JPH07249604A - Washing method and washing equipment - Google Patents
Washing method and washing equipmentInfo
- Publication number
- JPH07249604A JPH07249604A JP3804194A JP3804194A JPH07249604A JP H07249604 A JPH07249604 A JP H07249604A JP 3804194 A JP3804194 A JP 3804194A JP 3804194 A JP3804194 A JP 3804194A JP H07249604 A JPH07249604 A JP H07249604A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- cleaning liquid
- washing
- semiconductor wafer
- holding means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、被洗浄物を洗浄液に浸
漬して洗浄する洗浄方法及び洗浄装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method and a cleaning apparatus for cleaning an object to be cleaned by immersing it in a cleaning liquid.
【０００２】[0002]
【従来の技術】従来、保持手段に装着した被洗浄物を保
持手段と共に洗浄槽内の洗浄液に浸漬し洗浄する洗浄装
置が知られている。このような洗浄装置として、例え
ば、キャリアに格納した半導体ウエーハ（被洗浄物）を
洗浄槽に配置した後、洗浄槽を純水等の洗浄液で満たし
て半導体ウエーハを浸漬状態とし、その後、洗浄液を洗
浄槽から排出することにより、半導体ウエーハを洗浄す
る半導体ウエーハ洗浄装置がある。なお、洗浄液で満た
した洗浄槽に半導体ウエーハを沈めて浸漬状態としても
良い。2. Description of the Related Art Conventionally, there has been known a cleaning apparatus for cleaning an object to be cleaned mounted on a holding means together with the holding means by immersing it in a cleaning liquid in a cleaning tank. As such a cleaning device, for example, a semiconductor wafer (object to be cleaned) stored in a carrier is placed in a cleaning tank, and then the cleaning tank is filled with a cleaning liquid such as pure water so that the semiconductor wafer is immersed in the cleaning liquid. There is a semiconductor wafer cleaning device that cleans a semiconductor wafer by discharging it from a cleaning tank. The semiconductor wafer may be immersed in a cleaning tank filled with a cleaning liquid so that the semiconductor wafer is immersed.
【０００３】図３に示すように、半導体ウエーハ洗浄装
置１は、筒体の底面開口を底板により塞いだカップ状の
洗浄槽２を有しており、洗浄槽２には、上端近傍まで洗
浄液Ｌが溜められている。洗浄槽２の底板のほぼ中央に
は、排液通路３に連通する排出口４が形成されており、
排液通路３には、排液弁５が取り付けられている。この
排液弁５の開閉により、洗浄槽２から洗浄液Ｌを排出し
或は洗浄槽２に洗浄液Ｌを溜めることができる。As shown in FIG. 3, the semiconductor wafer cleaning apparatus 1 has a cup-shaped cleaning tank 2 in which the bottom opening of the cylindrical body is closed by a bottom plate. Is stored. A discharge port 4 communicating with the drainage passage 3 is formed substantially in the center of the bottom plate of the cleaning tank 2.
A drain valve 5 is attached to the drain passage 3. By opening and closing the drainage valve 5, the cleaning liquid L can be discharged from the cleaning tank 2 or the cleaning liquid L can be stored in the cleaning tank 2.
【０００４】洗浄に際しては、半導体ウエーハ６を、キ
ャリア（図示せず）のウエーハ支持部（保持手段）７に
形成された保持溝８に周縁を入り込ませた縦置き状態で
キャリアに保持し、この状態で洗浄槽２内に配置し、排
液弁５を閉じて洗浄槽２内に洗浄液Ｌを貯めた後、キャ
リア毎洗浄液Ｌ内に浸漬する。浸漬後、排液弁５を開い
て洗浄槽２内の洗浄液Ｌを排出口４から排液通路３へと
排出する。For cleaning, the semiconductor wafer 6 is held by the carrier in a vertically installed state in which a peripheral edge is inserted into a holding groove 8 formed in a wafer supporting portion (holding means) 7 of a carrier (not shown). The cleaning liquid L is placed in the cleaning tank 2 in this state, the drain valve 5 is closed to store the cleaning liquid L in the cleaning tank 2, and then the carrier is immersed in the cleaning liquid L. After the immersion, the drainage valve 5 is opened and the cleaning fluid L in the cleaning tank 2 is drained from the drainage port 4 to the drainage passage 3.
【０００５】この後、洗浄液Ｌの供給及び排出を複数回
繰り返して、半導体ウエーハ６の洗浄を行う。After that, the supply and discharge of the cleaning liquid L are repeated a plurality of times to clean the semiconductor wafer 6.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、半導体
ウエーハ６の保持溝８には洗浄に際し生ずるゴミが溜ま
り易く、洗浄液Ｌを排出しても十分に取り除くことがで
きないことから、洗浄後の半導体ウエーハ６の薬液処理
等の際に、保持溝８に残ったゴミが半導体ウエーハ６の
表面に再付着してしまい、その結果製品の歩留まり低下
をもたらすという問題点があった。However, since the dust generated during cleaning tends to accumulate in the holding groove 8 of the semiconductor wafer 6 and the cleaning liquid L cannot be sufficiently removed even after being discharged, the semiconductor wafer 6 after cleaning can be removed. The dust remaining in the holding groove 8 is redeposited on the surface of the semiconductor wafer 6 during the chemical solution treatment, etc., and as a result, the yield of the product is reduced.
【０００７】とりわけ、近年の半導体の集積度アップに
伴い、洗浄能力の向上が要求されている半導体ウエーハ
洗浄装置においては、このような問題点は看過できない
ものであった。本発明は、上記問題点に鑑みてなされた
ものであり、その目的は、被洗浄物の洗浄に際し生ずる
ゴミを確実に取り除くことにより、洗浄後の被洗浄物に
ゴミが再付着することがない洗浄方法及び洗浄装置を提
供することにある。In particular, such problems cannot be overlooked in the semiconductor wafer cleaning apparatus, which is required to have improved cleaning ability with the recent increase in the degree of integration of semiconductors. The present invention has been made in view of the above problems, and an object thereof is to reliably remove dust generated during cleaning of an object to be cleaned so that the object does not reattach to the object to be cleaned after cleaning. It is to provide a cleaning method and a cleaning device.
【０００８】[0008]
【課題を解決するための手段】上記目的は、保持手段に
装着した被洗浄物を洗浄液中に位置させて前記被洗浄物
を前記保持手段と共に浸漬状態とした後、前記洗浄液を
溜める洗浄槽から前記洗浄液を排出して前記被洗浄物を
洗浄する洗浄方法において、前記保持手段から前記洗浄
槽内の前記保持手段が配置された配置位置近傍に開口す
る排出口へと向かう排液流路を介して、前記洗浄液を排
出することを特徴とする洗浄方法により達成される。SUMMARY OF THE INVENTION The above-mentioned object is to remove an object to be cleaned mounted on a holding means in a cleaning liquid so as to dip the object to be cleaned together with the holding means, and then to remove the cleaning liquid from a cleaning tank. In a cleaning method for discharging the cleaning liquid to clean the object to be cleaned, a drainage flow path extending from the holding means to a discharge opening opened in the vicinity of an arrangement position of the holding means in the cleaning tank is provided. And a cleaning method characterized by discharging the cleaning liquid.
【０００９】また、保持手段に装着した被洗浄物を洗浄
液中に位置させて前記被洗浄物を前記保持手段と共に浸
漬状態とし、前記洗浄液を溜める洗浄槽から前記洗浄液
を排出して前記被洗浄物を洗浄する洗浄装置において、
前記洗浄槽内の前記保持手段が配置された配置位置近傍
に開口し、前記洗浄槽から前記洗浄液を排出する排出口
を有することを特徴とする洗浄装置により達成される。Further, the object to be cleaned mounted on the holding means is positioned in the cleaning liquid so that the object to be cleaned is immersed in the holding means, and the cleaning liquid is discharged from the cleaning tank for accumulating the cleaning liquid to clean the object to be cleaned. In the cleaning device for cleaning
This is achieved by a cleaning device having a discharge port for discharging the cleaning liquid from the cleaning tank, the opening being opened in the cleaning tank in the vicinity of an arrangement position where the holding means is arranged.
【００１０】更に、前記排出口が、前記保持手段に形成
された前記被洗浄物を保持する保持溝の延長方向に対向
して開口していることを特徴とする洗浄装置により達成
される。Further, the present invention is achieved by a cleaning device characterized in that the discharge port is opened so as to face the extension direction of the holding groove for holding the object to be cleaned formed in the holding means.
【００１１】[0011]
【作用】本発明によれば、保持手段に装着した被洗浄物
を洗浄液中に位置させて被洗浄物を保持手段と共に浸漬
状態とした後、洗浄液を溜める洗浄槽から洗浄液を排出
して被洗浄物を洗浄する洗浄方法において、保持手段か
ら洗浄槽内の保持手段が配置された配置位置近傍に開口
する排出口へと向かう排液流路を介して、洗浄液を排出
することから、排出される洗浄液は保持手段を通って排
出口へと流れ出し、保持手段に溜まったゴミを効率良く
除去することができる。According to the present invention, the object to be cleaned mounted on the holding means is positioned in the cleaning liquid so that the object to be cleaned is immersed in the holding means, and then the cleaning liquid is discharged from the cleaning tank for storing the cleaning liquid. In a cleaning method for cleaning an object, the cleaning liquid is discharged through a drainage passage extending from the holding means to a discharge port opening near the arrangement position where the holding means in the cleaning tank is arranged. The cleaning liquid flows out to the discharge port through the holding means, and the dust accumulated in the holding means can be efficiently removed.
【００１２】また、保持手段に装着した被洗浄物を洗浄
液中に位置させて洗浄物を保持手段と共に浸漬状態と
し、洗浄液を溜める洗浄槽から洗浄液を排出して被洗浄
物を洗浄する洗浄装置において、洗浄槽内の保持手段が
配置された配置位置近傍に開口し、洗浄槽から洗浄液を
排出する排出口を有することから、保持手段から排出口
へと向かう排液流路が形成され、この排出流路を介して
排出される洗浄液により保持手段に溜まったゴミを効率
良く除去することができる。Further, in a cleaning device for cleaning an object to be cleaned by positioning the object to be cleaned mounted on the holding means in the cleaning liquid, soaking the cleaning object together with the holding means, and discharging the cleaning liquid from the cleaning tank for storing the cleaning liquid. Since the discharge port for discharging the cleaning liquid from the cleaning tank is opened near the arrangement position where the holding means is arranged in the cleaning tank, a drainage flow path from the holding means to the discharge port is formed, and this discharge is performed. The cleaning liquid discharged through the flow path can efficiently remove dust accumulated in the holding means.
【００１３】更に、排出口が、保持手段に形成された被
洗浄物を保持する保持溝の延長方向に対向して開口して
いることから、排出流路を介して排出される洗浄液によ
り保持手段に溜まったゴミを更に効率良く除去すること
ができる。Further, since the discharge port is opened so as to face the extension direction of the holding groove for holding the object to be cleaned formed in the holding means, the holding means is held by the cleaning liquid discharged through the discharge passage. It is possible to more efficiently remove dust collected in the.
【００１４】[0014]
【実施例】以下、本発明の一実施例による洗浄装置を図
面を参照して説明する。 （実施例１）図１に示すように、半導体ウエーハ洗浄装
置（洗浄装置）１０は、洗浄槽１１と、洗浄槽１１に溜
められる洗浄液Ｌとを有している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A cleaning apparatus according to an embodiment of the present invention will be described below with reference to the drawings. (Embodiment 1) As shown in FIG. 1, a semiconductor wafer cleaning device (cleaning device) 10 has a cleaning tank 11 and a cleaning liquid L stored in the cleaning tank 11.
【００１５】この洗浄槽１１内に、キャリア１２に格納
された半導体ウエーハ（被洗浄物）１３を位置させるこ
とにより、半導体ウエーハ１３を洗浄液Ｌに浸漬するこ
とができる。即ち、キャリア１２に格納した半導体ウエ
ーハ１３を洗浄槽１１に配置した後、洗浄槽１１を洗浄
液Ｌで満たすことにより、或は、洗浄液Ｌで満たした洗
浄槽１１に半導体ウエーハ１３を沈めることにより、半
導体ウエーハ１３を浸漬状態とすることができる。By arranging the semiconductor wafer (object to be cleaned) 13 stored in the carrier 12 in the cleaning tank 11, the semiconductor wafer 13 can be immersed in the cleaning liquid L. That is, by arranging the semiconductor wafer 13 stored in the carrier 12 in the cleaning tank 11 and then filling the cleaning tank 11 with the cleaning liquid L, or by immersing the semiconductor wafer 13 in the cleaning tank 11 filled with the cleaning liquid L, The semiconductor wafer 13 can be immersed.
【００１６】洗浄槽１１は、筒体の底面開口を底板によ
り塞いだカップ状に形成されており、側面下部及び底部
には、洗浄槽１１内の洗浄液Ｌを排出するための４個の
排出口１４ａ，１４ｂ，１４ｃ，１４ｄが開けられてい
る。これら排出口１４ａ，１４ｂ，１４ｃ，１４ｄは、
洗浄槽１１の、後述するキャリア１２のウエーハ保持部
（保持手段）１８ａ，１８ｂ，１８ｃ，１８ｄが配置さ
れた配置位置近傍にそれぞれ開口している。The cleaning tank 11 is formed in a cup shape in which the bottom opening of the cylindrical body is closed by a bottom plate, and four discharge ports for discharging the cleaning liquid L in the cleaning tank 11 are provided in the lower side surface and the bottom portion. 14a, 14b, 14c and 14d are opened. These outlets 14a, 14b, 14c, 14d are
Each of the cleaning tanks 11 is opened in the vicinity of an arrangement position where wafer holding portions (holding means) 18a, 18b, 18c, 18d of the carrier 12 described later are arranged.
【００１７】なお、各排出口１４ａ，１４ｂ，１４ｃ，
１４ｄを、後述するキャリア１２に形成された保持溝１
９の延長方向に向かって開口する状態に形成しても良
い。また、排出口１４ａは排液通路１５ａに、排出口１
４ｂ及び排出口１４ｃは連絡路１６ａ，１６ｂを介して
排液通路１５ｂに、排出口１４ｄは排液通路１５ｃに、
それぞれ連通しており、各排液通路１５ａ，１５ｂ，１
５ｃを介して、洗浄後の洗浄液Ｌを洗浄槽１１から排出
することができる。各排液通路１５ａ，１５ｂ，１５ｃ
には、それぞれ排液弁１７ａ，１７ｂ，１７ｃが取り付
けられており、各排液弁１７ａ，１７ｂ，１７ｃの開閉
により、洗浄液Ｌを洗浄槽１１外に排出し、或は洗浄液
Ｌを洗浄槽１１内に溜めることができる。The outlets 14a, 14b, 14c,
14d is a holding groove 1 formed in a carrier 12 described later.
You may form in the state which opens toward the extension direction of 9. Further, the discharge port 14a is connected to the drain passage 15a, and the discharge port 1
4b and the discharge port 14c to the drainage passage 15b via the communication paths 16a and 16b, the discharge port 14d to the drainage passage 15c,
They communicate with each other, and each drainage passage 15a, 15b, 1
The cleaning liquid L after cleaning can be discharged from the cleaning tank 11 via 5c. Each drainage passage 15a, 15b, 15c
Drain valves 17a, 17b, 17c are attached to the cleaning liquid L, and the cleaning liquid L is discharged to the outside of the cleaning tank 11 by opening and closing the drain valves 17a, 17b, 17c. Can be stored inside.
【００１８】従って、洗浄液Ｌを洗浄槽１１外に排出す
る排液時、洗浄槽１１内の洗浄液Ｌは、近くに位置する
各排出口１４に向かって流れ込むこととなり、洗浄液Ｌ
中には、各排出口１４に向かう排液流路が形成されるこ
ととなる。洗浄液Ｌは、例えば純水が用いられており、
洗浄槽１１に溜められて半導体ウエーハ１３を浸漬させ
た後、排出される。Therefore, when the cleaning liquid L is discharged to the outside of the cleaning tank 11, the cleaning liquid L in the cleaning tank 11 flows toward each of the discharge ports 14 located nearby, and the cleaning liquid L is discharged.
A drainage flow path toward each discharge port 14 is formed therein. As the cleaning liquid L, for example, pure water is used,
The semiconductor wafer 13 stored in the cleaning tank 11 is dipped in the semiconductor wafer 13 and then discharged.
【００１９】キャリア１２は、矩形状の二枚の側板（図
示せず）と、離間する両側板間に掛け渡された４本のウ
エーハ保持部（保持手段）１８ａ，１８ｂ，１８ｃ，１
８ｄとを有している。４本のウエーハ保持部１８ａ，１
８ｂ，１８ｃ，１８ｄは、棒状体により形成されてお
り、半導体ウエーハ１３のほぼ下半部周縁をほぼ３等分
する位置に配置されている。各ウエーハ保持部１８ａ，
１８ｂ，１８ｃ，１８ｄには、長手方向にほぼ平行に並
んで複数の保持溝１９が設けられている。The carrier 12 has two rectangular side plates (not shown) and four wafer holding portions (holding means) 18a, 18b, 18c, 1 which are hung between both side plates which are separated from each other.
8d and. Four wafer holding portions 18a, 1
8b, 18c, and 18d are formed of rod-like bodies, and are arranged at positions that divide the peripheral edge of the lower half part of the semiconductor wafer 13 into approximately three equal parts. Each wafer holding portion 18a,
A plurality of holding grooves 19 are provided in 18b, 18c, and 18d so as to be aligned substantially parallel to the longitudinal direction.
【００２０】保持溝１９は、棒状体の断面ほぼ中央に達
する切り込みにより形成されており、上部に位置するウ
エーハ保持部１８ａ及びウエーハ保持部１８ｄの保持溝
１９は、開口部をほぼ真横に向けて互いに対向させてお
り、下部に位置するウエーハ保持部１８ｂ及びウエーハ
保持部１８ｃの保持溝１９は、開口部を向かい合う斜め
上方に向けている。The holding groove 19 is formed by a notch reaching almost the center of the cross section of the rod-shaped body, and the holding grooves 19 of the wafer holding portions 18a and 18d located at the upper portion have their openings oriented almost right beside each other. The holding grooves 19 of the wafer holding portion 18b and the wafer holding portion 18c located at the bottom are opposed to each other, and the openings are directed obliquely upward and facing each other.
【００２１】従って、キャリア１２の両側板間には、側
板に対してほぼ平行となる縦置き状態に複数の半導体ウ
エーハ１３を並べて置くことができ、更に、各ウエーハ
保持部１８ａ，１８ｂ，１８ｃ，１８ｄに並べ置かれた
各半導体ウエーハ１３は、周縁部を保持溝１９に入り込
ませたほぼ固定状態に保持されることとなる。次に、半
導体ウエーハ洗浄装置の作用を説明する。Therefore, between the both side plates of the carrier 12, a plurality of semiconductor wafers 13 can be placed side by side in a vertical state in which they are substantially parallel to the side plates, and further, the respective wafer holding portions 18a, 18b, 18c, The semiconductor wafers 13 arranged side by side on 18d are held in a substantially fixed state with the peripheral edge portions thereof being inserted into the holding grooves 19. Next, the operation of the semiconductor wafer cleaning device will be described.
【００２２】先ず、空の洗浄槽１１内に、半導体ウエー
ハ１３を格納したキャリア１２を配置する。続いて、排
液弁１７を全て閉じた後、洗浄槽１１の上端近傍まで洗
浄液Ｌを溜めて、半導体ウエーハ１３を洗浄液Ｌに浸漬
した状態とする。なお、洗浄液Ｌで満たした洗浄槽１１
に半導体ウエーハ１３を沈めることにより、半導体ウエ
ーハ１３を浸漬状態にしても良い。First, a carrier 12 containing a semiconductor wafer 13 is placed in an empty cleaning tank 11. Then, after all the drain valves 17 are closed, the cleaning liquid L is stored up to near the upper end of the cleaning tank 11 and the semiconductor wafer 13 is immersed in the cleaning liquid L. The cleaning tank 11 filled with the cleaning liquid L
The semiconductor wafer 13 may be immersed in the semiconductor wafer 13 by immersing the semiconductor wafer 13 therein.
【００２３】洗浄液Ｌに浸漬することにより半導体ウエ
ーハ１３が洗浄され、半導体ウエーハ１３からゴミが洗
い落とされる。次に、半導体ウエーハ１３を洗浄液Ｌに
浸漬した状態のまま、各排液弁１７ａ，１７ｂ，１７ｃ
を全て開き、洗浄槽１１内の洗浄液Ｌを各排液通路１５
ａ，１５ｂ，１５ｃから排出する。The semiconductor wafer 13 is cleaned by being immersed in the cleaning liquid L, and dust is washed off from the semiconductor wafer 13. Next, with the semiconductor wafer 13 still immersed in the cleaning liquid L, each drain valve 17a, 17b, 17c
To open the cleaning liquid L in the cleaning tank 11 for each drain passage 15
It is discharged from a, 15b and 15c.
【００２４】この際、洗浄槽１１内の洗浄液Ｌ中には各
排出口１４ａ，１４ｂ，１４ｃ，１４ｄに向かう排液流
路が形成されることから、例え半導体ウエーハ１３から
洗い落とされたゴミが保持溝１９に入り込んでしまった
としても、各排出口１４ａ，１４ｂ，１４ｃ，１４ｄに
吸い込まれる洗浄液Ｌの流れによって保持溝１９から引
き出される。その上、一旦保持溝１９から離脱したゴミ
は直に各排出口１４ａ，１４ｂ，１４ｃ，１４ｄに吸い
込まれて、半導体ウエーハ１３の表面に再び付着するこ
とはない。At this time, the cleaning liquid L in the cleaning tank 11 has a drainage flow path toward each of the discharge ports 14a, 14b, 14c, 14d, so that the dust washed off from the semiconductor wafer 13 is removed. Even if the cleaning liquid L enters the holding groove 19, the cleaning liquid L is drawn out from the holding groove 19 by the flow of the cleaning liquid L sucked into the discharge ports 14a, 14b, 14c, 14d. Moreover, the dust once detached from the holding groove 19 is directly sucked into the respective discharge ports 14a, 14b, 14c, 14d and does not adhere to the surface of the semiconductor wafer 13 again.
【００２５】なお、各排出口１４ａ，１４ｂ，１４ｃ，
１４ｄを、保持溝１９の延長方向に向かって開口する状
態に形成した場合、保持溝１９から各排出口１４ａ，１
４ｂ，１４ｃ，１４ｄに向かってよりスムーズな流れと
なる排液流路が形成されることとなり、保持溝１９に入
り込んだゴミの取り出し及び保持溝１９から離脱したゴ
ミの各排出口１４ａ，１４ｂ，１４ｃ，１４ｄへの吸い
込みを、より容易且つ確実に行うことができる。The outlets 14a, 14b, 14c,
When 14d is formed so as to open in the extension direction of the holding groove 19, the discharge ports 14a, 1
4b, 14c, and 14d, a drainage flow path is formed that provides a smoother flow, and thus the dust that has entered the holding groove 19 and the dust discharge ports 14a, 14b that have separated from the holding groove 19 are discharged. The suction to 14c and 14d can be performed more easily and reliably.
【００２６】続いて、洗浄槽１１から洗浄液Ｌを全て排
出した後、各排液弁１７ａ，１７ｂ，１７ｃを全て閉じ
て再び洗浄液Ｌを洗浄槽１１内に溜め、半導体ウエーハ
１３を洗浄液Ｌに浸漬した後、洗浄液Ｌを排出する。以
後、洗浄液Ｌを溜めるのと排出を繰り返して半導体ウエ
ーハ１３の洗浄を行う。このように、各排出口１４ａ，
１４ｂ，１４ｃ，１４ｄが、洗浄槽１１内の各ウエーハ
保持部１８ａ，１８ｂ，１８ｃ，１８ｄが配置された配
置位置近傍に開口していることから、各ウエーハ保持部
１８ａ，１８ｂ，１８ｃ，１８ｄから各排出口１４ａ，
１４ｂ，１４ｃ，１４ｄへと向かう排液流路が形成さ
れ、この排液流路を介して洗浄液Ｌを排出することによ
り、半導体ウエーハ１３の洗浄の際に、保持溝１９に溜
まったゴミの除去を効率良く行うことができる。Then, after all the cleaning liquid L has been discharged from the cleaning tank 11, the drain valves 17a, 17b, 17c are all closed and the cleaning liquid L is again stored in the cleaning tank 11, and the semiconductor wafer 13 is immersed in the cleaning liquid L. After that, the cleaning liquid L is discharged. After that, the cleaning liquid L is accumulated and discharged repeatedly to clean the semiconductor wafer 13. In this way, each outlet 14a,
Since 14b, 14c, and 14d open in the vicinity of the arrangement position where the wafer holding portions 18a, 18b, 18c, and 18d are arranged in the cleaning tank 11, the wafer holding portions 18a, 18b, 18c, and 18d Each outlet 14a,
A drainage flow path toward 14b, 14c, 14d is formed, and the cleaning liquid L is discharged through this drainage flow path to remove dust accumulated in the holding groove 19 when cleaning the semiconductor wafer 13. Can be done efficiently.
【００２７】よって、半導体ウエーハ１３の表面の洗浄
と同時に、従来取れ難かった保持溝１９に入り込んだゴ
ミの除去を効率良く行うことができることから、洗浄処
理後の次の処理の際に、保持溝１９のゴミを半導体ウエ
ーハ１３に付着させたまま持ち込むことがなく、製品の
歩留まりを低下させることがない。しかも、洗浄液Ｌの
排出時の流れを利用しているので、従来の洗浄方法及び
洗浄装置と比較してコストも変わらず、更に、洗浄時の
制御方法も従来と同様に行うことができる。 （実施例２）この実施例に示す洗浄装置は、３本のウエ
ーハ保持部を有するキャリアを使用するものであり、こ
れらのウエーハ保持部に対応する排出通路が形成された
洗浄槽を有する他は、洗浄装置１０と同様の構成及び効
果を有している。Therefore, at the same time as cleaning the surface of the semiconductor wafer 13, it is possible to efficiently remove the dust that has entered the holding groove 19 which has been difficult to remove, so that the holding groove can be removed during the next process after the cleaning process. The dust of 19 is not brought in while being attached to the semiconductor wafer 13 and the yield of products is not reduced. Moreover, since the flow at the time of discharging the cleaning liquid L is used, the cost is not different from that of the conventional cleaning method and the cleaning apparatus, and the control method at the time of cleaning can be performed in the same manner as the conventional method. (Embodiment 2) The cleaning apparatus shown in this embodiment uses a carrier having three wafer holding portions, and has a cleaning tank in which a discharge passage corresponding to these wafer holding portions is formed. The cleaning device 10 has the same configuration and effect as the cleaning device 10.
【００２８】洗浄装置２０に使用するキャリア２１は、
図２に示すように、上部に位置する両ウエーハ保持部１
８ａ，１８ｄ及び両ウエーハ保持部１８ａ，１８ｄから
等間隔離間して下部に位置するウエーハ保持部２２の、
３本のウエーハ保持部を有しており、ウエーハ保持部２
２は、保持溝１９の開口部をほぼ真上に向けている他
は、ウエーハ保持部１８ｂ或は１８ｃと同様の構成及び
作用を有している。The carrier 21 used in the cleaning device 20 is
As shown in FIG. 2, both wafer holding portions 1 located at the upper portion
8a, 18d and both of the wafer holding portions 18a, 18d of the wafer holding portion 22 located at the lower part with an equal interval.
The wafer holding unit 2 has three wafer holding units.
2 has the same structure and operation as the wafer holding portion 18b or 18c, except that the opening of the holding groove 19 is directed almost right above.
【００２９】そして、洗浄装置２０の洗浄槽２３は、排
出口１４ａ，１４ｄと同様の構成及び作用を有し各排液
通路１５ａ，１５ｃに連通する各排出口２４ａ，２４ｄ
と、ウエーハ保持部２２の両側に位置してウエーハ保持
部２２が配置された配置位置近傍にそれぞれ開口し、各
連絡路２５ａ，２５ｂを介して排液弁１７ａ，１７ｃの
上方で各排液通路１５ａ，１５ｃに連通する排出口２４
ｂ，２４ｃとを有している（（ａ）参照）。The cleaning tank 23 of the cleaning device 20 has the same structure and operation as the discharge ports 14a and 14d, and the discharge ports 24a and 24d communicate with the drain passages 15a and 15c.
And opening on the both sides of the wafer holding portion 22 in the vicinity of the arrangement position where the wafer holding portion 22 is arranged, and above each drain passage 17a, 17c via each connecting passage 25a, 25b. Discharge port 24 communicating with 15a and 15c
b and 24c (see (a)).
【００３０】また、洗浄槽２３は、排出口２４ｃを設け
ず３個の排出口２４ａ，２４ｂ，２４ｄからなる洗浄槽
２６としてもよい（（ｂ）参照）。この洗浄装置２０に
より、洗浄液Ｌの各排出口２４ａ，２４ｂ，２４ｃ，２
４ｄ（或は、各排出口２４ａ，２４ｂ，２４ｄ）が、洗
浄槽１１内の各ウエーハ保持部１８ａ，２２，１８ｄが
配置された配置位置近傍に開口していることから、各ウ
エーハ保持部１８ａ，２２，１８ｄから各排出口２４
ａ，２４ｂ，２４ｃ，２４ｄ（或は、各排出口２４ａ，
２４ｂ，２４ｄ）へと向かう排液流路が形成され、この
排液流路を介して洗浄液Ｌを排出することにより、半導
体ウエーハ１３の洗浄の際に、保持溝１９に溜まったゴ
ミの除去を効率良く行うことができる。Further, the cleaning tank 23 may be a cleaning tank 26 having three discharge ports 24a, 24b, 24d without providing the discharge port 24c (see (b)). With this cleaning device 20, the respective outlets 24a, 24b, 24c, 2 of the cleaning liquid L are discharged.
4d (or each discharge port 24a, 24b, 24d) is opened in the cleaning tank 11 in the vicinity of the arrangement position where each wafer holding portion 18a, 22, 18d is arranged. Therefore, each wafer holding portion 18a , 22, 18d to each outlet 24
a, 24b, 24c, 24d (or each outlet 24a,
24b, 24d) is formed, and the cleaning liquid L is discharged through the drainage flow path to remove the dust accumulated in the holding groove 19 when the semiconductor wafer 13 is cleaned. It can be done efficiently.
【００３１】よって、半導体ウエーハ１３の表面の洗浄
と同時に、従来取れ難かった保持溝１９に入り込んだゴ
ミの除去を効率良く行うことができることから、洗浄処
理後の次の処理の際に、保持溝１９のゴミを半導体ウエ
ーハ１３に付着させたまま持ち込むことがなく、製品の
歩留まりを低下させることがない。なお、本発明は上記
実施例に限らず種々の変形が可能であり、被洗浄物が、
例えば洗浄液を使用して洗浄しその後洗浄液を排出する
ものであれば、半導体ウエーハ以外のものにも適用する
ことができる。Therefore, at the same time as cleaning the surface of the semiconductor wafer 13, it is possible to efficiently remove the dust that has entered the holding groove 19 which has been difficult to remove, so that the holding groove can be removed during the next process after the cleaning process. The dust of 19 is not brought in while being attached to the semiconductor wafer 13 and the yield of products is not reduced. The present invention is not limited to the above embodiment, and various modifications are possible.
For example, as long as the cleaning liquid is used for cleaning and then the cleaning liquid is discharged, the present invention can be applied to other than semiconductor wafers.
【００３２】[0032]
【発明の効果】以上の通り、本発明によれば、被洗浄物
の洗浄に際し生ずるゴミを確実に取り除くことにより、
洗浄後の被洗浄物にゴミが再付着することがない。As described above, according to the present invention, it is possible to surely remove the dust generated during the cleaning of the object to be cleaned.
Dust will not reattach to the cleaned object after cleaning.
【図１】本発明の実施例１による洗浄装置の概略説明図
である。FIG. 1 is a schematic explanatory diagram of a cleaning device according to a first embodiment of the present invention.
【図２】本発明の実施例２による洗浄装置の概略説明図
である。FIG. 2 is a schematic explanatory diagram of a cleaning device according to a second embodiment of the present invention.
【図３】従来の洗浄装置の概略説明図である。FIG. 3 is a schematic explanatory view of a conventional cleaning device.
１０…半導体ウエーハ洗浄装置（洗浄装置） １１…洗浄槽 １２…キャリア １３…半導体ウエーハ（被洗浄物） １４ａ，１４ｂ，１４ｃ，１４ｄ…排出口 １５ａ，１５ｂ，１５ｃ…排液通路 １６ａ，１６ｂ…連絡路 １７ａ，１７ｂ，１７ｃ…排液弁 １８ａ，１８ｂ，１８ｃ，１８ｄ…ウエーハ保持部（保
持手段） １９…保持溝 ２０…洗浄装置 ２１…キャリア ２２…ウエーハ保持部 ２３…洗浄槽 ２４ａ，２４ｂ，２４ｃ，２４ｄ…排出口 ２５ａ，２５ｂ…連絡路 ２６…洗浄槽 Ｌ…洗浄液10 ... Semiconductor wafer cleaning device (cleaning device) 11 ... Cleaning tank 12 ... Carrier 13 ... Semiconductor wafer (object to be cleaned) 14a, 14b, 14c, 14d ... Discharge port 15a, 15b, 15c ... Drainage passage 16a, 16b ... Contact Channels 17a, 17b, 17c ... Drainage valves 18a, 18b, 18c, 18d ... Wafer holding part (holding means) 19 ... Holding groove 20 ... Cleaning device 21 ... Carrier 22 ... Wafer holding part 23 ... Cleaning tanks 24a, 24b, 24c , 24d ... Discharge port 25a, 25b ... Communication path 26 ... Cleaning tank L ... Cleaning liquid
Claims (3)
８ｄ）に装着した被洗浄物（１３）を洗浄液（Ｌ）中に
位置させて前記被洗浄物（１３）を前記保持手段（１８
ａ，１８ｂ，１８ｃ，１８ｄ）と共に浸漬状態とした
後、前記洗浄液（Ｌ）を溜める洗浄槽（１１）から前記
洗浄液Ｌを排出して前記被洗浄物（１３）を洗浄する洗
浄方法において、 前記保持手段（１８ａ，１８ｂ，１８ｃ，１８ｄ）から
前記洗浄槽（１１）内の前記保持手段（１８ａ，１８
ｂ，１８ｃ，１８ｄ）が配置された配置位置近傍に開口
する排出口（１４ａ，１４ｂ，１４ｃ，１４ｄ）へと向
かう排液流路を介して、前記洗浄液（Ｌ）を排出するこ
とを特徴とする洗浄方法。1. Holding means (18a, 18b, 18c, 1)
8d) the object to be cleaned (13) is placed in the cleaning liquid (L) to hold the object to be cleaned (13) by the holding means (18).
a, 18b, 18c, 18d), and a cleaning method in which the cleaning liquid (L) is discharged from the cleaning tank (11) that stores the cleaning liquid (L) to clean the object to be cleaned (13). From the holding means (18a, 18b, 18c, 18d) to the holding means (18a, 18) in the cleaning tank (11)
(b, 18c, 18d) is arranged to discharge the cleaning liquid (L) through a drainage flow path toward a discharge port (14a, 14b, 14c, 14d) opened near the arrangement position. How to wash.
８ｄ）に装着した被洗浄物（１３）を洗浄液（Ｌ）中に
位置させて前記被洗浄物（１３）を前記保持手段（１８
ａ，１８ｂ，１８ｃ，１８ｄ）と共に浸漬状態とし、前
記洗浄液（Ｌ）を溜める洗浄槽（１１）から前記洗浄液
（Ｌ）を排出して前記被洗浄物（１３）を洗浄する洗浄
装置において、 前記洗浄槽（１１）内の前記保持手段（１８ａ，１８
ｂ，１８ｃ，１８ｄ）が配置された配置位置近傍に開口
し、前記洗浄槽（１１）から前記洗浄液（Ｌ）を排出す
る排出口（１４ａ，１４ｂ，１４ｃ，１４ｄ）を有する
ことを特徴とする洗浄装置。2. Holding means (18a, 18b, 18c, 1)
8d) the object to be cleaned (13) is placed in the cleaning liquid (L) to hold the object to be cleaned (13) by the holding means (18).
a, 18b, 18c, 18d), and a cleaning apparatus for cleaning the article to be cleaned (13) by discharging the cleaning solution (L) from a cleaning tank (11) that stores the cleaning solution (L), The holding means (18a, 18) in the cleaning tank (11)
b, 18c, 18d) is provided in the vicinity of the position where the cleaning liquid (L) is discharged from the cleaning tank (11), and the discharge port (14a, 14b, 14c, 14d) is provided. Cleaning device.
記保持手段（１８ａ，１８ｂ，１８ｃ，１８ｄ）に形成
された前記被洗浄物（１３）を保持する保持溝（１９）
の延長方向に対向して開口していることを特徴とする洗
浄装置。3. The cleaning device according to claim 2, wherein the discharge port (14a, 14b, 14c, 14d) is formed in the holding means (18a, 18b, 18c, 18d). ) Holding groove (19)
A cleaning device having openings facing each other in the extension direction of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3804194A JPH07249604A (en) | 1994-03-09 | 1994-03-09 | Washing method and washing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3804194A JPH07249604A (en) | 1994-03-09 | 1994-03-09 | Washing method and washing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07249604A true JPH07249604A (en) | 1995-09-26 |
Family
ID=12514457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3804194A Pending JPH07249604A (en) | 1994-03-09 | 1994-03-09 | Washing method and washing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07249604A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09148289A (en) * | 1995-09-20 | 1997-06-06 | Tokyo Electron Ltd | Cleaning device |
| US6164300A (en) * | 1996-09-28 | 2000-12-26 | Steag Microtech Gmbh | Substate-treating device |
| US6352084B1 (en) | 1996-10-24 | 2002-03-05 | Steag Microtech Gmbh | Substrate treatment device |
| WO2007065665A1 (en) * | 2005-12-06 | 2007-06-14 | Stangl Semiconductor Equipment Ag | Apparatus and method for cleaning a sawn wafer block |
| JP2008093529A (en) * | 2006-10-10 | 2008-04-24 | Nidec Sankyo Corp | Washing apparatus and washing method |
-
1994
- 1994-03-09 JP JP3804194A patent/JPH07249604A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09148289A (en) * | 1995-09-20 | 1997-06-06 | Tokyo Electron Ltd | Cleaning device |
| US6164300A (en) * | 1996-09-28 | 2000-12-26 | Steag Microtech Gmbh | Substate-treating device |
| US6352084B1 (en) | 1996-10-24 | 2002-03-05 | Steag Microtech Gmbh | Substrate treatment device |
| WO2007065665A1 (en) * | 2005-12-06 | 2007-06-14 | Stangl Semiconductor Equipment Ag | Apparatus and method for cleaning a sawn wafer block |
| DE102005058269B4 (en) * | 2005-12-06 | 2011-12-01 | Stangl Semiconductor Equipment Ag | Device for cleaning a sawn wafer block |
| JP2008093529A (en) * | 2006-10-10 | 2008-04-24 | Nidec Sankyo Corp | Washing apparatus and washing method |
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