JPH063768B2 - Perpendicular magnetic film - Google Patents
Perpendicular magnetic filmInfo
- Publication number
- JPH063768B2 JPH063768B2 JP59229570A JP22957084A JPH063768B2 JP H063768 B2 JPH063768 B2 JP H063768B2 JP 59229570 A JP59229570 A JP 59229570A JP 22957084 A JP22957084 A JP 22957084A JP H063768 B2 JPH063768 B2 JP H063768B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- rare earth
- transition metal
- earth metal
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】 技術分野 本発明は、膜面と垂直な方向に磁化容易軸を有する垂直
磁化膜に関する。TECHNICAL FIELD The present invention relates to a perpendicular magnetization film having an easy axis of magnetization in a direction perpendicular to a film surface.
従来の技術 近年、垂直磁化膜に反転磁区を記録し、この記録情報を
磁気光学効果などを利用して読み出すようにした記録媒
体が注目されている。このような記録媒体としては特公
昭57−20691号公報に、Ｔｂ−Ｆｅ系合金全膜を備えた
磁性薄膜記録媒体が報告されている。Ｔｂ−Ｆｅ合金膜
は垂直異方性を示し、保磁力が大きくメモリ材料として
は適しているが、磁気光学効果が不十分であり、また、
垂直異方性や保磁力などの磁気特性についてもより一層
の改善がまたれていた。2. Description of the Related Art In recent years, a recording medium in which a reversed magnetic domain is recorded on a perpendicular magnetization film and the recorded information is read out by utilizing a magneto-optical effect or the like has been attracting attention. As such a recording medium, Japanese Patent Publication No. 57-20691 discloses a magnetic thin film recording medium provided with a Tb-Fe alloy whole film. The Tb-Fe alloy film exhibits vertical anisotropy and has a large coercive force and is suitable as a memory material, but the magneto-optical effect is insufficient, and
The magnetic properties such as vertical anisotropy and coercive force were further improved.
発明の目的 本発明は、優れた磁気特性および磁気光学特性を有する
垂直磁化膜を提供することを目的とする。Object of the Invention It is an object of the present invention to provide a perpendicular magnetization film having excellent magnetic properties and magneto-optical properties.
発明の構成 本発明の垂直磁化膜は、Gd,Tb及びDyから選ばれる少な
くとも１種の希土類金属からなる厚さ2.0〜50Åの超薄
膜と、Ｆｅ，Ｃｏ，Ｎｉ，ＣｒおよびＣｕから選ばれる
少なくとも１種の遷移金属からなる厚さ2.5〜50Åの超
薄膜とが、交互に少なくとも全体で２層以上積層されて
いることを特徴とする。Structure of the Invention The perpendicular magnetic film of the present invention has an ultrathin film having a thickness of 2.0 to 50 Å composed of at least one rare earth metal selected from Gd, Tb and Dy, and at least selected from Fe, Co, Ni, Cr and Cu. The present invention is characterized in that at least two layers of at least the whole are alternately laminated with an ultrathin film having a thickness of 2.5 to 50Å made of one kind of transition metal.
以下、添付図面に沿って本発明をさらに詳細に説明す
る。Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
第１図は本発明の垂直磁化膜を光磁気記録媒体ないしは
垂直磁気記録媒体として応用した場合の構成例を模式的
に示す断面図であり、基板11の上に遷移金属膜13および
希土類金属膜15が順次に積層されている。このように、
本発案において交互に積層するとは、遷移金属膜と希土
類金属膜とがそれぞれ１層づつで、全体で２層から構成
される場合をも包含する。FIG. 1 is a cross-sectional view schematically showing a structural example in which the perpendicularly magnetized film of the present invention is applied as a magneto-optical recording medium or a perpendicular magnetic recording medium. A transition metal film 13 and a rare earth metal film are formed on a substrate 11. 15 are stacked in sequence. in this way,
In the present invention, alternately stacking includes a case where each of the transition metal film and the rare earth metal film has one layer, and is composed of two layers in total.
希土類金属膜15はＧｄ（ガドリウム）、Ｔｂ（テルビウ
ム）またはＤｙ（ジスプロシウム）から形成され、これ
らは単独であるいは併用して用いられる。希土類金属膜
15の厚さは2.0〜50Åであり、好ましくは2.0〜20Åであ
る。この膜厚が２Åに満たないと磁気特性および磁気光
学特性が変化せずほぼ一定の値を示し、また、50Åを越
えると磁気特性および磁気光学特性が垂直磁気異方性を
示さなくなる。The rare earth metal film 15 is formed of Gd (gadolinium), Tb (terbium) or Dy (dysprosium), and these are used alone or in combination. Rare earth metal film
The thickness of 15 is 2.0 to 50Å, preferably 2.0 to 20Å. If this film thickness is less than 2Å, the magnetic properties and magneto-optical properties do not change and show almost constant values, and if it exceeds 50Å, the magnetic properties and magneto-optical properties do not exhibit perpendicular magnetic anisotropy.
遷移金属膜13はＦｅ（鉄）、Ｃｏ（コバルト）、Ｎｉ
（ニッケル）、Ｃｒ（クロム）またはＣｕ（銅）から形
成され、これらは単独でまたは併用して用いられる。遷
移金属膜13の厚さは2.5〜50Åであり、好ましくは2.5〜
20Åである。この膜厚が2.5Åに満たないと磁気特性お
よび磁気光学特性が変化せずほぼ一定の値を示し、ま
た、50Åを越えると磁気特性および磁気光学特性が垂直
磁気異方性を示さなくなる。The transition metal film 13 is made of Fe (iron), Co (cobalt), Ni.
It is formed of (nickel), Cr (chrome) or Cu (copper), and these are used alone or in combination. The thickness of the transition metal film 13 is 2.5 to 50Å, preferably 2.5 to
It is 20Å. When the film thickness is less than 2.5Å, the magnetic properties and magneto-optical properties do not change and show almost constant values, and when it exceeds 50Å, the magnetic properties and magneto-optical properties do not exhibit perpendicular magnetic anisotropy.
基板11としては、たとえば、ガラス、プラスチックセラ
ミックなどが用いられる。As the substrate 11, for example, glass, plastic ceramic or the like is used.
第２図は、他の構成例を示し、基板11上に互いに複数の
層の遷移金属膜13と希土類金属膜15とがそれぞれ交互に
積層されている。各膜については既に説明した通りであ
る。遷移金属膜および希土類金属膜は各１〜5000層（全
体として２〜10000）積層するのが適当であり、好まし
くは各10〜1000層である。また、希土類金属膜15と遷移
金属膜13の各層の厚さの比は1/5〜2/1の間で任意に設定
できる。この範囲からはずれると、膜が垂直磁気異方性
を示さなくなる。また、垂直磁化膜17と基板11との間、
あるいは垂直磁化膜17の上面には、保護膜、断熱膜、反
射膜、高透磁率物質膜を設けることもできる。FIG. 2 shows another configuration example, in which a plurality of layers of the transition metal film 13 and the rare earth metal film 15 are alternately laminated on the substrate 11. Each film is as described above. It is suitable that the transition metal film and the rare earth metal film are each laminated in an amount of 1 to 5000 layers (2 to 10,000 in total), and preferably 10 to 1000 layers each. Further, the thickness ratio of each layer of the rare earth metal film 15 and the transition metal film 13 can be arbitrarily set in the range of 1/5 to 2/1. If it deviates from this range, the film will not exhibit perpendicular magnetic anisotropy. Further, between the perpendicular magnetization film 17 and the substrate 11,
Alternatively, a protective film, a heat insulating film, a reflective film, and a high magnetic permeability material film can be provided on the upper surface of the perpendicular magnetization film 17.
本発明の垂直磁化膜を作成するには、基板上にスパッタ
リング蒸着、イオンプレーティングなどの薄膜作成法に
より、遷移金属膜と希土類金属膜とを交互に設ければよ
い。To form the perpendicularly magnetized film of the present invention, the transition metal film and the rare earth metal film may be alternately provided on the substrate by a thin film forming method such as sputtering deposition or ion plating.
効果 本発明によれば、遷移金属膜と希土類金属膜との交互積
層膜から垂直磁化膜を形成することにより、飽和磁化Ｍ
ｓ、保磁力Ｈｃおよび垂直異方性エネルギーＫ⊥などの
磁気性能が向上し、再生性能の良好な垂直磁化膜が得ら
れ、さらにカー回転角θkも大きくなるので、磁気光学
効果を利用して高感度に情報の記録読出しを行うことが
できる。このように、本発明の垂直磁化膜は、光磁気記
録媒体および垂直磁気記録媒体として有用であり、たと
えば、ハードディスク、フロッピーディスク、ドキュメ
ントフィルムなどに応用される。Effect According to the present invention, the saturation magnetization M is formed by forming the perpendicular magnetization film from the alternate laminated film of the transition metal film and the rare earth metal film.
s, coercive force Hc, and perpendicular anisotropy energy K⊥ are improved in magnetic performance, a perpendicular magnetization film with good reproduction performance is obtained, and the Kerr rotation angle θ k is also increased. Therefore, information can be recorded and read out with high sensitivity. As described above, the perpendicular magnetic film of the present invention is useful as a magneto-optical recording medium and a perpendicular magnetic recording medium, and is applied to, for example, hard disks, floppy disks, document films and the like.
実施例１ 第３図に示したようなマグネトロンスパッタ装置を用い
た。この装置では、２つのＲＦスパッタ電極21，23が配
設され、それぞれの電極上に遷移金属ターゲット25およ
び希土類金属ターゲット27が載置されている。ターゲッ
ト上にマスク29を配設することにより、それぞれ遷移金
属スパッタリング帯域および希土類金属スパッタリング
帯域を形成している。基板ホルダー31には基板33が固定
され、この基板ホルダーを回転しながら、スパッタリン
グすることにより、基板33は前記両スパッタリング帯域
を交互に通過することになり、遷移金属膜と希土類金属
膜の交互積層膜が形成される。22，24はＲＦ電源であ
り、26はガス導入バルブである。それぞれのＲＦ電極2
1，23にかかる放電電力および基板の回転速度を制御す
ることにより、遷移金属膜および希土類金属膜の膜厚な
らびに両者の膜厚比を制御できる。Example 1 A magnetron sputtering apparatus as shown in FIG. 3 was used. In this apparatus, two RF sputter electrodes 21 and 23 are arranged, and a transition metal target 25 and a rare earth metal target 27 are placed on the respective electrodes. By disposing the mask 29 on the target, a transition metal sputtering zone and a rare earth metal sputtering zone are formed, respectively. A substrate 33 is fixed to the substrate holder 31, and while rotating the substrate holder, sputtering causes the substrate 33 to alternately pass through both of the sputtering zones, thereby alternately laminating a transition metal film and a rare earth metal film. A film is formed. 22 and 24 are RF power supplies, and 26 is a gas introduction valve. Each RF electrode 2
By controlling the discharge power applied to 1, 23 and the rotation speed of the substrate, it is possible to control the film thickness of the transition metal film and the rare earth metal film and the film thickness ratio of both.
本実施例では、遷移金属としてＦｅを用い、また、希土
類金属としてＴｂを用い、以下の条件でスパッタリング
して、Ｔｂ膜の膜厚ｄ1とＦｅ膜の膜厚ｄ2の比をｄ1：
ｄ2＝１：1.7に設定し、基板ホルダーの回転速度を変化
させることにより種々の膜厚の交互積層膜を形成し、全
体で1000Åの垂直磁化膜とした。In the present embodiment, Fe is used as the transition metal, Tb is used as the rare earth metal, and sputtering is performed under the following conditions, and the ratio of the film thickness d 1 of the Tb film to the film thickness d 2 of the Fe film is d 1 :
By setting d 2 = 1: 1.7 and changing the rotation speed of the substrate holder, alternate laminated films with various film thicknesses were formed, and a 1000 Å perpendicular magnetization film was formed as a whole.
残留ガス圧：1.0×10-6Torr Ａｒガス圧：5.0×10-3Torr ターゲット材：Ｔｂ，Ｆｅ 放電電力：Ｔｂ；125Ｗ Ｆｅ；400Ｗ スパッタ時間：15min（1000Å） 基 板：スライドガラス 得られた垂直磁化膜の特性を第４図および第６図（曲線
Ｔｂ−Ｆｅ）に示す。Residual gas pressure: 1.0 × 10 -6 Torr Ar gas pressure: 5.0 × 10 -3 Torr Target material: Tb, Fe Discharge power: Tb; 125W Fe; 400W Sputtering time: 15min (1000Å) Base plate: Slide glass obtained The characteristics of the perpendicular magnetization film are shown in FIGS. 4 and 6 (curve Tb-Fe).
第４図から、ｄ1＝1.25Å、ｄ2＝2.15Åより薄くなると
積層構造ではなく合金の単層構造を示すが、それより厚
くなると、Ｍｓ,Ｈｃ,Ｋ⊥が大きくなり、磁気性能が向
上するのが判る。From Fig. 4, when d 1 = 1.25 Å and d 2 = 2.15 Å, a single layer structure of an alloy is shown instead of a laminated structure, but when it is thicker than that, Ms, Hc and K⊥ become large and the magnetic performance is You can see it improve.
また、第６図から、同様にθkが大きくなり、磁気光学
性能が大きくなるのが判る。Further, it can be seen from FIG. 6 that θ k similarly increases and the magneto-optical performance also increases.
実施例２ 遷移金属としてＦｅ−Ｃｏを用い、希土類金属としてＴ
ｂを用い、また、Ｔｂ膜の膜厚ｄ1とＦｅ−Ｃｏ膜の膜
厚ｄ2との比率をｄ1：ｄ2＝１：1.7とし、以下の条件で
実施例１と同様にスパッタリングした、 残留ガス圧：1.0×10-6Torr Ａｒガス圧：5.0×10-3Torr ターゲット材：Ｔｂ，Ｆｅ0.85Ｃｏ0.15 放電電力：Ｔｂ；125Ｗ Ｆｅ0.85Ｃｏ0.15；400Ｗ 基 板：スライドガラス 得られた磁化膜の特性を第５図および第６図（Ｔｂ−Ｆ
ｅ−Ｃｏ曲線）に示した。Example 2 Fe-Co is used as a transition metal, and T is used as a rare earth metal.
b, and the ratio of the film thickness d 1 of the Tb film to the film thickness d 2 of the Fe—Co film was set to d 1 : d 2 = 1: 1.7, and sputtering was performed in the same manner as in Example 1 under the following conditions. Residual gas pressure: 1.0 × 10 −6 Torr Ar gas pressure: 5.0 × 10 −3 Torr Target material: Tb, Fe 0.85 Co 0.15 Discharge power: Tb; 125 W Fe 0.85 Co 0.15 ; 400 W Base plate: Slide glass The characteristics of the magnetized film are shown in FIGS. 5 and 6 (Tb-F).
e-Co curve).
実施例３ 作製条件は実施例１および２と同じで、希土類金属（Ｇ
ｄ，Ｄｙ，Ｔｂ）膜の膜圧ｄ1と遷移金属（Ｆｅ，Ｃ
ｏ，Ｎｉ，Ｃｒ，Ｃｕ）膜の膜圧ｄ2との比率をｄ1：ｄ
2＝１：1.7として以下の条件でスパッタリングして作製
した。Example 3 The manufacturing conditions are the same as in Examples 1 and 2, except that the rare earth metal (G
d, Dy, Tb) film pressure d 1 and transition metal (Fe, C
o, Ni, Cr, Cu) film pressure d 2 to the ratio d 1 : d
2 = 1: 1.7, and sputtering was performed under the following conditions.
残留ガス圧：1.0×10-6Torr Ａｒガス圧：5.0×10-3Torr ターゲット材：Ｇｄ，Ｄｙ，Ｔｂ0.50Ｄｙ0.50Ｆｅ，Ｆｅ0.85Ｃｏ0.13Ｎ
ｉ0.29，Ｆｅ0.85Ｃｏ0.13Ｃｒ0.29，Ｆｅ0.85Ｃｏ0.13Ｃｕ0.02 放電電力；Ｇｄ；100Ｗ Ｄｙ，Ｔｂ0.50Ｄｙ0.50；125Ｗ Ｆｅ，Ｆｅ0.85Ｃｏ0.13Ｎｉ0.02， Ｆｅ0.85Ｃｏ0.13Ｃｒ0.02， Ｆｅ0.85Ｃｏ0.13Ｃｕ0.02：400Ｗ スパッタ時間：15min(1000Å） 基 板：スライドガラス 作成した膜は、Ｇｄ−Ｆｅ，Ｄｙ−Ｆｅ，Ｔｂ−Ｄｙ−
Ｆｅ，Ｔｂ−Ｆｅ−Ｃｏ−Ｎｉ，Ｔｂ−Ｆｅ−Ｃｏ−Ｃ
ｒ，Ｔｂ−Ｆｅ−Ｃｏ−Ｃｕである。Residual gas pressure: 1.0 × 10 -6 Torr Ar gas pressure: 5.0 × 10 -3 Torr Target material: Gd, Dy, Tb 0.50 Dy 0.50 Fe, Fe 0.85 Co 0.13 N
i 0.29 , Fe 0.85 Co 0.13 Cr 0.29 , Fe 0.85 Co 0.13 Cu 0.02 Discharge power; Gd; 100W Dy, Tb 0.50 Dy 0.50 ; 125W Fe, Fe 0.85 Co 0.13 Ni 0.02 , Fe 0.85 Co 0.13 Cr 0.02 , Fe 0.85 Co 0.13 Cu 0.02 : 400 W Sputtering time: 15 min (1000Å) Substrate: Slide glass The prepared film is Gd-Fe, Dy-Fe, Tb-Dy-
Fe, Tb-Fe-Co-Ni, Tb-Fe-Co-C
r, Tb-Fe-Co-Cu.
得られた磁性膜の特性（Ｈｃ，Ｑｋ）の結果をｄ1＝0.5
Å／ｄ2＝0.86Åの場合と本発明の範囲であるｄ1＝５Å
／ｄ2＝8.6Åの場合に分けて表１にまとめた。The result of the characteristics (Hc, Qk) of the obtained magnetic film is d 1 = 0.5
The case of Å / d 2 = 0.86Å and the range of the present invention d 1 = 5Å
The results are summarized in Table 1 in the case of / d 2 = 8.6Å.
表１の結果からｄ1＝0.5Å／ｄ2＝0.86Åの場合は各膜
とも合金の単層構造の場合の特性と同じであるが、ｄ1
＝５Å／ｄ2＝8.6Åと本願発明の範囲にした場合は各膜
ともＨｃおよびＱｋが大きくなり積層構造の効果が生じ
た。 From the results of Table 1, when d 1 = 0.5Å / d 2 = 0.86Å, each film has the same characteristics as in the case of the alloy single-layer structure, but d 1
= 5Å / d 2 = 8.6Å, and within the range of the present invention, Hc and Qk increased for each film, and the effect of the laminated structure occurred.
第１図および第２図は、本発明の垂直磁化膜を用いた光
磁気記録媒体ないし垂直磁気記録媒体の構成例を示す断
面図である。 第３図は実施例で用いたマグネトロンスパッタ装置につ
いて示す構成図である。 第４図および第５図は、膜厚ｄ1，ｄ2と、飽和磁化Ｍ
ｓ、保磁力Ｈｃおよび垂直異方性エネルギーＫ⊥との関
係を示すグラフである。 第６図は膜厚d1,d2とカー回転角θｋとの関係を示すグ
ラフである。 11…基板、13…遷移金属膜 15…希土類金属膜FIG. 1 and FIG. 2 are cross-sectional views showing a configuration example of a magneto-optical recording medium or a perpendicular magnetic recording medium using the perpendicularly magnetized film of the present invention. FIG. 3 is a block diagram showing the magnetron sputtering apparatus used in the examples. 4 and 5 show the film thicknesses d 1 and d 2 and the saturation magnetization M.
It is a graph which shows the relationship with s, coercive force Hc, and perpendicular anisotropy energy K⊥. FIG. 6 is a graph showing the relationship between the film thicknesses d 1 and d 2 and the Kerr rotation angle θ k . 11 ... Substrate, 13 ... Transition metal film 15 ... Rare earth metal film
Claims (1)
種の希土類金属からなる厚さ2.0〜50Åの超薄膜と、Ｆ
ｅ，Ｃｏ，Ｎｉ，ＣｒおよびＣｕから選ばれる少なくと
も１種の遷移金属からなる厚さ2.5〜50Åの超薄膜と
が、交互に少なくとも全体で２層以上積層されているこ
とを特徴とする垂直磁化膜。1. At least one selected from Gd, Tb and Dy
Ultra-thin film of 2.0 to 50 Å with rare earth metal
Perpendicular magnetization characterized in that at least two layers in total are alternately laminated with an ultrathin film having a thickness of 2.5 to 50 Å consisting of at least one transition metal selected from e, Co, Ni, Cr and Cu. film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59229570A JPH063768B2 (en) | 1984-10-31 | 1984-10-31 | Perpendicular magnetic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59229570A JPH063768B2 (en) | 1984-10-31 | 1984-10-31 | Perpendicular magnetic film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61108112A JPS61108112A (en) | 1986-05-26 |
| JPH063768B2 true JPH063768B2 (en) | 1994-01-12 |
Family
ID=16894244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59229570A Expired - Lifetime JPH063768B2 (en) | 1984-10-31 | 1984-10-31 | Perpendicular magnetic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH063768B2 (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62128041A (en) * | 1985-11-28 | 1987-06-10 | Sony Corp | Photomagnetic recording medium |
| JPS6226659A (en) * | 1985-07-26 | 1987-02-04 | Sony Corp | Photomagnetic recording medium |
| JPS62264463A (en) * | 1986-05-12 | 1987-11-17 | Fuji Photo Film Co Ltd | Magneto-optical recording medium |
| JPS63140076A (en) * | 1986-12-02 | 1988-06-11 | Ricoh Co Ltd | Perpendicularly magnetized film |
| JPS63211141A (en) * | 1987-02-27 | 1988-09-02 | Nippon Hoso Kyokai <Nhk> | Magneto-optical recording medium |
| JPS63269354A (en) * | 1987-04-28 | 1988-11-07 | Ricoh Co Ltd | Magneto-optical recording medium |
| EP0341521A1 (en) * | 1988-05-09 | 1989-11-15 | Siemens Aktiengesellschaft | Magneto-optical storage medium |
| JP2561130B2 (en) * | 1988-06-27 | 1996-12-04 | 富士写真フイルム株式会社 | Magneto-optical recording medium |
| JPH0254448A (en) * | 1988-08-18 | 1990-02-23 | Nec Corp | Magneto-optical disk medium |
| JPH0752528B2 (en) * | 1988-08-29 | 1995-06-05 | 富士写真フイルム株式会社 | Magneto-optical recording medium |
| JP2825837B2 (en) * | 1989-03-06 | 1998-11-18 | 三井化学株式会社 | Magnetic laminated film and method of manufacturing the same |
| JP2647958B2 (en) * | 1989-04-13 | 1997-08-27 | 日本電気株式会社 | Magneto-optical recording medium |
| JP2703372B2 (en) * | 1989-11-22 | 1998-01-26 | 三洋電機株式会社 | Magneto-optical recording medium |
| JP2957260B2 (en) * | 1990-10-26 | 1999-10-04 | 日本電気株式会社 | Magneto-optical recording medium |
| CA2060549C (en) * | 1991-02-08 | 2002-08-13 | Masumi Ohta | Magneto-optical recording medium |
| US7285338B2 (en) | 2000-08-02 | 2007-10-23 | Neomax Co., Ltd. | Anisotropic thin-film rare-earth permanent magnet |
| CN104081475A (en) * | 2012-03-26 | 2014-10-01 | 株式会社日立制作所 | Rare-earth magnet |
| FR3025357A1 (en) * | 2014-09-01 | 2016-03-04 | Vivier Harry J P | PERMANENT MAGNETS STRUCTURES IN STRATES |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59217249A (en) * | 1983-05-25 | 1984-12-07 | Sony Corp | Photomagnetic recording medium |
| JPS59217247A (en) * | 1983-05-25 | 1984-12-07 | Sony Corp | Photomagnetic recording medium and its manufacture |
-
1984
- 1984-10-31 JP JP59229570A patent/JPH063768B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59217249A (en) * | 1983-05-25 | 1984-12-07 | Sony Corp | Photomagnetic recording medium |
| JPS59217247A (en) * | 1983-05-25 | 1984-12-07 | Sony Corp | Photomagnetic recording medium and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61108112A (en) | 1986-05-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH063768B2 (en) | Perpendicular magnetic film | |
| JPH0670858B2 (en) | Magneto-optical recording medium and its manufacturing method | |
| JPS60128605A (en) | Amorphous magnetic alloy multilayer film and magnetic head using the same | |
| US5403457A (en) | Method for making soft magnetic film | |
| Kadokura et al. | Deposition of Co-Cr films for perpendicular magnetic recording by improved opposing targets sputtering | |
| JPS6134723A (en) | Magnetic recording medium and its manufacture | |
| EP0492584B1 (en) | Magneto-optical recording medium | |
| JPS6154059A (en) | Magneto-optical recording film | |
| JPS63269354A (en) | Magneto-optical recording medium | |
| JPS63273236A (en) | Magneto-optical recording medium | |
| JPH05315135A (en) | Co/ni artificial lattice film, magnetoresistance element, magnetic head and magnetic recording medium, and manufacture of co/ni artificial lattice film | |
| JPS63293707A (en) | Multi-layered fe-co magnetic film and magnetic head | |
| JP2707560B2 (en) | Artificial lattice magneto-optical recording medium | |
| JPS60173746A (en) | Photoelectromagnetic recording medium | |
| JP3132254B2 (en) | Soft magnetic film and method for manufacturing soft magnetic multilayer film | |
| JPH0792936B2 (en) | Method for manufacturing magneto-optical recording element | |
| JP2707561B2 (en) | Artificial lattice magneto-optical recording medium | |
| JPH03157838A (en) | Magneto-optical recording device | |
| JPH0660452A (en) | Magneto-optical recording medium | |
| JP3237977B2 (en) | Magneto-optical recording medium | |
| JPH06325419A (en) | Magneto-optical recording medium | |
| JPH03268247A (en) | Magneto-optical recording medium and its production | |
| JPH07107757B2 (en) | Magneto-optical recording medium | |
| JPS6398827A (en) | Perpendicular magnetic recording medium | |
| JPH04245043A (en) | Magneto-optic data board body with platinum-containing read layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |