JPH0657432A - Formation of tantalum oxide thin film - Google Patents
Formation of tantalum oxide thin filmInfo
- Publication number
- JPH0657432A JPH0657432A JP21247192A JP21247192A JPH0657432A JP H0657432 A JPH0657432 A JP H0657432A JP 21247192 A JP21247192 A JP 21247192A JP 21247192 A JP21247192 A JP 21247192A JP H0657432 A JPH0657432 A JP H0657432A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- tantalum oxide
- oxide thin
- vacuum chamber
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はＤＲＡＭ（ダイナミック
ラム）等の容量性絶縁膜などとして有用な酸化タンタル
薄膜の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a tantalum oxide thin film useful as a capacitive insulating film such as DRAM (dynamic ram).
【０００２】[0002]
【従来の技術】近年、原料ガスを真空室内で加熱分解反
応させて基板上に薄膜を形成するＣＶＤ法（化学気相成
長法）は半導体や誘電体等の薄膜形成の有用な手段とし
て注目されており、容量性絶縁膜などとして有用な酸化
タンタル薄膜の形成方法においてもＣＶＤ装置をもちい
て化学気相成長法により薄膜を製造することが試みられ
ている。この場合には通常加熱し得る真空室を有するい
わゆる熱ＣＶＤ装置が用いられている。2. Description of the Related Art In recent years, a CVD method (chemical vapor deposition method) in which a raw material gas is heated and decomposed in a vacuum chamber to form a thin film on a substrate has attracted attention as a useful means for forming a thin film of a semiconductor or a dielectric. Therefore, in the method of forming a tantalum oxide thin film useful as a capacitive insulating film, it has been attempted to manufacture a thin film by a chemical vapor deposition method using a CVD device. In this case, a so-called thermal CVD apparatus having a vacuum chamber that can normally be heated is used.
【０００３】以下、図面を参照しながら従来の酸化タン
タル薄膜の製造方法について説明する。図２は従来のＣ
ＶＤ法による酸化タンタル薄膜形成法に用いられている
酸化タンタル薄膜製造装置（ＣＶＤ装置）の構成を示す
概略図である。A conventional method for manufacturing a tantalum oxide thin film will be described below with reference to the drawings. Figure 2 shows the conventional C
It is a schematic diagram showing the composition of the tantalum oxide thin film manufacturing device (CVD device) used for the tantalum oxide thin film formation method by the VD method.
【０００４】従来ＣＶＤ装置による酸化タンタル薄膜の
製造は、原料として液体のＴａ（ＯＣ2Ｈ5）5等で代表
される液体有機タンタル化合物と酸素ガス等を用いて形
成されてきた。Conventionally, a tantalum oxide thin film has been produced by a CVD apparatus using a liquid organic tantalum compound typified by liquid Ta (OC 2 H 5 ) 5 and oxygen gas as raw materials.
【０００５】図２において、真空室３１は真空排気装置
３２によっておよそ０．５〜１０Ｔｏｒｒ程度の真空に
排気される。３３は真空室内に設置された基板であり、
通常ポリシリコンからなる基板が用いられる。また、真
空室３１はヒータ３４によって約４５０℃に加熱されて
いる。アンプル３６内のＴａ（ＯＣ2Ｈ5）5は流量制御
装置３８によって流量制御された不活性ガス３９によっ
てバブリングされヒータ４０によって約１５０℃に加熱
されたガス導入管４１を通って真空室３１に導入され
る。流量制御装置４２によって流量制御された酸素ガス
４３も加熱されたガス導入管４１を通って真空室３１に
導入される。真空室内に導入されたこれらの原料ガスは
熱分解反応して、約４５０℃に加熱されている基板３３
上に酸化タンタル薄膜が堆積される。堆積された、酸化
タンタル薄膜は、通常Ｏ2またはＯ3中で４５０から８０
０℃の温度で熱処理される。In FIG. 2, the vacuum chamber 31 is evacuated to a vacuum of about 0.5 to 10 Torr by a vacuum evacuation device 32. 33 is a substrate installed in the vacuum chamber,
A substrate made of polysilicon is usually used. The vacuum chamber 31 is heated to about 450 ° C. by the heater 34. Ta (OC 2 H 5 ) 5 in the ampoule 36 is bubbled into the vacuum chamber 31 by an inert gas 39 whose flow rate is controlled by a flow rate control device 38 and heated by a heater 40 to about 150 ° C. be introduced. The oxygen gas 43 whose flow rate is controlled by the flow rate control device 42 is also introduced into the vacuum chamber 31 through the heated gas introduction pipe 41. These raw material gases introduced into the vacuum chamber undergo a thermal decomposition reaction to heat the substrate 33 heated to about 450 ° C.
A tantalum oxide thin film is deposited on top. The deposited tantalum oxide thin film is typically 450 to 80 in O 2 or O 3.
It is heat treated at a temperature of 0 ° C.
【０００６】[0006]
【発明が解決しようとする課題】しかしながらこのよう
な方法で形成された酸化タンタル薄膜は未処理の状態で
はリーク電流が大きいためオゾン中での熱処理、紫外線
の照射等の複雑な工程が必要になる。However, since the tantalum oxide thin film formed by such a method has a large leak current in an untreated state, it requires complicated steps such as heat treatment in ozone and irradiation with ultraviolet rays. .
【０００７】本発明は未処理の状態でリーク電流の小さ
い酸化タンタル薄膜を形成することを目的とする。An object of the present invention is to form a tantalum oxide thin film having a small leak current in an untreated state.
【０００８】[0008]
【課題を解決するための手段】前記目的を達成するた
め、本発明の酸化タンタル薄膜の形成方法においては、
真空室内にＴａ（ＯＣ2Ｈ5）5、ＴｉＣｌ4、Ｏ2、Ａｒ
を導入しＴｉを混入した酸化タンタル薄膜を堆積する。In order to achieve the above object, in the method for forming a tantalum oxide thin film of the present invention,
Ta (OC 2 H 5 ) 5 , TiCl 4 , O 2 , Ar in the vacuum chamber
Is introduced to deposit a tantalum oxide thin film mixed with Ti.
【０００９】また、真空室内にＴａ（ＯＣ2Ｈ5）5、Ｓ
ｉＨ4、Ｏ2、Ａｒを導入しＳｉを混入した酸化タンタル
薄膜を堆積する。Further, Ta (OC 2 H 5 ) 5 , S is placed in the vacuum chamber.
A tantalum oxide thin film mixed with Si is deposited by introducing iH 4 , O 2 and Ar.
【００１０】[0010]
【作用】本発明による酸化タンタル薄膜は、通常酸化タ
ンタル薄膜内に形成される格子欠陥、空位等をＴｉまた
はＳｉが補償するか、ＴｉまたはＳｉが混入されている
ためにＴａ2Ｏ5格子にかかる応力が緩和されて格子欠陥
ができずらくなるために、リーク電流の小さい酸化タン
タル薄膜が形成できる。In the tantalum oxide thin film according to the present invention, Ti or Si compensates for lattice defects, vacancies, etc., which are usually formed in the tantalum oxide thin film, or since Ti or Si is mixed, the Ta 2 O 5 lattice is formed. Since such stress is relaxed and it becomes difficult to form lattice defects, a tantalum oxide thin film with a small leak current can be formed.
【００１１】[0011]
【実施例】図１は本発明の実施例で使用した酸化タンタ
ル薄膜形成装置の概略図である。１は真空室であり、真
空排気装置２によって真空に排気される。５は真空室内
に設置された基板であり本実施例ではポリシリコンを用
いた。基板５はヒータ６によって約６００℃に加熱され
ている。EXAMPLE FIG. 1 is a schematic view of a tantalum oxide thin film forming apparatus used in an example of the present invention. Reference numeral 1 denotes a vacuum chamber, which is evacuated to a vacuum by a vacuum exhaust device 2. Reference numeral 5 is a substrate installed in a vacuum chamber, and polysilicon was used in this embodiment. The substrate 5 is heated to about 600 ° C. by the heater 6.
【００１２】アンプル３内のＴａ（ＯＣ2Ｈ5）5は高温
槽７によって１２０℃に温度制御され、流量制御装置８
によって流量制御されたＡｒガス４（本実施例でのＡｒ
流量は３００ｓｃｃｍ）によってバブリングされヒータ
９によって約１５０℃に加熱されたガス導入管１０を通
って真空室１に導入される。流量制御装置１１によって
流量制御されたＯ2ガス１２（本実施例では５００ｓｃ
ｃｍ）と流量制御装置１４によって流量制御されたＴｉ
Ｃｌ4１３またはＳｉＨ4１３も真空室内に導入される。
（但しＴｉＣｌ4の場合は流量制御装置１４およびガス
導入管１５は約８０℃に加熱されている）真空室内に導
入されたこれらの原料ガスは熱分解反応して、約６００
℃に加熱されている基板５上にＴｉを含有する酸化タン
タル薄膜またはＳｉを含有する酸化タンタル薄膜が形成
される。（本実施例ではＴｉＣｌ４流量５ｓｃｃｍ、Ｓ
ｉＨ４流量３ｓｃｃｍとした）図３は原料としてＴａ
（ＯＣ2Ｈ5）5、Ａｒ、Ｏ2を導入した場合、それに加え
ＴｉＣｌ4を導入した場合またはＳｉＨ4を導入した場合
の酸化タンタル薄膜のリーク電流を示したものである。
Ｏ2のみを導入して形成した場合の酸化タンタル薄膜の
リーク電流は電界強度１ＭＶ／ｃｍで１ｘ１０-3Ａ／ｃ
ｍ2程度の電流が流れている。しかしＴｉＣｌ4またはＳ
ｉＨ4を導入して堆積した場合、未処理の状態でリーク
電流は約３ｘ１０-10Ａ／ｃｍ2と小さく、絶縁耐圧も大
きくなっていることがわかる。The temperature of Ta (OC 2 H 5 ) 5 in the ampoule 3 is controlled to 120 ° C. by the high temperature tank 7, and the flow rate controller 8
Ar gas 4 whose flow rate is controlled by (Ar in this embodiment)
The gas is introduced into the vacuum chamber 1 through the gas introduction pipe 10 which is bubbled at a flow rate of 300 sccm and heated to about 150 ° C. by the heater 9. The O 2 gas 12 whose flow rate is controlled by the flow rate control device 11 (500 sc in this embodiment)
cm) and Ti whose flow rate is controlled by the flow rate control device 14
Cl 4 13 or SiH 4 13 is also introduced into the vacuum chamber.
(However, in the case of TiCl 4 , the flow rate control device 14 and the gas introduction pipe 15 are heated to about 80 ° C.) These raw material gases introduced into the vacuum chamber undergo a thermal decomposition reaction to give about 600
A tantalum oxide thin film containing Ti or a tantalum oxide thin film containing Si is formed on the substrate 5 which has been heated to ° C. (In this embodiment, TiCl4 flow rate is 5 sccm, S
iH4 flow rate was 3 sccm).
It shows the leakage current of the tantalum oxide thin film when (OC 2 H 5 ) 5 , Ar, and O 2 were introduced, and when TiCl 4 was introduced in addition thereto or SiH 4 was introduced.
The leakage current of the tantalum oxide thin film formed by introducing only O 2 is 1 × 10 −3 A / c at an electric field strength of 1 MV / cm.
A current of about m 2 is flowing. However, TiCl 4 or S
It can be seen that, when iH 4 is introduced and deposited, the leak current is as small as about 3 × 10 −10 A / cm 2 and the dielectric strength voltage is high in the untreated state.
【００１３】真空室内の圧力としては通常０．５〜１０
Ｔｏｒｒ程度の範囲が一般的で、また不活性ガスとして
は特に限定するものではないが、通常ＡｒやＨｅが用い
られ、Ｎ2も用いられることが多い。これらの不活性ガ
スの流量については特に限定するものではないが５０〜
１０００ｓｃｃｍ程度の範囲が好適である。The pressure in the vacuum chamber is usually 0.5 to 10
A range of about Torr is generally used, and the inert gas is not particularly limited, but Ar or He is usually used, and N 2 is also often used. The flow rate of these inert gases is not particularly limited, but is 50-
A range of about 1000 sccm is suitable.
【００１４】[0014]
【発明の効果】本発明はＴｉまたはＳｉを含有する酸化
タンタル薄膜を形成することによって、従来法による酸
化タンタル薄膜内に形成されやすい格子欠陥等を補償ま
たは応力を緩和することでリーク電流の小さい酸化タン
タル薄膜を形成することができる。According to the present invention, by forming a tantalum oxide thin film containing Ti or Si, a leak current is reduced by compensating for lattice defects and the like which are likely to be formed in the tantalum oxide thin film by the conventional method or relaxing stress. A tantalum oxide thin film can be formed.
【図１】本発明の一実施例における酸化タンタル薄膜形
成装置の概略図FIG. 1 is a schematic view of a tantalum oxide thin film forming apparatus according to an embodiment of the present invention.
【図２】従来例における酸化タンタル薄膜形成装置の概
略図FIG. 2 is a schematic view of a tantalum oxide thin film forming apparatus in a conventional example.
【図３】本発明および従来例によって形成した酸化タン
タル薄膜のリーク電流特性を示す図FIG. 3 is a diagram showing leakage current characteristics of a tantalum oxide thin film formed by the present invention and a conventional example.
１ 真空室 ２ 真空排気装置 ３ アンプル ４ Ａｒガス ５ 基板 ６ ヒータ ７ 恒温槽 ８ 流量制御装置 ９ ヒータ １０ ガス導入管 １１ 流量制御装置 １２ Ｏ2ガス １３ ＴｉＣｌ4またはＳｉＨ4 １４ 流量制御装置 １５ ガス導入管 １６ 基板ホルダ ３１ 真空室 ３２ 真空排気装置 ３３ 基板 ３４ ヒータ ３６ アンプル ３７ ヒータ ３８ 流量制御装置 ３９ 不活性ガス ４０ ヒータ ４１ ガス導入管 ４２ 流量制御装置 ４３ 酸素ガス1 Vacuum Chamber 2 Vacuum Exhaust Device 3 Ampoule 4 Ar Gas 5 Substrate 6 Heater 7 Constant Temperature Bath 8 Flow Control Device 9 Heater 10 Gas Inlet Pipe 11 Flow Control Device 12 O 2 Gas 13 TiCl 4 or SiH 4 14 Flow Control Device 15 Gas Introduction Tube 16 Substrate holder 31 Vacuum chamber 32 Vacuum exhaust device 33 Substrate 34 Heater 36 Ampoule 37 Heater 38 Flow rate control device 39 Inert gas 40 Heater 41 Gas introduction pipe 42 Flow rate control device 43 Oxygen gas
───────────────────────────────────────────────────── フロントページの続き (72)発明者 平尾 孝 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takashi Hirao 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (2)
させる化学気相成長法による酸化タンタル薄膜の形成に
於て、前記真空室内に原料ガスとして少なくとも、Ｔａ
（ＯＣ2Ｈ5）5とＴｉＣｌ4を導入し、熱分解反応させ、
基板上にＴｉを含有した酸化タンタル薄膜を堆積させる
ことを特徴とする酸化タンタル薄膜の製造方法。1. In forming a tantalum oxide thin film by a chemical vapor deposition method in which a raw material gas is introduced into a vacuum chamber to cause a thermal decomposition reaction, at least Ta as a raw material gas is contained in the vacuum chamber.
Introducing (OC 2 H 5 ) 5 and TiCl 4 to cause thermal decomposition reaction,
A method for producing a tantalum oxide thin film, which comprises depositing a tantalum oxide thin film containing Ti on a substrate.
させる化学気相成長法による酸化タンタル薄膜の形成に
於て、前記真空室内に原料ガスとして少なくとも、Ｔａ
（ＯＣ2Ｈ5）5とＳｉＨ4を導入し、熱分解反応させ、基
板上にＳｉを含有した酸化タンタル薄膜を堆積させるこ
とを特徴とする酸化タンタル薄膜の製造方法。2. In forming a tantalum oxide thin film by a chemical vapor deposition method in which a raw material gas is introduced into a vacuum chamber to cause a thermal decomposition reaction, at least Ta as a raw material gas is contained in the vacuum chamber.
A method for producing a tantalum oxide thin film, which comprises introducing (OC 2 H 5 ) 5 and SiH 4 and causing a thermal decomposition reaction to deposit a tantalum oxide thin film containing Si on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21247192A JPH0657432A (en) | 1992-08-10 | 1992-08-10 | Formation of tantalum oxide thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21247192A JPH0657432A (en) | 1992-08-10 | 1992-08-10 | Formation of tantalum oxide thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0657432A true JPH0657432A (en) | 1994-03-01 |
Family
ID=16623197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21247192A Pending JPH0657432A (en) | 1992-08-10 | 1992-08-10 | Formation of tantalum oxide thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0657432A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100322784B1 (en) * | 1998-04-29 | 2002-03-13 | 마이크로코팅 테크놀로지, 인크. | Apparatus and process for controlled atmosphere chemical vapor deposition |
| EP1625944A1 (en) | 2004-08-13 | 2006-02-15 | Fuji Photo Film Co., Ltd. | Method of manufacturing lithographic printing plate support |
| EP1712368A1 (en) | 2005-04-13 | 2006-10-18 | Fuji Photo Film Co., Ltd. | Method of manufacturing a support for a lithographic printing plate |
| EP2100677A1 (en) | 2008-03-06 | 2009-09-16 | Fujifilm Corporation | Method of manufacturing aluminum alloy plate for lithographic printing plate, aluminum alloy plate for lithographic printing plate obtained thereby and lithographic printing plate support |
| WO2010038812A1 (en) | 2008-09-30 | 2010-04-08 | 富士フイルム株式会社 | Electrolytic treatment method and electrolytic treatment device |
| WO2010150810A1 (en) | 2009-06-26 | 2010-12-29 | 富士フイルム株式会社 | Light reflecting substrate and process for manufacture thereof |
| WO2011037005A1 (en) | 2009-09-24 | 2011-03-31 | 富士フイルム株式会社 | Lithographic printing original plate |
| WO2011078010A1 (en) | 2009-12-25 | 2011-06-30 | 富士フイルム株式会社 | Insulated substrate, process for production of insulated substrate, process for formation of wiring line, wiring substrate, and light-emitting element |
| EP2434592A2 (en) | 2010-09-24 | 2012-03-28 | Fujifilm Corporation | Anisotropically conductive member |
-
1992
- 1992-08-10 JP JP21247192A patent/JPH0657432A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100322784B1 (en) * | 1998-04-29 | 2002-03-13 | 마이크로코팅 테크놀로지, 인크. | Apparatus and process for controlled atmosphere chemical vapor deposition |
| EP1625944A1 (en) | 2004-08-13 | 2006-02-15 | Fuji Photo Film Co., Ltd. | Method of manufacturing lithographic printing plate support |
| EP1712368A1 (en) | 2005-04-13 | 2006-10-18 | Fuji Photo Film Co., Ltd. | Method of manufacturing a support for a lithographic printing plate |
| EP2100677A1 (en) | 2008-03-06 | 2009-09-16 | Fujifilm Corporation | Method of manufacturing aluminum alloy plate for lithographic printing plate, aluminum alloy plate for lithographic printing plate obtained thereby and lithographic printing plate support |
| WO2010038812A1 (en) | 2008-09-30 | 2010-04-08 | 富士フイルム株式会社 | Electrolytic treatment method and electrolytic treatment device |
| WO2010150810A1 (en) | 2009-06-26 | 2010-12-29 | 富士フイルム株式会社 | Light reflecting substrate and process for manufacture thereof |
| WO2011037005A1 (en) | 2009-09-24 | 2011-03-31 | 富士フイルム株式会社 | Lithographic printing original plate |
| WO2011078010A1 (en) | 2009-12-25 | 2011-06-30 | 富士フイルム株式会社 | Insulated substrate, process for production of insulated substrate, process for formation of wiring line, wiring substrate, and light-emitting element |
| EP2434592A2 (en) | 2010-09-24 | 2012-03-28 | Fujifilm Corporation | Anisotropically conductive member |
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