JPH07157893A - Sn plated wire for electrical contact point and production thereof - Google Patents
Sn plated wire for electrical contact point and production thereofInfo
- Publication number
- JPH07157893A JPH07157893A JP30815293A JP30815293A JPH07157893A JP H07157893 A JPH07157893 A JP H07157893A JP 30815293 A JP30815293 A JP 30815293A JP 30815293 A JP30815293 A JP 30815293A JP H07157893 A JPH07157893 A JP H07157893A
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- JP
- Japan
- Prior art keywords
- alloy
- wire
- plated
- plated wire
- layer
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は電気接点用Ｓｎめっき線
とその製造方法に関し、更に詳しくは、ＳｎまたはＳｎ
合金の耐食性，耐酸化性を改善することにより、電気接
点にも適用できるようにしたＳｎめっき線とそれを製造
する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Sn-plated wire for electrical contacts and a method for producing the same, more specifically, Sn or Sn.
The present invention relates to a Sn-plated wire which can be applied to an electric contact by improving the corrosion resistance and the oxidation resistance of an alloy, and a method for producing the Sn-plated wire.
【０００２】[0002]
【従来の技術】従来から、電気接点材料としては、りん
青銅やベリリウム銅のようなバネ性と耐食性に優れてい
るＣｕ合金の母材にＡｕまたはＡｇをめっきした材料が
知られている。しかしながら、上記した材料は高価であ
る。そのため、性能低下は起こさず、かつ低価格である
材料の開発が求められている。このような代替材料の１
つとして、ＡｕまたはＡｇに代えて、ＳｎまたはＳｎ合
金をめっきした材料の検討が進められている。2. Description of the Related Art Conventionally, as an electrical contact material, a material in which a base material of Cu alloy such as phosphor bronze or beryllium copper having excellent spring property and corrosion resistance is plated with Au or Ag is known. However, the materials mentioned above are expensive. Therefore, there is a demand for the development of a material that does not deteriorate in performance and is inexpensive. One of such alternative materials
As one of the studies, a material plated with Sn or Sn alloy instead of Au or Ag is being studied.
【０００３】ところで、ＳｎまたはＳｎ合金のめっき層
で被覆されている線材（以下、Ｓｎめっき線という）
は、耐食性，半田付け性が優れているので、従来から、
コンデンサーや半導体のリード線，コネクタ，電線ケー
ブルなどに広く用いられている。上記線材のめっき層を
形成する際には、溶融めっき，電気めっき，電気めっき
したのち加熱溶融する（リフロー）などの方法が適用さ
れているが、主流は溶融めっきと電気めっきである。こ
れらの方法のうち、溶融めっきは比較的低コストで行う
ことができる。しかし、形成されためっき層は偏肉を起
こしやすく、まためっき層に基材成分が拡散してめっき
層の耐食性が経時的に劣化するという問題がある。By the way, a wire rod coated with a Sn or Sn alloy plating layer (hereinafter referred to as Sn plated wire)
Has excellent corrosion resistance and solderability, so
Widely used in capacitors, semiconductor lead wires, connectors, and electric cables. When forming the plated layer of the wire rod, methods such as hot dipping, electroplating, electroplating, and then heating and melting (reflow) are applied. The mainstream methods are hot dipping and electroplating. Of these methods, hot dipping can be performed at a relatively low cost. However, there is a problem that the formed plating layer is apt to cause uneven thickness and that the base material component diffuses into the plating layer to deteriorate the corrosion resistance of the plating layer with time.
【０００４】また、電気めっきはめっき層の偏肉は起こ
さないものの、電着時における内部応力の発生によりＳ
ｎウイスカが発生し、まためっき組織が緻密になるため
多数の結晶粒界が存在するようになり、基材成分の拡散
速度は速くなり耐食性の低下が大きいという問題があ
る。このようなことから、電気めっきの上記欠点を緩和
するために、電気めっき後にリフロー処理を施してＳｎ
またはＳｎ合金を再結晶化するという対策が知られてい
る。Although electroplating does not cause uneven thickness of the plating layer, it causes S due to the generation of internal stress during electrodeposition.
Since n whiskers are generated and the plated structure becomes dense, a large number of crystal grain boundaries are present, the diffusion rate of the base material component is increased, and the corrosion resistance is greatly reduced. Therefore, in order to alleviate the above-mentioned drawbacks of electroplating, a reflow treatment is performed after electroplating to make Sn.
Alternatively, a measure to recrystallize the Sn alloy is known.
【０００５】[0005]
【発明が解決しようとする課題】Ｓｎめっき線は安価な
電気接点材料として期待がかけられている。しかし、Ｓ
ｎめっき線を電気接点材料として使用する場合には、現
在のところ、次のような問題が発生するため、採用され
ていないという状況にある。すなわち、まず、Ｓｎまた
はＳｎ合金は軟質な材料であるため、電気接点材料の場
合のように、金属が相互に接触しあうと摩耗が激しく進
み、その使用寿命が短くなってしまうということであ
る。The Sn-plated wire is expected as an inexpensive electrical contact material. But S
In the case of using an n-plated wire as an electrical contact material, the following problems occur at present, and therefore, it is not adopted. That is, first, since Sn or Sn alloy is a soft material, when metals contact each other like in the case of an electric contact material, the metal wears rapidly and the service life thereof is shortened. .
【０００６】また、導電ゴムと接触すると、Ｓｎまたは
Ｓｎ合金は安定な電気絶縁性の酸化皮膜を形成するた
め、接触抵抗が経時的に上昇していくということであ
る。本発明は、従来のＳｎめっき線における上記した問
題を解決して、前記接点材料として使用することができ
るＳｎめっき線とその製造方法の提供を目的とする。Further, when contacted with the conductive rubber, the Sn or Sn alloy forms a stable electrically insulating oxide film, so that the contact resistance increases with time. An object of the present invention is to solve the above-mentioned problems in the conventional Sn-plated wire and provide an Sn-plated wire that can be used as the contact material and a manufacturing method thereof.
【０００７】[0007]
【課題を解決するための手段】上記した目的を達成する
ために、本発明においては、ＣｕまたはＣｕ合金の線材
の表面が、結晶粒径２μｍ以上のＳｎまたはＳｎ合金の
層で被覆されていることを特徴とする電気接点用Ｓｎめ
っき線が提供され、また、ＣｕまたはＣｕ合金の線材の
表面に電気めっき法でＳｎまたはＳｎ合金のめっき層を
形成し、前記めっき層に加熱溶融処理を施し、ついで、
前記めっき層の融点をＴｍ（℃）としたとき、Ｔｍ〜Ｔ
ｍ−５０（℃）の温度域で２秒間以上保持したのち冷却
することを特徴とする電気接点用Ｓｎめっき線の製造方
法が提供される。In order to achieve the above object, in the present invention, the surface of a wire of Cu or Cu alloy is covered with a layer of Sn or Sn alloy having a crystal grain size of 2 μm or more. An Sn-plated wire for electrical contacts is provided, and a Sn or Sn alloy plated layer is formed on the surface of a Cu or Cu alloy wire by an electroplating method, and the plated layer is heat-melted. By the way,
When the melting point of the plating layer is Tm (° C), Tm to T
A method for producing an Sn-plated wire for an electrical contact is provided, which is characterized by holding for 2 seconds or more in a temperature range of m-50 (° C) and then cooling.
【０００８】まず、本発明のＳｎめっき線において、基
材表面を被覆する層は、結晶粒径が２μｍ以上のＳｎま
たはＳｎ合金から成る再結晶層である。結晶粒径が２μ
ｍより小さい再結晶で構成されている層の場合は、結晶
粒界の数が多すぎるため、ここを通って基材成分が拡散
して耐食性の低下が引き起こされるとともに、逆に大気
中の酸化性成分が内部に拡散しやすく、この層それ自体
の耐酸化性が低下するようになる。First, in the Sn-plated wire of the present invention, the layer that covers the surface of the base material is a recrystallized layer made of Sn or a Sn alloy having a crystal grain size of 2 μm or more. Crystal grain size is 2μ
In the case of a layer composed of recrystallized grains smaller than m, the number of crystal grain boundaries is too large, so that the base material component diffuses therethrough to cause a decrease in corrosion resistance and, conversely, oxidation in the atmosphere. The oxidative component easily diffuses inside, and the oxidation resistance of this layer itself decreases.
【０００９】しかし、結晶粒径を過度に大きくしようと
すると、冷却時間を過度に長くすることが必要になり、
生産性の点で不利である。また、高温での長時間保持
は、基材部分の拡散が進行して逆に耐食性が劣化する問
題が発生してくるので、結晶粒径は２〜５μｍ程度に制
御されていることが好ましい。このＳｎめっき線は次の
ようにして製造することができる。However, if the crystal grain size is excessively increased, it is necessary to lengthen the cooling time excessively,
It is disadvantageous in terms of productivity. Further, holding at high temperature for a long time causes a problem that the corrosion resistance is deteriorated due to the progress of diffusion of the base material portion, so the crystal grain size is preferably controlled to about 2 to 5 μm. This Sn-plated wire can be manufactured as follows.
【００１０】まず、ＣｕまたはＣｕめっき合金から成る
基材の表面に、公知の電気めっき法によってＳｎまたは
Ｓｎ合金から成るめっき層を形成する。基材のＣｕ合金
としては、例えば、Ｃｕ−Ｚｎ系，Ｃｕ−Ｓｎ系，純Ｃ
ｕ系，Ｃｕ−Ｎｉ系およびＦｅ合金系にＣｕ被覆したも
のなどをあげることができ、またＳｎ合金としては、例
えば、Ｓｎ−Ｐｂ系，Ｓｎ−Ｚｎ系，Ｓｎ−Ｎｉ系，Ｓ
ｎ−Ｃｏ系などをあげることができる。First, a plating layer made of Sn or Sn alloy is formed on the surface of a base material made of Cu or Cu plating alloy by a known electroplating method. As the Cu alloy of the base material, for example, Cu-Zn system, Cu-Sn system, pure C
Examples include u-based, Cu-Ni-based, and Fe alloy-based alloys coated with Cu. Examples of Sn alloys include Sn-Pb-based, Sn-Zn-based, Sn-Ni-based, and S-based alloys.
Examples thereof include n-Co type.
【００１１】なお、電気めっきに先立ち、基材に対し、
脱脂，酸洗を施して表面を活性化することが好ましい。
また、めっき層は基材の表面に直接形成してもよく、Ｎ
ｉめっきやＣｕめっきを施して厚み0.２〜1.０μｍ程度
の下地めっき層を形成し、この上に形成してもよい。め
っき層の厚みは格別限定されないが、薄すぎると耐食性
や耐酸化性の低下が起こりやすくなるので、通常は、1.
０〜3.０μｍ程度にすることが好ましい。Prior to electroplating,
It is preferable to activate the surface by degreasing and pickling.
Further, the plating layer may be directly formed on the surface of the base material.
It is also possible to perform i plating or Cu plating to form a base plating layer having a thickness of about 0.2 to 1.0 μm, and then to form it on this. The thickness of the plating layer is not particularly limited, but if it is too thin, deterioration of corrosion resistance and oxidation resistance is likely to occur.
The thickness is preferably about 0 to 3.0 μm.
【００１２】つぎに、このめっき層を加熱溶融する。具
体的には、めっき層を形成した線材をリフロー炉に通
す。このときの加熱溶融条件は、基材は溶融させず、め
っき層のみを溶融させる条件であればよく、格別限定さ
れるものではない。通常、温度４００〜８００℃，処理
時間0.５〜１０秒に設定されることが好ましい。Next, this plating layer is heated and melted. Specifically, the wire having the plated layer is passed through a reflow furnace. The heating and melting conditions at this time are not particularly limited as long as the base material is not melted and only the plating layer is melted. Usually, it is preferable to set the temperature at 400 to 800 ° C. and the treatment time at 0.5 to 10 seconds.
【００１３】その後、溶融しているめっき層に対し再結
晶処理が施され、結晶粒径の制御が行われる。すなわ
ち、Ｔｍ−５０〜Ｔｍ（℃）の温度域で２秒間以上保持
したのち冷却する。この温度域を外れる場合、例えばＴ
ｍ（℃）より高い温度から冷却される場合は、溶融状態
からの冷却であるため、全体としては急冷状態になり、
その結果、再結晶構造は緻密となって耐食性や耐酸化性
が低下する。また、Ｔｍ−５０℃より低い温度から冷却
されると、再結晶時に粒径２μｍ以上のものが得られな
くなる。After that, the molten plating layer is recrystallized to control the crystal grain size. That is, the temperature is maintained in the temperature range of Tm-50 to Tm (° C.) for 2 seconds or more and then cooled. When it goes out of this temperature range, for example, T
When cooling from a temperature higher than m (° C), the cooling is from the molten state, so the overall state becomes a rapid cooling state.
As a result, the recrystallized structure becomes dense and corrosion resistance and oxidation resistance decrease. Further, when cooled from a temperature lower than Tm-50 ° C, particles having a grain size of 2 µm or more cannot be obtained during recrystallization.
【００１４】また、上記した温度域での保持時間が２秒
より短くなると、目的とする結晶粒径２μｍ以上の再結
晶構造が得にくくなり、耐食性や耐酸化性の向上効果は
期待できない。しかし、あまり長時間、上記温度域に保
持していても意味がないので、保持時間は２〜５秒であ
れば充分である。Further, if the holding time in the above temperature range is shorter than 2 seconds, it becomes difficult to obtain a target recrystallized structure having a crystal grain size of 2 μm or more, and the effect of improving corrosion resistance and oxidation resistance cannot be expected. However, it is meaningless to keep the temperature in the above temperature range for a very long time, so that the holding time of 2 to 5 seconds is sufficient.
【００１５】[0015]
【発明の実施例】電解脱脂槽，水洗槽，酸洗槽，水洗
槽，下地Ｃｕめっき槽，水洗槽，Ｓｎめっき槽，水洗
槽，熱風乾燥炉，リフロー炉，巻取り機がこの順序で配
置されている製造ラインに、表１で示した線材（線径0.
５mm）を連続的に供給し、表１に示した条件の各処理を
行ってＳｎめっき線を製造した。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An electrolytic degreasing tank, a water washing tank, a pickling tank, a water washing tank, a base Cu plating tank, a water washing tank, a Sn plating tank, a water washing tank, a hot air drying oven, a reflow oven and a winding machine are arranged in this order. In the production line, the wire rods (wire diameter 0.
5 mm) was continuously supplied, and each treatment under the conditions shown in Table 1 was performed to produce an Sn-plated wire.
【００１６】得られた各Ｓｎめっき線につき、下記の仕
様で、めっき層の結晶粒径（μｍ），接触抵抗（Ω）を
測定した。 結晶粒径：めっき層を、Ｈ2 ＳＯ4 ８０ｇ／ｌとＨ2 Ｏ
2 １０ml／ｌとから成る腐食液で５秒間エッチングした
のち、顕微鏡で観察。５０個結晶粒の平均値を測定。 接触抵抗：線材を、温度６０℃，相対湿度９５％の大気
中に表示の時間暴露したのち、各線材を、厚み0.０５mm
の導電ゴムに接触圧５０ｇで接触させ、１０mAの電流を
流して接触抵抗を測定。 以上の結果を一括して表１に示した。The crystal grain size (μm) and the contact resistance (Ω) of the plated layer were measured for each of the obtained Sn plated wires according to the following specifications. Crystal grain size: Plating layer, H 2 SO 4 80 g / l and H 2 O
2 After etching for 5 seconds with a corrosive liquid consisting of 10 ml / l, observe with a microscope. Measure the average value of 50 crystal grains. Contact resistance: Each wire rod is exposed to the atmosphere for 60 hours at a temperature of 60 ° C and relative humidity of 95% for the indicated time.
Contact the conductive rubber with the contact pressure of 50g and apply a current of 10mA to measure the contact resistance. The above results are collectively shown in Table 1.
【００１７】[0017]
【表１】 [Table 1]
【００１８】[0018]
【発明の効果】以上の説明で明らかなように、本発明の
Ｓｎめっき線は、従来のものに比べ、恒温恒湿試験後に
おける導電ゴムとの接触抵抗が大幅に低くなっている。
これは、Ｓｎめっき層の耐酸化性と耐食性が優れている
からである。このことは、めっき層のリフロー時に融点
から融点より５０℃低い温度域に２秒以上保持したのち
冷却することにより、めっき層の結晶構造を、結晶粒径
２μｍ以上の結晶粒で構成したことがもたらす効果であ
る。As is apparent from the above description, the Sn-plated wire of the present invention has a contact resistance with the conductive rubber after the constant temperature and humidity test which is significantly lower than that of the conventional one.
This is because the Sn plating layer has excellent oxidation resistance and corrosion resistance. This means that the crystal structure of the plating layer was composed of crystal grains having a crystal grain size of 2 μm or more by holding the temperature in the temperature range from the melting point to 50 ° C. lower than the melting point for 2 seconds or more at the time of reflow of the plating layer and then cooling. It is an effect to bring.
【００１９】本発明のＳｎめっき線は、上記した特性を
備えているので、安価な電気接点材料として有用であ
る。Since the Sn-plated wire of the present invention has the above-mentioned characteristics, it is useful as an inexpensive electrical contact material.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 裕二 東京都千代田区丸の内２丁目６番１号 古 河電気工業株式会社内 (72)発明者 川田 健二 東京都千代田区丸の内２丁目６番１号 古 河電気工業株式会社内 (72)発明者 三池 輝久 東京都大田区雪谷大塚町１番７号 アルプ ス電気株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yuji Suzuki 2-6-1, Marunouchi, Chiyoda-ku, Tokyo Furukawa Electric Co., Ltd. (72) Kenji Kawada 2-6-1, Marunouchi, Chiyoda-ku, Tokyo Furukawa Electric Co., Ltd. (72) Inventor Teruhisa Miike 1-7 Yukiya Otsukacho, Ota-ku, Tokyo Alps Electric Co., Ltd.
Claims (2)
晶粒径２μｍ以上のＳｎまたはＳｎ合金の層で被覆され
ていることを特徴とする電気接点用Ｓｎめっき線。1. A Sn-plated wire for electrical contacts, characterized in that the surface of a Cu or Cu alloy wire is covered with a layer of Sn or Sn alloy having a crystal grain size of 2 μm or more.
めっき法でＳｎまたはＳｎ合金のめっき層を形成し、前
記めっき層に加熱溶融処理を施し、ついで、前記めっき
層の融点をＴｍ（℃）としたとき、Ｔｍ〜Ｔｍ−５０
（℃）の温度域で２秒間以上保持したのち冷却すること
を特徴とする電気接点用Ｓｎめっき線の製造方法。2. A Sn or Sn alloy plating layer is formed on the surface of a Cu or Cu alloy wire by an electroplating method, the plating layer is heat-melted, and then the melting point of the plating layer is Tm (° C.). ), Tm to Tm-50
A method for producing an Sn-plated wire for an electric contact, which comprises holding the material in a temperature range of (° C.) for 2 seconds or more and then cooling it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5308152A JP2975246B2 (en) | 1993-12-08 | 1993-12-08 | Sn-plated wire for electrical contact and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5308152A JP2975246B2 (en) | 1993-12-08 | 1993-12-08 | Sn-plated wire for electrical contact and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07157893A true JPH07157893A (en) | 1995-06-20 |
| JP2975246B2 JP2975246B2 (en) | 1999-11-10 |
Family
ID=17977527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5308152A Expired - Fee Related JP2975246B2 (en) | 1993-12-08 | 1993-12-08 | Sn-plated wire for electrical contact and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2975246B2 (en) |
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| JP2005206869A (en) * | 2004-01-22 | 2005-08-04 | Sumitomo Electric Ind Ltd | Electrically conductive component, and its production method |
| JP2006185634A (en) * | 2004-12-24 | 2006-07-13 | Toshiba Corp | Contact member, contact, and electric apparatus |
| JP2006193778A (en) * | 2005-01-13 | 2006-07-27 | Fujitsu Ltd | Sn PLATING FILM FOR ELECTRONIC COMPONENT |
| JP2007262458A (en) * | 2006-03-27 | 2007-10-11 | Nikko Kinzoku Kk | WHISKER RESISTANT REFLOW Sn PLATING MATERIAL |
| JP2007321177A (en) * | 2006-05-30 | 2007-12-13 | Nikko Kinzoku Kk | COPPER ALLOY MATERIAL PLATED WITH REFLOW Sn HAVING EXCELLENT WHISKER-FORMING RESISTANCE, AND ELECTRONIC COMPONENT USING THE SAME |
| JP2008282802A (en) * | 2007-04-09 | 2008-11-20 | Furukawa Electric Co Ltd:The | Connector and metallic material for connector |
| WO2016031654A1 (en) * | 2014-08-25 | 2016-03-03 | 株式会社神戸製鋼所 | Conductive material for connection parts which has excellent minute slide wear resistance |
| JP2016044346A (en) * | 2014-08-25 | 2016-04-04 | 株式会社神戸製鋼所 | Conductive material for connection part excellent in minute slide abrasion resistance |
| JP2016044358A (en) * | 2014-08-27 | 2016-04-04 | 株式会社神戸製鋼所 | Conductive material for connection part excellent in minute slide abrasion resistance |
| USRE45987E1 (en) | 2003-09-11 | 2016-04-26 | Renesas Electronics Coporation | Electronic component and method of manufacturing the same |
-
1993
- 1993-12-08 JP JP5308152A patent/JP2975246B2/en not_active Expired - Fee Related
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| KR100405350B1 (en) * | 2000-01-18 | 2003-11-12 | 대아리드선주식회사 | Lead wire and it′s making method |
| US6773827B2 (en) | 2000-05-24 | 2004-08-10 | Murata Manufacturing Co., Ltd. | Electronic component, method for producing electronic component, and circuit board |
| USRE45987E1 (en) | 2003-09-11 | 2016-04-26 | Renesas Electronics Coporation | Electronic component and method of manufacturing the same |
| JP2005206869A (en) * | 2004-01-22 | 2005-08-04 | Sumitomo Electric Ind Ltd | Electrically conductive component, and its production method |
| JP2006185634A (en) * | 2004-12-24 | 2006-07-13 | Toshiba Corp | Contact member, contact, and electric apparatus |
| JP2006193778A (en) * | 2005-01-13 | 2006-07-27 | Fujitsu Ltd | Sn PLATING FILM FOR ELECTRONIC COMPONENT |
| JP2007262458A (en) * | 2006-03-27 | 2007-10-11 | Nikko Kinzoku Kk | WHISKER RESISTANT REFLOW Sn PLATING MATERIAL |
| JP2007321177A (en) * | 2006-05-30 | 2007-12-13 | Nikko Kinzoku Kk | COPPER ALLOY MATERIAL PLATED WITH REFLOW Sn HAVING EXCELLENT WHISKER-FORMING RESISTANCE, AND ELECTRONIC COMPONENT USING THE SAME |
| JP4602285B2 (en) * | 2006-05-30 | 2010-12-22 | Ｊｘ日鉱日石金属株式会社 | Copper alloy reflow Sn plating material excellent in whisker resistance and electronic component using the same |
| JP2008282802A (en) * | 2007-04-09 | 2008-11-20 | Furukawa Electric Co Ltd:The | Connector and metallic material for connector |
| WO2016031654A1 (en) * | 2014-08-25 | 2016-03-03 | 株式会社神戸製鋼所 | Conductive material for connection parts which has excellent minute slide wear resistance |
| JP2016044346A (en) * | 2014-08-25 | 2016-04-04 | 株式会社神戸製鋼所 | Conductive material for connection part excellent in minute slide abrasion resistance |
| JP2016044358A (en) * | 2014-08-27 | 2016-04-04 | 株式会社神戸製鋼所 | Conductive material for connection part excellent in minute slide abrasion resistance |
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