JPH0743380A - Semiconductor capacitive acceleration sensor - Google Patents
Semiconductor capacitive acceleration sensorInfo
- Publication number
- JPH0743380A JPH0743380A JP5185828A JP18582893A JPH0743380A JP H0743380 A JPH0743380 A JP H0743380A JP 5185828 A JP5185828 A JP 5185828A JP 18582893 A JP18582893 A JP 18582893A JP H0743380 A JPH0743380 A JP H0743380A
- Authority
- JP
- Japan
- Prior art keywords
- movable electrode
- acceleration sensor
- electrode
- semiconductor
- supports
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/006—Details of instruments used for thermal compensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、例えば自動車の加速度
状態,揺れの状態などを検出し、その検出信号を処理し
て各種制御などに使用される超小型の半導体容量形加速
度センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultra-compact semiconductor capacitance type acceleration sensor used for various controls such as detecting an acceleration state and a shaking state of an automobile and processing the detection signal.
【0002】[0002]
【従来の技術】シリコン基板の表面に、例えばポリシリ
コンからなるシリコン層と、例えばPSG(Phosp
ho Silicate Glass、燐珪酸ガラス)
からなる犠牲層とを多層に形成し、マイクロマシン技術
によって加工後犠牲層を弗酸などによって取り除き、超
小型の多層構造体を形成する技術(以下多層マイクロマ
シン技術と称する)が開発されている。このような技術
を用いて超小型の半導体容量形加速度センサが開発され
ている。2. Description of the Related Art A silicon layer made of, for example, polysilicon and a PSG (Phosp) are formed on the surface of a silicon substrate.
ho Silicate Glass, phosphosilicate glass)
A technique (hereinafter, referred to as a multi-layer micro-machine technique) for forming an ultra-small multi-layer structure by forming a multi-layered sacrificial layer made of, and removing the sacrificial layer with hydrofluoric acid after processing by the micro-machine technique has been developed. An ultra-compact semiconductor capacitive acceleration sensor has been developed using such a technique.
【0003】図5は多層マイクロマシン技術によって作
られた従来の半導体容量形加速度センサの一例を示す斜
視図であり、半導体基板1と、それぞれポリシリコンか
らなり、この半導体基板1の上面に酸化シリコンなどか
らなる絶縁層1Aを介して設けられた支持体21と、そ
の一端が支持体21に直角に結合され並行に配置された
水平方向の同一長さの梁22Aおよび22Bと、これら
梁22Aおよび22Bの他端に結合された水平方向の可
動電極23と、この可動電極23の下面に所定の間隙を
隔ててシリコン基板1の上面に絶縁層1Aを介して設け
られた固定電極31と、シリコン基板1の上面に絶縁層
1Aを介して設けられた支持体42Aおよび42Bと、
これら支持体42Aおよび42Bにその周辺が結合され
可動電極23の上面に所定の間隙を隔てて設けられた固
定電極41とからなり、可動電極23から梁22A,2
2Bおよび支持第21を介して端子Mが、固定電極31
から端子S1 が、固定電極41から支持体42Bを介し
て端子S2 がそれぞれ引き出される。FIG. 5 is a perspective view showing an example of a conventional semiconductor capacitive acceleration sensor manufactured by a multi-layer micromachining technique. The semiconductor substrate 1 is made of polysilicon, and the upper surface of the semiconductor substrate 1 is made of silicon oxide or the like. A support body 21 provided via an insulating layer 1A made of, and beams 22A and 22B of the same length in the horizontal direction, one end of which is perpendicularly coupled to the support body 21 and arranged in parallel, and these beams 22A and 22B. A horizontal movable electrode 23 coupled to the other end of the movable electrode 23, a fixed electrode 31 provided on the lower surface of the movable electrode 23 on the upper surface of the silicon substrate 1 with an insulating layer 1A in between, and a silicon substrate. Supports 42A and 42B provided on the upper surface of 1 via an insulating layer 1A,
The supporting members 42A and 42B are connected at their periphery to the fixed electrode 41 provided on the upper surface of the movable electrode 23 with a predetermined gap therebetween.
2B and the support 21 through the terminal M, the fixed electrode 31
From the terminal S 1 is, the terminal S 2 is drawn from each of the fixed electrode 41 via the support member 42B.
【0004】ここでポリシリコンは、不純物がドープさ
れて固有抵抗は、例えば1オームセンチ程度に低下して
おり、導電性になっている。なお、ポリシリコンに換え
て不純物をドープして導電性とした単結晶シリコンを用
いても勿論差支えないが、ポリシリコンは単結晶シリコ
ンより低コストとなる(このことは以下も同様であ
る)。Here, the polysilicon is doped with impurities, and its specific resistance is lowered to, for example, about 1 ohm centimeter, so that it becomes conductive. It is of course possible to use conductive single crystal silicon doped with impurities instead of polysilicon, but the cost of polysilicon is lower than that of single crystal silicon (this also applies to the following).
【0005】この半導体容量形加速度センサの動作は次
の通りである。可動電極23に垂直方向の加速度が加わ
ると、可動電極23は垂直方向の力を受け、梁22A,
22Bは支持体21に結合された一方の端を支点として
撓み、可動電極23をP矢印方向に回動する。可動電極
23の回動によって、この可動電極23と固定電極31
との間は、例えば接近してこの間の静電容量は増大し、
この可動電極23と固定電極41との間は逆に離れてこ
の間の静電容量は減少する。これら静電容量の値を端子
M,S1 間および端子M,S2 間から取り出し、差動増
幅器などによって信号処理をして加えられた加速度を検
出する。The operation of this semiconductor capacitive acceleration sensor is as follows. When vertical acceleration is applied to the movable electrode 23, the movable electrode 23 receives a vertical force, and the beams 22A,
22B bends with one end connected to the support 21 as a fulcrum, and rotates the movable electrode 23 in the P arrow direction. By the rotation of the movable electrode 23, the movable electrode 23 and the fixed electrode 31
, And the capacitance between them increases, for example,
On the contrary, the movable electrode 23 and the fixed electrode 41 are separated from each other, and the capacitance between them is reduced. The values of these capacitances are taken out from between the terminals M and S 1 and between the terminals M and S 2 , and signal processing is performed by a differential amplifier or the like to detect the applied acceleration.
【0006】図6は、同様多層マイクロマシン技術によ
って作られた従来の半導体容量形加速度センサの異なる
例を示す斜視図であり、半導体基板1と、それぞれポリ
シリコンからなり、この半導体基板1の上面に絶縁層1
Aを介して設けられた支持体21と、その一端が支持体
21に結合された水平方向の梁24Aと、その一端がこ
の支持体21に結合され、前記梁24Aと同一長さで反
対方向に設けられた梁24Bと、その重心点から一横方
向、例えば右方向にずれたところに設けられた四角形の
窓の縦方向の一内辺および他内辺に、これら梁24Aお
よび24Bの他端がそれぞれ結合された水平方向の可動
電極23と、この可動電極23の梁24A,24Bより
一方の側、図2では左側の下面に所定の間隙を隔ててシ
リコン基板1の上面に絶縁層1Aを介して設けられた固
定電極31と、この反対側、すなわち右側の下面に所定
の間隙を隔ててシリコン基板1の上面に絶縁層1Aを介
して設けられた固定電極41とからなり、可動電極23
から梁24A(24B)および支持体21を介して端子
Mが、固定電極31から端子S1 が、固定電極41から
端子S2 がそれぞれ引き出される。FIG. 6 is a perspective view showing a different example of a conventional semiconductor capacitive acceleration sensor similarly manufactured by the multi-layer micromachining technique. The semiconductor substrate 1 is made of polysilicon and is formed on the upper surface of the semiconductor substrate 1. Insulation layer 1
A support 21 provided through A, a horizontal beam 24A having one end coupled to the support 21, and one end coupled to the support 21 having the same length as the beam 24A but in the opposite direction. 24B provided on the inner side and the other inner side in the vertical direction of the rectangular window provided at one lateral direction, for example, rightward from the center of gravity of the beam 24A. The movable electrode 23 in the horizontal direction whose ends are coupled to each other, and the insulating layer 1A formed on the upper surface of the silicon substrate 1 with a predetermined gap on the lower surface on one side of the beams 24A and 24B of the movable electrode 23, which is the left side in FIG. A fixed electrode 31 provided via the insulating layer 1A on the upper surface of the silicon substrate 1 on the opposite side, that is, the lower surface on the right side with a predetermined gap, and the movable electrode. 23
The terminal M, the fixed electrode 31 and the terminal S 1 and the fixed electrode 41, the terminal S and the terminal S 2 are drawn out from each other through the beam 24A (24B) and the support 21, respectively.
【0007】この半導体容量形加速度センサの動作は次
の通りである。可動電極23に垂直方向の加速度が加わ
ると、可動電極23の右側および左側の部分にそれぞれ
垂直方向の力を受けるが、左側の方が右側より重量が大
きいので、梁24A,24Bは支持体21に結合された
一方の端を支点として捩じれ可動電極23をQ矢印方向
に回動する。可動電極23の回動によって、この可動電
極23と固定電極31との間は、例えば接近してこの間
の静電容量は増大し、この可動電極23と固定電極41
との間は逆に離れてこの間の静電容量は減少する。これ
ら静電容量の値を端子M,S1 間および端子M,S2 間
から取り出し、差動増幅器などによって信号処理をして
加えられた加速度を検出する。The operation of this semiconductor capacitive acceleration sensor is as follows. When vertical acceleration is applied to the movable electrode 23, the right and left portions of the movable electrode 23 receive vertical forces respectively, but since the left side is heavier than the right side, the beams 24A and 24B are supported by the support 21. The movable electrode 23 is twisted with one end connected to the fulcrum as a fulcrum to rotate in the direction of arrow Q. Due to the rotation of the movable electrode 23, the movable electrode 23 and the fixed electrode 31 come close to each other, for example, and the electrostatic capacitance therebetween increases, so that the movable electrode 23 and the fixed electrode 41.
On the contrary, they are separated from each other and the capacitance between them decreases. The values of these capacitances are taken out from between the terminals M and S 1 and between the terminals M and S 2 , and signal processing is performed by a differential amplifier or the like to detect the applied acceleration.
【0008】図7は、同様多層マイクロマシン技術によ
って作られた従来の半導体容量形加速度センサの更に異
なる例を示す斜視図であり、半導体基板1と、それぞれ
ポリシリコンからなり、この半導体基板1の上面に絶縁
層1Aを介して設けられた支持体21Aおよび21B
と、その一端がそれぞれ支持体21Aおよび21Bに結
合され対抗した水平方向の梁24Aおよび24Bと、こ
れら梁24Aおよび24Bの他端間に結合された水平方
向の可動電極23と、この可動電極23の梁24Aおよ
び24Bより一方の側、図7では奥側の下面に所定の間
隙を隔ててシリコン基板1の上面に絶縁層1Aを介して
設けられた固定電極31と、この反対側、すなわち手前
側の下面に所定の間隙を隔ててシリコン基板1の上面に
絶縁層1Aを介して設けられた固定電極41とからな
り、可動電極23から梁24Aおよび支持体21Aを介
して端子Mが、固定電極31から端子S1 が、固定電極
41から端子S2 がそれぞれ引き出される。なお、25
は可動電極23の奥側に結合された重りである。FIG. 7 is a perspective view showing a further different example of the conventional semiconductor capacitive acceleration sensor manufactured by the same multi-layer micromachining technique. The semiconductor substrate 1 and the upper surface of the semiconductor substrate 1 are each made of polysilicon. 21A and 21B provided on the substrate via an insulating layer 1A
And horizontal beams 24A and 24B having one ends thereof coupled to and opposed to the supports 21A and 21B, a horizontal movable electrode 23 coupled between the other ends of the beams 24A and 24B, and the movable electrode 23. 7, one side of the beams 24A and 24B, the fixed electrode 31 provided on the upper surface of the silicon substrate 1 via the insulating layer 1A with a predetermined gap on the lower surface on the far side, and the opposite side, that is, the front side. The fixed electrode 41 is provided on the upper surface of the silicon substrate 1 via the insulating layer 1A with a predetermined gap on the lower surface on the side, and the terminal M is fixed from the movable electrode 23 via the beam 24A and the support 21A. The terminal S 1 is drawn from the electrode 31 and the terminal S 2 is drawn from the fixed electrode 41. 25
Is a weight coupled to the back side of the movable electrode 23.
【0009】この半導体容量形加速度センサの動作は次
の通りである。可動電極23に垂直方向の加速度が加わ
ると、可動電極23の奥側および手前側の部分にそれぞ
れ垂直方向の力を受けるが、奥側の方が手前側より重量
が大きいので、梁24A,24Bは支持体21A,21
Bに結合された一端を支点として捩じれ可動電極23を
R矢印方向に回動する。可動電極23の回動によって、
この可動電極23と固定電極31との間は、例えば接近
してこの間の静電容量は増大し、この可動電極23と固
定電極41との間は逆に離れてこの間の静電容量は減少
する。これら静電容量の値を端子M,S1 間および端子
M,S2 間から取り出し、差動増幅器などによって信号
処理をして加えられた加速度を検出する。The operation of this semiconductor capacitive acceleration sensor is as follows. When vertical acceleration is applied to the movable electrode 23, the back and front portions of the movable electrode 23 receive vertical forces, but since the back side is heavier than the front side, the beams 24A, 24B Is the support 21A, 21
The movable electrode 23 is twisted with one end coupled to B as a fulcrum to rotate in the R arrow direction. By the rotation of the movable electrode 23,
For example, the movable electrode 23 and the fixed electrode 31 are close to each other to increase the electrostatic capacity therebetween, and the movable electrode 23 and the fixed electrode 41 are conversely separated from each other to decrease the electrostatic capacity therebetween. . The values of these capacitances are taken out from between the terminals M and S 1 and between the terminals M and S 2 , and signal processing is performed by a differential amplifier or the like to detect the applied acceleration.
【0010】図8は、同様多層マイクロマシン技術によ
って作られた従来の半導体容量形加速度センサの更に異
なる例を示し、(a)は斜視図であり、(b)は(a)
のC−C断面図であり、半導体基板1と、それぞれポリ
シリコンからなり、この半導体基板1の上面に絶縁層1
Aを介して四角形の各隅に設けられた支持体21A,2
1B,21Cおよび21Dと、その一端がそれぞれ支持
体21A,21B,21Cおよび21Dに結合され90
°の回転移動で合致するこの四角形の対角線方向の梁2
4A,24B,24Cおよび24Dと、これら梁24
A,24B,24C,24Dの他端に結合された可動電
極23と、この可動電極23の下面に所定の間隔を隔て
てシリコン基板1の上面に絶縁層1Aを介して設けられ
た固定電極31と、シリコン基板1の上面に絶縁層1A
を介して設けられた支持体42Aおよび42Bと、これ
ら支持体42Aおよび42Bにその周辺が結合され、可
動電極23の一方の側、図8では左側の上面に所定の間
隙を隔てて設けられた固定電極41とからなり、可動電
極23から梁24Bおよび支持体21Bを介して端子M
が、固定電極31から端子S1 が、固定電極41から支
持体42Aを介して端子S2 がそれぞれ引き出される。FIGS. 8A and 8B show still another example of the conventional semiconductor capacitive acceleration sensor manufactured by the same multi-layer micromachine technology. FIG. 8A is a perspective view and FIG. 8B is a view.
2 is a cross-sectional view taken along line CC of FIG.
Supports 21A, 2 provided at respective corners of the quadrangle via A
1B, 21C and 21D and one ends thereof are respectively connected to the supports 21A, 21B, 21C and 21D.
The diagonal beam 2 of this quadrangle that is matched by a rotational movement of °
4A, 24B, 24C and 24D and these beams 24
A movable electrode 23 coupled to the other ends of A, 24B, 24C, and 24D, and a fixed electrode 31 provided on the lower surface of the movable electrode 23 on the upper surface of the silicon substrate 1 via an insulating layer 1A at a predetermined distance. And an insulating layer 1A on the upper surface of the silicon substrate 1.
The support members 42A and 42B provided via the support members 42A and 42B and the periphery thereof are coupled to the support members 42A and 42B, and are provided on one side of the movable electrode 23, that is, on the upper surface on the left side in FIG. The fixed electrode 41 and the terminal M from the movable electrode 23 via the beam 24B and the support 21B.
However, the terminal S 1 is drawn from the fixed electrode 31 and the terminal S 2 is drawn from the fixed electrode 41 through the support 42A.
【0011】この半導体容量形加速度センサの動作は次
の通りである。可動電極23に垂直方向の加速度が加わ
ると、可動電極23は垂直方向の力を受けて垂直方向に
移動する可動電極23の垂直移動によって、この可動電
極23と固定電極31との間は、例えば接近してこの間
の静電容量は増大し、この可動電極23と固定電極41
との間は逆に離れてこの間の静電容量は減少する。これ
ら静電容量の値を端子M,S1 間および端子M,S2 間
から取り出し、差動増幅器などによって信号処理をして
加えられた加速度を検出する。The operation of this semiconductor capacitive acceleration sensor is as follows. When a vertical acceleration is applied to the movable electrode 23, the movable electrode 23 receives a vertical force and moves in the vertical direction. By the vertical movement of the movable electrode 23, for example, between the movable electrode 23 and the fixed electrode 31, As they approach each other, the capacitance between them increases, and the movable electrode 23 and the fixed electrode 41 are
On the contrary, they are separated from each other and the capacitance between them decreases. The values of these capacitances are taken out from between the terminals M and S 1 and between the terminals M and S 2 , and signal processing is performed by a differential amplifier or the like to detect the applied acceleration.
【0012】[0012]
【発明が解決しようとする課題】図5ないし図7に示す
半導体容量形加速度センサでは、それぞれ加速度が加わ
ったとき、可動電極は固定電極に対して回動し、この可
動電極の回動によって生じる電極間隔の変化を静電容量
の変化として検出するものであるが、可動電極の回動量
と電極間隔の変化量は比例しないので検出出力が非線形
特性となる問題がある。一方、図8に示す半導体容量形
加速度センサでは加速度が加わったとき、可動電極は固
定電極に対して垂直に移動し、この可動電極の垂直移動
によって生じる電極間隔の変化を静電容量の変化として
検出するもので、可動電極の垂直移動量と電極間隔の変
化量は比例するので検出出力は線形特性となるが、可動
電極が4個の短かい梁で支持されているため可動電極の
垂直移動量が小さく検出感度が低い問題がある(このた
めに梁の長さをそのまま長くすると装置が大型化してし
まう)。また、図8に示す加速度センサでは相反に変化
する静電容量を発生する一方の固定電極(図8で31で
示す)と他方の固定電極(図8で41で示す)の面積が
異なるため、これらの静電容量の値(絶対値)が異なり
信号処理を行う、例えば差動増幅器の回路が複雑になり
コスト上昇の要因となる。In the semiconductor capacitive acceleration sensor shown in FIGS. 5 to 7, the movable electrode rotates with respect to the fixed electrode when acceleration is applied, and the movable electrode causes the rotation. Although the change of the electrode interval is detected as the change of the electrostatic capacity, there is a problem that the detection output has a non-linear characteristic because the amount of change of the movable electrode and the amount of change of the electrode interval are not proportional. On the other hand, in the semiconductor capacitive acceleration sensor shown in FIG. 8, when acceleration is applied, the movable electrode moves vertically with respect to the fixed electrode, and a change in the electrode interval caused by the vertical movement of the movable electrode is regarded as a change in capacitance. The detection output has a linear characteristic because the amount of vertical movement of the movable electrode is proportional to the amount of change in the electrode spacing. However, since the movable electrode is supported by four short beams, the vertical movement of the movable electrode is detected. There is a problem that the amount is small and the detection sensitivity is low (for this reason, if the length of the beam is lengthened as it is, the device becomes large). Further, in the acceleration sensor shown in FIG. 8, the area of one fixed electrode (denoted by 31 in FIG. 8) and the other fixed electrode (denoted by 41 in FIG. 8) that generate electrostatic capacitances that change reciprocally is different. These electrostatic capacitances have different values (absolute values) and perform signal processing, for example, the circuit of a differential amplifier becomes complicated, which causes a cost increase.
【0013】本発明の目的は小型で検出感度が高く、か
つ検出出力が線形特性の半導体容量形加速度センサを提
供することにある。更に、加速度を検出する静電容量が
相反して変化するものにおいて、この相反して変化する
静電容量を発生する一方および他方の固定電極の面積を
ほぼ等しく構成する。An object of the present invention is to provide a semiconductor capacitive acceleration sensor which is small in size, has high detection sensitivity, and has a detection output having a linear characteristic. Furthermore, in the case where the electrostatic capacitances for detecting the accelerations change in opposite directions, the areas of the one fixed electrode and the other fixed electrode that generate the oppositely changing electrostatic capacitances are made substantially equal.
【0014】[0014]
【課題を解決するための手段】前述の目的を達成するた
めに、本発明の半導体容量形加速度センサは、半導体基
板と、それぞれ導電性の半導体からなりこの半導体基板
の上面に絶縁層を介して正多角形の各隅に設けられた複
数個の支持体と、これら各支持体にその一端が結合され
それぞれ回転移動で合致するこの正多角形の辺方向の梁
と、これら梁に所定の間隙を隔てて設けられた正多角形
の可動電極と、この可動電極と前記各梁の他端とをそれ
ぞれ結合する連結体と、この可動電極の下面に所定の間
隙を隔てて前記半導体基板の上面に絶縁層を介して設け
られた固定電極とからなるようにする。または、半導体
基板と、それぞれ導電性の半導体からなりこの半導体基
板の上面に絶縁層を介して正多角形の各隅に設けられた
複数個の支持体と、これら各支持体にその一端が結合さ
れそれぞれ回転移動で合致するこの正多角形の辺方向の
梁と、これら梁に所定の間隙を隔てて設けられた正多角
形の可動電極と、この可動電極と前記各梁の他端とをそ
れぞれ結合する連結体と、この可動電極の下面に所定の
間隙を隔てて前記半導体基板の上面に絶縁層を介して設
けられた第1の固定電極と、半導体基板の上面に絶縁層
を介して設けられた複数個の支持体と、これら支持体に
その周辺が結合され前記可動電極の上面に所定の間隙を
隔てて設けられた第2の固定電極とからなるようにす
る。これら半導体容量形加速度センサにおいて可動電極
に金属膜を付着すれば、より好適である。In order to achieve the above-mentioned object, a semiconductor capacitive acceleration sensor of the present invention comprises a semiconductor substrate and a conductive semiconductor, respectively, and an insulating layer on the upper surface of the semiconductor substrate. A plurality of supports provided at each corner of the regular polygon, one end of each of the supports is connected to each other by a rotational movement, and a beam in the side direction of the regular polygon, and a predetermined gap between the beams. A regular polygonal movable electrode provided with a space between the movable electrode and the other end of each of the beams, and a top surface of the semiconductor substrate with a predetermined gap on the lower surface of the movable electrode. And a fixed electrode provided via an insulating layer. Alternatively, a semiconductor substrate, a plurality of supports each made of a conductive semiconductor and provided on the upper surface of the semiconductor substrate at each corner of a regular polygon through an insulating layer, and one end of each support is coupled to each support. The regular polygonal side beams that match each other by rotational movement, the regular polygonal movable electrodes provided at these beams with a predetermined gap, and the movable electrode and the other end of each beam are A coupling body to be coupled to each other, a first fixed electrode provided on the lower surface of the movable electrode at a predetermined gap on the upper surface of the semiconductor substrate via an insulating layer, and on the upper surface of the semiconductor substrate via an insulating layer. A plurality of supports provided and a second fixed electrode, the periphery of which is coupled to the supports and provided on the upper surface of the movable electrode with a predetermined gap therebetween, are provided. It is more preferable to attach a metal film to the movable electrode in these semiconductor capacitive acceleration sensors.
【0015】[0015]
【作用】本発明の半導体容量形加速度センサは、可動電
極が正多角形からなり、この正多角形の各辺に所定の間
隙を隔てて並行に配置された複数個の梁によってこの可
動電極を周囲から均等に支持するようにしたものであ
り、垂直に加速度が加わったとき、可動電極は固定電極
に対し垂直に移動する。そして、これら梁の他端をこれ
ら梁の一端が結合された支持体から遠い側の可動電極の
正多角形の端部に連結体を介し結合することにより、梁
の長さをこの正多角形の辺の長さに応じて長くすること
ができる。従って、小型で検出感度が高く、かつ検出出
力が線形特性の半導体容量形加速度センサとなる。In the semiconductor capacitive acceleration sensor according to the present invention, the movable electrode is formed of a regular polygon, and the movable electrode is formed by a plurality of beams arranged in parallel on each side of the regular polygon with a predetermined gap. The movable electrode is supported evenly from the surroundings, and when acceleration is applied vertically, the movable electrode moves vertically with respect to the fixed electrode. Then, by connecting the other end of these beams to the end of the regular polygon of the movable electrode on the side far from the support to which one end of these beams is coupled, via a connector, the length of the beam can be changed to the regular polygon. It can be made longer depending on the length of the side. Therefore, the semiconductor capacitive acceleration sensor is small in size, has high detection sensitivity, and has a linear detection output.
【0016】また、加速度を検出する静電容量が相反し
て変化するものにおいて、可動電極の下面に所定の間隙
を隔てて設けた一方の固定電極と、同様に可動電極の上
面全体に所定の間隙を隔てて他方の固定電極を設けるよ
うに構成したので、これら一方および他方の固定電極の
面積はほぼ等しくなる。また、これら半導体容量形加速
度センサで可動電極に重りを設けたので、加速度に対す
る可動電極の移動量が大きくなり検出感度がより向上す
る。Further, in the case where the electrostatic capacitance for detecting the acceleration changes reciprocally, one fixed electrode provided on the lower surface of the movable electrode with a predetermined gap therebetween, and similarly, a predetermined electrode on the entire upper surface of the movable electrode. Since the other fixed electrode is provided with a gap, the areas of the one fixed electrode and the other fixed electrode are substantially equal. Further, since the movable electrode is provided with the weight in these semiconductor capacitive acceleration sensors, the moving amount of the movable electrode with respect to the acceleration is increased, and the detection sensitivity is further improved.
【0017】[0017]
【実施例】図1は本発明の半導体容量形加速度センサの
一例を示し、(a)は平面図、(b)は(a)のA−A
断面図、(c)は(a)のB−B断面図であり、半導体
基板1と、それぞれポリシリコンからなり、この半導体
基板1の上面に絶縁層1Aを介して四角形の各隅に設け
られた支持体21A,21B,21Cおよび21Dと、
これら支持体21A,21B,21Cおよび21Dにそ
の一端が結合され、それぞれ90°の回転移動で合致す
るこの四角形の辺方向の梁26A,26B,26Cおよ
び26Dと、これら梁26A,26B,26Cおよび2
6Dと所定の間隙eを隔てて設けられた可動電極23
と、この可動電極23と梁26A,26B,26Cおよ
び26Dの他端とを連結する連結体27A,27B,2
7Cおよび27Dと、この可動電極23の下面に所定の
間隙を隔ててシリコン基板1の上面に絶縁層1Aを介し
て設けられた固定電極31とからなり、可動電極23か
ら連結体27A,梁26Aおよび支持体21Aを介して
端子Mが、固定電極31から端子S1 がそれぞれ引き出
される。FIG. 1 shows an example of a semiconductor capacitive acceleration sensor of the present invention, (a) is a plan view, (b) is AA of (a).
A cross-sectional view, (c) is a cross-sectional view taken along the line BB of (a), which is made of a semiconductor substrate 1 and polysilicon, respectively, and is provided on the upper surface of the semiconductor substrate 1 at each corner of a quadrangle via an insulating layer 1A. Supports 21A, 21B, 21C and 21D,
One end of each of these supports 21A, 21B, 21C and 21D is connected to each other, and the beams 26A, 26B, 26C and 26D in the direction of the sides of the quadrangle, which are matched by a rotational movement of 90 °, respectively, and the beams 26A, 26B, 26C and Two
6D and movable electrode 23 provided with a predetermined gap e
And connecting bodies 27A, 27B, 2 for connecting the movable electrode 23 and the other ends of the beams 26A, 26B, 26C and 26D.
7C and 27D and a fixed electrode 31 provided on the lower surface of the movable electrode 23 on the upper surface of the silicon substrate 1 via the insulating layer 1A with a predetermined gap between the movable electrode 23, the connecting body 27A and the beam 26A. The terminal M and the terminal S 1 are led out from the fixed electrode 31 and the support 21A, respectively.
【0018】この半導体容量形加速度センサの動作は次
の通りである。可動電極23に垂直方向の加速度が加わ
ると、可動電極23は垂直方向の力を受けて垂直方向に
移動する。可動電極23の垂直移動によってこの可動電
極23との間は、例えば接近してこの間の静電容量は増
大し、この静電容量の値を端子M,S1 間から取り出
し、増幅器などによって信号処理をして加えられた加速
度を検出する。The operation of this semiconductor capacitive acceleration sensor is as follows. When vertical acceleration is applied to the movable electrode 23, the movable electrode 23 receives a vertical force and moves in the vertical direction. Due to the vertical movement of the movable electrode 23, for example, the movable electrode 23 approaches the movable electrode 23 and the electrostatic capacitance therebetween increases, and the value of this electrostatic capacitance is taken out from between the terminals M and S 1 and signal processing is performed by an amplifier or the like. To detect the applied acceleration.
【0019】この半導体容量形加速度センサは、可動電
極23が四角形からなり、この四角形の各辺に所定の間
隙eを隔てて並列に配置された梁26A,26B,26
Cおよひ26Dによって可動電極23を周囲から均等に
支持するようにしたものであり、垂直に加速度が加わっ
たとき、可動電極23は固定電極31に対し垂直に移動
する。そしてこれらの梁の他端を、これら梁の一端が結
合された支持体から遠い側の可動電極23の正多角形の
端部に連結体を介し結合することにより(図1に示す状
態)、梁の長さをこの正多角形の辺の長さに応じて長く
することができる。従って、小型で検出感度が高く、か
つ検出出力が線形特性の半導体容量形加速度センサとな
る。In this semiconductor capacitive acceleration sensor, the movable electrode 23 is formed of a quadrangle, and beams 26A, 26B, 26 are arranged in parallel on each side of the quadrangle with a predetermined gap e therebetween.
The movable electrode 23 is evenly supported from the surroundings by C and 26D, and the movable electrode 23 moves vertically with respect to the fixed electrode 31 when vertical acceleration is applied. Then, the other ends of these beams are connected to the end portion of the regular polygon of the movable electrode 23 on the side far from the support to which one ends of these beams are connected via the connecting member (state shown in FIG. 1). The length of the beam can be increased according to the length of the side of this regular polygon. Therefore, the semiconductor capacitive acceleration sensor is small in size, has high detection sensitivity, and has a linear detection output.
【0020】図2は本発明の半導体容量形加速度センサ
の異なる例を示し、(a)は平面図、(b)は(a)の
A−A断面図、(c)は(a)のB−B断面図である。
図2は、図1において更に、シリコン基板1の上面に絶
縁層1Aを介して設けられた支持体42A,42B,4
2Cおよび42Dと、これら支持体42A,42B,4
2Cおよび42Dにその周囲が結合され、可動電極23
の上面に所定の間隙を隔てて設けられた固定電極41と
を設け、この固定電極41から支持体42Cを介して端
子S2 を引き出したものである。2A and 2B show different examples of the semiconductor capacitive acceleration sensor according to the present invention. FIG. 2A is a plan view, FIG. 2B is a sectional view taken along the line AA of FIG. It is a -B sectional view.
FIG. 2 further shows the supports 42A, 42B, 4 provided on the upper surface of the silicon substrate 1 via the insulating layer 1A in FIG.
2C and 42D and these supports 42A, 42B, 4
2C and 42D having their perimeters coupled to the movable electrode 23
The fixed electrode 41 is provided on the upper surface of the fixed electrode 41 with a predetermined gap, and the terminal S 2 is drawn from the fixed electrode 41 through the support 42C.
【0021】この半導体容量形加速度センサの動作は次
の通りである。可動電極23に垂直方向の加速度が加わ
ると、この可動電極23と固定電極31との間は、例え
ば接近してこの間の静電容量は増大し、この可動電極2
3と固定電極41との間は逆に離れてこの間の静電容量
は減少する。これら静電容量の値を端子M,S1 間およ
び端子M,S2 間から取り出し、差動増幅器などによっ
て信号処理をして加えられた加速度を検出する。The operation of this semiconductor capacitive acceleration sensor is as follows. When vertical acceleration is applied to the movable electrode 23, the movable electrode 23 and the fixed electrode 31 approach each other, for example, and the electrostatic capacitance therebetween increases, and the movable electrode 2
3 and the fixed electrode 41 are separated from each other, and the capacitance therebetween decreases. The values of these capacitances are taken out from between the terminals M and S 1 and between the terminals M and S 2 , and signal processing is performed by a differential amplifier or the like to detect the applied acceleration.
【0022】この半導体容量形加速度センサでは、可動
電極23と固定電極31との間および可動電極23と固
定電極41との間の相反して変化する静電容量を検出す
るのでより検出感度が向上する。また、固定電極41を
可動電極の上面全体に設けるようにしたので、これら固
定電極31および41の面積をほぼ等しく構成でき、こ
れら固定電極31,41と可動電極23との間の各静電
容量の値(絶対値)はほぼ等しくなり、信号処理を行
う、例えば差動増幅器の回路が簡単化され低コストとな
る。In this semiconductor capacitance type acceleration sensor, since the electrostatic capacitances that change reciprocally between the movable electrode 23 and the fixed electrode 31 and between the movable electrode 23 and the fixed electrode 41 are detected, the detection sensitivity is further improved. To do. Further, since the fixed electrode 41 is provided on the entire upper surface of the movable electrode, the areas of the fixed electrodes 31 and 41 can be made substantially equal, and the electrostatic capacitances between the fixed electrodes 31 and 41 and the movable electrode 23 can be made. The values (absolute values) of are substantially equal, and the circuit for signal processing, for example, a differential amplifier is simplified and the cost is reduced.
【0023】図3および図4はそれぞれ本発明の更に異
なる実施例を示し、(a)はそれぞれ平面図、(b)は
それぞれ(a)のA−A断面図、(c)はそれぞれ
(a)のB−B断面図である。これら実施例は、それぞ
れ図1あるいは図2において可動電極23に金属膜29
を付着したものである。この金属膜29によって可動電
極23の重量が増加するので、加速度の検出感度がより
向上する。なお、金属は比重が大きいので、可動電極の
部分がこの金属膜29によって大型化することは殆んど
ないが、勿論この金属膜29の厚さ分可動電極23と固
定電極41との間の間隙を補正する。3 and 4 show further different embodiments of the present invention. (A) is a plan view, (b) is a sectional view taken along line AA of (a), and (c) is (a). ) Is a B-B cross-sectional view. In these examples, the metal film 29 is formed on the movable electrode 23 in FIG. 1 or FIG.
Is attached. Since the weight of the movable electrode 23 is increased by the metal film 29, the acceleration detection sensitivity is further improved. Since the metal has a large specific gravity, the size of the movable electrode is hardly increased by the metal film 29. However, the thickness between the movable electrode 23 and the fixed electrode 41 is of course the thickness of the metal film 29. Correct the gap.
【0024】[0024]
【発明の効果】本発明の半導体容量形加速度センサは、
小型で検出感度が高く、かつ検出出力が線形特性である
ので、自動車用をはじめ各種用途に好適である。更に加
速度を検出する静電容量が相反して変化するものにおい
て、この相反して変化する静電容量の値(絶対値)が等
しいので、信号処理を行う、例えば差動増幅器の回路が
簡単化されコストが低下する。The semiconductor capacitive acceleration sensor of the present invention is
Since it is small and has high detection sensitivity and the detection output has a linear characteristic, it is suitable for various applications including automobiles. Furthermore, in the case where the electrostatic capacitances that detect acceleration change reciprocally, the values (absolute value) of the reciprocally changing capacitances are equal, so signal processing is performed, for example, the circuit of a differential amplifier is simplified. The cost is reduced.
【0025】[0025]
【0026】[0026]
【図1】本発明の半導体容量形加速度センサの一実施例
を示し、(a)は平面図、(b)は(a)のA−A断面
図、(c)は(a)のB−B断面図FIG. 1 shows an embodiment of a semiconductor capacitive acceleration sensor of the present invention, (a) is a plan view, (b) is a sectional view taken along line AA of (a), and (c) is B- of (a). B cross section
【0027】[0027]
【図2】本発明の半導体容量形加速度センサの異なる実
施例を示し、(a)は平面図、(b)は(a)のA−A
断面図、(c)は(a)のB−B断面図2A and 2B show different embodiments of the semiconductor capacitive acceleration sensor of the present invention, FIG. 2A is a plan view, and FIG.
Sectional view, (c) is a sectional view taken along line BB of (a)
【0028】[0028]
【図3】本発明の半導体容量形加速度センサの更に異な
る実施例を示し、(a)は平面図、(b)は(a)のA
−A断面図、(c)は(a)のB−B断面図3A and 3B show still another embodiment of the semiconductor capacitive acceleration sensor of the present invention, in which FIG. 3A is a plan view and FIG. 3B is A in FIG.
-A sectional view, (c) is a BB sectional view of (a).
【0029】[0029]
【図4】本発明の半導体容量形加速度センサの更に異な
る実施例を示し、(a)は平面図、(b)は(a)のA
−A断面図、(c)は(a)のB−B断面図4A and 4B show still another embodiment of the semiconductor capacitive acceleration sensor according to the present invention, FIG. 4A is a plan view, and FIG.
-A sectional view, (c) is a BB sectional view of (a).
【0030】[0030]
【図5】従来の半導体容量形加速度センサの一例を示す
斜視図FIG. 5 is a perspective view showing an example of a conventional semiconductor capacitive acceleration sensor.
【0031】[0031]
【図6】従来の半導体容量形加速度センサの異なる例を
示す斜視図FIG. 6 is a perspective view showing a different example of a conventional semiconductor capacitive acceleration sensor.
【0032】[0032]
【図7】従来の半導体容量形加速度センサの更に異なる
例を示す斜視図FIG. 7 is a perspective view showing still another example of the conventional semiconductor capacitive acceleration sensor.
【0033】[0033]
【図8】従来の半導体容量形加速度センサの更に異なる
例を示し、(a)は斜視図、(b)は(a)のC−C断
面図8A and 8B show still another example of a conventional semiconductor capacitive acceleration sensor, in which FIG. 8A is a perspective view and FIG. 8B is a sectional view taken along line CC of FIG.
【0034】[0034]
1 半導体基板 1A 絶縁層 21A 支持体 21B 支持体 21C 支持体 21D 支持体 23 可動電極 26A 梁 26B 梁 26C 梁 26D 梁 27A 連結体 27B 連結体 27C 連結体 27D 連結体 29 金属膜 31 固定電極 41 固定電極 42A 支持体 42B 支持体 42C 支持体 42D 支持体 1 Semiconductor Substrate 1A Insulating Layer 21A Support 21B Support 21C Support 21D Support 23 Movable Electrode 26A Beam 26B Beam 26C Beam 26D Beam 27A Connect 27B Connect 27C Connect 27D Connect 29 Metal Film 31 Fixed Electrode 41 42A support 42B support 42C support 42D support
Claims (3)
らなりこの半導体基板の上面に絶縁層を介して正多角形
の各隅に設けられた複数個の支持体と、これら各支持体
にその一端が結合されそれぞれ回転移動で合致するこの
正多角形の辺方向の梁と、これら梁に所定の間隙を隔て
て設けられた正多角形の可動電極と、この可動電極と前
記各梁の他端とをそれぞれ結合する連結体と、この可動
電極の下面に所定の間隙を隔てて前記半導体基板の上面
に絶縁層を介して設けられた固定電極とからなることを
特徴とする半導体容量形加速度センサ。1. A semiconductor substrate, a plurality of supports each made of a conductive semiconductor and provided on the upper surface of the semiconductor substrate at each corner of a regular polygon through an insulating layer, and each of these supports. This regular polygonal side-to-side beam, which is connected at one end and is matched by rotational movement, a regular polygonal movable electrode provided at these beams with a predetermined gap, and this movable electrode and the other beams described above. A semiconductor capacitive acceleration characterized by comprising a connecting body for connecting the respective ends to each other, and a fixed electrode provided on the lower surface of the movable electrode on the upper surface of the semiconductor substrate via an insulating layer with a predetermined gap therebetween. Sensor.
らなりこの半導体基板の上面に絶縁層を介して正多角形
の各隅に設けられた複数個の支持体と、これら各支持体
にその一端が結合されそれぞれ回転移動で合致するこの
正多角形の辺方向の梁と、これら梁に所定の間隙を隔て
て設けられた正多角形の可動電極と、この可動電極と前
記各梁の他端とをそれぞれ結合する連結体と、この可動
電極の下面に所定の間隙を隔てて前記半導体基板の上面
に絶縁層を介して設けられた第1の固定電極と、半導体
基板の上面に絶縁層を介して設けられた複数個の支持体
と、これら支持体にその周辺が結合され前記可動電極の
上面に所定の間隙を隔てて設けられた第2の固定電極と
からなることを特徴とする半導体容量形加速度センサ。2. A semiconductor substrate, a plurality of supports each made of a conductive semiconductor and provided on the upper surface of the semiconductor substrate at each corner of a regular polygon through an insulating layer, and each of these supports. This regular polygonal side-to-side beam, which is connected at one end and is matched by rotational movement, a regular polygonal movable electrode provided at these beams with a predetermined gap, and this movable electrode and the other beams described above. A connecting body that connects the ends to each other, a first fixed electrode provided on the lower surface of the movable electrode on the upper surface of the semiconductor substrate with an insulating layer interposed therebetween, and an insulating layer on the upper surface of the semiconductor substrate. It is characterized by comprising a plurality of supports provided via the above, and a second fixed electrode whose periphery is coupled to these supports and which is provided on the upper surface of the movable electrode with a predetermined gap. Semiconductor capacitive acceleration sensor.
金属膜を付着したことを特徴とする半導体容量形加速度
センサ。3. The semiconductor capacitive acceleration sensor according to claim 1, wherein a metal film is attached to the movable electrode.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18582893A JP3156453B2 (en) | 1993-07-28 | 1993-07-28 | Semiconductor capacitive acceleration sensor |
GB9414661A GB2281126B (en) | 1993-07-28 | 1994-07-20 | Semiconductor capacitive acceleration sensor |
US08/281,100 US5665915A (en) | 1992-03-25 | 1994-07-27 | Semiconductor capacitive acceleration sensor |
DE4426590A DE4426590C2 (en) | 1993-07-28 | 1994-07-27 | Capacitive semiconductor acceleration sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18582893A JP3156453B2 (en) | 1993-07-28 | 1993-07-28 | Semiconductor capacitive acceleration sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0743380A true JPH0743380A (en) | 1995-02-14 |
JP3156453B2 JP3156453B2 (en) | 2001-04-16 |
Family
ID=16177589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18582893A Expired - Lifetime JP3156453B2 (en) | 1992-03-25 | 1993-07-28 | Semiconductor capacitive acceleration sensor |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3156453B2 (en) |
DE (1) | DE4426590C2 (en) |
GB (1) | GB2281126B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08122359A (en) * | 1994-10-21 | 1996-05-17 | Fuji Electric Co Ltd | Semiconductor acceleration sensor and its manufacture and testing method |
DE19530736B4 (en) * | 1995-02-10 | 2007-02-08 | Robert Bosch Gmbh | Acceleration sensor and method for manufacturing an acceleration sensor |
FR2734057B1 (en) * | 1995-05-11 | 1997-06-20 | Suisse Electronique Microtech | MINIATURE CAPACITIVE ACCELEROMETRIC SENSOR |
DE19632060B4 (en) * | 1996-08-09 | 2012-05-03 | Robert Bosch Gmbh | Method for producing a rotation rate sensor |
DE19709520B4 (en) * | 1997-03-10 | 2007-05-31 | GEMAC-Gesellschaft für Mikroelektronikanwendung Chemnitz mbH | Capacitive accelerometer element |
DE19961299B4 (en) * | 1999-12-18 | 2009-04-30 | Robert Bosch Gmbh | Sensor for detecting knocking in an internal combustion engine |
CN101271124B (en) * | 2008-05-16 | 2010-09-29 | 中国科学院上海微***与信息技术研究所 | L-beam piezoresistance type micro-accelerometer and production method thereof |
CN113495640B (en) * | 2020-04-01 | 2024-06-11 | 万达光电科技股份有限公司 | Touch sensor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4553436A (en) * | 1982-11-09 | 1985-11-19 | Texas Instruments Incorporated | Silicon accelerometer |
DE3429250C1 (en) * | 1984-08-08 | 1986-03-27 | Texas Instruments Deutschland Gmbh, 8050 Freising | Sensor responsive to the action of a force |
US4732647A (en) * | 1984-10-24 | 1988-03-22 | Aine Harry E | Batch method of making miniature capacitive force transducers assembled in wafer form |
US4893509A (en) * | 1988-12-27 | 1990-01-16 | General Motors Corporation | Method and product for fabricating a resonant-bridge microaccelerometer |
DD282530A5 (en) * | 1989-04-24 | 1990-09-12 | Karl Marx Stadt Tech Hochschul | CAPACITIVE MICROMECHANICAL ACCELERATION SENSOR |
DE3922476A1 (en) * | 1989-07-06 | 1991-01-17 | Siemens Ag | CAPACITIVE MICROMECHANICAL ACCELERATION SENSOR |
DE4022464C2 (en) * | 1990-07-14 | 2000-12-28 | Bosch Gmbh Robert | Acceleration sensor |
DE69206770T2 (en) * | 1991-12-19 | 1996-07-11 | Motorola Inc | Triaxial accelerometer |
-
1993
- 1993-07-28 JP JP18582893A patent/JP3156453B2/en not_active Expired - Lifetime
-
1994
- 1994-07-20 GB GB9414661A patent/GB2281126B/en not_active Expired - Fee Related
- 1994-07-27 DE DE4426590A patent/DE4426590C2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3156453B2 (en) | 2001-04-16 |
GB2281126A (en) | 1995-02-22 |
GB9414661D0 (en) | 1994-09-07 |
GB2281126B (en) | 1996-09-18 |
DE4426590C2 (en) | 1999-12-09 |
DE4426590A1 (en) | 1995-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5665915A (en) | Semiconductor capacitive acceleration sensor | |
JP3327595B2 (en) | 3-axis accelerometer | |
US6928872B2 (en) | Integrated gyroscope of semiconductor material with at least one sensitive axis in the sensor plane | |
EP2246706B1 (en) | Physical quantity sensor | |
JP5474946B2 (en) | Capacitive sensor with stress relief to compensate package stress | |
US7302847B2 (en) | Physical quantity sensor having movable portion | |
JPH10239347A (en) | Motion sensor | |
JP2012225920A (en) | Micro-electromechanical system (mems) device | |
JP4000936B2 (en) | Detection apparatus having a capacitive mechanical quantity sensor | |
CN1278922C (en) | Fork type micromechanical gyro and its manufacturing method | |
JP6897771B2 (en) | Corner coupled resonator array | |
JPH0743380A (en) | Semiconductor capacitive acceleration sensor | |
KR100513345B1 (en) | a capacitance z-axis accelerometer | |
JP5352865B2 (en) | Acceleration sensor | |
JP2000019198A (en) | Acceleration sensor | |
JP2001004658A (en) | Dual-shaft semiconductor acceleration sensor and manufacture thereof | |
JP2001349732A (en) | Micro-machine device, angular acceleration sensor, and acceleration sensor | |
TW200422623A (en) | Z-axis solid state gyroscope and three-axis inertial measurement apparatus | |
JP5034043B2 (en) | Acceleration sensor and acceleration detection device | |
JP2001349731A (en) | Micro-machine device, angular acceleration sensor, and acceleration sensor | |
JPH11160348A (en) | Semiconductor accelerometer | |
JPH07245413A (en) | Acceleration sensor | |
JPH05203449A (en) | Gyroscope apparatus | |
JPH06167400A (en) | Mechanical quantity sensor | |
JP3493477B2 (en) | Differential capacitive acceleration detector |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080209 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090209 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090209 Year of fee payment: 8 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090209 Year of fee payment: 8 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100209 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100209 Year of fee payment: 9 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100209 Year of fee payment: 9 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110209 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110209 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120209 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120209 Year of fee payment: 11 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120209 Year of fee payment: 11 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130209 Year of fee payment: 12 |
|
EXPY | Cancellation because of completion of term |