JPH08100233A - Soft thin aluminum strip for medium-and low-voltage anode for electrolytic capacitor and its production - Google Patents
Soft thin aluminum strip for medium-and low-voltage anode for electrolytic capacitor and its productionInfo
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- JPH08100233A JPH08100233A JP23788494A JP23788494A JPH08100233A JP H08100233 A JPH08100233 A JP H08100233A JP 23788494 A JP23788494 A JP 23788494A JP 23788494 A JP23788494 A JP 23788494A JP H08100233 A JPH08100233 A JP H08100233A
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- aluminum
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- etching
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、エッチング時に均一に
且つ適度に溶解して、静電容量を十分に高めることがで
きる電解コンデンサ中低圧陽極用アルミニウム軟質箔及
びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an aluminum soft foil for medium and low voltage anodes for electrolytic capacitors, which can be uniformly and moderately dissolved during etching to sufficiently increase electrostatic capacity, and a method for producing the same.
【０００２】[0002]
【従来の技術】周知のように、従来、中低圧電解コンデ
ンサ用アルミニウム箔の製造に際しては、出発原料とし
て９９．９９重量％以上の高純度のアルミニウム地金を
使用しなければならないというのが常識であった。2. Description of the Related Art As is well known, it has been common knowledge that in the manufacture of aluminum foil for medium- and low-voltage electrolytic capacitors, a high-purity aluminum ingot of 99.99% by weight or more must be used as a starting material. Met.
【０００３】これは、必ずしも理論的に明瞭な裏付けに
よるものではなく、むしろ、現実に低純度地金を原料と
して得たアルミニウム箔は、後にこれを電解エッチング
して表面の粗面化を図り、コンデンサ箔として利用せん
としても、アルミニウム箔中の不純物が粗面化の際に種
々の不都合をもたらすという実使用面での問題があった
ためである。This is not necessarily due to a theoretically clear proof, but rather, the aluminum foil obtained from a low-purity metal as a raw material is actually subjected to electrolytic etching to roughen the surface, This is because even if it is not used as a capacitor foil, there is a problem in practical use that impurities in the aluminum foil cause various inconveniences during roughening.
【０００４】従来、性能面で安定したコンデンサ箔を提
供するために、主として地金の一層の高純度化と、アル
ミニウム箔に施すエッチング処理技術の改良が行われて
きたのもそのためである。また、軟質箔の場合は結晶粒
径を適当な大きさにすることにより静電容量の向上と強
度の向上が同時に求められている。This is also the reason why, in order to provide a capacitor foil having stable performance, the base metal has been further refined and the etching treatment technique applied to the aluminum foil has been improved. Further, in the case of a soft foil, it is required to improve the electrostatic capacity and the strength at the same time by setting the crystal grain size to an appropriate size.
【０００５】ところで、低純度のアルミニウム箔を使用
すると、不純物による粗大な析出物が箔表面に存在し、
エッチングを施すと粗大孔が生じるという難点がある。
このため、低純度のアルミニウム箔を使用すると、箔表
面の拡大を図ることができない。しかし、高純度のアル
ミニウム箔は高価であるため、得られる電解コンデンサ
用陽極箔も高価になるという欠点があった。When a low-purity aluminum foil is used, coarse precipitates due to impurities are present on the foil surface,
When etching is performed, there is a problem that coarse holes are generated.
Therefore, if a low-purity aluminum foil is used, the foil surface cannot be enlarged. However, since the high-purity aluminum foil is expensive, the resulting anode foil for electrolytic capacitors is also expensive.
【０００６】このような事情の下に、比較的低純度のア
ルミニウム箔を使用した電解コンデンサ用陽極箔とし
て、次のようなアルミニウム箔が開発され提案されてい
る。特開平４−２４７８５５号公報においては、Ｆｅ：
０．０３重量％以下、Ｓｉ：０．０３重量％以下、Ｃ
ｕ：０．０１重量％以下、Ａｌ：９９．９３〜９９．９
８重量％よりなるアルミニウム鋳塊を準備する。このア
ルミニウム鋳塊に、温度が５９０℃以上、加熱時間が３
時間以上の条件で均質化処理を施す。その後、熱間粗圧
延を施して、所定厚のアルミニウム板を作製する。この
アルミニウム板に１パスにおける圧下率が４０重量％以
下であり、全パスにおける総圧下率が８５重量％以上に
なるようにして、熱間仕上げ圧延を施す。また、熱間仕
上げ圧延終了時におけるアルミニウム板の温度を２５０
℃〜３００℃として、アルミニウム板を巻き上げる。そ
の後、アルミニウム板を巻き戻しながら、冷間圧延を施
す。Under such circumstances, the following aluminum foil has been developed and proposed as an anode foil for electrolytic capacitors using an aluminum foil of relatively low purity. In Japanese Patent Laid-Open No. 4-247855, Fe:
0.03 wt% or less, Si: 0.03 wt% or less, C
u: 0.01 wt% or less, Al: 99.93 to 99.9
An aluminum ingot composed of 8% by weight is prepared. This aluminum ingot is heated to a temperature of 590 ° C. or higher and a heating time of 3
Homogenization is performed under the condition of time or longer. Then, hot rough rolling is performed to produce an aluminum plate having a predetermined thickness. This aluminum plate is subjected to hot finish rolling so that the rolling reduction in one pass is 40% by weight or less and the total rolling reduction in all passes is 85% by weight or more. In addition, the temperature of the aluminum plate at the end of hot finish rolling is set to 250
The aluminum plate is wound up at a temperature of ℃ to 300 ℃. Then, cold rolling is performed while rewinding the aluminum plate.
【０００７】一方、特公平１−３８８６５号公報におい
ては、純度９９．９４重量％以上で、Ｆｅ：３００ｐｐ
ｍ以下、Ｓｉ：３００ｐｐｍ以下及びＣｕ：１００ｐｐ
ｍ以下のアルミニウムＤＣ鋳塊を用いて、６００℃以上
で３時間以上保持する均質化処理を行った後、直ちにほ
ぼ均質化温度と同じ温度で熱間圧延処理加工を開始し、
５５０℃から４５０℃に下る温度領域の通過を５分以内
で終了させる。そして、熱間圧延終了温度が３１０℃以
下となるように熱間圧延を行い、更に冷間圧延と最終箔
圧延を行うことによりアルミニウム箔を製造する。On the other hand, in Japanese Patent Publication No. 1-38865, the purity is 99.94% by weight or more and Fe: 300 pp.
m or less, Si: 300 ppm or less and Cu: 100 pp
Using an aluminum DC ingot of m or less, after carrying out a homogenizing treatment of holding at 600 ° C. or more for 3 hours or more, immediately, hot rolling processing is started at about the same temperature as the homogenizing temperature,
The passage of the temperature range from 550 ° C. to 450 ° C. is completed within 5 minutes. Then, hot rolling is performed so that the hot rolling finish temperature becomes 310 ° C. or lower, and further cold rolling and final foil rolling are performed to manufacture an aluminum foil.
【０００８】特開平２−５１２１２号公報には、Ｆｅ：
０．００１３重量％、Ｓｉ：０．００１３〜０．００３
０重量％、Ｃｕ：０．０２５〜０．００５０重量％、不
可避的不純物：０．００３０重量％以下で、残部Ａｌの
鋳塊を、温度５５０〜６００℃で均質化処理し、次いで
熱間圧延及び冷間圧延により所定の厚さの箔とした後、
この箔の表面を洗浄し、更に２７０〜３８０℃の温度で
焼鈍を行うことによりアルミニウム箔を製造する技術が
開示されている。In JP-A-2-51212, Fe:
0.0013% by weight, Si: 0.0013 to 0.003
0% by weight, Cu: 0.025 to 0.0050% by weight, inevitable impurities: 0.0030% by weight or less, the ingot of the balance Al is homogenized at a temperature of 550 to 600 ° C., and then hot rolled. And after making a foil of a predetermined thickness by cold rolling,
A technique for manufacturing an aluminum foil by washing the surface of this foil and further annealing at a temperature of 270 to 380 ° C. is disclosed.
【０００９】そして、これらの公知技術においては、電
解エッチング性及び陽極酸化性が向上すると記載されて
いる。And, in these known techniques, it is described that the electrolytic etching property and the anodic oxidation property are improved.
【００１０】[0010]
【発明が解決しようとする課題】しかしながら、上述の
各公報に記載された従来のアルミニウム箔には、次のよ
うな問題点がある。即ち、特公平１−３８８６５号公報
及び特開平４−２４７８５５号公報に記載のアルミニウ
ム箔は、成分及び均質化処理等の製造条件を規定するこ
とにより、エッチング時の粗大孔の形成を防止して電解
エッチング性を向上させている。しかし、均質化処理を
５９０℃以上の高温度で行うため、電気化学的に安定な
Ａｌ6Ｆｅが電気化学的に不安定なＡｌ3Ｆｅに変化して
いまい、エッチング時に粗大孔を形成していまい、電解
エッチング性が十分でない。このため、電解エッチング
後のアルミニウム箔は静電容量が十分ではないという問
題点がある。However, the conventional aluminum foils described in the above publications have the following problems. That is, the aluminum foils described in JP-B-1-38865 and JP-A-4-247855 prevent formation of coarse holes during etching by defining manufacturing conditions such as components and homogenization treatment. The electrolytic etching property is improved. However, since the homogenization treatment is performed at a high temperature of 590 ° C. or higher, electrochemically stable Al 6 Fe is not transformed into electrochemically unstable Al 3 Fe, and coarse pores are formed during etching. However, the electrolytic etching property is not sufficient. Therefore, there is a problem that the electrostatic capacity of the aluminum foil after electrolytic etching is not sufficient.
【００１１】特開平２−５１２１２号公報は、成分条
件、均質化処理温度及び最終焼鈍温度を規定することに
より、エッチング時の粗大孔の形成を防止して電解エッ
チング性を向上させている。しかし、この従来技術にお
いては、最終焼鈍時における温度を規定しているだけで
あり、その最終焼鈍条件がエッチング時の粗大孔の形成
防止には不十分であるため、電解エッチング性が低く、
静電容量が高いアルミニウム箔を得ることができないと
いう問題点がある。In Japanese Patent Laid-Open No. 51212/1990, by defining the component conditions, the homogenization treatment temperature and the final annealing temperature, the formation of coarse holes during etching is prevented and the electrolytic etching property is improved. However, in this conventional technique, only the temperature during the final annealing is specified, and since the final annealing conditions are insufficient to prevent the formation of coarse holes during etching, the electrolytic etching property is low,
There is a problem that an aluminum foil having a high capacitance cannot be obtained.
【００１２】本発明はかかる問題点に鑑みてなされたも
のであって、エッチング時の粗大孔の形成を防止し電解
エッチング性を向上させて静電容量が高い優れた電解コ
ンデンサ中低圧陽極用アルミニウム軟質箔及びその製造
方法を提供することを目的とする。The present invention has been made in view of the above problems, and is an excellent aluminum electrolytic capacitor for medium and low voltage anodes which has a high electrostatic capacity by preventing the formation of large holes during etching and improving the electrolytic etching property. An object of the present invention is to provide a soft foil and a manufacturing method thereof.
【００１３】[0013]
【課題を解決するための手段】本発明に係る電解コンデ
ンサ中低圧陽極アルミニウム軟質箔は、アルミニウムの
純度が９９．９８重量％以上であると共に、Ｆｅ：０．
００１乃至０．００５重量％、Ｓｉ：０．００１乃至
０．００５重量％、Ｚｎ：０．００１５重量％未満、Ｃ
ｕ：０．００１乃至０．００５重量％であり、残部がア
ルミニウム及び不可避的不純物からなる純アルミニウム
材であって、その表面の酸化皮膜厚さが４０Å以下であ
り、表面の結晶粒径が４５乃至６５μｍであることを特
徴とする。The low-voltage anode aluminum soft foil for electrolytic capacitors according to the present invention has an aluminum purity of 99.98% by weight or more and Fe: 0.
001 to 0.005% by weight, Si: 0.001 to 0.005% by weight, Zn: less than 0.0015% by weight, C
u: 0.001 to 0.005% by weight, the balance being a pure aluminum material consisting of aluminum and unavoidable impurities, the surface oxide film thickness is 40 Å or less, and the surface grain size is 45 To 65 μm.
【００１４】本発明に係る電解コンデンサ中低圧陽極ア
ルミニウム軟質箔の製造方法は、アルミニウムの純度が
９９．９８重量％以上であると共に、Ｆｅ：０．００１
乃至０．００５重量％、Ｓｉ：０．００１乃至０．００
５重量％、Ｚｎ：０．００１５重量％未満、Ｃｕ：０．
００１乃至０．００５重量％であり、残部がアルミニウ
ム及び不可避的不純物からなる純アルミニウム材を、５
５０〜５００℃の温度に７乃至１５時間加熱する１回の
均質化処理のみを行い、その後、このアルミニウム材を
熱間圧延及び冷間圧延により厚さが１００μｍ以下の箔
にし、最終焼鈍を酸素濃度３００ｐｐｍ以下の雰囲気中
にて焼鈍温度３１０乃至３３０℃、焼鈍時間１乃至２０
時間の条件で行うことを特徴とする。In the method for producing a low-voltage anode aluminum soft foil in an electrolytic capacitor according to the present invention, the purity of aluminum is 99.98% by weight or more, and Fe: 0.001.
To 0.005% by weight, Si: 0.001 to 0.00
5% by weight, Zn: less than 0.0015% by weight, Cu: 0.
001 to 0.005% by weight, the balance being 5% pure aluminum material consisting of aluminum and inevitable impurities.
Only one homogenization treatment of heating to a temperature of 50 to 500 ° C. for 7 to 15 hours is performed, and then this aluminum material is hot-rolled and cold-rolled to a foil having a thickness of 100 μm or less, and the final annealing is performed with oxygen. Annealing temperature 310 to 330 ° C., annealing time 1 to 20 in an atmosphere having a concentration of 300 ppm or less
The feature is that it is performed under the condition of time.
【００１５】[0015]
【作用】本願発明者等はアルミニウム地金の高純度化に
よるコンデンサ箔の性能向上は、コストが上昇してしま
うため、近時の技術開発姿勢に反するという観点から、
アルミニウム地金の圧延の段階で可及的に不純物のコン
デンサ箔性能への悪影響を抑制すべく、種々実験研究を
重ねて本発明を完成するに至った。From the viewpoint that the inventors of the present application are in contradiction to the recent technological development stance, the improvement of the performance of the capacitor foil due to the high purity of the aluminum ingot increases the cost.
In order to suppress the adverse effect of impurities on the performance of the capacitor foil as much as possible at the stage of rolling of aluminum ingot, various experiments and studies have been repeated to complete the present invention.
【００１６】本発明に係る純アルミニウム材は、上記課
題を達成するために、従来の特開平４−２４７８５５号
公報、特公平１−３８８６５公報の純アルミニウムとは
異なり、均質化処理の条件を５５０〜５００℃の温度で
７乃至１５時間の加熱時間とし、この均質化処理を１回
のみ行うこととする。更に、この均質化処理条件に加え
て、最終焼鈍条件を詳細に検討してその最適条件を細か
く規定した。その結果、表面の酸化皮膜厚を４０Å以
下、表面の結晶粒径を４５〜６５μｍにすることによ
り、エッチング時の粗大孔の形成を防止して電解エッチ
ング性を向上させ、静電容量を高めることが可能になっ
た。In order to achieve the above-mentioned object, the pure aluminum material according to the present invention is different from the pure aluminum disclosed in Japanese Patent Laid-Open No. 4-247855 and Japanese Patent Publication No. 1-38865 in that the homogenizing condition is 550. The heating time is 7 to 15 hours at a temperature of ˜500 ° C., and this homogenization treatment is performed only once. Furthermore, in addition to this homogenization treatment condition, the final annealing condition was studied in detail and the optimum condition was specified in detail. As a result, the oxide film thickness on the surface is 40 Å or less, and the crystal grain size on the surface is 45 to 65 μm to prevent the formation of coarse holes during etching to improve the electrolytic etching property and increase the capacitance. Became possible.
【００１７】次に、本発明のアルミニウム箔中の各成分
の組成限定理由について説明する。アルミニウム純度 アルミニウムの純度は９９．９８重量％以上必要であ
る。これより低い純度では、不純物の量が多くなり、静
電容量の低下が生じるので好ましくない。Next, the reasons for limiting the composition of each component in the aluminum foil of the present invention will be explained. Aluminum Purity The purity of aluminum must be 99.98% by weight or more. If the purity is lower than the above range, the amount of impurities increases and the capacitance decreases, which is not preferable.
【００１８】Ｆｅ Ｆｅは晶出物又は析出物としての金属間化合物を生成さ
せ、エッチング性の改善には不可欠な元素である。適正
な数及び大きさの晶出物又は析出物を生成させるために
は、Ｆｅ含有量を０．００１乃至０．００５重量％の範
囲に設定する必要がある。しかし、Ｆｅ含有量が０．０
０１重量％未満では、晶出物又は析出物の数が不十分に
なって均一な適度のエッチング面が得られず、静電容量
の低下を生じる。また、Ｆｅ含有量が０．００５重量％
を超えると、晶出物が大きくなりすぎて粗大なエッチン
グピットが発生し易くなり、静電容量の低下を生じる。 Fe Fe is an element essential for improving the etching property because it produces an intermetallic compound as a crystallized substance or a precipitate. The Fe content must be set in the range of 0.001 to 0.005% by weight in order to generate a proper number and size of crystallized substances or precipitates. However, the Fe content is 0.0
If it is less than 01% by weight, the number of crystallized substances or precipitates is insufficient, and a uniform and appropriate etching surface cannot be obtained, resulting in a decrease in capacitance. Further, the Fe content is 0.005% by weight.
If it exceeds, crystallized substances become too large and coarse etching pits are easily generated, resulting in a decrease in capacitance.
【００１９】Ｓｉ Ｓｉは、Ｆｅと同様に、晶出物又は析出物としての金属
間化合物を生成させ、エッチング性の改善には不可欠な
元素である。適正な数及び大きさの晶出物又は析出物を
生成させるためには、Ｓｉ含有量を０．００１重量％以
上に規制する必要がある。逆に、Ｓｉ含有量が０．００
５重量％を超えると、晶出物が大きくなりすぎて粗大な
エッチングピットが発生し易くなり、静電容量の低下を
生じる。 Si Like Si, Si is an element that is essential for improving the etching property by forming an intermetallic compound as a crystallized substance or a precipitate. In order to generate an appropriate number and size of crystallized substances or precipitates, it is necessary to regulate the Si content to 0.001% by weight or more. Conversely, the Si content is 0.00
If it exceeds 5% by weight, the crystallized substance becomes too large and coarse etching pits are likely to occur, resulting in a decrease in capacitance.
【００２０】Ｚｎ ＺｎはＡｌに添加させることによりエッチング性を向上
させる。その添加量を０．００１５重量％以下としたの
は、Ｚｎ含有量が０．００１５重量％を超えると適正な
エッチング条件の設定が困難となり、均一な適度のエッ
チング面が得られず、静電容量の低下が生じるためであ
る。 Zn Zn improves the etching property when added to Al. The amount added is set to 0.0015% by weight or less, because when the Zn content exceeds 0.0015% by weight, it becomes difficult to set an appropriate etching condition, and a uniform and appropriate etching surface cannot be obtained. This is because the capacity is reduced.
【００２１】Ｃｕ Ｃｕもまた溶解性に寄与するものであるが、０．００１
重量％未満ではエッチング性の低下をもたらし、０．０
０５重量％を超えるとエッチング後にＣｕが析出し、静
電容量の低下が生じる。 Cu Cu also contributes to the solubility, but 0.001
If it is less than 10% by weight, the etching property is deteriorated, and 0.0
If it exceeds 05% by weight, Cu is deposited after etching and the capacitance is lowered.
【００２２】不可避的不純物 なお、他のＭｎ、Ｃｒ、Ｔｉ等の元素は不可避的不純物
として０．００１重量％程度までその含有が許容され
る。 Inevitable Impurities Other elements such as Mn, Cr, and Ti are allowed to be contained as inevitable impurities up to about 0.001% by weight.
【００２３】表面の酸化皮膜の厚さ アルミニウム箔の表面に形成される酸化皮膜の厚さは、
４０Å以下である。表面の酸化皮膜の厚さが４０Åを超
えると、エッチング溶液に対する濡れ性が悪く、表面の
エッチング性が低下する。このため、アルミニウム箔の
表面積の拡大を図ることができず、静電容量の低下が生
じる。 Thickness of oxide film on the surface The thickness of the oxide film formed on the surface of the aluminum foil is
It is less than 40Å. When the thickness of the oxide film on the surface exceeds 40Å, the wettability with the etching solution is poor and the etching property on the surface is deteriorated. For this reason, the surface area of the aluminum foil cannot be increased, and the capacitance is reduced.
【００２４】表面の結晶粒径：４５乃至６５μｍ 表面の結晶粒径が４５μｍ未満であると、表面の皮膜抵
抗にバラツキが生じるため、エッチングによる粗面化が
不均一となり、エッチングによる表面積の拡大を図るこ
とが困難である。このため、静電容量を高めることがで
きない。一方、表面の結晶粒径が６５μｍを超えると、
強度が低下する。このため、結晶粒径は４５乃至６５μ
ｍにする必要がある。 Surface crystal grain size: 45 to 65 μm If the surface crystal grain size is less than 45 μm, the film resistance of the surface varies, so that roughening due to etching becomes uneven and the surface area due to etching increases. It is difficult to plan. Therefore, the capacitance cannot be increased. On the other hand, when the crystal grain size on the surface exceeds 65 μm,
Strength decreases. Therefore, the crystal grain size is 45 to 65μ.
need to be m.
【００２５】本発明に係る純アルミニウム箔は、鋳造−
均質化処理−熱間圧延−冷間圧延−洗浄−最終焼鈍の連
続する工程で製造されるが、各工程の条件は以下のよう
に設定する必要がある。The pure aluminum foil according to the present invention is cast-
Although it is manufactured in a continuous process of homogenizing treatment-hot rolling-cold rolling-cleaning-final annealing, the conditions of each process must be set as follows.
【００２６】均質化熱処理工程 均熱温度は５５０〜５００℃である。この均質化処理温
度が５５０℃を超えると、電解エッチング性に良好なＡ
ｌ6Ｆｅが電解エッチング性に悪影響を及ぼすＡｌ3Ｆｅ
に変化してしまい、均一な適度のエッチング面が得られ
なくなり、静電容量の低下が生じる。また、均質化処理
温度が５００℃未満では、析出物が増大し、均一な適度
のエッチング面が得られなくなり、静電容量の低下が生
じる。 Homogenizing heat treatment step The soaking temperature is 550 to 500 ° C. If the homogenization treatment temperature exceeds 550 ° C., A having a good electrolytic etching property is obtained.
l 6 Fe adversely affects the electroetching property Al 3 Fe
, The uniform and appropriate etched surface cannot be obtained, and the capacitance is lowered. Further, if the homogenization treatment temperature is lower than 500 ° C., the amount of precipitates increases, a uniform and appropriate etching surface cannot be obtained, and the capacitance decreases.
【００２７】均熱時間は７乃至１５時間である。均質化
のための加熱時間が７時間未満では均質化処理の効果が
十分でなく、均一な適度のエッチング面が得られなくな
り、得られた陽極アルミニウム箔の静電容量が低下す
る。一方、均熱時間が１６時間を超えると、粗大な析出
物が生じるため、均一な適度のエッチング面が得られく
なり、同様に静電容量の低下が生じる。The soaking time is 7 to 15 hours. If the heating time for homogenization is less than 7 hours, the effect of the homogenization treatment is not sufficient, a uniform and appropriate etching surface cannot be obtained, and the capacitance of the obtained anode aluminum foil decreases. On the other hand, if the soaking time exceeds 16 hours, coarse precipitates are generated, so that a uniform and appropriate etching surface cannot be obtained, and the electrostatic capacity is similarly reduced.
【００２８】均質化熱処理の回数は１回とする。均質化
熱処理を２回以上行うと、冷却時に粗大な析出物が生じ
るため、均一な適度のエッチング面が得られなくなり、
静電容量の低下を生じる。The homogenizing heat treatment is performed once. If the homogenizing heat treatment is performed twice or more, coarse precipitates are generated during cooling, and a uniform and appropriate etching surface cannot be obtained.
This causes a decrease in capacitance.
【００２９】洗浄工程 箔の洗浄を有機系洗浄液を使用しナイロンブラシにより
箔表面に疵を入れないように、また残油量が５ｍｇ／ｍ
2以下になるように行う。 Washing step The foil is washed with an organic washing solution using a nylon brush so as not to scratch the foil surface, and the residual oil amount is 5 mg / m 2.
Do less than 2 .
【００３０】最終焼鈍処理 最終焼鈍は、酸素濃度３００ｐｐｍ以下の雰囲気中にて
焼鈍温度を３１０乃至３３０℃にし、焼鈍時間を１乃至
２０時間に設定して行うことにより、表面の酸化皮膜厚
が４０Å以下、表面の結晶粒径が４５μｍ〜６５μｍの
アルミニウム箔を得る。 Final Annealing Treatment The final annealing is performed by setting the annealing temperature to 310 to 330 ° C. and the annealing time to 1 to 20 hours in an atmosphere having an oxygen concentration of 300 ppm or less, so that the surface oxide film thickness is 40Å. Hereinafter, an aluminum foil having a surface crystal grain size of 45 μm to 65 μm is obtained.
【００３１】最終焼鈍を酸素濃度が３００ｐｐｍを超え
る雰囲気中で行うと、表面の酸化皮膜厚が４０Åを超
え、エッチング溶液に対する濡れ性が悪くなり、エッチ
ング性が低下する。このため、エッチングによる表面積
の拡大を図ることができず、静電容量の低下を生ずる。
また、焼鈍温度が３１０℃より低い温度でアルミニウム
箔を焼鈍すると、表面の結晶粒径が４５μｍ未満にな
り、前述の如く、表面皮膜抵抗にばらつきが生じるた
め、エッチングによるアルミニウム箔の表面積の拡大を
図ることができず、静電容量の低下が生ずる。３３０℃
より高い温度でアルミニウム箔を焼鈍すると、表面の結
晶粒径が６５μｍを超えてしまい、強度が低下する。When the final annealing is carried out in an atmosphere having an oxygen concentration of more than 300 ppm, the thickness of the oxide film on the surface exceeds 40Å, the wettability with an etching solution deteriorates, and the etching property deteriorates. For this reason, the surface area cannot be increased by etching, and the capacitance is reduced.
Further, when the aluminum foil is annealed at a temperature lower than 310 ° C., the crystal grain size on the surface becomes less than 45 μm, and the surface film resistance varies as described above. Therefore, it is possible to increase the surface area of the aluminum foil by etching. It cannot be achieved, and the capacitance is reduced. 330 ° C
When the aluminum foil is annealed at a higher temperature, the crystal grain size on the surface exceeds 65 μm and the strength is reduced.
【００３２】最終焼鈍時間は１乃至２０時間に設定す
る。最終焼鈍時間が１時間未満では、表面の結晶粒径が
４５μｍ未満になり、表面皮膜抵抗にばらつきが生じ
る。このため、エッチングによる表面積の拡大を図るこ
とができず、静電容量の低下が生ずる。最終焼鈍時間が
２０時間を超えると、表面の酸化皮膜の厚さが４０Åを
超え、エッチング溶液に対する濡れ性が悪く、エッチン
グ性が低下する。このため、エッチングによる表面積の
拡大を図ることができず、静電容量の低下が生ずる。The final annealing time is set to 1 to 20 hours. If the final annealing time is less than 1 hour, the crystal grain size on the surface will be less than 45 μm, and the surface film resistance will vary. For this reason, the surface area cannot be increased by etching, and the capacitance is reduced. When the final annealing time exceeds 20 hours, the thickness of the oxide film on the surface exceeds 40Å, the wettability with the etching solution is poor, and the etching property is deteriorated. For this reason, the surface area cannot be increased by etching, and the capacitance is reduced.
【００３３】なお、本発明に係る製造方法を満足するア
ルミニウム材を２７０℃という低温度では２０時間以上
加熱しても表面の結晶粒径は４５μｍにならない。ま
た、３８０℃という高温度の場合には、１時間未満の加
熱時間であっても、表面の結晶粒径は６５μｍを超えて
しまう。Even if an aluminum material satisfying the manufacturing method according to the present invention is heated at a low temperature of 270 ° C. for 20 hours or more, the crystal grain size on the surface does not become 45 μm. Further, when the temperature is as high as 380 ° C., the crystal grain size on the surface exceeds 65 μm even if the heating time is less than 1 hour.
【００３４】[0034]
【実施例】以下、本発明の実施例について、詳細に説明
する。実施例１ 先ず、成分組成による影響を比較した試験結果について
説明する。下記表１に示す化学成分を有するアルミニウ
ム箔について、同表に示す規定内の製造条件により均質
化処理まで終了させ、その後、熱間圧延、冷間圧延及び
洗浄工程のみで製品箔厚９０μｍのアルミニウム箔を製
造し、その箔を表１に示す条件にて最終焼鈍を行い、調
質をＯ材にした。得られたアルミニウム箔をサンプルと
し、表面の酸化皮膜厚、静電容量、強度及び表面の結晶
粒径を調査した。EXAMPLES Examples of the present invention will be described in detail below. Example 1 First, the test results comparing the effects of the component compositions will be described. Aluminum foil having the chemical composition shown in Table 1 below is finished up to homogenization treatment under the manufacturing conditions within the rules shown in the same table, and then aluminum having a product foil thickness of 90 μm is subjected only to hot rolling, cold rolling and washing steps. A foil was manufactured, and the foil was subjected to final annealing under the conditions shown in Table 1 to obtain a tempered material. Using the obtained aluminum foil as a sample, the thickness of the oxide film on the surface, the electrostatic capacity, the strength and the crystal grain size of the surface were investigated.
【００３５】[0035]
【表１】 [Table 1]
【００３６】酸化皮膜厚測定条件 純水１リットル中に、ほう酸５０ｇ＋ほう砂１００ｇを
含む溶液をアルミニウム箔上に接着したガスケットに注
入し、アルミニウム箔の対極を白金とし、ＬＣＲメータ
ーにて測定した。但し、測定周波数：１２０Ｈｚ、等価
回路：抵抗と並列、測定面積１．１ｃｍ2とした。Oxide film thickness measurement conditions A solution containing 50 g of boric acid + 100 g of borax was poured into 1 liter of pure water into a gasket adhered to an aluminum foil, and platinum was used as the counter electrode of the aluminum foil, and the thickness was measured with an LCR meter. However, the measurement frequency was 120 Hz, the equivalent circuit was parallel to the resistor, and the measurement area was 1.1 cm 2 .
【００３７】電解エッチング条件 純水１リットル中に、１０体積％塩酸＋０．１体積％硫
酸＋２．２体積％塩化アルミニウムを含む電解液（温
度：４０±１℃）を使用し、電流密度を０．４５Ａ／ｃ
ｍ2にして、交流電圧（５０Ｈｚ）を印加し、１分間エ
ッチングした。Electrolytic etching conditions An electrolytic solution (temperature: 40 ± 1 ° C.) containing 10% by volume hydrochloric acid + 0.1% by volume sulfuric acid + 2.2% by volume aluminum chloride in 1 liter of pure water was used, and the current density was 0. .45 A / c
An alternating voltage (50 Hz) was applied at m 2 , and etching was performed for 1 minute.
【００３８】化成処理条件 純水１リットル中に、リン酸：０．２５ｍｌ及びリン酸
アンモニウム：１．４ｇを含む処理液により、液温が７
０±２．５℃、化成処理時間が８分、化成電圧が２０Ｖ
の条件で、化成処理した。Chemical conversion treatment conditions A treatment liquid containing phosphoric acid: 0.25 ml and ammonium phosphate: 1.4 g in 1 liter of pure water gave a liquid temperature of 7
0 ± 2.5 ℃, formation time is 8 minutes, formation voltage is 20V
The chemical conversion treatment was performed under the conditions of.
【００３９】静電容量測定 純水１リットル中に、ホウ酸：５０ｇ、クエン酸：５０
ｇ、アンモニア：５０ｍｌを含む処理液中で、液温を３
０±５℃の保持し、周波数：１２０Ｈｚで万能ブリッジ
により静電容量を測定した。Capacitance measurement: Boric acid: 50 g, citric acid: 50 in 1 liter of pure water.
g, ammonia: in the treatment liquid containing 50 ml, the liquid temperature is 3
Capacitance was measured by a universal bridge at a frequency of 120 Hz while keeping at 0 ± 5 ° C.
【００４０】強度測定 電解エッチング後に試験片（１０ｍｍ幅×１００ｍｍ長
さ）を圧延方向に平行に切り出し、チャック部とチャッ
ク部の間の長さが５０ｍｍになるように固定し、破断強
度を測定した。Strength Measurement After electrolytic etching, a test piece (10 mm width × 100 mm length) was cut out in parallel with the rolling direction, fixed so that the length between the chuck portions was 50 mm, and the breaking strength was measured. .
【００４１】結晶粒径測定 電解エッチング前の箔の表面を研磨し、電解エッチング
した後、ミクロ組織を観察した。この観察結果から線分
法により結晶粒径を測定した。Crystal grain size measurement The surface of the foil before electrolytic etching was polished and electrolytically etched, and then the microstructure was observed. From this observation result, the crystal grain size was measured by the line segment method.
【００４２】このようにして測定した表面の酸化皮膜
厚、静電容量、強度及び表面の結晶粒径の各測定結果を
前記表１に合わせて示す。この表１からわかるように、
本発明の実施例Ｎｏ．１〜４に係るアルミニウム箔は静
電容量及び強度が高い。本発明の範囲から外れる比較例
Ｎｏ．５〜１２に係るアルミニウム箔は静電容量及び強
度のいずれかが低い。The measurement results of the thickness of the oxide film on the surface, the capacitance, the strength and the crystal grain size of the surface thus measured are also shown in Table 1 above. As you can see from Table 1,
Example No. 3 of the present invention. The aluminum foils according to 1-4 have high capacitance and strength. Comparative example No. outside the scope of the present invention. The aluminum foil according to 5 to 12 has low capacitance or strength.
【００４３】実施例２ 次に、均熱条件による影響を試験した結果について説明
する。下記表２に示す化学組成を有するアルミニウム箔
について、同表に示す条件の製造工程により均質化処理
まで終了させ、その後、熱間圧延、冷間圧延及び洗浄工
程のみで製品箔厚９０μｍのアルミニウム箔を製造し、
その箔を下記表２に示す条件にて最終焼鈍を行い、調質
をＯ材にした。得られたアルミニウム箔をサンプルと
し、表面の酸化皮膜厚、静電容量、強度及び表面の結晶
粒径を調査した。 Example 2 Next, the results of testing the effect of soaking conditions will be described. Aluminum foil having the chemical composition shown in the following Table 2 is finished up to the homogenization treatment by the manufacturing process under the conditions shown in the same table, and then the aluminum foil having a product foil thickness of 90 μm is subjected only to hot rolling, cold rolling and washing steps. Manufacture
The foil was subjected to final annealing under the conditions shown in Table 2 below, and the temper was set to O material. Using the obtained aluminum foil as a sample, the thickness of the oxide film on the surface, the electrostatic capacity, the strength and the crystal grain size of the surface were investigated.
【００４４】[0044]
【表２】 [Table 2]
【００４５】酸化皮膜厚測定条件 純水１リットル中に、ホウ酸５０ｇ＋ホウ砂１００ｇを
含む溶液をアルミニウム箔上に接着したガスケットに注
入し、アルミニウム箔の対極を白金にして、ＬＣＲメー
ターにて測定した。但し、測定周波数：１２０Ｈｚ、等
価回路：抵抗と並列、測定面積：１．１ｃｍ2とした。Oxide film thickness measurement conditions Into 1 liter of pure water, a solution containing 50 g of boric acid + 100 g of borax was poured into a gasket adhered to an aluminum foil, and the counter electrode of the aluminum foil was set to platinum, and measured with an LCR meter. did. However, the measurement frequency was 120 Hz, the equivalent circuit was parallel to the resistor, and the measurement area was 1.1 cm 2 .
【００４６】電解エッチング条件 純水１リットル中に、１０体積％塩酸＋０．１体積％硫
酸＋２．２体積％塩化アルミニウムを含む電解液（４０
±１℃）を用い、電流密度０．４５Ａ／ｃｍ2で、交流
５０Ｈｚにより、１分間エッチングした。Electrolytic Etching Conditions An electrolytic solution containing 40 vol% hydrochloric acid + 0.1 vol% sulfuric acid + 2.2 vol% aluminum chloride in 1 liter of pure water (40
(± 1 ° C.) at a current density of 0.45 A / cm 2 and an alternating current of 50 Hz for 1 minute.
【００４７】化成条件 純水１リットル中に、リン酸：０．２５ｍｌ及びリン酸
アンモニウム：１．４ｇを含有し、液温７０±２．５
℃、化成時間８分、化成電圧２０Ｖで化成処理した。Chemical conversion conditions: 1 liter of pure water contains 0.25 ml of phosphoric acid and 1.4 g of ammonium phosphate, and the liquid temperature is 70 ± 2.5.
Chemical conversion treatment was performed at a temperature of 8 ° C for 8 minutes at a chemical conversion voltage of 20V.
【００４８】静電容量測定 純水１リットル中に、ホウ酸：５０ｇ、クエン酸：５０
ｇ、アンモニア：５０ｍｌを含有する処理液を使用し、
液温３０±５℃、周波数：１２０Ｈｚの条件で、万能ブ
リッジにより静電容量を測定した。Capacitance measurement In 1 liter of pure water, boric acid: 50 g, citric acid: 50
g, ammonia: using a treatment liquid containing 50 ml,
The capacitance was measured by a universal bridge under the conditions of a liquid temperature of 30 ± 5 ° C. and a frequency of 120 Hz.
【００４９】強度測定 電解エッチング後に試験片（１０ｍｍ幅×１００ｍｍ長
さ）を圧延方向に平行に切り出し、チャック部とチャッ
ク部の間の長さが５０ｍｍになるように固定し、破断強
度を測定した。Strength measurement After electrolytic etching, a test piece (10 mm width × 100 mm length) was cut out in parallel with the rolling direction, fixed so that the length between the chuck portions was 50 mm, and the breaking strength was measured. .
【００５０】結晶粒径測定 電解エッチング前の箔の表面を研磨し、電解エッチング
後、ミクロ組織を観察した。その結果から線分法により
結晶粒径を測定した。Measurement of crystal grain size The surface of the foil before electrolytic etching was polished, and after the electrolytic etching, the microstructure was observed. From the results, the crystal grain size was measured by the line segment method.
【００５１】表面の酸化皮膜厚、静電容量、強度及び表
面の結晶粒径の各測定結果を表２に合わせて示す。この
表２から明らかなように、本発明の実施例Ｎｏ．１３〜
１６に係るアルミニウム箔は静電容量及び強度が高い。
これに対し、本発明の範囲から外れる比較例Ｎｏ．１７
〜２１に係るアルミニウム箔は静電容量又は強度のいず
れかが低い。実施例３ 次に、最終焼鈍条件の影響を試験した結果について説明
する。下記表３に示す組成のアルミニウム箔について、
同表に示す条件の製造工程により均質化処理まで終了さ
せ、その後、熱間圧延、冷間圧延、洗浄工程のみで製品
箔厚９０μｍのアルミニウム箔を製造し、その箔を表３
に示す条件にて最終焼鈍を行い、調質をＯ材にした。得
られたアルミニウム箔をサンプルとし、表面の酸化皮膜
厚、静電容量、強度及び表面の結晶粒径を調査した。Table 2 shows the measurement results of the surface oxide film thickness, capacitance, strength and surface crystal grain size. As is clear from Table 2, Example No. 3 of the present invention. 13-
The aluminum foil according to 16 has high capacitance and strength.
On the other hand, Comparative Example No. 1 out of the range of the present invention. 17
The aluminum foils according to Nos. 21 to 21 have low capacitance or strength. Example 3 Next, the result of testing the effect of the final annealing condition will be described. Regarding the aluminum foil having the composition shown in Table 3 below,
The homogenization process is completed by the manufacturing process under the conditions shown in the table, and thereafter, an aluminum foil having a product foil thickness of 90 μm is manufactured only by hot rolling, cold rolling, and a washing process, and the foil is shown in Table 3.
The final annealing was performed under the conditions shown in (1), and the temper was changed to O material. Using the obtained aluminum foil as a sample, the thickness of the oxide film on the surface, the electrostatic capacity, the strength and the crystal grain size of the surface were investigated.
【００５２】[0052]
【表３】 [Table 3]
【００５３】酸化皮膜厚測定条件 純水１リットル中に、ホウ酸５０ｇ＋ホウ砂１００ｇを
含む溶液をアルミニウム箔上に接着したガスケットに注
入し、アルミニウム箔の対極を白金として、ＬＣＲメー
ターにて測定した。但し、測定周波数：１２０Ｈｚ、等
価回路：抵抗と並列、測定面積：１．１ｃｍ2とした。Oxide film thickness measurement conditions Into 1 liter of pure water, a solution containing 50 g of boric acid + 100 g of borax was poured into a gasket adhered to an aluminum foil, and platinum was used as the counter electrode of the aluminum foil, and the thickness was measured with an LCR meter. . However, the measurement frequency was 120 Hz, the equivalent circuit was parallel to the resistor, and the measurement area was 1.1 cm 2 .
【００５４】電解エッチング条件 純水１リットル中に、１０体積％塩酸＋０．１体積％硫
酸＋２．２体積％塩化アルミニウムを含む電解液（４０
±１℃）を用い、電流密度０．４５Ａ／ｃｍ2で、交流
５０Ｈｚを印加し、１分間エッチングした。Electrolytic etching conditions An electrolytic solution containing 40% by volume of hydrochloric acid + 0.1% by volume of sulfuric acid + 2.2% by volume of aluminum chloride in 1 liter of pure water (40
± 1 ° C.), a current density of 0.45 A / cm 2 , and an alternating current of 50 Hz were applied, and etching was performed for 1 minute.
【００５５】化成処理条件 純水１リットル中に、リン酸：０．２５ｍｌ及びリン酸
アンモニウム：１．４ｇを含む処理液を使用し、液温７
０±２．５℃で、化成時間８分及び化成電圧２０Ｖの条
件で化成処理した。Chemical conversion treatment conditions A treatment liquid containing phosphoric acid: 0.25 ml and ammonium phosphate: 1.4 g in 1 liter of pure water was used, and the liquid temperature was 7
A chemical conversion treatment was performed at 0 ± 2.5 ° C. under conditions of a chemical conversion time of 8 minutes and a chemical conversion voltage of 20V.
【００５６】静電容量測定 純水１リットル中に、ホウ酸：５０ｇ、クエン酸：５０
ｇ、アンモニア：５０ｍｌを含有する処理液を使用し、
液温３０±５℃で、周波数：１２０Ｈｚの条件で、万能
ブリッジにより静電容量を測定した。Capacitance measurement Boric acid: 50 g, citric acid: 50 in 1 liter of pure water
g, ammonia: using a treatment liquid containing 50 ml,
The capacitance was measured by a universal bridge under the condition of a liquid temperature of 30 ± 5 ° C. and a frequency of 120 Hz.
【００５７】強度測定 電解エッチング後に試験片（１０ｍｍ幅×１００ｍｍ長
さ）を圧延方向に平行に切り出し、チャック部とチャッ
ク部との間の長さが５０ｍｍになるように固定し、破断
強度を測定した。Strength measurement After electrolytic etching, a test piece (10 mm width × 100 mm length) was cut out in parallel with the rolling direction and fixed so that the length between the chuck parts was 50 mm, and the breaking strength was measured. did.
【００５８】結晶粒径測定 電解エッチング前の箔の表面を研磨し、電解エッチング
した後、ミクロ組織を観察した。その結果から線分法に
より結晶粒径を測定した。Crystal grain size measurement The surface of the foil before electrolytic etching was polished and electrolytically etched, and then the microstructure was observed. From the results, the crystal grain size was measured by the line segment method.
【００５９】表面の酸化皮膜厚、静電容量、強度及び表
面の結晶粒径の各測定結果を表３に合わせて示す。その
結果から明らかなように、本発明の実施例Ｎｏ．２２〜
２５に係るアルミニウム箔は静電容量及び強度が高い。
これに対し、本発明の範囲から外れる比較例Ｎｏ．２６
〜３０に係るアルミニウム箔は静電容量又は強度のいず
れかが低い。Table 3 shows the measurement results of the thickness of the oxide film on the surface, the electrostatic capacity, the strength and the crystal grain size of the surface. As is clear from the result, the embodiment No. 22 ~
The aluminum foil according to No. 25 has high capacitance and strength.
On the other hand, Comparative Example No. 1 out of the range of the present invention. 26
The aluminum foil according to ~ 30 has low capacitance or strength.
【００６０】[0060]
【発明の効果】以上説明したように、本発明によれば、
エッチング時の粗大孔の発生が防止され、均一にエッチ
ングすることが可能で電解エッチング性が優れたアルミ
ニウム箔を得ることができる。従って、エッチングによ
り表面積を拡大して高い静電容量を示す中低圧陽極用電
解箔の製造に供することができ、本発明を適用すること
により高性能の電解コンデンサを得ることができるとい
う工業上顕著な効果を奏するものである。As described above, according to the present invention,
Generation of coarse pores during etching is prevented, uniform etching is possible, and an aluminum foil having excellent electrolytic etching properties can be obtained. Therefore, it is industrially remarkable that the surface area can be expanded by etching and the electrolytic foil for medium- and low-voltage anodes showing a high capacitance can be manufactured, and a high-performance electrolytic capacitor can be obtained by applying the present invention. It has a great effect.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｇ 9/00 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI technical display location H01G 9/00
Claims (2)
以上であると共に、Ｆｅ：０．００１乃至０．００５重
量％、Ｓｉ：０．００１乃至０．００５重量％、Ｚｎ：
０．００１５重量％未満、Ｃｕ：０．００１乃至０．０
０５重量％であり、残部がアルミニウム及び不可避的不
純物からなる純アルミニウム材であって、その表面の酸
化皮膜厚さが４０Å以下であり、表面の結晶粒径が４５
乃至６５μｍであることを特徴とする電解コンデンサ中
低圧陽極用アルミニウム軟質箔。1. The purity of aluminum is 99.98% by weight.
In addition to the above, Fe: 0.001 to 0.005% by weight, Si: 0.001 to 0.005% by weight, Zn:
Less than 0.0015% by weight, Cu: 0.001 to 0.0
05% by weight, the balance being pure aluminum material consisting of aluminum and unavoidable impurities, the surface oxide film thickness is 40 Å or less, and the surface grain size is 45
Aluminum soft foil for low-voltage anodes in electrolytic capacitors, characterized in that
以上であると共に、Ｆｅ：０．００１乃至０．００５重
量％、Ｓｉ：０．００１乃至０．００５重量％、Ｚｎ：
０．００１５重量％未満、Ｃｕ：０．００１乃至０．０
０５重量％であり、残部がアルミニウム及び不可避的不
純物からなる純アルミニウム材を、５５０〜５００℃の
温度に７乃至１５時間加熱する１回の均質化処理のみを
行い、その後、このアルミニウム材を熱間圧延及び冷間
圧延により厚さが１００μｍ以下の箔にし、最終焼鈍を
酸素濃度３００ｐｐｍ以下の雰囲気中にて焼鈍温度３１
０乃至３３０℃、焼鈍時間１乃至２０時間の条件で行う
ことを特徴とする電解コンデンサ中低圧陽極用アルミニ
ウム軟質箔の製造方法。2. The purity of aluminum is 99.98% by weight.
In addition to the above, Fe: 0.001 to 0.005% by weight, Si: 0.001 to 0.005% by weight, Zn:
Less than 0.0015% by weight, Cu: 0.001 to 0.0
The pure aluminum material, which is 05% by weight and the balance is aluminum and unavoidable impurities, is subjected to only one homogenization treatment in which the pure aluminum material is heated to a temperature of 550 to 500 ° C. for 7 to 15 hours, and then this aluminum material is heated. The foil having a thickness of 100 μm or less is formed by hot rolling and cold rolling, and the final annealing is performed at an annealing temperature of 31 in an atmosphere having an oxygen concentration of 300 ppm or less.
A method for producing an aluminum soft foil for a medium- and low-voltage anode for an electrolytic capacitor, which is performed under conditions of 0 to 330 ° C. and an annealing time of 1 to 20 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23788494A JPH08100233A (en) | 1994-09-30 | 1994-09-30 | Soft thin aluminum strip for medium-and low-voltage anode for electrolytic capacitor and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23788494A JPH08100233A (en) | 1994-09-30 | 1994-09-30 | Soft thin aluminum strip for medium-and low-voltage anode for electrolytic capacitor and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08100233A true JPH08100233A (en) | 1996-04-16 |
Family
ID=17021855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23788494A Pending JPH08100233A (en) | 1994-09-30 | 1994-09-30 | Soft thin aluminum strip for medium-and low-voltage anode for electrolytic capacitor and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08100233A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269092A (en) * | 1999-03-18 | 2000-09-29 | Kobe Steel Ltd | Aluminum foil for electrolytic capacitor having superior ability to etch, and its manufacture |
| JP2007146269A (en) * | 2004-12-21 | 2007-06-14 | Showa Denko Kk | Aluminum material for electrolytic capacitor electrode, method for producing electrode material for electrolytic capacitor, and anode material for aluminum electrolytic capacitor and aluminum electrolytic capacitor |
| JP2012144809A (en) * | 2005-05-31 | 2012-08-02 | Showa Denko Kk | Aluminum material for electrolytic capacitor electrode, method for manufacturing electrode material for electrolytic capacitor, anode material for aluminum electrolytic capacitor, and aluminum electrolytic capacitor |
-
1994
- 1994-09-30 JP JP23788494A patent/JPH08100233A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269092A (en) * | 1999-03-18 | 2000-09-29 | Kobe Steel Ltd | Aluminum foil for electrolytic capacitor having superior ability to etch, and its manufacture |
| JP2007146269A (en) * | 2004-12-21 | 2007-06-14 | Showa Denko Kk | Aluminum material for electrolytic capacitor electrode, method for producing electrode material for electrolytic capacitor, and anode material for aluminum electrolytic capacitor and aluminum electrolytic capacitor |
| JP2012144809A (en) * | 2005-05-31 | 2012-08-02 | Showa Denko Kk | Aluminum material for electrolytic capacitor electrode, method for manufacturing electrode material for electrolytic capacitor, anode material for aluminum electrolytic capacitor, and aluminum electrolytic capacitor |
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