JPH0661336A - Electrostatic wafer chuck - Google Patents
Electrostatic wafer chuckInfo
- Publication number
- JPH0661336A JPH0661336A JP21008992A JP21008992A JPH0661336A JP H0661336 A JPH0661336 A JP H0661336A JP 21008992 A JP21008992 A JP 21008992A JP 21008992 A JP21008992 A JP 21008992A JP H0661336 A JPH0661336 A JP H0661336A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- dielectric film
- sample table
- electrostatic
- electrostatic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体ウエハ（以下
ウエハという）の静電吸着装置に係り、特に直流電圧印
加時に発生する静電場緩和対策に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chucking device for a semiconductor wafer (hereinafter referred to as a wafer), and more particularly to a measure for mitigating an electrostatic field generated when a DC voltage is applied.
【０００２】[0002]
【従来の技術】図６は従来のウエハの静電吸着装置の基
本的な構造の断面図であり、図において、１は直流電圧
を印加することのできる試料台、２はこの試料台１上に
形成された誘電体膜、３は上記試料台１上に誘電体膜２
を介して載置される被処理物であるウエハ、４は試料台
１に直流電圧を供給するための直流電源である。2. Description of the Related Art FIG. 6 is a sectional view of the basic structure of a conventional electrostatic chucking apparatus for wafers. In FIG. 6, 1 is a sample stage to which a DC voltage can be applied, and 2 is the sample stage 1 above. And the dielectric film 3 formed on the sample table 1
A wafer, which is an object to be processed and is placed via the, is a DC power source for supplying a DC voltage to the sample stage 1.
【０００３】従来のウエハの静電吸着装置は上記のよう
に構成されており、ウエハ３を誘電体膜２上に載置した
状態で直流電源４により直流電圧を試料台１に印加する
と、ウエハ３が静電的に試料台１に固定されるようにな
っている。The conventional electrostatic chucking device for a wafer is constructed as described above. When a DC voltage is applied to the sample stage 1 by the DC power supply 4 with the wafer 3 placed on the dielectric film 2, the wafer is 3 is electrostatically fixed to the sample table 1.
【０００４】[0004]
【発明が解決しようとする課題】上記のような従来の静
電吸着装置では、直流電源４により試料台１に直流電圧
を印加しウエハ３を固定する際に、試料台１のウエハ固
定位置以外の部分とウエハ３の間に静電場５が発生す
る。In the conventional electrostatic chucking device as described above, when a DC voltage is applied to the sample table 1 by the DC power source 4 to fix the wafer 3, the sample table 1 is not fixed at the wafer fixing position. An electrostatic field 5 is generated between the portion of 3 and the wafer 3.
【０００５】この際、反応性イオンエッチング、荷電ビ
ーム露光等の荷電粒子を用いて処理を行う場合には、上
記により発生した静電場５が荷電粒子に影響し、所望の
処理が行えないという問題点があった。At this time, when the treatment is performed by using charged particles such as reactive ion etching and charged beam exposure, the electrostatic field 5 generated as described above affects the charged particles and the desired treatment cannot be performed. There was a point.
【０００６】この発明は上記のような問題点を解消する
ためになされたもので、試料台のウエハ固定位置以外の
部分とウエハの間に発生する静電場が弱くなるようにし
たウエハの静電吸着装置を得ることを目的とする。The present invention has been made in order to solve the above-mentioned problems. The electrostatic field of the wafer is designed so that the electrostatic field generated between the wafer and a portion other than the wafer fixing position of the sample table is weakened. The purpose is to obtain an adsorption device.
【０００７】[0007]
【課題を解決するための手段】この発明の請求項１のウ
エハの静電吸着装置は、試料台の誘電体膜上に載置され
たウエハの固定位置以外の周りの表面を覆うAl2O3・SiC
等からなる絶縁体カバーを備えたものである。According to a first aspect of the present invention, there is provided an electrostatic chucking device for a wafer, wherein the surface of the wafer mounted on the dielectric film of the sample stage is covered with Al 2 O except for the fixed position. 3・ SiC
And an insulator cover made of
【０００８】この発明の請求項２のウエハの静電吸着装
置は、試料台の直径および誘電体膜の直径をウエハの直
径とほぼ等しくし、それよりも外側の部分をAl2O3・SiC
等からなる絶縁体カバーにより囲ったものである。According to a second aspect of the present invention, in the electrostatic chucking device for a wafer, the diameter of the sample stage and the diameter of the dielectric film are made substantially equal to the diameter of the wafer, and the portion outside thereof is Al 2 O 3 .SiC.
It is surrounded by an insulator cover made of the like.
【０００９】この発明の請求項３のウエハの静電吸着装
置は、試料台のウエハ固定位置以外のウエハ周辺部まで
の部分を覆う金属板と、この金属板と試料台との間に介
装された絶縁体カバーを備えたものである。According to a third aspect of the present invention, there is provided an electrostatic chucking device for a wafer, wherein a metal plate covering a portion other than the wafer fixing position of the sample table up to the peripheral portion of the wafer and a metal plate interposed between the metal plate and the sample table. It is provided with an insulated cover.
【００１０】[0010]
【作用】上記のように構成された静電吸着装置では、ウ
エハ固定位置以外の部分は、Al2O3・SiC等からなる絶縁
体カバーにより覆われているので、この絶縁体カバー
が、発生する静電場を緩和する役目を果たし、その結
果、試料台のウエハ固定位置以外の部分とウエハの間に
発生する静電場を弱くすることができる。In the electrostatic chucking device configured as described above, the portions other than the wafer fixing position are covered with the insulator cover made of Al 2 O 3 , SiC, etc. This serves to reduce the electrostatic field generated, and as a result, the electrostatic field generated between the wafer and a portion of the sample stage other than the wafer fixing position can be weakened.
【００１１】また、ウエハ固定位置以外のウエハ周辺部
までの部分の表面を覆うように形成された金属板によ
り、試料台のウエハが載置されている以外の部分とウエ
ハの間に発生する静電場を遮蔽することができる。Further, the metal plate formed so as to cover the surface of the portion up to the peripheral portion of the wafer other than the wafer fixing position causes static electricity generated between the portion of the sample table other than the portion on which the wafer is mounted and the wafer. The electric field can be shielded.
【００１２】[0012]
【実施例】実施例１．図１はこの発明の一実施例を示す
断面図であり、１〜４は上記従来装置と全く同一のもの
である。６は誘電体膜２上に載置され、ウエハ３の固定
位置以外の周りの表面を覆うAl2O3・SiC等からなるリン
グ状の絶縁体カバーである。このような絶縁体カバー６
を設けることにより、この絶縁体カバーが、発生する静
電場を緩和する役目を果たし、その結果、試料台のウエ
ハ固定位置以外の部分とウエハの間に発生する静電場を
弱くすることができる。EXAMPLES Example 1. FIG. 1 is a sectional view showing an embodiment of the present invention, in which 1 to 4 are exactly the same as the above-mentioned conventional device. Reference numeral 6 denotes a ring-shaped insulator cover made of Al 2 O 3 .SiC or the like, which is placed on the dielectric film 2 and covers the surface of the wafer 3 other than the fixed position. Such an insulator cover 6
By providing the above, the insulator cover plays a role of mitigating the generated electrostatic field, and as a result, the electrostatic field generated between the portion of the sample table other than the wafer fixing position and the wafer can be weakened.
【００１３】実施例２．また図２はこの発明の実施例２
を示す断面図であり、試料台１の直径をウエハ３の直径
とほぼ等しくして、その上面の全面に誘電体膜２を形成
し、この試料台の外側の部分に、それらを取り囲むよう
にAl2O3・SiC等からなるリング状絶縁体カバー７を備え
たものである。このように構成することにより、絶縁体
カバーが、発生する静電場を緩和する役目を果たし、そ
の結果、試料台のウエハ固定位置以外の部分とウエハの
間に発生する静電場を弱くすることができる。Example 2. 2 is a second embodiment of the present invention.
FIG. 3 is a cross-sectional view showing a sample table 1 having a diameter substantially equal to that of a wafer 3, a dielectric film 2 is formed on the entire upper surface of the sample table 1, and an outer portion of the sample table is surrounded by them. It is provided with a ring-shaped insulator cover 7 made of Al 2 O 3 .SiC or the like. With this configuration, the insulator cover serves to mitigate the electrostatic field that is generated, and as a result, the electrostatic field that is generated between the portion of the sample table other than the wafer fixing position and the wafer can be weakened. it can.
【００１４】試料台上に誘電体膜を塗布するに当り、最
初から誘電体膜をウエハと同じ面積で形成することは困
難であるが、この実施例２によれば、はじめにウエハの
ステージ部分を同一面積に設定しているので、作業性が
良いものとなる。When coating the dielectric film on the sample table, it is difficult to form the dielectric film in the same area as the wafer from the beginning, but according to the second embodiment, first, the stage portion of the wafer is Since they are set in the same area, workability is good.
【００１５】実施例３．図３はこの発明の実施例３を示
す断面図であり、図において、１〜４は従来装置と同一
である。６は図１と同様に試料台１と誘電体膜２の外周
部分に装着された絶縁体カバー、８はさらにこの絶縁体
カバー６の外周を覆い、ウエハが載置されている以外の
部分とウエハの間に発生する静電場を遮蔽するための金
属板であり、ウエハ固定位置以外のウエハ周辺部までの
部分の表面を覆うように形成され、かつ試料台１とは上
記絶縁体カバー６の介在によって電気的に絶縁されてい
る。Example 3. 3 is a sectional view showing a third embodiment of the present invention. In the figure, 1 to 4 are the same as the conventional device. 6 is an insulator cover mounted on the outer periphery of the sample table 1 and the dielectric film 2 as in FIG. 1, and 8 is a portion other than the portion on which the wafer is placed, which covers the outer periphery of the insulator cover 6. A metal plate for shielding an electrostatic field generated between the wafers, which is formed so as to cover the surface of the portion other than the wafer fixing position to the peripheral portion of the wafer, and the sample table 1 and the insulator cover 6 It is electrically insulated by the interposition.
【００１６】上記のように構成された装置においては、
金属板８によって、ウエハが載置されている以外の部分
とウエハの間に発生する静電場は遮蔽される。In the device constructed as described above,
The metal plate 8 shields an electrostatic field generated between the wafer and a portion other than where the wafer is placed.
【００１７】実施例４．図４はこの発明の実施例４を示
す断面図であり、図３のものに、金属板８を接地する手
段９を付加したものである。Embodiment 4. FIG. 4 is a sectional view showing a fourth embodiment of the present invention, in which a means 9 for grounding the metal plate 8 is added to the one shown in FIG.
【００１８】このように構成された装置においては、外
部からの影響によって金属板８の電位（ポテンシャル）
が移動するのを防ぎ、金属板の電位を固定することがで
き、かつ静電場を遮蔽することができる。In the device thus constructed, the potential of the metal plate 8 is affected by external influences.
Can be prevented from moving, the potential of the metal plate can be fixed, and the electrostatic field can be shielded.
【００１９】実施例５．図５はこの発明の実施例５を示
す断面図であり、図３のものに加えて、金属板８の外側
を覆うような第２のカバー１０を装着したものである。Example 5. FIG. 5 is a cross-sectional view showing a fifth embodiment of the present invention, in which, in addition to the one shown in FIG. 3, a second cover 10 for covering the outside of the metal plate 8 is mounted.
【００２０】このように構成された装置においては、静
電場を遮蔽するとともに、金属板８によるウエハ３への
金属汚染を防ぐことができる。In the apparatus thus constructed, it is possible to shield the electrostatic field and prevent metal contamination of the wafer 3 by the metal plate 8.
【００２１】[0021]
【発明の効果】以上のようにこの発明によれば、ウエハ
固定位置以外の周りの部分はAl2O3・SiC等からなる絶縁
体カバーにより覆われているので、絶縁体カバーが、発
生する静電場を緩和する役目を果たし、その結果、試料
台のウエハ固定位置以外の部分とウエハの間に発生する
静電場を弱くすることができる。それにより、反応性イ
オンエッチング、荷電ビーム露光等の荷電粒子を用いて
処理を行う場合にも、荷電粒子が静電場により悪影響を
受けることがなくなり、所望の処理を行うことができ
る。As described above, according to the present invention, since the peripheral portion other than the wafer fixing position is covered with the insulator cover made of Al 2 O 3 .SiC or the like, the insulator cover is generated. This serves to mitigate the electrostatic field, and as a result, the electrostatic field generated between the wafer and a portion of the sample stage other than the wafer fixing position can be weakened. As a result, even when performing processing using charged particles such as reactive ion etching and charged beam exposure, the charged particles are not adversely affected by the electrostatic field, and desired processing can be performed.
【００２２】また、ウエハ固定位置以外のウエハ周辺部
までの部分の表面を覆う金属板により、試料台とウエハ
の間に発生する静電場を遮蔽することができ、反応性イ
オンエッチングあるいは荷電ビーム露光などの荷電粒子
を用いて処理行う場合においても、荷電粒子が静電場に
よる悪影響を受けることなく所望の処理を行うことがで
きる。Further, the electrostatic field generated between the sample stage and the wafer can be shielded by the metal plate covering the surface of the portion other than the wafer fixing position up to the peripheral portion of the wafer, and reactive ion etching or charged beam exposure can be performed. Even when the treatment is performed using charged particles such as, the desired treatment can be performed without the charged particles being adversely affected by the electrostatic field.
【図１】この発明の実施例１によるウエハの静電吸着装
置を示す断面図である。FIG. 1 is a sectional view showing a wafer electrostatic chucking device according to a first embodiment of the present invention.
【図２】この発明の実施例２によるウエハの静電吸着装
置を示す断面図である。FIG. 2 is a cross-sectional view showing a wafer electrostatic chucking device according to a second embodiment of the present invention.
【図３】この発明の実施例３によるウエハの静電吸着装
置を示す断面図である。FIG. 3 is a sectional view showing a wafer electrostatic chucking device according to a third embodiment of the present invention.
【図４】この発明の実施例４によるウエハの静電吸着装
置を示す断面図である。FIG. 4 is a sectional view showing a wafer electrostatic chucking device according to a fourth embodiment of the present invention.
【図５】この発明の実施例５によるウエハの静電吸着装
置を示す断面図である。FIG. 5 is a sectional view showing a wafer electrostatic chucking device according to a fifth embodiment of the present invention.
【図６】従来のウエハの静電吸着装置の断面図である。FIG. 6 is a sectional view of a conventional wafer electrostatic chucking device.
１ 試料台 ２ 誘電体膜 ３ ウエハ ４ 電源 ５ 静電場 ６，７ 絶縁体カバー ８ 金属板 ９ 接地手段 １０ 第２のカバー 1 sample stage 2 dielectric film 3 wafer 4 power supply 5 electrostatic field 6, 7 insulator cover 8 metal plate 9 grounding means 10 second cover
───────────────────────────────────────────────────── フロントページの続き (72)発明者 豊田 正人 伊丹市瑞原４丁目１番地 三菱電機株式会 社北伊丹製作所内 (72)発明者 大寺 廣樹 尼崎市塚口本町８丁目１番１号 三菱電機 株式会社中央研究所内 (72)発明者 岡村 康一郎 尼崎市塚口本町８丁目１番１号 三菱電機 株式会社生産技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masato Toyota 4-1-1 Mizuhara, Itami-shi Kita-Itami Works (72) Inventor Hiroki Ohtera 8-1-1 Tsukaguchihonmachi, Amagasaki Mitsubishi Electric Corporation Company Central Research Institute (72) Inventor Koichiro Okamura 8-1-1 Tsukaguchihonmachi, Amagasaki City Mitsubishi Electric Corporation
Claims (3)
成し、この誘電体膜上にウエハを載置し、上記試料台に
直流電圧を印加することにより、上記誘電体膜を介して
ウエハを静電的に固定する静電吸着装置において、上記
ウエハの固定位置以外のウエハ周辺部までの部分を覆う
静電場緩和用絶縁体カバーを備えたウエハの静電吸着装
置。1. A dielectric film is formed on a wafer fixing surface side of a sample table, a wafer is placed on the dielectric film, and a DC voltage is applied to the sample table so that the dielectric film is passed through the dielectric film. An electrostatic attraction device for electrostatically fixing a wafer by means of an electrostatic attraction device, comprising an electrostatic field mitigating insulator cover for covering a portion up to the wafer peripheral portion other than the wafer fixing position.
成し、この誘電体膜上にウエハを載置し、上記試料台に
直流電圧を印加することにより、上記誘電体膜を介して
ウエハを静電的に固定する静電吸着装置において、上記
試料台の直径をウエハの直径とほぼ等しくしてその全面
に誘電体膜を形成し、上記試料台の外側面を取り囲む静
電場緩和用絶縁体カバーを備えたウエハの静電吸着装
置。2. A dielectric film is formed on the wafer fixing surface side of the sample table, the wafer is placed on the dielectric film, and a DC voltage is applied to the sample table so that the dielectric film passes through the dielectric film. In an electrostatic adsorption device that electrostatically fixes the wafer with a wafer, the diameter of the sample table is made substantially equal to the diameter of the wafer, and a dielectric film is formed on the entire surface to relax the electrostatic field surrounding the outer surface of the sample table. Electrostatic chucking device for wafers with an insulating cover.
成し、この誘電体膜上にウエハを載置し、上記試料台に
直流電圧を印加することにより、上記誘電体膜を介して
ウエハを静電的に固定する静電吸着装置において、上記
試料台と誘電体膜の外周部分に装着された絶縁体カバー
と、さらにこの絶縁体カバーの外周を覆うとともに、上
記ウエハ固定位置以外のウエハ周辺部までの部分の表面
を覆い、上記試料台とは上記絶縁体カバーによって電気
的に絶縁されている金属板を備えたウエハの静電吸着装
置。3. A dielectric film is formed on a wafer fixing surface side of a sample table, a wafer is placed on the dielectric film, and a DC voltage is applied to the sample table, so that the dielectric film is passed through the dielectric film. In an electrostatic adsorption device for electrostatically fixing a wafer by means of an electrostatic chuck, an insulator cover attached to the outer periphery of the sample table and the dielectric film, and further covering the outer periphery of the insulator cover, except for the wafer fixing position. An electrostatic chucking device for a wafer, which is provided with a metal plate which covers the surface up to the peripheral portion of the wafer and is electrically insulated from the sample table by the insulator cover.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21008992A JPH0661336A (en) | 1992-08-06 | 1992-08-06 | Electrostatic wafer chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21008992A JPH0661336A (en) | 1992-08-06 | 1992-08-06 | Electrostatic wafer chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0661336A true JPH0661336A (en) | 1994-03-04 |
Family
ID=16583643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21008992A Pending JPH0661336A (en) | 1992-08-06 | 1992-08-06 | Electrostatic wafer chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0661336A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4890798A (en) * | 1989-03-21 | 1990-01-02 | Sangojuuki Co., Ltd. | Structure crushing equipment |
| US7164571B2 (en) | 2004-02-19 | 2007-01-16 | Anelva Corporation | Wafer stage with a magnet |
-
1992
- 1992-08-06 JP JP21008992A patent/JPH0661336A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4890798A (en) * | 1989-03-21 | 1990-01-02 | Sangojuuki Co., Ltd. | Structure crushing equipment |
| US7164571B2 (en) | 2004-02-19 | 2007-01-16 | Anelva Corporation | Wafer stage with a magnet |
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