JPH0685013A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH0685013A
JPH0685013A JP4236986A JP23698692A JPH0685013A JP H0685013 A JPH0685013 A JP H0685013A JP 4236986 A JP4236986 A JP 4236986A JP 23698692 A JP23698692 A JP 23698692A JP H0685013 A JPH0685013 A JP H0685013A
Authority
JP
Japan
Prior art keywords
wire
electrode
electrodes
welded
capillary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4236986A
Other languages
Japanese (ja)
Inventor
Maki Tsuji
真樹 辻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP4236986A priority Critical patent/JPH0685013A/en
Publication of JPH0685013A publication Critical patent/JPH0685013A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To provide a wire bonding method by which a wire can be welded properly and securely on the surface of electrodes for bonding even when the electrodes made of metal having high flatness on the surface thereof is used. CONSTITUTION:A pressing punch 10 is successively brought into contact with respective surfaces of electrodes 6 arranged on an electrode forming part in order to form recessed parts on the surface of the electrodes 6, and then a wire 7 passing through a capillary 12 is successively pressed on the surfaces of the electrodes 6 and the wire 7 is welded and bonded on the electrodes 6 through ultrasonic vibration.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は電極の表面に導電用のワ
イヤを接着させるワイヤボンディング方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method for bonding a conductive wire to the surface of an electrode.

【０００２】[0002]

【従来の技術】配線基板や半導体チップの電極に導電用
のワイヤを超音波を用いて接着させるワイヤボンディン
グ方法が知られている。このワイヤボンディング方法
は、金やアルミニウム等の極細のワイヤを通したキャピ
ラリーを用いてそのワイヤを電極の上に押し付け、この
状態でキャピラリーに超音波振動を与え、この超音波振
動による摩擦熱でワイヤを電極に溶着して接着させる方
法である。2. Description of the Related Art There is known a wire bonding method in which a conductive wire is adhered to an electrode of a wiring board or a semiconductor chip by using ultrasonic waves. This wire bonding method uses a capillary through which an ultrafine wire such as gold or aluminum is pressed, and presses the wire onto the electrode.In this state, ultrasonic vibration is applied to the capillary, and the friction heat generated by this ultrasonic vibration causes the wire to move. Is a method of welding and adhering to the electrode.

【０００３】[0003]

【発明が解決しようとする課題】このような方法により
ワイヤをＡｌ等からなる電極に溶着して接着させる場
合、超音波振動による充分な摩擦熱が得られず、電極に
対するワイヤの接着が不充分となる。この問題を解決す
るためには、キャピラリーの加圧力や超音波の出力を高
めることが考えられるが、このような手段を採用する
と、電極の表面に大きなダメージを与えてしまい、むし
ろワイヤの接着不良が生じ易くなってしまう。When a wire is welded and adhered to an electrode made of Al or the like by such a method, sufficient frictional heat due to ultrasonic vibration cannot be obtained, resulting in insufficient adhesion of the wire to the electrode. Becomes In order to solve this problem, it is conceivable to increase the pressure applied to the capillaries and the output of ultrasonic waves, but if such a method is adopted, the surface of the electrode will be seriously damaged, and rather the adhesion of the wire will be poor. Is likely to occur.

【０００４】本発明はこのような点に着目してなされた
もので、その目的とするところは、表面の平滑度が高い
金属で形成された電極を用いた場合であっても、その電
極の表面に良好かつ確実にワイヤを溶着して接着させる
ことができるワイヤボンディング方法を提供することに
ある。The present invention has been made by paying attention to such a point, and an object of the present invention is to obtain an electrode formed of a metal having a high surface smoothness even if the electrode is used. It is an object of the present invention to provide a wire bonding method capable of welding and adhering a wire onto a surface in a favorable and reliable manner.

【０００５】[0005]

【課題を解決するための手段】本発明はこのような目的
を達成するために、電極形成部に配列形成された各電極
の個々の表面に順次加圧部材を押し当ててこれら電極の
表面に凹部を形成し、こののちこれら電極の表面に、順
次キャピラリーに通したワイヤを押し付け、このワイヤ
を超音波振動により前記電極に溶着して接着させるよう
にしたものである。SUMMARY OF THE INVENTION In order to achieve such an object, the present invention sequentially presses a pressing member onto the individual surfaces of the electrodes arranged in the electrode forming portion so that the surfaces of these electrodes are contacted with each other. A concave portion is formed, and thereafter, a wire which has passed through a capillary is pressed against the surfaces of these electrodes, and the wire is welded and adhered to the electrode by ultrasonic vibration.

【０００６】[0006]

【作用】このようなワイヤボンディング方法において
は、各電極の表面が加圧部材の加圧面を介して形成され
た凹部により予め粗面化され、したがって電極の表面に
ワイヤを押し付け、超音波振動によりこのワイヤを溶着
させる際に、電極の表面とワイヤとの間に有効に摩擦熱
が発生し、したがってワイヤを良好にかつ確実に電極に
溶着させることが可能となる。In such a wire bonding method, the surface of each electrode is roughened in advance by the recess formed through the pressing surface of the pressing member, and therefore, the wire is pressed against the surface of the electrode and ultrasonic vibration is applied. When the wire is welded, frictional heat is effectively generated between the surface of the electrode and the wire, so that the wire can be welded to the electrode satisfactorily and reliably.

【０００７】[0007]

【実施例】以下、本発明の一実施例について図面を参照
して説明する。図４において、符号１は画像を表示する
液晶パネル、２はこの液晶パネル１を駆動する駆動回路
が形成されたフィルム基板を示している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. In FIG. 4, reference numeral 1 is a liquid crystal panel for displaying an image, and 2 is a film substrate on which a drive circuit for driving the liquid crystal panel 1 is formed.

【０００８】液晶パネル１は、ガラス等からなる一対の
透明基板３，４を重ね合わせ、かつその相互間に液晶
（図示せず）を封入してなる。そして一方の透明基板３
が他方の透明基板４の端縁から延出し、この延出部分の
上にフィルム基板２が接着剤を介して取り付けられてい
る。The liquid crystal panel 1 is formed by stacking a pair of transparent substrates 3 and 4 made of glass or the like and enclosing a liquid crystal (not shown) between them. And one transparent substrate 3
Extends from the edge of the other transparent substrate 4, and the film substrate 2 is attached via an adhesive on the extended portion.

【０００９】液晶パネル１における一方の透明基板３の
上にはアルミニウム等からなる電極５が配列形成され、
またフィルム基板２の上にはアルミニウム等からなる電
極６が前記液晶パネル１の各電極５に対応するように配
列形成されている。そしてフィルム基板２の各電極６と
液晶パネル１の各電極５とがワイヤボンディングによる
ワイヤ７を介してそれぞれ接続されている。Electrodes 5 made of aluminum or the like are arrayed on one transparent substrate 3 of the liquid crystal panel 1,
Electrodes 6 made of aluminum or the like are arranged on the film substrate 2 so as to correspond to the electrodes 5 of the liquid crystal panel 1. The electrodes 6 of the film substrate 2 and the electrodes 5 of the liquid crystal panel 1 are connected to each other via wires 7 formed by wire bonding.

【００１０】図１に示す１０は、昇降可能に設けられた
金属製の加圧ポンチで、前記各電極５，６の表面を粗面
化するための加圧部材として用いられるものである。こ
の加圧ポンチ１０の下端面は前記電極５，６よりもやや
小さい面積の加圧面１１となっており、この加圧面１１
に図２に示すように僅かな高さの例えば円環状の突起１
１ａが一体に突出形成されている。Reference numeral 10 shown in FIG. 1 is a metal pressure punch which is provided so as to be movable up and down and is used as a pressure member for roughening the surfaces of the electrodes 5 and 6. The lower end surface of the pressure punch 10 is a pressure surface 11 having a slightly smaller area than the electrodes 5 and 6, and the pressure surface 11
As shown in FIG. 2, for example, an annular projection 1 having a slight height.
1a is integrally formed to project.

【００１１】ワイヤボンディングを行なう際には、まず
図１および図２に示すように、フィルム基板２における
電極６の上方に加圧ポンチ１０を配置してこの加圧ポン
チ１０の加圧面１１を電極６の表面に対向させる。When performing wire bonding, first, as shown in FIGS. 1 and 2, a pressure punch 10 is arranged above the electrode 6 on the film substrate 2, and the pressure surface 11 of the pressure punch 10 is used as an electrode. Face the surface of 6.

【００１２】この状態で加圧ポンチ１０を下降し、加圧
面１１を一定の圧力で電極６の表面に押し当てると共
に、超音波振動を加えることにより加圧面１１の突起１
２ａで電極６の表面に凹部を形成して電極６の表面を粗
面化する。このような処理をフィルム基板２の各電極６
の個々に順次施す。さらに液晶パネル１の各電極５に対
しても同様の処理をその個々に順次施す。In this state, the pressure punch 10 is lowered, the pressure surface 11 is pressed against the surface of the electrode 6 with a constant pressure, and ultrasonic vibration is applied to the projection 1 of the pressure surface 11.
A recess is formed on the surface of the electrode 6 by 2a to roughen the surface of the electrode 6. Such a treatment is applied to each electrode 6 of the film substrate 2.
Of each of the above is sequentially applied. Further, the same process is sequentially performed on each electrode 5 of the liquid crystal panel 1 individually.

【００１３】次に、図３に示すように金等からなるワイ
ヤ７を通したキャピラリー１２を用い、そのワイヤ７の
一端部をキャピラリー１２を介してフィルム基板２の電
極６の表面に押し付け、超音波振動による摩擦熱でワイ
ヤ７を電極６に溶着して接着させ、こののちキャピラリ
ー１２を引き上げ、ワイヤ７の途中を前記フィルム基板
２の電極６に対応する液晶パネル１の電極５の表面に押
し付け、同様に超音波振動により溶着して接着させ、こ
の接着後にワイヤ７の余剰部分をカッターで切断する。
このような工程で、互いに対応するフィルム基板２の電
極６と液晶パネル１の電極５とをそれぞれ個々にワイヤ
７で接続する。Next, as shown in FIG. 3, a capillary 12 through which a wire 7 made of gold or the like is passed is used, and one end of the wire 7 is pressed against the surface of the electrode 6 of the film substrate 2 through the capillary 12, The wire 7 is welded and adhered to the electrode 6 by frictional heat generated by sonic vibration, and then the capillary 12 is pulled up, and the wire 7 is pressed midway against the surface of the electrode 5 of the liquid crystal panel 1 corresponding to the electrode 6 of the film substrate 2. Similarly, ultrasonic vibration is used to weld and bond the wires, and after this bonding, the excess portion of the wire 7 is cut with a cutter.
In such a process, the electrodes 6 of the film substrate 2 and the electrodes 5 of the liquid crystal panel 1 which correspond to each other are individually connected by the wires 7.

【００１４】このようなワイヤボンディング方法におい
ては、各電極５，６の表面が加圧ポンチ１０の加圧面１
１で形成された凹部により予め粗面化されており、この
ため電極５，６の表面にワイヤ７を押し付け、超音波振
動によりこのワイヤ７を溶着させる際に、電極５，６の
表面とワイヤ７との間に有効に摩擦熱が発生し、したが
ってワイヤ７を良好にかつ確実に電極５，６に溶着させ
ることができる。In such a wire bonding method, the surface of each electrode 5, 6 is the pressure surface 1 of the pressure punch 10.
The surface is preliminarily roughened by the concave portion formed by 1. Therefore, when the wire 7 is pressed against the surfaces of the electrodes 5 and 6 and the wire 7 is welded by ultrasonic vibration, Friction heat is effectively generated between the wire 7 and the wire 7, so that the wire 7 can be welded to the electrodes 5 and 6 satisfactorily and reliably.

【００１５】なお、加圧ポンチ１０の加圧面１１には、
図５（Ａ）に示すように十字状の突起１１ａを形成し、
この突起１１ａで電極５，６の表面に十字状の凹部を形
成して粗面化する場合、あるいは図５（Ｂ）に示すよう
に細かな格子状の突起１１ａを形成し、この突起１１ａ
で電極５，６の表面に細かな格子状の凹部を形成して粗
面化する場合、さらには図５（Ｃ）に示すように球面状
の突起１１ａを形成し、この突起１１ａで電極５，６の
表面に球面状の凹部を形成して粗面化する場合などであ
ってもよい。The pressure surface 11 of the pressure punch 10 has
As shown in FIG. 5 (A), a cross-shaped protrusion 11a is formed,
When the protrusions 11a are used to form cross-shaped recesses on the surfaces of the electrodes 5 and 6 to roughen the surface, or as shown in FIG. 5B, fine grid-like protrusions 11a are formed.
In the case of forming fine grid-shaped recesses on the surfaces of the electrodes 5 and 6 for roughening, spherical projections 11a are further formed as shown in FIG. , 6 may be provided with a spherical recess on the surface to roughen the surface.

【００１６】また、前記実施例では、電極表面を粗面化
するための加圧部材として、加圧ポンチ１０を用いた場
合を示したが、本発明はこれに限ることなく、ワイヤ７
を接続するためのキャピラリー１２を加圧部材として用
いることもできる。この場合、ワイヤ７を接着する工程
の前に前記キャピラリー１２を前記電極表面に加圧して
押し当てて粗面化を行なうようにすればよい。Further, in the above-described embodiment, the case where the pressure punch 10 is used as the pressure member for roughening the electrode surface has been described, but the present invention is not limited to this, and the wire 7 is not limited thereto.
The capillary 12 for connecting to can also be used as a pressing member. In this case, the surface of the capillary 12 may be roughened by pressing the capillary 12 against the surface of the electrode before the step of bonding the wire 7.

【００１７】さらに、本発明は、液晶パネルの電極とフ
ィルム基板の電極とを接続する場合に限らず、例えば図
６に示すように、配線基板２１の上に取り付けられたＩ
ＣやＬＳＩ等の半導体チップ２２における電極２３と、
配線基板２１の上に形成された電極２４とをワイヤ７で
接続する場合においても適用することができる。Further, the present invention is not limited to the case where the electrodes of the liquid crystal panel and the electrodes of the film substrate are connected, but as shown in FIG. 6, for example, I mounted on the wiring substrate 21.
An electrode 23 in a semiconductor chip 22 such as C or LSI,
It can also be applied when connecting the electrode 24 formed on the wiring board 21 with the wire 7.

【００１８】すなわち、このような場合においても、電
極２３，２４の表面を加圧ポンチにより予め粗面化して
おくことにより、ワイヤ７を良好にかつ確実に電極２
３，２４に溶着させることができる。That is, even in such a case, by preliminarily roughening the surfaces of the electrodes 23 and 24 by a pressure punch, the wire 7 can be satisfactorily and reliably formed on the electrode 2.
It can be welded to 3,24.

【００１９】[0019]

【発明の効果】以上説明したように本発明によれば、各
電極の表面を予め粗面化し、この状態でキャピラリーに
通したワイヤを電極の表面に押し付けて超音波振動で溶
着させるようにしたから、表面の平滑度が高い金属で形
成された電極が用いられる場合であっても、電極の表面
とワイヤとの間に有効に摩擦熱を発生させてワイヤを良
好にかつ確実に電極の表面に溶着させることができる。As described above, according to the present invention, the surface of each electrode is roughened in advance, and in this state, the wire passed through the capillary is pressed against the surface of the electrode to be welded by ultrasonic vibration. Therefore, even when an electrode formed of a metal having a high surface smoothness is used, frictional heat is effectively generated between the surface of the electrode and the wire to ensure good and reliable wire surface. Can be welded to.

【図面の簡単な説明】[Brief description of drawings]

【図１】フィルム基板の電極の上方に加圧ポンチを配置
させた状態を示す斜視図。FIG. 1 is a perspective view showing a state where a pressure punch is arranged above an electrode of a film substrate.

【図２】フィルム基板の電極の上方に加圧ポンチを配置
させた状態を示す断面図。FIG. 2 is a cross-sectional view showing a state in which a pressure punch is arranged above an electrode of a film substrate.

【図３】フィルム基板の電極の上方にキャピラリーを配
置させた状態を示す斜視図。FIG. 3 is a perspective view showing a state in which a capillary is arranged above an electrode of a film substrate.

【図４】フィルム基板の電極と液晶パネルの電極とを導
電用のワイヤで接続した状態を示す斜視図。FIG. 4 is a perspective view showing a state in which an electrode of the film substrate and an electrode of the liquid crystal panel are connected by a conductive wire.

【図５】加圧ポンチの加圧面に形成する突起の変形例を
説明図。FIG. 5 is an explanatory view showing a modified example of the protrusion formed on the pressure surface of the pressure punch.

【図６】配線基板の電極と半導体チップの電極とを導電
用のワイヤで接続した状態を示す斜視図。FIG. 6 is a perspective view showing a state in which an electrode of a wiring board and an electrode of a semiconductor chip are connected by a conductive wire.

【符号の説明】[Explanation of symbols]

５…電極 ６…電極 ７…ワイヤ １０…加圧ポンチ １２…キャピラリー 5 ... Electrode 6 ... Electrode 7 ... Wire 10 ... Pressurizing Punch 12 ... Capillary

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】電極形成部に配列形成された各電極の個々
の表面に順次加圧部材を押し当ててこれら電極の表面に
凹部を形成し、こののちこれら電極の表面に、順次キャ
ピラリーに通したワイヤを押し付け、このワイヤを超音
波振動により前記電極に溶着して接着させることを特徴
とするワイヤボンディング方法。1. A pressing member is sequentially pressed against the individual surfaces of the electrodes arranged in the electrode forming portion to form recesses in the surfaces of these electrodes, and then the surfaces of these electrodes are successively passed through a capillary. The wire bonding method, wherein the wire is pressed, and the wire is welded and adhered to the electrode by ultrasonic vibration.
JP4236986A 1992-09-04 1992-09-04 Wire bonding method Pending JPH0685013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4236986A JPH0685013A (en) 1992-09-04 1992-09-04 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4236986A JPH0685013A (en) 1992-09-04 1992-09-04 Wire bonding method

Publications (1)

Publication Number Publication Date
JPH0685013A true JPH0685013A (en) 1994-03-25

Family

ID=17008703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4236986A Pending JPH0685013A (en) 1992-09-04 1992-09-04 Wire bonding method

Country Status (1)

Country Link
JP (1) JPH0685013A (en)

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