JPH0685012A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH0685012A
JPH0685012A JP4236985A JP23698592A JPH0685012A JP H0685012 A JPH0685012 A JP H0685012A JP 4236985 A JP4236985 A JP 4236985A JP 23698592 A JP23698592 A JP 23698592A JP H0685012 A JPH0685012 A JP H0685012A
Authority
JP
Japan
Prior art keywords
wire
electrode
electrodes
welded
bonding method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4236985A
Other languages
Japanese (ja)
Other versions
JP3252475B2 (en
Inventor
Maki Tsuji
真樹 辻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP23698592A priority Critical patent/JP3252475B2/en
Publication of JPH0685012A publication Critical patent/JPH0685012A/en
Application granted granted Critical
Publication of JP3252475B2 publication Critical patent/JP3252475B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To provide a wire bonding method by which a wire can be welded properly and securely on the surface of electrodes for bonding even when the electrodes made of metal having high flatness on the surface thereof is used. CONSTITUTION:A pressing tool 10 is simultaneously brought into contact with the surfaces of respective electrodes 6 arranged in an electrode forming part so that the surfaces of the electrodes 6 may be roughened, and then a wire 7 passing through a capillary 12 is successively pressed on the surfaces of the electrodes 6 and the wire 7 is welded and bonded on the electrodes 6 through ultrasonic vibration.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は電極の表面に導電用のワ
イヤを接着させるワイヤボンディング方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method for bonding a conductive wire to the surface of an electrode.

【０００２】[0002]

【従来の技術】配線基板や半導体チップの電極に導電用
のワイヤを超音波を用いて接着させるワイヤボンディン
グ方法が知られている。このワイヤボンディング方法
は、金やアルミニウム等の極細のワイヤを通したキャピ
ラリーを用いてそのワイヤを電極の上に押し付け、この
状態でキャピラリーに超音波振動を与え、この超音波振
動による摩擦熱でワイヤを電極に溶着して接着させる方
法である。2. Description of the Related Art There is known a wire bonding method in which a conductive wire is adhered to an electrode of a wiring board or a semiconductor chip by using ultrasonic waves. This wire bonding method uses a capillary through which an ultrafine wire such as gold or aluminum is pressed, and presses the wire onto the electrode.In this state, ultrasonic vibration is applied to the capillary, and the friction heat generated by this ultrasonic vibration causes the wire to move. Is a method of welding and adhering to the electrode.

【０００３】[0003]

【発明が解決しようとする課題】このような方法により
ワイヤをＡｌ等からなる電極に溶着して接着させる場
合、超音波振動による充分な摩擦熱が得られず、電極に
対するワイヤの接着が不充分となる。この問題を解決す
るためには、キャピラリーの加圧力や超音波の出力を高
めることが考えられるが、このような手段を採用する
と、電極の表面に大きなダメージを与えてしまい、むし
ろワイヤの接着不良が生じ易くなってしまう。When a wire is welded and adhered to an electrode made of Al or the like by such a method, sufficient frictional heat due to ultrasonic vibration cannot be obtained, resulting in insufficient adhesion of the wire to the electrode. Becomes In order to solve this problem, it is conceivable to increase the pressure applied to the capillary and the output of ultrasonic waves. However, if such a means is adopted, the surface of the electrode will be seriously damaged, and the wire will not adhere properly. Is likely to occur.

【０００４】本発明はこのような点に着目してなされた
もので、その目的とするところは、表面の平滑度が高い
金属からなる電極を用いた場合であっても、その電極の
表面に良好かつ確実にワイヤを溶着して接着させること
ができるワイヤボンディング方法を提供することにあ
る。The present invention has been made by paying attention to such a point, and an object of the present invention is to provide an electrode on the surface of the electrode even when an electrode made of a metal having a high surface smoothness is used. It is to provide a wire bonding method capable of satisfactorily and reliably welding and adhering a wire.

【０００５】[0005]

【課題を解決するための手段】本発明はこのような目的
を達成するために、電極形成部に配列形成された各電極
の表面に一括して加圧ツールを押し当ててこれら電極の
表面を粗面化し、こののちこれら電極の表面に、順次キ
ャピラリーに通したワイヤを押し付け、このワイヤを超
音波振動により前記電極に溶着して接着させるようにし
たものである。In order to achieve such an object, the present invention presses a pressing tool collectively on the surface of each electrode arrayed in the electrode forming portion so that the surfaces of these electrodes are brought into contact with each other. The surface is roughened, and then the wires passed through the capillaries are pressed against the surfaces of these electrodes, and the wires are welded and adhered to the electrodes by ultrasonic vibration.

【０００６】[0006]

【作用】このようなワイヤボンディング方法において
は、各電極の表面が加圧ツールの加圧面により予め粗面
化され、したがって電極の表面にワイヤを押し付け、超
音波振動によりこのワイヤを溶着させる際に、電極の表
面とワイヤとの間に有効に摩擦熱が発生し、したがって
ワイヤを良好にかつ確実に電極に溶着させることが可能
となる。In such a wire bonding method, the surface of each electrode is roughened in advance by the pressure surface of the pressure tool, and therefore, when the wire is pressed against the surface of the electrode and the wires are welded by ultrasonic vibration. As a result, frictional heat is effectively generated between the surface of the electrode and the wire, so that the wire can be satisfactorily and reliably welded to the electrode.

【０００７】[0007]

【実施例】以下、本発明の一実施例について図面を参照
して説明する。図４において、符号１は画像を表示する
液晶パネル、２はこの液晶パネル１を駆動する駆動回路
が形成されたフィルム基板を示している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. In FIG. 4, reference numeral 1 is a liquid crystal panel for displaying an image, and 2 is a film substrate on which a drive circuit for driving the liquid crystal panel 1 is formed.

【０００８】液晶パネル１は、ガラス等からなる一対の
透明基板３，４を重ね合わせ、かつその相互間に液晶
（図示せず）を封入してなる。そして一方の透明基板３
が他方の透明基板４の端縁から延出し、この延出部分の
上にフィルム基板２が接着剤を介して取り付けられてい
る。The liquid crystal panel 1 is formed by stacking a pair of transparent substrates 3 and 4 made of glass or the like and enclosing a liquid crystal (not shown) between them. And one transparent substrate 3
Extends from the edge of the other transparent substrate 4, and the film substrate 2 is attached via an adhesive on the extended portion.

【０００９】液晶パネル１における一方の透明基板３の
上にはアルミニウム等からなる電極５が配列形成され、
またフィルム基板２の上にはアルミニウム等からなる電
極６が前記液晶パネル１の各電極５に対応するように配
列形成されている。そしてフィルム基板２の各電極６と
液晶パネル１の各電極５とがワイヤボンディングによる
ワイヤ７を介してそれぞれ接続されている。Electrodes 5 made of aluminum or the like are arrayed on one transparent substrate 3 of the liquid crystal panel 1,
Electrodes 6 made of aluminum or the like are arranged on the film substrate 2 so as to correspond to the electrodes 5 of the liquid crystal panel 1. The electrodes 6 of the film substrate 2 and the electrodes 5 of the liquid crystal panel 1 are connected to each other via wires 7 formed by wire bonding.

【００１０】図１に示す１０は昇降可能に設けられた金
属製の加圧ツールで、この加圧ツール１０の下端面は一
定の幅を有する水平な加圧面１１となっており、この加
圧面１１に図２に示すように微細な凹凸が施されてい
る。Reference numeral 10 shown in FIG. 1 is a metal pressure tool that is provided so as to be able to move up and down. The lower end surface of the pressure tool 10 is a horizontal pressure surface 11 having a constant width. As shown in FIG. 2, 11 is provided with fine irregularities.

【００１１】ワイヤボンディングを行なう際には、まず
図１および図２に示すように、フィルム基板２における
電極６の上方に加圧ツール１０を配置してこの加圧ツー
ル１０の加圧面１１を電極６の配列形成領域に対向させ
る。When performing wire bonding, first, as shown in FIGS. 1 and 2, the pressure tool 10 is arranged above the electrode 6 on the film substrate 2, and the pressure surface 11 of the pressure tool 10 is used as an electrode. It faces the array formation region of No. 6.

【００１２】この状態で加圧ツール１０を下降し、加圧
面１１を一定の圧力で電極６の配列形成領域の上に押し
当て、この押し当てにより加圧面１１の凹凸で各電極６
の表面を一括して粗面化させる。In this state, the pressing tool 10 is lowered and the pressing surface 11 is pressed against the array forming region of the electrodes 6 with a constant pressure.
The surface of is roughened at once.

【００１３】次に、同様に、液晶パネル１における電極
５の配列形成領域に加圧ツール１０の加圧面１１を対向
させ、この加圧面１１の凹凸で各電極５の表面を一括し
て粗面化させる。Next, similarly, the pressing surface 11 of the pressing tool 10 is made to face the array forming region of the electrodes 5 in the liquid crystal panel 1, and the surface of each electrode 5 is roughened collectively by the unevenness of the pressing surface 11. Turn into

【００１４】こののち、図３に示すように金等からなる
ワイヤ７を通したキャピラリー１２を用い、そのワイヤ
７の一端部をキャピラリー１２を介してフィルム基板２
の電極６の表面に押し付け、超音波振動による摩擦熱で
ワイヤ７を電極６に溶着して接着させ、ついでキャピラ
リー１２を引き上げ、ワイヤ７の途中を前記フィルム基
板２の電極６に対応する液晶パネル１の電極５の表面に
押し付け、同様に超音波振動により溶着して接着させ、
この接着後にワイヤ７の余剰部分をカッターで切断す
る。このような工程で、互いに対応するフィルム基板２
の電極６と液晶パネル１の電極５とをそれぞれ個々にワ
イヤ７で接続する。Thereafter, as shown in FIG. 3, a capillary 12 having a wire 7 made of gold or the like is used, and one end of the wire 7 is passed through the capillary 12 to form a film substrate 2.
The electrode 7 is pressed against the surface of the electrode 6, the wire 7 is welded and adhered to the electrode 6 by frictional heat generated by ultrasonic vibration, and then the capillary 12 is pulled up. 1 is pressed against the surface of the electrode 5 and similarly welded and bonded by ultrasonic vibration,
After this bonding, the excess portion of the wire 7 is cut with a cutter. In such a process, the film substrates 2 corresponding to each other
The electrodes 6 and the electrodes 5 of the liquid crystal panel 1 are individually connected by wires 7.

【００１５】このようなワイヤボンディング方法におい
ては、Ａｌ等の表面の平滑度が高い金属で形成された各
電極５，６の表面が加圧ツール１０の加圧面１１により
予め粗面化されており、このため電極５，６の表面にワ
イヤ７を押し付け、超音波振動によりこのワイヤ７を溶
着させる際に、電極５，６の表面とワイヤ７との間に有
効に摩擦熱が発生し、したがってワイヤ７を良好にかつ
確実に電極５，６に溶着させることができる。In such a wire bonding method, the surface of each of the electrodes 5 and 6 formed of a metal having a high smoothness such as Al is roughened in advance by the pressing surface 11 of the pressing tool 10. Therefore, when the wire 7 is pressed against the surfaces of the electrodes 5 and 6 and the wire 7 is welded by ultrasonic vibration, frictional heat is effectively generated between the surfaces of the electrodes 5 and 6 and the wire 7. The wire 7 can be welded to the electrodes 5 and 6 satisfactorily and reliably.

【００１６】なお本発明は、液晶パネルの電極とフィル
ム基板の電極とを接続する場合に限らず、例えば図５に
示すように、配線基板２１の上に取り付けられたＩＣや
ＬＳＩ等の半導体チップ２２における電極２３と、配線
基板２１の上に形成された電極２４とをワイヤ７で接続
する場合においても適用することができる。The present invention is not limited to the case where the electrodes of the liquid crystal panel and the electrodes of the film substrate are connected to each other. For example, as shown in FIG. 5, a semiconductor chip such as an IC or LSI mounted on the wiring substrate 21 is provided. It can be applied also when the electrode 23 in 22 and the electrode 24 formed on the wiring board 21 are connected by the wire 7.

【００１７】すなわち、このような場合においても、電
極２３，２４の表面を加圧ツールにより予め粗面化して
おくことにより、ワイヤ７を良好にかつ確実に電極２
３，２４に溶着させることができる。That is, even in such a case, by preliminarily roughening the surfaces of the electrodes 23 and 24 with a pressing tool, the wire 7 can be satisfactorily and reliably formed on the electrode 2.
It can be welded to 3,24.

【００１８】[0018]

【発明の効果】以上説明したように本発明によれば、電
極の表面を予め粗面化し、この状態でキャピラリーに通
したワイヤを電極の表面に押し付けて超音波振動で溶着
させるようにしたから、表面の平滑度が高い金属で形成
された電極を用いる場合であっても、電極の表面とワイ
ヤとの間に有効に摩擦熱を発生させてワイヤを良好にか
つ確実に電極の表面に溶着させることができる。As described above, according to the present invention, the surface of the electrode is roughened in advance, and in this state, the wire passed through the capillary is pressed against the surface of the electrode to be welded by ultrasonic vibration. Even when using an electrode formed of a metal having a high surface smoothness, frictional heat is effectively generated between the electrode surface and the wire, and the wire is welded to the electrode surface satisfactorily and reliably. Can be made.

【図面の簡単な説明】[Brief description of drawings]

【図１】フィルム基板の電極の上方に加圧ツールを配置
させた状態を示す斜視図。FIG. 1 is a perspective view showing a state in which a pressure tool is arranged above an electrode of a film substrate.

【図２】フィルム基板の電極の上方に加圧ツールを配置
させた状態を示す断面図。FIG. 2 is a cross-sectional view showing a state in which a pressure tool is arranged above the electrodes of the film substrate.

【図３】フィルム基板の電極の上方にキャピラリーを配
置させた状態を示す斜視図。FIG. 3 is a perspective view showing a state in which a capillary is arranged above an electrode of a film substrate.

【図４】フィルム基板の電極と液晶パネルの電極とを導
電用のワイヤで接続した状態を示す斜視図。FIG. 4 is a perspective view showing a state in which an electrode of the film substrate and an electrode of the liquid crystal panel are connected by a conductive wire.

【図５】配線基板の電極と半導体チップの電極とを導電
用のワイヤで接続した状態を示す斜視図。FIG. 5 is a perspective view showing a state in which an electrode of a wiring board and an electrode of a semiconductor chip are connected by a conductive wire.

【符号の説明】[Explanation of symbols]

５…電極 ６…電極 ７…ワイヤ １０…加圧ツール １２…キャピラリー 5 ... Electrode 6 ... Electrode 7 ... Wire 10 ... Pressurizing tool 12 ... Capillary

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】電極形成部に配列形成された各電極の表面
に一括して加圧ツールを押し当ててこれら電極の表面を
粗面化し、こののちこれら電極の表面に、順次キャピラ
リーに通したワイヤを押し付け、このワイヤを超音波振
動により前記電極に溶着して接着させることを特徴とす
るワイヤボンディング方法。1. A pressing tool is collectively pressed against the surface of each electrode arrayed in the electrode forming portion to roughen the surface of these electrodes, and then the surfaces of these electrodes are successively passed through a capillary. A wire bonding method, wherein a wire is pressed and the wire is welded and adhered to the electrode by ultrasonic vibration.
JP23698592A 1992-09-04 1992-09-04 Wire bonding method Expired - Fee Related JP3252475B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23698592A JP3252475B2 (en) 1992-09-04 1992-09-04 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23698592A JP3252475B2 (en) 1992-09-04 1992-09-04 Wire bonding method

Publications (2)

Publication Number Publication Date
JPH0685012A true JPH0685012A (en) 1994-03-25
JP3252475B2 JP3252475B2 (en) 2002-02-04

Family

ID=17008689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23698592A Expired - Fee Related JP3252475B2 (en) 1992-09-04 1992-09-04 Wire bonding method

Country Status (1)

Country Link
JP (1) JP3252475B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119563A (en) * 2009-12-07 2011-06-16 Denso Corp Wire bonding method and semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119563A (en) * 2009-12-07 2011-06-16 Denso Corp Wire bonding method and semiconductor device

Also Published As

Publication number Publication date
JP3252475B2 (en) 2002-02-04

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