JPH07294724A - Color resin pattern forming method - Google Patents
Color resin pattern forming methodInfo
- Publication number
- JPH07294724A JPH07294724A JP9187694A JP9187694A JPH07294724A JP H07294724 A JPH07294724 A JP H07294724A JP 9187694 A JP9187694 A JP 9187694A JP 9187694 A JP9187694 A JP 9187694A JP H07294724 A JPH07294724 A JP H07294724A
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- JP
- Japan
- Prior art keywords
- negative
- positive
- exposure
- photosensitive
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Optical Filters (AREA)
- Liquid Crystal (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はカラー樹脂パターンの形
成方法、特に液晶表示パネル等に使用するカラーフィル
タの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a color resin pattern, and more particularly to a method for manufacturing a color filter used in a liquid crystal display panel or the like.
【０００２】近年、液晶表示パネルは薄型・軽量・低消
費電力等の利点を活かして様々な分野で利用されるよう
になり、その市場動向はカラー化・大画面化・高精細化
・低価格化に向かって進んでおり、カラー液晶表示パネ
ルの構成部品の一つであるカラーフィルタについて、色
度・透過率・製造歩留りの改善および低価格化が求めら
れている。In recent years, liquid crystal display panels have come to be used in various fields by taking advantage of advantages such as thinness, light weight and low power consumption, and the market trend thereof is colorization, large screen size, high definition and low price. The color filters, which are one of the components of the color liquid crystal display panel, are required to be improved in chromaticity / transmittance / manufacturing yield and reduced in price.
【０００３】[0003]
【従来の技術】カラー樹脂パターン、例えば液晶表示パ
ネル等に使用するカラーフィルタは、ガラスや各種プラ
スチック類にてなる透光性基板またはフィルムを支持体
とし、その表面に透光性の多数の着色パターンを形成し
てなる。かかるカラーフィルタにおいて、複数色の着色
樹脂パターンの製造方法は、一般に顔料分散法・染色法
・電着法・印刷法が知られている。2. Description of the Related Art A color resin pattern, for example, a color filter used for a liquid crystal display panel or the like uses a transparent substrate or film made of glass or various plastics as a support, and the surface thereof has a large number of transparent colors. It is formed by forming a pattern. In such a color filter, a pigment dispersion method, a dyeing method, an electrodeposition method, and a printing method are generally known as methods for producing colored resin patterns of a plurality of colors.
【０００４】フォトリソグラフィー技術を利用する前記
顔料分散法および染色法、即ち顔料を分散せしめた着色
樹脂パターンを支持体の表面に色別に形成する顔料分散
法と、被染色パターンを色別に形成する染色法は、微細
な着色パターンを高精度に形成できる特徴がある反面、
高精度を要するフォトリソグラフィー工程を繰り返すた
め製造工程が複雑となり、高価かつコストダウンが困難
である。The above-mentioned pigment dispersion method and dyeing method using photolithography technology, that is, a pigment dispersion method in which a colored resin pattern in which a pigment is dispersed is formed on the surface of a support by color, and a dyeing method in which a pattern to be dyed is formed by color The method has a feature that a fine colored pattern can be formed with high precision, but
Since the photolithography process that requires high accuracy is repeated, the manufacturing process becomes complicated, which is expensive and difficult to reduce the cost.
【０００５】電着技術を利用した前記電着法は、フォト
リソグラフィー技術を利用しないため製造工程が顔料分
散法および染色法より簡易である反面、電着液の管理が
難しくなって着色膜の特性にばらつきが生じ易いという
問題点がある。The above-mentioned electrodeposition method utilizing the electrodeposition technique is simpler in manufacturing process than the pigment dispersion method and the dyeing method because it does not utilize the photolithography technique, but it is difficult to control the electrodeposition liquid and the characteristics of the colored film are improved. However, there is a problem in that variations easily occur.
【０００６】版を使用する等の印刷技術を利用し、着色
パターンを支持体の表面に形成する前記印刷法は、製造
工程が他の方法に比べて簡易であり安価に製造できる反
面、着色パターンの形状が不正確となり厚さむらが生じ
易いため、最近の高性能化に対し追従し難いという問題
点がある。The printing method of forming a colored pattern on the surface of a support by using a printing technique such as using a plate has a simple manufacturing process and can be manufactured at a low cost as compared with other methods. Since the shape of is inaccurate and thickness unevenness is likely to occur, there is a problem that it is difficult to follow the recent improvement in performance.
【０００７】[0007]
【発明が解決しようとする課題】以上説明したように、
従来の製造方法によるカラーフィルタにおいて、カラー
樹脂パターンの精度および均一性に優れる顔料分散法お
よび染色法は、工程が複雑で工数が多くなるため、製造
歩留りが低く安価にできないという問題点がある。それ
らに対し従来の電着法および印刷法は、カラー樹脂パタ
ーンの精度および均一性が劣り要求される性能を確保し
難いという問題点があった。As described above,
In the color filter manufactured by the conventional manufacturing method, the pigment dispersion method and the dyeing method, which are excellent in the accuracy and uniformity of the color resin pattern, have a problem that the manufacturing yield is low and the cost cannot be reduced because the process is complicated and the number of steps is large. On the other hand, the conventional electrodeposition method and printing method have a problem that the accuracy and uniformity of the color resin pattern are poor and it is difficult to secure the required performance.
【０００８】[0008]
【課題を解決するための手段】本発明の目的は、従来の
顔料分散法による性能を確保し、かつ、安価なカラーフ
ィルタ（カラー樹脂パターン）を提供可能にすることで
ある。SUMMARY OF THE INVENTION An object of the present invention is to ensure the performance by the conventional pigment dispersion method and to provide an inexpensive color filter (color resin pattern).
【０００９】図１は本発明方法により赤・青・緑の３色
のカラー樹脂パターンを形成する基本製造工程の説明図
である。図１（ａ）に示す如く、透明支持体１の表面
に、ポジ型露光像とネガ型露光像とを形成できるポジ・
ネガ型両性レジスト膜３をスピンコート等によって形成
させる。FIG. 1 is an explanatory view of a basic manufacturing process for forming a color resin pattern of three colors of red, blue and green by the method of the present invention. As shown in FIG. 1 (a), a positive exposure image and a negative exposure image can be formed on the surface of the transparent support 1.
The negative amphoteric resist film 3 is formed by spin coating or the like.
【００１０】次いで、適当な透光部を有するマスクを使
用して図１（ｂ）に示す如く、レジスト膜３に、第１の
樹脂パターン例えば赤色樹脂パターンに対応しポジ型露
光像αと、第２の樹脂パターン例えば緑色樹脂パターン
に対応しネガ型露光像βと、第３の樹脂パターン例えば
青色樹脂パターンに対応する非露光像γとを形成する。Then, as shown in FIG. 1B, a positive exposure image α corresponding to the first resin pattern, for example, a red resin pattern, is formed on the resist film 3 by using a mask having an appropriate light transmitting portion. A negative exposure image β corresponding to the second resin pattern, eg, a green resin pattern, and a non-exposure image γ corresponding to the third resin pattern, eg, a blue resin pattern, are formed.
【００１１】次いで、レジスト膜３のポジ型露光像αを
除去する第１回目の現像処理を行なったのち、図１
（ｃ）に示す如く、ポジ型露光像αの除去跡を埋める赤
色ネガ型感光樹脂膜８を成膜し、支持体１の裏面より樹
脂膜８を感光させると共にレジスト膜３にポジ型露光像
を形成する波長の光９を照射する露光処理を行なう。Next, after performing a first development process for removing the positive exposure image α of the resist film 3, FIG.
As shown in (c), a red negative photosensitive resin film 8 for filling the removal trace of the positive exposure image α is formed, the resin film 8 is exposed from the back surface of the support 1, and the positive exposure image is formed on the resist film 3. An exposure process for irradiating light 9 having a wavelength that forms
【００１２】次いで、第２回目の現像処理を行なうと図
１（ｄ）に示す如く、樹脂膜８の残部からなる赤色樹脂
パターンＲが形成されると共に、レジスト膜３の非露光
像γが除去される。Next, when the second development process is performed, as shown in FIG. 1 (d), a red resin pattern R consisting of the rest of the resin film 8 is formed and the non-exposed image γ of the resist film 3 is removed. To be done.
【００１３】次いで、図１（ｅ）に示す如く、レジスト
膜３の非露光像γの除去跡を埋める緑色ネガ型感光樹脂
膜１０を成膜したのち、支持体１の裏面より樹脂膜１０
を感光させると共にレジスト膜３にポジ型露光像を形成
する波長の光１１を照射する露光処理を行なう。Next, as shown in FIG. 1E, a green negative photosensitive resin film 10 is formed to fill the removal traces of the non-exposed image γ of the resist film 3, and then the resin film 10 is applied from the back surface of the support 1.
And an exposure process of irradiating the resist film 3 with light 11 having a wavelength for forming a positive exposure image.
【００１４】次いで、第３回目の現像処理を行なうと図
１（ｆ）に示す如く、樹脂膜１０の残部からなる緑色樹
脂パターンＧが形成されると共に、レジスト膜３のネガ
型露光像βが除去される。Next, when the third developing process is performed, as shown in FIG. 1 (f), a green resin pattern G made up of the remainder of the resin film 10 is formed, and a negative exposure image β of the resist film 3 is formed. To be removed.
【００１５】そこで、図１（ｇ）に示す如く、レジスト
膜３のネガ型露光像βの除去跡を埋める青色ネガ型感光
樹脂膜１２を成膜し、支持体１の裏面より光１３を照射
して樹脂膜１２の露光処理を行なったのち、樹脂膜１２
の非露光部（樹脂パターンＲ，Ｇによる影部分）を第４
回目の現像処理で除去すると、図１（ｈ）に示す如く青
色樹脂パターンＢが形成され、カラーフィルタ１４が完
成する。Therefore, as shown in FIG. 1G, a blue negative photosensitive resin film 12 that fills the removal trace of the negative exposure image β of the resist film 3 is formed, and light 13 is irradiated from the back surface of the support 1. After the resin film 12 is exposed to light, the resin film 12
The non-exposed part (shadow part by resin patterns R and G) of
When removed by the developing process for the first time, a blue resin pattern B is formed as shown in FIG. 1H, and the color filter 14 is completed.
【００１６】[0016]
【作用】上記手段を基本構成とした本発明方法によれ
ば、レジスト膜３にポジ型露光像αとネガ型露光像βと
非露光像γとを形成したのち、それらの像α，β，γを
選択的に除去しながら着色樹脂膜を成膜し、その樹脂膜
から着色樹脂パターンＢ，Ｇ，Ｒを順次形成する。According to the method of the present invention having the above-mentioned means as a basic structure, the positive exposure image α, the negative exposure image β and the non-exposure image γ are formed on the resist film 3 and then these images α, β, A colored resin film is formed while selectively removing γ, and colored resin patterns B, G, and R are sequentially formed from the resin film.
【００１７】即ち、像α，β，γの形成には２枚または
１枚のマスクを使用して支持体１の表面から露光するよ
うになるが、着色樹脂膜の露光処理は支持体１の裏面か
らマスクを使用することなく、セルフアライメントによ
って行なわれるようになる。That is, in order to form the images α, β, γ, two or one masks are used to expose from the surface of the support 1, but the exposure processing of the colored resin film is performed on the support 1. The self-alignment is performed from the back side without using a mask.
【００１８】従って、着色樹脂パターンの精度は従来方
法の顔料分散法および染色法と同等になるが、該顔料分
散法および染色法より工程が簡易かつアライメントが容
易となる。Therefore, although the accuracy of the colored resin pattern is equal to that of the conventional pigment dispersion method and dyeing method, the process is simpler and the alignment is easier than the pigment dispersion method and dyeing method.
【００１９】[0019]
【実施例】図２は本発明方法の第１の実施例の説明図
（その１）、図３は本発明方法の第１の実施例の説明図
（その２）であり、その実施例によるカラーフィルタは
ブラックマトリクスを形成した支持体の表面に、赤色樹
脂パターンと緑色樹脂パターンと青色樹脂パターンを形
成してなる。2 is an explanatory view (No. 1) of the first embodiment of the method of the present invention, and FIG. 3 is an explanatory view (No. 2) of the first embodiment of the method of the present invention. The color filter is formed by forming a red resin pattern, a green resin pattern and a blue resin pattern on the surface of a support on which a black matrix is formed.
【００２０】図２（ａ）において、ガラスにてなる透光
性支持体１の表面に金属クロームにてなるブラックマト
リクス２を形成したのち、図２（ｂ）に示す如く支持体
１の表面に、ポジ型露光像を形成する感光波長とネガ型
露光像を形成する感光波長が異なるポジ・ネガ型レジス
ト膜３を形成する。In FIG. 2A, a black matrix 2 made of metal chrome is formed on the surface of a translucent support 1 made of glass, and then the surface of the support 1 is made as shown in FIG. 2B. A positive / negative resist film 3 having a different photosensitive wavelength for forming a positive exposure image and a different photosensitive wavelength for forming a negative exposure image is formed.
【００２１】スピンコータまたはロールコータを使用
し、厚さ２μｍ程度の均一厚さのレジスト膜３は、本実
施例において、ノボラック系樹脂バインダに芳香族系ビ
スアジドネガ型感光剤とジアゾナフトキノン系ポジ型感
光剤を分散させた三成分系レジストを使用した。A resist film 3 having a uniform thickness of about 2 μm is formed by using a spin coater or a roll coater. A three-component resist in which was dispersed was used.
【００２２】図８は前記三成分系レジストの感光剤の光
吸収スペクトルであり（フォトポリマーハンドブック・
工業調査会編・ｐ２４０〜２４３より引用）、縦軸がア
ブソーバンス（紫外線吸収率），横軸が照射光の波長で
ある図８において、実線はジアゾナフトキノン系ポジ型
感光剤の光吸収特性、破線は芳香族系ビスアジドネガ型
感光剤の光吸収特性であり、３００ｎｍ以下の波長の紫
外線露光によってネガ型露光像を形成し、４３５ｎｍピ
ークの通常のｇ線光の紫外線によってポジ型露光像を形
成する。FIG. 8 is a light absorption spectrum of the photosensitizer of the three-component resist (Photopolymer Handbook.
In FIG. 8 in which the vertical axis is the absorption (ultraviolet absorption rate) and the horizontal axis is the wavelength of the irradiation light, the solid line indicates the light absorption characteristics of the diazonaphthoquinone-based positive photosensitive agent. The broken line represents the light absorption characteristics of the aromatic bisazidone negative type photosensitizer, and a negative type exposure image is formed by exposure to ultraviolet rays having a wavelength of 300 nm or less, and a positive exposure image is formed by ordinary ultraviolet rays of g-line light having a peak of 435 nm. .
【００２３】そこで、図２（ｃ）に示す如く、第１の樹
脂パターン例えば赤色樹脂パターンに対応しポジ型感光
波長が透過する透孔部５を有する第１のマスク４を使用
した第１回目の露光処理では、波長が４３５ｎｍピーク
のｇ線光（紫外線）１５をレジスト膜３に照射し、レジ
スト膜３にポジ型露光像αを形成させる。Therefore, as shown in FIG. 2 (c), the first time using the first mask 4 having the through hole 5 corresponding to the first resin pattern, for example, the red resin pattern, through which the positive photosensitive wavelength is transmitted. In the exposure process (1), the resist film 3 is irradiated with g-ray light (ultraviolet light) 15 having a wavelength of 435 nm to form a positive exposure image α on the resist film 3.
【００２４】次いで、図２（ｄ）に示す如く、第２の樹
脂パターン例えば青色樹脂パターンに対応しネガ型感光
波長が透過する透孔部７を有するマスク６を使用した第
２回目の露光処理では、波長が２７０〜３００ｎｍの光
（紫外線）１６をレジスト膜３に照射し、レジスト膜３
にネガ型露光像βを形成する。Next, as shown in FIG. 2D, a second exposure process using a mask 6 having a through hole portion 7 corresponding to a second resin pattern, for example, a blue resin pattern, through which a negative photosensitive wavelength is transmitted. Then, the resist film 3 is irradiated with light (ultraviolet light) 16 having a wavelength of 270 to 300 nm,
To form a negative exposure image β.
【００２５】そして、第１回目および第２回目の露光処
理によって露光されない部分、即ち、第３の樹脂パター
ンである緑色樹脂パターンに対応する部分は、非露光像
γとなる。Then, a portion which is not exposed by the first and second exposure processing, that is, a portion corresponding to the green resin pattern which is the third resin pattern becomes a non-exposed image γ.
【００２６】次いで、例えば塩基性水溶液を使用した第
１回目の現像処理によりポジ型露光像αを除去したの
ち、図２（ｅ）に示す如く、ポジ型露光像αの除去跡を
埋める第１のネガ型感光樹脂膜８、例えば赤色顔料を分
散させたネガ型感光樹脂膜８を成膜し、支持体１の裏面
より樹脂膜８を感光させると共にレジスト膜３にポジ型
露光像を形成する波長の光（紫外線）９を照射する露光
処理、即ち、ｇｈｉ混合線（３６５〜４３５ｎｍピー
ク）光９を照射する第３回目の露光処理を行なう。Next, after removing the positive exposure image α by the first development process using a basic aqueous solution, for example, as shown in FIG. 2E, the first removal of the positive exposure image α is completed. Negative photosensitive resin film 8, for example, a negative photosensitive resin film 8 in which a red pigment is dispersed, is formed, the resin film 8 is exposed from the back surface of the support 1, and a positive exposure image is formed on the resist film 3. An exposure process of irradiating light (ultraviolet light) 9 having a wavelength, that is, a third exposure process of irradiating the ghi mixed line (365 to 435 nm peak) light 9 is performed.
【００２７】次いで、例えば塩基性水溶液を使用した第
２回目の現像処理を行なうと図２（ｆ）に示す如く、樹
脂膜８の残部からなる赤色樹脂パターンＲが形成される
と共に、レジスト膜３の非露光像γが除去される。Next, when the second development process is performed using, for example, a basic aqueous solution, a red resin pattern R consisting of the rest of the resin film 8 is formed and the resist film 3 is formed as shown in FIG. 2 (f). The non-exposure image γ of is removed.
【００２８】次いで、図２（ｇ）に示す如く、第２回目
の現像処理により除去されたレジスト膜３の非露光像γ
の除去跡を埋める第２のネガ型感光樹脂膜１０、例えば
緑色ネガ型感光樹脂膜１０を成膜したのち、支持体１の
裏面より樹脂膜１０を感光させると共にレジスト膜３に
ポジ型露光像を形成する波長の光（紫外線）１１を照射
する露光処理、即ち、波長３６５ｎｍピークのｉ線光１
１を照射する第４回目の露光処理を行なう。Next, as shown in FIG. 2G, the non-exposed image γ of the resist film 3 removed by the second developing process.
After forming the second negative photosensitive resin film 10 for filling the removal trace of, for example, the green negative photosensitive resin film 10, the resin film 10 is exposed from the back surface of the support 1 and the positive exposure image is formed on the resist film 3. Exposure process of irradiating light (ultraviolet ray) 11 having a wavelength that forms a light, that is, i-line light 1 having a wavelength of 365 nm peak
The fourth exposure process of irradiating 1 is performed.
【００２９】次いで、例えば塩基性水溶液を使用した第
３回目の現像処理を行なうと図３（ａ）に示す如く、樹
脂膜１０の残部からなる緑色樹脂パターンＧが形成され
ると共に、レジスト膜３のネガ型露光像βが除去され
る。Next, for example, when the third developing process using a basic aqueous solution is performed, a green resin pattern G which is the rest of the resin film 10 is formed and the resist film 3 is formed as shown in FIG. 3 (a). Negative exposure image β is removed.
【００３０】そこで、図３（ｂ）に示す如く、第３回目
の現像処理により除去されたレジスト膜３のネガ型露光
像βの除去跡を埋める第３のネガ型感光樹脂膜１２、例
えば青色ネガ型感光樹脂膜１２を成膜し、支持体１の裏
面より樹脂膜１２を感光させる光１３（紫外線）、即
ち、波長３６５ｎｍピークのｉ線光１３を照射し樹脂膜
１２を感光させる第５回目の露光処理を行なったのち、
例えば塩基性水溶液を使用した第４回目の現像処理を行
なう。Therefore, as shown in FIG. 3B, a third negative photosensitive resin film 12, for example, blue, which fills the removal trace of the negative exposure image β of the resist film 3 removed by the third developing process. The negative type photosensitive resin film 12 is formed, and light 13 (ultraviolet ray) for exposing the resin film 12 from the back surface of the support 1, that is, i-line light 13 having a wavelength of 365 nm peak is irradiated to expose the resin film 12 to the fifth. After performing the second exposure process,
For example, the fourth development processing using a basic aqueous solution is performed.
【００３１】すると、樹脂膜１２の非露光部（樹脂パタ
ーンＲ，Ｇによる影部分）が除去されて図３（ｃ）に示
す如く、支持体１の表面に赤，青，緑の着色樹脂パター
ンＲ，Ｂ，Ｇが形成されたカラーフィルタ１４が完成す
る。Then, the non-exposed portions (shadow portions of the resin patterns R and G) of the resin film 12 are removed, and as shown in FIG. 3C, the red, blue, and green colored resin patterns are formed on the surface of the support 1. The color filter 14 on which R, B and G are formed is completed.
【００３２】図４は本発明方法の第２の実施例を説明す
るための図、図５は本発明方法の第３の実施例に使用す
るレジスト膜露光用マスクの説明図、図６は本発明方法
の第４の実施例に使用するレジスト膜露光用マスクの説
明図である。FIG. 4 is a diagram for explaining a second embodiment of the method of the present invention, FIG. 5 is an explanatory diagram of a resist film exposure mask used in a third embodiment of the method of the present invention, and FIG. It is explanatory drawing of the resist film exposure mask used for the 4th Example of the method of invention.
【００３３】本発明方法の第２の実施例は、前記第１の
実施例における両性レジスト膜３の感光感度を変える、
即ちポジ型感光波長の感度とネガ型感光波長の感度が異
なる両性レジスト膜を使用することであり、かかるレジ
スト膜３１、例えば感光剤の混合比を変えてネガ型感光
波長の感度が60mj／ｃｍ2 でポジ型感光波長の感度が12
0mj／ｃｍ2 のレジスト膜３１を、図４に示す如く前出
のレジスト膜３に変えて支持体１の表面に形成し、第１
の実施例と同一工程を経てカラーフィルタ１３が完成す
る。In the second embodiment of the method of the present invention, the photosensitivity of the amphoteric resist film 3 in the first embodiment is changed.
That is, an amphoteric resist film having different sensitivities of the positive photosensitive wavelength and the negative photosensitive wavelength is used. The sensitivity of the negative photosensitive wavelength is 60 mj / cm by changing the mixing ratio of the resist film 31, for example, the photosensitizer. 2 , the sensitivity of the positive photosensitive wavelength is 12
The resist film 31 of 0 mj / cm 2 is formed on the surface of the support 1 in place of the resist film 3 described above as shown in FIG.
The color filter 13 is completed through the same steps as those in the above embodiment.
【００３４】かかるレジスト膜３１を使用したカラーフ
ィルタ１１は、前記第１の実施例のカラーフィルタ１１
に比べて露光工程における制御（管理）が容易になると
いう利点がある。The color filter 11 using the resist film 31 is the color filter 11 of the first embodiment.
Compared with, there is an advantage that control (management) in the exposure process becomes easier.
【００３５】図５において、本発明方法の第３の実施例
に使用するレジスト膜３露光用マスク４１は、ネガ型感
光波長を遮光しポジ型感光波長が透過する透光部５１
と、ポジ型感光波長を遮光しネガ型感光波長が透過する
透光部５２と、完全遮光部５３にてなる。In FIG. 5, a mask 41 for exposing the resist film 3 used in the third embodiment of the method of the present invention is a light transmitting portion 51 which blocks a negative photosensitive wavelength and transmits a positive photosensitive wavelength.
The light-transmitting portion 52 that blocks the positive photosensitive wavelength and transmits the negative photosensitive wavelength, and the complete light-shielding portion 53.
【００３６】透光部５１は前記マスク４の透光部５に対
応し、透光部５２は前記マスク６の透光部７に対応し、
マスク４１はマスク４および６の機能を兼ね備える。従
って、マスク４１を使用した第３の実施例は、１回の露
光処理で第１の実施例における第１の所定領域の露光処
理と第２の露光処理を行うことになり、カラーフィルタ
１１の製造工程が短縮される。なお、マスク４１は前記
第２の実施例におけるレジスト膜３１の露光用として使
用し、第２の実施例によるカラーフィルタ１１の製造工
程を短縮することができる。The light transmitting portion 51 corresponds to the light transmitting portion 5 of the mask 4, the light transmitting portion 52 corresponds to the light transmitting portion 7 of the mask 6,
The mask 41 also has the functions of the masks 4 and 6. Therefore, in the third embodiment using the mask 41, the exposure processing of the first predetermined region and the second exposure processing in the first embodiment are performed by one exposure processing, and the color filter 11 The manufacturing process is shortened. The mask 41 is used for exposing the resist film 31 in the second embodiment, and the manufacturing process of the color filter 11 according to the second embodiment can be shortened.
【００３７】図６において、本発明方法の第４の実施例
に使用するレジスト膜３１露光用マスク４２は、ネガ型
感光波長を遮光しポジ型感光波長が透過する透光部５４
と、ポジ型感光波長を遮光しネガ型感光波長が透過する
透光部５５と、完全遮光部５６にてなり、レジスト膜３
１にポジ型露光像に対応する透光部５４の開口数をＮと
したとき、ネガ型露光像に対応する透光部５５の開口数
は１／２・Ｎとする。In FIG. 6, the resist film 31 exposure mask 42 used in the fourth embodiment of the method of the present invention has a transparent portion 54 which blocks the negative photosensitive wavelength and transmits the positive photosensitive wavelength.
The resist film 3 includes a transparent portion 55 that blocks the positive photosensitive wavelength and transmits the negative photosensitive wavelength, and a complete light shielding portion 56.
When the numerical aperture of the transparent portion 54 corresponding to the positive exposure image is N, the numerical aperture of the transparent portion 55 corresponding to the negative exposure image is 1/2 · N.
【００３８】かかるマスク４２をレジスト膜３１の露光
工程に使用したとき、その露光工程における制御（管
理）は、単にレジスト膜３１を使用したときより一層容
易になる。When the mask 42 is used in the exposure process of the resist film 31, the control (management) in the exposure process becomes easier than when the resist film 31 is simply used.
【００３９】図７は本発明方法の第５の実施例の説明図
である。図７(a) において、ブラックマトリクス２を形
成した透光性支持体１の表面に、所望の顔料を分散させ
たポジ・ネガ型レジスト膜３２、即ち、ポジ型露光像を
形成する感光波長とネガ型露光像を形成する感光波長が
異なり、かつ、所望の顔料例えば青色顔料を分散させた
ポジ・ネガ型レジスト膜３２を、均一厚さに形成したの
ち、マスク例えば前出のマスク４２を用いてレジスト膜
３２に、ポジ型露光像αとネガ型露光像β（＝青色樹脂
パターンＢの像）と非露光像γとを形成させる。FIG. 7 is an explanatory view of the fifth embodiment of the method of the present invention. In FIG. 7 (a), a positive / negative resist film 32 in which a desired pigment is dispersed on the surface of the light-transmissive support 1 on which the black matrix 2 is formed, that is, a photosensitive wavelength for forming a positive exposure image, After forming a positive / negative type resist film 32 having a different photosensitive wavelength for forming a negative type exposure image and having a desired pigment, for example, a blue pigment dispersed therein, to a uniform thickness, a mask such as the mask 42 described above is used. As a result, a positive exposure image α, a negative exposure image β (= image of the blue resin pattern B) and a non-exposure image γ are formed on the resist film 32.
【００４０】次いで、例えば塩基性水溶液を使用した第
１回目の現像処理によって、レジスト膜３２のポジ型露
光像αを除去したのち、図７(b) に示す如くポジ型露光
像αの除去跡を埋めて赤色顔料を分散させたネガ型感光
樹脂膜８を成膜し、支持体１の裏面より樹脂膜８を感光
させると共にレジスト膜３２の非露光像γを可溶性にす
る露光処理、即ち、２００〜５００ｎｍ波長の光（紫外
線）９１を照射する。Then, the positive exposure image α of the resist film 32 is removed by the first development process using, for example, a basic aqueous solution, and then the removal trace of the positive exposure image α is removed as shown in FIG. 7B. An exposure process for forming a negative photosensitive resin film 8 in which the red pigment is dispersed by burying the above, and exposing the resin film 8 from the back surface of the support 1, and making the non-exposed image γ of the resist film 32 soluble. Light (ultraviolet ray) 91 having a wavelength of 200 to 500 nm is irradiated.
【００４１】次いで、例えば塩基性水溶液を使用した第
２回目の現像処理を施すと図７(c)に示す如く、樹脂膜
８の残部からなる赤色樹脂パターンＲと、青色樹脂パタ
ーンＢとが形成され、レジスト膜３２の非露光像γが除
去される。Next, for example, when the second development process using a basic aqueous solution is performed, a red resin pattern R and a blue resin pattern B, which are the rest of the resin film 8, are formed as shown in FIG. 7 (c). Then, the non-exposed image γ of the resist film 32 is removed.
【００４２】次いで、図７(d) に示す如く、レジスト膜
３２の非露光像γの除去跡を埋める緑色ネガ型感光樹脂
膜１０を成膜したのち、支持体１の裏面より樹脂膜１０
を感光させる波長の光（紫外線）９１を照射する。Next, as shown in FIG. 7D, a green negative photosensitive resin film 10 for filling the removal traces of the non-exposed image γ of the resist film 32 is formed, and then the resin film 10 is applied from the back surface of the support 1.
Light (ultraviolet ray) 91 having a wavelength that sensitizes is irradiated.
【００４３】次いで、例えば塩基性水溶液を使用した第
３回目の現像処理を施すと、樹脂パターンＲとＢをマス
クとして露光処理した樹脂膜１０の非感光部が除去され
て、図７(e) に示す如く支持体１の表面に赤，青，緑の
着色樹脂パターンＲ，Ｂ，Ｇが形成されたカラーフィル
タ１４が完成する。Next, for example, a third developing process using a basic aqueous solution is performed to remove the non-photosensitive part of the resin film 10 which has been exposed by using the resin patterns R and B as a mask, and FIG. As shown in FIG. 3, the color filter 14 in which the red, blue and green colored resin patterns R, B and G are formed on the surface of the support 1 is completed.
【００４４】なお、上記実施例においては無色のレジス
ト膜３，３１および有色のレジスト膜３２に、三成分系
のポジ・ネガ型レジストを使用したが、一成分系のポジ
・ネガ型レジスト、例えば露光前に加熱し２５４ｎｍ光
を照射したポジ型露光像と３００ｎｍ以上光を照射した
ネガ型露光像がメタノール水溶液がえられるメタクリロ
ニトリルとメタリック酸の重合体を用い、露光波長およ
び露光マスクを該重合体に対応させることによって、本
発明が実施可能である。In the above embodiment, the three-component positive / negative resist was used for the colorless resist films 3 and 31 and the colored resist film 32. However, a one-component positive / negative resist, for example, A positive exposure image which was heated before exposure and was irradiated with light of 254 nm and a negative exposure image which was irradiated with light of 300 nm or more were used to obtain an aqueous solution of methanol using a polymer of methacrylonitrile and metallic acid, using an exposure wavelength and an exposure mask. The present invention can be carried out by corresponding to a polymer.
【００４５】さらに、液晶表示パネルに充填した液晶の
厚さ（ギャップ）が、着色樹脂パターンの色別に異なる
ようにしたマルチギャップ・カラーフィルタは、前記実
施例において、樹脂膜８と１０と１２の厚さを違えるこ
とによって、容易に実施されるようになる。Further, the multi-gap color filter in which the thickness (gap) of the liquid crystal filled in the liquid crystal display panel is different for each color of the colored resin pattern is the resin film 8, 10 and 12 in the above-mentioned embodiment. Different thicknesses facilitate implementation.
【００４６】さらに、前記実施例において着色樹脂膜
８，１０，１２を、光透過率の低い順に形成するように
すれば、セルフアライメント精度が向上即ち着色樹脂パ
ターン精度が向上するようになる。Further, in the above-described embodiment, if the colored resin films 8, 10 and 12 are formed in the order of increasing light transmittance, the self-alignment accuracy is improved, that is, the colored resin pattern accuracy is improved.
【００４７】[0047]
【発明の効果】以上説明したように本発明方法によれ
ば、従来方法の顔料分散法および染色法により形成した
着色樹脂パターンと比較し、精度的に同等または一層の
高精度を可能とし、かつ、安価に提供できるようになっ
た。As described above, according to the method of the present invention, as compared with the colored resin pattern formed by the conventional pigment dispersion method and dyeing method, it is possible to achieve the same accuracy or higher accuracy, and , Can now be offered at a low price.
【図１】 本発明方法の基本製造工程の説明図FIG. 1 is an explanatory view of a basic manufacturing process of the method of the present invention.
【図２】 本発明方法の第１の実施例の説明図（その
１）FIG. 2 is an explanatory diagram of the first embodiment of the method of the present invention (No. 1)
【図３】 本発明方法の第１の実施例の説明図（その
２）FIG. 3 is an explanatory view of the first embodiment of the method of the present invention (No. 2)
【図４】 本発明方法の第２の実施例を説明するための
図FIG. 4 is a diagram for explaining a second embodiment of the method of the present invention.
【図５】 本発明方法の第３の実施例に使用するレジス
ト膜露光用マスクの説明図FIG. 5 is an explanatory view of a resist film exposure mask used in a third embodiment of the method of the present invention.
【図６】 本発明方法の第４の実施例に使用するレジス
ト膜露光用マスクの説明図FIG. 6 is an explanatory view of a resist film exposure mask used in a fourth embodiment of the method of the present invention.
【図７】 本発明方法の第５の実施例の説明図FIG. 7 is an explanatory diagram of a fifth embodiment of the method of the present invention.
【図８】 前記三成分系レジストの感光剤の光吸収スペ
クトルFIG. 8: Light absorption spectrum of the photosensitizer of the three-component resist
１透光性支持体 ３，３１，３２ ポジ・ネガ型レジスト膜 ４，６，４１，４２ レジスト膜露光用マスク ５，７，５１，５２，５４，５５ レジスト膜露光用マ
スクの透光部 ５３，５６ レジスト膜露光用マスクの遮光部 ８，１０，１２ ネガ型感光性着色樹脂膜 ９，１１，１３ ネガ型感光性着色樹脂膜露光用の光 Ｂ，Ｇ，Ｒ 着色樹脂パターン αポジ型露光像 β ネガ型露光像 γ 非露光像1 translucent support 3, 31, 32 positive / negative resist film 4, 6, 41, 42 resist film exposure mask 5, 7, 51, 52, 54, 55 translucent part of resist film exposure mask 53 , 56 Light-shielding portion of resist film exposure mask 8, 10, 12 Negative photosensitive colored resin film 9, 11, 13 Light for negative photosensitive colored resin film exposure B, G, R Colored resin pattern α positive exposure Image β Negative exposure image γ Non-exposure image
Claims (6)
像を形成する感光波長とネガ型露光像を形成する感光波
長が異なるポジ・ネガ型レジスト膜(3) を成膜する工程
と、 形成すべき樹脂パターンの色別に対応し、該レジスト膜
(3) にポジ型露光像（α）とネガ型露光像（β）と非露
光像（γ）を形成する第１の露光工程と、 該レジスト膜(3) のポジ型露光像（α）を除去する第１
の現像処理工程と、 該第１の現像処理により除去した該ポジ型露光像（α）
の跡を第１のネガ型感光性着色樹脂(8) で埋める成膜工
程と、 該第１のネガ型感光性着色樹脂膜(8) の感光波長と該レ
ジスト膜(3) のポジ型感光波長の光(9) を、該支持体
(1) の裏面より照射させる第２の露光工程と、 該ポジ型露光像（α）の跡に該第１のネガ型感光性着色
樹脂膜(8) にてなる第１の着色樹脂パターン（Ｒ）を形
成すると共に、該第１の露光工程時における該レジスト
膜(3) の非露光像（γ）を除去する第２の現像処理工程
と、 該第２の現像処理により除去した該非露光像（γ）の跡
を第２のネガ型感光性着色樹脂(10)で埋める成膜工程
と、 該第２のネガ型感光性着色樹脂膜(10)の感光波長と該レ
ジスト膜(3) のポジ型感光波長の光(11)を、該支持体
(1) の裏面より照射させる第３の露光工程と、 該非露光像（γ）の跡に該第２のネガ型感光性着色樹脂
膜(10)にてなる第２の着色樹脂パターン (Ｇ）を形成す
ると共に、該第１の露光工程時における該レジスト膜
(3) のネガ型露光像（β）を除去する第３の現像処理工
程と、 該第３の現像処理により除去した該ネガ型露光像（β）
の跡を第３のネガ型感光性着色樹脂(12)で埋める成膜工
程と、 該第３のネガ型感光性着色樹脂膜(12)の感光波長の光(1
3)を、該支持体(1) の裏面より照射させる第４の露光工
程と、 該ネガ型露光像（β）の跡に該第３のネガ型感光性着色
樹脂膜(12)にてなる第３の着色樹脂パターン（Ｂ）を形
成する第４の現像処理工程とを含むこと、 を特徴とするカラー樹脂パターンの形成方法。1. A positive / negative resist film (3) having a different photosensitive wavelength for forming a positive exposure image and a photosensitive wavelength for forming a negative exposure image is formed on the surface of the transparent support (1). And the resist film for each color of the resin pattern to be formed.
A first exposure step of forming a positive exposure image (α), a negative exposure image (β) and a non-exposure image (γ) on (3), and a positive exposure image (α) of the resist film (3) The first to remove
Development processing step, and the positive exposure image (α) removed by the first development processing
Film formation step of filling the traces of the first negative type photosensitive colored resin (8) with the photosensitive wavelength of the first negative type photosensitive colored resin film (8) and the positive photosensitive type of the resist film (3). A wavelength of light (9) is applied to the support
The second exposure step of irradiating from the back surface of (1), and the first colored resin pattern (which consists of the first negative photosensitive colored resin film (8) on the trace of the positive exposed image (α) ( R) and a second development treatment step of removing the non-exposed image (γ) of the resist film (3) during the first exposure step, and the non-exposure removed by the second development treatment. A film forming step of filling the traces of the image (γ) with the second negative photosensitive colored resin (10), the photosensitive wavelength of the second negative photosensitive colored resin film (10) and the resist film (3) Of the positive type photosensitive wavelength (11) of the support
Third exposure step of irradiating from the back surface of (1), and second colored resin pattern (G) comprising the second negative type photosensitive colored resin film (10) on the trace of the unexposed image (γ) And forming the resist film during the first exposure step.
Third development processing step of removing the negative exposure image (β) of (3), and the negative exposure image (β) removed by the third development processing
Film formation step of filling the traces of the third negative type photosensitive colored resin (12) with light of a photosensitive wavelength of the third negative type photosensitive colored resin film (12).
A third exposure step of irradiating 3) from the back surface of the support (1) and the third negative photosensitive colored resin film (12) on the trace of the negative exposure image (β) A fourth developing treatment step of forming a third colored resin pattern (B).
(31)に、ポジ型露光像（α）を形成する感光波長の感光
感度とネガ型露光像（β）を形成する感光波長の感光感
度とが異なる樹脂を使用すること、を特徴とするカラー
樹脂パターンの形成方法。2. The positive / negative resist film according to claim 1.
(31) A color characterized by using a resin having a different photosensitivity at a photosensitive wavelength for forming a positive exposure image (α) and a photosensitive wavelength for forming a negative exposure image (β) Method of forming resin pattern.
て、前記ポジ型露光像（α）に対応してポジ型感光波長
の光を透過しネガ型感光波長の光を遮光する第１の透光
部 (51または54) と、前記ネガ型露光像（β）に対応し
てネガ型感光波長の光を透過しポジ型感光波長の光を遮
光する第２の透光部 (52または55) と、前記非露光像
（γ）に対応する遮光部 (53または56) とを具えた１枚
のマスク(41)を使用すること、を特徴とするカラー樹脂
パターンの形成方法。3. A first exposure step according to claim 1, wherein light of a positive photosensitive wavelength is transmitted and light of a negative photosensitive wavelength is blocked corresponding to the positive exposure image (α). A light-transmitting portion (51 or 54) and a second light-transmitting portion (52 or 55) that transmits light of a negative photosensitive wavelength and blocks light of a positive photosensitive wavelength corresponding to the negative exposure image (β). ) And a light-shielding portion (53 or 56) corresponding to the non-exposed image (γ), one mask (41) is used.
型感光性着色樹脂膜(8,10,12) を、光透過率の低いもの
から第１，第２，第３とすること、を特徴とするカラー
樹脂パターンの形成方法。4. The first, second, and third negative photosensitive colored resin films (8, 10, 12) according to claim 1, wherein the first, the second, and the third have a low light transmittance. And a method of forming a color resin pattern.
像を形成する感光波長とネガ型露光像を形成する感光波
長が異なり、かつ、所望色に着色したポジ・ネガ型レジ
スト膜(32)を成膜する工程と、 形成すべき樹脂パターンの色別に対応し、該レジスト膜
(32)にポジ型露光像（α）とネガ型露光像（β）と非露
光像（γ）を形成する第１の露光工程と、 該レジスト膜(32)のポジ型露光像（α）を除去する第１
の現像処理工程と、 該第１の現像処理により除去した該ポジ型露光像（α）
の跡を第１のネガ型感光性着色樹脂(8) で埋める成膜工
程と、 該第１のネガ型感光性着色樹脂膜(8) の感光波長と該レ
ジスト膜(32)の非露光像（γ）を可溶化する光(91)を、
該支持体(1) の裏面より照射させる第２の露光工程と、 該ポジ型露光像（α）の跡に該第１のネガ型感光性着色
樹脂膜(8) にてなる第１の着色樹脂パターン（Ｒ）を形
成すると共に、該レジスト膜(32)の非露光像（γ）を除
去し、該レジスト膜(32)にてなる第２の着色樹脂パター
ン（Ｂ）を形成する第２の現像処理工程と、 該第２の現像処理により除去した該非露光像（γ）の跡
を第２のネガ型感光性着色樹脂(10)で埋める成膜工程
と、 該第２のネガ型感光性着色樹脂膜(10)の感光波長の光(9
2)を、該支持体(1) の裏面より照射させる第３の露光工
程と、 該第２のネガ型感光性着色樹脂膜(10)を現像し該非露光
像（γ）の除去跡に、該第２のネガ型感光性着色樹脂膜
(10)にてなる第３の樹脂パターン (Ｇ）を形成させるこ
と、 を特徴とするカラー樹脂パターンの形成方法。5. A positive / negative type in which a photosensitive wavelength for forming a positive exposure image and a photosensitive wavelength for forming a negative exposure image are different from each other on the surface of the transparent support (1) and which is colored in a desired color. Corresponding to the process of forming the resist film (32) and the color of the resin pattern to be formed,
A first exposure step of forming a positive exposure image (α), a negative exposure image (β) and a non-exposure image (γ) on (32), and a positive exposure image (α) of the resist film (32) The first to remove
Development processing step, and the positive exposure image (α) removed by the first development processing
Film formation step of filling the traces of the first negative photosensitive color resin (8) with the photosensitive wavelength of the first negative photosensitive color resin film (8) and the unexposed image of the resist film (32). Light (91) to solubilize (γ),
A second exposure step of irradiating from the back surface of the support (1), and a first coloration comprising the first negative type photosensitive colored resin film (8) on the trace of the positive type exposure image (α) Second, forming a resin pattern (R) and removing the non-exposed image (γ) of the resist film (32) to form a second colored resin pattern (B) of the resist film (32) Development processing step, a film formation step of filling the traces of the non-exposed image (γ) removed by the second development processing with a second negative photosensitive coloring resin (10), and the second negative photosensitive Light of the photosensitive wavelength of the colored resin film (10) (9
A second exposure step of irradiating 2) from the back surface of the support (1), and developing a second negative type photosensitive colored resin film (10) to remove traces of the non-exposed image (γ), The second negative type photosensitive colored resin film
Forming a third resin pattern (G) consisting of (10), and forming a color resin pattern.
請求項４記載の第１，第２，第３の着色樹脂パターン
（Ｒ，Ｂ，Ｇ）の厚さを所望に変えること、を特徴とす
るカラー樹脂パターンの形成方法。6. The thickness of the first, second, third or the first, second, and third colored resin patterns (R, B, G) according to claim 1 is changed as desired. A method for forming a color resin pattern, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9187694A JP3211555B2 (en) | 1994-04-28 | 1994-04-28 | Method of forming color resin pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9187694A JP3211555B2 (en) | 1994-04-28 | 1994-04-28 | Method of forming color resin pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07294724A true JPH07294724A (en) | 1995-11-10 |
| JP3211555B2 JP3211555B2 (en) | 2001-09-25 |
Family
ID=14038768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9187694A Expired - Fee Related JP3211555B2 (en) | 1994-04-28 | 1994-04-28 | Method of forming color resin pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3211555B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100902597B1 (en) * | 2007-10-04 | 2009-06-11 | 주식회사 동부하이텍 | Method for Fabricating of CMOS Image Sensor |
| JP2021530732A (en) * | 2018-07-09 | 2021-11-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | Photoresist composition for line doubling |
-
1994
- 1994-04-28 JP JP9187694A patent/JP3211555B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100902597B1 (en) * | 2007-10-04 | 2009-06-11 | 주식회사 동부하이텍 | Method for Fabricating of CMOS Image Sensor |
| JP2021530732A (en) * | 2018-07-09 | 2021-11-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | Photoresist composition for line doubling |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3211555B2 (en) | 2001-09-25 |
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