JPH07106642A - Thermoelectric power generation module - Google Patents
Thermoelectric power generation moduleInfo
- Publication number
- JPH07106642A JPH07106642A JP5251752A JP25175293A JPH07106642A JP H07106642 A JPH07106642 A JP H07106642A JP 5251752 A JP5251752 A JP 5251752A JP 25175293 A JP25175293 A JP 25175293A JP H07106642 A JPH07106642 A JP H07106642A
- Authority
- JP
- Japan
- Prior art keywords
- thermoelectric
- type
- thermoelectric semiconductor
- power generation
- generation module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Hybrid Cells (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、熱を直接電気に変化
する熱電発電モジュールに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric power generation module that directly converts heat into electricity.
【０００２】[0002]
【従来の技術】従来、熱電発電モジュールとしては、図
３に示すものが知られている。この熱電発電モジュール
は、セラミック製等の絶縁性の集熱板１、電極２、ｐ型
・ｎ型の熱電半導体３、接着層４、放熱板５及び定電圧
装置６からなる。ここで、前記熱電半導体３及び電極２
により熱電半導体素子が構成される。こうした構成の熱
電発電モジュールにおいて、高温熱源７から低温熱源８
へ熱流９が流れるとき、ｐ型熱電半導体では高温側から
低温側へ正の電荷を持つ正孔が拡散し、ｎ型熱電半導体
では負の電荷を持つ電子が拡散する。そのため、ｐ型・
ｎ型の熱電半導体３を対にして連結することにより、電
力出力が発生し定電圧装置を通じて定電力装置を通じて
電力10を取り出すことができる。2. Description of the Related Art Conventionally, a thermoelectric power generation module shown in FIG. 3 has been known. This thermoelectric generation module comprises an insulating heat collecting plate 1 made of ceramic or the like, an electrode 2, a p-type / n-type thermoelectric semiconductor 3, an adhesive layer 4, a heat radiating plate 5, and a constant voltage device 6. Here, the thermoelectric semiconductor 3 and the electrode 2
A thermoelectric semiconductor element is constituted by. In the thermoelectric power generation module having such a configuration, the high temperature heat source 7 to the low temperature heat source 8
When the heat flow 9 flows into the p-type thermoelectric semiconductor, holes having positive charges diffuse from the high temperature side to the low temperature side, and electrons having negative charges diffuse in the n-type thermoelectric semiconductor. Therefore, p-type
By connecting the n-type thermoelectric semiconductors 3 in pairs, a power output is generated and the power 10 can be taken out through the constant voltage device through the constant voltage device.
【０００３】[0003]
【発明が解決しようとする課題】ところで、従来の熱電
発電モジュールにおいては、高温部の電極部分では熱に
より、雰囲気の気圧が宇宙空間のように低い圧力では、
熱電半導体３は成分が蒸発し、熱電半導体３の性能（発
電出力）が低下する問題がある。By the way, in the conventional thermoelectric power generation module, due to the heat at the electrode part of the high temperature part, when the atmospheric pressure is low such as outer space,
The thermoelectric semiconductor 3 has a problem that components are evaporated and the performance (power generation output) of the thermoelectric semiconductor 3 is deteriorated.
【０００４】これを防ぐために、溶融シリカガラスをコ
ーティングしている。しかし、溶融シリカガラスの軟化
点は８００℃以上であり、１０００℃で使用する熱電半
導体では、成分が蒸発し、性能が劣化する問題があっ
た。To prevent this, fused silica glass is coated. However, the softening point of fused silica glass is 800 ° C. or higher, and the thermoelectric semiconductor used at 1000 ° C. has a problem that components evaporate and performance deteriorates.
【０００５】この発明はこうした事情を考慮してなされ
たもので、アルミナアルコキシドをコーティングし、ア
ルミナ層を熱電半導体表面に形成させることにより、熱
電半導体の材料成分の蒸発を防ぐことができる熱電発電
モジュールを提供することを目的とする。The present invention has been made in consideration of such circumstances, and a thermoelectric power generation module capable of preventing evaporation of material components of the thermoelectric semiconductor by coating an alumina alkoxide and forming an alumina layer on the surface of the thermoelectric semiconductor. The purpose is to provide.
【０００６】[0006]
【課題を解決するための手段】この発明は、高温の熱か
ら直接電気を取り出す熱電発電モジュールにおいて、側
面にアルミナアルコキシドをコーティングしたｐ型・ｎ
型の熱電半導体及びこの熱電半導体の両側に接着層を介
して電極を有した熱電半導体素子と、この熱電半導体素
子の一端側に設けられた集熱板と、前記熱電半導体素子
の他端側に設けられた放熱板と、前記熱電半導体素子の
電極に電気的に接続された定電圧装置とを具備すること
を特徴とする熱電発電モジュールである。SUMMARY OF THE INVENTION The present invention is a thermoelectric power generation module for directly extracting electricity from high temperature heat, and is a p-type n-type whose side surface is coated with alumina alkoxide.
Type thermoelectric semiconductor and a thermoelectric semiconductor element having electrodes on both sides of the thermoelectric semiconductor via an adhesive layer, a heat collecting plate provided on one end side of the thermoelectric semiconductor element, and on the other end side of the thermoelectric semiconductor element A thermoelectric power generation module comprising: a heat dissipation plate provided; and a constant voltage device electrically connected to an electrode of the thermoelectric semiconductor element.
【０００７】[0007]
【作用】この発明においては、ｐ型・ｎ型の熱電半導体
の側面にアルミナアルコキシドをコーティングすること
により、熱電半導体の材料成分の蒸発を防ぐことができ
る。In the present invention, by coating the side surfaces of the p-type and n-type thermoelectric semiconductors with alumina alkoxide, it is possible to prevent evaporation of the material components of the thermoelectric semiconductors.
【０００８】[0008]
【実施例】以下、この発明の一実施例を図面を参照して
説明する。 （実施例１）図１を参照する。図中の符号21は、複数の
ｐ型あるいはｎ型の熱電半導体である。これらの熱電半
導体21の側面には、アルミナアルコキシド（アルミナ
層）22がコーティングされている。前記各熱電半導体21
の高温熱源側には、接着層23を介して電極24が隣り合う
ｐ型の熱電半導体とｎ型の熱電半導体とを対にして複数
個設けられている。これらの電極24には、セラミック製
等の絶縁性の集熱板25が接続されている。前記熱電半導
体21の低温熱源側には、接着層23を介して電極26が任意
のｐ型の熱電半導体，ｎ型の熱電半導体，及び所定のｐ
型の熱電半導体とｎ型の熱電半導体とを対にして複数個
設けられている。これらの電極26には、放熱板27が接続
されている。前記電極26の内、任意のｐ型の熱電半導体
21とｎ型の熱電半導体21には定電圧装置28が接続されて
いる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. Example 1 Reference is made to FIG. Reference numeral 21 in the figure denotes a plurality of p-type or n-type thermoelectric semiconductors. The side surfaces of these thermoelectric semiconductors 21 are coated with alumina alkoxide (alumina layer) 22. Each thermoelectric semiconductor 21
On the high-temperature heat source side, a plurality of electrodes 24 are provided with a pair of a p-type thermoelectric semiconductor and an n-type thermoelectric semiconductor adjacent to each other via an adhesive layer 23. An insulating heat collecting plate 25 made of ceramic or the like is connected to these electrodes 24. On the low temperature heat source side of the thermoelectric semiconductor 21, an electrode 26 has an arbitrary p-type thermoelectric semiconductor, an n-type thermoelectric semiconductor, and a predetermined p-type via an adhesive layer 23.
Type thermoelectric semiconductors and n-type thermoelectric semiconductors are provided in pairs. A heat sink 27 is connected to these electrodes 26. Of the electrodes 26, any p-type thermoelectric semiconductor
A constant voltage device 28 is connected to 21 and the n-type thermoelectric semiconductor 21.
【０００９】こうした構成の熱電発電モジュールにおい
て、熱電半導体21へのアルミナ層22の形成は図２のよう
にして行なう。まず、熱電半導体21の表面をアセトンで
脱脂洗浄し、不必要なコーティング面がないようにマス
キングする（図２（Ａ）参照）。次に、熱電半導体21
を、アルミナアルコキシドとＣＨ3 ＯＨを１：４で混合
した溶液に浸し、引き上げる（図２（Ｂ）参照）。つづ
いて、取り出した後、真空炉で５００℃３０分加熱し、
硬化処理を行なう（図２（Ｃ）参照）。In the thermoelectric power generation module having such a structure, the alumina layer 22 is formed on the thermoelectric semiconductor 21 as shown in FIG. First, the surface of the thermoelectric semiconductor 21 is degreased and washed with acetone and masked so that there is no unnecessary coating surface (see FIG. 2A). Next, the thermoelectric semiconductor 21
Is immersed in a solution in which alumina alkoxide and CH 3 OH are mixed at a ratio of 1: 4, and is pulled up (see FIG. 2 (B)). Then, after taking out, it is heated in a vacuum furnace at 500 ° C for 30 minutes,
Curing treatment is performed (see FIG. 2C).
【００１０】上記実施例に係る熱電発電モジュールによ
れば、ｐ型あるいはｎ型の熱電半導体21の側面に、アル
ミナ層22をコーティングした構成になっているため、熱
電半導体21の材料成分の蒸発を防ぐことができる。事
実、真空中で高温源を１０００℃に、低温源を０℃に維
持して１０００時間、アルミナアルコキシドを使ってコ
ーティングした発電モジュール（本発明）とコーティン
グ処理を行わない場合（従来）の発電出力を下記「表
１」に示す。According to the thermoelectric power generation module according to the above-mentioned embodiment, since the side surface of the p-type or n-type thermoelectric semiconductor 21 is coated with the alumina layer 22, evaporation of the material components of the thermoelectric semiconductor 21 is prevented. Can be prevented. In fact, the power output of a power generation module (invention) coated with alumina alkoxide for 1000 hours while maintaining a high temperature source at 1000 ° C. and a low temperature source at 0 ° C. in a vacuum and a case without coating treatment (conventional) Is shown in "Table 1" below.
【００１１】[0011]
【表１】 表１から明らかのように、アルミナアルコキシドによる
コーティング処理を行なった熱電発電モジュールの発電
出力が従来の場合と比べて発電出力の低下が少な意個と
が確認された。この原因は、熱電半導体成分の蒸発が防
止されているためである。[Table 1] As is clear from Table 1, it was confirmed that the power generation output of the thermoelectric power generation module that had been subjected to the coating treatment with the alumina alkoxide was slightly lower than that of the conventional case. This is because evaporation of thermoelectric semiconductor components is prevented.
【００１２】[0012]
【発明の効果】以上詳述したようにこの発明によれば、
アルミナアルコキシドをコーティングし、アルミナ層を
熱電半導体表面に形成させることにより、熱電半導体の
材料成分の蒸発を防ぐことができる熱電発電モジュール
を提供できる。As described above in detail, according to the present invention,
By coating alumina alkoxide and forming an alumina layer on the surface of the thermoelectric semiconductor, it is possible to provide a thermoelectric power generation module capable of preventing evaporation of material components of the thermoelectric semiconductor.
【図１】この発明の実施例１に係る熱電発電モジュール
の説明図。FIG. 1 is an explanatory diagram of a thermoelectric power generation module according to a first embodiment of the present invention.
【図２】図１の熱電発電モジュールにおける熱電半導体
表面にアルミナ層を形成する方法の説明図。2 is an explanatory view of a method of forming an alumina layer on a surface of a thermoelectric semiconductor in the thermoelectric power generation module of FIG.
【図３】従来の熱電発電モジュールの説明図。FIG. 3 is an explanatory diagram of a conventional thermoelectric power generation module.
21…熱電半導体、 22…アルミナ層、
23…接着層、24，26…電極、 25…集熱板、
27…放熱板、28…定電圧装置。21 ... Thermoelectric semiconductor, 22 ... Alumina layer,
23 ... Adhesive layer, 24, 26 ... Electrode, 25 ... Heat collecting plate,
27 ... Heat sink, 28 ... Constant voltage device.
Claims (1)
電モジュールにおいて、側面にアルミナアルコキシドを
コーティングしたｐ型・ｎ型の熱電半導体及びこの熱電
半導体の両側に接着層を介して電極を有した熱電半導体
素子と、この熱電半導体素子の一端側に設けられた集熱
板と、前記熱電半導体素子の他端側に設けられた放熱板
と、前記熱電半導体素子の電極に電気的に接続された定
電圧装置とを具備することを特徴とする熱電発電モジュ
ール。1. A thermoelectric power generation module for directly extracting electricity from high-temperature heat, in which p-type and n-type thermoelectric semiconductors whose sides are coated with alumina alkoxide, and thermoelectric semiconductors having electrodes on both sides of the thermoelectric semiconductor with adhesive layers interposed therebetween. A semiconductor element, a heat collecting plate provided on one end side of the thermoelectric semiconductor element, a heat radiating plate provided on the other end side of the thermoelectric semiconductor element, and a constant electrically connected to an electrode of the thermoelectric semiconductor element. A thermoelectric power generation module comprising a voltage device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25175293A JP3188070B2 (en) | 1993-10-07 | 1993-10-07 | Thermoelectric generation module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25175293A JP3188070B2 (en) | 1993-10-07 | 1993-10-07 | Thermoelectric generation module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07106642A true JPH07106642A (en) | 1995-04-21 |
| JP3188070B2 JP3188070B2 (en) | 2001-07-16 |
Family
ID=17227401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25175293A Expired - Fee Related JP3188070B2 (en) | 1993-10-07 | 1993-10-07 | Thermoelectric generation module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3188070B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100345823B1 (en) * | 1998-11-25 | 2002-07-24 | 마츠시다 덴코 가부시키가이샤 | Thermoelectric Module |
| WO2006006884A1 (en) * | 2004-07-08 | 2006-01-19 | Gennadiy Gusamovich Gromov | Thermoelectric module |
| EP2460182A1 (en) * | 2009-07-27 | 2012-06-06 | Corning Inc. | A coating for thermoelectric materials and a device containing the same |
| JP2012518287A (en) * | 2009-02-19 | 2012-08-09 | エミテック ゲゼルシヤフト フユア エミツシオンス テクノロギー ミツト ベシユレンクテル ハフツング | Thermoelectric device |
| JP2013545298A (en) * | 2010-10-27 | 2013-12-19 | ビーエーエスエフ ソシエタス・ヨーロピア | Thermoelectric module and manufacturing method thereof |
| EP2770549A3 (en) * | 2013-02-20 | 2014-10-08 | MAHLE Behr GmbH & Co. KG | Thermoelectric module |
-
1993
- 1993-10-07 JP JP25175293A patent/JP3188070B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100345823B1 (en) * | 1998-11-25 | 2002-07-24 | 마츠시다 덴코 가부시키가이샤 | Thermoelectric Module |
| DE19946700B4 (en) * | 1998-11-25 | 2007-12-06 | Matsushita Electric Works, Ltd., Kadoma | Thermoelectric modules and method for their production |
| WO2006006884A1 (en) * | 2004-07-08 | 2006-01-19 | Gennadiy Gusamovich Gromov | Thermoelectric module |
| JP2012518287A (en) * | 2009-02-19 | 2012-08-09 | エミテック ゲゼルシヤフト フユア エミツシオンス テクノロギー ミツト ベシユレンクテル ハフツング | Thermoelectric device |
| US9184365B2 (en) | 2009-02-19 | 2015-11-10 | Emitec Gesellschaft Fuer Emissionstechnologie Mbh | Thermoelectric device |
| EP2460182A1 (en) * | 2009-07-27 | 2012-06-06 | Corning Inc. | A coating for thermoelectric materials and a device containing the same |
| EP2460182A4 (en) * | 2009-07-27 | 2014-01-01 | Corning Inc | A coating for thermoelectric materials and a device containing the same |
| JP2013545298A (en) * | 2010-10-27 | 2013-12-19 | ビーエーエスエフ ソシエタス・ヨーロピア | Thermoelectric module and manufacturing method thereof |
| EP2770549A3 (en) * | 2013-02-20 | 2014-10-08 | MAHLE Behr GmbH & Co. KG | Thermoelectric module |
| US10468575B2 (en) | 2013-02-20 | 2019-11-05 | MAHLE Behr GmbH & Co. KG | Thermoelectric module |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3188070B2 (en) | 2001-07-16 |
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Legal Events
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|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20010403 |
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| LAPS | Cancellation because of no payment of annual fees |