JPH06333914A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPH06333914A JPH06333914A JP3391894A JP3391894A JPH06333914A JP H06333914 A JPH06333914 A JP H06333914A JP 3391894 A JP3391894 A JP 3391894A JP 3391894 A JP3391894 A JP 3391894A JP H06333914 A JPH06333914 A JP H06333914A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- support
- semiconductor
- quartz boat
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば石英ボートを備
える熱処理用電気炉のように、半導体基板（ウエハ）を
保持したボートを搬送し、加熱処理する半導体製造装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for transporting a boat holding a semiconductor substrate (wafer) and heat treatment, such as an electric furnace for heat treatment provided with a quartz boat.
【０００２】[0002]
【従来の技術】図９は、従来の電気炉の構造を示す模式
図である。図中１は、長手方向を鉛直方向とした支柱１
ａを、水平面で半円弧を描くように４本備える石英ボー
トであり、支柱１ａ，１ａ…には水平な切り込み部が夫
々同じ高さに等間隔で設けられており、４個の切り込み
部に支持される態様にて、半導体基板２，２…を保持す
るようになっている。石英ボート１は底部が保温筒３と
連結されており、保温筒３の底部に連結されたキャップ
兼エレベータ４の上下昇降により、石英ボート１上方に
配設された炉芯管５内に挿入脱される。炉芯管５は石英
製の電気炉であり、高温に保持されて、この内部に挿入
された石英ボート１内の半導体基板２，２…を熱処理す
る。2. Description of the Related Art FIG. 9 is a schematic view showing the structure of a conventional electric furnace. In the figure, 1 is a column 1 whose longitudinal direction is vertical.
a is a quartz boat provided with four so as to draw a semi-circular arc in a horizontal plane, and the pillars 1a, 1a ... Have horizontal cut portions at equal intervals at the same height. The semiconductor substrates 2, 2, ... Are held in a supported manner. The bottom of the quartz boat 1 is connected to the heat insulating cylinder 3, and the cap / elevator 4 connected to the bottom of the heat insulating cylinder 3 is vertically moved up and down so that the quartz boat 1 is inserted and removed into the furnace core tube 5 arranged above the quartz boat 1. To be done. The furnace core tube 5 is an electric furnace made of quartz, and is maintained at a high temperature to heat-treat the semiconductor substrates 2, 2 ... Inside the quartz boat 1 inserted therein.
【０００３】[0003]
【発明が解決しようとする課題】このような電気炉で半
導体基板を熱処理する場合に、半導体基板の中央部と周
縁部とで温度差が生じ、これによる熱応力が半導体基板
に付加される。例えば半導体基板のサイズが大きい場合
又は短時間で半導体基板を加熱した場合のように、大き
な熱応力が付加されたときには、半導体基板を炉芯管へ
挿入する際又は引き出す際に転位が発生して半導体基板
に反りが生じ易い。When a semiconductor substrate is heat-treated in such an electric furnace, a temperature difference is generated between the central portion and the peripheral portion of the semiconductor substrate, and thermal stress is added to the semiconductor substrate. When large thermal stress is applied, such as when the size of the semiconductor substrate is large or when the semiconductor substrate is heated in a short time, dislocation occurs when the semiconductor substrate is inserted into or pulled out from the furnace core tube. The semiconductor substrate is likely to warp.
【０００４】また、上述の石英ボートは４点支持により
半導体基板を保持している。図１０は、このように保持
された半導体基板を上から見た模式図であり、半導体基
板２は支柱１ａ，１ａ…の切り込み部により、周縁の４
点で支持されている。このように、半導体基板の自重は
半導体基板周縁の４点で支持されているので、自重によ
る応力（支持点が与える力）が半導体基板に不均一に付
加される。この応力は半導体基板のサイズが大きい程大
きな力となり、自重による応力と前記熱応力とにより、
半導体基板に転位又はスリップが発生し易くなる。これ
は、近年多用される大口径８インチφ以上の半導体基板
において、特に顕著な問題であった。Further, the above-mentioned quartz boat holds a semiconductor substrate by supporting at four points. FIG. 10 is a schematic view of the semiconductor substrate held in this way as seen from above, and the semiconductor substrate 2 has four edges at the periphery due to the cut portions of the pillars 1a.
Supported by points. As described above, since the weight of the semiconductor substrate is supported by the four points on the periphery of the semiconductor substrate, the stress due to the weight (the force given by the supporting points) is unevenly applied to the semiconductor substrate. This stress increases as the size of the semiconductor substrate increases, and due to the stress due to its own weight and the thermal stress,
Dislocations or slips easily occur on the semiconductor substrate. This is a particularly remarkable problem in a semiconductor substrate having a large diameter of 8 inches φ or more, which has been frequently used in recent years.
【０００５】本発明は、かかる事情に鑑みてなされたも
のであり、半導体基板対向側に突起部を設けた支持体を
備えて半導体基板の自重による応力を分散せしめ、面積
の大きな半導体基板でも、転位又はスリップの発生を防
止して、均一な加熱処理を行うことができる半導体製造
装置を提供することを目的とする。The present invention has been made in view of the above circumstances, and includes a support having a protrusion on the side opposite to the semiconductor substrate to disperse the stress due to its own weight of the semiconductor substrate, so that a semiconductor substrate having a large area can be formed. An object of the present invention is to provide a semiconductor manufacturing apparatus capable of performing uniform heat treatment while preventing the occurrence of dislocations or slips.
【０００６】[0006]
【課題を解決するための手段】第１発明に係る半導体製
造装置は、支柱の側部に設けた切り込み部に半導体基板
を挿入し、該半導体基板を保持する縦型のボートを備
え、前記半導体基板に熱処理を施す半導体製造装置にお
いて、前記ボートは、半導体基板を支持する支持体を支
柱の切り込み部近傍に備え、該支持体の半導体基板対向
側に複数の突起部を設けてあることを特徴とする。A semiconductor manufacturing apparatus according to a first aspect of the present invention comprises a vertical boat for inserting a semiconductor substrate into a notch provided in a side portion of a support and holding the semiconductor substrate. In the semiconductor manufacturing apparatus for heat-treating a substrate, the boat is provided with a support for supporting the semiconductor substrate in the vicinity of a cut portion of a column, and a plurality of protrusions are provided on a side of the support facing the semiconductor substrate. And
【０００７】第２発明に係る半導体製造装置は、第１発
明において、前記支持体は、一部を欠落させて形成した
通気部を前記半導体基板の厚み方向に備えることを特徴
とする。A semiconductor manufacturing apparatus according to a second aspect of the present invention is characterized in that, in the first aspect of the present invention, the supporting member is provided with a ventilation portion formed by omitting a part thereof in the thickness direction of the semiconductor substrate.
【０００８】[0008]
【作用】第１発明の半導体製造装置では、半導体基板対
向側に突起物を設けた支持体上に半導体基板を保持する
ことにより、半導体基板の自重を支える点が分散される
ので、自重による応力が半導体基板に均一に付加され
る。また、前記支持体に設けられた突起部により、半導
体基板が支持体の表面から僅かに離隔し、半導体下面側
へのガスの流通が良好となって、半導体基板の中央部と
周縁部との温度差が小さくなる。In the semiconductor manufacturing apparatus according to the first aspect of the present invention, since the semiconductor substrate is held on the support provided with the protrusions on the side opposite to the semiconductor substrate, the points supporting the weight of the semiconductor substrate are dispersed, so that the stress due to the weight of the semiconductor substrate becomes Are uniformly added to the semiconductor substrate. Further, the protrusion provided on the support body slightly separates the semiconductor substrate from the surface of the support body to improve the flow of gas to the lower surface of the semiconductor, and thus the central portion and the peripheral portion of the semiconductor substrate The temperature difference becomes smaller.
【０００９】第２発明の半導体装置では、ガスが前記支
持体に設けられた通気部を通って半導体下面側へ回り込
むので、更にガスの流通が良好になる。そして、例えば
半導体に成膜を行う場合は、半導体下面側も上面側と同
様に成膜され、半導体基板の表面と裏面との成膜厚が均
一になるので、成膜による半導体基板の応力が均一とな
って反りを防止する。In the semiconductor device according to the second aspect of the invention, the gas circulates to the lower surface side of the semiconductor through the ventilation part provided in the support, so that the gas flow is further improved. When a film is formed on a semiconductor, for example, the lower surface of the semiconductor is formed in the same manner as the upper surface, and the film thickness is uniform on the front surface and the back surface of the semiconductor substrate. Uniformity prevents warpage.
【００１０】[0010]
【実施例】以下、本発明をその実施例を示す図面に基づ
き具体的に説明する。図１は、本発明に係る第１実施例
の石英ボートの構造を示す拡大正面図であり、図２は保
持された半導体基板を上から見た模式図である。石英ボ
ート１には、長手方向を鉛直方向とし、水平面で半円弧
を描くように４本の支柱１ａ，１ａ…が配されており、
支柱１ａ，１ａ…夫々には、同じ高さに切り込み部１
ｂ，１ｂ…が等間隔で設けられている。そして、４本の
支柱１ａ，１ａ…を備えた側即ち背面側に向かって右側
の２本の支柱１ａ，１ａには、保持すべき半導体基板２
の周縁より僅かに小さい円弧を有する、例えば石英製の
半円板状の支持体６が、切り込み部１ｂ，１ｂ…の底面
と同一平面をなすように周着されている。また、左側の
２本の支柱１ａ，１ａには同様の半円板状の支持体６
が、中央部を含む正背方向を空間にして同様に周着され
ている。そして、支持体６夫々の上面には、滑らかな突
起部７，７…が３個づつ均一に位置させて設けられてい
る。そして、大口径、例えば８インチφの半導体基板２
が支持部６上に載置され、突起部７，７…により支持さ
れる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings showing the embodiments. FIG. 1 is an enlarged front view showing the structure of the quartz boat of the first embodiment according to the present invention, and FIG. 2 is a schematic view of the held semiconductor substrate as seen from above. The quartz boat 1 has four columns 1a, 1a ... Arranged so that the longitudinal direction is the vertical direction and a semi-circular arc is drawn on the horizontal plane.
Posts 1a, 1a ... Each has a notch 1 at the same height.
b, 1b ... Are provided at equal intervals. The semiconductor substrate 2 to be held is attached to the two columns 1a, 1a on the right side of the side provided with the four columns 1a, 1a.
A semicircular plate-shaped support body 6 made of, for example, quartz, having an arc slightly smaller than the peripheral edge of, is circumferentially attached so as to be flush with the bottom surface of the cut portions 1b, 1b. In addition, a similar semi-circular support 6 is attached to the two left columns 1a, 1a.
However, it is similarly wrapped around the front part including the central part as a space. .. are provided uniformly on the upper surface of each of the supports 6 in threes. Then, the semiconductor substrate 2 having a large diameter, for example, 8 inches φ
Are placed on the supporting portion 6 and are supported by the protruding portions 7, 7.
【００１１】石英ボート１には、このような支持体６，
６が、鉛直方向に複数設けられた切り込み部１ｂ，１ｂ
…に対応させて複数備えてある。半導体基板２，２…を
載置するときには、図示しないセラミック製のアームに
より半導体基板２の裏面中央を支持し、切り込み部１
ｂ，１ｂ…及び支持体６，６…夫々に半導体基板２，２
…を移送する。このとき半導体基板２は突起部７，７…
に支持され、支持体６表面から僅かに離隔している。こ
の石英ボート１を用いて半導体基板２，２，…に、例え
ば熱酸化処理，ＣＶＤ工程，熱拡散処理又はアニール工
程等の加熱処理を行う場合には、石英ボート１を図示し
ない炉芯管に挿入し、半導体基板２，２…を加熱処理す
る。The quartz boat 1 has such a support 6,
6 is a plurality of cut portions 1b, 1b provided in the vertical direction.
There are several corresponding to ... When mounting the semiconductor substrates 2, 2, ..., The center of the back surface of the semiconductor substrate 2 is supported by an unillustrated ceramic arm, and the cut portion 1
b, 1b ... And the support bodies 6, 6 ...
Transfer ... At this time, the semiconductor substrate 2 has protrusions 7, 7 ...
And is slightly separated from the surface of the support 6. When the semiconductor boats 2, 2, ... Are subjected to heat treatment such as thermal oxidation treatment, CVD process, thermal diffusion treatment or annealing process using the quartz boat 1, the quartz boat 1 is used as a furnace core tube (not shown). The semiconductor substrates 2, 2 ... Are inserted and heat-treated.
【００１２】このような石英ボート１に保持された半導
体基板２は、支持体６，６上に設けられた突起部７，７
…により支持されるので、自重による応力が均一に付加
され、加熱時の転位及びスリップの発生を防止できる。
また、突起部７，７…により支持体６，６表面から離隔
されるので、半導体基板下面へのガスの流通が良好とな
って、半導体基板の中央部と周縁部との温度差が小さく
なる。The semiconductor substrate 2 held by such a quartz boat 1 has the protrusions 7, 7 provided on the supports 6, 6.
Since it is supported by, the stress due to its own weight is uniformly applied, and it is possible to prevent the occurrence of dislocation and slip during heating.
Further, since the protrusions 7, 7 are separated from the surfaces of the supports 6 and 6, the gas flow to the lower surface of the semiconductor substrate is good, and the temperature difference between the central portion and the peripheral portion of the semiconductor substrate is small. .
【００１３】なお、本実施例では支持体として、対をな
す半円板状のものを備えているが、これに限るものでは
なく、炉芯管内のガスの流れを妨げない形状のものであ
れば、例えば半導体基板の周縁のみを支える円弧状のも
のであっても良い。In this embodiment, a pair of semi-circular plates are provided as the support, but the support is not limited to this and may be of any shape that does not hinder the gas flow in the furnace core tube. For example, it may have an arc shape that supports only the peripheral edge of the semiconductor substrate.
【００１４】次に、本発明に係る石英ボートの第２実施
例をその図面に基づいて説明する。図３は、石英ボート
内に保持された半導体基板を上から見た模式図であり、
図４は石英ボートが備える支柱及び支持体の構造を示し
た斜視図である。図３，図４において、１ａ，１ａ…は
上述の実施例（図１参照）と同様に配された４本の支柱
であり、１６は例えば石英で形成された支持体である。
この支持体１６は外形が半円板形状であり、保持すべき
半導体基板２の周縁より僅かに小さい円弧を有してい
る。そして、支持体１６は半導体基板２の厚み方向即ち
鉛直方向に貫通する複数の前記通気部である開口部１
８，１８，…を有しており、上から見て網目形状をなし
ている。支持体１６の厚みは、後述のように支持される
半導体基板２の重量に耐え得る程度に厚く、石英ボート
内のガスの流れを妨げない程度に薄いことが望ましい。Next, a second embodiment of the quartz boat according to the present invention will be described with reference to the drawings. FIG. 3 is a schematic view of a semiconductor substrate held in a quartz boat as seen from above,
FIG. 4 is a perspective view showing a structure of a support and a support provided in the quartz boat. 3 and 4, reference numerals 1a, 1a ... Denote four columns arranged in the same manner as in the above-described embodiment (see FIG. 1), and 16 is a support made of, for example, quartz.
The support 16 has a semi-circular outer shape, and has an arc slightly smaller than the peripheral edge of the semiconductor substrate 2 to be held. The support 16 is provided with the openings 1 that are the plurality of ventilation portions that penetrate the semiconductor substrate 2 in the thickness direction, that is, the vertical direction.
, 18, ... And have a mesh shape when viewed from above. The thickness of the support 16 is preferably thick enough to withstand the weight of the semiconductor substrate 2 to be supported as described later, and thin enough not to hinder the gas flow in the quartz boat.
【００１５】そして支持体１６は、その円弧の部分が、
石英ボートの正面に向かって左側の２本の支柱１ａ，１
ａの側面に前記切り込み部の底面と同一平面をなすよう
に周着されている。また、図４では省略されているが、
右側の２本の支柱１ａ，１ａにも同様の支持体１６が周
着されており、石英ボートの中央部を含む正背方向を空
間にしている。そして、支持体１６夫々の上面には、滑
らかな突起部７，７…が３個づつ均一に位置させて設け
られている。そして、大口径、例えば８インチφの半導
体基板２が支持部１６上に載置され、突起部７，７…に
より支持されるようになっている。The support 16 has a circular arc portion,
Two columns 1a, 1 on the left side facing the front of the quartz boat
It is attached to the side surface of a so as to be flush with the bottom surface of the cut portion. Although omitted in FIG. 4,
A similar support 16 is also attached to the two right columns 1a, 1a so that the front and back direction including the central portion of the quartz boat is a space. .. are provided uniformly on the upper surface of each of the supports 16 in threes. Then, the semiconductor substrate 2 having a large diameter, for example, 8 inches φ is placed on the supporting portion 16 and is supported by the protruding portions 7, 7.
【００１６】石英ボートには、このような支持体１６，
１６，…が、縦方向即ち鉛直方向に複数設けられた切り
込み部１ｂ，１ｂ…に対応させて複数備えてある。以上
のように、支持体１６の形状が異なる他は上述の実施例
と同様であり、その説明を省略する。In the quartz boat, such a support member 16,
16 are provided corresponding to the plurality of cut portions 1b provided in the vertical direction, that is, the vertical direction. As described above, except that the shape of the support 16 is different, it is the same as the above-described embodiment, and the description thereof is omitted.
【００１７】以上の如き石英ボートに半導体基板２，２
…を載置し、例えば熱酸化処理又はＣＶＤ等の成膜処理
を施すときには、まず、図示しないセラミック製のアー
ムにより半導体基板２の裏面中央を支持し、切り込み部
内及び支持体１６，１６…上に半導体基板２，２…を移
送する。このとき半導体基板２は突起部７，７…に支持
され、支持体１６表面から僅かに離隔している。この石
英ボートを図示しない炉芯管に挿入し、半導体基板２，
２…に成膜する。In the quartz boat as described above, semiconductor substrates 2 and 2 are attached.
.. is placed and, for example, when thermal oxidation treatment or film formation processing such as CVD is performed, first, the center of the back surface of the semiconductor substrate 2 is supported by an unillustrated ceramic arm, and the inside of the cut portion and the supports 16, 16 ... The semiconductor substrates 2, 2, ... Are transferred to. At this time, the semiconductor substrate 2 is supported by the protrusions 7, 7 ... And is slightly separated from the surface of the support 16. The quartz boat is inserted into a furnace core tube (not shown), and the semiconductor substrate 2,
2 is formed into a film.
【００１８】このとき石英ボート内のガスは、支持体１
６，１６，…に設けられた開口部１８，１８，…を通っ
て半導体基板２の裏面にも表面と同様に成膜する。これ
により、半導体基板の表面と裏面との膜厚が均一にな
り、半導体基板の応力が均一となって、応力の不均一か
ら生じる反りを防止できる。また、半円板状の支持体を
備える第１実施例の石英ボートよりも、さらにガスの流
通が良好になり、半導体基板の中央部と周縁部との温度
差をさらに小さくできる。At this time, the gas in the quartz boat is the support 1
Like the front surface, a film is formed on the back surface of the semiconductor substrate 2 through the openings 18, 18 ,. As a result, the thickness of the front surface and the back surface of the semiconductor substrate becomes uniform, the stress of the semiconductor substrate becomes uniform, and the warpage caused by the uneven stress can be prevented. Further, the gas flow is further improved as compared with the quartz boat of the first embodiment provided with the semi-circular support, and the temperature difference between the central portion and the peripheral portion of the semiconductor substrate can be further reduced.
【００１９】図５は他の実施例の石英ボート内に保持さ
れた半導体基板を上から見た模式図であり、図６はその
石英ボートが備える支柱及び支持体の構造を示した斜視
図である。また、図７は他の実施例の石英ボート内に保
持された半導体基板を上から見た模式図であり、図８は
その石英ボートが備える支柱及び支持体の構造を示した
斜視図である。図において２６，３６は夫々支持体であ
り、支持体２６，３６の以下に説明する形状以外は上述
の実施例と同様の構造であり、対応する部分に対応する
符号を付してその説明を省略する。FIG. 5 is a schematic view of a semiconductor substrate held in a quartz boat according to another embodiment as seen from above, and FIG. 6 is a perspective view showing the structure of columns and supports provided in the quartz boat. is there. Further, FIG. 7 is a schematic view of a semiconductor substrate held in a quartz boat according to another embodiment as seen from above, and FIG. 8 is a perspective view showing the structure of columns and supports provided in the quartz boat. . In the figure, reference numerals 26 and 36 denote supports, respectively, which have the same structure as that of the above-described embodiment except for the shapes of the supports 26 and 36 which will be described below. Omit it.
【００２０】図５，図６において、支持体２６は外形が
半円形状をなしており、半導体基板２の厚み方向に貫通
する複数の開口部２８，２８，…を設けている。この支
持体２６は、開口部２８，２８，…の面積が上述の第２
実施例より大きいこと以外は、第２実施例で示した支持
体と同構造である。この支持体２６を備えることによ
り、ガスの流通がさらに良好になる。なお、図６は石英
ボートの左側の一部分だけを示したものであり、右側に
も同様の支持体を備えている。5 and 6, the support 26 has a semicircular outer shape, and is provided with a plurality of openings 28, 28, ... Which penetrate the semiconductor substrate 2 in the thickness direction. The area of the openings 28, 28, ...
The structure is the same as the support shown in the second embodiment except that it is larger than the embodiment. By providing this support 26, the flow of gas is further improved. Note that FIG. 6 shows only a part on the left side of the quartz boat, and a similar support is also provided on the right side.
【００２１】また、図７，図８において、支持体３６
は、支柱１ａ，１ａ，…に周着される側が円弧形状であ
り、石英ボート中央側には半導体基板の厚み方向に貫通
する前記通気部である切欠部３８，３８，…を有してお
り、上から見て櫛形状をなしている。支持体３６の形状
以外は第２実施例で示した支持体と同様であり、支持体
３６を備えることにより、ガスの流通がさらに良好にな
る。なお、図８は石英ボートの左側の一部分だけを示し
たものであり、右側にも同様の支持体を備えている。7 and 8, the support 36
Has an arc shape on the side that is circumscribed around the columns 1a, 1a, ... And has notches 38, 38, ... As the ventilation part that penetrates in the thickness direction of the semiconductor substrate on the center side of the quartz boat. , It looks like a comb when viewed from above. Except for the shape of the support 36, it is the same as the support shown in the second embodiment, and by providing the support 36, the gas flow is further improved. Note that FIG. 8 shows only a part of the left side of the quartz boat, and the right side is also provided with a similar support.
【００２２】なお、上述の実施例では支持体及び突起部
に石英製のものを用いているが、これは石英ボート内が
800℃以上の高温になっても変形せず、炉芯管内の洗浄
度を低下させないためであり、ＳｉＣを用いても良い。In the above-mentioned embodiment, the support and the protrusions are made of quartz.
This is because even if the temperature rises to 800 ° C. or higher, it does not deform and the cleaning degree in the furnace core tube is not lowered, and SiC may be used.
【００２３】また、本実施例では、支持体に突起部７を
３個備えた場合を説明しているが、これに限るものでは
なく、複数の突起部７を備えてあれば良い。In this embodiment, the case where the support member is provided with three protrusions 7 is described, but the present invention is not limited to this, and a plurality of protrusions 7 may be provided.
【００２４】さらに突起部７は、半導体基板２の自重に
よる応力が均一になるように支持できる位置であれば、
どのような位置に設けても良い。Further, if the protrusion 7 is at a position where it can be supported so that the stress due to its own weight of the semiconductor substrate 2 becomes uniform,
It may be provided at any position.
【００２５】さらに、本実施例では、水平に支持した半
導体基板２を鉛直方向に複数保持するタイプのボート１
の場合について説明しているが、これに限るものではな
く、水平面上に複数保持するタイプのボートであっても
良い。Further, in this embodiment, a boat 1 of the type that holds a plurality of horizontally supported semiconductor substrates 2 in the vertical direction.
Although the case has been described, the present invention is not limited to this and may be a boat of a type that holds a plurality of boats on a horizontal plane.
【００２６】[0026]
【発明の効果】以上のように、本発明においては、支持
体上に半導体基板を保持するので、半導体基板の自重に
よる応力が分散され、面積の大きな半導体基板でも、転
位又はスリップの発生を防止することができる。さら
に、支持体の半導体基板保持側に突起部を設けてあるの
で、半導体基板の下面にもガスが流通し、半導体基板の
中央部と周縁部との温度差が小さくなる。また、前記支
持体に通気部を設けてあるので、ガスの半導体基板の裏
面への流通が良好になり、半導体基板の表面と裏面との
成膜厚が均一になって反りを防止する等、本発明は優れ
た効果を奏するものである。As described above, in the present invention, since the semiconductor substrate is held on the support, the stress due to the weight of the semiconductor substrate is dispersed, and dislocations or slips are prevented even in a semiconductor substrate having a large area. can do. Further, since the protrusion is provided on the semiconductor substrate holding side of the support, the gas also flows through the lower surface of the semiconductor substrate, and the temperature difference between the central portion and the peripheral portion of the semiconductor substrate becomes small. Further, since the support is provided with a ventilation part, the flow of gas to the back surface of the semiconductor substrate is improved, and the film thickness of the front surface and the back surface of the semiconductor substrate is made uniform to prevent warping, etc. The present invention has excellent effects.
【図１】本発明に係る石英ボートの構造を示す模式的正
面図である。FIG. 1 is a schematic front view showing the structure of a quartz boat according to the present invention.
【図２】本発明に係る石英ボートに保持された半導体基
板を上から見た模式図である。FIG. 2 is a schematic view of a semiconductor substrate held by a quartz boat according to the present invention as seen from above.
【図３】本発明に係る石英ボートに保持された半導体基
板を上から見た模式図である。FIG. 3 is a schematic view of a semiconductor substrate held by a quartz boat according to the present invention as seen from above.
【図４】本発明に係る支持体の斜視図である。FIG. 4 is a perspective view of a support according to the present invention.
【図５】本発明に係る石英ボートに保持された半導体基
板を上から見た模式図である。FIG. 5 is a schematic view of a semiconductor substrate held by a quartz boat according to the present invention as seen from above.
【図６】本発明に係る支持体の斜視図である。FIG. 6 is a perspective view of a support according to the present invention.
【図７】本発明に係る石英ボートに保持された半導体基
板を上から見た模式図である。FIG. 7 is a schematic view of a semiconductor substrate held by a quartz boat according to the present invention as seen from above.
【図８】本発明に係る支持体の斜視図である。FIG. 8 is a perspective view of a support according to the present invention.
【図９】従来の電気炉の構造を示す模式図である。FIG. 9 is a schematic view showing the structure of a conventional electric furnace.
【図１０】従来の石英ボートに保持された半導体基板を
上から見た模式図である。FIG. 10 is a schematic view of a semiconductor substrate held by a conventional quartz boat as seen from above.
１ 石英ボート １ａ 支柱 １ｂ 切り込み部 ２ 半導体基板 ５ 炉芯管 ６，１６，２６ 支持体 ７ 突起部 １８ 開口部 ２８ 切欠部 DESCRIPTION OF SYMBOLS 1 Quartz boat 1a Support 1b Notch 2 Semiconductor substrate 5 Furnace core tube 6,16,26 Support 7 Projection 18 Opening 28 Notch
Claims (2)
基板を挿入し、該半導体基板を保持する縦型のボートを
備え、前記半導体基板に熱処理を施す半導体製造装置に
おいて、 前記ボートは、半導体基板を支持する支持体を支柱の切
り込み部近傍に備え、該支持体の半導体基板対向側に複
数の突起部を設けてあることを特徴とする半導体製造装
置。1. A semiconductor manufacturing apparatus, comprising a vertical boat for inserting a semiconductor substrate into a notch provided on a side portion of a column and holding the semiconductor substrate, wherein the semiconductor substrate is heat-treated. A semiconductor manufacturing apparatus, comprising: a support for supporting a semiconductor substrate in the vicinity of a notch of a support; and a plurality of protrusions provided on the side of the support facing the semiconductor substrate.
た通気部を前記半導体基板の厚み方向に備える請求項１
記載の半導体製造装置。2. The support body is provided with a ventilation portion formed by omitting a part thereof in the thickness direction of the semiconductor substrate.
The semiconductor manufacturing apparatus described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6033918A JP3067509B2 (en) | 1993-03-24 | 1994-03-03 | Semiconductor manufacturing equipment |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5-13793 | 1993-03-24 | ||
| JP1379393 | 1993-03-24 | ||
| JP6033918A JP3067509B2 (en) | 1993-03-24 | 1994-03-03 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06333914A true JPH06333914A (en) | 1994-12-02 |
| JP3067509B2 JP3067509B2 (en) | 2000-07-17 |
Family
ID=26349636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6033918A Expired - Lifetime JP3067509B2 (en) | 1993-03-24 | 1994-03-03 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3067509B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002033743A1 (en) * | 2000-10-16 | 2002-04-25 | Nippon Steel Corporation | Wafer holder, wafer support member, wafer holding device, and heat treating furnace |
| JP2002246449A (en) * | 2001-02-19 | 2002-08-30 | Nippon Steel Corp | Wafer support member, wafer-holding tool and wafer- holding device |
| US7204887B2 (en) | 2000-10-16 | 2007-04-17 | Nippon Steel Corporation | Wafer holding, wafer support member, wafer boat and heat treatment furnace |
-
1994
- 1994-03-03 JP JP6033918A patent/JP3067509B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002033743A1 (en) * | 2000-10-16 | 2002-04-25 | Nippon Steel Corporation | Wafer holder, wafer support member, wafer holding device, and heat treating furnace |
| US7204887B2 (en) | 2000-10-16 | 2007-04-17 | Nippon Steel Corporation | Wafer holding, wafer support member, wafer boat and heat treatment furnace |
| JP2002246449A (en) * | 2001-02-19 | 2002-08-30 | Nippon Steel Corp | Wafer support member, wafer-holding tool and wafer- holding device |
| JP4589545B2 (en) * | 2001-02-19 | 2010-12-01 | 新日本製鐵株式会社 | Wafer support member, wafer holder and wafer holding device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3067509B2 (en) | 2000-07-17 |
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