JPH09181026A - Semiconductor device manufacturing apparatus - Google Patents
Semiconductor device manufacturing apparatusInfo
- Publication number
- JPH09181026A JPH09181026A JP33696795A JP33696795A JPH09181026A JP H09181026 A JPH09181026 A JP H09181026A JP 33696795 A JP33696795 A JP 33696795A JP 33696795 A JP33696795 A JP 33696795A JP H09181026 A JPH09181026 A JP H09181026A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- gas
- semiconductor
- semiconductor device
- substrate table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体装置の製
造装置に係り、特にスピンエッチング及び洗浄を行う半
導体装置の製造装置のベルヌイチャック機構の改良に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to improvement of a Bernoulli chuck mechanism of a semiconductor device manufacturing apparatus which performs spin etching and cleaning.
【０００２】[0002]
【従来の技術】半導体装置の製造工程には、半導体基板
の裏側の面（配線層のない面）の不要な膜を除去する工
程がある。その工程において用いられる方法は、半導体
基板１のエッチングを行わない裏側の面等の部分にフォ
トレジストを形成してから、両面について化学ドライエ
ッチングを行うものである。他の方法は、ベルヌイチャ
ック機構を用いてスピンエッチングを行うものである。
以下、後者の方法について説明する。2. Description of the Related Art In the process of manufacturing a semiconductor device, there is a process of removing an unnecessary film on a back surface (a surface without a wiring layer) of a semiconductor substrate. The method used in that step is to form a photoresist on a portion of the semiconductor substrate 1 such as the back surface which is not etched, and then perform chemical dry etching on both surfaces. Another method is to perform spin etching using a Bernoulli chuck mechanism.
The latter method will be described below.
【０００３】図６は、従来の半導体装置の製造装置の構
成を示す断面図である。図７（ａ）は、この半導体装置
の製造装置で処理される半導体基板の平面図で、図７
（ｂ）は図７（ａ）の側面図である。FIG. 6 is a sectional view showing the structure of a conventional semiconductor device manufacturing apparatus. FIG. 7A is a plan view of a semiconductor substrate processed by this semiconductor device manufacturing apparatus.
FIG. 7B is a side view of FIG.
【０００４】図６に示すように、半導体基板（半導体ウ
ェーハ）１がベルヌイチャック機構と呼ばれる機構によ
って保持されている。ベルヌイチャック機構は、噴出口
４を有する半導体基板台２、２ａからなる。この円錐形
の半導体基板台２、２ａの噴出口４から圧縮されたガス
（例えばＮ2 ガス）を外側に向かって噴射させて、半導
体基板１と半導体基板台２との間に放射状にガスを流出
させる。ベルヌイチャック機構では、半導体基板台２、
２ａの中心からの距離に比例して、Ｎ2 ガスの流出する
経路に垂直なその経路の断面の面積が広くなる。この場
合、半導体基板台２ａ付近に負圧が生じる。この負圧に
よって半導体基板１が浮上した状態で吸着され、保持さ
れる。As shown in FIG. 6, a semiconductor substrate (semiconductor wafer) 1 is held by a mechanism called Bernoulli chuck mechanism. The Bernoulli chuck mechanism is composed of semiconductor substrate bases 2 and 2a having a jet port 4. Compressed gas (for example, N 2 gas) is ejected outward from the ejection ports 4 of the conical semiconductor substrate pedestals 2 and 2a to radially radiate the gas between the semiconductor substrate 1 and the semiconductor substrate pedestal 2. Drain. In the Bernoulli chuck mechanism, the semiconductor substrate table 2,
In proportion to the distance from the center of 2a, the area of the cross section of the path perpendicular to the path through which the N 2 gas flows increases. In this case, negative pressure is generated near the semiconductor substrate table 2a. Due to this negative pressure, the semiconductor substrate 1 is adsorbed and held in a floating state.
【０００５】また、このベルヌイチャック機構は保持し
た半導体基板１と共に回転するようになっている。固定
部３は、回転する半導体基板台２、２ａを支えている。
回転するベルヌイチャク機構と固定部３の間は周知のよ
うにガスが漏れないように取り付けられている。上記の
Ｎ2 ガスは図示せぬポンプ等によって矢印５のように吸
入される。尚、ベルヌイチャック機構と固定部３との間
の取り付けには高い気密性は不要である。駆動装置６は
このベルヌイチャック機構を回転させる。例えば、駆動
装置６はモータ７と、モータ７によって回転するギヤ８
とからなる。ベルヌイチャック機構に図示せぬギヤが備
えられている。このベルヌイチャック機構のギヤとギヤ
８を噛み合わせ、モータ７がベルヌイチャック機構を回
転させる。The Bernoulli chuck mechanism rotates together with the held semiconductor substrate 1. The fixed portion 3 supports the rotating semiconductor substrate bases 2 and 2a.
As is well known, a space between the rotating Bernoulli chuck mechanism and the fixed portion 3 is attached so that gas does not leak. The above N 2 gas is sucked in as shown by an arrow 5 by a pump or the like (not shown). It should be noted that the attachment between the Bernoulli chuck mechanism and the fixed portion 3 does not require high airtightness. The drive device 6 rotates this Bernoulli chuck mechanism. For example, the drive device 6 includes a motor 7 and a gear 8 rotated by the motor 7.
Consists of The Bernoulli chuck mechanism is provided with a gear (not shown). The gear of the Bernoulli chuck mechanism is meshed with the gear 8, and the motor 7 rotates the Bernoulli chuck mechanism.
【０００６】次に、この装置の動作を説明する。半導体
基板１の表側の面（配線層のある面）を基板台２、２ａ
に対向させ、半導体基板１を浮上させた状態でベルヌイ
チャック機構に保持する。半導体基板１とベルヌイチャ
ック機構を共に回転させながらエッチング用の薬液を半
導体基板の裏側の面に滴下等によって供給し、ウェット
エッチング（スピンエッチング）を行う。従って、半導
体基板１の裏側の面の不要な膜が除去される。この場
合、噴出口４から噴射されるＮ2 ガスは、薬液の半導体
基板１の表側の面（保持面）への回り込みの防止にも兼
用されている。半導体基板台２、２ａは半導体基板１に
沿って平面状になっている。Next, the operation of this device will be described. The front surface of the semiconductor substrate 1 (the surface on which the wiring layer is provided) is a substrate table 2, 2a.
The semiconductor substrate 1 is held by the Bernoulli chuck mechanism while facing the above. While rotating both the semiconductor substrate 1 and the Bernoulli chuck mechanism, a chemical liquid for etching is supplied to the back surface of the semiconductor substrate by dropping or the like to perform wet etching (spin etching). Therefore, the unnecessary film on the back surface of the semiconductor substrate 1 is removed. In this case, the N 2 gas ejected from the ejection port 4 is also used to prevent the chemical solution from flowing around to the front surface (holding surface) of the semiconductor substrate 1. The semiconductor substrate bases 2 and 2a are flat along the semiconductor substrate 1.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記の
構成においては、次のような問題がある。例えばＮ2 ガ
スの噴出口４のある位置から半導体基板１の周縁部まで
のＮ2 ガスの単位時間当りの流出量（以下、ガスの流量
と記す）は一定である。半導体基板１の裏側の面に対し
てスピンエッチングを行う場合、このＮ2 ガスによる圧
力によって、薬液の保持面への回り込みが防止される。
従って、Ｎ2 ガスの流量を低下させることによって、薬
液を半導体基板１の保持面に回り込ませることが可能で
ある。しかし、薬液の回り込み量を適切な量に調整する
ことは困難であるという問題があった。However, the above structure has the following problems. For example, the outflow amount of N 2 gas per unit time (hereinafter, referred to as gas flow rate) from the position where the N 2 gas ejection port 4 is located to the peripheral portion of the semiconductor substrate 1 is constant. When spin etching is performed on the back surface of the semiconductor substrate 1, the pressure of the N 2 gas prevents the chemical solution from flowing into the holding surface.
Therefore, by reducing the flow rate of the N 2 gas, it is possible to cause the chemical solution to flow around the holding surface of the semiconductor substrate 1. However, there is a problem in that it is difficult to adjust the wraparound amount of the drug solution to an appropriate amount.
【０００８】また、Ｎ2 ガスの流量を低下させた場合、
半導体基板１の保持面へ回り込んだ薬液は半導体基板１
の側面及び保持面の周縁部のみならず中央にまで達する
場合があるという問題があった。When the flow rate of N 2 gas is reduced,
The chemical liquid that has spilled over to the holding surface of the semiconductor substrate 1 is the semiconductor substrate 1.
There is a problem that it may reach not only the side surface and the peripheral portion of the holding surface but also the center.
【０００９】図７（ａ）（ｂ）に示すように、エッチン
グによって必要な膜が全くなくなってしまったエッチン
グむら９、エッチングによって必要な膜が薄くなってし
まったエッチングむら１０となる。また、薬液が飛び散
る場合、エッチング速度が速いので、島状のエッチング
むら１１となる。このように、素子を形成する半導体基
板１の表面に薬液が付着すると不良品となるという問題
があった。As shown in FIGS. 7A and 7B, there are etching unevenness 9 in which the necessary film is completely removed by etching and etching unevenness 10 in which the necessary film is thinned by etching. In addition, when the chemical solution is scattered, the etching rate is high, so that island-shaped etching unevenness 11 is formed. As described above, there is a problem in that the chemical liquid adheres to the surface of the semiconductor substrate 1 on which the device is formed, resulting in a defective product.
【００１０】図８（ａ）は単位時間当りの薬液流量と回
り込み量の関係を示すグラフである。図８（ｂ）は、噴
出口４から噴出されるガスの流量と回り込み量の関係を
を示すグラフである。FIG. 8 (a) is a graph showing the relationship between the chemical liquid flow rate per unit time and the wraparound amount. FIG. 8B is a graph showing the relationship between the flow rate and the wraparound amount of the gas ejected from the ejection port 4.
【００１１】図８（ａ）に示すように、例えばエッチン
グ用の薬液流量が一定値を越えると、薬液の回り込む量
は薬液流量の一時関数、実線１２となる。一方、図８
（ｂ）の実線１３のように、回り込み量はＮ2 ガスのガ
スの流量の増加に対して急激に減少する。従って、上記
の問題点の原因は、ガスの流量または薬液流量を変化さ
せて回り込み量を適量に設定することが困難であるとい
う点にある。結局、回り込む位置も適切な位置にならな
い。この発明の目的は、短い処理時間で、不良品の発生
率が増加しない半導体装置の製造装置を提供することに
ある。As shown in FIG. 8A, for example, when the flow rate of the chemical solution for etching exceeds a certain value, the amount of the chemical solution that wraps around becomes a temporary function of the chemical solution flow rate, that is, a solid line 12. On the other hand, FIG.
As indicated by the solid line 13 in (b), the wraparound amount sharply decreases as the flow rate of the N 2 gas increases. Therefore, the cause of the above problems is that it is difficult to set the wraparound amount to an appropriate amount by changing the gas flow rate or the chemical solution flow rate. After all, the wraparound position is not the proper position. An object of the present invention is to provide a semiconductor device manufacturing apparatus in which the generation rate of defective products does not increase in a short processing time.
【００１２】[0012]
【課題を解決するための手段】上記課題を解決し目的を
達成するために、この発明の半導体装置の製造装置にお
いては以下の手段を講じた。請求項１に記載した本発明
の半導体装置の製造装置は、半導体基板の表側の面を保
持する半導体基板台と、前記半導体基板台の中心部の回
りに設けられてガスを噴射する噴出口とを有し、前記噴
出口から外側の部分に前記ガスを放射状に噴射して流出
させ、前記中心部付近に発生する負圧によって前記半導
体基板を吸引し保持するベルヌイチャック機構を備えて
いる。前記噴出口から前記半導体基板の周縁部に向かっ
て放射状に流出するガスの速度を前記半導体基板の周縁
部に応じた箇所において変化させる流速調節機構を備え
ている。In order to solve the above problems and achieve the object, the following means are taken in the semiconductor device manufacturing apparatus of the present invention. A semiconductor device manufacturing apparatus of the present invention according to claim 1 is a semiconductor substrate base that holds a front surface of a semiconductor substrate, and an ejection port that is provided around a central portion of the semiconductor substrate base and injects gas. And a Bernoulli chuck mechanism for radially injecting and outflowing the gas from the ejection port to the outside portion and sucking and holding the semiconductor substrate by the negative pressure generated near the central portion. A flow velocity adjusting mechanism is provided for changing the velocity of the gas radially flowing out from the ejection port toward the peripheral portion of the semiconductor substrate at a position corresponding to the peripheral portion of the semiconductor substrate.
【００１３】上記本発明の半導体装置の製造装置におい
ては、前記ベルヌイチャック機構によって前記半導体基
板の表側の面と反対面をエッチングまたは洗浄する場
合、前記半導体基板の表側の面への薬液の回り込み量を
前記ガスの流出する速度を変化させることによって設定
することができるので、不良品の発生率が増加せずに、
前記半導体基板の表側の面、その反対面、その側面の不
要な膜がエッチングされ、洗浄される。従って、処理時
間が短くなる。また、キャリアケースに入れる等の場
合、ダストの発生が低減される。In the above-described semiconductor device manufacturing apparatus of the present invention, when the Bernoulli chuck mechanism etches or cleans the surface opposite to the front surface of the semiconductor substrate, the amount of chemical liquid flowing into the front surface of the semiconductor substrate. Since it can be set by changing the outflow speed of the gas, without increasing the incidence of defective products,
Unnecessary films on the front surface, the opposite surface, and the side surface of the semiconductor substrate are etched and washed. Therefore, the processing time is shortened. In addition, the generation of dust is reduced when it is put in a carrier case or the like.
【００１４】また、請求項２に示すように、前記半導体
基板台に対向して設けられ、エッチング及び洗浄のいず
れか一方の薬液を前記半導体基板の裏側の面に供給する
薬液供給機構を備えている。前記流速調節機構は、前記
半導体基板の周縁部に対向する前記半導体基板台の領域
に設けられて、前記ガスの流出する速度の大きさを小さ
くすること及びその方向を前記半導体基板台側に変化さ
せることの少なくとも一方によって、前記半導体基板の
表側の面に回り込むスピンエッチング及び洗浄のいずれ
か一方の薬液の量を増加させている。Further, as described in claim 2, a chemical liquid supply mechanism is provided which is provided so as to face the semiconductor substrate base and supplies either one of the chemical liquid for etching and the chemical liquid for cleaning to the back surface of the semiconductor substrate. There is. The flow velocity adjusting mechanism is provided in a region of the semiconductor substrate table facing the peripheral edge of the semiconductor substrate to reduce the magnitude of the outflow velocity of the gas and change its direction to the semiconductor substrate table side. By at least one of the above processes, the amount of the chemical liquid for spin etching and / or cleaning that goes around the front surface of the semiconductor substrate is increased.
【００１５】上記本発明の半導体装置の製造装置におい
ては、前記半導体基板の表側の面と反対面をエッチング
または洗浄する場合、前記半導体基板の表側の面への薬
液の回り込み量が前記ガスの流出する速度の大きさを小
さくし、またはその方向を変化させることによって設定
されるので、不良品の発生率が増加せずに、前記半導体
基板の表側の面、その反対面、その側面の不要な膜が除
去される。In the above-described semiconductor device manufacturing apparatus of the present invention, when the surface opposite to the front surface of the semiconductor substrate is etched or washed, the amount of the chemical liquid flowing into the front surface of the semiconductor substrate causes the outflow of the gas. It is set by decreasing the magnitude of the speed to be changed or changing its direction, so that the front surface of the semiconductor substrate, the opposite surface, and the unnecessary side surface of the semiconductor substrate can be formed without increasing the incidence of defective products. The film is removed.
【００１６】また、請求項３に示すように、前記流速調
節機構は、前記半導体基板の周縁部に対向する前記半導
体基板台の領域に設けられた段差及び傾斜の少なくとも
一方となっている。Further, according to a third aspect of the present invention, the flow velocity adjusting mechanism has at least one of a step and an inclination provided in a region of the semiconductor substrate base that faces a peripheral portion of the semiconductor substrate.
【００１７】上記本発明の半導体装置の製造装置におい
ては、前記ベルヌイチャック機構によって前記半導体基
板の表側の面と反対面をエッチングまたは洗浄する場
合、前記半導体基板の表側の面への薬液の回り込み量が
前記段差及び前記傾斜によって容易に設定されるので、
不良品の発生率が増加せずに、前記半導体基板の表側の
面、その反対面、その側面の不要な膜が除去される。In the semiconductor device manufacturing apparatus of the present invention, when the Bernoulli chuck mechanism etches or cleans the surface opposite to the front surface of the semiconductor substrate, the amount of the chemical liquid flowing into the front surface of the semiconductor substrate. Is easily set by the step and the inclination,
The unnecessary film on the front surface, the opposite surface, and the side surface of the semiconductor substrate is removed without increasing the incidence of defective products.
【００１８】請求項４に記載した本発明の半導体装置の
製造装置は、半導体基板の表側の面を保持する半導体基
板台と、前記半導体基板台の中心部の回りに設けられて
ガスを噴射する噴出口とを有し、前記噴出口から外側の
部分に前記ガスを放射状に噴射して流出させ、前記中心
部付近に発生する負圧によって前記半導体基板を吸引し
保持するベルヌイチャック機構を備えている。前記半導
体基板台に対向して設けられ、エッチング及び洗浄のい
ずれか一方の薬液を前記半導体基板の裏側の面に供給す
る薬液供給機構を備えている。前記噴出口から、前記半
導体基板の周縁部に向かって放射状に流出するガスの流
量を減少させて、前記半導体基板の表側の面に回り込む
前記エッチング及び洗浄のいずれか一方の薬液の量を増
加させる流量調節機構を備えている。According to a fourth aspect of the present invention, there is provided a semiconductor device manufacturing apparatus, which is provided around a semiconductor substrate table for holding a front side surface of a semiconductor substrate and a central portion of the semiconductor substrate table to inject a gas. And a Bernoulli chuck mechanism for ejecting the gas radially from the ejection port to the outside to eject the gas, and for sucking and holding the semiconductor substrate by the negative pressure generated near the central portion. There is. A chemical solution supply mechanism that is provided so as to face the semiconductor substrate table and that supplies the chemical solution of either etching or cleaning to the back surface of the semiconductor substrate is provided. The flow rate of the gas that radially flows out from the ejection port toward the peripheral portion of the semiconductor substrate is decreased, and the amount of the chemical liquid for one of the etching and the cleaning that flows around the front surface of the semiconductor substrate is increased. Equipped with a flow rate adjustment mechanism.
【００１９】上記本発明の半導体装置の製造装置におい
ては、前記ベルヌイチャック機構によって前記半導体基
板の表側の面と反対面をエッチングまたは洗浄する場
合、前記半導体基板の表側の面への薬液の回り込み量が
前記ガスの流量を減少させることによって設定されるの
で、不良品の発生率が増加せずに、前記半導体基板の表
側の面、その反対面、その側面の不要な膜が除去され
る。従って、前記半導体基板の二つの面から処理する必
要がなく、処理時間が短くなる。また、キャリアケース
に入れる等の場合、ダストの発生が低減される。In the above-described semiconductor device manufacturing apparatus of the present invention, when the Bernoulli chuck mechanism etches or cleans the surface opposite to the front surface of the semiconductor substrate, the amount of the chemical liquid flowing into the front surface of the semiconductor substrate. Is set by decreasing the flow rate of the gas, so that the unnecessary film on the front surface, the opposite surface, and the side surface of the semiconductor substrate is removed without increasing the generation rate of defective products. Therefore, it is not necessary to process from the two sides of the semiconductor substrate, and the processing time is shortened. In addition, the generation of dust is reduced when it is put in a carrier case or the like.
【００２０】請求項５に記載した本発明の半導体装置の
製造装置は、半導体基板の表側の面を保持する半導体基
板台と、前記半導体基板台の中心部の回りに設けられて
ガスを噴射する噴出口とを有し、前記噴出口から外側の
部分に前記ガスを放射状に噴射して流出させ、前記中心
部付近に発生する負圧によって前記半導体基板を吸引し
保持するベルヌイチャック機構を備えている。前記半導
体基板台の周囲から内側の前記噴出口に達しない領域に
配置され、前記噴射する量より少ない量の前記ガスを吸
引する吸引口からなる流量調節機構を備えている。According to a fifth aspect of the present invention, there is provided a semiconductor device manufacturing apparatus, which is provided around a semiconductor substrate base for holding a front surface of a semiconductor substrate and a central portion of the semiconductor substrate base to inject gas. And a Bernoulli chuck mechanism for ejecting the gas radially from the ejection port to the outside to eject the gas, and for sucking and holding the semiconductor substrate by the negative pressure generated near the central portion. There is. The semiconductor device is provided with a flow rate adjusting mechanism that is arranged in a region that does not reach the ejection port inside from the periphery of the semiconductor substrate table and that has a suction port that sucks the gas in an amount smaller than the injection amount.
【００２１】上記本発明の半導体装置の製造装置におい
ては、前記ベルヌイチャック機構によって前記半導体基
板の表側の面と反対面をエッチングまたは洗浄する場
合、前記半導体基板の表側の面への薬液の回り込み量が
前記吸引口によって容易に設定されるので、不良品の発
生率が増加せずに、前記半導体基板の表側の面、その反
対面、その側面の不要な膜が除去される。In the above-described semiconductor device manufacturing apparatus of the present invention, when the Bernoulli chuck mechanism etches or cleans the surface opposite to the front surface of the semiconductor substrate, the amount of the chemical liquid flowing into the front surface of the semiconductor substrate. Is easily set by the suction port, so that unnecessary films on the surface of the semiconductor substrate, the opposite surface, and the side surface thereof are removed without increasing the incidence of defective products.
【００２２】さらに、請求項１ないし５のいずれか一つ
の項において、前記ベルヌイチャック機構を回転させる
駆動手段を備えている。上記本発明の半導体装置の製造
装置においては、前記半導体基板の表側の面、その反対
面、その側面がスピンエッチングされ、洗浄されるの
で、不良品の発生率が増加せずに、前記半導体基板の不
要な膜が短時間で容易に除去されるFurther, in any one of claims 1 to 5, there is provided a drive means for rotating the Bernoulli chuck mechanism. In the above-described semiconductor device manufacturing apparatus of the present invention, since the front surface, the opposite surface, and the side surface of the semiconductor substrate are spin-etched and washed, the semiconductor substrate can be manufactured without increasing the incidence of defective products. Unnecessary film is easily removed in a short time
【００２３】[0023]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照して説明する。尚、図６、図８と同一部分
には同一符号を付し、主に異なる点について説明する。 （第１実施の形態）図１、図２は、本発明の第１の実施
の形態の構成を示す図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. The same parts as those in FIGS. 6 and 8 are designated by the same reference numerals, and different points will mainly be described. (First Embodiment) FIGS. 1 and 2 are views showing a configuration of a first embodiment of the present invention.
【００２４】図１に示すように、半導体基板１をベルヌ
イチャック機構の半導体基板台２、２ａの上に配置した
状態で、基板台２、２ａの噴出口４から圧縮されたガス
（例えばＮ2 ガス）を周縁部側に向かって噴射させる。
この結果生じた半導体基板台２ａ付近の負圧によって、
半導体基板１が浮上した状態で吸着されて保持される。As shown in FIG. 1, in a state where the semiconductor substrate 1 is placed on the semiconductor substrate bases 2 and 2a of the Bernoulli chuck mechanism, the gas compressed from the ejection port 4 of the substrate bases 2 and 2a (for example, N 2 Gas) is injected toward the peripheral side.
As a result of the negative pressure generated near the semiconductor substrate base 2a,
The semiconductor substrate 1 is attracted and held in a floating state.
【００２５】さらに、半導体基板１の裏側の面（保持面
の反対面）のエッチングまたは洗浄を行う部分に対向し
て、半導体基板１とベルヌイチャック機構の半導体基板
台２との間の間隔を広くしている。このような段差部１
４によって、半導体基板１と半導体基板台２との間から
流出するガスの経路に垂直なその経路の断面の面積はこ
の段差部１４の部分で急激に増加する。Further, the gap between the semiconductor substrate 1 and the semiconductor substrate base 2 of the Bernoulli chuck mechanism is widened so as to face the portion of the back surface (the surface opposite to the holding surface) of the semiconductor substrate 1 to be etched or washed. doing. Such a step 1
4, the area of the cross section of the path perpendicular to the path of the gas flowing out from between the semiconductor substrate 1 and the semiconductor substrate base 2 increases rapidly at the step portion 14.
【００２６】また、図２に示すように、段差部１４の代
わりに傾斜部１５を設けてもよい。この場合も上記と同
様に、傾斜部１５の部分で、半導体基板１と半導体基板
台２との間隔が広くなるので、ガスが流出する経路に垂
直なその経路の断面の面積が急激に増加する。Further, as shown in FIG. 2, an inclined portion 15 may be provided instead of the step portion 14. Also in this case, as in the above case, the distance between the semiconductor substrate 1 and the semiconductor substrate base 2 becomes wide at the inclined portion 15, so that the area of the cross section of the path perpendicular to the path through which the gas flows out sharply increases. .
【００２７】上記のようにガスが流出する経路に垂直な
その経路の断面の面積が急激に増加する場合、その流出
するガスの速度は、段差部１４、傾斜部１５の所で変化
する。つまり、ガスの流出する方向が半導体基板１側か
ら段差部１４、または傾斜部１５の側に広がり、及び速
度の大きさが減少する。また、半導体基板１の保持面に
平行な平面内でかつ半導体基板台２の中央から周縁部へ
の放射状の方向を噴出方向とすると、段差部１４、傾斜
部１５の所で、少なくとも一部のガスの速さ、特に速度
の噴出方向の成分は大きく減少し、またはその方向が大
きく変化する。この結果、この段差部１４及び傾斜部１
５の領域においては回り込んで来た薬液を押し戻す圧力
が急激に減少する。従って、薬液がこの傾斜部１５に対
向した半導体基板１の領域に回り込む。When the area of the cross section of the path that is perpendicular to the path through which the gas flows out sharply increases as described above, the speed of the flowing out gas changes at the step portion 14 and the inclined portion 15. That is, the gas outflow direction is expanded from the semiconductor substrate 1 side to the stepped portion 14 or the inclined portion 15 side, and the magnitude of the velocity is reduced. Further, when the ejection direction is a radial direction from the center of the semiconductor substrate base 2 to the peripheral portion within a plane parallel to the holding surface of the semiconductor substrate 1, at least a part of the step portion 14 and the inclined portion 15 is formed. The velocity of the gas, especially the component of the velocity in the jet direction, is greatly reduced or the direction thereof is largely changed. As a result, the step portion 14 and the inclined portion 1
In the region of No. 5, the pressure for pushing back the circulated chemical liquid sharply decreases. Therefore, the chemical solution goes around to the region of the semiconductor substrate 1 facing the inclined portion 15.
【００２８】例えば、エッチング用の薬液を半導体基板
の上方から滴下等によって供給してウェットエッチング
する場合、薬液はこの段差部１４、傾斜部１５の領域に
対向した半導体基板１の表側の面（保持面）に回り込
む。従って、この段差部１４、傾斜部１５に対向した領
域の半導体基板１の膜がエッチングされる。For example, when wet etching is performed by supplying a chemical solution for etching from above the semiconductor substrate by dropping or the like, the chemical solution faces the front surface (holding) of the semiconductor substrate 1 facing the regions of the step portion 14 and the inclined portion 15. Wrap around. Therefore, the film of the semiconductor substrate 1 in the region facing the step portion 14 and the inclined portion 15 is etched.
【００２９】上記の実施の形態においては、半導体基板
台２の段差部１４、傾斜部１５によってエッチング用ま
たは洗浄用の薬液の回り込み量が容易に設定されるの
で、半導体基板１の保持面、その反対面、及びその側面
の不要な膜がエッチングされ、洗浄される。また、半導
体基板１のエッチングむらが低減される。従って、キャ
リアケースに入れる等の場合、ダストの発生が減少し、
半導体基板の良品率、信頼性が悪くならない。 （第２の実施の形態）図３は、第２の実施の形態の構成
を示す図である。第１の実施の形態と異なる点は、吸引
口１６によってベルヌイチャック機構のガスの流量が低
減される点である。以下、この異なる点について説明す
る。In the above-described embodiment, since the amount of the chemical solution for etching or cleaning that flows in is easily set by the step portion 14 and the inclined portion 15 of the semiconductor substrate base 2, the holding surface of the semiconductor substrate 1 The unnecessary film on the opposite surface and its side surface is etched and cleaned. Further, uneven etching of the semiconductor substrate 1 is reduced. Therefore, if you put it in a carrier case, the generation of dust will decrease,
The yield rate and reliability of semiconductor substrates do not deteriorate. (Second Embodiment) FIG. 3 is a diagram showing the configuration of the second embodiment. The difference from the first embodiment is that the suction port 16 reduces the gas flow rate of the Bernoulli chuck mechanism. Hereinafter, this different point will be described.
【００３０】図３に示すように、半導体基板１の保持面
のエッチングを行う箇所と行わない箇所の境界に対向し
て、半導体基板台２にガスの吸引口１６を設ける。この
場合、ガスが吸引口１６から逃げる。さらに、この吸引
口１６からのガスは、固定部１８から矢印１７のように
ベルヌイチャック機構の外部に出る。従って、吸引口１
６の位置から半導体基板１の周縁部側へ向かうガスの流
量が減少する。この結果、この吸引口１６に対向した半
導体基板１の部分から周縁部の所では回り込んで来た薬
液を押し戻す圧力が大きく減少する。従って、薬液がこ
の吸引口１６に対向した箇所まで回り込む。つまり、こ
の半導体基板１の領域の膜がエッチングされる。尚、吸
引口１６の所でガスの流量が不連続に大きく減少するほ
ど、吸引口１６の内側より外側における回りこんできた
薬液を押し戻す圧力がより大きく減少する。また、ベル
ヌイチャック機構と固定部３との間の取り付けには高い
気密性は不要である。As shown in FIG. 3, a gas suction port 16 is provided in the semiconductor substrate base 2 so as to face the boundary between the portion where the holding surface of the semiconductor substrate 1 is etched and the portion where it is not etched. In this case, the gas escapes from the suction port 16. Further, the gas from the suction port 16 goes out of the Bernoulli chuck mechanism from the fixing portion 18 as shown by an arrow 17. Therefore, the suction port 1
The gas flow rate from the position 6 toward the peripheral edge of the semiconductor substrate 1 decreases. As a result, the pressure for pushing back the chemical solution that has come around from the portion of the semiconductor substrate 1 facing the suction port 16 to the peripheral portion is greatly reduced. Therefore, the drug solution wraps around to the position facing the suction port 16. That is, the film in the region of the semiconductor substrate 1 is etched. It should be noted that, as the flow rate of the gas at the suction port 16 decreases discontinuously, the pressure for pushing back the circulated chemical solution from the inside of the suction port 16 decreases more greatly. Further, the attachment between the Bernoulli chuck mechanism and the fixed portion 3 does not require high airtightness.
【００３１】上記の実施の形態においては、半導体基板
台２の吸引口１６によってエッチング用または洗浄用の
薬液の回り込み量が容易に設定されるので、半導体基板
１の保持面、その反対面、及びその側面の不要な膜がエ
ッチングまたは洗浄される。また、半導体基板１のエッ
チングむらが低減される。従って、キャリアケースに入
れる等の場合、ダストの発生が減少し、半導体基板の良
品率、信頼性が悪くならない。In the above-described embodiment, since the amount of the chemical solution for etching or cleaning that flows in is easily set by the suction port 16 of the semiconductor substrate base 2, the holding surface of the semiconductor substrate 1, the opposite surface thereof, and The unnecessary film on the side surface is etched or washed. Further, uneven etching of the semiconductor substrate 1 is reduced. Therefore, when it is put in a carrier case, the generation of dust is reduced, and the non-defective rate and reliability of the semiconductor substrate are not deteriorated.
【００３２】図４（ａ）（ｂ）は、上記の実施の形態に
よってスピンエッチングした半導体基板１の様子を示す
図である。図５（ａ）（ｂ）は、上記の実施の形態を用
いた場合、薬液流量及び噴出口４から噴出されるガスの
流量と薬液の回り込み量との関係を示すグラフである。FIGS. 4A and 4B are views showing a state of the semiconductor substrate 1 spin-etched according to the above-mentioned embodiment. 5A and 5B are graphs showing the relationship between the flow rate of the chemical liquid, the flow rate of the gas ejected from the ejection port 4 and the wraparound amount of the chemical liquid when the above embodiment is used.
【００３３】図４（ａ）（ｂ）に示すように、薬液の回
り込み量が適切に設定され、半導体基板１の保持面１
９、その反対面、及びその側面の不要な膜がエッチング
されている。また、エッチングむらが低減されている。As shown in FIGS. 4 (a) and 4 (b), the amount of the chemical solution flowing in is set appropriately, and the holding surface 1 of the semiconductor substrate 1 is
9, unnecessary films on the opposite surface and the side surface thereof are etched. In addition, uneven etching is reduced.
【００３４】また、図５（ａ）に示すように、例えばエ
ッチング用の薬液流量が一定値を越えた場合、その増加
に対する回り込み量の関係は実線２０となる。つまり、
実線２０は一定値２０ａに漸近する特性となる。また、
図５（ｂ）に示すように、ガスの流量の増加に伴って回
り込み量は実線２１のように減少する。また、ガスの流
量の増加に対して回り込み量が値２１ａのままほとんど
減少しない範囲２１ｂが存在する。この場合、実際の薬
液の回り込み量を薬液流量またはガスの流量の増加に対
してほとんど変化しない回り込み量の値２０ａないし値
２１ａにすることは容易である。従って、上記の段差部
１４、傾斜部１５、吸引口１６を変えることによって、
薬液の半導体基板１の保持面への回り込み量、及び回り
込む位置が容易に設定される。その結果として、半導体
基板１の保持面、その反対面、及びその側面つまりベベ
ル面の不要な膜がエッチングされる。Further, as shown in FIG. 5A, when the flow rate of the chemical solution for etching exceeds a certain value, for example, a solid line 20 shows the relationship of the wraparound amount with the increase. That is,
The solid line 20 has a characteristic that gradually approaches the constant value 20a. Also,
As shown in FIG. 5B, the wraparound amount decreases as shown by the solid line 21 as the gas flow rate increases. Further, there is a range 21b in which the wraparound amount remains at the value 21a and hardly decreases as the gas flow rate increases. In this case, it is easy to set the actual wraparound amount to the wraparound amount values 20a to 21a that hardly change with an increase in the flow rate of the chemical liquid or gas. Therefore, by changing the step portion 14, the inclined portion 15, and the suction port 16 described above,
It is possible to easily set the amount of the chemical liquid that wraps around the holding surface of the semiconductor substrate 1 and the position where the chemical liquid wraps around. As a result, the unnecessary film on the holding surface of the semiconductor substrate 1, the opposite surface thereof, and the side surface thereof, that is, the bevel surface is etched.
【００３５】尚、洗浄についてもウェットエッチングの
場合と同じように、洗浄用の薬液によって半導体基板１
が洗浄される。また、上記の半導体基板台２、２ａ、固
定部３はテフロン等で作られている。また、ベルヌイチ
ャック機構を回転させる駆動装置６は、モータ７、ギヤ
８に限らない。As in the case of wet etching, the semiconductor substrate 1 is also washed with a cleaning chemical.
Is washed. The semiconductor substrate bases 2 and 2a and the fixing portion 3 are made of Teflon or the like. Further, the drive device 6 for rotating the Bernoulli chuck mechanism is not limited to the motor 7 and the gear 8.
【００３６】[0036]
【発明の効果】以上説明したように、この発明によれ
ば、短い処理時間で、不良品の発生率が増加しない半導
体装置の製造装置を提供できる。As described above, according to the present invention, it is possible to provide a semiconductor device manufacturing apparatus in which the generation rate of defective products does not increase in a short processing time.
【図１】本発明の第１の実施の形態に係る半導体装置の
製造装置の構成を示す断面図。FIG. 1 is a cross-sectional view showing the configuration of a semiconductor device manufacturing apparatus according to a first embodiment of the present invention.
【図２】本発明の第１の実施の形態に係る半導体装置の
製造装置の構成を示す断面図。FIG. 2 is a cross-sectional view showing the configuration of a semiconductor device manufacturing apparatus according to the first embodiment of the present invention.
【図３】本発明の第２の実施の形態に係る半導体装置の
製造装置の構成を示す断面図。FIG. 3 is a sectional view showing the configuration of a semiconductor device manufacturing apparatus according to a second embodiment of the present invention.
【図４】本発明の実施の形態によって処理されるウェハ
（半導体装置）の一例を示す図で、（ａ）は上面図、
（ｂ）は側面図。FIG. 4 is a diagram showing an example of a wafer (semiconductor device) processed according to an embodiment of the present invention, in which (a) is a top view,
(B) is a side view.
【図５】本発明の実施の形態に係る半導体装置の製造装
置を説明する図で、（ａ）は薬液流量と回り込み量の関
係を示すグラフで、（ｂ）はガスの流量と回り込み量の
関係を示すグラフ。5A and 5B are diagrams illustrating a semiconductor device manufacturing apparatus according to an embodiment of the present invention, FIG. 5A is a graph showing a relationship between a chemical liquid flow rate and a sneak amount, and FIG. A graph showing the relationship.
【図６】従来の半導体装置の製造装置の一例の構成を示
す断面図。FIG. 6 is a cross-sectional view showing the configuration of an example of a conventional semiconductor device manufacturing apparatus.
【図７】従来の半導体装置の製造装置によって処理され
るウェハ（半導体装置）の一例を示す図で、（ａ）は上
面図、（ｂ）は側面図。FIG. 7 is a diagram showing an example of a wafer (semiconductor device) processed by a conventional semiconductor device manufacturing apparatus, in which (a) is a top view and (b) is a side view.
【図８】従来の半導体装置の製造装置を説明する図で、
（ａ）は薬液流量と回り込み量の関係を示すグラフで、
（ｂ）はガスの流量と回り込み量の関係を示すグラフ。FIG. 8 is a diagram illustrating a conventional semiconductor device manufacturing apparatus,
(A) is a graph showing the relationship between the chemical flow rate and the wraparound amount,
(B) is a graph showing the relationship between the flow rate of gas and the wraparound amount.
１…半導体基板、 ２、２ａ…半導体基板台、 ４…噴出口、 ６…駆動装置 ７モータ、 ８…ギヤ １４…段差部、 １５…傾斜部、 １６…吸引口。 DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 and 2a ... Semiconductor substrate stand, 4 ... Jet port, 6 ... Drive device 7 motor, 8 ... Gear 14 ... Step part, 15 ... Inclined part, 16 ... Suction port.
Claims (6)
板台と、前記半導体基板台の中心部の回りに設けられて
ガスを噴射する噴出口とを有し、前記噴出口から外側の
部分に前記ガスを放射状に噴射して流出させ、前記中心
部付近に発生する負圧によって前記半導体基板を吸引し
保持するベルヌイチャック機構と、 前記噴出口から前記半導体基板の周縁部に向かって放射
状に流出するガスの速度を前記半導体基板の周縁部に応
じた箇所において変化させる流速調節機構とを具備する
ことを特徴とする半導体装置の製造装置。1. A semiconductor substrate table that holds a front surface of a semiconductor substrate, and a jet port that is provided around a central portion of the semiconductor substrate table and jets gas, and a portion outside the jet port. A Bernoulli chuck mechanism for radially injecting and outflowing the gas, and sucking and holding the semiconductor substrate by a negative pressure generated near the central portion, and radially from the ejection port toward the peripheral portion of the semiconductor substrate. An apparatus for manufacturing a semiconductor device, comprising: a flow velocity adjusting mechanism that changes a velocity of an outflowing gas at a position corresponding to a peripheral portion of the semiconductor substrate.
ッチング及び洗浄のいずれか一方の薬液を前記半導体基
板の裏側の面に供給する薬液供給機構を具備し、 前記流速調節機構は、前記半導体基板の周縁部に対向す
る前記半導体基板台の領域に設けられて、前記ガスの流
出する速度の大きさを小さくすること及びその方向を前
記半導体基板台側に変化させることの少なくとも一方に
よって、前記半導体基板の表側の面に回り込むエッチン
グ及び洗浄のいずれか一方の薬液の量を増加させること
を特徴とする請求項１に記載の半導体装置の製造装置。2. A chemical solution supply mechanism, which is provided so as to face the semiconductor substrate table and supplies one of a chemical solution for etching and cleaning to a back surface of the semiconductor substrate, the flow rate adjusting mechanism comprising: By at least one of being provided in a region of the semiconductor substrate table facing the peripheral edge of the semiconductor substrate, reducing the magnitude of the gas outflow velocity and changing the direction thereof to the semiconductor substrate table side, 2. The semiconductor device manufacturing apparatus according to claim 1, wherein the amount of the chemical liquid for etching or cleaning that flows around the front surface of the semiconductor substrate is increased.
縁部に対向する前記半導体基板台の領域に設けられた段
差及び傾斜の少なくとも一方であることを特徴とする請
求項１に記載の半導体装置の製造装置。3. The semiconductor device according to claim 1, wherein the flow velocity adjusting mechanism is at least one of a step and an inclination provided in a region of the semiconductor substrate base that faces a peripheral portion of the semiconductor substrate. Equipment manufacturing equipment.
板台と、前記半導体基板台の中心部の回りに設けられて
ガスを噴射する噴出口とを有し、前記噴出口から外側の
部分に前記ガスを放射状に噴射して流出させ、前記中心
部付近に発生する負圧によって前記半導体基板を吸引し
保持するベルヌイチャック機構と、 前記半導体基板台に対向して設けられ、エッチング及び
洗浄のいずれか一方の薬液を前記半導体基板の裏側の面
に供給する薬液供給機構と、 前記噴出口から、前記半導体基板の周縁部に向かって放
射状に流出するガスのの流量を減少させて、前記半導体
基板の表側の面に回り込む前記エッチング及び洗浄のい
ずれか一方の薬液の量を増加させる流量調節機構とを具
備することを特徴とする半導体装置の製造装置。4. A semiconductor substrate table that holds a front surface of a semiconductor substrate, and a jet port that is provided around a central portion of the semiconductor substrate table and jets gas, and a portion outside the jet port. A Bernoulli chuck mechanism for radially injecting and outflowing the gas, and sucking and holding the semiconductor substrate by a negative pressure generated near the central portion, which is provided so as to face the semiconductor substrate table and is used for etching and cleaning. A chemical liquid supply mechanism that supplies one of the chemical liquids to the surface on the back side of the semiconductor substrate, and the flow rate of gas that radially flows out from the ejection port toward the peripheral portion of the semiconductor substrate to reduce the semiconductor. An apparatus for manufacturing a semiconductor device, comprising: a flow rate adjusting mechanism for increasing the amount of the chemical liquid for either one of the etching and the cleaning that goes around the front surface of the substrate.
板台と、前記半導体基板台の中心部の回りに設けられて
ガスを噴射する噴出口とを有し、前記噴出口から外側の
部分に前記ガスを放射状に噴射して流出させ、前記中心
部付近に発生する負圧によって前記半導体基板を吸引し
保持するベルヌイチャック機構と、 前記半導体基板台の周囲から内側の前記噴出口に達しな
い領域に配置され、前記噴射する量より少ない量の前記
ガスを吸引する吸引口からなる流量調節機構とを具備す
ることを特徴とする半導体装置の製造装置。5. A semiconductor substrate table that holds a front surface of a semiconductor substrate, and a jet port that is provided around a central portion of the semiconductor substrate table and jets gas, and a portion outside the jet port. A Bernoulli chuck mechanism for radially injecting and outflowing the gas to the outside and sucking and holding the semiconductor substrate by a negative pressure generated in the vicinity of the central portion, and does not reach the inside ejection port from the periphery of the semiconductor substrate table. A semiconductor device manufacturing apparatus, comprising: a flow rate adjusting mechanism that is disposed in a region and that includes a suction port that sucks an amount of the gas that is smaller than the injection amount.
動手段を具備することを特徴とする請求項１ないし請求
項５いずれか一つの項に記載の半導体装置の製造装置。6. The semiconductor device manufacturing apparatus according to claim 1, further comprising a driving unit that rotates the Bernoulli chuck mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33696795A JPH09181026A (en) | 1995-12-25 | 1995-12-25 | Semiconductor device manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33696795A JPH09181026A (en) | 1995-12-25 | 1995-12-25 | Semiconductor device manufacturing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09181026A true JPH09181026A (en) | 1997-07-11 |
Family
ID=18304266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33696795A Pending JPH09181026A (en) | 1995-12-25 | 1995-12-25 | Semiconductor device manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09181026A (en) |
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1995
- 1995-12-25 JP JP33696795A patent/JPH09181026A/en active Pending
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