JPH09176842A - Titanium target for magnetron sputtering - Google Patents

Titanium target for magnetron sputtering

Info

Publication number
JPH09176842A
JPH09176842A JP33478395A JP33478395A JPH09176842A JP H09176842 A JPH09176842 A JP H09176842A JP 33478395 A JP33478395 A JP 33478395A JP 33478395 A JP33478395 A JP 33478395A JP H09176842 A JPH09176842 A JP H09176842A
Authority
JP
Japan
Prior art keywords
target
sputtering
sprayed coating
magnetron sputtering
sprayed film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP33478395A
Other languages
Japanese (ja)
Inventor
Shuji Miki
修司 三木
Munetaka Mashima
宗位 真嶋
Terushi Mishima
昭史 三島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP33478395A priority Critical patent/JPH09176842A/en
Publication of JPH09176842A publication Critical patent/JPH09176842A/en
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce the formation of particles, to decrease the frequency of the replacement of target, and to improve operating efficiency by forming a metallic sprayed coating on the uneroded part in the outside peripheral part as well as in the central part of sputter surface of a Ti target. SOLUTION: A sprayed coating is formed on the uneroded part in the central part and outside peripheral part of a sputter surface and further, if necessary, on the sputter surface side of a backing plate. This sprayed coating is composed of a metallic sprayed coating of any of Ti, Zn, Hf, Nb, Ta, Mo, W, Al, and Cu, or a carbide sprayed coating of any of TiC, SiC, and WC, or an oxide sprayed coating of either of TiO2 and Al2 O3 . Because these sprayed coatings are increased in surface roughness, a firm adhesion free from peeling during sputtering is formed between the uneroded part and the deposit resulting from sputtering, and, as a result, the peeling of the sputter deposit can be prevented even if high-powered sputtering is performed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】この発明は、長期に亘ってパ
ーティクルの少ない成膜形成が可能なマグネトロンスパ
ッタリング用Ｔｉターゲットに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Ti target for magnetron sputtering capable of forming a film with few particles for a long period of time.

【０００２】[0002]

【従来の技術】一般に、雰囲気ガスとしてＮ2 やＯ2 な
どの反応性ガスを用いてプラズマを発生させ、マグネッ
トによりＴｉターゲットの表面に垂直方向の磁界を印加
しながら、前記Ｔｉターゲット表面をスパッタして基体
の表面にＴｉＮ膜などのスパッタ膜を形成するマグネト
ロンスパッタリング法が知られている。このＴｉターゲ
ットを用いてマグネトロンスパッタリングを行うと、Ｔ
ｉターゲットのスパッタ面は中央部および外周縁部を除
くリング部分が溶融し、中央部および外周縁部は溶融さ
れない。Ｔｉターゲットのスパッタ面の溶融されない中
央部および外周縁部を、通常、非エロージョン部と称
し、Ｔｉターゲットのスパッタ面の中央部と外周縁部で
挟まれた溶融する部分を、通常、エロージョン部と称し
ている。マグネトロンスパッタリング中に前記非エロー
ジョン部は溶融しないため、その部分にＴｉＮなどのス
パッタ膜が形成され、非エロージョン部に形成されたス
パッタ膜が剥離脱落してシリコンウエハなどの基板上に
直径：０．３μｍ以上の粗大なパーティクルが生ずると
言われている。In general, plasma is generated using a reactive gas such as N 2 or O 2 as an atmosphere gas, while applying a magnetic field in the direction perpendicular to the surface of the Ti target by the magnet, sputtering the Ti target surface Then, a magnetron sputtering method is known in which a sputtered film such as a TiN film is formed on the surface of the substrate. When magnetron sputtering is performed using this Ti target, T
On the sputter surface of the i target, the ring portion except the central portion and the outer peripheral edge portion is melted, and the central portion and the outer peripheral edge portion are not melted. The unmelted central portion and outer peripheral edge portion of the sputtering surface of the Ti target are usually referred to as non-erosion portions, and the molten portion sandwiched between the central portion and outer peripheral edge portion of the Ti target sputtering surface is usually referred to as an erosion portion. I am calling it. Since the non-erosion portion does not melt during magnetron sputtering, a sputtered film of TiN or the like is formed on the non-erosion portion, and the sputtered film formed on the non-erosion portion is peeled off and dropped onto a substrate such as a silicon wafer with a diameter of 0. It is said that coarse particles of 3 μm or more are generated.

【０００３】このマグネトロンスパッタリング法を実施
するためのマグネトロンスパッタリング装置は、近年、
ますます大型化および高性能化し、これに伴ないスパッ
タ条件は一段と苛酷さを増す状況にあるが、上記の従来
Ｔｉターゲットを一段と苛酷な条件下でスパッタを行う
と、一層短時間の操業で成膜中に直径：０．３μｍ以上
の粗大なパーティクルが多数発生し、このため、Ｔｉタ
ーゲットの頻繁な交換を必要とするところから、スパッ
タリングの操業効率はかえって低下することがあった。A magnetron sputtering apparatus for carrying out this magnetron sputtering method has recently been used.
Although the size and performance of the sputtering equipment are becoming larger and larger, the sputter conditions are becoming more and more severe, but if the conventional Ti target is sputtered under the more severe conditions, the operation will be completed in a shorter time. A large number of coarse particles having a diameter of 0.3 μm or more were generated in the film, which required frequent replacement of the Ti target, which sometimes rather reduced the operating efficiency of sputtering.

【０００４】これを改善するために、スパッタ面の平面
リング状のエロージョン部の表面粗さを０．１〜１μｍ
Ｒａ（中心線平均粗さ）とし、残りのスパッタ面の中央
部および外周縁部で構成された非エロージョン部の表面
粗さをエロージョン部の表面粗さよりも粗い２〜５μｍ
Ｒａとしたマグネトロンスパッタリング用Ｔｉターゲッ
トが提案されている。すなわち、Ｔｉターゲットの非エ
ロージョン部の表面粗さを通常よりも粗い２〜５μｍＲ
ａとして非エロージョン部に付着したＴｉＮなどの被膜
が剥離脱落しないようにしっかりと付着させ、粗大パー
ティクルが発生するのを抑制したのである。そして上記
非エロージョン部における外周縁部の角部をＲ加工面と
することにより粗大パーティクルの発生がさらに防止さ
れるとしている（特開平６−３０６５９２公報参照）In order to improve this, the surface roughness of the flat ring-shaped erosion portion of the sputter surface is 0.1 to 1 μm.
Ra (center line average roughness), and the surface roughness of the non-erosion portion constituted by the central portion and the outer peripheral edge portion of the remaining sputtering surface is 2 to 5 μm which is rougher than the surface roughness of the erosion portion.
A Ti target for magnetron sputtering having Ra has been proposed. That is, the surface roughness of the non-erosion portion of the Ti target is 2 to 5 μm, which is rougher than usual.
As a, the coating such as TiN adhered to the non-erosion portion was firmly adhered so as not to peel and fall off, and the generation of coarse particles was suppressed. Further, it is said that the generation of coarse particles is further prevented by making the corner portion of the outer peripheral edge portion of the non-erosion portion into the R processed surface (see Japanese Patent Laid-Open No. 6-306592).

【０００５】[0005]

【発明が解決しようとする課題】上記特開平６−３０６
５９２公報記載のマグネトロンスパッタリング用Ｔｉタ
ーゲットは、確かに粗大パーティクルの発生が少なく、
優れたＴｉターゲットであるが、出力：１０ＫＷを越え
る高出力スパッタリングに対しては、スパッタ中の加熱
冷却の熱サイクルが激しく、そのためにターゲットの非
エロージョン部に堆積した付着膜が剥離し、粗大パーテ
ィクルの発生は避けられず、これが原因で使用寿命に至
るのが現状であった。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
The Ti target for magnetron sputtering described in the 592 publication does not generate much coarse particles,
Although it is an excellent Ti target, for high-power sputtering exceeding output: 10 KW, the heat cycle of heating and cooling during sputtering is vigorous, which causes the adhered film deposited on the non-erosion part of the target to peel off, resulting in coarse particles. Occurrence of unavoidable occurrence is unavoidable, and it is the current situation that this leads to the end of the service life.

【０００６】[0006]

【課題を解決するための手段】そこで、本発明者等は、
上述のような観点から、出力：１０ＫＷを越える高出力
スパッタリングを行っても成膜中の粗大パーティクルの
発生が少ないマグネトロンスパッタリング用Ｔｉターゲ
ットを開発すべく研究を行なった結果、（ａ）Ｔｉター
ゲットのスパッタ面の非エロージョン部、すなわちスパ
ッタ面の中央部および外周縁部に溶射膜を形成すると、
非エロージョン部に堆積した堆積物がスパッタ中に前記
非エロージョン部から剥離しにくくなって、スパッタ中
の粗大パーティクルの混入が防止される、（ｂ）溶射膜
は、金属溶射膜としてＴｉ、Ｚｒ、Ｈｆ、Ｎｂ、Ｔａ、
Ｍｏ、Ｗ、Ａｌ、Ｃｕが好ましく、炭化物溶射膜として
ＴｉＣ、ＳｉＣ、ＷＣが好ましく、さらに酸化物溶射膜
としてＴｉＯ2 、Ａｌ2 Ｏ3 が好ましい、（ｃ）これら
溶射膜をターゲットのバッキングプレートのスパッタ面
側にも形成すると、成膜中の粗大パーティクルの形成が
一層抑制されるようになる、などの研究結果を得たので
ある。Means for Solving the Problems Accordingly, the present inventors have
From the viewpoints described above, as a result of conducting research to develop a Ti target for magnetron sputtering in which coarse particles are less likely to be generated during film formation even when high-power sputtering exceeding output: 10 KW is performed, When a sprayed film is formed on the non-erosion portion of the sputter surface, that is, on the central portion and outer peripheral edge portion of the sputter surface,
The deposit deposited on the non-erosion part is less likely to be separated from the non-erosion part during sputtering, and coarse particles are prevented from being mixed during the sputtering. (B) The sprayed film is a metal sprayed film made of Ti, Zr, Hf, Nb, Ta,
Mo, W, Al and Cu are preferable, TiC, SiC and WC are preferable as the carbide sprayed film, and TiO 2 and Al 2 O 3 are further preferable as the oxide sprayed film. (C) These sprayed films are used for the target backing plate. The inventors obtained the results of researches such that the formation of coarse particles during the film formation is further suppressed when the film is formed also on the sputtering surface side.

【０００７】この発明は、上記の研究結果にもとづいて
なされたものであって、（１）Ｔｉターゲットのスパッ
タ面中央部および外周縁部の非エロージョン部に溶射膜
が形成されているマグネトロンスパッタリング用Ｔｉタ
ーゲット、（２）Ｔｉターゲットのスパッタ面の非エロ
ージョン部およびＴｉターゲットをバックアップするバ
ッキングプレートのスパッタ面の側に溶射膜が形成され
ているマグネトロンスパッタリング用Ｔｉターゲット、
に特徴を有するものである。The present invention has been made on the basis of the above research results. (1) For magnetron sputtering in which a sprayed film is formed on the non-erosion part of the center and outer peripheral edge of the Ti target sputtering surface. Ti target, (2) Ti target for magnetron sputtering in which a sprayed film is formed on the non-erosion part of the sputtering surface of the Ti target and on the sputtering surface side of the backing plate that backs up the Ti target,
It is characterized by the following.

【０００８】上記溶射膜は、Ｔｉ、Ｚｒ、Ｈｆ、Ｎｂ、
Ｔａ、Ｍｏ、Ｗ、Ａｌ、Ｃｕの内のいずれかの金属溶射
膜、ＴｉＣ、ＳｉＣ、ＷＣの内のいずれかの炭化物溶射
膜、ＴｉＯ2 、Ａｌ2 Ｏ3 の内のいずれかの酸化物溶射
膜であることが好ましいが、その中でも金属溶射膜が最
も好ましい。The above sprayed film is formed of Ti, Zr, Hf, Nb,
Ta, Mo, W, Al, Cu metal sprayed film, TiC, SiC, WC carbide sprayed film, TiO 2 , Al 2 O 3 oxide sprayed A film is preferable, but a metal sprayed film is most preferable.

【０００９】この発明のＴｉターゲットにおいて、非エ
ロージョン部に溶射膜を形成すると、出力：１０ＫＷを
越える高出力スパッタリングを行っても成膜中の粗大パ
ーティクルの発生が少なくなる理由として、溶射膜は表
面粗さが大きく、そのために、非エロージョン部とスパ
ッタ生成堆積物との間にスパッタ中に剥離のない強固な
密着力を形成され、それによって非エロージョン部から
のスパッタ生成堆積物の剥離脱落を防止することによる
ものと考えられる。In the Ti target of the present invention, when the sprayed film is formed on the non-erosion part, the reason why the generation of coarse particles during the film formation is reduced even if the high power sputtering exceeding the output: 10 KW is carried out is the surface of the sprayed film. The roughness is large, and as a result, a strong adhesion force is formed between the non-erosion part and the sputter-generated deposits without spalling during sputtering, thereby preventing the spall-generated deposits from falling off from the non-erosion part. It is thought to be due to doing.

【００１０】[0010]

【発明の実施の形態】ターゲットスパッタ部として、直
径：２５０mm×厚さ：１０mmの寸法をもった純度：９
９．９９９％純Ｔｉ円板を用意し、さらに冷却用罰金具
プレートとして、直径：３５０mm×厚さ：１５mmの寸法
をもったアルミニウム合金（ＪＩＳ Ａ５０５２）製円
板を用意した。この純Ｔｉ円板をアルミニウム合金製円
板に拡散接合してターゲット基体を作製し、このターゲ
ット基体の純Ｔｉ円板の非エロージョン部およびアルミ
ニウム合金製円板のスパッタ面側にプラズマ熔射するこ
とにより、表１〜表２に示される組成および厚さの溶射
膜を形成し、本発明Ｔｉターゲット１〜１４を作製し
た。BEST MODE FOR CARRYING OUT THE INVENTION As a target sputter part, a purity of 9 with a diameter of 250 mm and a thickness of 10 mm.
A 9.999% pure Ti disk was prepared, and an aluminum alloy (JIS A5052) disk having dimensions of diameter: 350 mm × thickness: 15 mm was prepared as a cooling metal plate. This pure Ti disk is diffusion-bonded to an aluminum alloy disk to prepare a target substrate, and plasma spraying is performed on the non-erosion portion of the pure Ti disk of this target substrate and on the sputtering surface side of the aluminum alloy disk. Thus, spray coatings having the compositions and thicknesses shown in Tables 1 and 2 were formed, and Ti targets 1 to 14 of the invention were produced.

【００１１】比較のために、ターゲット基体の純Ｔｉ円
板の非エロージョン部の表面粗さを３．５μｍＲａとし
た従来Ｔｉターゲットを用意した。For comparison, a conventional Ti target in which the surface roughness of the non-erosion portion of the pure Ti disk of the target substrate was 3.5 μmRa was prepared.

【００１２】これら本発明Ｔｉターゲット１〜１４およ
び従来Ｔｉターゲットを直流マグネトロンスパッタリン
グ装置に装入し、出力：１２ＫＷ、雰囲気：Ａｒ／Ｎ2
＝１：１の気流中、スパッタ圧力：８ｍＴｏｒｒ、スパ
ッタ時間：２分／ウエハの条件で、直径：１５０mmの平
面円形のＳｉウエハの表面に０．５μｍのＴｉＮ成膜を
形成する操作を繰り返し行ない、ＴｉＮ成膜中に存在す
る直径：０．２μｍ以上のパーティクル数をパーティク
ルカウンターを用い、レーザー光を当てて観察し、前記
成膜中に前記パーティクルが１００個／ウエハを越える
に至るまでのＳｉウエハ枚数を測定した。これらの測定
結果を表１〜表２に示した。These Ti targets 1 to 14 of the present invention and the conventional Ti target were loaded into a DC magnetron sputtering apparatus, output: 12 kW, atmosphere: Ar / N 2
= 1: 1 air flow, sputter pressure: 8 mTorr, sputter time: 2 minutes / wafer under the conditions of a wafer: diameter of 150 mm, a TiN film of 0.5 μm is repeatedly formed on the surface of a flat circular Si wafer. , The number of particles having a diameter of 0.2 μm or more existing in the TiN film formation is observed by irradiating a laser beam with a particle counter, and the number of the particles during the film formation exceeds 100 particles / wafer Si. The number of wafers was measured. The measurement results are shown in Tables 1 and 2.

【００１３】[0013]

【表１】 [Table 1]

【００１４】[0014]

【表２】 [Table 2]

【００１５】[0015]

【発明の効果】表１〜表２に示される結果から、ターゲ
ット基体の純Ｔｉ円板の非エロージョン部およびアルミ
ニウム合金製円板のスパッタ面側に溶射膜を形成した本
発明Ｔｉターゲット１〜１４は、溶射膜を形成しない従
来Ｔｉターゲットと比較して、直径：０．２μｍ以上の
パーティクルが１００個／ウエハを越えるに至るまでの
Ｓｉウエハ枚数が多いことが分かる。したがって、この
発明のＴｉターゲットは、１０ＫＷを越える苛酷な条件
での高出力スパッタでも成膜中にパーティクルが多発す
るのを長期に亘って抑制することができるので、マグネ
トロンスパッタリング装置の大型化および高性能化に十
分満足に対応でき、長い使用寿命を示すものである。From the results shown in Tables 1 and 2, the Ti targets 1 to 14 of the present invention in which the sprayed film is formed on the non-erosion portion of the pure Ti disk of the target substrate and on the sputtering surface side of the aluminum alloy disk. In comparison with the conventional Ti target in which the sprayed film is not formed, it is understood that the number of Si wafers until the number of particles having a diameter of 0.2 μm or more exceeds 100 / wafer is large. Therefore, the Ti target of the present invention can suppress the generation of many particles during film formation for a long period even in high power sputtering under severe conditions exceeding 10 KW, and thus the magnetron sputtering apparatus can be made large and high in size. It has a long service life and can fully satisfy performance improvement.

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】 Ｔｉターゲットのスパッタ面中央部およ
び外周縁部の非エロージョン部に溶射膜が形成されてい
ることを特徴とするマグネトロンスパッタリング用Ｔｉ
ターゲット。1. A Ti for magnetron sputtering, wherein a sprayed film is formed on a non-erosion portion of a central portion and an outer peripheral edge portion of a Ti target.
target. 【請求項２】 Ｔｉターゲットのスパッタ面中央部およ
び外周縁部の非エロージョン部並びにバッキングプレー
トのスパッタ面側に溶射膜が形成されていることを特徴
とするマグネトロンスパッタリング用Ｔｉターゲット。2. A Ti target for magnetron sputtering, characterized in that a sprayed film is formed on a non-erosion portion of a central portion and an outer peripheral edge portion of a Ti target and on a sputtering surface side of a backing plate. 【請求項３】 上記溶射膜は、Ｔｉ、Ｚｒ、Ｈｆ、Ｎ
ｂ、Ｔａ、Ｍｏ、Ｗ、Ａｌ、Ｃｕの内のいずれかの金属
溶射膜であることを特徴とする請求項１または２記載の
マグネトロンスパッタリング用Ｔｉターゲット。3. The sprayed film is formed of Ti, Zr, Hf, N.
The Ti target for magnetron sputtering according to claim 1 or 2, which is a metal sprayed film of any one of b, Ta, Mo, W, Al, and Cu. 【請求項４】 上記溶射膜は、ＴｉＣ、ＳｉＣ、ＷＣの
内のいずれかの炭化物溶射膜であることを特徴とする請
求項１または２記載のマグネトロンスパッタリング用Ｔ
ｉターゲット。4. The T for magnetron sputtering according to claim 1, wherein the sprayed film is a carbide sprayed film of any one of TiC, SiC and WC.
i target. 【請求項５】 上記溶射膜は、ＴｉＯ2 、Ａｌ2 Ｏ3 の
内のいずれかの酸化物溶射膜であることを特徴とする請
求項１または２記載のマグネトロンスパッタリング用Ｔ
ｉターゲット。5. The T for magnetron sputtering according to claim 1, wherein the sprayed film is an oxide sprayed film of any one of TiO 2 and Al 2 O 3.
i target.
JP33478395A 1995-12-22 1995-12-22 Titanium target for magnetron sputtering Withdrawn JPH09176842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33478395A JPH09176842A (en) 1995-12-22 1995-12-22 Titanium target for magnetron sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33478395A JPH09176842A (en) 1995-12-22 1995-12-22 Titanium target for magnetron sputtering

Publications (1)

Publication Number Publication Date
JPH09176842A true JPH09176842A (en) 1997-07-08

Family

ID=18281192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33478395A Withdrawn JPH09176842A (en) 1995-12-22 1995-12-22 Titanium target for magnetron sputtering

Country Status (1)

Country Link
JP (1) JPH09176842A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1314795A1 (en) * 2000-08-25 2003-05-28 Nikko Materials Company, Limited Sputtering target producing few particles
JP2007100218A (en) * 2006-12-18 2007-04-19 Toshiba Corp Component for vacuum film deposition system, vacuum film deposition system using the same, and target and backing plate
JP2017043812A (en) * 2015-08-28 2017-03-02 三菱マテリアル株式会社 Silicon target material for sputtering and method of forming crack prevention layer in the target

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1314795A1 (en) * 2000-08-25 2003-05-28 Nikko Materials Company, Limited Sputtering target producing few particles
EP1314795B1 (en) * 2000-08-25 2005-07-20 Nikko Materials Co., Ltd. Sputtering target producing few particles
JP2007100218A (en) * 2006-12-18 2007-04-19 Toshiba Corp Component for vacuum film deposition system, vacuum film deposition system using the same, and target and backing plate
JP2017043812A (en) * 2015-08-28 2017-03-02 三菱マテリアル株式会社 Silicon target material for sputtering and method of forming crack prevention layer in the target
WO2017038299A1 (en) * 2015-08-28 2017-03-09 三菱マテリアル株式会社 Sputtering silicon target material

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