JPH033250A - Substrate holder - Google Patents
Substrate holderInfo
- Publication number
- JPH033250A JPH033250A JP1136867A JP13686789A JPH033250A JP H033250 A JPH033250 A JP H033250A JP 1136867 A JP1136867 A JP 1136867A JP 13686789 A JP13686789 A JP 13686789A JP H033250 A JPH033250 A JP H033250A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrostatic chuck
- tray
- cooled
- chuck electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000000112 cooling gas Substances 0.000 abstract description 15
- 230000005611 electricity Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000003068 static effect Effects 0.000 abstract description 7
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract 5
- 238000007664 blowing Methods 0.000 abstract 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、ドライエツチング装置、プラズマＣＶＤ装置
、スパッタリング装置、イオン注入装置等の半導体製造
装置に使用される基板保持装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a substrate holding device used in semiconductor manufacturing equipment such as dry etching equipment, plasma CVD equipment, sputtering equipment, and ion implantation equipment.
（従来の技術）
従来、上記の半導体製造装置に於いて、半導体基板等の
被処理物を、真空室内に設けた水冷電極の前面に取付け
た静電チャック電極に保持させ、該被処理物を冷却し乍
らこれにエツチング等の処理を施すことが行なわれてい
る。こうした場合、１個の静電チャック電極は１個の被
処理物を吸着保持するを一般とするもので、複数個の被
処理物を同時に処理する場合には複数個の水冷電極及び
静電チャック電極を設けている。(Prior Art) Conventionally, in the above-mentioned semiconductor manufacturing equipment, a workpiece such as a semiconductor substrate is held by an electrostatic chuck electrode attached to the front of a water-cooled electrode provided in a vacuum chamber, and the workpiece is While it is cooled, it is subjected to treatments such as etching. In such cases, one electrostatic chuck electrode generally attracts and holds one workpiece, but when processing multiple workpieces at the same time, multiple water-cooled electrodes and electrostatic chucks are used. Electrodes are provided.
また、被処理物が化合物半導体基板（例えばＧａＡｓ基
板）であるときは、基板が不定型であることが多く、定
型のものでも３ｉｎ程度の大きさであり、しかも割れ易
いために、二了’Ｅ室内を搬送するときに、トレイが用
いられることがあるが、被処理物をトレイに載せたまま
水冷電極に静電吸着させるには、例えば特開昭ｆｉ３−
５６９２０号公開公報に見られるように複雑な装置を水
冷電極に設けるを要する。In addition, when the object to be processed is a compound semiconductor substrate (for example, a GaAs substrate), the substrate is often of an amorphous shape, and even a regular shape is about 3 inches in size, and it is easily broken. A tray is sometimes used when transporting the workpiece in the E chamber, but in order to electrostatically adsorb the workpiece to the water-cooled electrode while it is placed on the tray, for example,
As seen in Publication No. 56920, it is necessary to provide a complicated device to the water-cooled electrode.
（発明が解決しようとする課題）
前記のように複数個の被処理物を同時に処理するために
水冷電極を複数個設けることは、真空室内が複雑化し、
真空室も大型化する不都合がある。また、トレイに載せ
て割れ易い化合物半導体基板の被処理物が搬送される場
合には、トレイの静電吸着のため水冷電極の構造が複雑
になる欠点があった。(Problems to be Solved by the Invention) Providing a plurality of water-cooled electrodes in order to simultaneously process a plurality of objects as described above complicates the vacuum chamber.
This also has the disadvantage of increasing the size of the vacuum chamber. Further, when a compound semiconductor substrate to be processed, which is easily broken, is transported on a tray, there is a drawback that the structure of the water-cooled electrode becomes complicated due to electrostatic adsorption of the tray.
本発明は、上記の不都合、欠点を解消し、簡単な構成で
トレイに載せた一枚もしくは複数枚の被処理物を同時に
保持し得る主として化合物半導体基板の処理に好都合な
基板保持装置を提供することを目的とするものである。The present invention solves the above-mentioned inconveniences and shortcomings, and provides a substrate holding device that is convenient for processing mainly compound semiconductor substrates and can simultaneously hold one or more processing objects placed on a tray with a simple configuration. The purpose is to
（課題を解決するための手段）
本発明では、真空室内に設けた水冷電極の前面に、静電
チャック電極を設けて該真空室内を搬送される被処理物
を静電吸着するようにしたものに於いて、該被処理物を
、該静電チャック電極に静電吸着される誘電体からなる
トレイにｇ２置することにより、前記目的を達成するよ
うにした。(Means for Solving the Problems) In the present invention, an electrostatic chuck electrode is provided in front of a water-cooled electrode provided in a vacuum chamber to electrostatically adsorb a workpiece being transported within the vacuum chamber. In this case, the object to be processed is placed on a tray g2 made of a dielectric material that is electrostatically attracted to the electrostatic chuck electrode, thereby achieving the above object.
この場合前記静電チャック電極を、２枚のセラミック絶
縁基板の間に導電パターンを介在させて一体に焼結した
もので構成し、前記トレイを導電パターンを形成したセ
ラミック絶縁基板で構成してもよい。In this case, the electrostatic chuck electrode may be composed of two ceramic insulating substrates that are integrally sintered with a conductive pattern interposed between them, and the tray may be composed of a ceramic insulating substrate on which a conductive pattern is formed. good.
（作 用）
水冷電極により冷却された静電チャック電極に高電圧を
印加し、該静電チャック電極の前面に、被処理物を栽せ
た誘電体からなるトレイを静電吸着させる。該トレイは
誘電体で形成されているので、その下の静電チャック電
極の前面に発生する静電荷によって静電荷を帯電し、被
処理物をトレイに静電吸着することが出来る。(Function) A high voltage is applied to the electrostatic chuck electrode cooled by the water-cooled electrode, and a tray made of a dielectric material on which the object to be processed is grown is electrostatically attracted to the front surface of the electrostatic chuck electrode. Since the tray is made of a dielectric material, it is possible to electrostatically charge the tray by electrostatic charges generated on the front surface of the electrostatic chuck electrode thereunder, and to electrostatically attract the object to be processed onto the tray.
該トレイは、その下の静電チャック電極との位置関係に
制限がなく、搬送中にトレイの方向が変わっても確実に
その下の静電チャック電極に吸着され、複数枚の被処理
物をトレイに載せた場合でも強い吸着力で各被処理物を
吸着することが出来、１つの水冷電極を作動させること
によって複数枚の被処理物を処理し得る。There are no restrictions on the positional relationship between the tray and the electrostatic chuck electrode below it, and even if the direction of the tray changes during transport, it will be reliably attracted to the electrostatic chuck electrode below it, allowing it to hold multiple objects to be processed. Even when placed on a tray, each object to be processed can be adsorbed with a strong adsorption force, and a plurality of objects to be processed can be processed by operating one water-cooled electrode.
（実施例）
本発明の実施例を図面第１図に基づき説明すると、同図
に於いて、符号（１）は真空室（２）の室壁（２ａ）に
設けたＭ製の水冷電極、（３）は該水冷電極（１）の前
面に形成した凹部（４）内に取付固定された静電チャッ
ク電極、（５）は該静電チャック電極（３）の静電気に
より吸着されるセラミック絶縁基板の誘電体からなるト
レイ、（６）は該トレイ（５）に裁せられて真空室（２
）内を搬送され、水冷電極（１）上に於いてドライエツ
チング、或はプラズマＣｖＤやスパッタリングの成膜処
理、或はイオン注入等の処理が施されるＧａＡｓ基板、
シリコン基板等の被処理物を示す。(Embodiment) An embodiment of the present invention will be explained based on FIG. (3) is an electrostatic chuck electrode installed and fixed in the recess (4) formed on the front surface of the water-cooled electrode (1), and (5) is a ceramic insulator that is attracted by the static electricity of the electrostatic chuck electrode (3). A tray (6) made of a dielectric substrate is cut onto the tray (5) and placed in a vacuum chamber (2).
), and is subjected to dry etching, plasma CVD or sputtering film formation processing, or ion implantation processing on the water-cooled electrode (1),
Indicates an object to be processed such as a silicon substrate.
該水冷電極（１）は、その内部に冷却水が循環する冷却
空間（７）を備えると共に内部を貫通する冷却ガスの流
通孔（８）及び２本のリード線種通孔（９ａ） （９ｂ
）を備え、該リード線挿通孔（９ａ） （９ｂ）にはセ
ラミック絶縁体からなる円筒（ＩＯ（ＩＯを夫々嵌着し
た。The water-cooled electrode (1) has a cooling space (7) in which cooling water circulates, and also has a cooling gas circulation hole (8) penetrating the inside and two lead wire type holes (9a) (9b).
), and a cylinder (IO) made of a ceramic insulator was fitted into the lead wire insertion holes (9a) and (9b), respectively.
該静電チャック電極〈３）は、前面のＡｌ２Ｏ３等のセ
ラミック絶縁基板（Ｉｔ）の内面に、第２図示のような
半円形の２つの導電パターン（１２ａ）（１２ｂ）を形
成したのち、該パターン（１２ａ）（１２ｂ）を挾んで
セラミック絶縁基板（′１３を重ね、一体に焼結し、更
にその背面から前面へと貫通する冷却ガス導入孔ｑＩＯ
及び導電パターン（１２ａ）（１２ｂ）へのリード線の
導孔（１５ａ） （１５ｂ）を開孔して形成するように
した。該静電チャック電極（３）は、好ましくは、金属
ボンディング（ＩＧにより水冷電極（１）の凹部（４）
内に取付固定され、その取付の際、水冷電極（１）の流
通孔（８）及びリード線種通孔（９ａ） （９ｂ）が静
電チャック電極（３）の冷却ガス導入孔ａ＠及び導孔（
１５ａ）（１５ｂ）に夫々合致するように設置される。The electrostatic chuck electrode (3) is made by forming two semicircular conductive patterns (12a) and (12b) as shown in the second figure on the inner surface of a ceramic insulating substrate (It) made of Al2O3 or the like on the front surface. The patterns (12a) and (12b) are sandwiched between the ceramic insulating substrates ('13) are stacked and sintered together, and cooling gas introduction holes qIO are formed which penetrate from the back side to the front side.
Also, conductive holes (15a) (15b) for lead wires to the conductive patterns (12a) (12b) are formed by opening them. The electrostatic chuck electrode (3) is preferably connected to the recess (4) of the water-cooled electrode (1) by metal bonding (IG).
During installation, the water-cooled electrode (1)'s flow hole (8) and lead wire type through-holes (9a) (9b) are connected to the cooling gas inlet hole a@ of the electrostatic chuck electrode (3) and Guide hole (
15a) and (15b), respectively.
トレイ（５）は、水冷電極（１）の四部（４）に適合す
る直径の例えばＡ１ｚｏ３の円板にて構成され、その前
面には被処理物（６）を安定に載せるために凹部θを形
成し、更に、下方の静電チャック電極（３）の冷却ガス
導入孔Ｇ＠に通じる冷却ガス吹出口（’＋７）を貫通し
て形成するようにした。The tray (5) is composed of a disk of A1zo3, for example, with a diameter that matches the four parts (4) of the water-cooled electrode (1), and a recess θ is formed on the front surface of the tray in order to stably place the object to be processed (6). Further, the cooling gas outlet ('+7) communicating with the cooling gas introduction hole G@ of the lower electrostatic chuck electrode (3) was formed to penetrate therethrough.
ａｇは、各導電パターン（１２ａ）（１２ｂ）へリード
線ａ■を介して接続される高圧直流電源である。ag is a high-voltage DC power supply connected to each conductive pattern (12a) (12b) via a lead wire a.
該トレイ（５）は、第３図及び第４図に示すように、背
面に環状の導電パターン■を形成したちであってもよく
、第５図及び第６図示のように放射状に導電パターン■
を形成してもよい。これらの場合、導電パターン■によ
って全面に略均−に分布する静電気を発生させることが
出来、被処理物（６）の吸着力が向上する。The tray (5) may have an annular conductive pattern (2) formed on its back surface as shown in FIGS. 3 and 4, or may have a radial conductive pattern (2) as shown in FIGS. ■
may be formed. In these cases, the conductive pattern (1) can generate static electricity that is distributed approximately evenly over the entire surface, and the adsorption power of the object (6) to be processed is improved.
また、静電チャック電極（３）の導電パターン（１２ａ
）（１２ｂ）を第７図及び第８図示のように互に入り組
んだパターンで形成してもよく、これに使用するトレイ
（５）として、第９図及び第１Ｏ図示のように２組の導
電パターン■■を形成し、２枚の被処理物（６）を載せ
ることも出来る。In addition, the conductive pattern (12a) of the electrostatic chuck electrode (3)
) (12b) may be formed in an intertwined pattern as shown in FIGS. 7 and 8, and two sets of trays (5) used for this may be used as shown in FIGS. 9 and 1O. It is also possible to form a conductive pattern ■■ and place two objects to be processed (6) thereon.
第１図示の実施例の作動を説明すると、高圧直流電源（
′ｌεから静電チャック電極（３）の導電パターン（１
２ａ）（１２ｂ）へ、例えば２ＫＶの直流高電圧を印加
して静電チャック電極（３）の前面に静電気を発生させ
、そこに被処理物（６）を載せたトレイ（５）を静電吸
着する。該トレイ（５）は、その下の静電チャック電極
（３）の静電気によって静電気を帯電し、被処理物（６
）を静電吸着する。次いで流通孔（８）、冷却ガス導入
孔（′ｌ＠及び冷却ガス吹出口０を通って冷却ガスを導
入し、被処理物（６）とトレイ（５）の微少なすきまを
介して真空室（２）内へと流し、冷却ガス吹出口（ＩＤ
のないトレイ（５）ではトレイ（５）と静電チャック電
極（３）とのすきまを介して冷却ガスを真空室（２）内
へと流すことによりトレイ（５）を介して被処理物（６
）を冷却する。そして水冷電極（１）に図示してない電
源から通電し、アノードとの間にプラズマを発生させ、
被処理物（６）を例えばエツチングする。該被処理物（
６）は、エツチング等の処理に伴って発熱するが、その
熱は水冷電極（１）により冷却された静電チャック電極
（３）へトレイ（５）を介して流れると共に冷却ガス或
は冷却されたトレイ（５）によって奪われ、被処理物（
６）が熱損傷しないように低温に維持される。To explain the operation of the embodiment shown in the first diagram, the high voltage DC power supply (
'lε to the conductive pattern (1) of the electrostatic chuck electrode (3)
2a) Apply a DC high voltage of, for example, 2KV to (12b) to generate static electricity on the front surface of the electrostatic chuck electrode (3), and then place the tray (5) on which the object to be processed (6) is placed on the electrostatic chuck electrode (3). Adsorb. The tray (5) is charged with static electricity by the static electricity of the electrostatic chuck electrode (3) below it, and the workpiece (6) is charged with static electricity.
) is electrostatically adsorbed. Next, the cooling gas is introduced through the circulation hole (8), the cooling gas introduction hole ('l@), and the cooling gas outlet 0, and the cooling gas is introduced into the vacuum chamber through the minute gap between the workpiece (6) and the tray (5). (2) Cooling gas outlet (ID
In the case of a tray (5) without an electrostatic chuck electrode (5), cooling gas is allowed to flow into the vacuum chamber (2) through the gap between the tray (5) and the electrostatic chuck electrode (3). 6
) to cool down. Then, the water-cooled electrode (1) is energized from a power source (not shown) to generate plasma between it and the anode.
For example, the object to be processed (6) is etched. The object to be processed (
6), heat is generated due to processing such as etching, but the heat flows through the tray (5) to the electrostatic chuck electrode (3) cooled by the water-cooled electrode (1), and is also cooled by cooling gas or the like. The object to be processed (
6) is maintained at a low temperature to avoid thermal damage.
（発明の効果）
以上のように本発明によるときは、水冷電極の静電チャ
ック電極に、被処理物を載せた誘電体のトレイを載せる
ようにしたので、被処理物をトレイと共に水冷電極に吸
着させることが出来、トレイに複数枚の被処理物を載せ
ることが可能で、１つの水冷電極で複数の被処理物の同
時処理を行なえ、真空室内の構造が複雑化する不都合も
なく、特に割れ易いＧａＡｓ基板の処理に好都合に適用
出来る等の効果がある。(Effects of the Invention) As described above, according to the present invention, since the dielectric tray carrying the object to be processed is placed on the electrostatic chuck electrode of the water-cooled electrode, the object to be processed is placed on the water-cooled electrode together with the tray. It is possible to adsorb multiple workpieces on a tray, it is possible to simultaneously process multiple workpieces with one water-cooled electrode, and there is no inconvenience of complicating the structure inside the vacuum chamber. It has the advantage that it can be conveniently applied to the treatment of easily broken GaAs substrates.
第１図は本発明の実施例の裁断側面図、第２図は第１図
の■−■線断面図、第３図はトレイの変形例の断面図、
第４図は第３図の底面図、第５図はトレイの他の変形例
の断面図、第６図は第５図の■−■線に沿った裁断平面
図、第７図は静電チャック電極の変形例の断面図、第８
図は第７図の■−■線截断平面図、第９図はトレイの更
に他の変形例の断面図、第１０図は第９図のＸ−Ｘ線に
沿った截断底面図である。
（１）・・・水冷電極
（２）・・・真空室
（３）・・・静電チャック電極
（５）・・・トレイ
（６）・・・被処理物
（Ｉｔ） ａｇ・・・セラミック絶縁基板（１２ａ ）
（１２ｂ ）−導電パターン■・・・導電パターンFIG. 1 is a cut side view of an embodiment of the present invention, FIG. 2 is a sectional view taken along the line ■-■ in FIG. 1, and FIG. 3 is a sectional view of a modified example of the tray.
Fig. 4 is a bottom view of Fig. 3, Fig. 5 is a sectional view of another modification of the tray, Fig. 6 is a cutaway plan view taken along the line ■-■ in Fig. 5, and Fig. 7 is an electrostatic Cross-sectional view of a modified example of the chuck electrode, No. 8
9 is a sectional view of still another modification of the tray, and FIG. 10 is a bottom view taken along line XX in FIG. 9. (1)...Water-cooled electrode (2)...Vacuum chamber (3)...Electrostatic chuck electrode (5)...Tray (6)...Workpiece (It) ag...Ceramic Insulating substrate (12a)
(12b) - Conductive pattern ■... Conductive pattern
Claims (2)
電極を設けて該真空室内を搬送される被処理物を静電吸
着するようにしたものに於いて、該被処理物を、該静電
チャック電極に静電吸着される誘電体からなるトレイに
載置したことを特徴とする基板保持装置。1. In an apparatus in which an electrostatic chuck electrode is provided in front of a water-cooled electrode provided in a vacuum chamber to electrostatically attract a workpiece being transported within the vacuum chamber, the workpiece is A substrate holding device characterized in that the substrate holding device is placed on a tray made of a dielectric material that is electrostatically attracted to a chuck electrode.
電極を設けて該真空室内を搬送される被処理物を静電吸
着するようにしたものに於いて、該静電チャック電極を
、２枚のセラミック絶縁基板の間に導電パターンを介在
させて一体に焼結したもので構成し、真空室内を搬送さ
れる被処理物をセラミック絶縁基板に導電パターンを形
成したトレイに載置したことを特徴とする基板保持装置
。2. In an apparatus in which an electrostatic chuck electrode is provided in front of a water-cooled electrode provided in a vacuum chamber to electrostatically attract a workpiece being transported within the vacuum chamber, two electrostatic chuck electrodes are provided. A conductive pattern is interposed between two ceramic insulating substrates and sintered together, and the workpiece being transported in the vacuum chamber is placed on a tray with a conductive pattern formed on the ceramic insulating substrate. A substrate holding device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1136867A JP2767282B2 (en) | 1989-05-30 | 1989-05-30 | Substrate holding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1136867A JP2767282B2 (en) | 1989-05-30 | 1989-05-30 | Substrate holding device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH033250A true JPH033250A (en) | 1991-01-09 |
| JP2767282B2 JP2767282B2 (en) | 1998-06-18 |
Family
ID=15185379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1136867A Expired - Fee Related JP2767282B2 (en) | 1989-05-30 | 1989-05-30 | Substrate holding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2767282B2 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5521790A (en) * | 1994-05-12 | 1996-05-28 | International Business Machines Corporation | Electrostatic chuck having relatively thick and thin areas and means for uniformly cooling said thick and thin areas during chuck anodization |
| JP2005101505A (en) * | 2003-03-13 | 2005-04-14 | Ventec-Ges Fuer Venturekapital & Unternehmensberatung Mbh | Mobile and transportable type electrostatic substrate holder |
| JP2007214577A (en) * | 2006-02-10 | 2007-08-23 | Veeco Instruments Inc | System and method for changing surface temperature of wafer by temperature compensation of wafer carrier |
| US7736462B2 (en) * | 2003-01-13 | 2010-06-15 | Oc Oerlikon Balzers Ag | Installation for processing a substrate |
| JP2010232250A (en) * | 2009-03-26 | 2010-10-14 | Panasonic Corp | Plasma treating apparatus |
| JP2011003933A (en) * | 2010-09-22 | 2011-01-06 | Ulvac Japan Ltd | Vacuum processing apparatus |
| JP2012191217A (en) * | 2012-04-26 | 2012-10-04 | Panasonic Corp | Plasma processing apparatus and plasma processing method |
| JP2016009715A (en) * | 2014-06-23 | 2016-01-18 | 新光電気工業株式会社 | Tray for electrostatic attraction and substrate fixing device |
| JP2018078174A (en) * | 2016-11-08 | 2018-05-17 | 株式会社アルバック | Tray with electrostatic chuck |
| CN111455355A (en) * | 2020-04-13 | 2020-07-28 | 艾华(无锡)半导体科技有限公司 | Electrostatic assisted epitaxial growth method |
| US11248295B2 (en) | 2014-01-27 | 2022-02-15 | Veeco Instruments Inc. | Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10339323A (en) * | 1997-06-06 | 1998-12-22 | Asmo Co Ltd | Slide bearing and motor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57148356A (en) * | 1981-03-09 | 1982-09-13 | Hitachi Ltd | Sample holding device |
| JPS58116232U (en) * | 1982-02-03 | 1983-08-08 | 株式会社明石製作所 | Electrostatic chuck type heating table device |
| JPS6294953A (en) * | 1985-10-21 | 1987-05-01 | Toto Ltd | Manufacture of electrostatic chucking substrate |
| JPS62264638A (en) * | 1987-04-21 | 1987-11-17 | Toto Ltd | Manufacture of electrostatic chucking substrate |
| JPS6396912A (en) * | 1986-10-14 | 1988-04-27 | Toshiba Ceramics Co Ltd | Substrate holder |
| JPS63140085A (en) * | 1986-11-29 | 1988-06-11 | Kyocera Corp | Film forming device |
-
1989
- 1989-05-30 JP JP1136867A patent/JP2767282B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57148356A (en) * | 1981-03-09 | 1982-09-13 | Hitachi Ltd | Sample holding device |
| JPS58116232U (en) * | 1982-02-03 | 1983-08-08 | 株式会社明石製作所 | Electrostatic chuck type heating table device |
| JPS6294953A (en) * | 1985-10-21 | 1987-05-01 | Toto Ltd | Manufacture of electrostatic chucking substrate |
| JPS6396912A (en) * | 1986-10-14 | 1988-04-27 | Toshiba Ceramics Co Ltd | Substrate holder |
| JPS63140085A (en) * | 1986-11-29 | 1988-06-11 | Kyocera Corp | Film forming device |
| JPS62264638A (en) * | 1987-04-21 | 1987-11-17 | Toto Ltd | Manufacture of electrostatic chucking substrate |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5521790A (en) * | 1994-05-12 | 1996-05-28 | International Business Machines Corporation | Electrostatic chuck having relatively thick and thin areas and means for uniformly cooling said thick and thin areas during chuck anodization |
| US7736462B2 (en) * | 2003-01-13 | 2010-06-15 | Oc Oerlikon Balzers Ag | Installation for processing a substrate |
| JP2005101505A (en) * | 2003-03-13 | 2005-04-14 | Ventec-Ges Fuer Venturekapital & Unternehmensberatung Mbh | Mobile and transportable type electrostatic substrate holder |
| US8603248B2 (en) | 2006-02-10 | 2013-12-10 | Veeco Instruments Inc. | System and method for varying wafer surface temperature via wafer-carrier temperature offset |
| JP2007214577A (en) * | 2006-02-10 | 2007-08-23 | Veeco Instruments Inc | System and method for changing surface temperature of wafer by temperature compensation of wafer carrier |
| JP2010232250A (en) * | 2009-03-26 | 2010-10-14 | Panasonic Corp | Plasma treating apparatus |
| JP2011003933A (en) * | 2010-09-22 | 2011-01-06 | Ulvac Japan Ltd | Vacuum processing apparatus |
| JP2012191217A (en) * | 2012-04-26 | 2012-10-04 | Panasonic Corp | Plasma processing apparatus and plasma processing method |
| US11248295B2 (en) | 2014-01-27 | 2022-02-15 | Veeco Instruments Inc. | Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems |
| JP2016009715A (en) * | 2014-06-23 | 2016-01-18 | 新光電気工業株式会社 | Tray for electrostatic attraction and substrate fixing device |
| US9837297B2 (en) | 2014-06-23 | 2017-12-05 | Shinko Electric Industries Co., Ltd. | Tray and wafer holding apparatus |
| TWI640054B (en) * | 2014-06-23 | 2018-11-01 | 日商新光電氣工業股份有限公司 | Tray and wafer holding apparatus |
| JP2018078174A (en) * | 2016-11-08 | 2018-05-17 | 株式会社アルバック | Tray with electrostatic chuck |
| CN111455355A (en) * | 2020-04-13 | 2020-07-28 | 艾华(无锡)半导体科技有限公司 | Electrostatic assisted epitaxial growth method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2767282B2 (en) | 1998-06-18 |
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