするので、めっき槽の深さ
寸法を小さくできる。Further, since the flow of the plating solution is a flow parallel to the plating surface below the substrate to be plated, the depth of the plating bath can be reduced.
【００３８】また、請求項２に記載の発明によれば、め
っき液導入室の下方にイオン交換膜又は多孔性中性隔膜
を介して陽極室を設け、該陽極室にめっき液又は別の導
電性液を流すことにより、陽極電極表面でのめっき液中
の添加剤の酸化分解が防止されめっき液中の添加剤の異
常消耗を防ぐと共に、発生した酸素ガスはイオン交換膜
又は多孔性中性隔膜で阻止され被めっき基板に達するこ
とがないから、被めっき基板の表面の微細な孔や溝にめ
っき欠陥ができることを防止できる。According to the second aspect of the present invention, an anode chamber is provided below the plating solution introducing chamber via an ion exchange membrane or a porous neutral diaphragm, and the plating solution or another conductive material is provided in the anode chamber. By flowing the acidic solution, the oxidative decomposition of the additive in the plating solution on the anode electrode surface is prevented, and the abnormal consumption of the additive in the plating solution is prevented, and the generated oxygen gas is supplied to the ion exchange membrane or porous neutral. Since it is blocked by the diaphragm and does not reach the substrate to be plated, it is possible to prevent the formation of plating defects in minute holes and grooves on the surface of the substrate to be plated.
【００３９】また、請求項３に記載の発明によれば、被
めっき基板回転機構を設けることにより、めっき中に被
めっき基板をそのめっき面を下向きにした状態で低速回
転させることができ、均一な膜厚のめっき膜を形成でき
る。また、めっき終了後、被めっき基板をめっき液面か
ら引き上げ、高速回転させることにより、めっき槽内で
付着しためっき液を振り切ることができ、めっき液でめ
っき槽の外部が汚染されることが少なくなる。According to the third aspect of the present invention, by providing the substrate rotating mechanism, the substrate to be plated can be rotated at a low speed with the plating surface facing downward during plating, and the uniformity can be obtained. A plating film having an appropriate thickness can be formed. Also, after the plating is completed, the substrate to be plated is pulled up from the plating solution surface and rotated at a high speed, so that the plating solution attached in the plating bath can be shaken off, and the outside of the plating bath is less contaminated by the plating solution. Become.
【００４０】また、請求項４に記載の発明によれば、被
めっき基板をめっき中、１〜１０ｒｐｍの低速回転で回
転させるので、めっき液室を流れるめっき液の流れに悪
影響を与えることなく、且つ均一な膜厚のめっき膜を形
成することができる。According to the fourth aspect of the present invention, since the substrate to be plated is rotated at a low speed of 1 to 10 rpm during plating, it does not adversely affect the flow of the plating solution flowing through the plating solution chamber. In addition, a plating film having a uniform thickness can be formed.
【００４１】また、請求項５に記載の発明によれば、め
っきステージに複数台のめっき槽を重ねて配置すること
により、めっき装置全体の平面配置構成を小さくでき、
設置スペースの省スペース化を図ることができる。According to the fifth aspect of the present invention, by arranging a plurality of plating tanks on the plating stage in a stacked manner, the planar arrangement of the entire plating apparatus can be reduced.
Installation space can be saved.
【図１】従来のフェースダウン方式のめっき槽の構成例
を示す図である。FIG. 1 is a diagram showing a configuration example of a conventional face-down plating bath.
【図２】本発明に係るめっき装置のめっき槽の構成例を
示す図である。FIG. 2 is a diagram showing a configuration example of a plating tank of a plating apparatus according to the present invention.
【図３】本発明に係るめっき装置のめっき槽の構成例を
示す図である。FIG. 3 is a diagram showing a configuration example of a plating tank of a plating apparatus according to the present invention.
【図４】図２のＢ部分の拡大図である。FIG. 4 is an enlarged view of a portion B in FIG. 2;
【図５】本発明に係るめっき槽のめっき液室内のめっき
液の流れと被めっき基板の関係を示す図である。FIG. 5 is a diagram showing a relationship between a flow of a plating solution in a plating solution chamber of a plating tank and a substrate to be plated according to the present invention.
【図６】本発明に係るめっき装置の全体構成を示す図
で、図５（ａ）はその平面図、図５（ｂ）はその側面図
である。FIGS. 6A and 6B are diagrams showing the overall configuration of a plating apparatus according to the present invention, wherein FIG. 5A is a plan view and FIG. 5B is a side view.
【図７】従来のめっき装置の全体の平面構成を示す図で
ある。FIG. 7 is a view showing an overall plan configuration of a conventional plating apparatus.
１０ めっき槽 １１ めっき槽本体 １２ 基板保持体 １３ 被めっき基板 １４ ガイド部材 １５ 軸受 １６ シリンダ １７ 基板押え部材 １８ モータ １９ シリンダ ２０ めっき液室 ２１ めっき液供給ヘッダ ２２ めっき液流入口 ２３ めっき液流出口 ２４ 捕集樋 ２５ めっき液タンク ２６ ポンプ ２７ ブラシ ２８ 陽極電極 ２９ 搬出入スリット ３０ 電気接点 ３１ 陽極室 ３２ ポンプ ３３ 液タンク ３４ イオン交換膜又は多孔性中性隔膜 ４０ めっき装置 ４１ ロード部 ４２ アンロード部 ４３ 洗浄乾燥槽 ４４ ロードステージ ４５ 粗水洗槽 ４６ めっきステージ ４７ 前処理槽 ４８ 第１ロボット ４９ 第２ロボット DESCRIPTION OF SYMBOLS 10 Plating tank 11 Plating tank main body 12 Substrate holder 13 Substrate to be plated 14 Guide member 15 Bearing 16 Cylinder 17 Substrate holding member 18 Motor 19 Cylinder 20 Plating solution chamber 21 Plating solution supply header 22 Plating solution inflow port 23 Plating solution outflow port 24 Collection gutter 25 Plating solution tank 26 Pump 27 Brush 28 Anode electrode 29 Carry-in / out slit 30 Electrical contact 31 Anode chamber 32 Pump 33 Liquid tank 34 Ion exchange membrane or porous neutral membrane 40 Plating device 41 Loading unit 42 Unloading unit 43 Cleaning / drying tank 44 Load stage 45 Rough water washing tank 46 Plating stage 47 Pretreatment tank 48 First robot 49 Second robot
───────────────────────────────────────────────────── フロントページの続き (72)発明者 三島 浩二 東京都大田区羽田旭町11番１号 株式会社 荏原製作所内 Ｆターム(参考） 4M104 DD52 HH13 HH20 ────────────────────────────────────────────────── ─── Continued on front page (72) Inventor Koji Mishima 11-1 Haneda Asahimachi, Ota-ku, Tokyo F-term in Ebara Corporation (reference) 4M104 DD52 HH13 HH20
Claims (5)
き基板のめっき面にめっき液を接触させて金属めっきを
施すめっき装置において、 前記めっき槽は、前記被めっき基板のめっき面を下向き
にして配置し、該被めっき基板のめっき面の下方に偏平
なめっき液室を設けると共に、該めっき液室にめっき液
を流入させるめっき液流入口と該めっき液室からめっき
液を流出させるめっき液流出口を前記被めっき基板の外
径より外側に該被めっき基板を挟んで対向して配置し、
該めっき液室を流れるめっき液が前記被めっき基板のめ
っき面に接触しながら平行に流れるように構成されてい
ることを特徴とするめっき装置。1. A plating apparatus comprising a plating tank, wherein a plating solution is brought into contact with a plating surface of a substrate to be plated in the plating tank to perform metal plating, wherein the plating tank faces down the plating surface of the substrate to be plated. A plating solution chamber is provided below the plating surface of the substrate to be plated, and a plating solution inlet for allowing a plating solution to flow into the plating solution chamber and a plating solution for allowing the plating solution to flow out of the plating solution chamber. A liquid outlet is disposed facing the outside of the outer diameter of the substrate to be plated with the substrate to be plated interposed therebetween,
A plating apparatus, wherein a plating solution flowing in the plating solution chamber flows in parallel while contacting a plating surface of the substrate to be plated.
又は多孔性中性隔膜を介して偏平な陽極室を設けると共
に、該陽極室の底部に前記被めっき基板と対向する陽極
電極を配置し、該陽極室に前記めっき液又は別の導電性
液を流すように構成されていることを特徴とするめっき
装置。2. The plating apparatus according to claim 1, wherein the plating tank has a flat anode chamber below the plating solution chamber via an ion-exchange membrane or a porous neutral diaphragm, and the anode chamber. A plating apparatus, wherein an anode electrode facing the substrate to be plated is arranged at the bottom of the plating chamber, and the plating solution or another conductive solution is caused to flow through the anode chamber.
いて、 前記めっき槽は、前記被めっき基板を該めっき槽内で前
記めっき面を下向きにした状態で回転させる被めっき基
板回転機構を具備することを特徴とするめっき装置。3. The plating apparatus according to claim 1, wherein the plating tank includes a substrate rotating mechanism that rotates the substrate to be plated in the plating tank with the plating surface facing downward. A plating apparatus.
いて、 前記めっき中、被めっき基板を１〜１０ｒｐｍの回転速
度で回転させることを特徴とするめっき装置。4. The plating apparatus according to claim 2, wherein the substrate to be plated is rotated at a rotation speed of 1 to 10 rpm during the plating.
めっき装置において、 前記めっき槽を複数台重ねて配置しためっきステージを
具備することを特徴とするめっき装置。5. The plating apparatus according to claim 1, further comprising a plating stage in which a plurality of the plating tanks are arranged.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11064987A JP2000256896A (en) | 1999-03-11 | 1999-03-11 | Plating device |
| US09/530,805 US6365017B1 (en) | 1998-09-08 | 1999-09-08 | Substrate plating device |
| PCT/JP1999/004861 WO2000014308A1 (en) | 1998-09-08 | 1999-09-08 | Substrate plating device |
| KR1020007003701A KR100683268B1 (en) | 1998-09-08 | 1999-09-08 | Substrate plating device |
| EP99943206A EP1029954A4 (en) | 1998-09-08 | 1999-09-08 | Substrate plating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11064987A JP2000256896A (en) | 1999-03-11 | 1999-03-11 | Plating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000256896A true JP2000256896A (en) | 2000-09-19 |
Family
ID=13273923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11064987A Pending JP2000256896A (en) | 1998-09-08 | 1999-03-11 | Plating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000256896A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6716330B2 (en) | 2000-10-26 | 2004-04-06 | Ebara Corporation | Electroless plating apparatus and method |
| JP2006206961A (en) * | 2005-01-28 | 2006-08-10 | Hyomen Shori System:Kk | Apparatus and method for continuous copper plating to film-like object |
| US7794573B2 (en) | 2003-12-05 | 2010-09-14 | Semitool, Inc. | Systems and methods for electrochemically processing microfeature workpieces |
| US9556533B2 (en) | 2011-08-19 | 2017-01-31 | Ebara Corporation | Substrate processing apparatus and substrate processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0452296A (en) * | 1990-06-20 | 1992-02-20 | Permelec Electrode Ltd | Copper plating method |
| JPH0610363U (en) * | 1992-07-14 | 1994-02-08 | 新日本製鐵株式会社 | Electrolytic treatment device for metal plates |
| JPH07243098A (en) * | 1994-03-07 | 1995-09-19 | Electroplating Eng Of Japan Co | Wafer plating rack and plating method using the rack |
| JPH10298799A (en) * | 1997-04-24 | 1998-11-10 | Cloth:Kk | Plating device |
| JPH1121692A (en) * | 1997-07-01 | 1999-01-26 | Daiwa Kasei Kenkyusho:Kk | Plating method and plated products |
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1999
- 1999-03-11 JP JP11064987A patent/JP2000256896A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0452296A (en) * | 1990-06-20 | 1992-02-20 | Permelec Electrode Ltd | Copper plating method |
| JPH0610363U (en) * | 1992-07-14 | 1994-02-08 | 新日本製鐵株式会社 | Electrolytic treatment device for metal plates |
| JPH07243098A (en) * | 1994-03-07 | 1995-09-19 | Electroplating Eng Of Japan Co | Wafer plating rack and plating method using the rack |
| JPH10298799A (en) * | 1997-04-24 | 1998-11-10 | Cloth:Kk | Plating device |
| JPH1121692A (en) * | 1997-07-01 | 1999-01-26 | Daiwa Kasei Kenkyusho:Kk | Plating method and plated products |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6716330B2 (en) | 2000-10-26 | 2004-04-06 | Ebara Corporation | Electroless plating apparatus and method |
| US7794573B2 (en) | 2003-12-05 | 2010-09-14 | Semitool, Inc. | Systems and methods for electrochemically processing microfeature workpieces |
| JP2006206961A (en) * | 2005-01-28 | 2006-08-10 | Hyomen Shori System:Kk | Apparatus and method for continuous copper plating to film-like object |
| US9556533B2 (en) | 2011-08-19 | 2017-01-31 | Ebara Corporation | Substrate processing apparatus and substrate processing method |
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