JPH07335791A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH07335791A JPH07335791A JP15421394A JP15421394A JPH07335791A JP H07335791 A JPH07335791 A JP H07335791A JP 15421394 A JP15421394 A JP 15421394A JP 15421394 A JP15421394 A JP 15421394A JP H07335791 A JPH07335791 A JP H07335791A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- substrate
- resin composition
- semiconductor device
- driving circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、感熱記録ヘッド装置等
の基板上に搭載された半導体素子エポキシ樹脂組成物の
硬化物で封止してなる半導体装置に関し、更に詳述する
とエポキシ樹脂封止材で封止された場合の基板のそりが
可及的に防止された半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device which is mounted on a substrate of a thermal recording head device or the like and is sealed with a cured product of a semiconductor element epoxy resin composition. The present invention relates to a semiconductor device in which warpage of a substrate when sealed with a material is prevented as much as possible.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】近年、
ＭＣＭ、ＢＧＡに代表されるような大型の半導体装置が
開発されている。これらの装置の基板は、銅、ガラスエ
ポキシ積層板、ＢＴレジン、セラミックスあるいはポリ
イミドフィルム等により構成されているが、装置の大型
化に伴い樹脂組成物による封止面積がより広域化する傾
向にある。また、封止方法も変化し、装置の薄型化を目
的として片面のみを封止する方法が採用されるようにな
ってきた。2. Description of the Related Art In recent years,
Large semiconductor devices such as MCM and BGA have been developed. The substrate of these devices is made of copper, glass epoxy laminated plate, BT resin, ceramics, polyimide film, or the like, but the sealing area of the resin composition tends to become wider as the device becomes larger. . Also, the sealing method has changed, and a method of sealing only one side has been adopted for the purpose of making the device thinner.
【０００３】ところで、このような装置を封止する場合
にエポキシ樹脂封止材のような熱硬化性の樹脂組成物が
用いられるが、従来のエポキシ樹脂封止材を用いて上述
した大面積の封止を行うと基板にそりが発生し、半導体
装置の信頼性が損なわれ、しかも装置の装着が不可能に
なるという問題が生じる場合がある。By the way, a thermosetting resin composition such as an epoxy resin encapsulant is used for encapsulating such a device. When the sealing is performed, warpage may occur in the substrate, the reliability of the semiconductor device may be deteriorated, and the device may not be mounted.
【０００４】とりわけ、感熱記録ヘッド（以下、ＴＰＨ
装置と称す）では基板のそりの問題が大きい。In particular, a thermal recording head (hereinafter referred to as TPH
The so-called device) has a large problem of substrate warpage.
【０００５】即ち、感熱式ファクシミリ等に用いられる
感熱記録ヘッドは、一般に発熱素子回路を有する発熱基
板と駆動用回路を有する樹脂製の駆動用回路基板とをそ
れらの端部において接合し、該発熱基板面又は駆動用回
路基板面のそれらの接合端部に近接して駆動用集積回路
（ＩＣ）を装着し、この集積回路と上記発熱素子回路及
び駆動用回路とをボンディングワイヤー等の配線部を介
してそれぞれ導通したものであり、この場合、ＩＣの実
装方法としては、フリップチップボンディング法又はワ
イヤーボンディング法が一般に知られている。That is, in a thermal recording head used in a thermal facsimile, a heat generating substrate having a heat generating element circuit and a resin drive circuit board having a drive circuit are generally joined at their ends to generate heat. A driving integrated circuit (IC) is mounted in the vicinity of the joint end portion of the substrate surface or the driving circuit substrate surface, and a wiring portion such as a bonding wire is provided between the integrated circuit and the heating element circuit and the driving circuit. In this case, a flip chip bonding method or a wire bonding method is generally known as an IC mounting method.
【０００６】これらのボンディング後に、発熱基板、駆
動用回路基板の配線材露出面と駆動用ＩＣのボンディン
グ部分に湿気や導電性異物が侵入するのを防止するため
に、従来、シリコーン系の樹脂で保護封止をすることが
行われている。更に、このシリコーン系封止部の機械的
保護及びプラテンローラにより排出される記録紙のガイ
ドを目的にヘッドカバーをシリコーン系封止部を覆って
取り付けるのが一般的である。特に、ワイヤーボンディ
ング法における実装方法は、シリコーン系の樹脂で保護
封止した後でもボンディングワイヤーの機械的強度が極
度に弱いので、製造工程中の取扱を容易にするためにも
ヘッドカバーを付けるか、あるいはヘッドカバーの機能
を持つ治具が必要となる。また、フリップチップボンデ
ィング法においても、シリコーン系等の樹脂で保護封止
した後、駆動用ＩＣの素子自体を機械的に保護するため
にもヘッドカバーが必要となる。After these bonding, in order to prevent moisture and conductive foreign substances from entering the heat generating substrate, the exposed surface of the wiring material of the driving circuit board and the bonding portion of the driving IC, conventionally, a silicone resin is used. Protective sealing is performed. Further, a head cover is generally attached to cover the silicone-based sealing portion for the purpose of mechanical protection of the silicone-based sealing portion and guide of the recording paper discharged by the platen roller. In particular, in the mounting method in the wire bonding method, since the mechanical strength of the bonding wire is extremely weak even after protective sealing with a silicone-based resin, a head cover is attached to facilitate handling during the manufacturing process. Alternatively, a jig having a head cover function is required. Also in the flip chip bonding method, the head cover is also required to mechanically protect the element of the driving IC itself after it is protectively sealed with a resin such as silicone.
【０００７】即ち、従来は、このような駆動用ＩＣの保
護封止に用いられる樹脂は上述したようにシリコーン系
の樹脂が主流であり、このシリコーン系樹脂は耐環境性
及び電気的絶縁は十分であるものの、機械的保護の機能
は十分ではなく、このため保護封止部にヘッドカバーを
付けなければならないので、作業工数が多く、しかも材
料費が高いという問題がある。That is, conventionally, as the resin used for the protective sealing of such a driving IC, the silicone type resin is mainly used as described above, and the silicone type resin has sufficient environment resistance and electrical insulation. However, the mechanical protection function is not sufficient, and therefore the head cover must be attached to the protective sealing portion, so there is a problem that the number of working steps is large and the material cost is high.
【０００８】そのため、駆動用ＩＣ、ボンディングワイ
ヤーの機械的保護の機能をヘッドカバーではなく封止樹
脂そのものに持たせるため、これまで一般的に使用され
てきたシリコーン系の樹脂に代わり、硬度が大きなエポ
キシ樹脂組成物により封止する方法が開発されてきてい
る。Therefore, in order for the sealing resin itself to have the function of mechanically protecting the driving IC and the bonding wire, not the head cover, an epoxy resin having a large hardness is used instead of the generally used silicone resin. A method of sealing with a resin composition has been developed.
【０００９】ところが、エポキシ樹脂組成物を用いる
と、樹脂封止後に、特にガラスエポキシ積層板で構成さ
れる駆動用回路基板にそりが生じ、このそりによりＴＰ
Ｈ装置の信頼性が損なわれ、そり幅が大きな場合は、印
字が不可能になるという問題が発生している。However, when the epoxy resin composition is used, after the resin is sealed, a warp is generated particularly on the drive circuit board composed of the glass epoxy laminate, and this warp causes TP.
When the reliability of the H device is impaired and the warp width is large, there is a problem that printing is impossible.
【００１０】このようなそりの発生の原因として基板と
封止樹脂との線膨張係数の差による硬化収縮率の違いが
指摘されており、その対策として従来充填剤を高配合す
ることで両者の線膨張係数を同等にする方法が採用され
ている。It has been pointed out that the difference in curing shrinkage due to the difference in linear expansion coefficient between the substrate and the encapsulating resin is a cause of such warpage, and as a countermeasure against this, a high filler content has been used in the past to enhance both. A method of making the coefficients of linear expansion equal is adopted.
【００１１】しかしながら、このように基板と封止樹脂
との線膨張係数をたとえ同等にしたとしても、両者の収
縮の傾向が異なり、このためにそり量の低減は困難であ
る上、充填剤を多量に配合する結果、封止用樹脂組成物
が高粘度化して流動性が低下し、作業性が低下すると共
に、充填性が悪くなるという問題もある。この場合、作
業性を向上させるために溶剤を用いて低粘度化する方法
もあるが、硬化後に完全に溶剤が抜けきらず、半導体装
置の信頼性を損なうおそれがある。However, even if the linear expansion coefficient of the substrate and that of the sealing resin are made equal to each other in this way, the tendency of contraction between the two is different, which makes it difficult to reduce the amount of warpage and to add a filler. As a result of blending in a large amount, there are problems that the encapsulating resin composition has a high viscosity and fluidity is lowered, workability is lowered, and filling property is deteriorated. In this case, there is also a method of lowering the viscosity by using a solvent in order to improve workability, but the solvent may not be completely removed after curing, which may impair the reliability of the semiconductor device.
【００１２】また、ＴＰＨ装置のように線膨張係数の異
なる基板間を樹脂封止する場合には、上記のような充填
剤の高配合による線膨張係数の一致を計る方法でそりを
防止することは困難である。Further, in the case of resin-sealing between substrates having different linear expansion coefficients as in a TPH device, warpage should be prevented by the method of measuring the coefficient of linear expansion matching by the high content of the filler as described above. It is difficult.
【００１３】本発明は、上記事情に鑑みなされたもの
で、樹脂製の基板上に搭載される半導体素子をエポキシ
樹脂組成物の硬化物で封止するに際し、充填剤などを多
量に配合して線膨張係数を基板と合わせなくとも基板の
そりの発生が可及的に防止された半導体装置を提供する
ことを目的とする。The present invention has been made in view of the above circumstances, and when a semiconductor element mounted on a resin substrate is sealed with a cured product of an epoxy resin composition, a large amount of a filler or the like is added. An object of the present invention is to provide a semiconductor device in which warpage of a substrate is prevented as much as possible without matching the linear expansion coefficient with that of the substrate.
【００１４】[0014]
【課題を解決するための手段及び作用】本発明者らは、
上記目的を達成するため鋭意検討を重ね、エポキシ樹脂
（封止樹脂）及び基板の硬化収縮の傾向を詳しく分析し
た結果、ガラスエポキシ樹脂等の基板に搭載された半導
体素子をエポキシ樹脂封止材で封止する際、基板及び封
止樹脂が高温から冷却されるとき、基板のガラス転移温
度（Ｔｇ）からこれよりも約３０℃低い温度領域までは
大きな収縮が生じる一方、この温度より低い温度領域で
はほぼ一定の小さな収縮が生じることを見い出すと共
に、封止に使用されるエポキシ樹脂組成物の大きな収縮
が生じる温度領域におけるショアＤ硬度を低くすること
で基板のそりの発生を防止できることを知見した。Means and Actions for Solving the Problems The present inventors have
In order to achieve the above objectives, we have made extensive studies and analyzed the curing shrinkage tendency of the epoxy resin (sealing resin) and the substrate in detail. As a result, the semiconductor element mounted on the substrate such as glass epoxy resin was sealed with the epoxy resin sealing material. When the substrate and the sealing resin are cooled from a high temperature during sealing, a large shrinkage occurs from the glass transition temperature (Tg) of the substrate to a temperature region lower by about 30 ° C. than that, while a temperature region lower than this temperature. Then, it was found that a substantially constant small shrinkage occurred, and it was found that the warp of the substrate can be prevented by lowering the Shore D hardness in the temperature region where a large shrinkage of the epoxy resin composition used for sealing occurs. .
【００１５】即ち、基板の収縮が大きな温度範囲内にお
いて樹脂の硬度を一定の値に低く抑えること、具体的に
は、エポキシ樹脂組成物から無機質充填剤を除いたもの
の１．５ｍｍ以上の厚さの硬化物のショアＤ硬度が上記
基板のガラス転移温度より３０℃±５℃低い温度におい
て６０以下であり、かつ２５℃において２５以上である
エポキシ樹脂組成物を使用して封止を行うことで、封止
樹脂と基板間に生じる応力を低減させることができ、こ
れによって充填剤を多量に配合して線膨張係数を基板と
同等とすることなく基板に発生するそりを可及的に防止
できること、充填剤を多量に配合する必要がないので作
業性が良好であると共に、充填性が良好であることを見
い出した。That is, the hardness of the resin is kept low to a constant value in a temperature range where the shrinkage of the substrate is large. Specifically, the epoxy resin composition excluding the inorganic filler has a thickness of 1.5 mm or more. By using an epoxy resin composition having a Shore D hardness of 60 or less at a temperature of 30 ° C. ± 5 ° C. lower than the glass transition temperature of the above substrate and 25 or more at 25 ° C., sealing is performed. , It is possible to reduce the stress generated between the sealing resin and the substrate, and by this, it is possible to prevent warpage that occurs in the substrate as much as possible by blending a large amount of filler without making the linear expansion coefficient equal to that of the substrate. It has been found that the workability is good and the filling property is good because it is not necessary to mix a large amount of the filler.
【００１６】特に、線膨張係数の異なる２種の基板を有
するＴＰＨ装置の場合、線膨張係数の大きい基板のガラ
ス転移温度より３０℃±５℃低い温度において上記硬化
物のショアＤ硬度が６０以下のもので封止すれば、基板
の収縮が妨げずらくなり、また両者間で応力が発生しず
らくなり、結果としてそりを防止できることを知見し、
本発明をなすに至ったものである。In particular, in the case of a TPH device having two types of substrates having different linear expansion coefficients, the Shore D hardness of the above-mentioned cured product is 60 or less at a temperature 30 ° C. ± 5 ° C. lower than the glass transition temperature of the substrate having a large linear expansion coefficient. It was found that if it is sealed with a material, the contraction of the substrate is difficult to prevent, and stress is less likely to occur between the two, and as a result, warpage can be prevented.
The present invention has been completed.
【００１７】従って、本発明は、（１）ガラスエポキシ
樹脂積層板等の基板上に搭載されたＩＣをエポキシ樹脂
組成物の硬化物にて封止してなる半導体装置において、
上記エポキシ樹脂組成物として、当該エポキシ樹脂組成
物から無機質充填剤を除いたものの１．５ｍｍ以上の厚
さの硬化物のショアＤ硬度が上記基板のガラス転移温度
より３０℃±５℃低い温度において６０以下であり、か
つ２５℃において２５以上であるエポキシ樹脂組成物を
使用したことを特徴とする半導体装置、及び、（２）発
熱素子回路を有する発熱基板と駆動用回路を有する樹脂
製駆動用回路基板とを具備し、該発熱基板又は駆動用回
路基板上に駆動用ＩＣを装着すると共に、この駆動用Ｉ
Ｃと上記発熱素子回路及び駆動用回路とをそれぞれボン
ディングワイヤー等の配線部を介してそれぞれ接続した
感熱記録ヘッドの上記駆動用ＩＣ及び各配線部をエポキ
シ樹脂組成物の硬化物にて封止してなる感熱記録ヘッド
装置において、上記エポキシ樹脂組成物として、当該エ
ポキシ樹脂組成物から無機質充填剤を除いたものの１．
５ｍｍ以上の厚さの硬化物のショアＤ硬度が上記両基板
のうち線膨張係数の大きい基板のガラス転移温度より３
０℃±５℃低い温度において６０以下であり、かつ２５
℃において２５以上であるエポキシ樹脂組成物を使用し
たことを特徴とする感熱記録ヘッド装置を提供する。Therefore, the present invention provides (1) a semiconductor device in which an IC mounted on a substrate such as a glass epoxy resin laminated plate is sealed with a cured product of an epoxy resin composition,
As the above-mentioned epoxy resin composition, at a temperature where the Shore D hardness of a cured product having a thickness of 1.5 mm or more obtained by removing the inorganic filler from the epoxy resin composition is 30 ° C. ± 5 ° C. lower than the glass transition temperature of the substrate. A semiconductor device characterized by using an epoxy resin composition having a temperature of 60 or less and 25 or more at 25 ° C., and (2) a resin driving device having a heating substrate having a heating element circuit and a driving circuit. A circuit board, and a drive IC is mounted on the heat generating board or the drive circuit board.
C and the heating element circuit and the driving circuit are connected to each other via wiring portions such as bonding wires, and the driving IC and each wiring portion of the thermal recording head are sealed with a cured product of an epoxy resin composition. In the thermal recording head device, the epoxy resin composition is obtained by removing the inorganic filler from the epoxy resin composition.
The Shore D hardness of the cured product having a thickness of 5 mm or more is 3 than the glass transition temperature of the substrate having a large linear expansion coefficient among the above-mentioned substrates.
60 or less at a temperature of 0 ° C. ± 5 ° C. lower and 25
Provided is a thermal recording head device characterized by using an epoxy resin composition having a temperature of 25 or higher at 25 ° C.
【００１８】以下、本発明につき更に詳述すると、本発
明の半導体装置で封止に用いるエポキシ樹脂組成物とし
ては、室温で液状のものが好ましく、更に無溶剤型であ
るものが好ましい。この無溶剤タイプの液状エポキシ樹
脂組成物を構成する硬化性エポキシ樹脂としては、１分
子中に２個以上のエポキシ基を有するものが使用でき、
後述するような各種硬化剤によって硬化させ得ることが
可能である限り分子構造、分子量等に特に制限はなく、
従来から知られている種々のものを使用することができ
る。具体的には、例えばエピクロルヒドリンとビスフェ
ノールをはじめとする各種ノボラック樹脂から合成され
るエポキシ樹脂、下記一般式（１）で示される有機酸よ
り誘導されたエステル結合を含むエポキシ化合物、下記
一般式（２）で示されるポリブタジエンより誘導される
エポキシ化合物、脂環式エポキシ樹脂或いは塩素や臭素
原子等のハロゲン原子を導入したエポキシ樹脂等を挙げ
ることができる。The present invention will be described in more detail below. The epoxy resin composition used for encapsulation in the semiconductor device of the present invention is preferably liquid at room temperature, and more preferably solventless. As the curable epoxy resin constituting the solventless liquid epoxy resin composition, one having two or more epoxy groups in one molecule can be used,
There is no particular limitation on the molecular structure, molecular weight, etc. as long as it can be cured by various curing agents as described below,
Various conventionally known ones can be used. Specifically, for example, an epoxy resin synthesized from various novolac resins such as epichlorohydrin and bisphenol, an epoxy compound containing an ester bond derived from an organic acid represented by the following general formula (1), and the following general formula (2 Examples of the epoxy compound derived from polybutadiene, alicyclic epoxy resin, epoxy resin into which a halogen atom such as chlorine or bromine atom is introduced, and the like can be given.
【００１９】[0019]
【化１】 [Chemical 1]
【００２０】更に、シリコーン変性エポキシ樹脂も用い
ることができ、このシリコーン変性エポキシ樹脂として
は（３）〜（７）で示される化合物中の水素原子と下記
式（８）〜（１０）で示されるアルケニル基含有エポキ
シ化ノボラック樹脂のアルケニル基との付加反応により
得られる共重合体等が挙げられ、とりわけ（４）の化合
物と（５）の化合物より得られる共重合体が好ましく用
いられる。Further, a silicone-modified epoxy resin can also be used, and this silicone-modified epoxy resin is represented by the hydrogen atom in the compound represented by (3) to (7) and the following formulas (8) to (10). Examples thereof include a copolymer obtained by an addition reaction with an alkenyl group of an alkenyl group-containing epoxidized novolak resin, and a copolymer obtained from the compound (4) and the compound (5) is particularly preferably used.
【００２１】[0021]
【化２】 [Chemical 2]
【００２２】[0022]
【化３】 （但し、上記式（８）〜（１０）において、ｐ，ｑは通
常１≦ｐ≦１０、１≦ｑ≦３で示される正数を表わ
す。）[Chemical 3] (However, in the above formulas (8) to (10), p and q usually represent positive numbers represented by 1 ≦ p ≦ 10 and 1 ≦ q ≦ 3.)
【００２３】これらのエポキシ樹脂の中でもビスフェノ
ール型エポキシ樹脂、有機酸より誘導されたエステル結
合を含むエポキシ樹脂、長鎖のアルキル基を含む化合物
より誘導されるエポキシ樹脂、シリコーン変性エポキシ
樹脂が好ましい。Among these epoxy resins, a bisphenol type epoxy resin, an epoxy resin containing an ester bond derived from an organic acid, an epoxy resin derived from a compound containing a long-chain alkyl group, and a silicone-modified epoxy resin are preferable.
【００２４】なお、上記エポキシ樹脂は、その使用に当
っては必ずしも１種類の使用に限定されるものではな
く、２種類又はそれ以上を混合して使用してもよい。The epoxy resin is not necessarily limited to one type of use in use, and two or more types may be mixed and used.
【００２５】また、上記エポキシ樹脂使用に際して、モ
ノエポキシ化合物を適宜併用することは差し支えない。
このモノエポキシ化合物として具体的には、スチレンオ
キシド，シクロヘキセンオキシド，プロピレンオキシ
ド，メチルグリシジルエーテル，エチルグリシジルエー
テル，フェニルグリシジルエーテル，アリルグリシジル
エーテル，オクチレンオキシド，ドデセンオキシド等が
例示される。When the above epoxy resin is used, a monoepoxy compound may be appropriately used in combination.
Specific examples of the monoepoxy compound include styrene oxide, cyclohexene oxide, propylene oxide, methyl glycidyl ether, ethyl glycidyl ether, phenyl glycidyl ether, allyl glycidyl ether, octylene oxide, and dodecene oxide.
【００２６】一方、硬化剤として具体的には、ジアミノ
ジフェニルメタン，ジアミノフェニルスルホン，メタフ
ェニレンジアミン等に代表されるアミン系硬化剤、無水
フタル酸、無水ピロメリット酸，無水ベンゾフェノンテ
トラカルボン酸、下記一般式で示される長鎖脂肪族酸無
水物、下記一般式（１１）で示されるシリコーン変性酸
無水物等の酸無水物系硬化剤、あるいはフェノールノボ
ラック，クレゾールノボラック等の１分子中に２個以上
の水酸基を有するフェノールノボラック硬化剤が例示さ
れる。これらの中では、低粘度で低応力のエポキシ樹脂
組成物を得るため酸無水物系硬化剤が好ましく用いられ
る。On the other hand, specific examples of the curing agent include amine-based curing agents represented by diaminodiphenylmethane, diaminophenylsulfone, metaphenylenediamine, phthalic anhydride, pyromellitic dianhydride, benzophenone tetracarboxylic anhydride, and the following general compounds. A long-chain aliphatic acid anhydride represented by the formula, an acid anhydride curing agent such as a silicone-modified acid anhydride represented by the following general formula (11), or two or more in one molecule such as phenol novolac or cresol novolac The phenol novolac curing agent having a hydroxyl group of is exemplified. Among these, acid anhydride type curing agents are preferably used in order to obtain an epoxy resin composition having low viscosity and low stress.
【００２７】[0027]
【化４】 [Chemical 4]
【００２８】[0028]
【化５】 （Ｒ1はＣ2〜Ｃ8のアルキレン基、Ｒ2，Ｒ3，Ｒ4はメチ
ル基、エチル基、フェニル基、アルケニル基、Ｘはアル
コキシ基、プロペニル基、アルケニル基、ｎは０，１，
２、ｍは０又は１以上の整数、ｌは０，１，２である。
Ｒ5は水酸基又はアルキル基である。）[Chemical 5] (R 1 is a C 2 to C 8 alkylene group, R 2 , R 3 and R 4 are methyl groups, ethyl groups, phenyl groups, alkenyl groups, X is an alkoxy group, propenyl group, alkenyl group, and n is 0.1. ，
2, m is 0 or an integer of 1 or more, and l is 0, 1, 2.
R 5 is a hydroxyl group or an alkyl group. )
【００２９】これらの硬化剤の使用量は通常量とするこ
とができるが、エポキシ樹脂のエポキシ基の当量に対し
て５０〜１５０当量％、特に８０〜１１０当量％の範囲
とすることが好ましい。The amount of these curing agents used can be a usual amount, but it is preferably in the range of 50 to 150 equivalent%, particularly 80 to 110 equivalent% based on the equivalent of the epoxy groups of the epoxy resin.
【００３０】更に、エポキシ樹脂組成物においては、上
記硬化剤とエポキシ樹脂との反応を促進させる目的で、
各種硬化促進剤、例えばイミダゾール或いはその誘導
体、三級アミン系誘導体、ホスフィン系誘導体、シクロ
アミジン誘導体等を併用することは何ら差し支えない。
なお、これらの硬化促進剤の配合量も通常の範囲とする
ことができる。Further, in the epoxy resin composition, for the purpose of promoting the reaction between the curing agent and the epoxy resin,
Various curing accelerators such as imidazole or its derivative, tertiary amine derivative, phosphine derivative and cycloamidine derivative may be used in combination.
In addition, the compounding amount of these curing accelerators can also be made into the usual range.
【００３１】また、エポキシ樹脂組成物中には無機質充
填剤を配合することができる。この場合使用する無機質
充填剤の種類、単独使用あるいは複数種の併用等に制限
はなく、適宜選択される。無機質充填剤としては、例え
ば結晶性シリカ、非結晶性シリカ等の天然シリカ、合成
高純度シリカ、合成球状シリカ、タルク、マイカ、窒化
珪素、ボロンナイトライド、アルミナなどから選ばれる
１種又は２種以上を使用することができる。Further, an inorganic filler may be added to the epoxy resin composition. In this case, there is no limitation on the type of inorganic filler to be used, a single use or a combination of two or more types, and it is appropriately selected. As the inorganic filler, for example, one or two kinds selected from natural silica such as crystalline silica and amorphous silica, synthetic high-purity silica, synthetic spherical silica, talc, mica, silicon nitride, boron nitride, and alumina. The above can be used.
【００３２】上記無機質充填剤の配合量は、本発明にお
いては基板との線膨張係数を同じとするために高配合と
する必要はないが、作業性に影響を与えない範囲で使用
することができる。In the present invention, the blending amount of the above-mentioned inorganic filler does not need to be high so as to have the same linear expansion coefficient as that of the substrate, but it may be used within a range that does not affect workability. it can.
【００３３】エポキシ樹脂組成物には、更に必要に応じ
低応力化剤、接着向上用炭素官能性シラン、ワックス
類、ステアリン酸等の脂肪酸及びその金属塩等の離型
剤、カーボンブラックなどの顔料、染料、酸化防止剤、
表面処理剤（γ−グリシドキシプロピルトリメトキシシ
ランなど）、各種導電性充填剤、チクソ性付与剤、その
他添加剤を配合することができる。特にチクソ性付与剤
としては平均粒径５μｍ以下の微粉球状シリカを使用す
ることが好ましく、更に好ましくは平均粒径２μｍ以下
の球状シリカを使用することである。The epoxy resin composition may further contain a stress reducing agent, a carbon functional silane for improving adhesion, a wax, a release agent such as fatty acids such as stearic acid and metal salts thereof, and a pigment such as carbon black. , Dyes, antioxidants,
Surface treatment agents (γ-glycidoxypropyltrimethoxysilane etc.), various conductive fillers, thixotropy imparting agents, and other additives can be added. Particularly, as the thixotropy-imparting agent, it is preferable to use fine powder spherical silica having an average particle diameter of 5 μm or less, and more preferably spherical silica having an average particle diameter of 2 μm or less.
【００３４】本発明のエポキシ樹脂組成物は、上記の成
分から構成することができるが、この場合、このエポキ
シ樹脂組成物から無機質充填剤を除いたものを１．５ｍ
ｍ以上の厚さに硬化させた硬化物のショアＤ硬度が、こ
のエポキシ樹脂組成物が封止される半導体装置の基板の
ガラス転移温度より３０℃±５℃低い温度において６０
以下、好ましくは５０以下、更に好ましくは４５以下と
することが必要であり、ショアＤ硬度が６０より大きい
と基板のそりが大きくなり、本発明の目的を達成し得な
い。また、上記硬化物は２５℃においてショアＤ硬度が
２５以上、好ましくは７０以上、更に好ましくは８０以
上であることが必要であり、ショアＤ硬度が２５より低
いと、半導体装置の封止用として硬度が不足し、半導体
装置に対し十分な耐衝撃性を与えることができない。The epoxy resin composition of the present invention can be composed of the above components. In this case, the epoxy resin composition excluding the inorganic filler is 1.5 m.
The Shore D hardness of the cured product cured to a thickness of m or more is 60 at a temperature lower by 30 ° C. ± 5 ° C. than the glass transition temperature of the substrate of the semiconductor device in which this epoxy resin composition is sealed.
Hereafter, it is necessary to set it to preferably 50 or less, more preferably 45 or less. If the Shore D hardness is more than 60, the warp of the substrate becomes large and the object of the present invention cannot be achieved. Further, the above-mentioned cured product needs to have a Shore D hardness of 25 or more, preferably 70 or more, more preferably 80 or more at 25 ° C. When the Shore D hardness is lower than 25, it is used for sealing a semiconductor device. The hardness is insufficient, and sufficient impact resistance cannot be given to the semiconductor device.
【００３５】なお、本発明のエポキシ樹脂組成物で封止
される半導体装置の基板がＴＰＨ装置のように２種又は
それ以上存する場合の上記硬化物のショアＤの硬度は、
線膨張係数の大きい基板を基準とするもので、その基板
のガラス転移温度より３０℃±５℃低い温度におけるシ
ョアＤ硬度が６０以下であるように選択される。The hardness of Shore D of the above-mentioned cured product when the substrate of the semiconductor device sealed with the epoxy resin composition of the present invention is of two or more types like the TPH device is:
It is based on a substrate having a large coefficient of linear expansion, and is selected so that the Shore D hardness is 60 or less at a temperature 30 ° C. ± 5 ° C. lower than the glass transition temperature of the substrate.
【００３６】本発明のエポキシ樹脂組成物は、以上のよ
うな硬度を有するように上記成分の種類、配合量などを
選定することにより調製されるが、その調製は通常の方
法を採用し得、成分の配合順序などに特に制限はない。The epoxy resin composition of the present invention is prepared by selecting the type and amount of the above components so as to have the above hardness, and the preparation can be carried out by a usual method. There is no particular limitation on the order of mixing the components.
【００３７】本発明の半導体装置は、その基板上に搭載
されたＩＣを上記エポキシ樹脂組成物の硬化物で封止し
たものであるが、この場合、基板は有機樹脂を主体とし
たもので、例えばガラスエポキシ樹脂積層板、ＢＴレジ
ン、ポリイミドフィルム等を挙げることができる。この
場合、一般にガラスエポキシ樹脂積層板のＴｇは、１２
０〜１７０℃、線膨張係数（α）は、１．５〜２．５×
１０-5／℃、ＢＴレジンのＴｇは２００〜２１０℃、線
膨張係数（α）は１．５〜４．５×１０-5／℃、ポリイ
ミドフィルムのＴｇは２８０〜３００℃、線膨張係数
（α）は１．７〜４．３×１０-5／℃である。これらの
中では、特にガラスエポキシ樹脂積層板を基板とした半
導体装置が本発明において上述した効果を有効に発揮す
る。In the semiconductor device of the present invention, the IC mounted on the substrate is sealed with a cured product of the epoxy resin composition. In this case, the substrate is mainly made of organic resin, For example, glass epoxy resin laminated board, BT resin, polyimide film, etc. can be mentioned. In this case, the glass epoxy resin laminate generally has a Tg of 12
0 to 170 ° C., coefficient of linear expansion (α) is 1.5 to 2.5 ×
10 −5 / ° C., Tg of BT resin is 200 to 210 ° C., linear expansion coefficient (α) is 1.5 to 4.5 × 10 −5 / ° C., Tg of polyimide film is 280 to 300 ° C., linear expansion coefficient (Α) is 1.7 to 4.3 × 10 −5 / ° C. Among these, a semiconductor device using a glass epoxy resin laminated board as a substrate effectively exhibits the effects described above in the present invention.
【００３８】また、本発明の半導体装置は、ＴＰＨ装置
を包含するが、本発明はこのＴＰＨ装置にも有効であ
る。ＴＰＨ装置は、発熱素子回路を有する発熱基板と駆
動用回路を有する樹脂製駆動用回路基板とを具備し、該
発熱基板又は駆動用回路基板上に駆動用ＩＣを装着する
と共に、この駆動用ＩＣと上記発熱素子回路及び駆動用
回路とをそれぞれボンディングワイヤー等の配線部を介
してそれぞれ接続した感熱記録ヘッドの上記駆動用ＩＣ
及び各配線部を封止材にて封止したものである。The semiconductor device of the present invention includes a TPH device, but the present invention is also effective for this TPH device. The TPH device includes a heat generating substrate having a heat generating element circuit and a resin drive circuit board having a drive circuit. The drive IC is mounted on the heat generating substrate or the drive circuit board, and the drive IC is provided. And the heating element circuit and the driving circuit are connected to each other through wiring portions such as bonding wires, respectively, and the driving IC of the thermal recording head
Also, each wiring portion is sealed with a sealing material.
【００３９】このＴＰＨ装置における封止材による封止
につき説明すると、例えば図１乃至図４に示したよう
に、発熱素子回路（発熱素子）１ａを有する発熱基板１
と駆動用回路２ａを有する駆動用回路基板２とをそれら
の一端部において接合し、該発熱基板１面又は駆動用回
路基板２面のそれらの接合端部に近接して駆動用ＩＣ３
をその端子を上記接合方向に沿って搭載し、このＩＣ３
の端子と上記発熱素子回路１ａ及び駆動用回路２ａとを
ボンディングワイヤー等の配線部４，５を介してそれぞ
れ導通してなる感熱記録ヘッドの上記ＩＣ３及び各配線
部４，５をそれぞれ上記特性を有するエポキシ樹脂封止
材７で封止するものである。なお、図中６は放熱基板で
ある。The sealing with the sealing material in this TPH device will be explained. For example, as shown in FIGS. 1 to 4, the heating substrate 1 having the heating element circuit (heating element) 1a.
And the driving circuit board 2 having the driving circuit 2a are joined at one end thereof, and the driving IC 3 is provided close to the joining end portion of the surface of the heat generating substrate 1 or the surface of the driving circuit substrate 2
The terminal is mounted along the joining direction, and the IC3
Of the above-mentioned IC 3 and each wiring portion 4 and 5 of the thermal recording head in which the terminals of the heat generating element circuit 1a and the driving circuit 2a are electrically connected via wiring portions 4 and 5 such as bonding wires. It is to be sealed with the epoxy resin sealing material 7 that it has. In the figure, 6 is a heat dissipation substrate.
【００４０】このような感熱記録ヘッドは、その発熱基
板１をプラテンローラ８と接触させてこれらの発熱基板
１とプラテンローラ８の間に感熱記録紙９を通すもので
ある。In such a heat-sensitive recording head, the heat-generating substrate 1 is brought into contact with the platen roller 8 and the heat-sensitive recording paper 9 is passed between the heat-generating substrate 1 and the platen roller 8.
【００４１】なお、ＩＣ３は、図１〜３に示すように駆
動用回路基板２面に装着されたもの、図４に示すように
発熱基板１面に装着されたものの両方がある。There are both the IC 3 mounted on the surface of the driving circuit board 2 as shown in FIGS. 1 to 3 and the IC 3 mounted on the surface of the heat generating board 1 as shown in FIG.
【００４２】この場合、一般にＴＰＨ装置は、発熱基板
としてアルミナのセラミックス（線膨張係数が約０．７
×１０-5／℃）、駆動用回路基板としてガラスエポキシ
樹脂積層板が用いられており、上述したように半導体素
子の配線部を封止する場合、必然的にガラスエポキシ積
層板上の配線部を封止することになるので、本発明のエ
ポキシ樹脂組成物はかかるＴＰＨ装置の封止に特に有効
である。In this case, in general, the TPH device uses alumina ceramics (having a linear expansion coefficient of about 0.7) as a heat generating substrate.
(× 10 −5 / ° C.), a glass epoxy resin laminated plate is used as a driving circuit board, and when the wiring part of the semiconductor element is sealed as described above, the wiring part on the glass epoxy laminated plate is inevitable. Therefore, the epoxy resin composition of the present invention is particularly effective for sealing such a TPH device.
【００４３】[0043]
【発明の効果】本発明の半導体装置は、エポキシ樹脂組
成物を封止材として使用していても基板にそりが生じ難
く、信頼性の高いものである。The semiconductor device of the present invention is highly reliable because the substrate is unlikely to warp even when the epoxy resin composition is used as a sealing material.
【００４４】[0044]
【実施例】以下、実施例と比較例を示して本発明を具体
的に説明するが、本発明は下記の実施例に制限されるも
のではない。なお、以下の例において、部はいずれも重
量部である。EXAMPLES The present invention will be specifically described below by showing Examples and Comparative Examples, but the present invention is not limited to the following Examples. In the following examples, all parts are parts by weight.
【００４５】［実施例１〜８、比較例１〜４］表１に示
した配合に従ってエポキシ樹脂組成物を調製した。つい
で、図５に示したように７ｍｍ×７ｍｍ角の半導体素子
ａを８個搭載したガラスエポキシ積層板（Ｔｇ＝１４２
℃、線膨張係数（Ｔｇ以下）２．２×１０-5／℃、５０
ｍｍ×２０ｍｍ、厚さ０．８ｍｍ）ｂを金型にセット
し、調製したエポキシ樹脂組成物ｃを厚さ３ｍｍで滴下
注入した後、１００℃で１時間、更に１５０℃で２時間
硬化させて樹脂封止型半導体装置ｄを製造した。[Examples 1 to 8 and Comparative Examples 1 to 4] Epoxy resin compositions were prepared according to the formulations shown in Table 1. Then, as shown in FIG. 5, a glass epoxy laminated plate (Tg = 142) having eight semiconductor elements a of 7 mm × 7 mm square mounted thereon.
℃, linear expansion coefficient (Tg or less) 2.2 × 10 -5 / ℃, 50
(mm × 20 mm, thickness 0.8 mm) b was set in a mold, and the prepared epoxy resin composition c was dropped and injected with a thickness of 3 mm, followed by curing at 100 ° C. for 1 hour and further at 150 ° C. for 2 hours. A resin-sealed semiconductor device d was manufactured.
【００４６】このように製造した半導体装置ｄのそり量
（δ（ｍｍ））を図６に示した方法で室温において測定
した。The amount of warpage (δ (mm)) of the thus manufactured semiconductor device d was measured at room temperature by the method shown in FIG.
【００４７】また、表１に示される各々のエポキシ樹脂
組成物より充填剤を除いたレジンのみのショアＤ硬化物
硬度を１１０℃と２５℃で測定すると共に、充填剤を含
んだショアＤ硬化物硬度を１１０℃で測定した。更に、
ガラス転移温度、線膨張係数（３０〜５０℃）も測定し
た。結果を表１に併記する。なお、実施例４と実施例８
のエポキシ樹脂組成物の測定温度に対する硬度をガラス
エポキシ積層板と比較して示したグラフを図７に示し
た。Further, the hardness of Shore D cured product obtained by removing the filler from each epoxy resin composition shown in Table 1 was measured at 110 ° C. and 25 ° C., and the Shore D cured product containing the filler was measured. Hardness was measured at 110 ° C. Furthermore,
The glass transition temperature and the coefficient of linear expansion (30 to 50 ° C.) were also measured. The results are also shown in Table 1. In addition, Example 4 and Example 8
A graph showing the hardness of the epoxy resin composition with respect to the measurement temperature in comparison with that of the glass epoxy laminate is shown in FIG.
【００４８】[0048]
【表１】 [Table 1]
【００４９】[0049]
【化６】 [Chemical 6]
【００５０】[0050]
【化７】 [Chemical 7]
【００５１】［実施例９〜１５、比較例５〜８］表２に
従ってエポキシ樹脂組成物を調製し、これらの組成物に
平均粒径１μｍ以下の球状シリカを配合してチクソ性を
付与した。ついで得られた組成物について１１０℃で１
時間、１５０℃で２時間硬化を行い、充填剤を除いたレ
ジンのみのショアＤ硬化物硬度を１１０℃と２５℃で測
定すると共に、充填剤を含んだショアＤ硬化物硬度を１
１０℃で測定した。更に、ガラス転移温度、線膨張係数
（３０〜５０℃）も測定した。[Examples 9 to 15 and Comparative Examples 5 to 8] Epoxy resin compositions were prepared according to Table 2, and spherical silica having an average particle diameter of 1 µm or less was added to these compositions to impart thixotropy. Then, the composition obtained was 1 at 110 ° C.
Curing was carried out at 150 ° C for 2 hours, and the hardness of the Shore D cured product of the resin without the filler was measured at 110 ° C and 25 ° C, and the hardness of the Shore D cured product containing the filler was 1
It was measured at 10 ° C. Further, the glass transition temperature and the coefficient of linear expansion (30 to 50 ° C.) were also measured.
【００５２】また、ＴＰＨ装置を実際に封止して製作
し、封止後のＴＰＨ装置のそり量を測定した。図８にそ
り量の測定方法を示す。ここでＴＰＨ装置は、発熱基板
がアルミナセラミックスで線膨張係数が０．７×１０-5
／℃、駆動用回路基板がガラスエポキシ積層板で線膨張
係数が２．２×１０-5／℃、Ｔｇが１４０℃であり、次
に使用したＴＰＨ装置を示す。 ＜ＴＰＨ装置Ａ＞断面形状が図４に示したもので、Ａ４
サイズであり、図４中における寸法を下記に示す。 Ｉ ：１８ｍｍ ＩＩ ：１５ｍｍ ＩＩＩ：２５ｍｍ ＩＶ ： ７ｍｍ ＜ＴＰＨ装置Ｂ＞断面形状が図４に示したもので、Ａ４
サイズであり、図４中における寸法を下記に示す。 Ｉ ：１０ｍｍ ＩＩ ：１０ｍｍ ＩＩＩ：１５ｍｍ ＩＶ ： ５ｍｍ 結果を表２に併記する。なお、表中の注は表１と同様で
ある。The TPH device was actually sealed and manufactured, and the amount of warpage of the TPH device after sealing was measured. FIG. 8 shows a method of measuring the amount of warpage. Here, in the TPH device, the heat generating substrate is made of alumina ceramics and the coefficient of linear expansion is 0.7 × 10 −5.
/ ° C, the driving circuit board was a glass epoxy laminate, the coefficient of linear expansion was 2.2 x 10 -5 / ° C, and the Tg was 140 ° C. The TPH device used next is shown below. <TPH device A> The cross-sectional shape is shown in FIG.
The size is shown in FIG. 4 below. I: 18 mm II: 15 mm III: 25 mm IV: 7 mm <TPH device B> The cross-sectional shape is as shown in FIG.
The size is shown in FIG. 4 below. I: 10 mm II: 10 mm III: 15 mm IV: 5 mm The results are also shown in Table 2. Note that the notes in the table are the same as in Table 1.
【００５３】[0053]
【表２】 [Table 2]
【図１】感熱記録ヘッドの一例を示す平面図である。FIG. 1 is a plan view showing an example of a thermal recording head.
【図２】感熱記録ヘッドの他の例を示す断面図である。FIG. 2 is a sectional view showing another example of the thermal recording head.
【図３】感熱記録ヘッドの別の例を示す断面図である。FIG. 3 is a sectional view showing another example of the thermal recording head.
【図４】実施例において使用した感熱記録ヘッドを示す
断面図である。FIG. 4 is a sectional view showing a thermal recording head used in Examples.
【図５】実施例で用いた樹脂封止型半導体装置を示す斜
視図である。FIG. 5 is a perspective view showing a resin-sealed semiconductor device used in an example.
【図６】図５の樹脂封止型半導体装置のそり量を測定す
る方法を示す断面図である。6 is a cross-sectional view showing a method for measuring the warp amount of the resin-encapsulated semiconductor device of FIG.
【図７】樹脂温度と樹脂硬化物の硬度との関係を示すグ
ラフである。FIG. 7 is a graph showing the relationship between the resin temperature and the hardness of the resin cured product.
【図８】実施例で用いた感熱記録ヘッドのそり量を測定
する方法を示す断面図である。FIG. 8 is a cross-sectional view showing a method for measuring the warp amount of the thermal recording head used in the examples.
【符号の説明】 １ 発熱基板 １ａ 発熱素子回路 ２ 駆動用回路基板 ２ａ 駆動用回路 ３ 駆動用ＩＣ ４、５ 配線部 ６ 放熱基板 ７ 封止樹脂 ８ プラテンローラ ９ 感熱記録紙 ａ 半導体素子 ｂ ガラスエポキシ積層板 ｃ 封止樹脂 ｄ 樹脂封止型半導体装置 δ そり量[Explanation of reference numerals] 1 heat generating substrate 1a heat generating element circuit 2 driving circuit board 2a driving circuit 3 driving IC 4, 5 wiring section 6 heat radiating substrate 7 sealing resin 8 platen roller 9 thermal recording paper a semiconductor element b glass epoxy Laminated plate c Encapsulation resin d Resin encapsulation type semiconductor device δ Deflection amount
───────────────────────────────────────────────────── フロントページの続き (72)発明者 二ッ森 浩二 群馬県碓氷郡松井田町大字人見１番地10 信越化学工業株式会社シリコーン電子材料 技術研究所内 (72)発明者 塩原 利夫 群馬県碓氷郡松井田町大字人見１番地10 信越化学工業株式会社シリコーン電子材料 技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Koji Nimori Mori Matsuida-cho, Usui-gun, Gunma No. 1 Hitomi, Shin-Etsu Chemical Co., Ltd. Silicone Electronic Materials Research Laboratory (72) Toshio Shiobara Matsuida-cho, Usui-gun, Gunma Hitomi, Daiji 10 Shin-Etsu Chemical Co., Ltd. Silicon Electronic Materials Research Laboratory
Claims (4)
組成物の硬化物にて封止してなる半導体装置において、
上記エポキシ樹脂組成物として、当該エポキシ樹脂組成
物から無機質充填剤を除いたものの１．５ｍｍ以上の厚
さの硬化物のショアＤ硬度が上記基板のガラス転移温度
より３０℃±５℃低い温度において６０以下であり、か
つ２５℃において２５以上であるエポキシ樹脂組成物を
使用したことを特徴とする半導体装置。1. A semiconductor device in which an IC mounted on a substrate is sealed with a cured product of an epoxy resin composition,
As the above-mentioned epoxy resin composition, at a temperature where the Shore D hardness of a cured product having a thickness of 1.5 mm or more obtained by removing the inorganic filler from the epoxy resin composition is 30 ° C. ± 5 ° C. lower than the glass transition temperature of the substrate. A semiconductor device comprising an epoxy resin composition having a temperature of 60 or less and 25 or more at 25 ° C.
請求項１記載の半導体装置。2. The semiconductor device according to claim 1, wherein the substrate is a glass epoxy resin laminated plate.
回路を有する樹脂製駆動用回路基板とを具備し、該発熱
基板又は駆動用回路基板上に駆動用ＩＣを装着すると共
に、この駆動用ＩＣと上記発熱素子回路及び駆動用回路
とをそれぞれボンディングワイヤー等の配線部を介して
それぞれ接続した感熱記録ヘッドの上記駆動用ＩＣ及び
各配線部をエポキシ樹脂組成物の硬化物にて封止してな
る感熱記録ヘッド装置において、上記エポキシ樹脂組成
物として、当該エポキシ樹脂組成物から無機質充填剤を
除いたものの１．５ｍｍ以上の厚さの硬化物のショアＤ
硬度が上記両基板のうち線膨張係数の大きい基板のガラ
ス転移温度より３０℃±５℃低い温度において６０以下
であり、かつ２５℃において２５以上であるエポキシ樹
脂組成物を使用したことを特徴とする感熱記録ヘッド装
置。3. A heating substrate having a heating element circuit and a resin driving circuit board having a driving circuit, wherein a driving IC is mounted on the heating substrate or the driving circuit board, and the driving IC is mounted on the driving circuit board. The driving IC and each wiring portion of the thermal recording head in which the IC and the heating element circuit and the driving circuit are respectively connected via wiring portions such as bonding wires are sealed with a cured product of an epoxy resin composition. In the thermal recording head device, the Shore D of a cured product having a thickness of 1.5 mm or more obtained by removing the inorganic filler from the epoxy resin composition is used as the epoxy resin composition.
An epoxy resin composition having a hardness of 60 or less at a temperature 30 ° C. ± 5 ° C. lower than the glass transition temperature of a substrate having a large linear expansion coefficient of both substrates and 25 or more at 25 ° C. is used. Thermal recording head device.
層板である請求項３記載の感熱記録ヘッド装置。4. The thermal recording head device according to claim 3, wherein the driving circuit board is a glass epoxy resin laminated plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15421394A JP2842226B2 (en) | 1994-06-13 | 1994-06-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15421394A JP2842226B2 (en) | 1994-06-13 | 1994-06-13 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07335791A true JPH07335791A (en) | 1995-12-22 |
| JP2842226B2 JP2842226B2 (en) | 1998-12-24 |
Family
ID=15579321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15421394A Expired - Lifetime JP2842226B2 (en) | 1994-06-13 | 1994-06-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2842226B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009147828A1 (en) | 2008-06-05 | 2009-12-10 | 住友ベークライト株式会社 | Manufacturing method for semiconductor device and semiconductor device |
| JP2014015490A (en) * | 2012-07-05 | 2014-01-30 | Nitto Denko Corp | Encapsulation resin sheet, manufacturing method of electronic component package, and electronic component package |
| CN110246809A (en) * | 2018-03-08 | 2019-09-17 | 日东电工株式会社 | Sheet for sealing |
-
1994
- 1994-06-13 JP JP15421394A patent/JP2842226B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009147828A1 (en) | 2008-06-05 | 2009-12-10 | 住友ベークライト株式会社 | Manufacturing method for semiconductor device and semiconductor device |
| JP2014015490A (en) * | 2012-07-05 | 2014-01-30 | Nitto Denko Corp | Encapsulation resin sheet, manufacturing method of electronic component package, and electronic component package |
| CN110246809A (en) * | 2018-03-08 | 2019-09-17 | 日东电工株式会社 | Sheet for sealing |
| JP2019160869A (en) * | 2018-03-08 | 2019-09-19 | 日東電工株式会社 | Sealing sheet |
| TWI805702B (en) * | 2018-03-08 | 2023-06-21 | 日商日東電工股份有限公司 | Sealable sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2842226B2 (en) | 1998-12-24 |
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