JPH08227960A - Lead frame for semiconductor device - Google Patents
Lead frame for semiconductor deviceInfo
- Publication number
- JPH08227960A JPH08227960A JP3216795A JP3216795A JPH08227960A JP H08227960 A JPH08227960 A JP H08227960A JP 3216795 A JP3216795 A JP 3216795A JP 3216795 A JP3216795 A JP 3216795A JP H08227960 A JPH08227960 A JP H08227960A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- resin
- lead frame
- slit
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体装置用リードフレ
ームに関し、特に樹脂封止型の半導体装置用リードフレ
ームに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device lead frame, and more particularly to a resin-sealed lead frame for a semiconductor device.
【0002】[0002]
【従来の技術】図5(a),(b)は従来の半導体装置
用リードフレーム(以下、リードフレームと記す)の一
例の樹脂封止後の平面図及び封入金型にてクランプされ
た状態でのE−E′線断面図である。図5(a),
(b)に示すように、封止樹脂10は、ランナ9からゲ
ート部11を通って樹脂モールドパッケージ2へ充填さ
れ半導体素子を封止する。その後、封止樹脂10は硬化
成形した後、封入金型(上型)7,(下型)8から取り
出され、後工程での加工が容易になるように樹脂モール
ドパッケージ2からゲート部11及びランナ9の部分の
封止樹脂10を分離する。2. Description of the Related Art FIGS. 5 (a) and 5 (b) are plan views of an example of a conventional semiconductor device lead frame (hereinafter referred to as a lead frame) after resin encapsulation and a state of being clamped by a sealing die. 6 is a sectional view taken along line EE ′ in FIG. FIG. 5 (a),
As shown in (b), the sealing resin 10 is filled from the runner 9 through the gate portion 11 into the resin mold package 2 to seal the semiconductor element. After that, the encapsulating resin 10 is cured and molded, and then taken out from the encapsulating molds (upper mold) 7 and (lower mold) 8, and is molded from the resin mold package 2 to the gate portion 11 and the gate part 11 so as to be easily processed in a later step. The sealing resin 10 at the runner 9 is separated.
【0003】図6(a),(b)は従来のリードフレー
ムの一例のゲートブレーク後の平面図及びそのF−F′
線断面図である。図6(a),(b)に示すように、従
来のリードフレームでは、ゲート部11及びランナ9の
部分の封止樹脂10を分離した時にゲート部切り欠き穴
3の内面には必ず樹脂バリ12が付着残存していた。こ
の樹脂バリ12は後工程でのアウタリード4の成形工程
あるいは外装めっき工程にて脱落することがあり、この
樹脂バリ12の脱落により後工程で1回/200ショッ
トの頻度で金型破損あるいはアウタリード4の加工時に
0.2%の発生率で打痕を生じアウタリード4を変形さ
せるという問題点を有していた。FIGS. 6 (a) and 6 (b) are plan views of a conventional lead frame after a gate break and its FF '.
It is a line sectional view. As shown in FIGS. 6A and 6B, in the conventional lead frame, when the sealing resin 10 in the gate portion 11 and the runner 9 is separated, a resin burr is always formed on the inner surface of the gate portion cutout hole 3. 12 remained attached. This resin burr 12 may fall off in the molding process of the outer lead 4 or the exterior plating process in a later process. Due to the resin burr 12 dropping in the subsequent process, the mold is damaged or the outer lead 4 is broken once every 200 shots. There was a problem that the outer lead 4 was deformed by producing dents at a rate of occurrence of 0.2% during the machining.
【0004】この従来の技術では、樹脂バリ12を除去
するために金型にて樹脂バリ12近傍のリードフレーム
1を部分的に切断除去することが必要であるため、工数
増加,必要設備の増設等の問題点を抱えていた。また、
後工程にて樹脂バリ12をその近傍のリードフレーム1
の部分ごと切断除去する方法もあるが、その際樹脂封止
した半導体素子及びリードフレーム1に不要な外力が加
わりゲート部11に設けられている吊りピンが80%以
上の発生率で切断し、搬送による精度悪化,発生率0.
3%のコンタクトミス,1回/200ショットの設備破
損等多くの不具合が発生するという問題点があった。In this conventional technique, it is necessary to partially cut and remove the lead frame 1 in the vicinity of the resin burr 12 in order to remove the resin burr 12, so that the man-hours are increased and the necessary equipment is increased. I had problems such as. Also,
In a later step, the resin burr 12 is attached to the lead frame 1 in the vicinity thereof.
There is also a method of cutting and removing the whole part, but at that time, an unnecessary external force is applied to the resin-sealed semiconductor element and the lead frame 1, and the hanging pin provided in the gate part 11 is cut at an occurrence rate of 80% or more, Accuracy deterioration due to transportation, occurrence rate 0.
There were many problems such as 3% of contact mistakes and equipment damage of once / 200 shots.
【0005】上述の樹脂バリ12の付着残存を防止する
ため、特開昭58−207660号公報では、リードフ
レームのフレーム部のモールド型の樹脂注入口に対向す
る部分に孔または切欠きを設けているが、このリードフ
レームでは孔または切欠きの内側面に樹脂が付着し樹脂
バリが付着残存し十分な対策とはなっていない。In order to prevent the above-mentioned resin burrs 12 from remaining adhered, in JP-A-58-207660, a hole or a notch is provided in the portion of the frame portion of the lead frame facing the resin injection port of the mold. However, in this lead frame, resin adheres to the inner surface of the hole or notch and resin burrs adhere and remain, which is not a sufficient countermeasure.
【0006】[0006]
【発明が解決しようとする課題】以上説明したように、
この従来のリードフレームでは、ゲート部切り欠き穴の
内側面に樹脂バリが付着残存し脱落するため、下記に列
挙する問題点があった。As described above,
In this conventional lead frame, the resin burr adheres to and remains on the inner surface of the notch hole in the gate portion and drops off. Therefore, there are problems listed below.
【0007】(1)アウタリード加工金型の破損あるい
はアウタリードの変形等の不具合を誘発する。(1) Outer lead processing Inducing defects such as damage to the die or deformation of the outer leads.
【0008】(2)工数増加,設備の増設が必要とな
る。(2) It is necessary to increase man-hours and add equipment.
【0009】(3)精度悪化,コンタクトミス,設備破
損等の不具合が発生する。(3) Defects such as deterioration of accuracy, contact mistake, equipment damage, etc. occur.
【0010】本発明の目的は、金型や設備の破損,工数
増加や設備の増設,精度悪化やコンタクトミスの発生の
ない半導体装置用リードフレームを提供することにあ
る。It is an object of the present invention to provide a lead frame for a semiconductor device which is free from damage to molds and equipment, increase in man-hours, equipment addition, deterioration in accuracy and contact errors.
【0011】[0011]
【課題を解決するための手段】本願の第1の発明は、溶
解樹脂を流入しモールドして半導体素子を封止する封入
金型に設けられた前記溶解樹脂流入用のゲートと交わる
位置にゲート部切り欠き穴を有する樹脂封止型の半導体
装置用リードフレームにおいて、前記ゲート部切り欠き
穴の外側近傍に周辺に沿ってスリットを設けたことを特
徴とする。According to a first aspect of the present invention, a gate is provided at a position intersecting with the gate for dissolving resin inflow provided in an encapsulating mold for injecting and molding a dissolving resin to seal a semiconductor element. In a resin-sealed semiconductor device lead frame having a partial cutout hole, a slit is provided along the periphery in the vicinity of the outside of the gate cutout hole.
【0012】本願の第2の発明は、溶解樹脂を流入しモ
ールドして半導体素子を封止する封入金型に設けられた
前記溶解樹脂流入用のゲートと交わる位置にゲート部切
り欠き穴を有する樹脂封止型の半導体装置用リードフレ
ームにおいて、前記ゲート部切り欠き穴の外側近傍に周
辺に沿ってハーフエッチを設けたことを特徴とする。According to a second aspect of the present invention, a gate portion cutout hole is provided at a position intersecting with the melted resin inflow gate provided in an encapsulating mold for injecting and molding a melted resin to seal a semiconductor element. A resin-encapsulated lead frame for a semiconductor device is characterized in that a half-etch is provided along the periphery in the vicinity of the outside of the gate portion cutout hole.
【0013】さらに、前記第1の発明または前記第2の
発明において、前記溶解樹脂がゲート部切り欠き穴の外
周とスリットまたはハーフエッチの内周で囲まれる領域
を被覆するように前記スリットまたは前記ハーフエッチ
を形成したことを特徴とする。Further, in the first invention or the second invention, the slit or the slit is formed so that the melted resin covers a region surrounded by the outer circumference of the gate cutout hole and the inner circumference of the slit or half etch. It is characterized by forming a half etch.
【0014】[0014]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will now be described with reference to the drawings.
【0015】図1(a),(b)は本発明の第1の実施
例の樹脂封止後の平面図および封入金型にてクランプさ
れた状態でのA−A′線断面図である。本発明の第1の
実施例は、図1(a),(b)に示すように、溶融樹脂
を流入しモールドして半導体素子を封止する封入金型
7,8に設けられた溶融樹脂流入用のゲート部11と交
る位置に上下ゲート部切り欠き穴3が設けられており、
その外側の近傍に周辺に沿ってスリット5が設けられて
いる。1 (a) and 1 (b) are a plan view after resin sealing of a first embodiment of the present invention and a cross-sectional view taken along the line AA 'in a state of being clamped by a sealing mold. . In the first embodiment of the present invention, as shown in FIGS. 1 (a) and 1 (b), the molten resin provided in the encapsulating molds 7 and 8 for injecting and molding the molten resin to seal the semiconductor element. Upper and lower gate portion cutout holes 3 are provided at positions intersecting the inflow gate portion 11,
Slits 5 are provided along the periphery in the vicinity of the outside.
【0016】リードフレーム1をこのような構成にする
ことにより、封止樹脂10にて樹脂封止後にゲート部1
1およびランナ9の封止樹脂10をゲートブレーク時に
除去するが、その際、上下ゲート部切り欠き穴3周辺の
リードフレーム1の部分がスリット5に沿って切断除去
され、上下ゲート部切り欠き穴3内壁面に付着残存した
封止樹脂10も同時に除去される。With the lead frame 1 having such a structure, the gate portion 1 is sealed with the sealing resin 10 after resin sealing.
1 and the sealing resin 10 of the runner 9 are removed at the time of the gate break. At that time, the portion of the lead frame 1 around the upper and lower gate portion cutout holes 3 is cut and removed along the slits 5, and the upper and lower gate portion cutout holes 3 are removed. 3. The sealing resin 10 attached and remaining on the inner wall surface of 3 is simultaneously removed.
【0017】図2(a),(b)は本発明の第1の実施
例のゲートブレーク後の平面図およびそのB−B′線断
面である。図2(a),(b)に示すように、ゲートブ
レーク後、第1の実施例では、ゲート部切り欠き穴3内
壁に付着残存した封止樹脂10は完全に除去され、特
に、樹脂バリ12を除去する工程が不要であり、また、
ゲート部切り欠き穴3周辺を切断除去する設備も必要が
なくなる。2 (a) and 2 (b) are a plan view and a cross section taken along the line BB 'of FIG. 2 after the gate break of the first embodiment of the present invention. As shown in FIGS. 2A and 2B, after the gate break, in the first embodiment, the sealing resin 10 remaining on the inner wall of the gate cutout hole 3 is completely removed. The step of removing 12 is unnecessary, and
Equipment for cutting and removing the periphery of the gate cutout hole 3 is also unnecessary.
【0018】図3(a),(b)は本発明の第2の実施
例の樹脂封止後の平面図および封入金型にてクランプさ
れた状態でのC−C′線断面図である。本発明の第2の
実施例は、図3(a),(b)に示すように、第1の実
施例のスリット5の代りにゲート部切り欠き3の周辺に
沿ってハーフエッチ6を設けた例でその作用効果は第1
の実施例と同じである。FIGS. 3 (a) and 3 (b) are a plan view after resin sealing and a sectional view taken along the line CC 'in the state of being clamped by an encapsulating mold according to the second embodiment of the present invention. . In the second embodiment of the present invention, as shown in FIGS. 3A and 3B, a half etch 6 is provided along the periphery of the gate notch 3 instead of the slit 5 of the first embodiment. The effect is the first in the example
Is the same as the embodiment described above.
【0019】図4(a),(b)は本発明の第3の実施
例の樹脂封止後の平面図および封入金型にてクランプし
た状態でのD−D′線断面図である。本発明の第3の実
施例は、図4(a),(b)に示すように、第1の実施
例および第2の実施例において、溶融樹脂がゲート部1
1で硬化した封止樹脂10がゲート部切り欠き穴3の外
周とスリット5またはハーフエッチ6の内周で囲まれる
領域を被覆するようにリードフレーム1にスリット5ま
たはハーフエッチ6を形成する。FIGS. 4 (a) and 4 (b) are a plan view of the third embodiment of the present invention after resin encapsulation and a sectional view taken along the line DD 'in a state of being clamped by an enclosing mold. In the third embodiment of the present invention, as shown in FIGS. 4A and 4B, in the first embodiment and the second embodiment, the molten resin is the gate portion 1
The slit 5 or the half etch 6 is formed in the lead frame 1 so that the sealing resin 10 cured in 1 covers the region surrounded by the outer periphery of the gate cutout hole 3 and the inner periphery of the slit 5 or the half etch 6.
【0020】リードフレーム1をこのように構成するこ
とにより、ゲート部11の封止樹脂10がゲート部切り
欠き穴3の外周とスリット5またはハーフエッチ6で囲
まれた領域でリードフレーム1との密着性がより一層向
上し、ゲートブレーク時のゲート部11およびランナー
9の封止樹脂10除去の際に、ゲート部切り欠き穴3近
傍のリードフレーム1のスリット5あるいはハーフエッ
チ6の部分からの切断除去が効果的に行うことができる
ようになり、第1,第2の実施例よりも優れた作用効果
が得られる。By constructing the lead frame 1 in this way, the sealing resin 10 of the gate portion 11 is formed in a region surrounded by the outer periphery of the gate portion cutout hole 3 and the slit 5 or the half etch 6 with the lead frame 1. Adhesion is further improved, and when the sealing resin 10 of the gate portion 11 and the runner 9 is removed at the time of the gate break, from the slit 5 or the half-etch 6 portion of the lead frame 1 in the vicinity of the gate cutout hole 3. The cutting and removal can be effectively performed, and the working effects superior to those of the first and second embodiments can be obtained.
【0021】以上、上下ゲートの場合について説明した
が、本発明は下ゲートの場合においても適用できる。Although the case of the upper and lower gates has been described above, the present invention can be applied to the case of the lower gate.
【0022】[0022]
【発明の効果】以上説明したように本発明は、ゲート部
切り欠き穴の外周に沿ってスリットあるいはハーフエッ
チを設け、更にはゲート部外周とスリットあるいはハー
フエッチの内周の領域のリードフレームと封止樹脂との
密着性を高めることで、樹脂モールドパッケージ成形後
のゲートブレークの際、ゲート部およびランナー部の封
止樹脂の除去と同時にゲート部切り欠き穴近傍のリード
フレームを部分ごと切断除去することが可能となるの
で、樹脂バリがその後のリードフレームに残存すること
なく、後工程での金型の破損が従来の1回/200ショ
ットから0回へ、アウタリード成形時のリード打痕が従
来の0.2%から0%へ発生率を大幅に低減できる効果
がある。As described above, according to the present invention, a slit or a half-etch is provided along the outer periphery of the notch hole of the gate portion, and further, a lead frame in the outer periphery of the gate portion and an inner periphery of the slit or the half-etch is formed. By increasing the adhesion with the encapsulation resin, the lead frame near the gate cutout hole is cut and removed at the same time as the removal of the encapsulation resin on the gate and runners during a gate break after molding the resin mold package. Since the resin burr does not remain on the lead frame after that, the damage of the die in the subsequent process is reduced from the conventional 1/200 shots to 0 times, and the lead dents during outer lead molding are not generated. This has the effect of significantly reducing the occurrence rate from the conventional 0.2% to 0%.
【0023】また、後工程にてゲート部切り欠き穴近傍
のリードフレームを樹脂バリとともに切断金型を用いて
除去する必要が全く無くなり工数,必要設備等も節減で
きる効果がある。Further, there is no need to remove the lead frame in the vicinity of the gate cutout hole together with the resin burr by using a cutting die in the subsequent step, and there is an effect that man-hours and required equipment can be saved.
【0024】更に、切断金型を用いて除去する際に印加
される外力によるゲート部の吊りピンの切断にともなう
後工程での搬送によって生ずる精度悪化が無くなり、従
来0.3%の発生率で発生していたコンタクトミス,1
回/200ショットで発生していた設備破損等の問題も
完全に解消できるという効果がある。Further, the accuracy deterioration caused by the conveyance in the subsequent process accompanying the cutting of the hanging pin of the gate portion due to the external force applied when removing it by using the cutting die is eliminated, and the occurrence rate is 0.3% in the past. Contact mistake that occurred, 1
This has the effect of completely eliminating the problem of equipment damage and the like that occurred in 200 shots / time.
【図1】(a),(b)は本発明の第1の実施例の樹脂
封止後の平面図および封入金型でクランプされた状態で
のA−A′線断面図である。1A and 1B are a plan view after resin sealing according to a first embodiment of the present invention and a cross-sectional view taken along the line AA ′ in a state of being clamped by a sealing mold.
【図2】(a),(b)は本発明の第1の実施例のゲー
トブレーク後の平面図およびそのB−B′線断面図であ
る。2 (a) and 2 (b) are a plan view and a sectional view taken along the line BB 'of FIG. 2 after the gate break of the first embodiment of the present invention.
【図3】(a),(b)は本発明の第2の実施例の樹脂
封止後の平面図および封入金型にてクランプされた状態
でのC−C′線断面図である。3 (a) and 3 (b) are a plan view after resin sealing according to a second embodiment of the present invention and a cross-sectional view taken along the line C-C 'in a state of being clamped by a sealed mold.
【図4】(a),(b)は本発明の第3の実施例の樹脂
封止後の平面図および封入金型にてクランプされた状態
でのD−D′線断面図である。4 (a) and 4 (b) are a plan view after resin sealing of a third embodiment of the present invention and a cross-sectional view taken along the line DD 'in a state of being clamped by a sealed mold.
【図5】(a),(b)は従来のリードフレームの一例
の樹脂封止後の平面図および封入金型にてクランプされ
た状態でのE−E′線断面図である。5 (a) and 5 (b) are a plan view after resin sealing of an example of a conventional lead frame and a cross-sectional view taken along the line EE ′ in a state of being clamped by an encapsulating mold.
【図6】(a),(b)は従来のリードフレームの一例
のゲートブレーク後の平面図およびそのF−F′線断面
図である。6 (a) and 6 (b) are a plan view and a cross-sectional view taken along the line FF ′ of the conventional lead frame after the gate break.
1 リードフレーム 2 樹脂モールドパッケージ 3 ゲート部切り欠き穴 4 アウタリード 5 スリット 6 ハーフエッチ 7 封入金型(上型) 8 封入金型(下型) 9 ランナー 10 封止樹脂 11 ゲート部 12 樹脂バリ 1 Lead Frame 2 Resin Mold Package 3 Gate Notch Hole 4 Outer Lead 5 Slit 6 Half Etch 7 Encapsulating Mold (Upper Mold) 8 Encapsulating Mold (Lower Mold) 9 Runner 10 Sealing Resin 11 Gate Part 12 Resin Burr
Claims (3)
子を封止する封入金型に設けられた前記溶解樹脂流入用
のゲートと交わる位置にゲート部切り欠き穴を有する樹
脂封止型の半導体装置用リードフレームにおいて、前記
ゲート部切り欠き穴の外側近傍に周辺に沿ってスリット
を設けたことを特徴とする半導体装置用リードフレー
ム。1. A resin-sealed semiconductor having a gate cutout hole at a position intersecting with the gate for melted resin inflow provided in an encapsulating mold for injecting and molding a melted resin to seal a semiconductor element. A lead frame for a semiconductor device, wherein a slit is provided along the periphery in the vicinity of the outside of the gate cutout hole in the device lead frame.
子を封止する封入金型に設けられた前記溶解樹脂流入用
のゲートと交わる位置にゲート部切り欠き穴を有する樹
脂封止型の半導体装置用リードフレームにおいて、前記
ゲート部切り欠き穴の外側近傍に周辺に沿ってハーフエ
ッチを設けたことを特徴とする半導体装置用リードフレ
ーム。2. A resin-encapsulated semiconductor having a gate cutout hole at a position intersecting with the gate for inflowing the melted resin, which is provided in an encapsulating mold for injecting and molding the melted resin to seal the semiconductor element. A lead frame for a semiconductor device, wherein in the lead frame for a device, a half etch is provided along the periphery in the vicinity of the outside of the cutout hole of the gate portion.
周とスリットまたはハーフエッチの内周で囲まれる領域
を被覆するように前記スリットまたは前記ハーフエッチ
を形成したことを特徴とする請求項1または2記載の半
導体装置用リードフレーム。3. The slit or the half etch is formed so that the melted resin covers a region surrounded by an outer periphery of the gate cutout hole and an inner periphery of the slit or the half etch. Alternatively, the lead frame for a semiconductor device described in 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3216795A JPH08227960A (en) | 1995-02-21 | 1995-02-21 | Lead frame for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP3216795A JPH08227960A (en) | 1995-02-21 | 1995-02-21 | Lead frame for semiconductor device |
Publications (1)
Publication Number | Publication Date |
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JPH08227960A true JPH08227960A (en) | 1996-09-03 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP3216795A Pending JPH08227960A (en) | 1995-02-21 | 1995-02-21 | Lead frame for semiconductor device |
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JP (1) | JPH08227960A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6242287B1 (en) * | 1997-10-03 | 2001-06-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device manufacturing method, press die and guide rail including forming a crack perpendicular to an extension of the sealing resin |
KR100298687B1 (en) * | 1998-08-31 | 2001-10-27 | 마이클 디. 오브라이언 | Lead Frame Structure of Semiconductor Package |
JP2008060193A (en) * | 2006-08-30 | 2008-03-13 | New Japan Radio Co Ltd | Lead frame and manufacturing method of semiconductor device using the same |
CN103367173A (en) * | 2012-03-27 | 2013-10-23 | 瑞萨电子株式会社 | Method for manufacturing semiconductor device and semiconductor device |
CN104183507A (en) * | 2013-05-27 | 2014-12-03 | 瑞萨电子株式会社 | Method of manufacturing semiconductor device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60138949A (en) * | 1983-12-26 | 1985-07-23 | Toshiba Corp | Lead frame for semiconductor device |
JPH02105448A (en) * | 1988-10-13 | 1990-04-18 | Nec Corp | Lead frame |
JPH0523549B2 (en) * | 1984-12-27 | 1993-04-05 | Canon Kk | |
JPH05315512A (en) * | 1992-05-07 | 1993-11-26 | Nec Corp | Lead frame for semiconductor device |
JPH06310642A (en) * | 1993-04-21 | 1994-11-04 | Fujitsu Miyagi Electron:Kk | Lead frame |
-
1995
- 1995-02-21 JP JP3216795A patent/JPH08227960A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60138949A (en) * | 1983-12-26 | 1985-07-23 | Toshiba Corp | Lead frame for semiconductor device |
JPH0523549B2 (en) * | 1984-12-27 | 1993-04-05 | Canon Kk | |
JPH02105448A (en) * | 1988-10-13 | 1990-04-18 | Nec Corp | Lead frame |
JPH05315512A (en) * | 1992-05-07 | 1993-11-26 | Nec Corp | Lead frame for semiconductor device |
JPH06310642A (en) * | 1993-04-21 | 1994-11-04 | Fujitsu Miyagi Electron:Kk | Lead frame |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6242287B1 (en) * | 1997-10-03 | 2001-06-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device manufacturing method, press die and guide rail including forming a crack perpendicular to an extension of the sealing resin |
KR100298687B1 (en) * | 1998-08-31 | 2001-10-27 | 마이클 디. 오브라이언 | Lead Frame Structure of Semiconductor Package |
JP2008060193A (en) * | 2006-08-30 | 2008-03-13 | New Japan Radio Co Ltd | Lead frame and manufacturing method of semiconductor device using the same |
JP4763554B2 (en) * | 2006-08-30 | 2011-08-31 | 新日本無線株式会社 | Manufacturing method of semiconductor device |
CN103367173A (en) * | 2012-03-27 | 2013-10-23 | 瑞萨电子株式会社 | Method for manufacturing semiconductor device and semiconductor device |
CN104183507A (en) * | 2013-05-27 | 2014-12-03 | 瑞萨电子株式会社 | Method of manufacturing semiconductor device |
JP2014229884A (en) * | 2013-05-27 | 2014-12-08 | ルネサスエレクトロニクス株式会社 | Method for manufacturing semiconductor device |
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