JPH07257987A - Graphite member for semiconductor single crystal pulling up device and semiconductor single crystal pulling up device - Google Patents
Graphite member for semiconductor single crystal pulling up device and semiconductor single crystal pulling up deviceInfo
- Publication number
- JPH07257987A JPH07257987A JP7250894A JP7250894A JPH07257987A JP H07257987 A JPH07257987 A JP H07257987A JP 7250894 A JP7250894 A JP 7250894A JP 7250894 A JP7250894 A JP 7250894A JP H07257987 A JPH07257987 A JP H07257987A
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- Japan
- Prior art keywords
- single crystal
- graphite
- silicon
- crystal pulling
- semiconductor single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体単結晶引上げ装置
用黒鉛部材に関し、さらに詳しくはチョクラルスキー法
によりシリコン、ガリウム砒素、インジウムリンなどの
単結晶を引き上げる際に使用する炭化ケイ素もしくは窒
化ケイ素あるいはこれらを含有するセラミックで被覆し
た黒鉛部材およびこれを配設した単結晶引上げ装置に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a graphite member for a semiconductor single crystal pulling apparatus, and more specifically to silicon carbide or silicon nitride used for pulling a single crystal of silicon, gallium arsenide, indium phosphide, etc. by the Czochralski method. Alternatively, the present invention relates to a graphite member coated with a ceramic containing these and a single crystal pulling apparatus provided with the graphite member.
【0002】[0002]
【従来の技術】半導体用シリコン単結晶引上げ法の最も
代表的なものの一つとして、チョクラルスキー法による
シリコン単結晶の引上がある。この方法では、例えば図
1に示した様な真空装置を用い、支持台11上の黒鉛る
つぼ12内に収容した石英るつぼ13内に多結晶シリコ
ン14を収容し、装置内を不活性ガス雰囲気とした後、
黒鉛るつぼ12の外周に配置した黒鉛発熱体15によっ
て、多結晶シリコン14を融解させ、このシリコン融液
にシリコン種結晶16を浸し、これを回転させつつ上方
に引き上げることにより種結晶16下端に単結晶シリコ
ン17が製造される。2. Description of the Related Art One of the most typical methods for pulling a silicon single crystal for semiconductors is pulling a silicon single crystal by the Czochralski method. In this method, for example, a vacuum device as shown in FIG. 1 is used, polycrystalline silicon 14 is housed in a quartz crucible 13 housed in a graphite crucible 12 on a support 11, and an inert gas atmosphere is created inside the device. After doing
The graphite heating element 15 arranged on the outer periphery of the graphite crucible 12 melts the polycrystalline silicon 14, soaks the silicon seed crystal 16 in the silicon melt, and pulls the silicon seed crystal 16 upward while rotating it to form a single crystal at the lower end of the seed crystal 16. Crystalline silicon 17 is manufactured.
【0003】シリコン単結晶引上げ装置内には、高温度
雰囲気に耐え得る材料として黒鉛部材が種々使用され
る。しかし、一般的に引上げ装置に用いられる黒鉛部材
は多孔質であるため、表面の気孔内には加工時に発生し
た黒鉛粉が残留しており、この黒鉛粉は黒鉛部材より容
易に離脱し、シリコン融液内に混入する。シリコン融液
内に混入した黒鉛粉はシリコン単結晶の結晶欠陥を誘発
するだけでなく、黒鉛粉内には各種の金属を微量に含ん
でいるため、半導体の電気特性をも大きく変化させてし
まうことになる。In the silicon single crystal pulling apparatus, various graphite members are used as materials capable of withstanding a high temperature atmosphere. However, since the graphite member used in the pulling device is generally porous, graphite powder generated during processing remains in the pores on the surface, and this graphite powder easily separates from the graphite member and Mix in the melt. The graphite powder mixed in the silicon melt not only induces crystal defects in the silicon single crystal, but also contains a small amount of various metals in the graphite powder, which greatly changes the electrical characteristics of the semiconductor. It will be.
【0004】また、最近では引き上げられるシリコン単
結晶の大口径化が著しく、それに伴い石英るつぼの中に
一度に充填する多結晶シリコン量が増え、溶解に大きな
電力を必要とするため、黒鉛発熱体の発熱量を大きく
し、発熱温度を高める必要がある。そのため、黒鉛部材
の温度が高くなり、高温化した黒鉛部材は、シリコン融
液から蒸発する一酸化ケイ素と反応し易いため、消耗劣
化が激しく、その使用回数が短くなるという問題があっ
た。Further, recently, the diameter of the pulled silicon single crystal has been remarkably increased, and accordingly, the amount of polycrystalline silicon to be filled in a quartz crucible at one time has increased, and a large amount of electric power is required for melting. It is necessary to increase the calorific value of and to raise the exothermic temperature. Therefore, the temperature of the graphite member becomes high, and the graphite member which has been heated to a high temperature easily reacts with silicon monoxide evaporated from the silicon melt, resulting in severe wear and deterioration, and there is a problem that the number of times of use thereof is shortened.
【0005】そこで黒鉛部材の表面を保護するため、化
学蒸着法やケイ化反応により黒鉛部材を炭化ケイ素もし
くは窒化ケイ素あるいはこれらを含有するセラミックで
被覆することが行われている。Therefore, in order to protect the surface of the graphite member, the graphite member is coated with silicon carbide or silicon nitride or a ceramic containing them by a chemical vapor deposition method or a silicidation reaction.
【0006】[0006]
【発明が解決しようとする課題】ところが、炭化ケイ素
もしくは窒化ケイ素あるいはこれらを含有するセラミッ
クで被覆した黒鉛部材を引上げ装置内で使用すると、黒
鉛部材の寿命延長および高品質のシリコン単結晶が得ら
れる反面、引上げ装置内の真空引きの際、装置内が真空
に到達する時間が長くなり、単結晶の生産効率を落とす
という問題があった。その原因を追及すべく、本発明者
らが鋭意検討した結果、真空到達時間が長くなる原因は
炭化ケイ素被覆層等に吸着した気体が徐々に脱離するこ
とによるのではなく、炭化ケイ素被覆層等を透過して黒
鉛基体が吸蔵している気体が長時間に亘り徐々に脱離す
るためであることを見い出した。However, when a graphite member coated with silicon carbide or silicon nitride or a ceramic containing these is used in a pulling apparatus, the life of the graphite member is extended and a high-quality silicon single crystal is obtained. On the other hand, when the inside of the pulling apparatus is evacuated, there is a problem that the time required for the inside of the apparatus to reach a vacuum becomes long and the production efficiency of the single crystal is reduced. As a result of intensive investigations by the present inventors to investigate the cause, the reason why the vacuum arrival time is long is not due to the gradual desorption of the gas adsorbed to the silicon carbide coating layer or the like, but to the silicon carbide coating layer. It was found that the gas occluded by the graphite substrate after permeating through the above was gradually desorbed over a long period of time.
【0007】[0007]
【課題を解決するための手段】そこで、本発明者らはこ
の真空到達時間が長くなる問題が、黒鉛部材を被覆して
いる炭化ケイ素もしくは窒化ケイ素あるいはこれらを含
有するセラミックの層を一部取り除き、黒鉛基体を所定
割合、即ち黒鉛部材1cm3あたり0.03cm2以上、0.
96cm2以下の割合で露出させることにより解決するこ
とを見い出し、本発明を完成するに至った。この黒鉛基
体の露出面積は、黒鉛部材の形や大きさの違いに関係な
く適用することができる。即ち、気体を吸蔵している黒
鉛基体の単位体積当り所定割合以上の露出表面を確保す
ることにより、シリコン単結晶引上げ装置内の真空引き
の際に吸蔵気体が一気に放出され、真空到達時間を炭化
ケイ素等で被覆していない黒鉛部材とほぼ同等にするこ
とができる。なお、上記の真空到達に長時間を要する問
題は、炭化ケイ素被覆層等を例えば80μm以上と厚く
し、且つ黒鉛基体を全表面に亘って完全に被覆して吸蔵
気体の放出を抑止することによっても解決するが、炭化
ケイ素被覆等のコストが高くなることや、黒鉛基体の吸
蔵気体が放出されないため、黒鉛基体の温度が上昇する
に連れ、炭化ケイ素等の被覆内部の内圧が上昇し、炭化
ケイ素被覆層等の剥離あるいは破損を生じる恐れがある
ことなどから、上記の露出表面を設けることよりも実際
的に有利とはいえない。また、シリコン単結晶引上げ装
置で使用する黒鉛基体の露出面積を黒鉛基体の単位体積
当り、所定割合以下の露出表面とすることにより、黒鉛
基体から溶融液への炭素混入が低減し、引上げられるシ
リコン単結晶中の不純物濃度を炭化ケイ素等で全表面を
被覆した黒鉛部材を使用した場合のシリコン単結晶中の
不純物濃度とほぼ同等にすることができる。なお、炭化
ケイ素等の被覆層の厚みは、20〜200μm、更には
40〜150μmであることが好ましい。厚みが20μ
m未満であると被覆の効果が不充分となり、200μm
を超えると被覆効果の一層の向上が望めず、コスト高と
なる。SUMMARY OF THE INVENTION Therefore, the inventors of the present invention have a problem that this vacuum reaching time becomes long because a part of the silicon carbide or silicon nitride coating the graphite member or the ceramic layer containing them is removed. , A predetermined ratio of the graphite substrate, that is, 0.03 cm 2 or more per 1 cm 3 of the graphite member,
The inventors have found that the problem can be solved by exposing at a ratio of 96 cm 2 or less, and completed the present invention. The exposed area of the graphite substrate can be applied regardless of the difference in shape and size of the graphite member. That is, by ensuring an exposed surface of a predetermined volume or more per unit volume of a graphite substrate that is occluding gas, the occluded gas is released all at once when the silicon single crystal pulling device is evacuated, and the vacuum arrival time is carbonized. It can be made almost equivalent to a graphite member not covered with silicon or the like. The problem that it takes a long time to reach the vacuum is that the silicon carbide coating layer or the like is thickened to, for example, 80 μm or more, and the graphite substrate is completely covered over the entire surface to suppress the release of the occluded gas. However, since the cost of coating silicon carbide increases and the stored gas in the graphite substrate is not released, the internal pressure inside the coating of silicon carbide rises as the temperature of the graphite substrate rises. Since the silicon coating layer or the like may be peeled off or damaged, it is practically less advantageous than providing the exposed surface. Further, by setting the exposed area of the graphite base used in the silicon single crystal pulling apparatus to an exposed surface of a predetermined ratio or less per unit volume of the graphite base, carbon incorporation from the graphite base into the melt is reduced, and the silicon to be pulled up is reduced. The impurity concentration in the single crystal can be made almost equal to the impurity concentration in the silicon single crystal when a graphite member whose entire surface is coated with silicon carbide or the like is used. The thickness of the coating layer of silicon carbide or the like is preferably 20 to 200 μm, more preferably 40 to 150 μm. 20μ thick
If it is less than m, the effect of coating becomes insufficient, and 200 μm
If it exceeds, it is not possible to expect further improvement of the covering effect and the cost becomes high.
【0008】本発明において使用する炭化ケイ素もしく
は窒化ケイ素を含有するセラミックとは、炭化ケイ素や
窒化ケイ素の合成反応の原料や副産物を含む混合物や、
金属単体、金属酸化物などを積極的に添加した混合物な
ど、炭化ケイ素もしくは窒化ケイ素を主成分とするセラ
ミックを意味する。The ceramic containing silicon carbide or silicon nitride used in the present invention is a mixture containing raw materials or by-products of the synthesis reaction of silicon carbide or silicon nitride,
It refers to a ceramic containing silicon carbide or silicon nitride as a main component, such as a simple metal or a mixture in which a metal oxide is positively added.
【0009】[0009]
【作用】本発明は、例えばるつぼ12、保温用部材1
8、断熱部材、熱遮蔽部材19、るつぼ支持部材11、
スペーサー、締結部材、気体封止用部材21などシリコ
ン単結晶引上げ装置用のあらゆる黒鉛部材に適用するこ
とができ、特にるつぼ上方に位置する黒鉛部材に本発明
を適用することがより好ましい。本発明によれば、引上
げ装置内の真空引きの際に黒鉛基体内に吸蔵されている
気体が一気に放出され、真空到達時間を、炭化ケイ素等
で被覆していない黒鉛部材を用いた場合とほぼ同等とす
ることができ、シリコン単結晶の生産効率を高めること
ができる。しかも、黒鉛部材の寿命延長および高品質の
シリコン単結晶を得ることができる。In the present invention, for example, the crucible 12 and the heat insulating member 1 are provided.
8, heat insulating member, heat shield member 19, crucible support member 11,
The present invention can be applied to any graphite member for a silicon single crystal pulling device such as a spacer, a fastening member, and a gas sealing member 21, and it is more preferable to apply the present invention to a graphite member located above a crucible. According to the present invention, the gas occluded in the graphite substrate is released all at once during the evacuation of the pulling device, and the vacuum arrival time is almost the same as when the graphite member not coated with silicon carbide or the like is used. They can be made equivalent, and the production efficiency of silicon single crystals can be improved. Moreover, it is possible to extend the life of the graphite member and obtain a high-quality silicon single crystal.
【0010】[0010]
【実施例】冷間等方圧加圧成形を経て製造した高純度等
方性黒鉛部材に、化学蒸着法により炭化ケイ素を被覆し
た図1のるつぼ12、支持台11、保温用部材18、熱
遮蔽部材19、気体封止用部材21などの各種シリコン
単結晶引上げ装置用黒鉛部材を、実際にシリコン単結晶
引上げ装置内にそれぞれ使用した時(引上装置容積:4
00リットル、真空到達度:133.3Pa、排気効
率:3000リットル/分、引上装置内温度:室温)の
真空到達時間の結果を表1に、それぞれの黒鉛部材の使
用耐用回数の結果を表2に示した。EXAMPLE A high-purity isotropic graphite member manufactured through cold isostatic pressing was coated with silicon carbide by a chemical vapor deposition method, a crucible 12, a support 11, a heat retaining member 18, and a heat insulating member shown in FIG. When various graphite members for a silicon single crystal pulling device such as the shielding member 19 and the gas sealing member 21 are actually used in the silicon single crystal pulling device (pulling device volume: 4
Table 1 shows the results of the vacuum arrival time of 00 liters, vacuum reachability: 133.3 Pa, evacuation efficiency: 3000 liters / minute, and temperature inside the pulling device: room temperature. Table 1 shows the results of the service life times of each graphite member. Shown in 2.
【0011】[0011]
【表1】 [Table 1]
【0012】[0012]
【表2】 [Table 2]
【0013】炭化ケイ素を被覆し一部黒鉛基体を露出さ
せた黒鉛部材を使用した場合、炭化ケイ素を被覆してい
ない黒鉛部材と同等のレベルの真空到達時間が得られる
ことが表1から明らかであり、表2からは本発明の黒鉛
部材の使用耐用回数が、炭化ケイ素を全面に被覆した黒
鉛部材と同等のレベルであることが分かる。It is clear from Table 1 that when a graphite member coated with silicon carbide and a part of the graphite substrate is exposed, a vacuum arrival time of the same level as that of the graphite member not coated with silicon carbide can be obtained. Therefore, it can be seen from Table 2 that the service life of the graphite member of the present invention is at a level equivalent to that of the graphite member having the entire surface coated with silicon carbide.
【0014】図2のグラフは厚み40μmの炭化ケイ素
を被覆した黒鉛基体の露出割合を種々変化させた場合の
シリコン単結晶中の不純物濃度を測定した結果であり、
この図から明らかなように露出割合が0.96cm2/cm3
を超えると、得られるシリコン単結晶中の炭素濃度が著
しく増大し、重金属不純物濃度も増大することが分か
る。The graph of FIG. 2 is the result of measuring the impurity concentration in the silicon single crystal when the exposure ratio of the graphite substrate coated with silicon carbide having a thickness of 40 μm was variously changed.
As is clear from this figure, the exposure ratio is 0.96 cm 2 / cm 3
It can be seen that when it exceeds, the carbon concentration in the obtained silicon single crystal remarkably increases and the concentration of heavy metal impurities also increases.
【0015】このように、本発明で規定する黒鉛基体の
露出面積の割合が0.03cm2/cm3以上で、かつ0.9
6cm2/cm3以下である理由は、0.03cm2/cm3より小
さいとシリコン単結晶引上げ装置内の真空到達時間が長
くなりシリコン単結晶の生産効率を低下させるからであ
り、0.96cm2/cm3を超えると得られるシリコン単結
晶の品質に悪影響を及ぼすからである。Thus, the ratio of the exposed area of the graphite substrate specified in the present invention is 0.03 cm 2 / cm 3 or more, and 0.9
The reason why it is 6 cm 2 / cm 3 or less is that if it is smaller than 0.03 cm 2 / cm 3 , the vacuum reaching time in the silicon single crystal pulling apparatus becomes long and the production efficiency of the silicon single crystal is lowered. This is because if it exceeds 2 / cm 3 , the quality of the obtained silicon single crystal is adversely affected.
【0016】なお、窒化ケイ素で被覆した黒鉛部材につ
いても同様に実験を行ったところ、炭化ケイ素の場合と
同等の単結晶が得られた。When a graphite member coated with silicon nitride was subjected to the same experiment, a single crystal equivalent to the case of silicon carbide was obtained.
【0017】[0017]
【発明の効果】本発明によれば、黒鉛基体を炭化ケイ素
等で被覆してなるシリコン単結晶引上げ装置用の黒鉛部
材において、黒鉛基体を所定割合の面積で露出させるこ
とにより、引上げ装置内の真空引きの際に黒鉛基体内に
吸蔵されている気体が一気に放出され、真空到達時間
を、炭化ケイ素等で被覆していない黒鉛部材を用いた場
合とほぼ同等とすることができ、シリコン単結晶の生産
効率を高めることができる。しかも、黒鉛部材の寿命延
長および高品質のシリコン単結晶を得ることができる。According to the present invention, in a graphite member for a silicon single crystal pulling apparatus, which is obtained by coating a graphite base with silicon carbide or the like, by exposing the graphite base in a predetermined area, The gas occluded in the graphite substrate is released at once at the time of evacuation, and the time to reach the vacuum can be made almost the same as when using a graphite member not coated with silicon carbide or the like. Can improve the production efficiency. Moreover, it is possible to extend the life of the graphite member and obtain a high-quality silicon single crystal.
【図1】シリコン単結晶引上げ装置の1例を示した模式
図である。FIG. 1 is a schematic view showing an example of a silicon single crystal pulling apparatus.
【図2】シリコン単結晶中の不純物濃度の測定結果を示
したグラフである。FIG. 2 is a graph showing measurement results of impurity concentration in a silicon single crystal.
11 るつぼ支持台 12 黒鉛るつぼ 13 石英るつぼ 14 多結晶シリコン 15 黒鉛発熱体 16 種結晶 17 単結晶シリコン 18 保温用部材 19 熱遮蔽部材 20 回転軸 21 気体封止用部材 11 Crucible Support 12 Graphite Crucible 13 Quartz Crucible 14 Polycrystalline Silicon 15 Graphite Heating Element 16 Seed Crystal 17 Single Crystal Silicon 18 Heat Insulation Member 19 Heat Shielding Member 20 Rotating Shaft 21 Gas Sealing Member
───────────────────────────────────────────────────── フロントページの続き (72)発明者 木崎 信吾 兵庫県尼崎市東浜町1番地 住友シチック ス株式会社内 (72)発明者 平野 博之 香川県三豊郡大野原町大字中姫2181−2 (72)発明者 吉本 修 香川県三豊郡大野原町大字中姫2181−2 ─────────────────────────────────────────────────── --- Continuation of the front page (72) Shingo Kizaki Inventor Shingo Kizaki 1 Higashihama-cho, Amagasaki City, Hyogo Sumitomo Cix Co., Ltd. Person Osamu Yoshimoto 2181-2 Nakahime, Onohara Town, Mitoyo-gun, Kagawa Prefecture
Claims (4)
あるいはこれらを含有するセラミックで被覆してなる半
導体単結晶引上げ装置用黒鉛部材であって、前記部材1
cm3あたり0.03cm2以上、0.96cm2以下の割合で
黒鉛基体が露出していることを特徴とする半導体単結晶
引上げ装置用黒鉛部材。1. A graphite member for a semiconductor single crystal pulling apparatus, comprising a graphite substrate coated with silicon carbide, silicon nitride, or a ceramic containing them.
cm 3 per 0.03 cm 2 or more, wherein the graphite substrate is exposed at a rate of 0.96 cm 2 or less semiconductor single crystal pulling apparatus for a graphite member.
あるいはこれらを含有するセラミックで被覆し、1cm3
あたり0.03cm2以上、0.96cm2以下の割合で黒鉛
基体が露出している黒鉛部材を半導体単結晶引上げ装置
内部に配設したことを特徴とする半導体単結晶引上げ装
置。2. A graphite substrate is coated with silicon carbide or silicon nitride or a ceramic containing them, and 1 cm 3
A semiconductor single crystal pulling apparatus, wherein a graphite member having a graphite substrate exposed at a rate of 0.03 cm 2 or more and 0.96 cm 2 or less is disposed inside the semiconductor single crystal pulling apparatus.
請求項1に記載の半導体単結晶引上げ装置用黒鉛部材。3. The graphite member for a semiconductor single crystal pulling apparatus according to claim 1, wherein the semiconductor single crystal is a silicon single crystal.
請求項2に記載の半導体単結晶引上げ装置。4. The semiconductor single crystal pulling apparatus according to claim 2, wherein the semiconductor single crystal is a silicon single crystal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7250894A JP2741164B2 (en) | 1994-03-16 | 1994-03-16 | Graphite member for semiconductor single crystal pulling device and semiconductor single crystal pulling device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7250894A JP2741164B2 (en) | 1994-03-16 | 1994-03-16 | Graphite member for semiconductor single crystal pulling device and semiconductor single crystal pulling device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07257987A true JPH07257987A (en) | 1995-10-09 |
JP2741164B2 JP2741164B2 (en) | 1998-04-15 |
Family
ID=13491361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP7250894A Expired - Fee Related JP2741164B2 (en) | 1994-03-16 | 1994-03-16 | Graphite member for semiconductor single crystal pulling device and semiconductor single crystal pulling device |
Country Status (1)
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Cited By (9)
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WO1999066108A1 (en) * | 1998-06-15 | 1999-12-23 | Memc Electronic Materials, Inc. | Process and apparatus for preparation of silicon crystals with reduced metal content |
JP2000319098A (en) * | 1999-04-28 | 2000-11-21 | Showa Denko Kk | Method and apparatus for producing silicon carbide single crystal |
JP2000319080A (en) * | 1999-05-07 | 2000-11-21 | Tokai Carbon Co Ltd | Graphite member coated with silicon carbide |
WO2001081661A1 (en) * | 2000-04-25 | 2001-11-01 | Shin-Etsu Handotai Co.,Ltd. | Silicon single-crystal wafer, method for producing silicon single crystal, and method for fabricating silicon single-crystal wafer |
WO2002057518A3 (en) * | 2000-12-26 | 2003-04-17 | Memc Electronic Materials | Apparatus and process for the preparation of low-iron_contamination single crystal silicon |
WO2004044275A3 (en) * | 2002-11-12 | 2004-08-05 | Memc Electronic Materials | Process for removing metallic impurities from silicon carbide coated components of a silicon single crystal pulling apparatus |
JP2010236717A (en) * | 2009-03-30 | 2010-10-21 | Ube Ind Ltd | Crucible and method for manufacturing the same, and method for manufacturing silicon nitride powder using the same |
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JP2016199419A (en) * | 2015-04-09 | 2016-12-01 | 信越化学工業株式会社 | Coated graphite member |
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Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
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WO1999066108A1 (en) * | 1998-06-15 | 1999-12-23 | Memc Electronic Materials, Inc. | Process and apparatus for preparation of silicon crystals with reduced metal content |
US6183553B1 (en) | 1998-06-15 | 2001-02-06 | Memc Electronic Materials, Inc. | Process and apparatus for preparation of silicon crystals with reduced metal content |
JP4683725B2 (en) * | 1998-06-15 | 2011-05-18 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Process and apparatus for preparing silicon crystals with reduced metal content |
JP2002518286A (en) * | 1998-06-15 | 2002-06-25 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Process and apparatus for conditioning silicon crystals with reduced metal content |
JP2000319098A (en) * | 1999-04-28 | 2000-11-21 | Showa Denko Kk | Method and apparatus for producing silicon carbide single crystal |
JP2000319080A (en) * | 1999-05-07 | 2000-11-21 | Tokai Carbon Co Ltd | Graphite member coated with silicon carbide |
JP4096557B2 (en) * | 2000-04-25 | 2008-06-04 | 信越半導体株式会社 | Silicon single crystal wafer, silicon single crystal manufacturing method, and silicon single crystal wafer manufacturing method |
WO2001081661A1 (en) * | 2000-04-25 | 2001-11-01 | Shin-Etsu Handotai Co.,Ltd. | Silicon single-crystal wafer, method for producing silicon single crystal, and method for fabricating silicon single-crystal wafer |
JP2004521056A (en) * | 2000-12-26 | 2004-07-15 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Method and apparatus for producing single crystal silicon having a low iron concentration substantially free of aggregated intrinsic point defects |
WO2002057518A3 (en) * | 2000-12-26 | 2003-04-17 | Memc Electronic Materials | Apparatus and process for the preparation of low-iron_contamination single crystal silicon |
WO2004044275A3 (en) * | 2002-11-12 | 2004-08-05 | Memc Electronic Materials | Process for removing metallic impurities from silicon carbide coated components of a silicon single crystal pulling apparatus |
JP2010236717A (en) * | 2009-03-30 | 2010-10-21 | Ube Ind Ltd | Crucible and method for manufacturing the same, and method for manufacturing silicon nitride powder using the same |
JP2016199419A (en) * | 2015-04-09 | 2016-12-01 | 信越化学工業株式会社 | Coated graphite member |
CN104975341A (en) * | 2015-06-24 | 2015-10-14 | 吴倩颖 | Method for increasing batch feeding amount for single crystal pulling |
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