JPH0676919A - Ceramic heater - Google Patents
Ceramic heaterInfo
- Publication number
- JPH0676919A JPH0676919A JP23018192A JP23018192A JPH0676919A JP H0676919 A JPH0676919 A JP H0676919A JP 23018192 A JP23018192 A JP 23018192A JP 23018192 A JP23018192 A JP 23018192A JP H0676919 A JPH0676919 A JP H0676919A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- temperature sensor
- ceramic
- ceramic heater
- heating element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、セラミックヒータ、特
に、セラミック体とそれに形成された抵抗発熱体とを備
えたセラミックヒータに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic heater, and more particularly to a ceramic heater having a ceramic body and a resistance heating element formed thereon.
【０００２】[0002]
【従来の技術】セラミックヒータとして、アルミナセラ
ミックス等のセラミック板に、タングステンやモリブデ
ン等からなる屈曲パターン状の抵抗発熱体がスクリーン
印刷等の公知の厚膜形成方法により形成されたものが知
られている。この種のセラミックヒータにより被加熱体
を加熱する場合は、被加熱体に熱電対、サーミスタまた
はガラスタイプ等の温度センサを装着し、この温度セン
サからの温度情報にしたがってセラミックヒータの動作
を制御している。しかし、被加熱体に取り付けられた温
度センサによるセラミックヒータの制御は、温度センサ
の取り付け状態により不正確になる場合が多い。2. Description of the Related Art As a ceramic heater, there is known a ceramic heater such as a ceramic plate made of alumina ceramics or the like, on which a resistance heating element having a bent pattern made of tungsten, molybdenum or the like is formed by a known thick film forming method such as screen printing. There is. When heating an object to be heated with this type of ceramic heater, attach a temperature sensor such as a thermocouple, thermistor or glass type to the object to be heated, and control the operation of the ceramic heater according to the temperature information from this temperature sensor. ing. However, the control of the ceramic heater by the temperature sensor attached to the object to be heated often becomes inaccurate depending on the attachment state of the temperature sensor.
【０００３】そこで、セラミック板上に抵抗パターンに
よる温度センサを直接設けたセラミックヒータが提供さ
れている。ここでの温度センサは、モリブデンシリサイ
ド、タングステン、モリブデン等の高融点金属からな
り、これらの高融点金属の粉末を含むペーストをスクリ
ーン印刷により印刷した後に焼成することにより得られ
た厚膜である。Therefore, there is provided a ceramic heater in which a temperature sensor based on a resistance pattern is directly provided on a ceramic plate. The temperature sensor here is a thick film made of a refractory metal such as molybdenum silicide, tungsten, molybdenum, etc., which is obtained by printing a paste containing powder of these refractory metals by screen printing and firing the paste.
【０００４】[0004]
【発明が解決しようとする課題】前記従来のセラミック
ヒータは、温度センサの厚みが不均一になりやすく、そ
の結果、温度センサの抵抗値にばらつきが生じて温度制
御を正確に行えない。本発明の目的は、セラミックヒー
タの温度制御の正確性を高めることにある。In the above-mentioned conventional ceramic heater, the thickness of the temperature sensor is likely to be non-uniform, and as a result, the resistance value of the temperature sensor varies so that the temperature control cannot be accurately performed. An object of the present invention is to improve the accuracy of temperature control of a ceramic heater.
【０００５】[0005]
【課題を解決するための手段】本発明に係るセラミック
ヒータは、セラミック体と、セラミック体に形成された
抵抗発熱体と、セラミック体に固定された薄膜温度セン
サとを備えている。A ceramic heater according to the present invention comprises a ceramic body, a resistance heating element formed in the ceramic body, and a thin film temperature sensor fixed to the ceramic body.
【０００６】[0006]
【作用】本発明に係るセラミックヒータでは、セラミッ
ク体上に薄膜温度センサが直接固定されている。この薄
膜温度センサは、厚膜の温度センサに比べて温度測定精
度が高く、セラミックヒータの温度を正確に測定し得
る。In the ceramic heater according to the present invention, the thin film temperature sensor is directly fixed on the ceramic body. This thin film temperature sensor has a higher temperature measurement accuracy than the thick film temperature sensor, and can accurately measure the temperature of the ceramic heater.
【０００７】[0007]
【実施例】図１及び図２に、本発明の一実施例に係るセ
ラミックヒータを示す。図において、セラミックヒータ
１は、セラミック基板１ａと、薄膜温度センサ６とから
主に構成されている。セラミック基板１ａは、アルミナ
セラミックス等からなる概ね長方形の板状であり、その
上面に金属発熱体層２及びリード配線層３，４が配置さ
れている。金属発熱体層２は、セラミック基板１の上面
に一連の屈曲パターン状に形成されており、その両端部
２ａ，２ｂがセラミック基板１の隅角部近傍に配置され
ている。なお、金属発熱体層２は、モリブデンシリサイ
ド（ＭｏＳｉＯ2 ）粉末とホウ珪酸ガラス粉末とを含む
発熱体材料からなる。1 and 2 show a ceramic heater according to an embodiment of the present invention. In the figure, the ceramic heater 1 is mainly composed of a ceramic substrate 1 a and a thin film temperature sensor 6. The ceramic substrate 1a has a substantially rectangular plate shape made of alumina ceramics or the like, and the metal heating element layer 2 and the lead wiring layers 3 and 4 are arranged on the upper surface thereof. The metal heating element layer 2 is formed on the upper surface of the ceramic substrate 1 in a series of bent patterns, and both ends 2a and 2b thereof are arranged near the corners of the ceramic substrate 1. The metal heating element layer 2 is made of a heating element material containing molybdenum silicide (MoSiO 2 ) powder and borosilicate glass powder.
【０００８】リード配線層３，４は、金属発熱体層２と
接触しないようにセラミック基板１ａ上に互いに平行に
形成されている。リード配線層３，４の一端側の端部３
ａ，４ａは、セラミック基板１ａ上の中央部に延びてお
り、互いに向き合うように屈曲している。また、リード
配線層３，４の他端は、セラミック基板１ａの一端部に
延びており、金属発熱体層２の両端部２ａ，２ｂの間で
電極３ｂ，４ｂを形成している。このようなリード配線
層３，４は、モリブデンシリサイド（ＭｏＳｉＯ2 ）か
らなる。The lead wiring layers 3 and 4 are formed parallel to each other on the ceramic substrate 1a so as not to contact the metal heating element layer 2. The end portion 3 on one end side of the lead wiring layers 3 and 4
The a and 4a extend to the central portion on the ceramic substrate 1a and are bent so as to face each other. The other ends of the lead wiring layers 3 and 4 extend to one end of the ceramic substrate 1a, and electrodes 3b and 4b are formed between both ends 2a and 2b of the metal heating element layer 2. Such lead wiring layers 3 and 4 are made of molybdenum silicide (MoSiO 2 ).
【０００９】薄膜温度センサ６は、図３に示すようなチ
ップ状の部材であり、セラミックスからなる基体６ａの
一面に白金からなる薄膜抵抗体７が配置されたものであ
る。薄膜抵抗体７はスパッタリング法により均一に形成
されている。また、薄膜抵抗体７上には、薄膜抵抗体７
の両端部７ａ，７ａを除いてホウ珪酸ガラスからなるカ
バーガラス層８が形成されている。なお、図３では、図
１及び図２に示された薄膜温度センサ６の上下を逆転し
ている。The thin film temperature sensor 6 is a chip-shaped member as shown in FIG. 3, and has a thin film resistor 7 made of platinum arranged on one surface of a base 6a made of ceramics. The thin film resistor 7 is uniformly formed by the sputtering method. In addition, on the thin film resistor 7, the thin film resistor 7
A cover glass layer 8 made of borosilicate glass is formed except for both end portions 7a, 7a. Note that in FIG. 3, the thin film temperature sensor 6 shown in FIGS. 1 and 2 is turned upside down.
【００１０】このような薄膜温度センサ６は、薄膜抵抗
体７がセラミック基板１ａのリード配線層３，４と対向
するようにリード配線層３，４の端部３ａ，４ａ間に配
置されており、薄膜抵抗体７の両端部７ａ，７ａがモリ
ブデンシリサイドからなる接着材９により端部３ａ，４
ａに固定されている。上述のセラミックヒータ１の図上
面には、金属発熱体層２の両端部２ａ，２ｂ、リード配
線層３，４の電極３ｂ，４ｂ及び薄膜温度センサ６の近
傍を除いてホウ珪酸ガラスからなるコーティング層５が
形成されている。Such a thin film temperature sensor 6 is arranged between the end portions 3a and 4a of the lead wiring layers 3 and 4 so that the thin film resistor 7 faces the lead wiring layers 3 and 4 of the ceramic substrate 1a. , Both ends 7a, 7a of the thin film resistor 7 are made of an adhesive 9 made of molybdenum silicide.
It is fixed to a. A coating made of borosilicate glass is provided on the upper surface of the above-mentioned ceramic heater 1 except for both ends 2a and 2b of the metal heating element layer 2, the electrodes 3b and 4b of the lead wiring layers 3 and 4 and the vicinity of the thin film temperature sensor 6. Layer 5 has been formed.
【００１１】次に、前記セラミックヒータ１の製造方法
について説明する。セラミック基板１ａがたとえばアル
ミナセラミックスからなる場合には、アルミナ（Ａｌ2
Ｏ3 ）、シリカ（ＳｉＯ2 ）、カルシア（ＣａＯ）、マ
グネシア（ＭｇＯ）等の原料粉末に適当なバインダー及
び溶剤を加えて混合することによりセラミックペースト
を用意する。このセラミックペーストをドクターブレー
ド法等の周知の方法によりグリーンシートに成形し、こ
れを約１６００℃の高温で焼成するとセラミック基板１
ａが得られる。Next, a method of manufacturing the ceramic heater 1 will be described. When the ceramic substrate 1a is made of alumina ceramics, for example, alumina (Al 2
O 3 ), silica (SiO 2 ), calcia (CaO), magnesia (MgO) and other raw material powders are mixed with an appropriate binder and solvent to prepare a ceramic paste. This ceramic paste is formed into a green sheet by a well-known method such as a doctor blade method and is fired at a high temperature of about 1600 ° C. to obtain a ceramic substrate 1.
a is obtained.
【００１２】次に、セラミック基板１ａ上に、上述の発
熱体材料に適当なバインダー及び有機溶剤を添加混合し
て得た発熱体ペーストを周知のスクリーン印刷法等の厚
膜手法により、金属発熱体層２の形状に相当する屈曲パ
ターン状に印刷する。また、モリブデンシリサイドを含
むペーストをリード配線層３，４の形状に対応させて印
刷する。Next, a heating element paste obtained by adding and mixing an appropriate binder and an organic solvent to the above-mentioned heating element material is formed on the ceramic substrate 1a by a well-known thick film method such as a screen printing method and the like. Printing is performed in a bending pattern corresponding to the shape of the layer 2. Further, a paste containing molybdenum silicide is printed in correspondence with the shapes of the lead wiring layers 3 and 4.
【００１３】次に、リード配線層３，４用に印刷したペ
ーストの端部３ａ，４ａに相当する部位間に薄膜温度セ
ンサ６を仮固定する。具体的には、リード配線層３，４
を形成するためのペーストと実質的に同一組成の接着材
９を用いて端部３ａ，４ａとなる部位に薄膜温度センサ
６の薄膜抵抗体７の両端部７ａ，７ａを載置する。さら
に、ホウ珪酸ガラス粉末に適当なバインダー及び溶剤を
添加混合して得たコーティングペーストを、上述の所定
部位を除いてスクリーン印刷法等の厚膜手法により塗布
する。Next, the thin film temperature sensor 6 is temporarily fixed between the portions corresponding to the ends 3a and 4a of the paste printed for the lead wiring layers 3 and 4. Specifically, the lead wiring layers 3 and 4
Both ends 7a, 7a of the thin film resistor 7 of the thin film temperature sensor 6 are placed on the portions to be the ends 3a, 4a by using an adhesive 9 having substantially the same composition as the paste for forming. Further, a coating paste obtained by adding and mixing an appropriate binder and solvent to borosilicate glass powder is applied by a thick film method such as a screen printing method except for the above-mentioned predetermined portion.
【００１４】最後に、たとえばＮ2 ガス等の不活性雰囲
気中で約１０００℃の温度で焼成すると、セラミックヒ
ータ１が得られる。ここで、接着材９は、リード配線層
３，４を形成するためのペーストと実質的に同一の組成
であり、しかも熱膨張率（６．５×１０-6／℃）が、セ
ラミック基板１ａを構成するアルミナセラミックスの熱
膨張率（６．６×-6／℃）と実質的に同じことであるか
ら、薄膜温度センサ６とセラミック基板１ａとの間に熱
膨張率の差による応力は実質的に残留しにくい。したが
って、薄膜温度センサ６は、セラミック基板１ａとの接
合強度が高く、セラミック基板１ａから容易に外れにく
い。Finally, the ceramic heater 1 is obtained by firing at a temperature of about 1000 ° C. in an inert atmosphere such as N 2 gas. Here, the adhesive 9 has substantially the same composition as that of the paste for forming the lead wiring layers 3 and 4, and has a coefficient of thermal expansion (6.5 × 10 −6 / ° C.) of the ceramic substrate 1 a. Since it is substantially the same as the coefficient of thermal expansion (6.6 × -6 / ° C.) of the alumina ceramics constituting the above, the stress due to the difference in coefficient of thermal expansion between the thin film temperature sensor 6 and the ceramic substrate 1a is substantially Hard to remain. Therefore, the thin film temperature sensor 6 has a high bonding strength with the ceramic substrate 1a and is not easily detached from the ceramic substrate 1a.
【００１５】次に、前記セラミックヒータ１の使用方法
について説明する。まず、セラミック基板１ａを被加熱
物に固定する。そして、金属発熱体層２の両端部２ａ，
２ｂ間に電圧印加装置を接続し、また、リード配線層
３，４の電極３ｂ，４ｂ間に制御回路を接続する。制御
回路は、薄膜温度センサ６の抵抗変化に応じて電圧印加
装置から金属発熱体層２への出力電圧を調節し、セラミ
ックヒータ１の温度調節をするためのものである。Next, a method of using the ceramic heater 1 will be described. First, the ceramic substrate 1a is fixed to the object to be heated. And both ends 2a of the metal heating element layer 2,
A voltage applying device is connected between 2b and a control circuit is connected between the electrodes 3b and 4b of the lead wiring layers 3 and 4. The control circuit is for adjusting the output voltage from the voltage applying device to the metal heating element layer 2 according to the resistance change of the thin film temperature sensor 6 to adjust the temperature of the ceramic heater 1.
【００１６】セラミックヒータ１の使用時には、電圧印
加装置から金属発熱体層２に電圧を印加する。金属発熱
体層２の発熱温度は、薄膜温度センサ６の抵抗変化によ
り検出され、リード配線層３，４を通じて制御回路に伝
達される。制御回路は、薄膜温度センサ６の抵抗値を基
準にして金属発熱体層２へ印加する電圧を制御する。こ
れにより、セラミックヒータ１の温度が所望温度に維持
される。When the ceramic heater 1 is used, a voltage is applied from the voltage application device to the metal heating element layer 2. The heat generation temperature of the metal heating element layer 2 is detected by the resistance change of the thin film temperature sensor 6 and transmitted to the control circuit through the lead wiring layers 3 and 4. The control circuit controls the voltage applied to the metal heating element layer 2 based on the resistance value of the thin film temperature sensor 6. As a result, the temperature of the ceramic heater 1 is maintained at the desired temperature.
【００１７】このようなセラミックヒータ１の動作時に
おいて、薄膜温度センサ６は、薄膜抵抗体７がスパッタ
リング法により形成された均一な膜であるために、セラ
ミックヒータ１の正確な温度を測定し得る。よって、セ
ラミックヒータ１は、正確に温度制御され得る。 〔他の実施例〕前記実施例では、薄膜温度センサ６の周
囲を除いてコーティング層５を形成したが、薄膜温度セ
ンサ６を含めてコーティング層５により被覆した場合も
本発明を同様に実施できる。During operation of the ceramic heater 1, the thin film temperature sensor 6 can measure the accurate temperature of the ceramic heater 1 because the thin film resistor 7 is a uniform film formed by the sputtering method. . Therefore, the temperature of the ceramic heater 1 can be accurately controlled. [Other Embodiments] In the above embodiments, the coating layer 5 was formed except for the periphery of the thin film temperature sensor 6, but the present invention can be similarly implemented when the coating layer 5 is also included including the thin film temperature sensor 6. .
【００１８】[0018]
【発明の効果】本発明に係るセラミックヒータは、セラ
ミック体上に薄膜温度センサが固定されているので、温
度制御の正確性が高まる。In the ceramic heater according to the present invention, since the thin film temperature sensor is fixed on the ceramic body, the accuracy of temperature control is improved.
【図１】本発明の一実施例の斜視図。FIG. 1 is a perspective view of an embodiment of the present invention.
【図２】図１のII−II縦断面図。FIG. 2 is a vertical sectional view taken along the line II-II in FIG.
【図３】前記実施例で用いられた薄膜温度センサの斜視
図。FIG. 3 is a perspective view of a thin film temperature sensor used in the above embodiment.
１ セラミックヒータ １ａ セラミック基板 ２ 金属発熱体層 ６ 薄膜温度センサ 1 Ceramic Heater 1a Ceramic Substrate 2 Metal Heater Layer 6 Thin Film Temperature Sensor
Claims (1)
えたセラミックヒータ。1. A ceramic heater comprising: a ceramic body; a resistance heating element formed on the ceramic body; and a thin film temperature sensor fixed to the ceramic body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23018192A JP3313772B2 (en) | 1992-08-28 | 1992-08-28 | Ceramic heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23018192A JP3313772B2 (en) | 1992-08-28 | 1992-08-28 | Ceramic heater |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0676919A true JPH0676919A (en) | 1994-03-18 |
| JP3313772B2 JP3313772B2 (en) | 2002-08-12 |
Family
ID=16903874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23018192A Expired - Fee Related JP3313772B2 (en) | 1992-08-28 | 1992-08-28 | Ceramic heater |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3313772B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004004419A1 (en) * | 2002-06-26 | 2004-01-08 | Nippon Valqua Industries, Ltd. | Planar heating body with temperature detector |
| JP2007329008A (en) * | 2006-06-07 | 2007-12-20 | Tokyo Electron Ltd | Hot plate and its manufacturing method |
| CN102131313A (en) * | 2011-03-29 | 2011-07-20 | 宁波市万泓电器科技有限公司 | Safety protection system of electric heating film heater |
| CN106828021A (en) * | 2017-03-03 | 2017-06-13 | 镇江海姆霍兹传热传动***有限公司 | Auto heater temperature sensor |
| CN112772992A (en) * | 2021-03-12 | 2021-05-11 | 熊晓辰 | Multi-electrode temperature control ceramic atomizing core and application and manufacturing method thereof |
-
1992
- 1992-08-28 JP JP23018192A patent/JP3313772B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004004419A1 (en) * | 2002-06-26 | 2004-01-08 | Nippon Valqua Industries, Ltd. | Planar heating body with temperature detector |
| JP2007329008A (en) * | 2006-06-07 | 2007-12-20 | Tokyo Electron Ltd | Hot plate and its manufacturing method |
| CN102131313A (en) * | 2011-03-29 | 2011-07-20 | 宁波市万泓电器科技有限公司 | Safety protection system of electric heating film heater |
| CN106828021A (en) * | 2017-03-03 | 2017-06-13 | 镇江海姆霍兹传热传动***有限公司 | Auto heater temperature sensor |
| CN112772992A (en) * | 2021-03-12 | 2021-05-11 | 熊晓辰 | Multi-electrode temperature control ceramic atomizing core and application and manufacturing method thereof |
| CN112772992B (en) * | 2021-03-12 | 2024-01-16 | 熊晓辰 | Multi-electrode temperature-control ceramic atomizing core and application and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3313772B2 (en) | 2002-08-12 |
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