JPH07169852A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法Info
- Publication number
- JPH07169852A JPH07169852A JP6172552A JP17255294A JPH07169852A JP H07169852 A JPH07169852 A JP H07169852A JP 6172552 A JP6172552 A JP 6172552A JP 17255294 A JP17255294 A JP 17255294A JP H07169852 A JPH07169852 A JP H07169852A
- Authority
- JP
- Japan
- Prior art keywords
- axis direction
- pattern
- semiconductor device
- interval
- space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1993P19947 | 1993-09-27 | ||
| KR1019930019947A KR970005167B1 (ko) | 1993-09-27 | 1993-09-27 | 반도체장치 및 그 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07169852A true JPH07169852A (ja) | 1995-07-04 |
Family
ID=19364772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6172552A Pending JPH07169852A (ja) | 1993-09-27 | 1994-07-25 | 半導体装置およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH07169852A (ko) |
| KR (1) | KR970005167B1 (ko) |
-
1993
- 1993-09-27 KR KR1019930019947A patent/KR970005167B1/ko not_active IP Right Cessation
-
1994
- 1994-07-25 JP JP6172552A patent/JPH07169852A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR950010210A (ko) | 1995-04-26 |
| KR970005167B1 (ko) | 1997-04-12 |
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