JPH0864910A - Semiconductor light emitting element - Google Patents
Semiconductor light emitting elementInfo
- Publication number
- JPH0864910A JPH0864910A JP19833694A JP19833694A JPH0864910A JP H0864910 A JPH0864910 A JP H0864910A JP 19833694 A JP19833694 A JP 19833694A JP 19833694 A JP19833694 A JP 19833694A JP H0864910 A JPH0864910 A JP H0864910A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- layer
- substrate
- light emitting
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体発光素子に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device.
【０００２】[0002]
【従来の技術】直接遷移型のバンド構造を有するＺｎＳ
ｅやＧａＮは、青色あるいは紫色の光を発する半導体レ
ーザ装置、発光ダイオード等の半導体発光素子の材料と
して有望である。しかしながら、ＺｎＳｅやＧａＮから
なる基板が存在しないため、このような半導体発光素子
を形成する際には他の材料からなる基板を用いる必要が
ある。2. Description of the Related Art ZnS having a direct transition type band structure
e and GaN are promising as materials for semiconductor light emitting elements such as semiconductor laser devices and light emitting diodes that emit blue or violet light. However, since there is no substrate made of ZnSe or GaN, it is necessary to use a substrate made of another material when forming such a semiconductor light emitting device.
【０００３】図６は従来のＺｎＳｅ系半導体レーザ装置
の構造を示す断面図である。図６の半導体レーザ装置は
Ｍ．Ａ．Ｈａａｓｅ ｅｔ ａｌ．，Ａｐｐｌ．Ｐｈｙ
ｓ．Ｌｅｔｔ．５９（１１），９ Ｓｅｐｔｅｍｂｅｒ
１９９１，ｐｐ．１２７２−１２７３に開示されてい
る。FIG. 6 is a sectional view showing the structure of a conventional ZnSe semiconductor laser device. The semiconductor laser device shown in FIG. A. Haase et al. , Appl. Phy
s. Lett. 59 (11), 9 September
1991, pp. 1272-1273.
【０００４】図６において、ｎ−ＧａＡｓ基板２１上
に、ｎ+ −ＺｎＳｅコンタクト層２２、ｎ−ＺｎＳＳｅ
クラッド層２３、ＣｄＺｎＳｅ／ＺｎＳｅ量子井戸活性
層２４、ｐ−ＺｎＳＳｅクラッド層２５、ｐ+ −ＺｎＳ
ｅコンタクト層２６およびポリイミド層２７が順に形成
されている。ポリイミド層２７の中央部にはストライプ
状の開口部が形成されている。ポリイミド層２７の上面
およびｐ+ −ＺｎＳｅコンタクト層２６の中央部の上面
にはＡｕ電極２８が形成され、ｎ−ＧａＡｓ基板２１の
下面にはＩｎ電極２９が形成されている。In FIG. 6, an n + -ZnSe contact layer 22 and an n-ZnSSe are formed on an n-GaAs substrate 21.
Cladding layer 23, CdZnSe / ZnSe quantum well active layer 24, p-ZnSSe cladding layer 25, p + -ZnS
The e-contact layer 26 and the polyimide layer 27 are sequentially formed. A stripe-shaped opening is formed in the center of the polyimide layer 27. An Au electrode 28 is formed on the upper surface of the polyimide layer 27 and the central upper surface of the p + -ZnSe contact layer 26, and an In electrode 29 is formed on the lower surface of the n-GaAs substrate 21.
【０００５】このように、図６の半導体レーザ装置は、
ＣｄＺｎＳｅ／ＺｎＳｅ量子井戸活性層２４をｎ−Ｚｎ
ＳＳｅクラッド層２３およびｐ−ＺｎＳＳｅクラッド層
２５で挟んだダブルヘテロ構造のｐｎ接合を有する。As described above, the semiconductor laser device of FIG.
The CdZnSe / ZnSe quantum well active layer 24 is n-Zn.
It has a pn junction having a double hetero structure sandwiched between the SSe cladding layer 23 and the p-ZnSSe cladding layer 25.
【０００６】一方、図７は従来のＧａＮ系発光ダイオー
ドの構造を示す断面図である。図７の発光ダイオードは
日経マイクロデバイス１９９４年２月号の第９２頁〜第
９３頁に開示されている。On the other hand, FIG. 7 is a sectional view showing the structure of a conventional GaN-based light emitting diode. The light emitting diode of FIG. 7 is disclosed on pages 92 to 93 of the February 1994 issue of Nikkei Microdevices.
【０００７】図７において、サファイア（Ａｌ2 Ｏ3 ）
基板３１上に、ＧａＮバッファ層３２、ｎ−ＧａＮ層３
３、ｎ−ＡｌＧａＮクラッド層３４、ＩｎＧａＮ活性層
３５、ｐ−ＡｌＧａＮクラッド層３６およびｐ−ＧａＮ
層３７が順に形成されている。ｎ−ＧａＮ層３３の上部
領域およびｎ−ＡｌＧａＮクラッド層３４からｐ−Ｇａ
Ｎ層３７までの幅は、サファイア基板３１からｎ−Ｇａ
Ｎ層３３の下部領域までの幅よりも狭く形成されてい
る。ｐ−ＧａＮ層３７の上面に正電極３８が形成され、
ｎ−ＧａＮ層３３の上面に負電極３９が形成されてい
る。In FIG. 7, sapphire (Al 2 O 3 )
The GaN buffer layer 32 and the n-GaN layer 3 are formed on the substrate 31.
3, n-AlGaN clad layer 34, InGaN active layer 35, p-AlGaN clad layer 36 and p-GaN
Layer 37 is formed in sequence. From the upper region of the n-GaN layer 33 and the n-AlGaN cladding layer 34 to the p-Ga
The width up to the N layer 37 is from the sapphire substrate 31 to n-Ga.
It is formed narrower than the width to the lower region of the N layer 33. A positive electrode 38 is formed on the upper surface of the p-GaN layer 37,
The negative electrode 39 is formed on the upper surface of the n-GaN layer 33.
【０００８】図７の発光ダイオードは、ＩｎＧａＮ活性
層３５をｎ−ＡｌＧａＮクラッド層３４およびｐ−Ａｌ
ＧａＮクラッド層３６で挟んだダブルヘテロ構造のｐｎ
接合を有し、青色の光を効率良く発生することができ
る。In the light emitting diode shown in FIG. 7, the InGaN active layer 35 is formed on the n-AlGaN cladding layer 34 and the p-Al layer.
Double hetero structure pn sandwiched between GaN cladding layers 36
It has a junction and can efficiently generate blue light.
【０００９】[0009]
【発明が解決しようとする課題】表１に各種材料の格子
定数および熱膨張係数を示す。Table 1 shows lattice constants and thermal expansion coefficients of various materials.
【００１０】[0010]
【表１】 [Table 1]
【００１１】表１から明らかなように、ＧａＡｓの格子
定数はＺｎＳｅの格子定数に近くなっているが、Ｇａ
Ｎ、サファイアおよびＳｉＣの格子定数は互いに異なっ
ている。As is clear from Table 1, the lattice constant of GaAs is close to that of ZnSe, but Ga
The lattice constants of N, sapphire and SiC are different from each other.
【００１２】図６のＺｎＳｅ系半導体レーザ装置では、
ＺｎＳｅに近い格子定数を有するＧａＡｓ基板を用いて
おり、クラッド層の材料としてＺｎＳＳｅ混晶を用いて
いる。この半導体レーザ装置においては、ある温度、例
えば成長温度でＺｎＳＳｅ混晶を用いると格子整合がと
れるが、他の温度、例えば室温にすると格子整合がとれ
ず、転位が発生してしまうという問題がある。In the ZnSe based semiconductor laser device of FIG.
A GaAs substrate having a lattice constant close to that of ZnSe is used, and a ZnSSe mixed crystal is used as a material for the cladding layer. In this semiconductor laser device, when ZnSSe mixed crystal is used at a certain temperature, for example, growth temperature, lattice matching can be achieved, but at other temperature, for example, room temperature, lattice matching cannot be achieved and dislocation occurs. .
【００１３】一方、図７のＧａＮ系発光ダイオードで
は、表１から明らかなように、ＧａＮの格子定数がサフ
ァイアの格子定数と大きく異なっているので、サファイ
ア上に成長したＧａＮに転位が発生する。On the other hand, in the GaN-based light-emitting diode of FIG. 7, as is clear from Table 1, the lattice constant of GaN is greatly different from the lattice constant of sapphire, so dislocations occur in GaN grown on sapphire.
【００１４】これらの結果、上記の従来の半導体レーザ
装置および発光ダイオードに通電すると、転位が増大
し、素子寿命が短くなるという問題があった。本発明の
目的は、転位の発生が防止された半導体発光素子を提供
することである。As a result, there is a problem that dislocations increase and the device life is shortened when the above conventional semiconductor laser device and light emitting diode are energized. An object of the present invention is to provide a semiconductor light emitting device in which dislocations are prevented from occurring.
【００１５】[0015]
【課題を解決するための手段】本発明に係る半導体発光
素子は、ＳｉＣ基板上にＳｉＣからなる第１のクラッド
層、ＩｎＧａＮからなる活性層およびＳｉＣからなる第
２のクラッド層が順に形成されたものである。In a semiconductor light emitting device according to the present invention, a first clad layer made of SiC, an active layer made of InGaN and a second clad layer made of SiC are sequentially formed on a SiC substrate. It is a thing.
【００１６】活性層は、Ｉｎ組成の小さい複数のＩｎＧ
ａＮ層とＩｎ組成の大きい１以上のＩｎＧａＮ層とが交
互に積層された多層膜により構成されてもよい。The active layer is composed of a plurality of InG having a small In composition.
The aN layer and one or more InGaN layers having a large In composition may be alternately laminated to form a multilayer film.
【００１７】[0017]
【作用】本発明に係る半導体発光素子においては、Ｓｉ
Ｃ基板上にＳｉＣからなる第１のクラッド層が形成され
ているので、格子定数および熱膨張係数が互いに一致し
ている。したがって、比較的膜厚の厚いクラッド層が基
板に対して広い温度範囲で格子整合しているので、クラ
ッド層に転位が発生しない。In the semiconductor light emitting device according to the present invention, Si
Since the first cladding layer made of SiC is formed on the C substrate, the lattice constant and the thermal expansion coefficient match each other. Therefore, since the clad layer having a relatively large film thickness is lattice-matched with the substrate in a wide temperature range, dislocation does not occur in the clad layer.
【００１８】また、活性層が直接遷移型のバンド構造を
有するＩｎＧａＮにより形成されているので、青色ある
いは紫色の光を効率良く発することができる。活性層の
膜厚はクラッド層の膜厚に比べて薄くてよいので、活性
層の格子定数がクラッド層の格子定数と異なっても、格
子が歪むだけで活性層での転位の発生が防止される。Further, since the active layer is made of InGaN having a direct transition type band structure, blue or violet light can be efficiently emitted. Since the thickness of the active layer may be smaller than that of the cladding layer, even if the lattice constant of the active layer is different from that of the cladding layer, dislocation of the active layer is prevented only by straining the lattice. It
【００１９】特に、Ｉｎ組成の小さいＩｎＧａＮ層はＳ
ｉＣに近い格子定数を有し、Ｉｎ組成の大きいＩｎＧａ
Ｎ層はＳｉＣに比べて小さいバンドギャップを有する。
したがって、活性層をＩｎ組成の小さいＩｎＧａＮ層お
よびＩｎ組成の大きいＩｎＧａＮ層の多層膜で構成すれ
ば、Ｉｎ組成の小さいＩｎＧａＮ層によりクラッド層と
の格子整合をとり、かつＩｎ組成の大きいＩｎＧａＮ層
によりクラッド層とのバンドギャップの差を大きくする
ことができる。それにより、転位の発生を防止しつつ、
光の閉じ込めを良くするために活性層の膜厚を厚くする
ことができる。In particular, the InGaN layer having a small In composition is S
InGa having a large In composition with a lattice constant close to iC
The N layer has a band gap smaller than that of SiC.
Therefore, if the active layer is composed of a multilayer film of an InGaN layer having a small In composition and an InGaN layer having a large In composition, the InGaN layer having a small In composition provides lattice matching with the cladding layer and the InGaN layer having a large In composition is used. The difference in band gap from the cladding layer can be increased. Thereby, while preventing the occurrence of dislocations,
The thickness of the active layer can be increased to improve the light confinement.
【００２０】[0020]
【実施例】図１は本発明の第１の実施例による発光ダイ
オードの構造を示す断面図である。1 is a sectional view showing the structure of a light emitting diode according to a first embodiment of the present invention.
【００２１】図１において、ｎ−ＳｉＣ基板１上に、ｎ
−ＳｉＣクラッド層２、Ｉｎ1-x Ｇａx Ｎ（０＜ｘ＜
１）活性層３およびｐ−ＳｉＣクラッド層４が順に形成
されている。ｐ−ＳｉＣクラッド層４の上面の中央部に
Ａｌ電極５が形成され、ｎ−ＳｉＣ基板１の下面の中央
部にＮｉ電極６が形成されている。In FIG. 1, n on the n-SiC substrate 1
-SiC cladding layer 2, In 1-x Ga x N (0 <x <
1) The active layer 3 and the p-SiC cladding layer 4 are sequentially formed. An Al electrode 5 is formed in the center of the upper surface of the p-SiC cladding layer 4, and a Ni electrode 6 is formed in the center of the lower surface of the n-SiC substrate 1.
【００２２】このように、図１の発光ダイオードは、直
接遷移型のＩｎ1-x Ｇａx Ｎ活性層３を活性層３よりバ
ンドギャップが大きくかつ屈折率の小さいｎ−ＳｉＣク
ラッド層２およびｐ−ＳｉＣクラッド層４で挟んだダブ
ルヘテロ構造のｐｎ接合を有している。As described above, in the light emitting diode of FIG. 1, the direct transition type In 1-x Ga x N active layer 3 has the n-SiC cladding layers 2 and p having a band gap larger than that of the active layer 3 and a refractive index smaller than that of the active layer 3. -It has a pn junction of a double hetero structure sandwiched between -SiC cladding layers 4.
【００２３】表２に各種材料のバンドギャップ、線熱膨
張係数、格子定数および格子不整合を示す。格子不整合
は、ＧａＮに対する格子定数のずれの割合（％）を示し
ている。Table 2 shows band gaps, linear thermal expansion coefficients, lattice constants and lattice mismatches of various materials. The lattice mismatch indicates the ratio (%) of the deviation of the lattice constant with respect to GaN.
【００２４】[0024]
【表２】 [Table 2]
【００２５】本実施例では、特にｎ−ＳｉＣ基板１、ｎ
−ＳｉＣクラッド層２およびｐ−ＳｉＣクラッド層４の
材料として、２．９ｅＶのバンドギャップを有する６Ｈ
−ＳｉＣ、３．２ｅＶのバンドギャップを有する４Ｈ−
ＳｉＣまたは３．３ｅＶのバンドギャップを有する２Ｈ
−ＳｉＣを用いる。表２から明らかなように、６Ｈ−Ｓ
ｉＣ、４Ｈ−ＳｉＣおよび２Ｈ−ＳｉＣの格子定数はい
ずれも３．０８Åであり、ＧａＮの格子定数３．１６Å
に近く、格子不整合が２．６％と小さくなっている。In this embodiment, in particular, the n-SiC substrates 1, n
-SiC cladding layer 2 and p-SiC cladding layer 4 are made of 6H having a band gap of 2.9 eV.
-SiC, 4H-having a band gap of 3.2 eV-
SiC or 2H with a bandgap of 3.3 eV
-Using SiC. As is clear from Table 2, 6H-S
The lattice constants of iC, 4H-SiC and 2H-SiC are all 3.08Å, and the lattice constant of GaN is 3.16Å
, And the lattice mismatch is as small as 2.6%.
【００２６】図２にＩｎ1-x Ｇａx ＮにおけるＧａ組成
ｘとバンドギャップとの関係を示す。図２から明らかな
ように、Ｉｎ1-x Ｇａx ＮのバンドギャップはＧａ組成
ｘが０から１．０まで増加するにしたがって２．０ｅＶ
から３．４ｅＶまで変化する。FIG. 2 shows the relationship between the Ga composition x and the band gap in In 1-x Ga x N. As is clear from FIG. 2, the band gap of In 1-x Ga x N is 2.0 eV as the Ga composition x increases from 0 to 1.0.
To 3.4 eV.
【００２７】ｎ−ＳｉＣクラッド層２およびｐ−ＳｉＣ
クラッド層４の材料として２Ｈ−ＳｉＣを用いた場合に
は、Ｉｎ1-x Ｇａx Ｎのバンドギャップが３．３よりも
小さくなるように、Ｇａ組成ｘを０．９よりも小さく設
定する。また、４Ｈ−ＳｉＣを用いた場合には、Ｉｎ
1-x Ｇａx Ｎのバンドギャップが３．２ｅＶよりも小さ
くなるようにＧａ組成ｘを０．９以下に設定し、６Ｈ−
ＳｉＣを用いた場合には、Ｉｎ1-x Ｇａx Ｎのバンドギ
ャップが２．９ｅＶよりも小さくなるようにＧａ組成ｘ
を０．７以下に設定する。N-SiC cladding layer 2 and p-SiC
When 2H—SiC is used as the material of the cladding layer 4, the Ga composition x is set to be smaller than 0.9 so that the band gap of In 1-x Ga x N is smaller than 3.3. When 4H-SiC is used, In
The Ga composition x is set to 0.9 or less so that the band gap of 1-x Ga x N is smaller than 3.2 eV, and 6H-
When SiC is used, the Ga composition x is set so that the band gap of In 1-x Ga x N becomes smaller than 2.9 eV.
Is set to 0.7 or less.
【００２８】表３にｎ−ＳｉＣクラッド層２およびｐ−
ＳｉＣクラッド層４の成膜条件およびＩｎ1-x Ｇａx Ｎ
活性層３の成膜条件を示す。Table 3 shows the n-SiC cladding layer 2 and p-
Film forming conditions of the SiC clad layer 4 and In 1-x Ga x N
The conditions for forming the active layer 3 are shown below.
【００２９】[0029]
【表３】 [Table 3]
【００３０】表３に示すように、ｎ−ＳｉＣクラッド層
２およびｐ−ＳｉＣクラッド層４の成膜には、ＣＶＤ
（化学的気相成長）法を用い、原料ガスとしてＳｉ
Ｈ4 、Ｃ3Ｈ8 、ＣＨ4 およびＨ2 を用いて基板温度を
１５００℃以下に設定する。ｎ−ＳｉＣクラッド層２の
成膜の際には、Ｎ2 およびＮＨ3 を用いてｎ型不純物と
してＮをドープする。ｐ−ＳｉＣクラッド層４の成膜の
際には、ＴＭＡ〔トリメチルアルミニウム；（ＣＨ3 ）
3 Ａｌ〕を用いてｐ型不純物としてＡｌをドープする。As shown in Table 3, CVD is used to form the n-SiC cladding layer 2 and the p-SiC cladding layer 4.
(Chemical vapor deposition) method is used, and Si is used as a source gas.
The substrate temperature is set to 1500 ° C. or lower using H 4 , C 3 H 8 , CH 4 and H 2 . When the n-SiC cladding layer 2 is formed, N 2 and NH 3 are used to dope N as an n-type impurity. When forming the p-SiC cladding layer 4, TMA [trimethylaluminum; (CH 3 )
3 Al] is used to dope Al as a p-type impurity.
【００３１】Ｉｎ1-x Ｇａx Ｎ活性層３の成膜には、Ｃ
ＶＤ法を用い、原料ガスとしてＴＭＧ〔トリメチルガリ
ウム（ＣＨ3 ）3 Ｇａ〕、ＴＭＩ〔トリメチルインジウ
ム；（ＣＨ3 ）3 Ｉｎ〕、ＴＭＡ、ＮＨ3 、Ｎ2 および
Ｈ2 を用い、基板温度を７５０〜８５０℃に設定する。
また、ＳｉＨ4 を用いてｎ型不純物としてＳｉをドープ
してもよく、Ｃｐ2 Ｍｇ〔ビス（シクロペンタジエニ
ル）マグネシウム；Ｍｇ（Ｃ5 Ｈ5 ）2 〕、ＤＥＺ〔ジ
エチルジンク；（Ｃ2 Ｈ5 ）2 Ｚｎ〕等を用いてｐ型不
純物としてＭｇ、Ｚｎ、Ｃｄ等をドープしてもよい。To form the In 1-x Ga x N active layer 3, C
Using the VD method, using TMG [trimethylgallium (CH 3 ) 3 Ga], TMI [trimethylindium; (CH 3 ) 3 In], TMA, NH 3 , N 2 and H 2 as source gases, and using a substrate temperature of 750. Set to ~ 850 ° C.
Also, SiH 4 may be used to dope Si as an n-type impurity, and Cp 2 Mg [bis (cyclopentadienyl) magnesium; Mg (C 5 H 5 ) 2 ], DEZ [diethyl zinc; (C 2 H 5 ) 2 Zn] or the like may be used to dope Mg, Zn, Cd or the like as a p-type impurity.
【００３２】図１の発光ダイオードにおいては、１μｍ
以上の膜厚を有するクラッド層２，４がｎ−ＳｉＣ基板
１と同じＳｉＣにより形成されるので、広い温度範囲で
格子整合がとれ、転位が発生しない。また、Ｉｎ1-x Ｇ
ａx Ｎ活性層３の膜厚は数百Å（例えば５００Å）程度
に設定されるので、Ｉｎ1-x Ｇａx Ｎの格子定数がｎ−
ＳｉＣ基板１の格子定数に一致していなくても、歪みを
吸収する。したがって、転位の発生が防止される。In the light emitting diode of FIG. 1, 1 μm
Since the clad layers 2 and 4 having the above film thicknesses are formed of the same SiC as the n-SiC substrate 1, lattice matching can be achieved in a wide temperature range and dislocations do not occur. Also, In 1-x G
Since the film thickness of the a x N active layer 3 is set to several hundred Å (for example, 500 Å), the lattice constant of In 1-x Ga x N is n−.
Even if the lattice constant of the SiC substrate 1 does not match, the strain is absorbed. Therefore, generation of dislocations is prevented.
【００３３】このように、図１の発光ダイオードにおい
ては、広い温度範囲でｎ−ＳｉＣクラッド層２、Ｉｎ
1-x Ｇａx Ｎ活性層３およびｐ−ＳｉＣクラッド層４に
転位が発生せず、ｎ−ＳｉＣ基板１上に高品質な結晶層
が得られるため、発光効率が高く、かつ信頼性が高い。As described above, in the light emitting diode of FIG. 1, the n-SiC cladding layer 2 and the In layer have a wide temperature range.
Dislocations do not occur in the 1-x Ga x N active layer 3 and the p-SiC cladding layer 4, and a high-quality crystal layer can be obtained on the n-SiC substrate 1, so that the luminous efficiency is high and the reliability is high. .
【００３４】特に、ｎ−ＳｉＣクラッド層２およびｐ−
ＳｉＣクラッド層４として４Ｈ−ＳｉＣを用いた場合に
は、バンドギャップが約３．２ｅＶであるので、Ｉｎ
1-x Ｇａx Ｎ活性層３は約３ｅＶ（波長で４１５ｎｍ付
近）までの短波長光を効率良く発生する。In particular, the n-SiC cladding layer 2 and p-
When 4H—SiC is used as the SiC clad layer 4, the band gap is about 3.2 eV, so In
The 1-x Ga x N active layer 3 efficiently generates short-wavelength light up to about 3 eV (wavelength near 415 nm).
【００３５】図３は本発明の第２の実施例による半導体
レーザ装置の構造を示す断面図である。図３において、
ｎ−ＳｉＣ基板１１上に、ｎ−ＳｉＣクラッド層１２、
Ｉｎ1- x Ｇａx Ｎ活性層１３、ｐ−ＳｉＣクラッド層１
４、およびＳｉＯ2 、ＳｉＮ等の絶縁層１５が順に形成
されている。絶縁層１５の中央部にはストライプ状の開
口部が形成されている。絶縁層１５の上面およびｐ−Ｓ
ｉＣクラッド層１４の中央部の上面にＡｌ電極１６が形
成され、ｎ−ＳｉＣ基板１１の下面にＮｉ電極１７が形
成されている。FIG. 3 is a sectional view showing the structure of a semiconductor laser device according to the second embodiment of the present invention. In FIG.
On the n-SiC substrate 11, the n-SiC clad layer 12,
In 1- x Ga x N active layer 13, p-SiC cladding layer 1
4 and an insulating layer 15 made of SiO 2 , SiN or the like are sequentially formed. A stripe-shaped opening is formed in the center of the insulating layer 15. The upper surface of the insulating layer 15 and p-S
An Al electrode 16 is formed on the upper surface of the center of the iC cladding layer 14, and a Ni electrode 17 is formed on the lower surface of the n-SiC substrate 11.
【００３６】ｎ−ＳｉＣ基板１１の材料およびＩｎ1-x
Ｇａx Ｎ活性層１３のＧａ組成ｘは、第１の実施例と同
様にして選択する。ｎ−ＳｉＣクラッド層１２およびｐ
−ＳｉＣクラッド層１４は光の閉じ込めのためにそれぞ
れ１μｍ程度の膜厚を有し、Ｉｎ1-x Ｇａx Ｎ活性層１
３は数百Å（例えば５００Å）程度の膜厚を有する。Material of n-SiC Substrate 11 and In 1-x
The Ga composition x of the Ga x N active layer 13 is selected in the same manner as in the first embodiment. n-SiC cladding layer 12 and p
The -SiC cladding layer 14 has a film thickness of about 1 μm for confining light, and the In 1-x Ga x N active layer 1
3 has a film thickness of about several hundred Å (for example, 500 Å).
【００３７】このように、図３の半導体レーザ装置にお
いても、膜厚の薄い活性層を挟む膜厚の厚いクラッド層
１２，１４がｎ−ＳｉＣ基板１１と同じＳｉＣにより形
成されているので、広い温度範囲で格子整合がとれ、転
位の発生が防止される。それにより、ｎ−ＳｉＣ基板１
１上に高品質な結晶層が得られるため、発光効率が高
く、かつ信頼性が高い。As described above, also in the semiconductor laser device of FIG. 3, since the thick clad layers 12 and 14 sandwiching the thin active layer are made of the same SiC as the n-SiC substrate 11, it is wide. Lattice matching is achieved in the temperature range and dislocations are prevented. Thereby, the n-SiC substrate 1
1, a high-quality crystal layer can be obtained, so that the luminous efficiency is high and the reliability is high.
【００３８】図４は本発明の第３の実施例による半導体
レーザ装置の構造を示す断面図である。図４の半導体レ
ーザ装置においては、図３の半導体レーザ装置における
Ｉｎ1- x Ｇａx Ｎ活性層１３の代わりに多層膜活性層
（量子井戸構造層）１８が設けられている。多層膜活性
層１８は、図５に示すように、３つのＩｎ0.1 Ｇａ0.9
Ｎ層１８ａおよび２つのＩｎ0.3 Ｇａ0.7 Ｎ層１８ｂが
交互に積層されてなる。各Ｉｎ0.1 Ｇａ0.9 Ｎ層１８ａ
は１００Åの膜厚を有し、各Ｉｎ0.3 Ｇａ0.7 Ｎ層１８
ｂは８０Åの膜厚を有する。FIG. 4 is a sectional view showing the structure of a semiconductor laser device according to the third embodiment of the present invention. In the semiconductor laser device of FIG. 4, a multilayer active layer (quantum well structure layer) 18 is provided in place of the In 1- x Ga x N active layer 13 of the semiconductor laser device of FIG. As shown in FIG. 5, the multilayer active layer 18 includes three In 0.1 Ga 0.9 layers.
The N layer 18a and the two In 0.3 Ga 0.7 N layers 18b are alternately laminated. Each In 0.1 Ga 0.9 N layer 18a
Has a film thickness of 100 Å, and each In 0.3 Ga 0.7 N layer 18
b has a film thickness of 80Å.
【００３９】Ｉｎ組成（１−ｘ）の小さいＩｎ0.1 Ｇａ
0.9 Ｎ層１８ａはＳｉＣに近い格子定数を有する。ま
た、図２から明らかなように、Ｉｎ組成（１−ｘ）の大
きいＩｎ0.3 Ｇａ0.7 Ｎ層１８ｂはＳｉＣに比べて小さ
いバンドギャップを有する。したがって、Ｉｎ0.1 Ｇａ
0.9 Ｎ層１８ａによりｎ−ＳｉＣクラッド層１２および
ｐ−ＳｉＣクラッド層１４に対して格子整合がとられ
る。また、Ｉｎ0.3 Ｇａ0. 7 Ｎ層１８ｂによりｎ−Ｓｉ
Ｃクラッド層１２およびｐ−ＳｉＣクラッド層１４との
バンドギャップの差を大きくすることができる。それに
より、転位の発生を防止しつつ、Ｉｎ1-x Ｇａx Ｎ活性
層３の膜厚を厚くして光の閉じ込めを良くすることがで
きる。In 0.1 Ga with small In composition (1-x)
The 0.9 N layer 18a has a lattice constant close to that of SiC. Further, as is clear from FIG. 2, the In 0.3 Ga 0.7 N layer 18b having a large In composition (1-x) has a band gap smaller than that of SiC. Therefore, In 0.1 Ga
The 0.9 N layer 18a provides lattice matching with the n-SiC cladding layer 12 and the p-SiC cladding layer 14. Further, n-Si by In 0.3 Ga 0. 7 N layer 18b
The difference in band gap between the C cladding layer 12 and the p-SiC cladding layer 14 can be increased. This makes it possible to increase the film thickness of the In 1-x Ga x N active layer 3 and improve the light confinement while preventing the generation of dislocations.
【００４０】このように、図４の半導体レーザ装置にお
いても、広い温度範囲で転位の発生が防止され、ｎ−Ｓ
ｉＣ基板１１上に高品質な結晶層が得られるので、発光
効率が高く、かつ信頼性が高く、しかも光の閉じ込めが
良好となる。As described above, also in the semiconductor laser device of FIG. 4, the generation of dislocations is prevented in a wide temperature range, and the n-S
Since a high-quality crystal layer can be obtained on the iC substrate 11, the luminous efficiency is high, the reliability is high, and the light confinement is good.
【００４１】上記実施例では、結晶の面方位が傾斜して
いないＳｉＣ基板を用いているが、結晶の面方位が低指
数面から１０°以下に傾けられた基板を用いてもよい。
また、上記実施例のように、ＳｉＣ基板、ｎ−ＳｉＣク
ラッド層およびｐ−ＳｉＣクラッド層を同じ結晶多系の
ＳｉＣにより形成する方が、格子定数が一致するので好
ましいが、ＳｉＣ基板、ｎ−ＳｉＣクラッド層およびｐ
−ＳｉＣクラッド層のいずれかまたは全てを異なる結晶
多系のＳｉＣにより形成してもよい。ただし、ＳｉＣ基
板上のクラッド層はエピタキシャル成長により形成され
るので、ＳｉＣ基板とそれに接するクラッド層を同じ結
晶多系のＳｉＣにより形成する方が製造上容易である。In the above embodiment, the SiC substrate in which the crystal plane orientation is not tilted is used, but a substrate in which the crystal plane orientation is tilted at 10 ° or less from the low index plane may be used.
Further, it is preferable to form the SiC substrate, the n-SiC clad layer and the p-SiC clad layer from the same crystalline poly-system SiC as in the above-mentioned embodiment because the lattice constants are the same, but the SiC substrate, the n- SiC clad layer and p
Any or all of the -SiC cladding layers may be formed of different crystalline poly-SiC. However, since the clad layer on the SiC substrate is formed by epitaxial growth, it is easier in terms of manufacturing to form the SiC substrate and the clad layer in contact with the SiC substrate with the same polycrystal SiC.
【００４２】さらに、上記実施例では、基板の側からｎ
ｎｐ構造としているが、基板および各層を逆の導電型の
層で形成し、基板の側からｐｐｎ構造としてもよい。Further, in the above embodiment, n from the substrate side.
Although the np structure is used, the substrate and each layer may be formed of layers of opposite conductivity type to have a ppn structure from the substrate side.
【００４３】[0043]
【発明の効果】以上のように本発明によれば、ＳｉＣ基
板上にＳｉＣからなる第１のクラッド層、ＩｎＧａＮか
らなる活性層およびＳｉＣからなる第２のクラッド層を
順に形成することにより、広い温度範囲で格子整合がと
れるので、転位の発生が防止され、ＳｉＣ基板上に高品
質な結晶層が得られる。したがって、発光効率が高く、
信頼性の高い半導体発光素子が得られる。As described above, according to the present invention, a first clad layer made of SiC, an active layer made of InGaN, and a second clad layer made of SiC are formed in this order on a SiC substrate, thereby providing a wide area. Since lattice matching can be achieved in the temperature range, generation of dislocations is prevented, and a high quality crystal layer can be obtained on the SiC substrate. Therefore, the luminous efficiency is high,
A highly reliable semiconductor light emitting device can be obtained.
【００４４】特に、活性層をＩｎ組成の小さいＩｎＧａ
Ｎ層とＩｎ組成の大きいＩｎＧａＮ層との多層膜で構成
した場合には、光の閉じ込めを良くしつつ転位の発生を
防止することが可能となる。In particular, the active layer is made of InGa with a small In composition.
In the case of a multilayer film including an N layer and an InGaN layer having a large In composition, it is possible to improve the light confinement and prevent the generation of dislocations.
【図１】本発明の第１の実施例による発光ダイオードの
構造を示す断面図である。FIG. 1 is a sectional view showing a structure of a light emitting diode according to a first embodiment of the present invention.
【図２】Ｉｎ1-x Ｇａx ＮにおけるＧａ組成ｘとバンド
ギャップとの関係を示す図である。FIG. 2 is a diagram showing a relationship between a Ga composition x and a band gap in In 1-x Ga x N.
【図３】本発明の第２の実施例による半導体レーザ装置
の構造を示す断面図である。FIG. 3 is a sectional view showing the structure of a semiconductor laser device according to a second embodiment of the present invention.
【図４】本発明の第３の実施例による半導体レーザ装置
の構造を示す断面図である。FIG. 4 is a sectional view showing the structure of a semiconductor laser device according to a third embodiment of the present invention.
【図５】図４の半導体レーザ装置における多層膜活性層
の構造を示す図である。5 is a diagram showing a structure of a multilayer active layer in the semiconductor laser device of FIG.
【図６】従来のＺｎＳｅ系半導体レーザ装置の構造を示
す断面図である。FIG. 6 is a sectional view showing a structure of a conventional ZnSe based semiconductor laser device.
【図７】従来のＧａＮ系発光ダイオードの構造を示す断
面図である。FIG. 7 is a cross-sectional view showing the structure of a conventional GaN-based light emitting diode.
１，１１ ｎ−ＳｉＣ基板 ２，１２ ｎ−ＳｉＣクラッド層 ３，１３ Ｉｎ1-x Ｇａx Ｎ活性層 ４，１４ ｐ−ＳｉＣクラッド層 １８ 多層膜活性層 なお、各図中同一符号は同一または相当部分を示す。1, 11 n-SiC substrate 2, 12 n-SiC clad layer 3, 13 In 1-x Ga x N active layer 4, 14 p-SiC clad layer 18 Multi-layer active layer A considerable part is shown.
Claims (2)
ラッド層、ＩｎＧａＮからなる活性層およびＳｉＣから
なる第２のクラッド層が順に形成されたことを特徴とす
る半導体発光素子。1. A semiconductor light emitting device comprising a SiC substrate, a first clad layer made of SiC, an active layer made of InGaN, and a second clad layer made of SiC, which are sequentially formed on a SiC substrate.
ＩｎＧａＮ層とＩｎ組成の大きい１以上のＩｎＧａＮ層
とが交互に積層された多層膜からなることを特徴とする
請求項１記載の半導体発光素子。2. The semiconductor according to claim 1, wherein the active layer comprises a multilayer film in which a plurality of InGaN layers having a small In composition and one or more InGaN layers having a large In composition are alternately laminated. Light emitting element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19833694A JP3561536B2 (en) | 1994-08-23 | 1994-08-23 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19833694A JP3561536B2 (en) | 1994-08-23 | 1994-08-23 | Semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0864910A true JPH0864910A (en) | 1996-03-08 |
| JP3561536B2 JP3561536B2 (en) | 2004-09-02 |
Family
ID=16389426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19833694A Expired - Fee Related JP3561536B2 (en) | 1994-08-23 | 1994-08-23 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3561536B2 (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09307190A (en) * | 1996-05-15 | 1997-11-28 | Fuji Photo Film Co Ltd | Aluminum-indium-gallium-nitrogen based semiconductor luminous element and semiconductor luminous device |
| JPH1027940A (en) * | 1996-07-12 | 1998-01-27 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| WO2001084640A1 (en) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Gan-based light-emitting-diode chip and a method for producing a luminescent diode component |
| US6632694B2 (en) * | 2001-10-17 | 2003-10-14 | Astralux, Inc. | Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters |
| EP1447856A2 (en) * | 2003-02-13 | 2004-08-18 | Cree, Inc. | Group III nitride light emitting device with silicon carbide cladding layer |
| US6878563B2 (en) | 2000-04-26 | 2005-04-12 | Osram Gmbh | Radiation-emitting semiconductor element and method for producing the same |
| US6927422B2 (en) | 2002-10-17 | 2005-08-09 | Astralux, Inc. | Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters |
| US7166874B2 (en) | 1995-11-06 | 2007-01-23 | Nichia Corporation | Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor |
| JP2007066986A (en) * | 2005-08-29 | 2007-03-15 | National Univ Corp Shizuoka Univ | Semiconductor light emitting element, package thereof, and manufacturing method thereof |
| US7265392B2 (en) | 2000-05-26 | 2007-09-04 | Osram Gmbh | Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same |
| JP2012038958A (en) * | 2010-08-09 | 2012-02-23 | Toshiba Corp | Semiconductor light-emitting device |
| JP2013179363A (en) * | 2007-02-12 | 2013-09-09 | Regents Of The Univ Of California | Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODE AND LIGHT EMITTING DIODE |
| JP2013219386A (en) * | 2013-06-24 | 2013-10-24 | Toshiba Corp | Semiconductor light-emitting element |
| EP2273574A3 (en) * | 2000-04-26 | 2014-01-01 | OSRAM Opto Semiconductors GmbH | Light-emitting diode chip on a GaN basis and method for producing a light-emitting diode component with a light-emitting diode chip on a GaN basis |
| KR101617312B1 (en) * | 2011-01-26 | 2016-05-02 | 에피스타 코포레이션 | A light-emitting device |
| KR20160096959A (en) * | 2015-02-06 | 2016-08-17 | 한국전자통신연구원 | Silicon nanocrystal light emitting diode and fabricating method of the same |
-
1994
- 1994-08-23 JP JP19833694A patent/JP3561536B2/en not_active Expired - Fee Related
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8304790B2 (en) | 1995-11-06 | 2012-11-06 | Nichia Corporation | Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor |
| US7166869B2 (en) | 1995-11-06 | 2007-01-23 | Nichia Corporation | Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor |
| US7166874B2 (en) | 1995-11-06 | 2007-01-23 | Nichia Corporation | Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor |
| JPH09307190A (en) * | 1996-05-15 | 1997-11-28 | Fuji Photo Film Co Ltd | Aluminum-indium-gallium-nitrogen based semiconductor luminous element and semiconductor luminous device |
| JPH1027940A (en) * | 1996-07-12 | 1998-01-27 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| WO2001084640A1 (en) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Gan-based light-emitting-diode chip and a method for producing a luminescent diode component |
| EP2273574A3 (en) * | 2000-04-26 | 2014-01-01 | OSRAM Opto Semiconductors GmbH | Light-emitting diode chip on a GaN basis and method for producing a light-emitting diode component with a light-emitting diode chip on a GaN basis |
| US6878563B2 (en) | 2000-04-26 | 2005-04-12 | Osram Gmbh | Radiation-emitting semiconductor element and method for producing the same |
| US7319247B2 (en) | 2000-04-26 | 2008-01-15 | Osram Gmbh | Light emitting-diode chip and a method for producing same |
| US7265392B2 (en) | 2000-05-26 | 2007-09-04 | Osram Gmbh | Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same |
| US6632694B2 (en) * | 2001-10-17 | 2003-10-14 | Astralux, Inc. | Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters |
| US6927422B2 (en) | 2002-10-17 | 2005-08-09 | Astralux, Inc. | Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters |
| EP1447856A3 (en) * | 2003-02-13 | 2006-10-25 | Cree, Inc. | Group III nitride light emitting device with silicon carbide cladding layer |
| US6952024B2 (en) * | 2003-02-13 | 2005-10-04 | Cree, Inc. | Group III nitride LED with silicon carbide cladding layer |
| EP1447856A2 (en) * | 2003-02-13 | 2004-08-18 | Cree, Inc. | Group III nitride light emitting device with silicon carbide cladding layer |
| JP2007066986A (en) * | 2005-08-29 | 2007-03-15 | National Univ Corp Shizuoka Univ | Semiconductor light emitting element, package thereof, and manufacturing method thereof |
| JP2013179363A (en) * | 2007-02-12 | 2013-09-09 | Regents Of The Univ Of California | Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODE AND LIGHT EMITTING DIODE |
| US9040327B2 (en) | 2007-02-12 | 2015-05-26 | The Regents Of The University Of California | Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes |
| JP2012038958A (en) * | 2010-08-09 | 2012-02-23 | Toshiba Corp | Semiconductor light-emitting device |
| KR101617312B1 (en) * | 2011-01-26 | 2016-05-02 | 에피스타 코포레이션 | A light-emitting device |
| JP2013219386A (en) * | 2013-06-24 | 2013-10-24 | Toshiba Corp | Semiconductor light-emitting element |
| KR20160096959A (en) * | 2015-02-06 | 2016-08-17 | 한국전자통신연구원 | Silicon nanocrystal light emitting diode and fabricating method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3561536B2 (en) | 2004-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1116282B1 (en) | VERTICAL GEOMETRY InGaN LED | |
| JP5434882B2 (en) | GaN-based III-V compound semiconductor light emitting device | |
| US8106403B2 (en) | III-nitride light emitting device incorporation boron | |
| JP2004521495A (en) | III-nitride LED with undoped cladding layer | |
| JP3561536B2 (en) | Semiconductor light emitting device | |
| JP2005286338A (en) | 4 h-type polytype gallium nitride-based semiconductor element formed on 4 h-type polytype substrate | |
| EP2192623A1 (en) | Vertical Geometry InGaN LED | |
| US20050040414A1 (en) | Light-emitting device and manufacturing method thereof | |
| JP2008288397A (en) | Semiconductor light-emitting apparatus | |
| JP3105981B2 (en) | Semiconductor light emitting device | |
| JPH11274560A (en) | Semiconductor element and manufacture thereof | |
| JP2000150959A (en) | Gallium nitride compound semiconductor light emitting element | |
| US6639258B2 (en) | Group III nitride compound semiconductor device | |
| JP2004014587A (en) | Nitride compound semiconductor epitaxial wafer and light emitting element | |
| JP2976951B2 (en) | Display device with nitride semiconductor light emitting diode | |
| JPH05243613A (en) | Light-emitting device and its manufacture | |
| JP4333092B2 (en) | Manufacturing method of nitride semiconductor | |
| TWI807552B (en) | Nitride semiconductor light emitting element and method of manufacturing same | |
| JPH08116092A (en) | Semiconductor light emitting element and its manufacture | |
| JP2000294884A (en) | Optical semiconductor device | |
| JP3767534B2 (en) | Light emitting device | |
| JP2001085735A (en) | Nitride compound semiconductor light emitting element and its manufacturing method | |
| JP2002305322A (en) | Group iii nitride semiconductor light emitting device and its manufacturing method | |
| JPH1065270A (en) | Semiconductor element employing nitride based semiconductor | |
| JPH08330627A (en) | Semiconductor light-emitting element and its manufacture |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20040511 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040531 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090604 Year of fee payment: 5 |
|
| LAPS | Cancellation because of no payment of annual fees |