JPH0669384A - Insulator sealing type semiconductor device - Google Patents
Insulator sealing type semiconductor deviceInfo
- Publication number
- JPH0669384A JPH0669384A JP4245777A JP24577792A JPH0669384A JP H0669384 A JPH0669384 A JP H0669384A JP 4245777 A JP4245777 A JP 4245777A JP 24577792 A JP24577792 A JP 24577792A JP H0669384 A JPH0669384 A JP H0669384A
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- chip
- heat sink
- semiconductor chip
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は放熱体（ヒートシンク）
を備えた絶縁物封止型半導体装置に関する。FIELD OF THE INVENTION The present invention relates to a heat sink.
The present invention relates to an insulator-sealed semiconductor device including:
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】半導体
チップが固着されたリードフレームとヒートシンクとを
組み合せたものを樹脂封止して半導体装置に形成するこ
とは公知である。この種の半導体装置ではリードフレー
ムをヒートシンクから絶縁しなければならない。例え
ば、この絶縁は特開昭６１−２４８５３８号公報に記載
されているようにリードフレームとヒートシンクとを金
型内に離間配置させ、両者の間に樹脂を注入することで
達成できる。しかしながら、この方法ではヒートシンク
とリードフレームとの間に樹脂が良好に注入されるよう
に両者の間隔を０．５ｍｍ以上のように比較的大きく設
定しなければならず、この絶縁層によって放熱効果が良
好に得られないという欠点があった。また、特公平４−
１５０２号公報に記載されているようにヒートシンクの
上面全体に絶縁層を予め設け、更にこの絶縁層の上に銅
層を設けたものを用意し、銅層にリードフレームを半田
付けして半導体装置を構成する方法がある。この方法に
よれば絶縁層を比較的薄く形成することができる。しか
しながら、銅層にリードフレームを固着するための半田
層はあまり薄くできないし、また半田層中に気泡等が発
生することがあり、やはり十分な放熱効果を得ることが
できない。また、製造工程が複雑になり、且つ絶縁層の
信頼性に問題がある。2. Description of the Related Art It is known that a combination of a lead frame having a semiconductor chip fixed thereto and a heat sink is resin-sealed to form a semiconductor device. In this type of semiconductor device, the lead frame must be insulated from the heat sink. For example, this insulation can be achieved by arranging the lead frame and the heat sink in a space in the mold as described in JP-A-61-248538 and injecting a resin between them. However, in this method, the distance between the heat sink and the lead frame must be set to a relatively large value of 0.5 mm or more so that the resin can be injected into the lead frame satisfactorily. There was a drawback that it could not be obtained well. In addition,
As described in Japanese Patent Publication No. 1502, an insulating layer is previously provided on the entire upper surface of a heat sink, and a copper layer is further provided on the insulating layer. A lead frame is soldered to the copper layer to solder the semiconductor device. There is a way to configure. According to this method, the insulating layer can be formed relatively thin. However, the solder layer for fixing the lead frame to the copper layer cannot be made very thin, and bubbles or the like may occur in the solder layer, so that a sufficient heat dissipation effect cannot be obtained. In addition, the manufacturing process is complicated and the reliability of the insulating layer is problematic.
【０００３】そこで、本発明の目的は比較的簡単に製作
することが可能であり且つ高い信頼性及び良好な放熱性
を有する絶縁物封止型半導体装置を提供することにあ
る。Therefore, an object of the present invention is to provide an insulator-sealed semiconductor device which can be manufactured relatively easily and which has high reliability and good heat dissipation.
【０００４】[0004]
【課題を解決するための手段】上記目的を達成するため
の本発明は、半導体チップと、一方の主面に前記半導体
チップが固着された導電性を有するチップ支持体と、前
記半導体チップを外部回路に接続するための外部リード
と、前記半導体チップと前記外部リードとを接続する内
部接続導体と、前記半導体チップの熱を放出するために
前記チップ支持体の他方の主面に対向配置された導電性
を有する放熱体と、前記チップ支持体と前記放熱体との
間に配置された絶縁体と、前記半導体チップと前記チッ
プ支持体と前記外部リードの一部と前記内部接続導体と
前記放熱体と前記絶縁体とを被覆する絶縁物封止体とを
備え、前記絶縁体が前記絶縁物封止体の圧縮率よりも大
きい圧縮率を有するシート状物体から成り、圧縮されて
前記チップ支持体に密着していることを特徴とする半導
体装置に係わるものである。なお、請求項２に示すよう
に、シート状物体にガラス繊維を含めることが望まし
い。SUMMARY OF THE INVENTION To achieve the above object, the present invention provides a semiconductor chip, a conductive chip support having the semiconductor chip fixed to one main surface, and the semiconductor chip externally. An external lead for connecting to a circuit, an internal connecting conductor connecting the semiconductor chip and the external lead, and an opposing main surface of the chip support for dissipating heat of the semiconductor chip. A conductive heat sink, an insulator disposed between the chip support and the heat sink, the semiconductor chip, the chip support, a part of the external lead, the internal connection conductor, and the heat radiation. A body and an insulator encapsulant covering the insulator, wherein the insulator comprises a sheet-like object having a compressibility higher than that of the insulator encapsulant, and is compressed to support the chip. body It is intended according to the semiconductor device according to claim in close contact. As described in claim 2, it is desirable that the sheet-like object contains glass fiber.
【０００５】[0005]
【発明の作用及び効果】本発明においては、チップ支持
体と放熱体との間に圧縮率の大きいシート状絶縁体を配
置するので、チップ支持体に良好に密着し、半導体チッ
プの熱を良好に放出することができる。また、シート状
絶縁体の品質チェックを組立前に行うことが可能である
ので、製造歩留りを高めることができる。また、構造が
簡単であるので、容易に製造することができる。請求項
２に示すようにシート状物体にガラス繊維を含めると、
ガラス繊維の太さによって制限された比較的薄い絶縁間
隔を確実に得ることができる。即ち、チップ支持体と放
熱体との間に信頼性の高い絶縁体層を容易に得ることが
できる。According to the present invention, since the sheet-like insulator having a large compression ratio is arranged between the chip support and the heat radiator, the chip support is well adhered to the semiconductor chip and the heat of the semiconductor chip is good. Can be released to. Further, since it is possible to check the quality of the sheet-shaped insulator before assembling, it is possible to improve the manufacturing yield. Further, since the structure is simple, it can be easily manufactured. When glass fiber is included in the sheet-like object as shown in claim 2,
It is possible to reliably obtain a relatively thin insulation distance limited by the thickness of the glass fiber. That is, a highly reliable insulator layer can be easily obtained between the chip support and the heat radiator.
【０００６】[0006]
【実施例】次に、図１〜図６を参照して本発明の一実施
例に係わる樹脂封止型の電力用半導体装置を説明する。
図１に示す電力用半導体装置は、トランジスタチップ及
びＩＣチップから成る複数個の半導体チップ１と、リー
ドフレームに基づいて得られた金属板からなる複数のチ
ップ支持体２と、外部リード３と、内部接続導体４及び
５と、金属板からなる放熱体即ちヒートシンク６と、シ
ート状絶縁体７と、絶縁物封止体即ち樹脂封止体８とか
ら成る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A resin-sealed power semiconductor device according to an embodiment of the present invention will be described with reference to FIGS.
The power semiconductor device shown in FIG. 1 includes a plurality of semiconductor chips 1 composed of transistor chips and IC chips, a plurality of chip supports 2 composed of a metal plate obtained based on a lead frame, and external leads 3. The internal connection conductors 4 and 5, a heat sink or heat sink 6 made of a metal plate, a sheet-shaped insulator 7, and an insulator sealing body or resin sealing body 8.
【０００７】図１の半導体装置を製造するには、まず図
２に示すリードフレーム９を用意する。このリードフレ
ーム９は、複数のチップ支持体２と、支持体２の配列方
向に並置した多数の外部リード３と、板状接続導体５
と、細条１０、１１、１２と、連結部１３とを有し、厚
さ約０．５ｍｍの銅板を打抜いて形成される。図２には
リードフレーム９の半導体装置１個分のみが示されてい
るが、実際には複数の半導体装置を得るために図２と同
一のものが複数個長手に連結されている。To manufacture the semiconductor device of FIG. 1, first, the lead frame 9 shown in FIG. 2 is prepared. The lead frame 9 includes a plurality of chip supports 2, a large number of external leads 3 juxtaposed in the arrangement direction of the supports 2, and a plate-shaped connecting conductor 5.
It has strips 10, 11, 12 and a connecting portion 13, and is formed by punching out a copper plate having a thickness of about 0.5 mm. Although only one semiconductor device of the lead frame 9 is shown in FIG. 2, a plurality of the same devices as those in FIG. 2 are actually connected in a longitudinal direction in order to obtain a plurality of semiconductor devices.
【０００８】リードフレーム９のチップ支持体２の一方
の主面（表面）には半導体チップ１を半田（図示せず）
で固着し、この半導体チップ１と外部リード３との間及
び半導体チップ１の相互間及び半導体チップ１と接続導
体５との間をワイヤから成る内部接続導体４によって接
続し、チップ・リードフレーム組立体を形成する。The semiconductor chip 1 is soldered (not shown) on one main surface (front surface) of the chip support 2 of the lead frame 9.
The semiconductor chip 1 and the external leads 3 and the semiconductor chips 1 and the semiconductor chip 1 and the connection conductors 5 are connected to each other by the internal connection conductors 4 made of wires, Form a solid.
【０００９】次に、ヒートシンク（放熱板）６を用意す
る。このヒートシンク６は、厚さ約２ｍｍのアルミニウ
ム板を打抜いたものであり、図３に示す平面パターンを
有する。このヒートシンク６には２つの貫通孔６ａが設
けられ、また下面の周縁に段部６ｂが設けられ、周縁の
厚みが中央部よりも薄くなっている。Next, a heat sink (heat sink) 6 is prepared. The heat sink 6 is an aluminum plate having a thickness of about 2 mm, which is punched out and has a plane pattern shown in FIG. The heat sink 6 is provided with two through holes 6a, and a step portion 6b is provided on the peripheral edge of the lower surface so that the peripheral edge is thinner than the central portion.
【００１０】次に、絶縁体７を用意する。この絶縁体７
はシート状又は平板状に形成されており、且つ図４に示
すように網目状に配置されたガラス繊維７ａにボロンナ
イトライド粉末を含有するシリコーンゴム７ｂを塗着し
たものから成る。絶縁体７は図５に示すように平面形状
がヒートシンク６のそれよりも若干大きく、ヒートシン
ク６の孔６ａに対応する孔１５を有する。シリコーンゴ
ムは弾性を有する絶縁性樹脂であるので、絶縁体７とし
ても弾力性を有し、モールド前には約１００μｍの厚さ
を有するが、モールドによって厚み方向に圧力が加わる
と５〜１０％薄くなる。要するに、シート状絶縁体７の
圧縮率は樹脂封止体８のそれよりも大幅に大きい。この
絶縁体７はモールド前にヒートシンク６の上面に接着材
（図示せず）によって接着する。この時、絶縁体７はこ
の孔１５とヒートシンク６の孔６ａとが一致するように
位置決めし、且つ絶縁体７の周縁がヒートシンク６の周
縁よりも外側にわずかに突出するように配置する。Next, the insulator 7 is prepared. This insulator 7
Is formed into a sheet shape or a flat plate shape, and is composed of glass fibers 7a arranged in a mesh shape as shown in FIG. 4 and coated with silicone rubber 7b containing boron nitride powder. As shown in FIG. 5, the insulator 7 is slightly larger than that of the heat sink 6 in plan view and has a hole 15 corresponding to the hole 6 a of the heat sink 6. Since silicone rubber is an insulating resin having elasticity, it has elasticity as the insulator 7 and has a thickness of about 100 μm before the molding, but when pressure is applied in the thickness direction by the molding, it is 5 to 10%. Become thin. In short, the compressibility of the sheet-shaped insulator 7 is significantly larger than that of the resin sealing body 8. This insulator 7 is adhered to the upper surface of the heat sink 6 with an adhesive (not shown) before molding. At this time, the insulator 7 is positioned so that the hole 15 and the hole 6a of the heat sink 6 are aligned with each other, and the peripheral edge of the insulator 7 is arranged so as to slightly project outside the peripheral edge of the heat sink 6.
【００１１】次に、図６に示すように絶縁体７付きのヒ
ートシンク６を絶縁体７を上側にしてトランスファモー
ルド用金型１６の成形空所１７の底面に密着させて配置
する。成形空所１７は形成すべき樹脂封止体の外形に合
致した形状を有し、その一方の側面には樹脂注入用孔１
８を有する。なお、金型１６は上型１６ａと下型１６ｂ
に分割されている。続いて、ヒートシンク６に接着され
た絶縁体７の上面に図２に示すリードフレーム９を重ね
て配置する。ヒートシンク６及び絶縁体７は１個分の半
導体装置の支持体２の全部を載置することができる面積
を有する。この時、リードフレーム９の外部リード３と
連結部１３とを上下の型１６ａ、１６ｂで挟持し、且つ
リードフレーム９の下面を絶縁体７に密着させる。Next, as shown in FIG. 6, the heat sink 6 with the insulator 7 is placed in close contact with the bottom of the molding cavity 17 of the transfer mold 16 with the insulator 7 on the upper side. The molding cavity 17 has a shape matching the outer shape of the resin sealing body to be formed, and the resin injection hole 1 is formed on one side surface thereof.
Have eight. The mold 16 includes an upper mold 16a and a lower mold 16b.
Is divided into Then, the lead frame 9 shown in FIG. The heat sink 6 and the insulator 7 have an area capable of mounting the entire one support 2 of the semiconductor device. At this time, the outer lead 3 of the lead frame 9 and the connecting portion 13 are sandwiched between the upper and lower molds 16a and 16b, and the lower surface of the lead frame 9 is brought into close contact with the insulator 7.
【００１２】次に、樹脂注入口１８から成形空所１７内
に流動化した封止用樹脂（例えばエポキシ樹脂）を押圧
注入する。成形空所１７内に樹脂が完全に充填される
と、充填された樹脂によってリードフレーム９のチップ
支持体２が絶縁体７に対して押しつけられる。この結
果、絶縁体７が弾性変形で若干薄くなった状態でチップ
支持体２とヒートシンク６で挟持され、これ等に密着す
る。なお、ヒートシンク６の底面の周縁に図１に示すよ
うに段部６ｂがあり、樹脂封止体８はこの段部６ｂにも
充填されるので、ヒートシンク６が樹脂封止体８に強固
に一体化され、且つ絶縁体７がチップ支持体２とヒート
シンク６で強く挟持される。成形空所１７内の樹脂が硬
化したら、組立体を金型１６から取り出し、細条１０、
１１を切断除去すると共に細条１２も連結部１３を破断
して除去する。なお、樹脂封止体８は、半導体チップ
１、支持体２、外部リード３の一部、内部接続導体４、
５、ヒートシンク６の下面を除く部分、絶縁体７を被覆
するように形成する。Next, the fluidized sealing resin (eg, epoxy resin) is pressure injected from the resin injection port 18 into the molding space 17. When the molding space 17 is completely filled with the resin, the chip support 2 of the lead frame 9 is pressed against the insulator 7 by the filled resin. As a result, the insulator 7 is sandwiched between the chip support 2 and the heat sink 6 in a state where the insulator 7 is slightly deformed due to elastic deformation, and is closely attached to them. As shown in FIG. 1, the heat sink 6 has a step portion 6b on the periphery of the bottom surface thereof, and the resin sealing body 8 is also filled in the step portion 6b. Therefore, the heat sink 6 is firmly integrated with the resin sealing body 8. And the insulator 7 is strongly sandwiched between the chip support 2 and the heat sink 6. When the resin in the molding cavity 17 has hardened, the assembly is taken out of the mold 16 and the strip 10,
The strip 11 is cut and removed, and the strip 12 is also broken and removed. The resin encapsulant 8 includes the semiconductor chip 1, the support 2, a part of the external leads 3, the internal connecting conductors 4,
5, the heat sink 6 is formed so as to cover the portion other than the lower surface of the heat sink 6 and the insulator 7.
【００１３】本実施例の半導体装置においては、樹脂封
止体８よりも圧縮率の大きいシート状絶縁体７をチップ
支持体２とヒートシンク６との間に配置したので、絶縁
体７がこの圧縮を伴なってチップ支持体２及びヒートシ
ンク６に良好に密着し、半導体チップ１の熱をヒートシ
ンク６に良好に伝導することができる。また、シート状
絶縁体７をチップ支持体２とヒートシンク６との間に介
在させる構成であるので、半導体装置を比較的簡単に製
造することができる。また、チップ支持体２とヒートシ
ンク６との間の絶縁体７は樹脂封止体８によって形成す
るのではなく、成形の前に予め形成しておくので、良品
のみを使用することが可能になり、製造歩留りを高める
ことができる。また、絶縁体７は熱伝導性の良いボロン
ナイトライドを含み、且つガラス繊維を含んで比較的薄
く形成されているので、半導体チップ１の熱をヒートシ
ンク６に良好に伝えることができる。また、ガラス繊維
を含めることによって信頼性が高く且つ薄い絶縁体７を
提供することができる。なお、ガラス繊維は、エポキシ
樹脂等の樹脂封止体８よりは熱伝導性が高いので、熱伝
導をさほど阻害しない。In the semiconductor device of this embodiment, the sheet-shaped insulator 7 having a compression rate higher than that of the resin sealing body 8 is arranged between the chip support 2 and the heat sink 6, so that the insulator 7 is compressed. Accordingly, the heat can be well adhered to the chip support 2 and the heat sink 6, and the heat of the semiconductor chip 1 can be well conducted to the heat sink 6. Moreover, since the sheet-shaped insulator 7 is interposed between the chip support 2 and the heat sink 6, the semiconductor device can be manufactured relatively easily. Moreover, since the insulator 7 between the chip support 2 and the heat sink 6 is not formed by the resin sealing body 8 but is formed in advance before molding, it is possible to use only good products. The manufacturing yield can be increased. Further, since the insulator 7 contains boron nitride having good thermal conductivity and is formed to be relatively thin by containing glass fiber, the heat of the semiconductor chip 1 can be satisfactorily transferred to the heat sink 6. Further, by including glass fiber, it is possible to provide a highly reliable and thin insulator 7. Since the glass fiber has a higher thermal conductivity than the resin sealing body 8 such as an epoxy resin, it does not hinder the thermal conduction so much.
【００１４】[0014]
【変形例】本発明は上述の実施例に限定されるものでな
く、変形可能なものである。例えば、絶縁体７をヒート
シンク６に接着させずにヒートシンク６の上に単に配置
した状態で樹脂モールドすることができる。[Modification] The present invention is not limited to the above-mentioned embodiment, but can be modified. For example, the insulator 7 may not be adhered to the heat sink 6 but may be simply placed on the heat sink 6 and resin-molded.
【図１】実施例の半導体装置を示す断面図である。FIG. 1 is a cross-sectional view showing a semiconductor device of an example.
【図２】図１の半導体装置を構成するための半導体チッ
プとリードフレームとの組立体を示す平面図である。FIG. 2 is a plan view showing an assembly of a semiconductor chip and a lead frame for forming the semiconductor device of FIG.
【図３】図１のヒートシンクの平面図である。FIG. 3 is a plan view of the heat sink of FIG.
【図４】図１の絶縁体の拡大断面図である。FIG. 4 is an enlarged sectional view of the insulator of FIG.
【図５】図３のヒートシンクの上に絶縁体を配置した状
態を示す平面図である。5 is a plan view showing a state in which an insulator is arranged on the heat sink of FIG.
【図６】図１の半導体装置を製造するために金型にヒー
トシンクと絶縁体とチップを有するリードフレームとを
装着した状態を示す断面図である。6 is a cross-sectional view showing a state in which a heat sink, an insulator, and a lead frame having a chip are mounted on a mold for manufacturing the semiconductor device of FIG.
１ 半導体チップ ２ チップ支持体 ６ ヒートシンク ７ 絶縁体 1 semiconductor chip 2 chip support 6 heat sink 7 insulator
Claims (2)
体チップが固着された導電性を有するチップ支持体と、 前記半導体チップを外部回路に接続するための外部リー
ドと、 前記半導体チップと前記外部リードとを接続する内部接
続導体と、 前記半導体チップの熱を放出するために前記チップ支持
体の他方の主面に対向配置された導電性を有する放熱体
と、 前記チップ支持体と前記放熱体との間に配置された絶縁
体と、 前記半導体チップと前記チップ支持体と前記外部リード
の一部と前記内部接続導体と前記放熱体と前記絶縁体と
を被覆する絶縁物封止体とを備え、前記絶縁体が前記絶
縁物封止体の圧縮率よりも大きい圧縮率を有するシート
状物体から成り、圧縮されて前記チップ支持体に密着し
ていることを特徴とする半導体装置。1. A semiconductor chip, a conductive chip support having the semiconductor chip fixed to one main surface, external leads for connecting the semiconductor chip to an external circuit, the semiconductor chip and the semiconductor chip. An internal connection conductor for connecting an external lead, a conductive heat radiator arranged opposite to the other main surface of the chip support for radiating heat of the semiconductor chip, the chip support and the heat radiation An insulator arranged between the body and the semiconductor chip, the chip support, a part of the external lead, the internal connection conductor, the radiator and the insulator sealing body covering the insulator. A semiconductor device comprising: a sheet-shaped object having a compressibility higher than that of the insulator encapsulant, the insulator being compressed and being in close contact with the chip support.
たガラス繊維と、前記ガラス繊維を被覆する弾力性を有
する絶縁性樹脂とから成ることを特徴とする請求項２記
載の半導体装置。2. The semiconductor device according to claim 2, wherein the sheet-like object is composed of glass fibers arranged in a mesh shape and an insulating resin having elasticity that coats the glass fibers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4245777A JPH0669384A (en) | 1992-08-21 | 1992-08-21 | Insulator sealing type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4245777A JPH0669384A (en) | 1992-08-21 | 1992-08-21 | Insulator sealing type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0669384A true JPH0669384A (en) | 1994-03-11 |
Family
ID=17138668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4245777A Pending JPH0669384A (en) | 1992-08-21 | 1992-08-21 | Insulator sealing type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0669384A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008502159A (en) * | 2004-06-04 | 2008-01-24 | クリー インコーポレイテッド | Power light emitting die package having a reflective lens and method of manufacturing |
| JP2009111154A (en) * | 2007-10-30 | 2009-05-21 | Mitsubishi Electric Corp | Power semiconductor module |
| JP2012094883A (en) * | 2011-12-07 | 2012-05-17 | Mitsubishi Electric Corp | Manufacturing method of heat radiation member and semiconductor device using heat radiation member |
-
1992
- 1992-08-21 JP JP4245777A patent/JPH0669384A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008502159A (en) * | 2004-06-04 | 2008-01-24 | クリー インコーポレイテッド | Power light emitting die package having a reflective lens and method of manufacturing |
| JP2011176347A (en) * | 2004-06-04 | 2011-09-08 | Cree Inc | Power light emitting die package with reflecting lens |
| US8446004B2 (en) | 2004-06-04 | 2013-05-21 | Cree, Inc. | Power light emitting die package with reflecting lens and the method of making the same |
| US8932886B2 (en) | 2004-06-04 | 2015-01-13 | Cree, Inc. | Power light emitting die package with reflecting lens and the method of making the same |
| JP2009111154A (en) * | 2007-10-30 | 2009-05-21 | Mitsubishi Electric Corp | Power semiconductor module |
| JP2012094883A (en) * | 2011-12-07 | 2012-05-17 | Mitsubishi Electric Corp | Manufacturing method of heat radiation member and semiconductor device using heat radiation member |
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