JPH09152455A - Internal defect detector and method thereof for laminated ceramic capacitor - Google Patents
Internal defect detector and method thereof for laminated ceramic capacitorInfo
- Publication number
- JPH09152455A JPH09152455A JP7314150A JP31415095A JPH09152455A JP H09152455 A JPH09152455 A JP H09152455A JP 7314150 A JP7314150 A JP 7314150A JP 31415095 A JP31415095 A JP 31415095A JP H09152455 A JPH09152455 A JP H09152455A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic capacitor
- current
- internal defect
- detected
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Electric Properties And Detecting Electric Faults (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は積層セラミックコン
デンサ内の異物混入、ピンホールなどの内部欠陥を検出
する際に利用される積層セラミックコンデンサの内部欠
陥検出装置およびその方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an internal defect detecting device for a laminated ceramic capacitor and a method for detecting an internal defect such as a foreign substance mixed in a multilayer ceramic capacitor or a pinhole.
【０００２】[0002]
【従来の技術】従来、積層セラミックコンデンサの内部
欠陥を非破壊で検出あるいはスクリーニングするための
方法としては、例えば特開昭６１−９６４７５号公報に
記載されたものが知られている。2. Description of the Related Art Conventionally, as a method for nondestructively detecting or screening an internal defect of a monolithic ceramic capacitor, for example, a method described in JP-A-61-96475 is known.
【０００３】この同公報に提案された方法は、積層セラ
ミックコンデンサをその最高使用温度を越える温度に加
熱した状態で、直流電圧を絶縁破壊を生じる電圧より低
い電圧領域において徐々に昇圧させながら印加し、漏れ
電流が急激に増加したことを検出し、その積層セラミッ
クコンデンサを除去する検出あるいはスクリーニングを
行う方法である。In the method proposed in this publication, a DC voltage is applied while gradually increasing the DC voltage in a voltage range lower than a voltage causing dielectric breakdown in a state in which the multilayer ceramic capacitor is heated to a temperature exceeding its maximum operating temperature. The method is to detect a sudden increase in leakage current and perform detection or screening to remove the monolithic ceramic capacitor.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら前記従来
の方法では、高温に加熱する装置が必要であり、１回の
試験に１〜２分程度の時間を必要とするために生産工程
中において全数検査試験を行うことが困難であるという
課題を有している。However, in the above-mentioned conventional method, a device for heating to a high temperature is required, and since one test requires about 1 to 2 minutes, 100% inspection is performed during the production process. There is a problem that it is difficult to perform a test.
【０００５】本発明は従来のこのような課題を解決しよ
うとするもので、積層セラミックコンデンサの内部欠陥
の検出あるいはスクリーニングを短時間に行い、生産工
程中で全数検査試験を実現することができる積層セラミ
ックコンデンサの内部欠陥検出装置およびその方法を提
供することを目的とするものである。The present invention is intended to solve such a conventional problem, and is capable of detecting or screening internal defects of a monolithic ceramic capacitor in a short time and realizing a 100% inspection test in a production process. An object of the present invention is to provide an internal defect detection device for a ceramic capacitor and a method thereof.
【０００６】[0006]
【課題を解決するための手段】前記課題を解決するため
に本発明は、積層セラミックコンデンサに短時間定格電
圧の数倍〜数十倍の高電圧を印加して、積層セラミック
コンデンサに流れる充電電流の挙動不安定などの異常を
検出するようにしたものである。In order to solve the above-mentioned problems, the present invention applies a charging current flowing through a multilayer ceramic capacitor by applying a high voltage of several times to several tens of times the rated voltage for a short time to the multilayer ceramic capacitor. It is designed to detect anomalies such as unstable behavior.
【０００７】この本発明によれば、積層セラミックコン
デンサの内部欠陥の検出あるいはスクリーニングを短時
間に行い、生産工程中で全数検査試験を行うことが可能
となる。According to the present invention, it is possible to detect or screen the internal defects of the monolithic ceramic capacitor in a short time, and to perform a 100% inspection test during the production process.
【０００８】[0008]
【発明の実施の形態】本発明の請求項１に記載の発明
は、被検査体となる積層セラミックコンデンサに電流を
印加して充電を行う電源部と、この充電された被検査体
の電流を検出する電流検出部と、この検出した電流の変
化を検出する電流変化検出部と、この電流変化のピーク
値を検出するピーク検出部と、この検出したピーク値を
あらかじめ定めた規定値と比較して判定する比較判定部
からなる構成としたものであり、短時間で正確に内部欠
陥を検出することができるという作用を有する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention relates to a power supply section for applying a current to a monolithic ceramic capacitor, which is an object to be inspected, for charging, and a current of the charged object to be inspected. The current detecting section for detecting, the current change detecting section for detecting the change in the detected current, the peak detecting section for detecting the peak value of the current change, and the detected peak value are compared with a predetermined specified value. The internal defect can be accurately detected in a short time.
【０００９】請求項２に記載の発明は、積層セラミック
コンデンサに短時間定格電圧を越える電圧を印加し、積
層セラミックコンデンサに流れる充電電流における挙動
異常電流の電流成分、電流変化、電流変化のピーク値を
検出し、規定のピーク値と前記検出電流変化のピーク値
を比較判定して積層セラミックコンデンサの内部欠陥の
有無を検出する請求項１記載の積層セラミックコンデン
サの内部欠陥検出装置を用いた積層セラミックコンデン
サの内部欠陥検出方法というものであり、短時間で正確
に内部欠陥を検出することができるという作用を有す
る。According to a second aspect of the present invention, a voltage exceeding a rated voltage is applied to the monolithic ceramic capacitor for a short time, and a current component of a behavior abnormal current in a charging current flowing in the monolithic ceramic capacitor, a current change, and a peak value of the current change. 2. A multilayer ceramic using the internal defect detecting device for a multilayer ceramic capacitor according to claim 1, wherein the presence or absence of an internal defect of the multilayer ceramic capacitor is detected by detecting the internal temperature of the multilayer ceramic capacitor by comparing the specified peak value with the peak value of the detected current change. This is a method for detecting an internal defect of a capacitor, and has an effect that an internal defect can be accurately detected in a short time.
【００１０】以下、本発明の一実施の形態について、図
面を用いて説明する。図１は同実施の形態における積層
セラミックコンデンサの内部欠陥検出装置の構成を示す
ブロック図、図２は検出あるいはスクリーニングすべき
内部欠陥を有する積層セラミックコンデンサの構造を示
す断面図、図３は同積層セラミックコンデンサの内部の
等価回路図、図４は内部欠陥を有する積層セラミックコ
ンデンサの充電電流の状態を示す波形図である。An embodiment of the present invention will be described below with reference to the drawings. 1 is a block diagram showing the structure of an internal defect detection device for a multilayer ceramic capacitor according to the same embodiment, FIG. 2 is a sectional view showing the structure of a multilayer ceramic capacitor having an internal defect to be detected or screened, and FIG. 3 is the same multilayer. FIG. 4 is a waveform diagram showing the state of the charging current of the multilayer ceramic capacitor having an internal defect.
【００１１】まず、一般的に積層セラミックコンデンサ
の構造は図２に示すような構造であり、同図において、
１１は積層セラミックコンデンサの本体、１２と１３は
導電体材料で成る内部電極であり、本体１１の両側面に
その端面部が交互に突出するように誘電体層１４の間に
介在している。そして１５と１６は導電体金属材料で成
る外部電極であり、本体１１の側面に形成され、前記内
部電極１３，１２にそれぞれ接続されている。First, the structure of a monolithic ceramic capacitor is generally as shown in FIG.
Reference numeral 11 is a main body of the monolithic ceramic capacitor, and 12 and 13 are internal electrodes made of a conductive material, which are interposed between the dielectric layers 14 so that the end faces of the main body 11 alternately project. External electrodes 15 and 16 made of a conductive metal material are formed on the side surface of the main body 11 and are connected to the internal electrodes 13 and 12, respectively.
【００１２】１７はボイドと呼ばれている内部欠陥であ
り、積層セラミックコンデンサの製造時に不純物などの
異物が混入することなどにより形成される。このボイド
１７は通常導電性の異物であるため、この部分の内部電
極１２，１３間で他の部分に対し絶縁の低下が起こって
いる。良品の積層セラミックコンデンサに定格電圧の数
倍〜数十倍の高電圧を印加しても、短時間なら絶縁破壊
は起こらないが、ボイド１７が存在するとその耐電圧が
低下した部分の誘電体層１４が耐電圧に達すると絶縁破
壊が発生する。Numeral 17 is an internal defect called a void, which is formed by mixing foreign matter such as impurities during the manufacture of the monolithic ceramic capacitor. Since the void 17 is usually a conductive foreign substance, the insulation between the internal electrodes 12 and 13 in this portion is deteriorated with respect to other portions. Even if a high voltage of several times to several tens of times the rated voltage is applied to a non-defective monolithic ceramic capacitor, dielectric breakdown does not occur for a short time, but if there are voids 17, the dielectric layer of the part whose dielectric strength has decreased When 14 reaches the withstand voltage, dielectric breakdown occurs.
【００１３】その状況を定性的に説明すると、図３に示
すように積層セラミックコンデンサ１の内部等価回路
は、抵抗２１とコンデンサ２２が直列接続されたものを
並列に多数接続された回路で表すことができる。To qualitatively explain the situation, as shown in FIG. 3, the internal equivalent circuit of the monolithic ceramic capacitor 1 is represented by a circuit in which a resistor 21 and a capacitor 22 are connected in series and are connected in parallel. You can
【００１４】抵抗２１とコンデンサ２２が直列接続され
たものが並列に多数接続された回路では、コンデンサ２
２の一部が絶縁破壊を起こした場合、絶縁破壊を起こし
た部分が全体に対して小さいと、直列に接続された抵抗
２１のために全体に印加されている電圧は変化しない
が、電流は絶縁破壊を起こしたコンデンサ２２に直列接
続された抵抗２１に相当する分だけ変化することにな
る。In a circuit in which a large number of resistors 21 and capacitors 22 connected in series are connected in parallel, the capacitor 2
When a part of 2 causes a dielectric breakdown, if the part that causes a dielectric breakdown is small with respect to the whole, the voltage applied to the whole does not change due to the resistor 21 connected in series, but the current does not change. It changes by an amount corresponding to the resistance 21 connected in series to the capacitor 22 that has caused the dielectric breakdown.
【００１５】本発明はこの電流変化を検出して比較判定
し、制御するようにしたものであり、図１にそのブロッ
ク図を示す。同図において、１は検査試験される試料の
積層セラミックコンデンサであり、片端に過電流による
装置の破壊を防止する電流制限素子２（例えば抵抗やＦ
ＥＴあるいは定電流ダイオードなど）とスイッチ３を経
由して高電圧印加用電源４に接続されており、そして積
層セラミックコンデンサ１の他端は検出部１０に接続さ
れている。The present invention is designed to detect this current change, make a comparison decision, and control it. FIG. 1 is a block diagram thereof. In the figure, reference numeral 1 is a multilayer ceramic capacitor of a sample to be inspected and tested, and a current limiting element 2 (for example, a resistor or F
ET or constant current diode) and a switch 3 to connect to a high-voltage applying power source 4, and the other end of the monolithic ceramic capacitor 1 is connected to a detecting unit 10.
【００１６】検出部１０は電流検出部５、交流成分検出
部６、ピーク検出部７、比較判定部８、そして装置全体
を操作制御する制御部９から構成されている。The detection unit 10 is composed of a current detection unit 5, an AC component detection unit 6, a peak detection unit 7, a comparison determination unit 8 and a control unit 9 which controls the operation of the entire apparatus.
【００１７】次に動作について説明する。放電済みある
いは充電されていない積層セラミックコンデンサ１を接
続し、スイッチ３を閉じて積層セラミックコンデンサ１
に定格電圧の数倍〜数十倍（例えば１０倍）の電圧を短
時間（例えば数１０〜数１００ｍｓ）印加して充電を開
始すると、積層セラミックコンデンサ１には電流制限素
子２に制限されて充電電流が流れるとともに、積層セラ
ミックコンデンサ１の両端の充電電圧が上昇していく。Next, the operation will be described. Connect the monolithic ceramic capacitor 1 that has not been discharged or charged, and close the switch 3 to close the monolithic ceramic capacitor 1.
When a voltage several times to several tens times (for example, ten times) the rated voltage is applied for a short time (for example, several tens to several 100 ms) to start charging, the multilayer ceramic capacitor 1 is limited by the current limiting element 2. As the charging current flows, the charging voltage across the monolithic ceramic capacitor 1 rises.
【００１８】この充電電圧がボイド１７などによる内部
欠陥部分の絶縁耐圧の値に達したときに局部的な絶縁破
壊が発生し、図４に示すように充電電流波形２５におい
て挙動異常波形２６が発生する。When this charging voltage reaches the value of the withstand voltage of the internal defect portion due to the void 17 or the like, a local dielectric breakdown occurs, and a behavior abnormal waveform 26 is generated in the charging current waveform 25 as shown in FIG. To do.
【００１９】そして充電電流の挙動異常波形２６を検出
するために、電流検出部５で電流成分の検出を行い、交
流成分検出部６で電流の変化を検出し、ピーク検出部７
で電流変化のピーク値を検出し、比較判定部８で電流変
化のピーク値を規定値と比較判定し、規定値以上であれ
ばその試料の積層セラミックコンデンサ１にはボイド１
７などの内部欠陥を有するものと判定し、制御部９によ
りカウントや試料の積層セラミックコンデンサ１の除去
などの装置の操作制御を行うものである。In order to detect the behavior abnormal waveform 26 of the charging current, the current detecting section 5 detects the current component, the AC component detecting section 6 detects the change in the current, and the peak detecting section 7
The peak value of the current change is detected by, and the comparison / judgment unit 8 compares the peak value of the current with a specified value. If the peak value is equal to or more than the specified value, void 1 is added to the multilayer ceramic capacitor 1 of the sample.
It is determined that an internal defect such as 7 is present, and the control unit 9 controls the operation of the apparatus such as counting and removing the laminated ceramic capacitor 1 of the sample.
【００２０】[0020]
【発明の効果】以上のように本発明によれば、積層セラ
ミックコンデンサの充電電流における挙動異常を検出す
ることにより、積層セラミックコンデンサの微小な内部
欠陥の検出あるいはスクリーニングを短時間に行い、生
産工程中で全数検査試験を容易に行うことが可能となる
効果が得られる。As described above, according to the present invention, by detecting the behavior abnormality in the charging current of the monolithic ceramic capacitor, minute internal defects of the monolithic ceramic capacitor can be detected or screened in a short time, and the production process Among them, the effect that it becomes possible to easily carry out the 100% inspection test is obtained.
【図１】本発明の一実施の形態における積層セラミック
コンデンサ内部欠陥検出装置の構成を示すブロック図FIG. 1 is a block diagram showing the configuration of a laminated ceramic capacitor internal defect detection device according to an embodiment of the present invention.
【図２】同内部欠陥を有する積層セラミックコンデンサ
の構造を示す断面図FIG. 2 is a sectional view showing the structure of a monolithic ceramic capacitor having the same internal defect.
【図３】同積層セラミックコンデンサの内部の等価回路
図FIG. 3 is an equivalent circuit diagram inside the monolithic ceramic capacitor.
【図４】同内部欠陥を有する積層セラミックコンデンサ
の充電電流の状態を示す波形図FIG. 4 is a waveform chart showing a state of a charging current of the monolithic ceramic capacitor having the same internal defect.
１ 積層セラミックコンデンサ ２ 電流制限素子 ３ スイッチ ４ 高電圧印加用電源 ５ 電流検出部 ６ 交流成分検出部 ７ ピーク検出部 ８ 比較判定部 ９ 制御部 １０ 検出部 １１ 本体 １２ 内部電極 １３ 内部電極 １４ 誘電体層 １５ 外部電極 １６ 外部電極 １７ ボイド ２１ 抵抗 ２２ コンデンサ ２５ 充電電流波形 ２６ 挙動異常波形 1 Multilayer Ceramic Capacitor 2 Current Limiting Element 3 Switch 4 High Voltage Application Power Supply 5 Current Detection Section 6 AC Component Detection Section 7 Peak Detection Section 8 Comparison Judgment Section 9 Control Section 10 Detection Section 11 Main Body 12 Internal Electrode 13 Internal Electrode 14 Dielectric Layer 15 External electrode 16 External electrode 17 Void 21 Resistance 22 Capacitor 25 Charging current waveform 26 Behavior abnormal waveform
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山口 明彦 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 本田 一夫 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Akihiko Yamaguchi 1006 Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Kazuo Honda, 1006 Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd.
Claims (2)
サに電流を印加して充電を行う電源部と、この充電され
た被検査体の電流を検出する電流検出部と、この検出し
た電流の変化を検出する電流変化検出部と、この電流変
化のピーク値を検出するピーク検出部と、この検出した
ピーク値をあらかじめ定めた規定値と比較して判定する
比較判定部からなる積層セラミックコンデンサの内部欠
陥検出装置。1. A power supply section for applying a current to a multilayer ceramic capacitor to be an object to be inspected for charging, a current detecting section for detecting the current of the charged inspected object, and a change in the detected current. Internal defect of a laminated ceramic capacitor consisting of a current change detection unit for detection, a peak detection unit for detecting the peak value of this current change, and a comparison / determination unit for comparing and comparing the detected peak value with a predetermined value. Detection device.
電圧を越える電圧を印加し、積層セラミックコンデンサ
に流れる充電電流における挙動異常電流の電流成分、電
流変化、電流変化のピーク値を検出し、規定のピーク値
と前記検出電流変化のピーク値を比較判定して積層セラ
ミックコンデンサの内部欠陥の有無を検出する請求項１
記載の積層セラミックコンデンサの内部欠陥検出装置を
用いた積層セラミックコンデンサの内部欠陥検出方法。2. A voltage exceeding a rated voltage for a short time is applied to a monolithic ceramic capacitor, and a current component of a behavior abnormal current in a charging current flowing in the monolithic ceramic capacitor, a current change, and a peak value of the current change are detected, and a specified peak is detected. 2. The presence or absence of an internal defect in the monolithic ceramic capacitor is detected by comparing and judging the value and the peak value of the change in the detected current.
An internal defect detection method for a multilayer ceramic capacitor using the internal defect detection device for a multilayer ceramic capacitor described in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7314150A JPH09152455A (en) | 1995-12-01 | 1995-12-01 | Internal defect detector and method thereof for laminated ceramic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7314150A JPH09152455A (en) | 1995-12-01 | 1995-12-01 | Internal defect detector and method thereof for laminated ceramic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09152455A true JPH09152455A (en) | 1997-06-10 |
Family
ID=18049838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7314150A Pending JPH09152455A (en) | 1995-12-01 | 1995-12-01 | Internal defect detector and method thereof for laminated ceramic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09152455A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009099653A (en) * | 2007-10-15 | 2009-05-07 | Panasonic Corp | Inspecting method for metallized film capacitor |
| JP2020064975A (en) * | 2018-10-17 | 2020-04-23 | 株式会社村田製作所 | Method for inspecting laminated ceramic capacitor and method for manufacturing laminated ceramic capacitor |
| WO2023074627A1 (en) * | 2021-10-26 | 2023-05-04 | Ｙｕｒｉホールディングス株式会社 | Capacitor inspection method and inspection device used in capacitor inspection method |
-
1995
- 1995-12-01 JP JP7314150A patent/JPH09152455A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009099653A (en) * | 2007-10-15 | 2009-05-07 | Panasonic Corp | Inspecting method for metallized film capacitor |
| JP2020064975A (en) * | 2018-10-17 | 2020-04-23 | 株式会社村田製作所 | Method for inspecting laminated ceramic capacitor and method for manufacturing laminated ceramic capacitor |
| KR20200043279A (en) * | 2018-10-17 | 2020-04-27 | 가부시키가이샤 무라타 세이사쿠쇼 | Method for inspecting multilayer ceramic capacitor and method for manufacturing multilayer ceramic capacitor |
| WO2023074627A1 (en) * | 2021-10-26 | 2023-05-04 | Ｙｕｒｉホールディングス株式会社 | Capacitor inspection method and inspection device used in capacitor inspection method |
| JP2023064684A (en) * | 2021-10-26 | 2023-05-11 | Ｙｕｒｉホールディングス株式会社 | Capacitor inspection method and inspection device using the same |
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