JPH0714742A - Screening method for ceramic electronic component - Google Patents
Screening method for ceramic electronic componentInfo
- Publication number
- JPH0714742A JPH0714742A JP5150302A JP15030293A JPH0714742A JP H0714742 A JPH0714742 A JP H0714742A JP 5150302 A JP5150302 A JP 5150302A JP 15030293 A JP15030293 A JP 15030293A JP H0714742 A JPH0714742 A JP H0714742A
- Authority
- JP
- Japan
- Prior art keywords
- electronic component
- ceramic electronic
- circuit
- screening
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000012216 screening Methods 0.000 title claims abstract description 30
- 230000002159 abnormal effect Effects 0.000 claims abstract description 22
- 239000003985 ceramic capacitor Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 1
- 238000004904 shortening Methods 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 16
- 238000009413 insulation Methods 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、セラミック電子部品の
スクリーニング方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a screening method for ceramic electronic parts.
【０００２】[0002]
【従来の技術】従来の技術について、積層セラミックコ
ンデンサのスクリーニング方法を例にとって説明する。2. Description of the Related Art A conventional technique will be described by taking a screening method for a laminated ceramic capacitor as an example.
【０００３】昨今、電子機器の小型化、高性能化にとも
なって積層チップコンデンサは小型化、大容量化への要
望がますます増大している。Recently, with the miniaturization and high performance of electronic equipment, demands for miniaturization and large capacity of multilayer chip capacitors are increasing more and more.
【０００４】従来、積層セラミックコンデンサの電圧印
加状態で絶縁抵抗が劣化する試料のスクリーニングは、
次のようなステップで行われている。Conventionally, screening of a sample in which the insulation resistance is deteriorated in a voltage applied state of a laminated ceramic capacitor is
The steps are as follows:
【０００５】まず積層セラミックコンデンサをキューリ
ー点以上の温度に保った恒温槽中に保持し、積層セラミ
ックコンデンサの外部電極からフッソ樹脂の外皮を施し
た導線を介して、恒温槽の外にあるスキャニングスイッ
チに接続する。次に直流電流計を内蔵したデジタル抵抗
計を接続する。その後、積層セラミックコンデンサに直
流電圧を印加する。直流電圧は、４Ｖ、８Ｖ、１６Ｖ、
３２Ｖ、６４Ｖの５種類印加し、印加してからある測定
時間（ｔ）までの絶縁抵抗（ＩＲ）の変化を記録する。
測定条件は、 １）測定時間＝０．１乃至３２秒 ２）測定時間比（測定間隔）＝１．４以上 ３）電界強度＝０．１乃至６Ｖ／μｍ ４）電界強度比＝１．４以上 である。このようにして測定した結果の各直流電圧につ
いてLog IR -Log t の関係で整理する。このとき、電界
が増すに従って、絶縁抵抗の対数の経過時間の対数に対
する変化率が変化しない又は増大するロットや、あるい
は減少するロットが発生する。前者については、寿命の
平均値が著しく短く、後者については長い。このことを
利用し、ロット間の信頼性を保証している（特開平４−
３２４６０８）。First, the monolithic ceramic capacitor is held in a thermostatic chamber maintained at a temperature higher than the Curie point, and the scanning switch provided outside the thermostatic chamber is connected to the external electrode of the monolithic ceramic capacitor through a lead wire coated with a fluorine resin. Connect to. Then connect a digital ohmmeter with a built-in DC ammeter. Then, a DC voltage is applied to the laminated ceramic capacitor. DC voltage is 4V, 8V, 16V,
5 types of 32V and 64V are applied, and the change of the insulation resistance (IR) from the application to a certain measurement time (t) is recorded.
The measurement conditions are as follows: 1) measurement time = 0.1 to 32 seconds 2) measurement time ratio (measurement interval) = 1.4 or more 3) electric field strength = 0.1 to 6 V / μm 4) electric field strength ratio = 1.4 That is all. The direct current voltages measured in this way are summarized in terms of Log IR -Log t. At this time, as the electric field increases, a lot in which the change rate of the logarithm of the insulation resistance with respect to the logarithm of the elapsed time does not change or increases, or a lot decreases. For the former, the average lifespan is significantly shorter and for the latter it is longer. Utilizing this fact, the reliability between lots is guaranteed (Japanese Patent Laid-Open No. Hei 4-
324608).
【０００６】また、個々の積層セラミックコンデンサの
信頼性を保証する方法としては、出荷前に個々について
絶縁抵抗を測定し、ある設定値以下の絶縁抵抗有するも
のを取り除くことにより保証している。As a method for guaranteeing the reliability of each monolithic ceramic capacitor, the insulation resistance is measured for each individual before shipment and the one having an insulation resistance equal to or lower than a certain set value is removed.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記の
各方法では、依然積層セラミックコンデンサの信頼性に
問題があり、又、スクリーニング時間がかかり、作業効
率が悪いばかりでなく、スクリーニング精度も悪いとい
った課題を有している。However, in each of the above-mentioned methods, there is still a problem in the reliability of the monolithic ceramic capacitor, and it takes a lot of time for screening, so that not only the working efficiency is poor but also the screening accuracy is poor. have.
【０００８】そこで本発明は、上記従来の課題を考慮
し、個々の積層セラミックコンデンサの信頼性を短時間
に、精度よく保証することができるスクリーニング方法
を提供することを目的とするものである。In view of the above-mentioned conventional problems, the present invention has an object to provide a screening method capable of accurately and reliably guaranteeing the reliability of each monolithic ceramic capacitor.
【０００９】[0009]
【課題を解決するための手段】本発明は、セラミック層
を挟んで一対の金属層を形成してなるセラミック電子部
品に直流電圧を印加する回路と、充電過程での異常電流
を検知する回路とを備えるセラミック電子部品のスクリ
ーニング方法である。According to the present invention, there is provided a circuit for applying a DC voltage to a ceramic electronic component having a pair of metal layers sandwiching a ceramic layer, and a circuit for detecting an abnormal current during a charging process. A method for screening a ceramic electronic component comprising:
【００１０】また、上記回路に加えて漏洩電流値を検知
する回路とを備えるセラミック電子部品のスクリーニン
グ方法である。Further, the present invention is a method for screening a ceramic electronic component, which comprises a circuit for detecting a leakage current value in addition to the above circuit.
【００１１】[0011]
【作用】セラミック電子部品において信頼性が劣化する
場合、劣化箇所の多くはセラミック層中に存在するボイ
ドである。したがって、セラミック層中のボイドの存在
を予め知ることでセラミック電子部品のスクリーニング
は可能である。When the reliability of the ceramic electronic component is deteriorated, most of the deteriorated parts are voids existing in the ceramic layer. Therefore, it is possible to screen ceramic electronic components by knowing the existence of voids in the ceramic layer in advance.
【００１２】本発明は、金属層に挟まれたセラミック層
中に存在するボイドを検出する方法として個々のセラミ
ック電子部品について直流電圧下での充電曲線を測定
し、充電過程に発生する異常電流（ボイドでの放電現
象）を検知し、異常電流が発生した試料を除去すること
でスクリーニングを行うものである。The present invention is a method of detecting voids existing in a ceramic layer sandwiched between metal layers. The charging curve of each ceramic electronic component under a DC voltage is measured, and an abnormal current (charging process) occurs. The discharge phenomenon in the void) is detected, and the sample in which the abnormal current is generated is removed to perform the screening.
【００１３】しかしながら、高電圧を印加するとセラミ
ック層が絶縁破壊する場合もある。この場合には、異常
電流を検知した後に、漏洩電流値を測定することで絶縁
破壊した試料を除去することができる。However, when a high voltage is applied, the ceramic layer may cause dielectric breakdown. In this case, after the abnormal current is detected, the leak current value can be measured to remove the sample having the dielectric breakdown.
【００１４】以上のように本発明のスクリーニング方法
は、充電過程における異常電流を検知することで信頼性
試験で劣化する試料を除去することができる。たとえス
クリーニング時に試料を劣化させたとしても漏洩電流値
を測定することで劣化させた試料を除去することができ
る。As described above, the screening method of the present invention can remove the sample that deteriorates in the reliability test by detecting the abnormal current in the charging process. Even if the sample is deteriorated at the time of screening, the deteriorated sample can be removed by measuring the leakage current value.
【００１５】また本発明のスクリーニング方法は、個々
のセラミック電子部品について信頼性試験で劣化する試
料を短時間で、確実に除去できる。Further, the screening method of the present invention can surely remove a sample which deteriorates in the reliability test of each ceramic electronic component in a short time.
【００１６】[0016]
【実施例】以下、本発明の実施例について図面を参照し
ながら説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１７】（実施例１）本実施例は、積層セラミック
コンデンサのスクリーニングについて説明する。図１
は、本発明の第１の実施例にかかるスクリーニングに用
いる回路図である。ここで、１は積層セラミックコンデ
ンサ、２は導線、３は抵抗、４は直流電源、５はオシロ
スコープ、６はスイッチを示す。(Embodiment 1) In this embodiment, screening of a laminated ceramic capacitor will be described. Figure 1
FIG. 3 is a circuit diagram used for screening according to the first embodiment of the present invention. Here, 1 is a monolithic ceramic capacitor, 2 is a conducting wire, 3 is a resistor, 4 is a DC power supply, 5 is an oscilloscope, and 6 is a switch.
【００１８】本実施例に用いた積層セラミックコンデン
サの斜視図を図２に示す。７はパラジウムからなる内部
電極、８はチタン酸バリウムを主成分とするセラミック
誘電体、９は銀からなる外部電極である。本実施例で
は、内部電極層は４層からなり、隣接する内部電極間の
セラミック誘電体層の厚みは、異なる３種類の試料を用
いている。すなわち、５μｍ、１０μｍ、２０μｍであ
る。A perspective view of the monolithic ceramic capacitor used in this embodiment is shown in FIG. Reference numeral 7 is an internal electrode made of palladium, 8 is a ceramic dielectric containing barium titanate as a main component, and 9 is an external electrode made of silver. In this embodiment, four internal electrode layers are used, and three types of samples having different ceramic dielectric layers between adjacent internal electrodes are used. That is, it is 5 μm, 10 μm, and 20 μm.
【００１９】次に、図１の回路によって行われるスクリ
ーニング手順について説明する。まず図１に示す回路を
作製し、上述の３種類の積層セラミックコンデンサにつ
いて１００Ｖ、２００Ｖ、３００Ｖ、４００Ｖ、５００
Ｖの直流電圧を１秒間印加し、印加直後に発生する充電
挙動をオシロスコープ５を用いて読み取る。その時、多
くの試料については図３（ａ）にみられる正常電流を示
すが、電圧によっては図３（ｂ）に示す異常電流がみら
れる。異常電流は、１．０×１０-8Ａ以上かつ半価幅
０．００５ｓｅｃ以上であることが多い。Next, a screening procedure performed by the circuit of FIG. 1 will be described. First, the circuit shown in FIG. 1 was produced, and 100 V, 200 V, 300 V, 400 V, 500 were applied to the above three types of monolithic ceramic capacitors.
A DC voltage of V is applied for 1 second, and the charging behavior that occurs immediately after the application is read using the oscilloscope 5. At that time, for many samples, the normal current shown in FIG. 3A is shown, but depending on the voltage, the abnormal current shown in FIG. 3B is seen. The abnormal current is often 1.0 × 10 −8 A or more and a half value width of 0.005 sec or more.
【００２０】次に、本実施例の結果の正しさを確認する
ため、異常電流を示した試料と正常電流を示した試料の
それぞれについての、次に述べるような信頼性試験を行
った。（表１）にその結果を示す。Next, in order to confirm the correctness of the result of the present embodiment, the reliability test as described below was conducted for each of the sample showing an abnormal current and the sample showing a normal current. The results are shown in (Table 1).
【００２１】[0021]
【表１】 [Table 1]
【００２２】すなわち、図１に示す回路で、各条件で１
０００個のスクリーニングを実施した後、信頼性試験を
実施した。信頼性試験条件は、８５℃、８５％Ｒ．Ｈ．
の雰囲気で６４Ｖ印加である。また１０００時間の試験
後、絶縁抵抗を測定し、試験前の絶縁抵抗と比較して絶
縁抵抗が１／１０以下に低下したものを信頼性試験によ
る劣化とみなし、劣化数を数えている。That is, in the circuit shown in FIG.
A reliability test was performed after 000 screenings were performed. The reliability test conditions are 85 ° C. and 85% R.V. H.
64V is applied in the atmosphere. Further, after the test for 1000 hours, the insulation resistance was measured, and when the insulation resistance was reduced to 1/10 or less as compared with the insulation resistance before the test, it was regarded as deterioration by the reliability test, and the number of deteriorations was counted.
【００２３】（表１）から明らかなように、異常電流が
発生した試料の全部が、信頼性試験において劣化してい
るのに対して、正常電流を示した試料については高寿命
であるといえる。但し、５μｍ品において４００Ｖおよ
び５００Ｖを印加した場合には、正常電流を示したにも
関わらず、信頼性試験での劣化が激しい。そこで、試験
後、信頼性試験で劣化した試料の内部構造を観察してみ
ると、異常電流が発生した試料の劣化箇所は、内部電極
間のセラミック誘電体層に存在するボイドであり、他
方、正常電流が発生した試料の劣化箇所は、セラミック
層自身の劣化であることが確認された。As is clear from (Table 1), all the samples in which the abnormal current is generated are deteriorated in the reliability test, whereas the samples showing the normal current can be said to have a long life. . However, when 400 V and 500 V were applied to the 5 μm product, the deterioration in the reliability test was severe even though the normal current was shown. Therefore, after the test, when observing the internal structure of the sample deteriorated in the reliability test, the deteriorated part of the sample in which the abnormal current occurred is a void existing in the ceramic dielectric layer between the internal electrodes, while It was confirmed that the deteriorated portion of the sample in which the normal current was generated was the deterioration of the ceramic layer itself.
【００２４】したがって、直流高電圧下での充電曲線を
測定し、充電過程に発生する異常電流を検知すること
で、信頼性試験でボイドに起因して劣化する試料を除去
することができる。さらに、内部電極間のセラミック層
自身の劣化の点については、次の第２実施例で述べる。Therefore, by measuring the charging curve under a high DC voltage and detecting the abnormal current generated in the charging process, it is possible to remove the sample which is deteriorated due to the void in the reliability test. Furthermore, the point of deterioration of the ceramic layer itself between the internal electrodes will be described in the next second embodiment.
【００２５】（実施例２）図４は、本発明の第２の実施
例にかかるスクリーニングに用いる回路図である。ここ
で、図１と異なるのは、図１の回路に加えて微小電流計
１０が接続されている点である。(Embodiment 2) FIG. 4 is a circuit diagram used for screening according to a second embodiment of the present invention. Here, what is different from FIG. 1 is that a minute ammeter 10 is connected in addition to the circuit of FIG.
【００２６】本実施例には、内部電極間のセラミック層
の厚みが５μｍの試料を用いている。上記、正常な電流
を示したにも関わらず、劣化があった場合である。印加
電圧、印加時間の範囲は、第１の実施例と同様である。
（表２）は、図４の回路を用いてスクリーニングを行
い、異常電流が発生した試料および正常電流が発生した
試料の中で、漏洩電流が１．０×１０-6Ａ以上検出され
た試料と電流が１．０×１０-6Ａ未満の試料に対する試
料の信頼性試験結果を示している。In this example, a sample in which the thickness of the ceramic layer between the internal electrodes is 5 μm is used. The above is the case where there is deterioration despite the normal current being shown. The range of applied voltage and application time is the same as in the first embodiment.
(Table 2) shows a sample in which a leakage current of 1.0 × 10 −6 A or more is detected among the samples in which the abnormal current is generated and the samples in which the normal current is generated by screening using the circuit of FIG. And the reliability test result of the sample for the current of less than 1.0 × 10 −6 A.
【００２７】[0027]
【表２】 [Table 2]
【００２８】異常電流が発生した試料および漏洩電流が
１．０×１０-6Ａ以上検出された試料のすべてが信頼性
試験後劣化しているのに対して、漏洩電流が１．０×１
０-6Ａ未満の試料については全く劣化していない。従っ
て、漏洩電流を測定する本実施例による結果と、信頼性
試験結果とが全く一致し、本実施例の結果が正しいこと
がわかる。The samples in which the abnormal current is generated and the samples in which the leakage current is 1.0 × 10 −6 A or more are all deteriorated after the reliability test, whereas the leakage current is 1.0 × 1.
The samples of less than 0 -6 A are not deteriorated at all. Therefore, the result of the present example for measuring the leakage current and the result of the reliability test completely coincide with each other, which shows that the result of the present example is correct.
【００２９】以上のように直流高電圧下での充電曲線を
測定し、充電過程に発生する異常電流を検知し、その後
漏洩電流値を検知することにより積層セラミックコンデ
ンサのスクリーニングを信頼性高く行うことが可能であ
る。As described above, the charging curve under high DC voltage is measured, the abnormal current generated in the charging process is detected, and then the leakage current value is detected, so that the multilayer ceramic capacitor can be screened with high reliability. Is possible.
【００３０】なお、上記実施例は、積層セラミックコン
デンサについて示したが、セラミック層を挟んで一対の
金属層を形成してなるすべてのセラミック電子部品につ
いて、本発明のスクリーニング方法が適用できることは
言うまでもない。In addition, although the above-mentioned embodiment shows the monolithic ceramic capacitor, it goes without saying that the screening method of the present invention can be applied to all ceramic electronic parts formed by forming a pair of metal layers with the ceramic layers sandwiched therebetween. .
【００３１】また、本実施例では抵抗部の両端の電流変
化をオシロスコープを用いて検知しているが、この回路
を無抵抗電流計で置き換えても同様の測定ができる。Further, in the present embodiment, the current change at both ends of the resistance portion is detected by using an oscilloscope, but the same measurement can be performed by replacing this circuit with a non-resistance ammeter.
【００３２】また、漏洩電流検知回路１０を使用せず、
オシロスコープ５のみて、抵抗３を流れる漏洩電流を検
知することもできる。この場合は、オシロスコープ５
が、漏洩電流検知回路を兼ねている場合である。Further, without using the leakage current detection circuit 10,
Only the oscilloscope 5 can detect the leak current flowing through the resistor 3. In this case, the oscilloscope 5
However, it also serves as a leakage current detection circuit.
【００３３】[0033]
【発明の効果】以上述べたところから明らかなように、
本発明は、セラミック層を挟んで一対の金属層を形成し
てなるセラミック電子部品のスクリーニング方法におい
て、個々の部品について確実に、短時間でスクリーニン
グすることができるので、生産性において優れた効果を
実現できる。As is apparent from the above description,
INDUSTRIAL APPLICABILITY The present invention is a method of screening a ceramic electronic component in which a pair of metal layers are formed with a ceramic layer sandwiched between them, so that individual components can be reliably and quickly screened. realizable.
【図１】本発明の第１の実施例にかかるスクリーニング
に用いる回路図である。FIG. 1 is a circuit diagram used for screening according to a first embodiment of the present invention.
【図２】積層セラミックコンデンサの斜視図である。FIG. 2 is a perspective view of a monolithic ceramic capacitor.
【図３】第１の実施例における、充電時にみられる正常
電流図と、充電時にみられる異常電流図である。FIG. 3 is a normal current diagram observed during charging and an abnormal current diagram observed during charging in the first embodiment.
【図４】本発明の第２の実施例にかかるスクリーニング
に用いる回路図である。FIG. 4 is a circuit diagram used for screening according to a second embodiment of the present invention.
１ セラミック電子部品 ２ 導線 ３ 抵抗 ４ 直流電源 ５ オシロスコープ ６ スイッチ ７ 微小電流計 1 Ceramic Electronic Parts 2 Conductor 3 Resistance 4 DC Power Supply 5 Oscilloscope 6 Switch 7 Micro Ammeter
フロントページの続き (72)発明者 井垣 恵美子 大阪府門真市大字門真1006番地 松下電器 産業株式会社内Front page continuation (72) Inventor Emiko Igaki 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (5)
してなるセラミック電子部品に直流電圧を印加する回路
と、充電過程での異常電流を検知する回路とを備え、そ
の異常電流が検知された場合そのセラミック電子部品の
品質が悪いものとすることを特徴とするセラミック電子
部品のスクリーニング方法。1. A circuit for applying a DC voltage to a ceramic electronic component comprising a pair of metal layers sandwiching a ceramic layer and a circuit for detecting an abnormal current during a charging process, the abnormal current being detected The method for screening a ceramic electronic component is characterized in that the quality of the ceramic electronic component is deteriorated when the above is performed.
してなるセラミック電子部品に直流電圧を印加する回路
と、充電過程での異常電流を検知する回路と、漏洩電流
値を検知する回路とを備え、前記異常電流は検知されな
いが、所定の大きさの漏洩電流が検知された場合そのセ
ラミック電子部品の品質が悪いものとすることを特徴と
するセラミック電子部品のスクリーニング方法。2. A circuit for applying a DC voltage to a ceramic electronic component having a pair of metal layers sandwiching a ceramic layer, a circuit for detecting an abnormal current during a charging process, and a circuit for detecting a leakage current value. The method for screening a ceramic electronic component according to claim 1, wherein the abnormal current is not detected, but the quality of the ceramic electronic component is poor when a leakage current of a predetermined magnitude is detected.
ンデンサであることを特徴とする請求項１又は２記載の
セラミック電子部品のスクリーニング方法。3. The method for screening a ceramic electronic component according to claim 1, wherein the ceramic electronic component is a monolithic ceramic capacitor.
-8Ａ以上かつ半価幅０．００５ｓｅｃ以上の異常電流を
検知できる精度を有することを特徴とする請求項１〜請
求項３記載のいずれかのセラミック電子部品のスクリー
ニング方法。4. A circuit for detecting an abnormal current is 1.0 × 10.
The method for screening a ceramic electronic component according to any one of claims 1 to 3, which has an accuracy of detecting an abnormal current of -8 A or more and a half-value width of 0.005 sec or more.
０-6Ａ以上の漏洩電流を検知できる精度を有することを
特徴とする請求項２又は４記載のセラミック電子部品の
スクリーニング方法。5. A circuit for detecting a leakage current value is 1.0 × 1.
The method for screening a ceramic electronic component according to claim 2 or 4, wherein the method has a precision capable of detecting a leakage current of 0 -6 A or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5150302A JP2994911B2 (en) | 1993-06-22 | 1993-06-22 | Screening method for ceramic electronic components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5150302A JP2994911B2 (en) | 1993-06-22 | 1993-06-22 | Screening method for ceramic electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0714742A true JPH0714742A (en) | 1995-01-17 |
| JP2994911B2 JP2994911B2 (en) | 1999-12-27 |
Family
ID=15494039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5150302A Expired - Lifetime JP2994911B2 (en) | 1993-06-22 | 1993-06-22 | Screening method for ceramic electronic components |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2994911B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000046820A1 (en) * | 1999-02-04 | 2000-08-10 | Matsushita Electric Industrial Co., Ltd. | Method of screening laminated ceramic capacitor |
| US6233002B1 (en) | 1997-09-25 | 2001-05-15 | Nec Corporation | Earphone system with operability improved and terminal equipment system with the earphone system |
| JP2010199465A (en) * | 2009-02-27 | 2010-09-09 | Murata Mfg Co Ltd | Sorting method and sorting apparatus of ceramic capacitor |
-
1993
- 1993-06-22 JP JP5150302A patent/JP2994911B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6233002B1 (en) | 1997-09-25 | 2001-05-15 | Nec Corporation | Earphone system with operability improved and terminal equipment system with the earphone system |
| WO2000046820A1 (en) * | 1999-02-04 | 2000-08-10 | Matsushita Electric Industrial Co., Ltd. | Method of screening laminated ceramic capacitor |
| US6437579B1 (en) | 1999-02-04 | 2002-08-20 | Matsushita Electric Industrial Co., Ltd. | Screening method for a multi-layered ceramic capacitor |
| JP2010199465A (en) * | 2009-02-27 | 2010-09-09 | Murata Mfg Co Ltd | Sorting method and sorting apparatus of ceramic capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2994911B2 (en) | 1999-12-27 |
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