JPH069182B2 - Projection exposure method - Google Patents
Projection exposure methodInfo
- Publication number
- JPH069182B2 JPH069182B2 JP60016510A JP1651085A JPH069182B2 JP H069182 B2 JPH069182 B2 JP H069182B2 JP 60016510 A JP60016510 A JP 60016510A JP 1651085 A JP1651085 A JP 1651085A JP H069182 B2 JPH069182 B2 JP H069182B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mask
- exposure method
- strain
- detected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 19
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims description 2
- 230000008602 contraction Effects 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は、ホトレジスト等の感光性防蝕剤を用いて基板
上にマスクまたはレテイクルのパターンを転写する際に
使用される投影露光方法に関し、特に、基板上のパター
ンとマスクまたはレテイクルパターンとを高精度に合わ
せることを必要とする場合に好適な投影露光方法に関す
る。Description: FIELD OF THE INVENTION The present invention relates to a projection exposure method used when transferring a pattern of a mask or reticle onto a substrate using a photosensitive anticorrosive agent such as photoresist, and in particular, The present invention relates to a projection exposure method suitable when it is necessary to match a pattern on a substrate with a mask or reticle pattern with high accuracy.
従来の投影露光方法は、第１図に示すように、基板１上
の２つのターゲツトパターン２、３のＸ、Ｙ位置を検出
し、これにマスクまたはレテイクル４上のターゲツトパ
ターン５、６を合わせることにより、両者を整合させて
いた。このように、基板上で左右方向をＸ、上下方向を
Ｙとした場合にＸ、Ｙ方向それぞれに２点のターゲツト
位置を検出し、Ｘ方向、Ｙ方向、回転およびＸまたはＹ
方向の基板パターンの伸縮歪を検出可能な機構の場合、
Ｘ方向とＹ方向の伸縮歪が等しくないと、基板全面での
補正が正しく行なわれず、またＸ方向とＹ方向の直角度
の狂いを補正することが不可能であるという欠点を有し
ていた。In the conventional projection exposure method, as shown in FIG. 1, the X and Y positions of two target patterns 2 and 3 on the substrate 1 are detected, and the target patterns 5 and 6 on the mask or reticle 4 are aligned with them. By doing so, both were matched. Thus, when the horizontal direction is X and the vertical direction is Y on the substrate, two target positions are detected in each of the X and Y directions, and the X direction, the Y direction, the rotation, and the X or Y direction are detected.
In the case of a mechanism that can detect the expansion and contraction strain of the board pattern in the direction,
If the expansion and contraction strains in the X direction and the Y direction are not equal, the correction is not performed correctly on the entire surface of the substrate, and it is impossible to correct the deviation of the squareness between the X direction and the Y direction. .
本発明の目的は、Ｘ方向、Ｙ方向の伸縮歪およびＸＹ方
向の直交度歪を検出し、補正することができ、マスクま
たはレテイクルと基板上のパターンとの重ね合せ精度を
高め得る新規な投影露光方法を提供することにある。An object of the present invention is to provide a novel projection that can detect and correct expansion and contraction strains in the X and Y directions and orthogonality strains in the XY direction, and can improve overlay accuracy of a mask or reticle and a pattern on a substrate. An object is to provide an exposure method.
本発明の投影露光方法は、非直線上に配置された少くと
も３点のターゲツトパターンの位置を検出し、ウエーハ
のＸ、Ｙ両方向の伸縮歪およびＸＹの直交度歪を検出す
る機構を有し、かつその検出結果に応じ露光時に基板ま
たはマスク若しくはレテイクルの移動距離を修正するこ
とにより前記歪を補正する棧構を具備すること特徴とす
る。The projection exposure method of the present invention has a mechanism for detecting the positions of at least three target patterns arranged on a non-linear line and detecting the stretching strain in both the X and Y directions of the wafer and the XY orthogonality strain. Further, the invention is characterized by further comprising a structure for correcting the distortion by correcting the moving distance of the substrate, the mask or the reticle during exposure according to the detection result.
以下、本発明の実施例を図面により説明する。第２図は
本発明の一実施例を示すもので、基板１０上には３点の
ターゲツトパターン１１、１２、１３が設けられてお
り、これにマスクまたはレテイクル上のターゲツトパタ
ーン１４、１５、１６を合わせる。ターゲツトパターン
１１、１２、１３は同一直線上になく配置され、ターゲ
ツトパターン１１、１２間の距離Ａを検出することによ
り、Ｘ方向の伸縮歪を検出でき、またターゲツトパター
ン１１、１２を結ぶ直線とターゲツトパターン１３との
距離Ｂを求めるとによりＹ方向の伸縮歪を測定できる。
更にターゲツトパターン１３について検出されたＸ座標
と、ターゲツト１１、１２の測定から算出される設定上
のターゲツトパターン１３のＸ座標との差より、Ｘ、Ｙ
方向の直交度を検出できる。Embodiments of the present invention will be described below with reference to the drawings. FIG. 2 shows an embodiment of the present invention, in which three target patterns 11, 12, 13 are provided on a substrate 10, and target patterns 14, 15, 16 on a mask or a reticle are provided thereon. Match. The target patterns 11, 12, and 13 are not arranged on the same straight line, and by detecting the distance A between the target patterns 11 and 12, the expansion / contraction strain in the X direction can be detected, and the straight lines connecting the target patterns 11 and 12 can be detected. By obtaining the distance B from the target pattern 13, the stretching strain in the Y direction can be measured.
Further, from the difference between the X coordinate detected for the target pattern 13 and the X coordinate of the set target pattern 13 calculated from the measurement of the targets 11 and 12, X, Y
The orthogonality of directions can be detected.
第３図は本発明の他の実施例を示すもので、基板２０上
には５個のターゲツトパターン２１、２２、２３、２
４、２５が設けられ、これにマスクまたはレテイクル上
のターゲツトパターン２６、２７、２８、２９、３０を
合わせるようになつている。Ｘ方向のウエーハの伸縮
は、ターゲツトパターン２１、２５間、２２、２５間の
距離により求められ、またＹ方向の伸縮はターゲツトパ
ターン２３、２５間、２４、２５間の距離を検出するこ
とにより測定できる。更に、ターゲツトパターン２１、
２５を基準とし、∠２１、２５、２３，∠２１、２５、
２２，∠２１、２５、２４を求めることにより、それぞ
れの方向の角度歪を検出することができる。このように
して求められた歪データに応じ、露光時に、基板または
マスクかレテイクルの移動距離を修正することにより、
前記歪を補正することができる。FIG. 3 shows another embodiment of the present invention. Five target patterns 21, 22, 23, 2 are formed on the substrate 20.
4, 25 are provided to which the target patterns 26, 27, 28, 29, 30 on the mask or reticle are aligned. The expansion and contraction of the wafer in the X direction is obtained by the distance between the target patterns 21, 25, 22 and 25, and the expansion and contraction in the Y direction is measured by detecting the distance between the target patterns 23, 25 and 24, 25. it can. In addition, the target pattern 21,
25 as a reference, ∠21, 25, 23, ∠21, 25,
By obtaining 22, ∠21, 25, 24, the angular distortion in each direction can be detected. According to the strain data obtained in this way, by correcting the moving distance of the substrate or mask or reticle during exposure,
The distortion can be corrected.
本発明によれば、基板上のＸ方向、Ｙ方向の伸縮歪と
Ｘ、Ｙ方向の直交度歪を従来の方法より一段と精度良く
検出し補正できる。従つて、マスクまたはレテイクルと
基板上のパターンとの重ね合わせ精度を著しく向上させ
ることができる。According to the present invention, the expansion and contraction strains in the X and Y directions and the orthogonality strains in the X and Y directions on the substrate can be detected and corrected with higher accuracy than the conventional method. Therefore, the overlay accuracy of the mask or reticle and the pattern on the substrate can be significantly improved.
第１図は従来の方法におけるマスクまたはレテイクルと
基板上のターゲツトパターンの配置を示す平面説明図、
第２図は本発明の一実施例におけるターゲツトパターン
の配置を示す平面説明図、第３図は同じく他の実施例の
ターゲツトパターンの配置を示す平面説明図である。 １０、２０……基板、 １１、１２、１３、２１、２２、２３、２４、２５……
基板上のターゲツトパターン、 １４、１５、１６、２６、２７、２８、２９、３０……
マスクまたはレテイクル上のターゲツトパターン。FIG. 1 is an explanatory plan view showing the arrangement of a mask or reticle and a target pattern on a substrate in a conventional method,
FIG. 2 is an explanatory plan view showing the arrangement of target patterns in one embodiment of the present invention, and FIG. 3 is an explanatory plan view showing the arrangement of target patterns in another embodiment. 10, 20, ... Substrate, 11, 12, 13, 21, 22, 23, 24, 25 ...
Target pattern on the substrate, 14, 15, 16, 26, 27, 28, 29, 30 ...
Target pattern on a mask or reticle.
Claims (1)
たはレテイクルのパターンを転写する投影露光方法にお
いて、上記基板上に非直線上に配置された少くとも３点
のターゲツトパターンの位置を検出し上記基板のＸ，Ｙ
両方向の伸縮歪およびＸＹの直交度歪を検出し、この検
出結果に応じ露光時に上記基板またはマスク若しくはレ
テイクルの移動距離を修正することにより前記伸縮歪及
び直交度歪を補正することを特徴とする投影露光方法。1. A projection exposure method for transferring a mask or reticle pattern onto a substrate coated with a photosensitive anticorrosion agent, wherein the positions of at least three target patterns arranged non-linearly on the substrate are detected. The X and Y of the above substrate
The stretching strain and the orthogonality strain are detected by detecting the stretching strain in both directions and the XY orthogonality strain, and correcting the moving distance of the substrate or the mask or the reticle during exposure according to the detection result. Projection exposure method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60016510A JPH069182B2 (en) | 1985-02-01 | 1985-02-01 | Projection exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60016510A JPH069182B2 (en) | 1985-02-01 | 1985-02-01 | Projection exposure method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9180894A Division JPH10161324A (en) | 1997-07-07 | 1997-07-07 | Projection exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61177724A JPS61177724A (en) | 1986-08-09 |
| JPH069182B2 true JPH069182B2 (en) | 1994-02-02 |
Family
ID=11918266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60016510A Expired - Lifetime JPH069182B2 (en) | 1985-02-01 | 1985-02-01 | Projection exposure method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH069182B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4939774B2 (en) * | 2005-06-22 | 2012-05-30 | 本田技研工業株式会社 | Roller hemming apparatus and roller hemming method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51111076A (en) * | 1975-03-26 | 1976-10-01 | Hitachi Ltd | Exposure device |
| JPS5954225A (en) * | 1982-09-21 | 1984-03-29 | Hitachi Ltd | Projection exposure method |
-
1985
- 1985-02-01 JP JP60016510A patent/JPH069182B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51111076A (en) * | 1975-03-26 | 1976-10-01 | Hitachi Ltd | Exposure device |
| JPS5954225A (en) * | 1982-09-21 | 1984-03-29 | Hitachi Ltd | Projection exposure method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61177724A (en) | 1986-08-09 |
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