JPS63162861A - Thin film deposition device - Google Patents

Thin film deposition device

Info

Publication number
JPS63162861A
JPS63162861A JP30795286A JP30795286A JPS63162861A JP S63162861 A JPS63162861 A JP S63162861A JP 30795286 A JP30795286 A JP 30795286A JP 30795286 A JP30795286 A JP 30795286A JP S63162861 A JPS63162861 A JP S63162861A
Authority
JP
Japan
Prior art keywords
thin film
vessel
electrodes
electrode
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30795286A
Other languages
Japanese (ja)
Inventor
Masato Kurita
昌人 栗田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP30795286A priority Critical patent/JPS63162861A/en
Publication of JPS63162861A publication Critical patent/JPS63162861A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent exfoliation of a thin film stuck to a sample surface and to prevent generation of defects in the thin film, by forming the exposed surface in a device for sputtering a target which is one of electrodes and depositing the thin film on the substrate surface to a rough surface having adequate surface roughness. CONSTITUTION:The electrodes 22, 23 are disposed to confront each other in a vacuum vessel 21. The metallic target 24 is mounted onto one electrode 22 and a wafer 25 is imposed on a sample base of the other electrode 23. Gaseous Ar is introduced into the vessel 21 and the inside of the vessel is evacuated to about 0.3Torr pressure. About 500V voltage is impressed between the electrodes 22 and 23 by a power supply 26. Plasma is thereby formed and the Ar ions therein sputter the above-mentioned target 24, thus depositing the thin film on the surface of the wafer 25. A deposition preventive plate 27 made of Al is fixed onto the exposed surface of the above-mentioned vessel 21 and the surfaces thereof is formed to >=12.58 surface roughness. The exfoliation of the thin film stuck to the plate 27 surface is thereby obviated and the contamination in the vessel 21 is prevented.

Description

【発明の詳細な説明】[Detailed description of the invention]

〔発明の目的〕 （産業上の利用分野） 本発明に、半・犀体用ｍ極材料形成長直に関するもので
、持に１ｔｌｆｋ形成室内の構造に関するものである。 （従来の波術〕 近年、半導ｔ＊渠積回路ぼ微爾比の一途？辿り。 最近でに最小寸法が１〜２[Object of the Invention] (Industrial Field of Application) The present invention relates to the growth of m-pole materials for semi-organisms and rhinoceros, and particularly to the structure inside the 1tlfk formation chamber. (Conventional wave technology) In recent years, semiconductor T* integrated circuits have been steadily increasing in size.

〔発明の構成〕[Structure of the invention]

（間頂点を解決するための手段） 上記目的を達成する為に本発明は装置の内壁の表面を粗
面化するよりにしたものである。 （作用） かかる構成により、膜のストレスを緩和し、幌のへガレ
を３さえることができる。 （実権列） 第２図に、本実施例のスパッタリング製置の断面を示し
ている。 ステ／レス製の真空容器２１内にＩ！！他２２．２３が
設けられ、一方にに金・萬１例えばモリブデンシリサイ
ド等のターゲット２４が取付けられている。 この両者が陰儀となる。他方、対向する陽極である試料
台２３には試料（ウェハー）２５が載置されている。＄
５にＨＡｒ等のガスが導入され、真空ポンプによりｖｆ
ｃ圧される。試料台２３及び容器２１は接地され、ＩＬ
極２２には１源２６によリー５ｏｏｖが印加された。容
器内の圧力にＱ、３Ｔｏｒｒである。生成したプラズマ
中のイオンがターゲット２４ｔ−スパッタリングし、試
料上に堆積させる。 容器内壁、電甑２２，２３には、アルミニウムよりなる
取りばずしｃｉＪ能な防着板２７がネジで取り付けられ
でいる。 第１図は、防着板２７の一部を拡大しｔものである。防
着板の長面ば１２．５Ｓ〜４００８．例えば２５Ｓの表
面粗さとした。ＳはＪＩＳ規格の曵面徂さを示す単位で
、２５Ｓとは粗面化された表面の高所と低所の差が１２
．５μｍであることを示しでいる。 第３図はモリブデンシリサイドを被着した場合の、本実
権列（ａ）と従来の列（ｂ）　’に比較しで示しｔもの
である。 弐面粗さ単位でＩＳＯものは、スパッタリング回数が増
え、付層するｉ４暎の厚さが厚くなると４膜かハガレで
くる。これがｔｔｆｆｌ形成室内のダストとなり基板に
付着し不良の原因となる。 しかし表面粗さ単位で２５前鎌のものはスパッ）タリン
グ回数が増えるにもかかわらず０．３μｍ以上のダスト
数が変化していなかった。アルミニウムの他、ステンレ
スを防着板に用いてもよい。 尚、表面粗さは検討の結果１２．５　Ｓ以上が／Ａガレ
防止上良好でありた。 本実施例では防着板を粗面化し之が、防着板を；ｉｔ、
ｒいないものに３いても、容器内を粗面化する事が有効
である。 又、被着材料としてモリブデンシリサイドの池、モリブ
デンやタングステン、タングステンシリサイド等地の高
融点金嘱又はそのシリサイドを用いることができる。 〔発明の効果〕 本発明【よれば電極形成室内の所定部分以外に設けられ
ｔ防着板等の表面に凹凸を付けることにより１付着した
薄膜の剥４を防止する。 しｔがってｔ咀形成室内を清浄に保つことができ欠陥の
少ない嗅を形成することが出来る。(Means for solving the gap) In order to achieve the above object, the present invention roughens the surface of the inner wall of the device. (Function) With this configuration, the stress on the membrane can be alleviated and the hood can be prevented from becoming bent. (Actual control column) FIG. 2 shows a cross section of the sputtering fabrication of this embodiment. I! in the vacuum container 21 made by Ste/Less! ! 22 and 23 are provided, and a target 24 made of gold or silicide, for example, molybdenum silicide, is attached to one side. Both of these become Yingi. On the other hand, a sample (wafer) 25 is placed on a sample stage 23 which is an opposing anode. $
A gas such as HAr is introduced into 5, and the vf is pumped by a vacuum pump.
C pressure is applied. The sample stage 23 and container 21 are grounded, and the IL
A voltage of 5 oov was applied to the pole 22 by a source 26 . The pressure inside the container is Q, 3 Torr. Ions in the generated plasma are sputtered onto the target 24t and deposited on the sample. A removable adhesion prevention plate 27 made of aluminum is attached to the inner wall of the container and the electric ovens 22 and 23 with screws. FIG. 1 is a partially enlarged view of the adhesion prevention plate 27. The long side of the anti-adhesion plate is 12.5S~4008. For example, the surface roughness was set to 25S. S is a unit that indicates the depth of the surface according to the JIS standard, and 25S means that the difference between the high and low points of the roughened surface is 12
．． It shows that it is 5 μm. FIG. 3 shows a comparison between the present actual column (a) and the conventional column (b)' when molybdenum silicide is deposited. For ISO products in terms of surface roughness, as the number of sputtering increases and the thickness of the applied layer increases, 4 or more films will peel off. This becomes dust in the ttffl formation chamber and adheres to the substrate, causing defects. However, in the surface roughness unit of 25 Maekama, the number of dust particles of 0.3 μm or more did not change despite the increase in the number of sputtering operations. In addition to aluminum, stainless steel may be used for the adhesion prevention plate. As a result of investigation, a surface roughness of 12.5 S or more was found to be good for preventing /A galling. In this example, the surface of the anti-adhesion plate was roughened;
Even if there is no such thing, it is effective to roughen the inside of the container. In addition, molybdenum silicide ponds, high melting point metals such as molybdenum, tungsten, tungsten silicide, etc., or silicides thereof can be used as the adhering material. [Effects of the Invention] According to the present invention, peeling off of the adhered thin film 4 is prevented by providing irregularities on the surface of the adhesion prevention plate, etc., provided outside the predetermined portion of the electrode forming chamber. Therefore, the inside of the mastication forming chamber can be kept clean, and the olfaction with fewer defects can be formed.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の詳細な説明する図、４２図トスパッタ
リ／グＡ装の図、第３図ぼ本発明の詳細な説明する為の
図である。 代理人　弁理士　　則　近　憲　佑 同　　　　　　　　竹　　花　　喜久男第　　１　　図 又、マツ７回捉 第　　３　図 、Ａｒ ↓ 第　　２　図FIG. 1 is a diagram for explaining the present invention in detail, FIG. 42 is a diagram of a sputtering/guage A system, and FIG. 3 is a diagram for explaining the present invention in detail. Agent Patent Attorney Noriyuki Ken Yudo Takehana Kikuo 1st figure, Matsu 7 times 3rd, Ar ↓ 2nd figure

Claims (1)

【特許請求の範囲】[Claims] 対向電極に電圧印加して、一方電極である金属ターゲッ
トをスパッタリングして他方電極の試料台上に載置され
た試料表面に金属膜を堆積させる薄膜堆積装置において
、装置内の露出面を１２．５Ｓ以上の粗面とした事を特
徴とする薄膜堆積装置。In a thin film deposition apparatus that applies a voltage to a counter electrode to sputter a metal target, which is one electrode, and deposits a metal film on the surface of a sample placed on a sample stage, which is the other electrode, the exposed surface inside the apparatus is 12. A thin film deposition apparatus characterized by having a rough surface of 5S or more.
JP30795286A 1986-12-25 1986-12-25 Thin film deposition device Pending JPS63162861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30795286A JPS63162861A (en) 1986-12-25 1986-12-25 Thin film deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30795286A JPS63162861A (en) 1986-12-25 1986-12-25 Thin film deposition device

Publications (1)

Publication Number Publication Date
JPS63162861A true JPS63162861A (en) 1988-07-06

Family

ID=17975144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30795286A Pending JPS63162861A (en) 1986-12-25 1986-12-25 Thin film deposition device

Country Status (1)

Country Link
JP (1) JPS63162861A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03166361A (en) * 1989-11-24 1991-07-18 Nippon Mining Co Ltd Thin film forming device
US5202008A (en) * 1990-03-02 1993-04-13 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5391275A (en) * 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
EP0853331A2 (en) * 1997-01-08 1998-07-15 Applied Materials, Inc. Back sputtering shield
US6045665A (en) * 1997-06-02 2000-04-04 Japan Energy Corporation Method of manufacturing member for thin-film formation apparatus and the member for the apparatus
WO2007065896A2 (en) * 2005-12-09 2007-06-14 International Business Machines Corporation Removable liners for charged particle beam systems
JP2009016524A (en) * 2007-07-04 2009-01-22 Rohm Co Ltd THIN FILM DEPOSITION APPARATUS, AND ZnO-BASED THIN FILM

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59222575A (en) * 1983-05-31 1984-12-14 Teijin Ltd Thin film forming device
JPS6156277A (en) * 1984-08-27 1986-03-20 Hitachi Ltd Film forming device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59222575A (en) * 1983-05-31 1984-12-14 Teijin Ltd Thin film forming device
JPS6156277A (en) * 1984-08-27 1986-03-20 Hitachi Ltd Film forming device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03166361A (en) * 1989-11-24 1991-07-18 Nippon Mining Co Ltd Thin film forming device
JP2663025B2 (en) * 1989-11-24 1997-10-15 株式会社ジャパンエナジー Thin film forming equipment
US5202008A (en) * 1990-03-02 1993-04-13 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5391275A (en) * 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
EP0853331A3 (en) * 1997-01-08 2000-10-11 Applied Materials, Inc. Back sputtering shield
EP0853331A2 (en) * 1997-01-08 1998-07-15 Applied Materials, Inc. Back sputtering shield
US6045665A (en) * 1997-06-02 2000-04-04 Japan Energy Corporation Method of manufacturing member for thin-film formation apparatus and the member for the apparatus
US6319419B1 (en) 1997-06-02 2001-11-20 Japan Energy Corporation Method of manufacturing member for thin-film formation apparatus and the member for the apparatus
WO2007065896A2 (en) * 2005-12-09 2007-06-14 International Business Machines Corporation Removable liners for charged particle beam systems
WO2007065896A3 (en) * 2005-12-09 2007-09-07 Ibm Removable liners for charged particle beam systems
US7462845B2 (en) 2005-12-09 2008-12-09 International Business Machines Corporation Removable liners for charged particle beam systems
US7897939B2 (en) 2005-12-09 2011-03-01 International Business Machines Corporation Removable liners for charged particle beam systems
US7897940B2 (en) 2005-12-09 2011-03-01 International Business Machines Corporation Removable liners for charged particle beam systems
JP2009016524A (en) * 2007-07-04 2009-01-22 Rohm Co Ltd THIN FILM DEPOSITION APPARATUS, AND ZnO-BASED THIN FILM

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