JPH08236668A - Heat sink for semiconductor element excellent in heat dissipation effect - Google Patents

Heat sink for semiconductor element excellent in heat dissipation effect

Info

Publication number
JPH08236668A
JPH08236668A JP5822495A JP5822495A JPH08236668A JP H08236668 A JPH08236668 A JP H08236668A JP 5822495 A JP5822495 A JP 5822495A JP 5822495 A JP5822495 A JP 5822495A JP H08236668 A JPH08236668 A JP H08236668A
Authority
JP
Japan
Prior art keywords
heat
heat sink
semiconductor element
view
hollow part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5822495A
Other languages
Japanese (ja)
Other versions
JP2725235B2 (en
Inventor
Junichi Takahashi
純一 高橋
Kenji Futaki
健司 二木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIYOOSAN KK
Original Assignee
RIYOOSAN KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIYOOSAN KK filed Critical RIYOOSAN KK
Priority to JP7058224A priority Critical patent/JP2725235B2/en
Publication of JPH08236668A publication Critical patent/JPH08236668A/en
Application granted granted Critical
Publication of JP2725235B2 publication Critical patent/JP2725235B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE: To prevent the thermal conduction from fluctuating by employing metal plates laminated through a hollow part as a heat sink. CONSTITUTION: The heat sink is made of a clad member comprising two metal plates 1, 2 jointed through thermal adhesion or welding. A substantially S-shaped hollow part 3 is formed on the laminating face of the metal plates 1, 2 and a working liquid 4 is injected thereto. Upon finishing injection of the working liquid 4, the hollow part 3 is degassed and depressurized before a nozzle 3 is enclosed. A semiconductor element 6 is fixed onto the surface of metal plate 2 on the other side projecting from the hollow part 3. Heat generated through operation of the semiconductor element 6 is transmitted from the abutting metal plate 1 to the working liquid 4 in the hollow section 3. Consequently, the working liquid 4 is boiled while depriving heat of evaporation from the semiconductor element 6 and flows to conduct the heat to the surface side of the other over metal plate 2 over the entire length of the hollow part 3. Since the jointing faces of the laminated plates 1, 2 are thermally bonded or welded, heat is conducted uniformly and the heat dissipation characteristics are stabilized.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、減圧状態に作動液を
注入し、その作動液による気化熱の効率的奪取と流動と
により放熱を行い、それによりそこに取り付けられた半
導体素子を冷却するヒートシンクに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention injects a working fluid into a depressurized state and radiates heat by the efficient removal and flow of vaporization heat by the working fluid, thereby cooling a semiconductor element attached thereto. Regarding heat sink.

【0002】[0002]

【従来の技術】トランジスタやサイリスタ等の半導体素
子は、使用中に温度が上昇するとその性能が格段に落
ち、ひどい場合にはシステムが暴走したりする。このた
め、図9や図10に示すようなヒートパイプ10を備えた
ヒートシンクが使用されるようになった。
2. Description of the Related Art A semiconductor device such as a transistor or a thyristor has its performance remarkably deteriorated when the temperature rises during use, and in severe cases, the system may run out of control. For this reason, a heat sink having a heat pipe 10 as shown in FIGS. 9 and 10 has come to be used.

【0003】図9はヒートパイプ10に金属製のブロック
(図示なし)や板11をハンダ付やロウ付にて接合させて
いるもので、半導体素子からの局部的な熱をヒートパイ
プ10によってブロックや板11全体に拡散するものであ
る。図10はヒートパイプ10に金属製のブロック12及び
フィン13をハンダ等により接合させたもので、半導体素
子からの熱をブロック12を介してヒートパイプ10によっ
てフィン13に伝え、該フィン13部から放熱するものであ
る。そして、いずれもヒートパイプ10の中に作動液を注
入後、減圧させてその沸点を下げ、気化熱の効率的奪取
と作動液の流動によって効率的な放熱効果を図ってい
る。
In FIG. 9, a metal block (not shown) and a plate 11 are joined to the heat pipe 10 by soldering or brazing. Local heat from the semiconductor element is blocked by the heat pipe 10. It spreads over the entire board 11. FIG. 10 shows a heat pipe 10 in which a metal block 12 and fins 13 are joined by soldering or the like. The heat from the semiconductor element is transferred to the fins 13 by the heat pipe 10 through the block 12 and the fins 13 It radiates heat. In each case, after the working liquid is injected into the heat pipe 10, the pressure is reduced to lower the boiling point thereof, and the efficient heat dissipation effect is achieved by the efficient removal of the heat of vaporization and the flow of the working liquid.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、以上の
ような従来のヒートシンクは、いずれもヒートパイプと
板またはブロックとがハンダ付やロウ付で接合されてい
るので、接合面にハンダ厚み、ロウ厚みや気泡が存在
し、このため熱の伝導にバラツキが生じてしまって放熱
特性が一定にできないという問題があった。
However, in any of the conventional heat sinks as described above, the heat pipe and the plate or the block are joined by soldering or brazing, so that the soldering thickness and the soldering thickness on the joint surface are large. There is a problem that the heat dissipation characteristics cannot be kept constant due to variations in heat conduction due to the presence of air bubbles.

【0005】この発明は、このような問題に鑑み創案さ
れたもので、熱伝導にバラツキが生じることなく、さら
にそれ以外にも種々の顕著な作用効果が得られる半導体
素子用ヒートシンクを提供しようとするものである。
The present invention was devised in view of the above problems, and it is an object of the present invention to provide a heat sink for a semiconductor device, in which variations in heat conduction do not occur, and various other remarkable effects can be obtained. To do.

【0006】[0006]

【課題を解決するための手段】このため、本発明に係る
半導体素子用ヒートシンクは、合せ面に中空部が形成さ
れる合せ金属板をヒートシンクとして用いたことを特徴
とする。
Therefore, the heat sink for a semiconductor device according to the present invention is characterized by using a laminated metal plate having a hollow portion on the mating surface as a heat sink.

【0007】また、前記構成の範囲において、前記中空
部に突起を設ける態様、金属板表面にフィンを設ける態
様、前記中空部以外の箇所に冷媒流路を形成する態様、
前記中空部内にウィックを挿入する態様、ファンを配置
して強制的に風を吹き付ける態様など種々の態様が採り
うることはいうまでもない。
Further, in the range of the above-mentioned constitution, a mode in which a protrusion is provided in the hollow portion, a mode in which a fin is provided on the surface of the metal plate, and a mode in which a coolant channel is formed in a portion other than the hollow portion
It goes without saying that various modes such as a mode in which a wick is inserted in the hollow portion and a mode in which a fan is arranged to forcibly blow air can be adopted.

【0008】[0008]

【作用】本発明に係るヒートシンクの製造は、例えば少
なくとも一の合せ材の合せ面となる面に溝を形成した
後、他の合せ材と熱接着及び溶着し、溝を膨管させて中
空部を形成させる。その後、中空部に作動液を注入し、
さらに脱気して内部を減圧させ、最後に中空部の開口を
密閉すればよい。ここで作動液の流路となる中空部は溝
を形成するだけでよいので、その形状は自由に行え、取
り付ける半導体に応じて自由な中空部が形成できる等、
設計上の自由度が向上する。
In the manufacture of the heat sink according to the present invention, for example, a groove is formed on the surface to be the mating surface of at least one mating material, and then heat bonding and welding is performed with another mating material, and the groove is expanded to form a hollow portion. To form. After that, inject the hydraulic fluid into the hollow part,
Further, deaeration may be performed to reduce the pressure inside, and finally the opening of the hollow portion may be sealed. Here, since the hollow portion that serves as the flow path of the hydraulic fluid need only be formed with a groove, its shape can be freely formed, and a free hollow portion can be formed according to the semiconductor to be attached.
The degree of freedom in design is improved.

【0009】また、本発明に係るヒートシンクの使用で
は、半導体素子からの熱は中空部の作動液に伝わり、作
動液が沸騰して半導体素子の熱を気化熱として奪うとと
もにその流動によって他方の金属板表面側に中空部の長
さに亘って伝導させるが、その際、合せ材の接合面は熱
接着及び溶着によるので、熱は何の支障もなくそのまま
均一に伝導することになる。
Further, in the use of the heat sink according to the present invention, the heat from the semiconductor element is transferred to the working liquid in the hollow portion, and the working liquid boils to remove the heat of the semiconductor element as heat of vaporization and the flow of the other metal. Conduction is conducted over the length of the hollow portion on the surface side of the plate. At that time, since the joint surface of the mating material is subjected to thermal bonding and welding, heat is conducted uniformly without any trouble.

【0010】さらに、ヒートシンク全体の形状も平板状
でコンパクトであるため、場所のいかんを問わず設置で
き、汎用性が大きい。
Further, since the heat sink as a whole has a flat plate shape and is compact, the heat sink can be installed regardless of the place and is highly versatile.

【0011】[0011]

【実施例】本発明の実施例を図面に基づき説明する。な
お、本発明は以下の実施例に何ら限定されるものではな
い。
Embodiments of the present invention will be described with reference to the drawings. The present invention is not limited to the following examples.

【0012】図1は第1実施例を示す。同図(a)は平面
図、(b)は側面図、(c)は正面図、(d)は中空部周辺の断
面図である。図示のように、本実施例のヒートシンク
は、2枚の合せ金属板1,2が熱接着及び溶着より接合
されるクラッド材であり、その合せ金属板1,2の合わ
せ面に略S字状の中空部3が形成され、そこに作動液4
が注入されている。中空部3内は作動液4が注入された
後、脱気して減圧されており、ノズル5を封鎖して密閉
されている。中空部3が突出する金属板1の他方側の金
属板2の表面には半導体素子6が取り付けられる。
FIG. 1 shows a first embodiment. FIG. 3A is a plan view, FIG. 2B is a side view, FIG. 3C is a front view, and FIG. As shown in the figure, the heat sink of the present embodiment is a clad material in which two laminated metal plates 1 and 2 are joined by thermal bonding and welding, and the mating surfaces of the laminated metal plates 1 and 2 are substantially S-shaped. Hollow part 3 is formed in which the hydraulic fluid 4
Has been injected. The inside of the hollow portion 3 is deaerated and depressurized after the hydraulic fluid 4 is injected, and the nozzle 5 is closed and sealed. The semiconductor element 6 is attached to the surface of the metal plate 2 on the other side of the metal plate 1 from which the hollow portion 3 projects.

【0013】図2は第2実施例を示す。同図(a)は正面
図、(b)は平面図である。本実施例は基本的に第1実施
例と構造が同様であるが、2個のヒートシンクが重構造
で設置される。
FIG. 2 shows a second embodiment. FIG. 1A is a front view and FIG. 1B is a plan view. This embodiment basically has the same structure as the first embodiment, but two heat sinks are installed in a heavy structure.

【0014】第1実施例及び第2実施例のヒートシンク
では、半導体素子6が動作するとその動作に見合うだけ
の発熱が生じることになるが、その熱は当接する金属板
1から中空部3の作動液4に伝わり、作動液4が沸騰し
て半導体素子6の熱を気化熱として奪うとともにその流
動によって他方の金属板2表面側に中空部3の長さに亘
って伝導させる。その際、合せ材1,2の接合面は熱接
着及び溶着によるので、熱は何の支障もなくそのまま均
一に伝導することになり、放熱特性が一定化する。
In the heat sinks of the first and second embodiments, when the semiconductor element 6 operates, heat is generated corresponding to the operation, but the heat is actuated from the metal plate 1 with which it abuts to the hollow portion 3. It is transmitted to the liquid 4 and the working liquid 4 boils to remove the heat of the semiconductor element 6 as vaporization heat, and the flow thereof causes the fluid to be conducted to the surface side of the other metal plate 2 over the length of the hollow portion 3. At this time, since the joint surfaces of the mating materials 1 and 2 are formed by thermal adhesion and welding, heat can be conducted uniformly without any trouble, and the heat dissipation characteristics can be made constant.

【0015】第1実施例及び第2実施例において、図3
に示すように、前記中空部3内に突起30を形成させても
よい。該突起30により、中空部3内の表面積が増加する
ことになって熱伝導効率が向上することになる。
In the first and second embodiments, FIG.
As shown in, the protrusion 30 may be formed in the hollow portion 3. The projection 30 increases the surface area in the hollow portion 3 and improves the heat transfer efficiency.

【0016】また、前記中空部3内には、図4に示すよ
うにウィック31を挿入してもよい。同図(a)はウィック3
1として金網を、(b)は燒結金属を、(c)はワイヤをそれ
ぞれ中空部3内周方向に沿って挿入される例である。こ
のようなウィック31の挿入により、作動液4がウィック
31に付着してその沸騰の効率が上がり、熱伝導効率が上
昇することになる。
A wick 31 may be inserted in the hollow portion 3 as shown in FIG. The same figure (a) is wick 3
1 is a wire mesh, (b) is a sintered metal, and (c) is a wire inserted along the inner circumferential direction of the hollow portion 3. By inserting the wick 31 like this, the hydraulic fluid 4 is wicked.
When it adheres to 31, the boiling efficiency increases and the heat transfer efficiency increases.

【0017】図5は第3実施例を示す。同図(a)は平面
図、(b)は側面図、(c)は正面図、(d)は底面図である。
本実施例のヒートシンクは、2枚の合せ金属板1,2が
熱接着及び溶着より接合されるクラッド材であり、基本
的に第1実施例と同様の構成であるが、合せ金属板1,
2の合わせ面に形成される中空部3が直線状となってい
る点、金属板1表面に冷却効率を大きくしその冷却効果
を高めるためのフィン7がくり抜き加工されている点で
一部異なっている。本実施例でも、第1実施例と同様の
放熱効果が得られるが、フィン7により放熱効果がより
顕著となる。さらに、そのフィン7の放熱効果をより高
めるため、図6に示すように、ファン70を配置して前記
フィン7に強制的に風を吹き付ける構成としてもよい。
FIG. 5 shows a third embodiment. FIG. 1A is a plan view, FIG. 1B is a side view, FIG. 1C is a front view, and FIG.
The heat sink of the present embodiment is a clad material in which two laminated metal plates 1 and 2 are bonded by thermal bonding and welding, and basically has the same configuration as that of the first embodiment, but the laminated metal plates 1 and 2 are
Partly different in that the hollow portion 3 formed on the mating surface of 2 is linear, and that the fins 7 for increasing the cooling efficiency and enhancing the cooling effect are hollowed out on the surface of the metal plate 1. ing. In this embodiment, the same heat radiation effect as in the first embodiment can be obtained, but the fin 7 makes the heat radiation effect more remarkable. Further, in order to further enhance the heat radiation effect of the fins 7, as shown in FIG. 6, a fan 70 may be arranged to forcibly blow air on the fins 7.

【0018】図7は第4実施例を示す。同図(a)は底面
図、(b)は側面図である。本実施例は基本的に第3実施
例と同様の構造であるが、さらにその底部となる金属板
2側に水冷ヒートシンク8を設け、第3実施例の冷却効
果をさらに高めている。
FIG. 7 shows a fourth embodiment. The figure (a) is a bottom view and the figure (b) is a side view. This embodiment basically has the same structure as that of the third embodiment, but a water cooling heat sink 8 is further provided on the bottom side of the metal plate 2 to further enhance the cooling effect of the third embodiment.

【0019】図8は第5実施例を示す。同図(a)は平面
図、(b)は側面図、(c)は正面図である。本実施例も、基
本的に第3実施例と同様の構造であるが、さらに底部と
なる金属板2側に冷却水を循環させる中空部9を設け、
第4実施例と同様に第3実施例の冷却効果をさらに高め
ている。
FIG. 8 shows a fifth embodiment. FIG. 1A is a plan view, FIG. 1B is a side view, and FIG. 1C is a front view. This embodiment also has basically the same structure as that of the third embodiment, except that a hollow portion 9 for circulating cooling water is further provided on the side of the metal plate 2 which is the bottom portion,
Similar to the fourth embodiment, the cooling effect of the third embodiment is further enhanced.

【0020】[0020]

【発明の効果】以上説明したように、本発明に係るヒー
トシンクによれば、合せ板間は熱接着及び溶着によるの
で熱伝導にバラツキが生じるということがなく、放熱特
性が安定化するものとなる。
As described above, according to the heat sink according to the present invention, since heat bonding and welding are performed between the laminated plates, there is no variation in heat conduction, and the heat dissipation characteristics are stabilized. .

【0021】また、中空部の形状も自在に設計できるの
でその用途、目的に沿った最適なものを得ることができ
る。
Further, since the shape of the hollow portion can be freely designed, it is possible to obtain the optimum one according to its use and purpose.

【0022】さらに、ヒートシンク全体の形状もコンパ
クトにすることが可能となるので、どのような場所にも
配置することができ、汎用性が大きい。
Further, since the shape of the heat sink as a whole can be made compact, the heat sink can be arranged at any place and is highly versatile.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1実施例を示し、(a)は平面図、(b)
は側面図、(c)は正面図、(d)は中空部周辺の断面図であ
る。
1 shows a first embodiment of the present invention, (a) is a plan view, (b)
Is a side view, (c) is a front view, and (d) is a sectional view around the hollow portion.

【図2】本発明の第2実施例を示し、(a)は正面図、(b)
は平面図である。
2 shows a second embodiment of the present invention, (a) is a front view, (b)
Is a plan view.

【図3】中空部内に突起が形成される例を示す断面図で
ある。
FIG. 3 is a cross-sectional view showing an example in which a protrusion is formed in a hollow portion.

【図4】中空部内にウィックが挿入される例を示す断面
図である。
FIG. 4 is a cross-sectional view showing an example in which a wick is inserted into a hollow portion.

【図5】本発明の第3実施例を示し、(a)は平面図、(b)
は側面図、(c)は正面図、(d)は底面図である。
FIG. 5 shows a third embodiment of the present invention, (a) is a plan view, (b)
Is a side view, (c) is a front view, and (d) is a bottom view.

【図6】第3実施例にファンを配置した状態を示し、
(a)は平面図、(b)は正面図である。
FIG. 6 shows a state in which a fan is arranged in the third embodiment,
(a) is a plan view and (b) is a front view.

【図7】本発明の第4実施例を示し、(a)は底面図、(b)
は側面図である。
FIG. 7 shows a fourth embodiment of the present invention, (a) is a bottom view and (b) is a bottom view.
Is a side view.

【図8】本発明の第5実施例を示し、(a)は平面図、(b)
は側面図、(c)は正面図である。
FIG. 8 shows a fifth embodiment of the present invention, (a) is a plan view and (b) is a plan view.
Is a side view and (c) is a front view.

【図9】従来のヒートシンクの一例を示し、(a)は平面
図、(b)は側面図である。
FIG. 9 shows an example of a conventional heat sink, (a) is a plan view and (b) is a side view.

【図10】従来のヒートシンクの他の例を示し、(a)は
正面図、(b)は側面図、(c)は平面図である。
FIG. 10 shows another example of a conventional heat sink, (a) is a front view, (b) is a side view, and (c) is a plan view.

【符号の説明】[Explanation of symbols]

1,2 金属板 3 中空部 4 作動液 5 ノズル 6 半導体素子 7 フィン 8 水冷ヒートシンク 1, 2 Metal plate 3 Hollow part 4 Hydraulic fluid 5 Nozzle 6 Semiconductor element 7 Fin 8 Water-cooled heat sink

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 合せ面に中空部が形成される合せ金属板
をヒートシンクとして用いたことを特徴とする放熱効果
の良好な半導体素子用ヒートシンク。
1. A heat sink for a semiconductor device having a good heat dissipation effect, which uses a laminated metal plate having a hollow portion formed on a mating surface as a heat sink.
【請求項2】 請求項1の放熱効果の良好な半導体素子
用ヒートシンクにおいて、前記中空部に突起を設けたこ
とを特徴とする請求項1の放熱効果の良好な半導体素子
用ヒートシンク。
2. The heat sink for a semiconductor device having a good heat dissipation effect according to claim 1, wherein a protrusion is provided in the hollow portion.
【請求項3】 請求項1または請求項2の放熱効果の良
好な半導体素子用ヒートシンクにおいて、金属板表面に
フィンを設けたことを特徴とする請求項1または請求項
2の放熱効果の良好な半導体素子用ヒートシンク。
3. The heat sink for semiconductor device having good heat dissipation effect according to claim 1 or 2, wherein fins are provided on the surface of the metal plate, and good heat dissipation effect according to claim 1 or claim 2. Heat sink for semiconductor devices.
【請求項4】 請求項1ないし請求項3の放熱効果の良
好な半導体素子用ヒートシンクにおいて、前記中空部以
外の箇所に、冷媒流路を形成したことを特徴とする請求
項1ないし請求項3の放熱効果の良好な半導体素子用ヒ
ートシンク。
4. The heat sink for a semiconductor device having good heat dissipation effect according to claim 1, wherein a coolant passage is formed at a location other than the hollow portion. A heat sink for semiconductor devices with good heat dissipation effect.
【請求項5】 請求項1ないし請求項4の放熱効果の良
好な半導体素子用ヒートシンクにおいて、前記中空部内
にウィックを挿入したことを特徴とする請求項1ないし
請求項4の放熱効果の良好な半導体素子用ヒートシン
ク。
5. The heat sink for semiconductor device having good heat dissipation effect according to any one of claims 1 to 4, wherein a wick is inserted into the hollow portion. Heat sink for semiconductor devices.
【請求項6】 請求項3の放熱効果の良好な半導体素子
用ヒートシンクにおいて、ファンを配置して前記フィン
に強制的に風を吹き付けることを特徴とする請求項3の
放熱効果の良好な半導体素子用ヒートシンク。
6. The heat sink for a semiconductor device having a good heat dissipation effect according to claim 3, wherein a fan is arranged to forcibly blow air on the fins. A semiconductor device having a good heat dissipation effect according to claim 3. Heat sink.
JP7058224A 1995-02-23 1995-02-23 Heat sink for semiconductor device with good heat dissipation effect Expired - Fee Related JP2725235B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7058224A JP2725235B2 (en) 1995-02-23 1995-02-23 Heat sink for semiconductor device with good heat dissipation effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7058224A JP2725235B2 (en) 1995-02-23 1995-02-23 Heat sink for semiconductor device with good heat dissipation effect

Publications (2)

Publication Number Publication Date
JPH08236668A true JPH08236668A (en) 1996-09-13
JP2725235B2 JP2725235B2 (en) 1998-03-11

Family

ID=13078120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7058224A Expired - Fee Related JP2725235B2 (en) 1995-02-23 1995-02-23 Heat sink for semiconductor device with good heat dissipation effect

Country Status (1)

Country Link
JP (1) JP2725235B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602841U (en) * 1983-06-20 1985-01-10 日本軽金属株式会社 semiconductor mounting board
JPH03273669A (en) * 1990-03-23 1991-12-04 Toshiba Corp Semiconductor device with cooling mechanism

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602841U (en) * 1983-06-20 1985-01-10 日本軽金属株式会社 semiconductor mounting board
JPH03273669A (en) * 1990-03-23 1991-12-04 Toshiba Corp Semiconductor device with cooling mechanism

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