JPH0727747U - Carrier for polishing semiconductor wafers - Google Patents
Carrier for polishing semiconductor wafersInfo
- Publication number
- JPH0727747U JPH0727747U JP5619493U JP5619493U JPH0727747U JP H0727747 U JPH0727747 U JP H0727747U JP 5619493 U JP5619493 U JP 5619493U JP 5619493 U JP5619493 U JP 5619493U JP H0727747 U JPH0727747 U JP H0727747U
- Authority
- JP
- Japan
- Prior art keywords
- carrier
- polishing
- polished
- mounting hole
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
(57)【要約】
【目的】被研磨物周縁を保護するための軟質部分を可能
な限り小さくしてキャリア全体の強度アップを図ると共
に、キャリア本体と軟質材との間で所定の接合強度を得
られるようにして、被研磨物周縁のチップやクラック発
生，表面粗さの悪化を効果的に防止しながら研磨加工効
率を大幅に向上させることが可能な優れた研磨用キャリ
アを提供する。
【構成】シリコンウエハＷを嵌合い装着する装着孔２を
開設すると共に、外周に沿ってギア部３を設けたキャリ
ア本体１を硬質材料で成形する。装着孔２の内周面全長
にわたり溝加工を施し、その溝面1a上に軟質材４’をコ
ーティングして、シリコンウエハＷの周縁Ｗ1 を保護す
る保護部４を形成する。
(57) [Summary] [Purpose] The strength of the carrier as a whole is increased by making the soft part for protecting the periphery of the object to be polished as small as possible, and a predetermined bonding strength is provided between the carrier body and the soft material. As a result, an excellent polishing carrier that can significantly improve the polishing efficiency while effectively preventing the generation of chips or cracks around the object to be polished and the deterioration of the surface roughness is provided. [Structure] A carrier body 1 having a mounting hole 2 for fitting and mounting a silicon wafer W and a gear portion 3 provided along an outer periphery is molded from a hard material. Grooves are formed over the entire length of the inner peripheral surface of the mounting hole 2, and a soft material 4'is coated on the groove surface 1a to form a protective portion 4 for protecting the peripheral edge W1 of the silicon wafer W.
Description
【０００１】[0001]
この考案は半導体ウエハ等の研磨用キャリア、詳しくは、半導体シリコンウエ ハ、石英マスクなど硬脆材料からなる被研磨物を両面研磨する際に用いる研磨用 キャリアに関する。 The present invention relates to a polishing carrier such as a semiconductor wafer, and more particularly to a polishing carrier used for double-side polishing of an object to be polished made of a hard and brittle material such as a semiconductor silicon wafer and a quartz mask.
【０００２】[0002]
従来、円板状にスライスしたシリコンウエハを両面研磨する際に用いるキャリ アは、薄肉円形状の金属板外周に沿ってギア部を形成すると共に、ウエハを嵌め 込んで装着する装着孔を中心周りに複数開穿して構成されており、研磨装置の上 下両定盤間に挟むように載置し、且つ両定盤間に設けたギア輪の内周にギア部を 歯合させるをもって両定盤の回転によりギヤ輪の内周に沿って遊星回転し、これ により、装着孔内に装着したウエハの表裏両面が同時に研磨されるようになって いる。 Conventionally, a carrier used for double-sided polishing of a silicon wafer sliced into a disk shape has a gear part formed along the outer circumference of a thin circular metal plate and a mounting hole around which the wafer is fitted and mounted around the center. It is placed by sandwiching it between the upper and lower surface plates of the polishing machine, and the gears are meshed with the inner circumference of the gear wheel provided between both surface plates. The rotation of the surface plate causes a planetary rotation along the inner circumference of the gear wheel, which allows the front and back surfaces of the wafer mounted in the mounting hole to be simultaneously polished.
【０００３】 上記した従来のキャリアは金属材料により一体成形されたものなので、研磨加 工中に加わる負荷によってウエハ周縁にチップ，クラックが発生したり同周縁の 表面粗さを悪化させる恐れがあり、これを防止する必要上、キャリアを構成する 金属に比較的軟質なものを選定して使用しなければならなかった。よって従来の 研磨用キャリアは、外周ギア部の強度を十分に確保することが困難で、その結果 、研磨時における加工圧力の制限，定盤回転数の低減等、加工条件の制約が大き くなり、生産性の低下を余儀なくされていた。Since the above-mentioned conventional carrier is integrally formed of a metal material, there is a possibility that chips and cracks may be generated at the peripheral edge of the wafer or the surface roughness of the peripheral edge may be deteriorated due to the load applied during the polishing process. In order to prevent this, it was necessary to select and use a relatively soft metal for the carrier. Therefore, it is difficult for the conventional polishing carrier to secure sufficient strength of the outer peripheral gear part, and as a result, processing conditions such as restriction of processing pressure during polishing and reduction of platen rotation speed become large. , Was forced to reduce productivity.
【０００４】 このような問題を解決するために、実公平3-40535 号公報等に記載されるよう に、外周に沿ってギア部を形成した円板状のキャリア本体を金属等の硬質材で成 形すると共に、キャリア本体に開穿した孔内に軟質材からなる内蔵キャリアを装 填し、その内蔵キャリアに形成した装着孔に被研磨物を嵌合い装着するよう構成 することも考えられる。しかしながらこの場合においても、外周ギヤ部において はそれなりの強度を得られるものの、キャリア全体における強度の低下は避けら れず、上記加工条件の制約を若干改善するにとどまっていた。In order to solve such a problem, as described in Japanese Utility Model Publication No. 3-40535, a disc-shaped carrier body having a gear portion formed along the outer circumference is made of a hard material such as metal. It is conceivable that the built-in carrier made of a soft material is loaded into the hole opened in the carrier body and the object to be polished is fitted and mounted in the mounting hole formed in the built-in carrier. However, even in this case, although the peripheral gear portion can obtain a certain amount of strength, a decrease in the strength of the entire carrier is unavoidable, and the restriction on the above processing conditions is only slightly improved.
【０００５】[0005]
本考案は上述したような従来事情に鑑みてなされたものであり、その目的とす るところは、被研磨物周縁を保護するための軟質部分を可能な限り小さくしてキ ャリア全体の強度アップを図ると共に、硬質部分（キャリア本体）と軟質部分（ 被研磨物の外周保護部）との間で所定の接合強度を得られるようにして、被研磨 物周縁のチップやクラック発生，同周縁の表面粗さの悪化を効果的に防止しなが ら、研磨加工効率を大幅に向上させることが可能な優れた研磨用キャリアを提供 することにある。 The present invention has been made in view of the above conventional circumstances, and its purpose is to increase the strength of the entire carrier by making the soft portion for protecting the periphery of the object to be polished as small as possible. In addition, it is possible to obtain a predetermined bonding strength between the hard part (carrier body) and the soft part (periphery protection part of the object to be polished), so that chips and cracks on the periphery of the object to be polished, An object of the present invention is to provide an excellent polishing carrier capable of significantly improving polishing processing efficiency while effectively preventing deterioration of surface roughness.
【０００６】[0006]
以上の目的を達成するために本考案の研磨用キャリアは、被研磨物を嵌合い装 着する装着孔を備えた円板状のキャリア本体外周に沿ってギア部を設けてなる研 磨用キャリアにおいて、キャリア本体を硬質材で成形すると共に、前記装着孔の 内周面全長にわたり溝加工を施して軟質材をコーティングしたことを特徴とする 。 In order to achieve the above object, the polishing carrier of the present invention is a polishing carrier in which a gear portion is provided along the outer periphery of a disc-shaped carrier body having a mounting hole for fitting and mounting an object to be polished. In the above, the carrier body is formed of a hard material, and a groove is formed on the entire inner peripheral surface of the mounting hole to coat the carrier material with a soft material.
【０００７】[0007]
上記した手段によれば、被研磨物の周縁を保護するための軟質材からなる部分 の比率がキャリア全体の面積に対して極めて小さいものとなり、キャリア本体を 硬質材で成形してその外周ギヤ部並びにキャリア全体に所定の強度を保持させつ つ、被研磨物の周縁保護が可能になる。しかも前記保護部分は、装着孔の内周面 を溝加工した上に軟質材をコーティングして形成したので、該保護部分（軟質材 部分）とキャリア本体（硬質材部分）との間で所望な接合強度を得ることができ る。 According to the above-mentioned means, the ratio of the portion made of the soft material for protecting the peripheral edge of the object to be polished becomes extremely small with respect to the area of the entire carrier. In addition, it is possible to protect the periphery of the object to be polished while maintaining the predetermined strength in the entire carrier. Moreover, since the protective portion is formed by grooving the inner peripheral surface of the mounting hole and coating a soft material, a desired portion between the protective portion (soft material portion) and the carrier body (hard material portion) is desired. Bonding strength can be obtained.
【０００８】[0008]
【実施例】 以下、本考案に係る研磨用キャリアの一実施例を図面に基づいて説明する。 本考案が対象とする研磨用キャリアａは図１及び図２に示すように、シリコン ウエハ（被研磨物）Ｗを両面研磨する際に使用するものであって、金属等の硬質 材を用いて薄肉円板状に一体成形したキャリア本体１にシリコンウエハＷを嵌合 い装着する装着孔２を開設すると共に、キャリア本体１外周には研磨装置のギア 輪（不図示）内周に歯合させるギア部３を形成し、且つ前記装着孔２の内周縁に シリコンウエハＷの周縁Ｗ1 を保護する保護部４を形成して構成される。Embodiment An embodiment of the polishing carrier according to the present invention will be described below with reference to the drawings. As shown in FIGS. 1 and 2, the polishing carrier a targeted by the present invention is used for double-side polishing of a silicon wafer (workpiece) W, and is made of a hard material such as metal. A carrier body 1 integrally formed in a thin disk shape is provided with a mounting hole 2 for fitting and mounting a silicon wafer W, and an outer periphery of the carrier body 1 is meshed with an inner periphery of a gear wheel (not shown) of a polishing device. A gear portion 3 is formed, and a protective portion 4 for protecting the peripheral edge W1 of the silicon wafer W is formed on the inner peripheral edge of the mounting hole 2.
【０００９】 本実施例におけるキャリア本体１はＳＫ材（炭素工具鋼）を用いて一体成形す ることにより、ギア部３の強度を高めると同時に、キャリア本体１自体に所定の 強度を保持せしめている。The carrier body 1 in the present embodiment is integrally formed by using SK material (carbon tool steel) to increase the strength of the gear portion 3 and at the same time, the carrier body 1 itself retains a predetermined strength. There is.
【００１０】 シリコンウエハＷを嵌合い装着する円形の装着孔２は、キャリア本体１の中心 部周りに周方向へ等間隔をおきながら４箇所開設される。 各装着孔２の内周面にはその全長にわたって軟質材４’、例えばエポキシ等の 合成樹脂材をコーティングして、装着孔２に装着するシリコンウエハＷの周縁Ｗ 1 を保護する保護部４を形成する。Circular mounting holes 2 for fitting and mounting the silicon wafer W are provided at four locations around the center of the carrier body 1 at equal intervals in the circumferential direction. The inner peripheral surface of each mounting hole 2 is coated with a soft material 4 ′, for example, a synthetic resin material such as epoxy, over its entire length to provide a protection portion 4 for protecting the peripheral edge W 1 of the silicon wafer W mounted in the mounting hole 2. Form.
【００１１】 上記保護部４は図３ (a)〜(c) に示すように、装着孔２の内周面を溝加工し、 その溝面2a上に軟質材４’をコーティングして形成され、これにより、硬質材か らなるキャリア本体１と、軟質材４’からなる保護部４との間で所望な接合強度 が得られる。尚、本実施例においては溝面2aを粗面加工して、前記接合強度をよ り高いものにしている。As shown in FIGS. 3A to 3C, the protective portion 4 is formed by grooving the inner peripheral surface of the mounting hole 2 and coating the groove surface 2a with a soft material 4 '. As a result, a desired bonding strength can be obtained between the carrier body 1 made of a hard material and the protective portion 4 made of the soft material 4 '. In this embodiment, the groove surface 2a is roughened to increase the bonding strength.
【００１２】 上記軟質材４’をコーティングする際には、保護部４とキャリア本体１との表 裏両面が図示する如く面一状態となってシリコンウエハＷより若干薄肉なキャリ アａが構成されるよう考慮することはいうまでもない。尚、本実施例の研磨用キ ャリアａが対象とする披研磨物であるシリコンウエハＷの厚さ寸法t1は 0.2〜0. 8mm( 200〜800 μｍ）程度で、これに対するキャリア本体ａの仕上がり厚さ寸法 t2は前記厚さ寸法t1から10μｍを引いた程度、また軟質材４’をコーティングす る際の厚み、即ち保護部４の幅寸法ｈは0.5mm 程度である。When the soft material 4 ′ is coated, the front and back surfaces of the protective portion 4 and the carrier body 1 are flush with each other as shown in the figure, and a carrier a slightly thinner than the silicon wafer W is formed. It goes without saying that you should consider it. In addition, the thickness dimension t1 of the silicon wafer W, which is the object to be polished by the polishing carrier a of this embodiment, is about 0.2 to 0.8 mm (200 to 800 μm), and the finish of the carrier body a to this is The thickness t2 is about the thickness t1 minus 10 μm, and the thickness when the soft material 4'is coated, that is, the width h of the protective portion 4 is about 0.5 mm.
【００１３】 以上の様に構成した本実施例の研磨用キャリアａは、装着孔２内にシリコンウ エハＷを嵌合い装着した後、従来の研磨用キャリア同様、研磨装置の下定盤イ上 に該下定盤イの支軸ロ周りに等間隔ごとに複数載置し、且つギア部３を、装置の ギア輪（図示せず）内周、及び支軸ロと一体回転する歯車ハに噛合させた後、不 図示の上定盤を下降させ、上下両定盤で挟まれた状態で両定盤の回転に伴い前記 ギヤ輪の内周に沿って遊星回転し、これによりシリコンウエハＷの両面研磨が行 われる。In the polishing carrier a of the present embodiment configured as described above, after the silicon wafer W is fitted in the mounting hole 2 and mounted, the silicon wafer W is mounted on the lower platen a of the polishing apparatus like the conventional polishing carrier. A plurality of lower surface plates (a) were placed at regular intervals around the support shaft (b), and the gear part 3 was meshed with the inner circumference of the gear wheel (not shown) of the device and the gear c that rotates integrally with the support shaft (b). After that, the upper platen (not shown) is lowered, and while it is sandwiched between the upper and lower platens, the planetary wheels rotate along the inner circumference of the gear wheel as the two platens rotate, thereby polishing both sides of the silicon wafer W. Is performed.
【００１４】 また上記した研磨用キャリアａによれば、装着孔２に嵌合い装着されるシリコ ンウエハＷを保護部４（軟質材４’）の良好な緩衝性により保護することができ 、研磨加工中においてシリコンウエハＷの周縁Ｗ1 にチップやクラックが発生す ること、及び同周縁Ｗ1 の表面粗さの悪化を効果的に防止することができる。Further, according to the above-described polishing carrier a, the silicon wafer W fitted and mounted in the mounting hole 2 can be protected by the good cushioning property of the protective portion 4 (soft material 4 ′), and the polishing process can be performed. It is possible to effectively prevent chips and cracks from being generated in the peripheral edge W1 of the silicon wafer W and deterioration of the surface roughness of the peripheral edge W1.
【００１５】 同時に、シリコンウエハＷの周縁Ｗ1 を保護するための軟質材４’からなる部 分（保護部４）の比率がキャリアａ全体の面積に対して極めて小さいものとなり 、キャリア本体１を硬質材で成形してその外周ギヤ部３並びにキャリアａ全体に 所定の強度を保持させつつ、シリコンウエハＷの周縁保護が可能になる。しかも 前記保護部４は、装着孔２の内周面を溝加工しさらにその溝面1aに粗面加工を施 した上に軟質材４’をコーティングして形成したので、該保護部４とキャリア本 体１との間で高い接合強度を得ることができる。At the same time, the ratio of the portion (protection portion 4) made of the soft material 4 ′ for protecting the peripheral edge W1 of the silicon wafer W becomes extremely small with respect to the area of the entire carrier a, and the carrier body 1 is hardened. The peripheral edge of the silicon wafer W can be protected while the outer peripheral gear part 3 and the entire carrier a are molded with a material to maintain a predetermined strength. Moreover, since the protective portion 4 is formed by grooving the inner peripheral surface of the mounting hole 2 and further roughening the groove surface 1a and then coating the soft material 4 ', the protective portion 4 and the carrier are formed. A high bonding strength can be obtained with the main body 1.
【００１６】 よって、比較的軟質な金属材で一体成形した従来のキャリアや、硬質材からな るキャリア本体に軟質材からなる緩衝部材を装填してその緩衝部材に被研磨物を 装着するようにした従来技術（実公平3-40535 号等）を採用した場合の不具合、 即ち、キャリア本体のギヤ部を保護する上で必要としていた加工圧力，定盤回転 数等の研磨加工時の制約を一切無くすことができ、これにより、研磨加工の効率 を大幅に向上させることが可能となった。Therefore, the conventional carrier integrally molded with a relatively soft metal material or the carrier body made of a hard material is loaded with the buffer member made of the soft material, and the object to be polished is mounted on the buffer member. When using the above-mentioned conventional technology (Jikken 3-40535, etc.), that is, there are no restrictions on polishing processing such as processing pressure and surface plate rotation speed, which were necessary to protect the gear part of the carrier body. It can be eliminated, which makes it possible to greatly improve the efficiency of polishing.
【００１７】 図４に示す表は上記した本実施例の研磨用キャリアａ（コーティングキャリア ）を用いて両面を研磨したシリコンウエハＷの周縁Ｗ1 を検査した結果、図５に 示す表は比較的軟質な金属材で一体成形した従来の研磨用キャリア（ノーマルキ ャリア）を用いて両面を研磨したシリコンウエハの周縁を検査した結果を夫々示 す。The table shown in FIG. 4 is a result of inspecting the peripheral edge W1 of the silicon wafer W whose both surfaces are polished by using the polishing carrier a (coating carrier) of the present embodiment. The results of inspecting the peripheral edge of a silicon wafer whose both surfaces have been polished using a conventional polishing carrier (normal carrier) integrally molded with a different metal material are shown below.
【００１８】 夫々の表における縦軸はシリコンウエハ周縁の表面粗さ(Ra)を、横軸中のBEVE LINGはシリコンインゴットからスライスされ面取りした後の時点を、LAP は面取 り後に本実施例の研磨用キャリアａ若しくは前記従来の研磨用キャリアを用いて 研磨した後の時点を、ETCHING は研磨後に化学的な研磨を施した後の時点を、夫 々示す。 また各表中における□は面取り時のホイルを＃800 程度の比較的粗い状態とし た場合、△は同ホイルを＃1500程度の比較的密な状態とした場合を夫々表す。In each of the tables, the vertical axis represents the surface roughness (Ra) of the silicon wafer peripheral edge, BEVE LING in the horizontal axis represents the time point after chamfering by slicing from the silicon ingot, and LAP the present example after chamfering. The polishing carrier a or the conventional polishing carrier is used for polishing, and ETCHING is the time after chemical polishing is performed after polishing. Further, in each table, □ indicates that the wheel during chamfering is in a relatively rough state of about # 800, and △ indicates that the foil is in a relatively dense state of about # 1500.
【００１９】 図４及び図５に示す検査結果から、本実施例の研磨用キャリアａ（コーティン グキャリア）を用いて両面研磨した場合はウエハ周縁Ｗ1 の表面が面取り直後の 状態に維持されることが確認でき、また従来の研磨用キャリア（ノーマルキャリ ア）を用いて両面研磨した場合は同周縁Ｗ1 の表面が研磨終了時点において著し く粗面になり、その後に化学的研磨を施しても面取り直後の状態にまで回復し得 ないことが確認できた。From the inspection results shown in FIGS. 4 and 5, when the double-side polishing is performed using the polishing carrier a (coating carrier) of this embodiment, the surface of the wafer peripheral edge W1 is maintained in the state immediately after chamfering. In addition, when double-side polishing was performed using a conventional polishing carrier (normal carrier), the surface of the same peripheral edge W1 became a significantly rough surface at the end of polishing, and even if chemical polishing was performed thereafter. It was confirmed that the state immediately after chamfering could not be recovered.
【００２０】 尚、上記した実施例においては、キャリア本体１を構成する硬質材として金属 を、保護部４を構成する軟質材として合成樹脂を用いたが、本考案の趣旨によれ ば両部分１，４に用いる材質の硬軟を相対的に使い分けることが重要であって、 例えばキャリア本体１に硬質金属を使用し、保護部４に軟質金属を用いてもよい 。In the above-described embodiment, metal is used as the hard material forming the carrier body 1 and synthetic resin is used as the soft material forming the protection portion 4. However, according to the gist of the present invention, both parts 1 It is important to use hard and soft materials of the materials used for the and 4, relatively. For example, a hard metal may be used for the carrier body 1 and a soft metal may be used for the protective portion 4.
【００２１】 また、上記した研磨用キャリアはシリコンウエハ用として説明したが、本考案 の研磨用キャリアはシリコンウエハ以外の研磨加工、例えば石英マスク基材等の 硬脆材料の研磨用としても使用することができ、その場合、被研磨物を嵌合い装 着する装着孔２は上記したように円形に限る必要はなく、円形以外の孔形であっ ても良い。また上述した被研磨物，キャリア本体，保護部等に関する寸法も被研 磨物の大きさに応じて適宜に変更されるものである。Although the above-mentioned polishing carrier has been described for a silicon wafer, the polishing carrier of the present invention is also used for polishing processing other than a silicon wafer, for example, for polishing a hard and brittle material such as a quartz mask substrate. In that case, the mounting hole 2 for fitting and mounting the object to be polished is not limited to the circular shape as described above, and may be a hole shape other than the circular shape. Further, the dimensions of the above-mentioned object to be polished, the carrier body, the protective portion, etc. are appropriately changed according to the size of the object to be polished.
【００２２】[0022]
本考案は以上説明したように構成したことから、被研磨物の周縁を保護するた めの軟質材からなる保護部分をキャリア全体に対して極めて小さなものとし、キ ャリア本体は硬質材で成形して外周ギヤ部並びにキャリア全体に所定の強度を保 持させつつ、被研磨物の保護を可能とする。 Since the present invention is configured as described above, the protection portion made of a soft material for protecting the periphery of the object to be polished is made extremely small with respect to the entire carrier, and the carrier body is made of a hard material. It is possible to protect the object to be polished while maintaining a predetermined strength in the outer peripheral gear part and the entire carrier.
【００２３】 従って、装着孔に嵌合い装着される被研磨物の周縁を軟質材の保護作用により 保護して被研磨物周縁におけるチップやクラックの発生、並びに同周縁の表面粗 さの悪化を効果的に防止すると同時に、キャリア本体外周のギア部並びにキャリ ア全体に十分な強度を確保し得、しかも軟質材を装着孔の内周面に溝加工した上 にコーティングするをもって該軟質材とキャリア本体との間で大きな接合強度を 得るようにしたので、従来のキャリアが必要としていた加工圧力，定盤回転数等 の制約を無くし、研磨加工の効率を大幅に向上させることができる。Therefore, the peripheral edge of the workpiece to be fitted and fitted into the mounting hole is protected by the protective effect of the soft material, and the generation of chips or cracks on the peripheral edge of the workpiece and the deterioration of the surface roughness of the peripheral edge are effective. Of the carrier body, and at the same time, sufficient strength can be ensured for the gear part on the outer periphery of the carrier body and the entire carrier, and the soft material and the carrier body can be coated on the inner peripheral surface of the mounting hole by groove processing. Since a large joining strength is achieved between the and, it is possible to eliminate the restrictions such as the processing pressure and the number of rotations of the platen, which were required by the conventional carrier, and to greatly improve the polishing efficiency.
【図１】 本考案を実施した研磨用キャリアを示す正面
図。FIG. 1 is a front view showing a polishing carrier embodying the present invention.
【図２】 図１におけるＸ−Ｘ線に沿う拡大断面図。FIG. 2 is an enlarged cross-sectional view taken along line XX in FIG.
【図３】 保護部の成形手順を説明する要部の拡大断面
図。FIG. 3 is an enlarged cross-sectional view of a main part illustrating a procedure for forming a protective part.
【図４】 本考案キャリアにより両面研磨したウエハの
周縁粗さを示す図表。FIG. 4 is a table showing the peripheral roughness of a wafer whose both surfaces are polished by the carrier of the present invention.
【図５】 従来キャリアにより両面研磨したウエハの周
縁粗さを示す図表。FIG. 5 is a chart showing the roughness of the peripheral edge of a wafer whose both surfaces have been polished by a conventional carrier.
ａ：研磨用キャリア １：キャリア本体 ２：装着
孔 2a：溝面 ３：ギヤ部 ４：保護部 ４’：軟質材 Ｗ：シリコンウエハ（被研磨物） Ｗ1 ：ウエハ
の周縁a: polishing carrier 1: carrier body 2: mounting hole 2a: groove surface 3: gear part 4: protective part 4 ': soft material W: silicon wafer (object to be polished) W1: peripheral edge of wafer
Claims (1)
た円板状のキャリア本体外周に沿ってギア部を設けてな
る研磨用キャリアにおいて、キャリア本体を硬質材で成
形すると共に、前記装着孔の内周面全長にわたり溝加工
を施して軟質材をコーティングしたことを特徴とする半
導体ウエハ等の研磨用キャリア。1. A polishing carrier comprising a disc-shaped carrier body having a mounting hole for fitting and mounting an object to be polished, the gear body being provided along an outer periphery of the carrier body, and the carrier body is molded from a hard material. A polishing carrier for semiconductor wafers or the like, characterized by being grooved over the entire length of the inner peripheral surface of the mounting hole and coated with a soft material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5619493U JPH0727747U (en) | 1993-10-18 | 1993-10-18 | Carrier for polishing semiconductor wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5619493U JPH0727747U (en) | 1993-10-18 | 1993-10-18 | Carrier for polishing semiconductor wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0727747U true JPH0727747U (en) | 1995-05-23 |
Family
ID=13020309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5619493U Pending JPH0727747U (en) | 1993-10-18 | 1993-10-18 | Carrier for polishing semiconductor wafers |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0727747U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020005980A (en) * | 2000-07-10 | 2002-01-18 | 엔다 나오또 | Support for workpiece to be polished and method for manufacturing the same |
| WO2006001340A1 (en) * | 2004-06-23 | 2006-01-05 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Both-side polishing carrier and production method therefor |
| WO2006022445A1 (en) * | 2004-08-27 | 2006-03-02 | Showa Denko K.K. | Magnetic disk substrate and production method of magnetic disk |
| JP2010179375A (en) * | 2009-02-03 | 2010-08-19 | Sumco Corp | Grinding object carrier and manufacturing method of ground product |
| JP4605564B1 (en) * | 2009-09-28 | 2011-01-05 | 株式会社白崎製作所 | Holder for brittle thin plate polishing apparatus and method for manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS584349B2 (en) * | 1977-02-01 | 1983-01-26 | 株式会社日立製作所 | cathode ray tube display device |
| JPH0457669A (en) * | 1990-06-28 | 1992-02-25 | Furukawa Electric Co Ltd:The | Grinding and polishing method for metal disc |
| JPH05177537A (en) * | 1991-12-27 | 1993-07-20 | Toshiba Corp | Thin-sliced mono-crystal processing method |
-
1993
- 1993-10-18 JP JP5619493U patent/JPH0727747U/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS584349B2 (en) * | 1977-02-01 | 1983-01-26 | 株式会社日立製作所 | cathode ray tube display device |
| JPH0457669A (en) * | 1990-06-28 | 1992-02-25 | Furukawa Electric Co Ltd:The | Grinding and polishing method for metal disc |
| JPH05177537A (en) * | 1991-12-27 | 1993-07-20 | Toshiba Corp | Thin-sliced mono-crystal processing method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020005980A (en) * | 2000-07-10 | 2002-01-18 | 엔다 나오또 | Support for workpiece to be polished and method for manufacturing the same |
| WO2006001340A1 (en) * | 2004-06-23 | 2006-01-05 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Both-side polishing carrier and production method therefor |
| DE112005001447B4 (en) * | 2004-06-23 | 2019-12-05 | Komatsu Denshi Kinzoku K.K. | Double side polishing carrier and manufacturing method thereof |
| WO2006022445A1 (en) * | 2004-08-27 | 2006-03-02 | Showa Denko K.K. | Magnetic disk substrate and production method of magnetic disk |
| JP2010179375A (en) * | 2009-02-03 | 2010-08-19 | Sumco Corp | Grinding object carrier and manufacturing method of ground product |
| JP4605564B1 (en) * | 2009-09-28 | 2011-01-05 | 株式会社白崎製作所 | Holder for brittle thin plate polishing apparatus and method for manufacturing the same |
| JP2011067918A (en) * | 2009-09-28 | 2011-04-07 | Shirasaki Seisakusho:Kk | Holder for brittle thin plate-polishing device, and method of manufacturing the same |
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