JPH06504878A - 珪素ウェーハ中の析出状態を制御する方法 - Google Patents
珪素ウェーハ中の析出状態を制御する方法Info
- Publication number
- JPH06504878A JPH06504878A JP4501213A JP50121392A JPH06504878A JP H06504878 A JPH06504878 A JP H06504878A JP 4501213 A JP4501213 A JP 4501213A JP 50121392 A JP50121392 A JP 50121392A JP H06504878 A JPH06504878 A JP H06504878A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- heat treatment
- silicon
- temperature
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000012431 wafers Nutrition 0.000 title claims description 66
- 238000000034 method Methods 0.000 title claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 29
- 229910052710 silicon Inorganic materials 0.000 title claims description 29
- 239000010703 silicon Substances 0.000 title claims description 29
- 238000001556 precipitation Methods 0.000 title description 7
- 238000009826 distribution Methods 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 21
- 230000007547 defect Effects 0.000 claims description 18
- 238000000137 annealing Methods 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 10
- 239000002244 precipitate Substances 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims 8
- 239000012300 argon atmosphere Substances 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 230000002035 prolonged effect Effects 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241001385733 Aesculus indica Species 0.000 description 1
- FSVQVLHGIXXZGC-UHFFFAOYSA-N [Si].[U] Chemical compound [Si].[U] FSVQVLHGIXXZGC-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Surgical Instruments (AREA)
- Safety Valves (AREA)
- Silicon Compounds (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (12)
- 1.珪素ウェーハ内部に析出物密度の制御された分布状態を達成するための珪素 ウェーハ処理方法において、次の操作、 (a)ウェーハを950℃〜1150℃、特に約1100℃の温度で約15分間 予備的熱処理にかけ、 (b)標準的化学的腐食(エッチング)処理の後、互いに熱的に密接に接触した 状態に組み合わせて対にしたウェーハを1200℃〜1275℃の温度で数十秒 間速いアニーリング熱処理にかけ、 (c)前記ウェーハを更に900℃〜1000℃の温度で長い熱処理にかけ、そ して最後に、 (d)前記ウェーハを炉から取り出し、前記速いアニーリング処理中互いに密接 に接触していた表面を表面研磨にかける、 操作からなることを特徴とする珪素ウェーハ処理方法。
- 2.予備的熱処理が約1100℃で行われ、「欠陥」密度を更に減少させる機能 を果たし、均質な出発状態を確立する請求項1に記載の珪素ウェーハの処理方法 。
- 3.速いアニーリング熱処理が、対に組合せたウェーハを10〜40秒の時間の 熱的パルスにかけ、析出物前駆物質の発生を行わせることからなる請求項1に記 載の珪素ウェーハの処理方法。
- 4.更に長い熱処理が一又は二段階で行われる請求項1に記載の珪素ウェーハの 処理方法。
- 5.更に長い熱処理が二段階で行われ、特に第一段階では900℃の温度で、第 二段階で1000℃の温度で、夫々4時間及び16時間の時間行われる請求項4 に記載の珪素ウェーハ処理方法。
- 6.ウェーハの密接な熱的接触組合せが、それらの表面の間の簡単な物理的熱的 接触で実現される請求項1に記載の珪素ウェーハ処理方法。
- 7.ウェーハの密接な熱的接触組合せが、それらの表面の間の原子的待合(ウェ ーハ結合)を実現する緊密な結合方法により実現される請求項1に記載の珪素ウ ェーハ処理方法。
- 8.珪素ウェーハ内部に析出物密度の制御された分布状態を達成するための珪素 ウェーハの処理方法において、次の操作、 (a)ウェーハを950℃〜1150℃の温度で約15分間予備的熱処理にかけ 、 (b)標準的化学的腐食処理の後、ウェーハを不活性ガス雰囲気中で、表面を遮 蔽して、1200℃〜1275℃の温度で数十秒間速いアニーリング熱処理にか け、(c)前記ウェーハを更に900℃〜1000℃の温度で長い熱処理にかけ 、そして最後に、 (d)前記ウェーハを炉から取り出し、前記速いアニーリング処理中遮蔽されて いた表面を表面研磨にかける、操作からなることを特徴とする珪素ウェーハ処理 方法。
- 9.不活性雰囲気が窒素であることを特徴とする請求項8に記載の方法。
- 10.遮蔽が別の珪素スライスを用いて実現される請求項8及び9に記載の方法 。
- 11.遮蔽が石英板を用いて実現される請求項8及び9に記載の方法。
- 12.窒素雰囲気に対するウェーハの一方の面の遮蔽が、その面上にアルゴン雰 囲気を適用することにより実現されることを特徴とする請求項8及び9に記載の 方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT48481A/90 | 1990-11-15 | ||
IT48481A IT1242014B (it) | 1990-11-15 | 1990-11-15 | Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici. |
PCT/IT1991/000095 WO1992009101A1 (en) | 1990-11-15 | 1991-11-11 | Process for achieving controlled precipitation profiles in silicon wafers |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002373700A Division JP2003243402A (ja) | 1990-11-15 | 2002-12-25 | 珪素ウェーハ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06504878A true JPH06504878A (ja) | 1994-06-02 |
JP3412636B2 JP3412636B2 (ja) | 2003-06-03 |
Family
ID=11266818
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50121392A Expired - Lifetime JP3412636B2 (ja) | 1990-11-15 | 1991-11-11 | 珪素ウェーハの処理方法 |
JP2002373700A Pending JP2003243402A (ja) | 1990-11-15 | 2002-12-25 | 珪素ウェーハ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002373700A Pending JP2003243402A (ja) | 1990-11-15 | 2002-12-25 | 珪素ウェーハ |
Country Status (17)
Country | Link |
---|---|
US (1) | US5403406A (ja) |
EP (1) | EP0557415B1 (ja) |
JP (2) | JP3412636B2 (ja) |
KR (1) | KR100247464B1 (ja) |
AT (1) | ATE176084T1 (ja) |
AU (1) | AU9033591A (ja) |
CZ (1) | CZ84993A3 (ja) |
DE (1) | DE69130802T2 (ja) |
FI (1) | FI932024A (ja) |
IL (1) | IL99979A (ja) |
IT (1) | IT1242014B (ja) |
MY (1) | MY110258A (ja) |
SG (1) | SG64901A1 (ja) |
SK (1) | SK47093A3 (ja) |
TW (1) | TW205110B (ja) |
WO (1) | WO1992009101A1 (ja) |
ZA (1) | ZA918831B (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0574782A (ja) * | 1991-09-10 | 1993-03-26 | Mitsubishi Materials Corp | シリコン基板の製造方法 |
JPH11150119A (ja) * | 1997-11-14 | 1999-06-02 | Sumitomo Sitix Corp | シリコン半導体基板の熱処理方法とその装置 |
JP2001308101A (ja) * | 2000-04-19 | 2001-11-02 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法及びシリコンウェーハ |
JP2002110683A (ja) * | 2000-09-26 | 2002-04-12 | Sumitomo Metal Ind Ltd | シリコン半導体基板の熱処理方法 |
JP2002134515A (ja) * | 2000-10-25 | 2002-05-10 | Shin Etsu Handotai Co Ltd | シリコンウェーハの製造方法およびシリコンウェーハ |
JP2009016864A (ja) * | 1999-11-13 | 2009-01-22 | Samsung Electronics Co Ltd | シリコンウェーハの製造方法 |
JP2009147357A (ja) * | 1998-09-02 | 2009-07-02 | Memc Electron Materials Inc | 欠陥密度が低い単結晶シリコンから得られるシリコン・オン・インシュレーター構造体 |
JP2009177194A (ja) * | 2009-03-19 | 2009-08-06 | Sumco Corp | シリコンウェーハの製造方法、シリコンウェーハ |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0684925A (ja) * | 1992-07-17 | 1994-03-25 | Toshiba Corp | 半導体基板およびその処理方法 |
JP2874834B2 (ja) * | 1994-07-29 | 1999-03-24 | 三菱マテリアル株式会社 | シリコンウェーハのイントリンシックゲッタリング処理法 |
US5788763A (en) * | 1995-03-09 | 1998-08-04 | Toshiba Ceramics Co., Ltd. | Manufacturing method of a silicon wafer having a controlled BMD concentration |
US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
US6485807B1 (en) | 1997-02-13 | 2002-11-26 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects, and methods of preparing the same |
SG64470A1 (en) | 1997-02-13 | 1999-04-27 | Samsung Electronics Co Ltd | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby |
US6503594B2 (en) | 1997-02-13 | 2003-01-07 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects and slip |
US5994761A (en) | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
DE69841714D1 (de) * | 1997-04-09 | 2010-07-22 | Memc Electronic Materials | Silicium mit niedriger Fehlerdichte und idealem Sauerstoffniederschlag |
TW429478B (en) * | 1997-08-29 | 2001-04-11 | Toshiba Corp | Semiconductor device and method for manufacturing the same |
US5882989A (en) * | 1997-09-22 | 1999-03-16 | Memc Electronic Materials, Inc. | Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers |
US6340392B1 (en) | 1997-10-24 | 2002-01-22 | Samsung Electronics Co., Ltd. | Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface |
JP3746153B2 (ja) * | 1998-06-09 | 2006-02-15 | 信越半導体株式会社 | シリコンウエーハの熱処理方法 |
US6828690B1 (en) * | 1998-08-05 | 2004-12-07 | Memc Electronic Materials, Inc. | Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
US6336968B1 (en) * | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
CN1181522C (zh) | 1998-09-02 | 2004-12-22 | Memc电子材料有限公司 | 具有改进的内部收气的热退火单晶硅片及其热处理工艺 |
EP1110240B1 (en) * | 1998-09-02 | 2006-10-25 | MEMC Electronic Materials, Inc. | Process for preparing an ideal oxygen precipitating silicon wafer |
DE69908965T2 (de) * | 1998-10-14 | 2004-05-13 | Memc Electronic Materials, Inc. | Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte |
JP2000154070A (ja) * | 1998-11-16 | 2000-06-06 | Suminoe Textile Co Ltd | セラミックス三次元構造体及びその製造方法 |
US6284384B1 (en) | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
DE19924649B4 (de) * | 1999-05-28 | 2004-08-05 | Siltronic Ag | Halbleiterscheiben mit Kristallgitter-Defekten und Verfahren zur Herstellung derselben |
US20030051656A1 (en) | 1999-06-14 | 2003-03-20 | Charles Chiun-Chieh Yang | Method for the preparation of an epitaxial silicon wafer with intrinsic gettering |
US6635587B1 (en) | 1999-09-23 | 2003-10-21 | Memc Electronic Materials, Inc. | Method for producing czochralski silicon free of agglomerated self-interstitial defects |
DE10024710A1 (de) | 2000-05-18 | 2001-12-20 | Steag Rtp Systems Gmbh | Einstellung von Defektprofilen in Kristallen oder kristallähnlichen Strukturen |
US6599815B1 (en) | 2000-06-30 | 2003-07-29 | Memc Electronic Materials, Inc. | Method and apparatus for forming a silicon wafer with a denuded zone |
US6339016B1 (en) | 2000-06-30 | 2002-01-15 | Memc Electronic Materials, Inc. | Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
CN1441961A (zh) * | 2000-06-30 | 2003-09-10 | Memc电子材料有限公司 | 形成具有洁净区的硅片的方法和装置 |
JP2004537161A (ja) * | 2001-04-11 | 2004-12-09 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 高抵抗率czシリコンにおけるサーマルドナー生成の制御 |
US20020179006A1 (en) * | 2001-04-20 | 2002-12-05 | Memc Electronic Materials, Inc. | Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates |
US7749910B2 (en) * | 2001-07-04 | 2010-07-06 | S.O.I.Tec Silicon On Insulator Technologies | Method of reducing the surface roughness of a semiconductor wafer |
US7883628B2 (en) * | 2001-07-04 | 2011-02-08 | S.O.I.Tec Silicon On Insulator Technologies | Method of reducing the surface roughness of a semiconductor wafer |
FR2827078B1 (fr) * | 2001-07-04 | 2005-02-04 | Soitec Silicon On Insulator | Procede de diminution de rugosite de surface |
JP4567251B2 (ja) * | 2001-09-14 | 2010-10-20 | シルトロニック・ジャパン株式会社 | シリコン半導体基板およびその製造方法 |
US6955718B2 (en) * | 2003-07-08 | 2005-10-18 | Memc Electronic Materials, Inc. | Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
JP2005051040A (ja) * | 2003-07-29 | 2005-02-24 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体基板 |
KR100531552B1 (ko) * | 2003-09-05 | 2005-11-28 | 주식회사 하이닉스반도체 | 실리콘 웨이퍼 및 그 제조방법 |
US7485928B2 (en) * | 2005-11-09 | 2009-02-03 | Memc Electronic Materials, Inc. | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
US20090004426A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates |
US20090004458A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Diffusion Control in Heavily Doped Substrates |
US10453703B2 (en) * | 2016-12-28 | 2019-10-22 | Sunedison Semiconductor Limited (Uen201334164H) | Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5680139A (en) * | 1979-12-05 | 1981-07-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS56158431A (en) * | 1980-05-13 | 1981-12-07 | Meidensha Electric Mfg Co Ltd | Forming of oxidized film of semiconductor element for electric power |
JPS5787119A (en) * | 1980-11-19 | 1982-05-31 | Toshiba Corp | Manufacture of semiconductor device |
US4430995A (en) * | 1981-05-29 | 1984-02-14 | Hilton Joseph R | Power assisted air-purifying respirators |
JPS57197827A (en) * | 1981-05-29 | 1982-12-04 | Hitachi Ltd | Semiconductor substrate |
US4548654A (en) * | 1983-06-03 | 1985-10-22 | Motorola, Inc. | Surface denuding of silicon wafer |
JPS60133734A (ja) * | 1983-12-21 | 1985-07-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH0697664B2 (ja) * | 1984-05-11 | 1994-11-30 | 住友電気工業株式会社 | 化合物半導体のアニ−ル法 |
US4622082A (en) * | 1984-06-25 | 1986-11-11 | Monsanto Company | Conditioned semiconductor substrates |
US4851358A (en) * | 1988-02-11 | 1989-07-25 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
US4868133A (en) * | 1988-02-11 | 1989-09-19 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using RTA |
US5228927A (en) * | 1988-03-25 | 1993-07-20 | Shin-Etsu Handotai Company Limited | Method for heat-treating gallium arsenide monocrystals |
US5096839A (en) * | 1989-09-20 | 1992-03-17 | Kabushiki Kaisha Toshiba | Silicon wafer with defined interstitial oxygen concentration |
-
1990
- 1990-11-15 IT IT48481A patent/IT1242014B/it active IP Right Grant
-
1991
- 1991-11-07 IL IL9997991A patent/IL99979A/en not_active IP Right Cessation
- 1991-11-07 ZA ZA918831A patent/ZA918831B/xx unknown
- 1991-11-08 MY MYPI91002071A patent/MY110258A/en unknown
- 1991-11-11 AU AU90335/91A patent/AU9033591A/en not_active Abandoned
- 1991-11-11 EP EP92900331A patent/EP0557415B1/en not_active Expired - Lifetime
- 1991-11-11 WO PCT/IT1991/000095 patent/WO1992009101A1/en active IP Right Grant
- 1991-11-11 US US08/064,013 patent/US5403406A/en not_active Expired - Lifetime
- 1991-11-11 SG SG1996006807A patent/SG64901A1/en unknown
- 1991-11-11 JP JP50121392A patent/JP3412636B2/ja not_active Expired - Lifetime
- 1991-11-11 KR KR1019930701407A patent/KR100247464B1/ko not_active IP Right Cessation
- 1991-11-11 SK SK47093A patent/SK47093A3/sk unknown
- 1991-11-11 DE DE69130802T patent/DE69130802T2/de not_active Expired - Lifetime
- 1991-11-11 CZ CZ93849A patent/CZ84993A3/cs unknown
- 1991-11-11 AT AT92900331T patent/ATE176084T1/de not_active IP Right Cessation
- 1991-11-19 TW TW080109066A patent/TW205110B/zh not_active IP Right Cessation
-
1993
- 1993-05-05 FI FI932024A patent/FI932024A/fi unknown
-
2002
- 2002-12-25 JP JP2002373700A patent/JP2003243402A/ja active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0574782A (ja) * | 1991-09-10 | 1993-03-26 | Mitsubishi Materials Corp | シリコン基板の製造方法 |
JPH11150119A (ja) * | 1997-11-14 | 1999-06-02 | Sumitomo Sitix Corp | シリコン半導体基板の熱処理方法とその装置 |
JP2009147357A (ja) * | 1998-09-02 | 2009-07-02 | Memc Electron Materials Inc | 欠陥密度が低い単結晶シリコンから得られるシリコン・オン・インシュレーター構造体 |
JP2009016864A (ja) * | 1999-11-13 | 2009-01-22 | Samsung Electronics Co Ltd | シリコンウェーハの製造方法 |
JP2009021623A (ja) * | 1999-11-13 | 2009-01-29 | Samsung Electronics Co Ltd | シリコンウェーハの製造方法 |
JP2001308101A (ja) * | 2000-04-19 | 2001-11-02 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法及びシリコンウェーハ |
JP2002110683A (ja) * | 2000-09-26 | 2002-04-12 | Sumitomo Metal Ind Ltd | シリコン半導体基板の熱処理方法 |
JP2002134515A (ja) * | 2000-10-25 | 2002-05-10 | Shin Etsu Handotai Co Ltd | シリコンウェーハの製造方法およびシリコンウェーハ |
US7078357B2 (en) | 2000-10-25 | 2006-07-18 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing silicon wafer and silicon wafer |
JP2009177194A (ja) * | 2009-03-19 | 2009-08-06 | Sumco Corp | シリコンウェーハの製造方法、シリコンウェーハ |
Also Published As
Publication number | Publication date |
---|---|
FI932024A (fi) | 1993-06-29 |
IL99979A (en) | 1995-07-31 |
DE69130802D1 (de) | 1999-03-04 |
US5403406A (en) | 1995-04-04 |
JP3412636B2 (ja) | 2003-06-03 |
IT9048481A0 (it) | 1990-11-15 |
WO1992009101A1 (en) | 1992-05-29 |
SG64901A1 (en) | 1999-05-25 |
DE69130802T2 (de) | 1999-08-19 |
ATE176084T1 (de) | 1999-02-15 |
EP0557415A1 (en) | 1993-09-01 |
CZ84993A3 (en) | 1993-11-17 |
KR100247464B1 (ko) | 2000-03-15 |
TW205110B (ja) | 1993-05-01 |
IT1242014B (it) | 1994-02-02 |
IT9048481A1 (it) | 1992-05-15 |
SK47093A3 (en) | 1993-08-11 |
MY110258A (en) | 1998-03-31 |
FI932024A0 (fi) | 1993-05-05 |
IL99979A0 (en) | 1992-08-18 |
AU9033591A (en) | 1992-06-11 |
EP0557415B1 (en) | 1999-01-20 |
JP2003243402A (ja) | 2003-08-29 |
ZA918831B (en) | 1992-08-26 |
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