JPH08203849A - Wafer retention member for polishing and method for fitting wafer retention member to surface plate - Google Patents
Wafer retention member for polishing and method for fitting wafer retention member to surface plateInfo
- Publication number
- JPH08203849A JPH08203849A JP1296595A JP1296595A JPH08203849A JP H08203849 A JPH08203849 A JP H08203849A JP 1296595 A JP1296595 A JP 1296595A JP 1296595 A JP1296595 A JP 1296595A JP H08203849 A JPH08203849 A JP H08203849A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- holding member
- wafer
- wafer holding
- surface plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Jigs For Machine Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体ウエハ等の研磨
用ウエハ保持部材を研磨機等の定盤に保持し、研磨加工
するにあたって、その研磨用ウエハ部材の保持に使用さ
れる保持部材、並びに該研磨用ウエハ保持部材を研磨機
の定盤に装着する方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a holding member used for holding a polishing wafer member for holding a polishing wafer holding member such as a semiconductor wafer on a surface plate of a polishing machine or the like for polishing. It also relates to a method of mounting the polishing wafer holding member on a surface plate of a polishing machine.
【０００２】[0002]
【従来の技術】近年、半導体業界においては、ＩＣの集
積度が飛躍的に増大し、４Ｍ、１６Ｍ、さらには６４Ｍ
へと進行中である。2. Description of the Related Art In recent years, in the semiconductor industry, the degree of integration of IC has dramatically increased, and 4M, 16M, and even 64M.
Is in progress.
【０００３】このような状況下では、ＩＣの基盤である
ウエハの表面の品位の向上に対する要求がますます高度
化して来ている。ウエハの化学的性状、電気的性状も当
然のことであるが、ＩＣの集積度を高めるためには、ウ
エハ上に設けられるデバイスを構成する最小線幅がます
ます小さくなり、０．５ミクロンから０．３５ミクロン
へと要求は高度化しつつある。Under such circumstances, the demand for improving the quality of the surface of the wafer, which is the base of the IC, is becoming more and more sophisticated. The chemical and electrical properties of the wafer are natural, but in order to increase the degree of integration of the IC, the minimum line width that constitutes the device provided on the wafer becomes smaller, from 0.5 micron. The demand is increasing to 0.35 micron.
【０００４】このような高精細な処理を可能ならしめる
為に、ウエハ表面の平坦性すなわち厚み精度に対する要
求はますます強くなってきている。すなわち最終の鏡面
仕上げ研磨後のウエハは、全面積にわたる厚み不同（Ｔ
ｏｔａｌ ｔｈｉｃｋｎｅｓｓ ｖａｒｉａｔｉｏｎ）
（ＴＴＶ）が１ミクロン以下、１個のＩＣチップとなる
べき２０ｍｍ平方にわたる厚み不同（Ｌｏｃａｌ ｔｈ
ｉｃｋｎｅｓｓ ｖａｒｉａｔｉｏｎ）（ＬＴＶ）が
０．２ミクロン以下、が要求されるようになって来てい
る。In order to enable such high-definition processing, the demands on the flatness of the wafer surface, that is, the accuracy of thickness, are becoming stronger and stronger. That is, the wafer after the final mirror finish polishing has a thickness non-uniformity (T
(total thickness variation)
(TTV) is less than 1 micron. Thickness of 20 mm square that should be one IC chip (Local th
The requirement for ickness variation (LTV) of 0.2 micron or less has come to be required.
【０００５】この要求精度を達成するために、ウエハの
研磨工程において、ウエハを研磨機の定盤上に、該定盤
面に対して正確に平行に装着する事が必要となる。一般
にウエハを研磨機定盤に装着する方法には、従来より以
下の２通りの方法が使用されている。In order to achieve the required accuracy, it is necessary to mount the wafer on the surface plate of the polishing machine in parallel to the surface of the surface plate in the polishing process of the wafer. Generally, the following two methods have been conventionally used for mounting a wafer on a polishing machine surface plate.
【０００６】１つは定盤を加熱して表面に溶融したワッ
クスを塗布し、これを介してウエハを定盤面に固着させ
る方法である。[0006] One is a method in which a surface plate is heated to apply molten wax to the surface, and the wafer is fixed to the surface of the surface plate through the wax.
【０００７】この方法によれば、ウエハを定盤面に固着
させて研磨作業を行い、研磨作業が終わった後、再び定
盤を加熱してワックスを溶融して、ウエハを定盤面から
取り外し、ウエハを有機溶剤で洗浄して付着したワック
スを除去する方法である。According to this method, the wafer is fixed to the surface plate surface and the polishing work is performed. After the polishing work is finished, the surface plate is heated again to melt the wax, and the wafer is removed from the surface plate surface. Is a method of cleaning wax with an organic solvent to remove the attached wax.
【０００８】この方法は研磨されたウエハの厚み不同は
少ないので満足されるものであるが、工程内に定盤の加
熱冷却が一研磨の前後に各一回行われるので、定盤に熱
歪み発生の機会が多い、ワックスの加熱溶融という熱工
程の存在、ワックスの洗浄除去のために有害な有機溶剤
を使用する、工程の自動化が難しい等の欠点がある。他
の方法は、研磨用ウエハ保持部材を予め定盤に粘着して
おき、この表面に水等の液体を介してウエハを吸着させ
る方法である。This method is satisfactory because the thickness difference of the polished wafer is small, but the heating and cooling of the platen is performed once before and after one polishing in the process, so that the platen is not thermally distorted. There are drawbacks such as frequent occurrences, the presence of a heat process of heating and melting the wax, the use of a harmful organic solvent for washing and removing the wax, and difficulty in automation of the process. Another method is a method in which a polishing wafer holding member is adhered to a surface plate in advance, and the wafer is adsorbed to the surface through a liquid such as water.
【０００９】この方法によれば、研磨作業の工程におい
て定盤へのウエハの装着及び取り外しが容易であり、従
って、能率が良く、自動化にも適しているが、厚み不同
の面で、上記ワックス法に比してやや劣るという問題が
あった。According to this method, it is easy to attach and detach the wafer to and from the surface plate in the polishing process, and therefore, it is efficient and suitable for automation. There was a problem that it was slightly inferior to the law.
【００１０】この問題を改善するために、研磨用ウエハ
保持部材を高精度化することが行われているが、この高
精度化した部材を研磨機の定盤に取り付けるために、従
来では感圧粘着剤を使用するのが普通であり、この工程
が従来全く人手の技巧に頼るものであり、とかく装着し
わ、気泡介在等のトラブルが多く、またウエハ保持部材
の裏面側に設けた粘着剤層が厚いため厚み不同も多く、
しかも研磨作業中にコールドフローと呼ばれる粘着剤層
の塑性変形を起こしてウエハの研磨仕上がり厚み精度を
不安定にするという欠点を有していた。In order to improve this problem, the polishing wafer holding member has been made highly accurate. However, in order to attach this highly accurate member to the surface plate of the polishing machine, pressure sensing has been conventionally used. It is common to use an adhesive, and this process conventionally relies entirely on human skill, and there are many troubles such as wrinkles and air bubbles, and the adhesive layer provided on the back side of the wafer holding member. Is thick, so there are many variations in thickness,
In addition, there is a drawback in that the precision of the thickness of the finished polishing of the wafer becomes unstable by causing plastic deformation of the adhesive layer called cold flow during the polishing operation.
【００１１】[0011]
【発明が解決しようとする課題】本発明は、上記の問題
点を解決するものであり、その目的とするところは、研
磨用ウエハ保持部材を気泡介在等の問題なく高精度に、
しかも容易に研磨機定盤上に接着させることができ、し
かも研磨作業中における厚み変化を最小ならしめた研磨
用ウエハ保持部材とそのウエハ保持部材の定盤への装着
方法を提供する事にある。SUMMARY OF THE INVENTION The present invention is intended to solve the above problems, and an object of the present invention is to provide a polishing wafer holding member with high accuracy without problems such as bubble inclusion.
Moreover, it is an object of the present invention to provide a polishing wafer holding member that can be easily adhered to a polishing machine surface plate and that minimizes a thickness change during polishing work, and a method of mounting the wafer holding member on the surface plate. .
【００１２】[0012]
【課題を解決するための手段】本発明の研磨用ウエハ保
持部材は、透明なシート状基材と、該基材の表面に形成
されており、研磨用ウエハを装着し得る表面層と、該基
材の裏面側に形成された電子線硬化型粘着剤層と、を有
し、そのことにより上記目的が達成される。上記粘着剤
層の裏面に、空気抜き用の微細な凹凸が形成されている
のが好ましい。さらに、該粘着剤層の裏面側に剥離可能
に貼り付けられた離型シートを有するのが好ましい。上
記表面層が発泡層を有するのが好ましい。The polishing wafer holding member of the present invention comprises a transparent sheet-like base material, a surface layer formed on the surface of the base material, on which a polishing wafer can be mounted, and And an electron beam-curable pressure-sensitive adhesive layer formed on the back surface side of the base material, whereby the above object is achieved. It is preferable that the back surface of the pressure-sensitive adhesive layer is provided with fine irregularities for removing air. Furthermore, it is preferable to have a release sheet releasably attached to the back surface side of the pressure-sensitive adhesive layer. It is preferable that the surface layer has a foam layer.
【００１３】本発明の研磨用ウエハ保持部材の定盤への
装着方法は、上記研磨ウエハ保持部材の電子線硬化型粘
着剤層を研磨機定盤上に装置する行程、および該研磨用
ウエハ保持部材の表面層側から電子線を照射して該粘着
剤層を硬化させて該研磨用ウエハ保持部材を定盤へ接着
させる行程、を包含し、そのことにより上記目的が達成
される。上記研磨用ウエハ保持部材の上に透明な平板が
載置される行程を、さらに包含するのが好ましい。The method of mounting the polishing wafer holding member on the surface plate of the present invention comprises the steps of installing the electron beam curing type adhesive layer of the polishing wafer holding member on the surface plate of the polishing machine, and holding the polishing wafer. The step of irradiating an electron beam from the surface layer side of the member to cure the pressure-sensitive adhesive layer to adhere the polishing wafer holding member to the surface plate is achieved, whereby the above object is achieved. It is preferable to further include the step of placing a transparent flat plate on the polishing wafer holding member.
【００１４】以下本発明を詳細に説明する。The present invention will be described in detail below.
【００１５】本発明に使用される透明なシート状基材と
しては、ポリエチレンテレフタレート、ポリエーテルイ
ミド、ポリウレタン等、種々の合成樹脂シートを使用す
ることができ、例えば、ポリエステルフィルム（商品
名、ルミラー、東レ社製）等が挙げられる。As the transparent sheet-like base material used in the present invention, various synthetic resin sheets such as polyethylene terephthalate, polyether imide and polyurethane can be used. For example, polyester film (trade name, lumirror, Toray Co., Ltd.) and the like.
【００１６】上記シート状基材の表面に積層される表面
層は、透光性を有する発泡層から形成されるのがよく、
例えば、ウレタン重合体と、塩化ビニル重合体、塩化ビ
ニル−酢酸ビニル共重合体、塩化ビニル−酢酸ビニル−
ビニルアルコール三元共重合体等のビニル重合体と、ジ
メチルホルムアミドとを有する発泡層組成物を、上記基
材上に設けて湿式凝固法により発泡層を形成することが
できる。この発泡層の表面部、特にその表面に形成され
たスキン層はバフされて、ウエハが容易に吸着され得る
ようにするのがよい。The surface layer laminated on the surface of the sheet-like substrate is preferably formed of a light-transmitting foam layer,
For example, urethane polymer, vinyl chloride polymer, vinyl chloride-vinyl acetate copolymer, vinyl chloride-vinyl acetate-
A foam layer composition containing a vinyl polymer such as a vinyl alcohol terpolymer and dimethylformamide can be provided on the above substrate to form the foam layer by a wet coagulation method. The surface portion of the foam layer, especially the skin layer formed on the surface thereof, is preferably buffed so that the wafer can be easily adsorbed.
【００１７】具体的には、ポリウレタン或はビニル等よ
り選ばれる重合体を湿式凝固法により作られた発泡層を
有するシートを基材上に積層するのが好ましい。Specifically, it is preferable to laminate a sheet having a foam layer produced by a wet coagulation method with a polymer selected from polyurethane, vinyl, etc., on a substrate.
【００１８】上記表面層を構成する重合体はカーボンブ
ラック等の充填材を配合せず、透光性を有する素材か
ら、通常選択される。The polymer constituting the surface layer is usually selected from a light-transmissive material without adding a filler such as carbon black.
【００１９】上記粘着剤層は、上記基材の裏面（研磨機
上定盤側）に設けられており、その形態としては、ウエ
ハ保持部材を定盤面上へ載置する際に空気抜きが容易に
行える形態であれば特に限定されない。例えば、一方向
に配列した平行条、或はさらにそれ以上をもって形成さ
れて成る微細な凹凸で形成することができ、また表面側
がそれらの突条、凹凸を有する層で形成することもでき
る。The pressure-sensitive adhesive layer is provided on the back surface of the base material (on the surface plate side of the polishing machine), and its form is such that air can be easily released when the wafer holding member is placed on the surface plate surface. There is no particular limitation as long as it can be performed. For example, it may be formed with parallel stripes arranged in one direction, or with fine irregularities formed by more than that, or may be formed with a layer having those projections and irregularities on the surface side.
【００２０】粘着剤層を形成する粘着剤は、電子線（特
に、光）硬化型樹脂から選ばれ、通常は、反応性オリゴ
マー、光重合性モノマー、光重合開始剤及び添加剤等か
らなる。The pressure-sensitive adhesive forming the pressure-sensitive adhesive layer is selected from electron beam (particularly photo) curable resins, and usually comprises a reactive oligomer, a photopolymerizable monomer, a photopolymerization initiator and an additive.
【００２１】上記反応性オリゴマーの例としては、主に
分子鎖中に二重結合を一個ないし数個含むオリゴマー
で、ポリエステル化合物、ポリウレタン化合物、ポリエ
ーテル化合物、エポキシ化合物、ポリブタジエン化合物
などが使用できる。Examples of the above-mentioned reactive oligomer are oligomers mainly containing one to several double bonds in the molecular chain, and polyester compounds, polyurethane compounds, polyether compounds, epoxy compounds, polybutadiene compounds and the like can be used.
【００２２】上記光重合性モノマーとしては、単官能あ
るいは多官能性モノマーが用いられる。たとえば、エチ
レングリコールジアクリレート，ジエチレングリコール
ジアクリレート，トリエチレングルコールジアクリレー
ト，プロピレングリコールジアクリレート，トリメチロ
ールプロパントリアクリレート，ペンタエリスリトール
テトラアクリレートおよび上記ジないしポリアクリレー
トに相当するそれぞれのメタクリレート類，メチルアク
リレート，エチルアクリレート，ブチルアクリレート，
２−エチルヘキシルアクリレート，メチルメタクリレー
ト，エチルメタクリレート，ブチルメタクリレート，シ
クロヘキシルアクリレート，シクロヘキシルメタクリレ
ート，グリシジルアクリレート，グリシジルメタクリレ
ート，２−ヒドロキシエチルアクリレート，２−ヒドロ
キシプロピルアクリレート，２−ヒドロキシエチルメタ
クリレート，２−ヒドロキシプロピルメタクリレート，
スチレン，ビニルトルエン，アクリルアミド，メチルビ
ニルエーテルなどを用いることが出来る。A monofunctional or polyfunctional monomer is used as the photopolymerizable monomer. For example, ethylene glycol diacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, propylene glycol diacrylate, trimethylolpropane triacrylate, pentaerythritol tetraacrylate and the respective methacrylates corresponding to the above di- or polyacrylates, methyl acrylate, Ethyl acrylate, butyl acrylate,
2-ethylhexyl acrylate, methyl methacrylate, ethyl methacrylate, butyl methacrylate, cyclohexyl acrylate, cyclohexyl methacrylate, glycidyl acrylate, glycidyl methacrylate, 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate,
Styrene, vinyltoluene, acrylamide, methyl vinyl ether, etc. can be used.
【００２３】上記光重合開始剤としては、たとえば、ベ
ンゾイン，ベンゾインメチルエーテル，ジアセチル，ベ
ンゾフェノン，ベンズアルデヒド，アセトフェノン，ベ
ンジルなどのカルボニル化合物のほか、ジフェニルジス
ルフィド，ジベンゾチアゾリルジスルフィドなどのいお
う化合物、ペンタクロロブタジエン，オクタクロロブテ
ン，ヘキサクロロベンゼンといったハロゲン化合物およ
びアゾビスイソブチロニトリルなどが光照射を受けてラ
ジカルを発生する開始剤として用いることができる。Examples of the photopolymerization initiator include carbonyl compounds such as benzoin, benzoin methyl ether, diacetyl, benzophenone, benzaldehyde, acetophenone and benzyl, sulfur compounds such as diphenyl disulfide and dibenzothiazolyl disulfide, and pentachloro. Halogen compounds such as butadiene, octachlorobutene, and hexachlorobenzene, and azobisisobutyronitrile can be used as an initiator that generates a radical upon irradiation with light.
【００２４】上記添加剤としては安定剤としてハイドロ
キノン，ベンゾキノン等や、接着性の改善のためにブチ
ルカテコール等を用いることができる。As the additive, hydroquinone, benzoquinone or the like as a stabilizer, or butyl catechol or the like for improving the adhesiveness can be used.
【００２５】上記粘着剤層の裏面側には、通常、離型シ
ート（もしくは離型フィルム）が添着されており、本発
明の研磨用ウエハ保持部材が使用される時まで、該粘着
剤層が該離型シートにより保護される。粘着剤層の裏面
側に形成される凹凸は、この離型シートに設けた凹凸の
転写によって形成してもよい。A release sheet (or release film) is usually attached to the back side of the pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer remains until the polishing wafer holding member of the present invention is used. It is protected by the release sheet. The unevenness formed on the back surface side of the pressure-sensitive adhesive layer may be formed by transferring the unevenness provided on the release sheet.
【００２６】このようにして積層された研磨用ウエハ保
持部材のセットは、遮光性シートで包装されるのが好ま
しい。本発明の研磨用ウエハ保持部材の基本的構成は、
例えば、特開平５−４７３９２号公報に開示されてい
る。The set of polishing wafer holding members thus laminated is preferably wrapped with a light-shielding sheet. The basic structure of the polishing wafer holding member of the present invention is
For example, it is disclosed in JP-A-5-47392.
【００２７】次に、本発明の研磨用ウエハ保持部材の製
造方法の一例を図面に基づいて説明する。Next, an example of a method of manufacturing the polishing wafer holding member of the present invention will be described with reference to the drawings.
【００２８】図１に示すように、シート状基材１の上面
に、ポリウレタン或はビニル等より選ばれる重合体を含
有する発泡層組成物を塗布し湿式凝固法により、表面層
として発泡層２を形成する。その後、この発泡層２の表
面部をバフする。発泡層２をバフする箇所は適宜選択す
ることができ、図１のＡ線で示すように、研磨クロスで
は公知の如く、発泡層２の表面に形成されたスキン層３
をバフすることにより図２に示す倒立タイプのウエハ保
持部材が得られ、Ｃ線でバフすることにより図３に示す
正立タイプのウエハ保持部材が得られる。As shown in FIG. 1, a foam layer composition containing a polymer selected from polyurethane or vinyl is applied to the upper surface of a sheet-like base material 1 and a foam layer 2 is formed as a surface layer by a wet coagulation method. To form. Then, the surface of the foam layer 2 is buffed. The location where the foam layer 2 is buffed can be selected as appropriate, and as shown by the line A in FIG. 1, the skin layer 3 formed on the surface of the foam layer 2 is well known in the polishing cloth.
2 is obtained by buffing, and the upright type wafer holding member shown in FIG. 3 is obtained by buffing with the C line.
【００２９】次に、図３に示すように、該基材１の裏面
側（研磨機上定盤側）に粘着剤層４を設け、さらにその
粘着剤層４の裏面側に離型シート５を貼り付けて、研磨
用ウエハ保持部材１０が構成される。該粘着剤層４には
多数の平行な突条４ａが形成される。Next, as shown in FIG. 3, a pressure-sensitive adhesive layer 4 is provided on the back surface side of the base material 1 (on the surface plate of the polishing machine), and a release sheet 5 is provided on the back surface side of the pressure-sensitive adhesive layer 4. Are attached to form the polishing wafer holding member 10. A large number of parallel ridges 4a are formed on the adhesive layer 4.
【００３０】このようにして構成された本発明の研磨用
ウエハ保持部材１０を研磨機の定盤上へ装着するに当た
っては、まず研磨機定盤を取り外して清浄になし、その
定盤面の装着面を上にして水平に設置する。次いで、上
記研磨用ウエハ保持部材を包装より取り出して、粘着面
の離型シートを除去して図４に示すように、粘着剤層４
の面を定盤面に合わせて静置する。この際、研磨用ウエ
ハ保持部材１０は軽く湾曲させてその中央部から先に定
盤面に接触するように静置することが望ましい。またこ
の際、定盤６は粘着剤層４が軟化する適宜温度に加温さ
れていることが好ましい。In mounting the polishing wafer holding member 10 of the present invention thus constructed on the surface plate of the polishing machine, first, the polishing machine surface plate is detached and cleaned, and the surface of the surface plate is mounted. Install horizontally with the top facing up. Next, the polishing wafer holding member is taken out of the package, the release sheet on the adhesive surface is removed, and as shown in FIG.
Align the surface of with the surface of the surface plate and leave it still. At this time, it is desirable that the polishing wafer holding member 10 be lightly curved and left still so that the central portion thereof comes into contact with the surface plate first. At this time, it is preferable that the surface plate 6 is heated to an appropriate temperature at which the pressure-sensitive adhesive layer 4 is softened.
【００３１】この場合の定盤６の温度は、ワックス方式
のようなワックス溶融温度以上の高温で有る必要がな
く、粘着剤層４が軟化するに足る温度である４０℃以下
でよい。しかも定盤６を加温するのは、研磨用ウエハ保
持部材１０が劣化してこれを張り替える時まで必要がな
いので、定盤６に対する熱履歴も非常に頻度が減少する
ため、定盤６の平面精度維持の上から、非常に有益であ
る。In this case, the temperature of the surface plate 6 does not need to be higher than the wax melting temperature as in the wax system, and may be 40 ° C. or lower, which is a temperature at which the pressure-sensitive adhesive layer 4 is softened. Moreover, since it is not necessary to heat the surface plate 6 until the polishing wafer holding member 10 is deteriorated and is replaced, the heat history of the surface plate 6 is extremely reduced. It is very useful for maintaining the plane accuracy of.
【００３２】次いで、静置した研磨用ウエハ保持部材１
０の上面から全面を均一に加圧する。その方法としては
適宜な方法でよいが、押圧力は１ｋｇ／ｃｍ2を超えな
い範囲が良く、加圧方法としては充分な厚みの弾性材を
介して平板でプレスする等、或は、最も望ましくは、静
置した研磨用ウエハ保持部材１０の上からプラスチック
シートで覆い、その下の空気を吸引して負圧とする事に
より加圧する、等の方法で良い。Next, the polishing wafer holding member 1 which is left stationary
The entire surface is pressed uniformly from the upper surface of 0. Any suitable method may be used, but the pressing force is preferably within a range not exceeding 1 kg / cm 2 , and the pressing method is, for example, pressing with a flat plate through an elastic material having a sufficient thickness, or most preferably. For example, the method may be such that the polishing wafer holding member 10 that has been left stationary is covered with a plastic sheet from above, and the air below it is sucked to obtain a negative pressure, thereby applying pressure.
【００３３】こうすることにより、研磨用ウエハ保持部
材１０の基材裏面の光硬化型粘着剤層４に設けた凹凸に
より定盤６との界面に空気が介在すること無く、また粘
着剤層４の突条４ａは適宜温度に加温された定盤面に接
触して軟化して定盤面に馴染んで密着する。By doing so, air is not present at the interface with the surface plate 6 due to the unevenness provided on the photocurable pressure-sensitive adhesive layer 4 on the back surface of the substrate of the polishing wafer holding member 10, and the pressure-sensitive adhesive layer 4 is provided. The ridges 4a come into contact with the surface plate surface heated to an appropriate temperature to be softened to fit and adhere to the surface plate surface.
【００３４】次に、加圧のための手段を取り除いた後直
ちに、研磨用ウエハ保持部材１０の上面に、充分に平面
精度を有する透光性平板、特に紫外線領域の透過性の優
れた合成石英製オプチカル硝子フラット７等を載置して
さらに粘着剤層４の突条４ａの定盤面への馴染みを進行
させる。この場合、要すれば、オプチカルフラット７の
上からさらに加圧手段を加えても良い。この様にして研
磨用ウエハ保持部材１０の定盤６への圧着を、２段階に
行っても良く、或は上記の後段のみをもって圧着しても
良い。こうする事により粘着剤層４に設けた凹凸の凹部
がその面積を３０％以上減少する程度まで加圧を行うの
が良い。これにより粘着剤層４に存在した突条４ａによ
り構成される面の平面性の不同を矯正し、研磨用ウエハ
保持部材１０を定盤面に高精度に平行に設置する事がで
きる。Immediately after removing the means for applying pressure, a transparent flat plate having sufficient planar accuracy, especially synthetic quartz having excellent transparency in the ultraviolet region, is formed on the upper surface of the polishing wafer holding member 10. The optical glass flat 7 or the like made of the adhesive is placed, and further the familiarity of the ridges 4a of the adhesive layer 4 with the surface plate surface is advanced. In this case, if necessary, a pressing means may be further added from above the optical flat 7. In this manner, the polishing wafer holding member 10 may be pressure-bonded to the surface plate 6 in two stages, or may be pressure-bonded only in the latter stage. By doing so, it is preferable to apply pressure to the extent that the concave and convex concave portions provided in the pressure-sensitive adhesive layer 4 reduce the area thereof by 30% or more. As a result, it is possible to correct the unevenness of the flatness of the surface formed by the ridges 4a existing in the adhesive layer 4, and to install the polishing wafer holding member 10 in parallel with the surface plate with high accuracy.
【００３５】さらに、オプチカル硝子フラット７上の加
圧手段を除去したのち、該硝子フラット７の上から、電
子線照射手段８より電子線を照射し、粘着剤層４を光硬
化させる。Further, after removing the pressing means on the optical glass flat 7, an electron beam is irradiated from above the glass flat 7 by the electron beam irradiation means 8 to photo-cure the pressure-sensitive adhesive layer 4.
【００３６】電子線照射手段としては、高圧水銀灯、低
圧水銀灯、ケミカルランプ等の紫外線照射手段を用いる
ことができる。ランプ出力としては、硬化すべき粘着剤
層平方ｃｍあたり１０〜２００マイクロワットが必要で
ある。この様にして粘着剤層４を光硬化させることによ
り、その接着力が増すので、粘着剤層４の厚みは２０ミ
クロン以下でよい。また光硬化により該粘着剤層４はそ
の塑性変形性が減少する。As the electron beam irradiation means, an ultraviolet irradiation means such as a high pressure mercury lamp, a low pressure mercury lamp or a chemical lamp can be used. The lamp power required is 10 to 200 microwatts per square cm of the adhesive layer to be cured. By photo-curing the pressure-sensitive adhesive layer 4 in this manner, its adhesive strength is increased, so that the thickness of the pressure-sensitive adhesive layer 4 may be 20 μm or less. Further, the photo-curing reduces the plastic deformability of the pressure-sensitive adhesive layer 4.
【００３７】この様に、従来、研磨用ウエハ保持部材を
感圧接着剤で定盤に貼り付けていたのに比較して、研磨
作業中に厚みの厚い接着剤が塑性変形する事による研磨
ウエハの厚み精度への悪影響を低減する事ができる。As described above, compared with the case where the polishing wafer holding member is conventionally attached to the surface plate with the pressure-sensitive adhesive, the polishing wafer due to the plastic deformation of the thick adhesive during the polishing operation. It is possible to reduce the adverse effect on the thickness accuracy of.
【００３８】こうして、研磨用ウエハ保持部材を定盤面
上に高精度に平行に貼り付けた後、要すれば、ウエハを
位置決め或は位置に保持するためのリセス孔を設けたテ
ンプレートを研磨用ウエハ保持部材の発泡層２の上面
に、通常の方法で装着して、研磨作業に供する事が出来
る。In this way, after the polishing wafer holding member is adhered to the surface of the surface plate in parallel with high precision, if necessary, the template provided with the recess hole for positioning or holding the wafer in position is used as the polishing wafer. It can be attached to the upper surface of the foam layer 2 of the holding member by a usual method and used for polishing work.
【００３９】[0039]
【作用】本発明の研磨用ウエハ保持部材は、透明なシー
ト状基材と、該基材の表面に形成されており、研磨用ウ
エハを装着し得る表面層と、該基材の裏面側に形成され
た電子線硬化型粘着剤層と、を有することにより、該保
持部材の粘着剤層を定盤面上に貼り付けた後、表面層側
からその粘着剤層に電子線を照射して該保持部材を定盤
面に接着させることができる。The polishing wafer holding member of the present invention comprises a transparent sheet-like base material, a surface layer formed on the surface of the base material, a surface layer on which a polishing wafer can be mounted, and a back surface side of the base material. By having the formed electron beam-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer of the holding member is attached to the surface plate surface, and then the pressure-sensitive adhesive layer is irradiated with an electron beam from the surface layer side. The holding member can be adhered to the surface plate surface.
【００４０】従って、粘着剤層の厚みを比較的薄くした
としても、ウエハ保持部材を強固に定盤に接着させるこ
とができるので、ウエハ保持部材の厚み精度を向上させ
ることができ、また研磨作業中に硬化した粘着剤層が塑
性変形する事もない。Therefore, even if the thickness of the pressure-sensitive adhesive layer is made relatively thin, the wafer holding member can be firmly adhered to the surface plate, so that the accuracy of the thickness of the wafer holding member can be improved and polishing work can be performed. The cured adhesive layer is not plastically deformed.
【００４１】[0041]
【実施例】以下、本発明を実施例に基づいて具体的に説
明する。EXAMPLES The present invention will be specifically described below based on examples.
【００４２】（実施例１） １−１）バッキングフィルムの作製 図１に示すように、１８８ミクロンのポリエステルフィ
ルム１（ルミラー、東レ社製）上に、表１に示す配合物
Ｉを７００ミクロンの厚みにコーティングし、湿式凝固
させ発泡層２を形成し、洗浄、乾燥工程をへて、図１に
示すバッキングフィルム１１を作製した。このバッキン
グフィルム１１の表層１００ミクロンを研削（図１のＣ
線で研削）し、図３に示すバッキングフィルム１２を得
た。(Example 1) 1-1) Preparation of backing film As shown in FIG. 1, on a 188-micron polyester film 1 (Lumirror, manufactured by Toray Industries, Inc.), the compound I shown in Table 1 was added to a 700-micron composition. The backing film 11 shown in FIG. 1 was produced by coating the film to a thickness and wet-coagulating it to form a foam layer 2, followed by washing and drying steps. 100 μm surface layer of this backing film 11 is ground (C in FIG. 1).
Line) to obtain the backing film 12 shown in FIG.
【００４３】１−２）離型フィルム付き粘着フィルムの
作製 ５０ミクロンのポリエステルフィルム（ルミラー、東レ
社製）上に、表２に示す配合物ＩＩを２０ミクロンの厚
みにコーティングし、予め用意した１０ミクロンのスリ
ットの入ったマスクを介して紫外線を照射し、配合物Ｉ
Ｉを光硬化させた。その後、純水とアルコールの混合物
を用いて配合物ＩＩの未硬化部分を除去し、平行条に１
０ミクロンの凹凸のある離型フィルムを作製した。この
離型フィルムに、表３に示す光硬化型粘着剤配合物ＩＩ
Ｉを２０ミクロンの厚みにコーティングし、離型フィル
ム付き粘着フィルムを得た。1-2) Preparation of Adhesive Film with Release Film A 50 μm polyester film (Lumirror, manufactured by Toray) was coated with the formulation II shown in Table 2 to a thickness of 20 μm and prepared in advance 10. Irradiate with UV light through a mask with micron slits to form compound I
I was photocured. Then, the uncured portion of the compound II was removed using a mixture of pure water and alcohol, and the parallel strip was
A release film having 0 micron unevenness was prepared. To this release film, the photocurable pressure sensitive adhesive composition II shown in Table 3 was added.
I was coated to a thickness of 20 μm to obtain a pressure-sensitive adhesive film with a release film.
【００４４】１−３）研磨用ウエハ保持部材の作製 図３に示すように、前記バッキングフィルム１２のポリ
エステルフィルム１側に、前記の粘着フィルムを貼り合
わせ、光硬化性粘着フィルム付きのバッキングフィルム
（研磨用ウエハ保持部材）１０を得た。1-3) Preparation of Wafer Holding Member for Polishing As shown in FIG. 3, the above-mentioned adhesive film is attached to the polyester film 1 side of the backing film 12, and a backing film with a photocurable adhesive film ( A polishing wafer holding member) 10 was obtained.
【００４５】１−４）紫外線照射による粘着剤層の硬化 前記研磨用ウエハ保持部材１０の離型フィルム５を剥が
し、粘着剤面を研磨機のセラミック製の上定盤（４８５
ｍｍ径）６に軽く貼り合わせた。その後、重量５ｋｇの
石英製オプチカルフラット７を均一にのせ、３０分放置
し、粘着剤層４を上定盤６に馴染ませた。この石英製オ
プチカルフラット７を介して、高圧水銀灯（１ｋｗ）を
用いて紫外線を２０分、３０ｃｍの距離から照射し、粘
着剤層４を硬化させた（図４）。1-4) Curing of the pressure-sensitive adhesive layer by UV irradiation The release film 5 of the polishing wafer holding member 10 is peeled off, and the pressure-sensitive adhesive surface is made of a ceramic upper plate (485) of a polishing machine.
(mm diameter) 6 was lightly stuck. Thereafter, a quartz optical flat 7 having a weight of 5 kg was evenly placed and left for 30 minutes to make the adhesive layer 4 fit into the upper platen 6. Ultraviolet rays were irradiated from this quartz optical flat 7 using a high-pressure mercury lamp (1 kw) for 20 minutes from a distance of 30 cm to cure the pressure-sensitive adhesive layer 4 (FIG. 4).
【００４６】１−５）テンプレートの接着 セラミック製定盤６に貼り合わせた研磨用ウエハ保持部
材１０の表面側に、ガラスエポキシシートから作製した
テンプレート（外径４８５ｍｍ、６インチポケット７個
付き）をホットメルト接着剤を用いて接着した。1-5) Adhesion of Template A template (outer diameter 485 mm, with 7 6-inch pockets) made of a glass epoxy sheet is hot on the surface side of the polishing wafer holding member 10 attached to the ceramic surface plate 6. Bonding was done using a melt adhesive.
【００４７】このときの接着条件は８０℃、２分、０．
５ｋｇ／ｃｍ2の加重をかけて接着した。このようにし
てウエハ保持具を完成させた。The adhesion conditions at this time are 80 ° C., 2 minutes, and 0.
Adhesion was performed by applying a load of 5 kg / cm 2 . Thus, the wafer holder was completed.
【００４８】１−６）研磨試験 不二越機械製ＳＰＭ−１９片面研磨機を用いて、前記の
ウエハ保持具の評価を行った。1-6) Polishing Test Using the SPM-19 single-sided polishing machine manufactured by Fujikoshi Kikai, the above-mentioned wafer holder was evaluated.
【００４９】加工ウエハはシリコン単結晶Ｐ（１００）
ウエハ６インチ径を用い、研磨条件は表４に記載した。The processed wafer is a silicon single crystal P (100).
A 6 inch diameter wafer was used, and the polishing conditions are shown in Table 4.
【００５０】研磨後のウエハの形状精度を光波干渉式ウ
エハ平坦度検査機；ニデック製ＦＴ−９０Ａウエハ平坦
度検査計を用いて評価した。The shape accuracy of the wafer after polishing was evaluated using a light wave interference type wafer flatness tester; FT-90A wafer flatness tester manufactured by NIDEK.
【００５１】本ウエハ保持具を用いて研磨したウエハの
加工精度はＴＴＶ：０．８ミクロン、ＬＴＶ：０．１５
ミクロンであった。The processing accuracy of the wafer polished by using this wafer holder is TTV: 0.8 μm, LTV: 0.15.
Micron.
【００５２】（実施例２） ２−１）バッキングフィルムの作製 １８８ミクロンのポリエステルフィルム１（ルミラー、
東レ）に、表１に示す配合物Ｉを７００ミクロンの厚み
にコーティングし、湿式凝固させて発泡層２を形成し、
洗浄、乾燥工程をへて、図１に示すバッキングフィルム
１１を作製した。このバッキングフィルム１１の表層１
００ミクロンを研削し、図２に示すバッキングフィルム
を得た。(Example 2) 2-1) Preparation of backing film 188-micron polyester film 1 (Lumirror,
Toray) was coated with Formulation I shown in Table 1 to a thickness of 700 μm and wet-solidified to form a foam layer 2,
The backing film 11 shown in FIG. 1 was produced through the washing and drying steps. Surface layer 1 of this backing film 11
00 micron was ground to obtain a backing film shown in FIG.
【００５３】このフィルムをポリエステルから剥離し、
再度別のポリエステルフィルムに本バッキングフィルム
を接着剤を用いて接着させ、このフィルムの表層１００
ミクロンを研削し、図５に示すバッキングフィルム１３
を作製した。Peel this film from polyester,
The backing film is adhered to another polyester film again with an adhesive, and the surface layer 100 of this film is adhered.
Micron ground backing film 13 shown in FIG.
Was produced.
【００５４】２−２）離型フィルム付き粘着フィルムの
作製 実施例１で示した１−２）の工程と同様の方法で、離型
フィルムに、表３に示す光硬化型粘着剤配合物ＩＩＩを
２０ミクロンの厚みにコーティングし、離型フィルム付
き粘着フィルムを作製した。2-2) Preparation of pressure-sensitive adhesive film with release film In the same manner as in the step 1-2) shown in Example 1, the release film was coated with the photocurable pressure-sensitive adhesive composition III shown in Table 3. Was coated to a thickness of 20 μm to prepare an adhesive film with a release film.
【００５５】２−３）研磨用ウエハ保持部材の作製 前記バッキングフィルムのポリエステルフィルム１側
に、前記の粘着フィルムを貼り合わせ、光硬化性粘着フ
ィルム付きのバッキングフィルムを作製し、図５に示す
バッキングフィルム（研磨用ウエハ保持部材）を完成し
た。2-3) Preparation of Wafer Holding Member for Polishing The above-mentioned adhesive film is stuck to the polyester film 1 side of the above backing film to prepare a backing film with a photocurable adhesive film, and the backing shown in FIG. The film (polishing wafer holding member) was completed.
【００５６】２−４）紫外線照射による粘着剤層の硬化 前記研磨用ウエハ保持部材１０の離型シート５を剥が
し、実施例１と同様に、粘着剤面を研磨機のセラミック
製上定盤（４８５ｍｍ径）６に軽く貼り合わせた。その
後、重量５ｋｇの石英製オプチカルフラット７を均一に
のせ、３０分放置し、粘着剤層４を上定盤６に馴染ませ
た。この石英製オプチカルフラット７を介して、高圧水
銀灯（１ｋｗ）を用いて、紫外線を２０分、３０ｃｍの
距離から照射し、粘着剤層４を硬化させた。2-4) Curing of the pressure-sensitive adhesive layer by irradiation of ultraviolet rays The release sheet 5 of the polishing wafer holding member 10 was peeled off, and the pressure-sensitive adhesive surface was placed on the ceramic upper plate of the polishing machine (as in Example 1). (485 mm diameter) 6. Thereafter, a quartz optical flat 7 having a weight of 5 kg was evenly placed and left for 30 minutes to make the adhesive layer 4 fit into the upper platen 6. Through the quartz optical flat 7, a high-pressure mercury lamp (1 kw) was used to irradiate ultraviolet rays from a distance of 30 cm for 20 minutes to cure the pressure-sensitive adhesive layer 4.
【００５７】２−５）テンプレートの接着 セラミック製定盤６に貼り合わせた研磨用ウエハ保持部
材１０表面側に、ガラスエポキシシートから作製したテ
ンプレート（外径４８５ｍｍ、６インチポケット７個付
き）をホットメルト接着剤を用いて接着した。このとき
の接着条件は８０℃、２分、０．５ｋｇ／ｃｍ2の加重
をかけて接着した。このようにしてウエハ保持具を完成
させた。2-5) Adhesion of Template A template (outer diameter 485 mm, with 7 6-inch pockets) made of a glass epoxy sheet is hot melted on the surface side of the polishing wafer holding member 10 attached to the ceramic surface plate 6. Bonded using an adhesive. The bonding conditions at this time were 80 ° C. and 2 minutes, and a load of 0.5 kg / cm 2 was applied to bond. Thus, the wafer holder was completed.
【００５８】２−６）研磨試験 不二越機械製ＳＰＭ−１９片面研磨機を用いて前記のウ
エハ保持具の評価を行った。加工ウエハはシリコン単結
晶Ｐ（１００）ウエハ６インチ径、研磨条件は表４に記
載した。研磨後のウエハの形状精度を光波干渉式ウエハ
平坦度検査機；ニデック製ＦＴ−９０Ａウエハ平坦度検
査計を用いて評価した。2-6) Polishing Test The above-mentioned wafer holder was evaluated using an SPM-19 single-side polishing machine manufactured by Fujikoshi Kikai. The processed wafer is a silicon single crystal P (100) wafer having a diameter of 6 inches, and the polishing conditions are shown in Table 4. The shape accuracy of the polished wafer was evaluated using a light wave interference type wafer flatness inspection machine; FT-90A wafer flatness inspection instrument manufactured by NIDEK.
【００５９】本ウエハ保持具を用いて研磨したウエハの
加工精度は、ＴＴＶ：０．８ミクロン、ＬＴＶ：０．２
ミクロンであった。The processing accuracy of the wafer polished by using this wafer holder is TTV: 0.8 μm, LTV: 0.2.
Micron.
【００６０】（実施例３） ３−１）バッキングフィルムの作製 図１に示すように、１８８ミクロンのポリエステルフィ
ルム１（ルミラー、東レ社製）上に、表１に示す配合物
Ｉを７００ミクロンの厚みにコーティングし、湿式凝固
させ発泡層２を形成し、洗浄、乾燥工程をへて、図１に
示すバッキングフィルム１１を作製した。このバッキン
グフィルム１１の表層１００ミクロンを研削（図１のＣ
線で研削）し、図３に示すバッキングフィルム１２を得
た。(Example 3) 3-1) Preparation of Backing Film As shown in FIG. 1, on a 188-micron polyester film 1 (Lumirror, manufactured by Toray Industries, Inc.), the compound I shown in Table 1 was prepared to have a thickness of 700 microns. The backing film 11 shown in FIG. 1 was produced by coating the film to a thickness and wet-coagulating it to form a foam layer 2, followed by washing and drying steps. 100 μm surface layer of this backing film 11 is ground (C in FIG. 1).
Line) to obtain the backing film 12 shown in FIG.
【００６１】３−２）離型フィルム付き粘着フィルムの
作製 ５０ミクロンのポリエステルフィルム（ルミラー、東レ
社製）上に、表２に示す配合物ＩＩを２０ミクロンの厚
みにコーティングし、予め用意した１０ミクロンのスリ
ットの入ったマスクを介して紫外線を照射し、配合物Ｉ
Ｉを光硬化させた。その後、純水とアルコールの混合物
を用いて配合物ＩＩの未硬化部分を除去し、平行条に１
０ミクロンの凹凸のある離型フィルムを作製した。この
離型フィルムに、表３に示す光硬化型粘着剤配合物ＩＩ
Ｉを２０ミクロンの厚みにコーティングし、離型フィル
ム付き粘着フィルムを得た。3-2) Preparation of Adhesive Film with Release Film 50-micron polyester film (Lumirror, manufactured by Toray) was coated with the formulation II shown in Table 2 to a thickness of 20 micron and prepared in advance 10. Irradiate with UV light through a mask with micron slits to form compound I
I was photocured. Then, the uncured portion of the compound II was removed using a mixture of pure water and alcohol, and the parallel strip was
A release film having 0 micron unevenness was prepared. To this release film, the photocurable pressure sensitive adhesive composition II shown in Table 3 was added.
I was coated to a thickness of 20 μm to obtain a pressure-sensitive adhesive film with a release film.
【００６２】３−３）研磨用ウエハ保持部材の作製 図３に示すように、前記バッキングフィルム１２のポリ
エステルフィルム１側に、前記の粘着フィルムを貼り合
わせ、光硬化性粘着フィルム付きのバッキングフィルム
（研磨用ウエハ保持部材）１０を得た。3-3) Fabrication of Wafer Holding Member for Polishing As shown in FIG. 3, the above-mentioned adhesive film is attached to the polyester film 1 side of the backing film 12, and a backing film with a photocurable adhesive film ( A polishing wafer holding member) 10 was obtained.
【００６３】３−４）テンプレートの接着 セラミック製定盤６に、ガラスエポキシシートから作製
したテンプレート（外径４８５ｍｍ、６インチポケット
７個付き）を両面粘着テープを用いて接着した。このと
きの接着条件は、４０℃、１分、０．５ｋｇ／ｃｍ2の
加重をかけて接着した。3-4) Adhesion of Template A template (outer diameter 485 mm, with 7 6-inch pockets) made of a glass epoxy sheet was adhered to the ceramic surface plate 6 using a double-sided adhesive tape. The bonding conditions at this time were 40 ° C., 1 minute, and a load of 0.5 kg / cm 2 was applied for bonding.
【００６４】３−５）紫外線照射による粘着剤層の硬化 前記バッキングフィルムを５．９９インチに正確にカッ
トし、離型フィルムを剥がし、粘着剤面を研磨機のセラ
ミック製の上定盤（ガラスエポキシシートから製作した
テンプレートの６インチポケットの部分）に軽く貼り合
わせた。その後、外径５．９９インチの石英製オプチカ
ルフラットをポケットに挿入し、その上から重量５ｋ
ｇ、外径４８５ｍｍの石英製オプチカルフラットを均一
にのせ、３０分放置し、粘着剤層を上定盤に馴染ませ
た。この石英製オプチカルフラットを介して、高圧水銀
灯（１ｋｗ）を用いて紫外線を２０分、３０ｃｍの距離
から照射し、粘着剤層を硬化させた（図４）。3-5) Curing of Adhesive Layer by Ultraviolet Irradiation The backing film was accurately cut into 5.99 inches, the release film was peeled off, and the adhesive surface was coated with a ceramic upper plate (glass) of a polishing machine. It was lightly attached to the 6-inch pocket of the template made from an epoxy sheet). After that, insert a quartz optical flat with an outer diameter of 5.99 inches into the pocket and weigh 5k from above.
g, a quartz optical flat having an outer diameter of 485 mm was evenly placed and allowed to stand for 30 minutes to allow the pressure-sensitive adhesive layer to conform to the upper platen. Through the quartz optical flat, a high-pressure mercury lamp (1 kw) was used to irradiate ultraviolet rays from a distance of 30 cm for 20 minutes to cure the adhesive layer (FIG. 4).
【００６５】３−６）研磨試験 不二越機械製ＳＰＭ−１９片面研磨機を用いて、前記の
ウエハ保持具の評価を行った。3-6) Polishing Test Using the SPM-19 single-sided polishing machine manufactured by Fujikoshi Kikai, the above-mentioned wafer holder was evaluated.
【００６６】加工ウエハはシリコン単結晶Ｐ（１００）
ウエハ６インチ径を用い、研磨条件は表４に記載した。The processed wafer is a silicon single crystal P (100).
A 6 inch diameter wafer was used, and the polishing conditions are shown in Table 4.
【００６７】研磨後のウエハの形状精度を光波干渉式ウ
エハ平坦度検査機；ニデック製ＦＴ−９０Ａウエハ平坦
度検査計を用いて評価した。The shape accuracy of the wafer after polishing was evaluated using a light wave interference type wafer flatness tester; FT-90A wafer flatness tester manufactured by NIDEK.
【００６８】本ウエハ保持具を用いて研磨したウエハの
加工精度はＴＴＶ：０．７ミクロン、ＬＴＶ：０．１５
ミクロンであった。The processing accuracy of the wafer polished using this wafer holder is TTV: 0.7 micron, LTV: 0.15.
Micron.
【００６９】（比較例１） ４−１）バッキングフィルムの作製 １８８ミクロンのポリエステルフィルム（ルミラー、東
レ社製）に、表１に示す配合物Ｉを７００ミクロンの厚
みにコーティングし、湿式凝固させて発泡層を形成し、
洗浄、乾燥工程をへて、図１に示すバッキングフィルム
１１を作製した。このバッキングフィルム１１の表層１
００ミクロンを研削し、バッキングフィルム１２を作製
した。(Comparative Example 1) 4-1) Preparation of Backing Film A 188-micron polyester film (Lumirror, manufactured by Toray Industries, Inc.) was coated with the compound I shown in Table 1 to a thickness of 700 microns and wet-solidified. Forming a foam layer,
The backing film 11 shown in FIG. 1 was produced through the washing and drying steps. Surface layer 1 of this backing film 11
The backing film 12 was produced by grinding 00 microns.
【００７０】４−２）粘着フィルム付きバッキングフィ
ルムの作製 前記バッキングフィルムのポリエステルフィルム側に、
市販の両面テープ（住友スリーエム製ＳＴ４４２）を貼
り合わせ、粘着フィルム付きのバッキングフィルムを得
た。4-2) Preparation of backing film with adhesive film On the polyester film side of the backing film,
A commercially available double-sided tape (ST442 manufactured by Sumitomo 3M) was attached to obtain a backing film with an adhesive film.
【００７１】このバッキングフィルムを加工ウエハと同
じ径の６インチに打ち抜き、６インチ径の粘着フィルム
付きバッキングフィルムを作製した。This backing film was punched into a 6-inch wafer having the same diameter as the processed wafer to produce a backing film with a 6-inch diameter adhesive film.
【００７２】４−３）テンプレートの定盤への接着 セラミック定盤に、ガラスエポキシシートから作製した
テンプレートを両面テープを用いて接着した。接着は手
で加圧し定盤に貼り合わせた。4-3) Adhesion of Template to Surface Plate A template prepared from a glass epoxy sheet was adhered to a ceramic surface plate using a double-sided tape. Adhesion was performed by applying pressure to the surface plate by hand.
【００７３】４−４）バッキングフィルムの定盤への接
着 前記バッキングフィルムの離型シートを剥がし、粘着剤
面を研磨機のセラミック製上定盤に手で貼り合わせた。
この時、先に貼り合わせた前記テンプレートのポケット
部分に合わせるように貼った。３０分間放置し、粘着剤
を上定盤に馴染ませた。このようにして比較例３のウエ
ハ保持具を完成させた。4-4) Adhesion of Backing Film to Surface Plate The release sheet of the backing film was peeled off, and the adhesive surface was manually attached to the ceramic upper surface plate of the polishing machine.
At this time, the template was attached so as to match the pocket portion of the template previously attached. After leaving it for 30 minutes, the adhesive was made to fit on the upper platen. Thus, the wafer holder of Comparative Example 3 was completed.
【００７４】４−５）研磨試験 不二越機械製ＳＰＭ−１９片面研磨機を用いて前記のウ
エハ保持具の評価を行った。加工ウエハはシリコン単結
晶Ｐ（１００）ウエハ６インチ径とし、研磨条件は表４
に記載した。研磨後のウエハの形状精度を光波干渉式ウ
エハ平坦度検査機；ニデック製ＦＴ−９０Ａウエハ平坦
度検査計を用いて評価した。4-5) Polishing Test The above-mentioned wafer holder was evaluated using an SPM-19 single-side polishing machine manufactured by Fujikoshi Kikai. The processed wafer is a silicon single crystal P (100) wafer with a diameter of 6 inches, and the polishing conditions are shown in Table 4.
Described in. The shape accuracy of the polished wafer was evaluated using a light wave interference type wafer flatness inspection machine; FT-90A wafer flatness inspection instrument manufactured by NIDEK.
【００７５】本ウエハ保持具を用いて研磨したウエハの
加工精度はＴＴＶ：１．５ミクロン、ＬＴＶ：０．９ミ
クロンであった。目標の加工精度は達成出来なかった。The processing accuracy of the wafer polished by using this wafer holder was TTV: 1.5 μm and LTV: 0.9 μm. The target processing accuracy could not be achieved.
【００７６】[0076]
【表１】 [Table 1]
【００７７】[0077]
【表２】 [Table 2]
【００７８】[0078]
【表３】 [Table 3]
【００７９】[0079]
【表４】 [Table 4]
【００８０】[0080]
【発明の効果】本発明によれば、ウエハ保持部材の粘着
剤層を定盤面に張り付けた後、電子線照射によりその粘
着剤層を硬化させてウエハ保持部材を定盤に接着するこ
とができるので、ウエハ保持部材を気泡介在等の問題な
く高精度に、しかも容易に研磨機定盤上に粘着すること
ができ、しかも研磨作業中における厚み変化を最小とし
て、ウエハの研磨仕上がり厚み精度を向上することがで
き、また研磨作業の工程においてウエハの装着及び取り
外しが容易であり、従って、能率が良く、自動化にも適
している。According to the present invention, after the pressure-sensitive adhesive layer of the wafer holding member is attached to the surface plate surface, the pressure-sensitive adhesive layer can be cured by electron beam irradiation to bond the wafer holding member to the surface plate. As a result, the wafer holding member can be adhered to the polishing machine surface plate with high accuracy without any problems such as air bubble inclusion, and the thickness change during polishing work can be minimized to improve the accuracy of the finished thickness of the wafer. In addition, it is easy to load and unload the wafer in the process of polishing work, and therefore it is efficient and suitable for automation.
【図１】本発明の研磨用ウエハ保持部材に使用する基材
上に発泡層を積層した状態を示す断面図である。FIG. 1 is a cross-sectional view showing a state in which a foam layer is laminated on a base material used for a polishing wafer holding member of the present invention.
【図２】図２で示す発泡層の表層をバフした状態を示す
断面図である。FIG. 2 is a cross-sectional view showing a state where the surface layer of the foam layer shown in FIG. 2 is buffed.
【図３】本発明の研磨用ウエハ保持部材の一実施例の断
面図である。FIG. 3 is a sectional view of an embodiment of a polishing wafer holding member of the present invention.
【図４】本発明の研磨用ウエハ保持部材を、定盤上へ張
り付ける操作を示す概略図である。FIG. 4 is a schematic view showing an operation of sticking the polishing wafer holding member of the present invention onto a surface plate.
【図５】本発明の研磨用ウエハ保持部材の他の実施例の
断面図である。FIG. 5 is a cross-sectional view of another embodiment of the polishing wafer holding member of the present invention.
１…基材 ２…発泡層 ３…スキン層 ４…粘着剤層 ５…離型シート ６…定盤 ７…石英製オプチカルフラット ８…電子線照射手段 １０…研磨用ウエハ保持部材 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Foam layer 3 ... Skin layer 4 ... Adhesive layer 5 ... Release sheet 6 ... Surface plate 7 ... Quartz optical flat 8 ... Electron beam irradiation means 10 ... Polishing wafer holding member
Claims (6)
形成されており、研磨用ウエハを装着し得る表面層と、
該基材の裏面に形成された電子線硬化型粘着剤層と、を
有する研磨用ウエハ保持部材。1. A transparent sheet-like base material, and a surface layer formed on the surface of the base material, on which a polishing wafer can be mounted.
An electron beam curable pressure-sensitive adhesive layer formed on the back surface of the base material, and a polishing wafer holding member.
細な凹凸が形成されている請求項１に記載の研磨用ウエ
ハ保持部材。2. The polishing wafer holding member according to claim 1, wherein fine irregularities for removing air are formed on the back surface of the pressure-sensitive adhesive layer.
能に貼り付けられた離型シートを有する請求項１に記載
の研磨用ウエハ保持部材。3. The polishing wafer holding member according to claim 1, further comprising a release sheet releasably attached to the back surface side of the pressure-sensitive adhesive layer.
に記載の研磨用ウエハ保持部材。4. The surface layer has a foam layer.
The wafer holding member for polishing as described in 1.
電子線硬化型粘着剤層を研磨機の定盤上に装置する行
程、および該研磨用ウエハ保持部材の表面層側から電子
線を照射して該粘着剤層を硬化させて該研磨用ウエハ保
持部材を該定盤へ接着させる行程、 を包含する研磨用ウエハ保持部材の定盤への装着方法。5. A step of installing the electron beam curing type adhesive layer of the polishing wafer holding member according to claim 1 on a surface plate of a polishing machine, and an electron beam from the surface layer side of the polishing wafer holding member. Irradiating to cure the pressure-sensitive adhesive layer and adhering the polishing wafer holding member to the surface plate, and a method of mounting the polishing wafer holding member on the surface plate.
に、前記研磨用ウエハ保持部材の上に透明な平板を載置
する行程を、包含する請求項５に記載の研磨用ウエハ保
持部材の定盤への装着方法。6. The polishing wafer holding member according to claim 5, further comprising a step of placing a transparent flat plate on the polishing wafer holding member before the step of irradiating the electron beam. How to attach to the surface plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1296595A JP2851808B2 (en) | 1995-01-30 | 1995-01-30 | Polishing wafer holding member and method of mounting the wafer holding member on a surface plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1296595A JP2851808B2 (en) | 1995-01-30 | 1995-01-30 | Polishing wafer holding member and method of mounting the wafer holding member on a surface plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08203849A true JPH08203849A (en) | 1996-08-09 |
| JP2851808B2 JP2851808B2 (en) | 1999-01-27 |
Family
ID=11819968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1296595A Expired - Fee Related JP2851808B2 (en) | 1995-01-30 | 1995-01-30 | Polishing wafer holding member and method of mounting the wafer holding member on a surface plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2851808B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09253964A (en) * | 1996-03-15 | 1997-09-30 | Lintec Corp | Base material for adhesive tape, adhesive tape using this base material, and manufacture of thin base material |
| JP2001198796A (en) * | 2000-01-20 | 2001-07-24 | Toray Ind Inc | Polishing method |
| JP2002355754A (en) * | 2001-05-31 | 2002-12-10 | Rodel Nitta Co | Method of manufacturing backing material for holding polished object |
| JP2010208019A (en) * | 2008-08-01 | 2010-09-24 | Sekisui Chem Co Ltd | Double-faced adhesive tape for fixing abrasive, and method for manufacturing the same |
| JP2010221306A (en) * | 2009-03-19 | 2010-10-07 | Fujibo Holdings Inc | Holding sheet |
| JP2016074052A (en) * | 2014-10-03 | 2016-05-12 | 富士紡ホールディングス株式会社 | Tape for fixing polishing pad and polishing pad |
-
1995
- 1995-01-30 JP JP1296595A patent/JP2851808B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09253964A (en) * | 1996-03-15 | 1997-09-30 | Lintec Corp | Base material for adhesive tape, adhesive tape using this base material, and manufacture of thin base material |
| JP2001198796A (en) * | 2000-01-20 | 2001-07-24 | Toray Ind Inc | Polishing method |
| JP2002355754A (en) * | 2001-05-31 | 2002-12-10 | Rodel Nitta Co | Method of manufacturing backing material for holding polished object |
| JP4659273B2 (en) * | 2001-05-31 | 2011-03-30 | ニッタ・ハース株式会社 | Manufacturing method of backing material for holding workpiece |
| JP2010208019A (en) * | 2008-08-01 | 2010-09-24 | Sekisui Chem Co Ltd | Double-faced adhesive tape for fixing abrasive, and method for manufacturing the same |
| JP2010221306A (en) * | 2009-03-19 | 2010-10-07 | Fujibo Holdings Inc | Holding sheet |
| JP2016074052A (en) * | 2014-10-03 | 2016-05-12 | 富士紡ホールディングス株式会社 | Tape for fixing polishing pad and polishing pad |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2851808B2 (en) | 1999-01-27 |
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